JP2020010020A5 - - Google Patents
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- JP2020010020A5 JP2020010020A5 JP2019099046A JP2019099046A JP2020010020A5 JP 2020010020 A5 JP2020010020 A5 JP 2020010020A5 JP 2019099046 A JP2019099046 A JP 2019099046A JP 2019099046 A JP2019099046 A JP 2019099046A JP 2020010020 A5 JP2020010020 A5 JP 2020010020A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- carbide wafer
- wafer
- layer
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 64
- 229910010271 silicon carbide Inorganic materials 0.000 claims 58
- 235000012431 wafers Nutrition 0.000 claims 52
- 239000010410 layer Substances 0.000 claims 36
- 238000000034 method Methods 0.000 claims 34
- 238000002347 injection Methods 0.000 claims 24
- 239000007924 injection Substances 0.000 claims 24
- 238000010521 absorption reaction Methods 0.000 claims 22
- 150000002500 ions Chemical class 0.000 claims 19
- -1 nitrogen ion Chemical class 0.000 claims 8
- 239000013078 crystal Substances 0.000 claims 6
- 229910021426 porous silicon Inorganic materials 0.000 claims 6
- 239000002344 surface layer Substances 0.000 claims 6
- 239000000463 material Substances 0.000 claims 5
- 230000007547 defect Effects 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 1
- LCKIEQZJEYYRIY-UHFFFAOYSA-N Titanium ion Chemical compound [Ti+4] LCKIEQZJEYYRIY-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000005280 amorphization Methods 0.000 claims 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910001453 nickel ion Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000001556 precipitation Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000000527 sonication Methods 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910001456 vanadium ion Inorganic materials 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102018112729.4 | 2018-05-28 | ||
| DE102018112729 | 2018-05-28 | ||
| DE102019111377.6A DE102019111377B4 (de) | 2018-05-28 | 2019-05-02 | Verfahren zum Verarbeiten eines Siliziumkarbid-Wafers |
| DE102019111377.6 | 2019-05-02 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020010020A JP2020010020A (ja) | 2020-01-16 |
| JP2020010020A5 true JP2020010020A5 (enExample) | 2022-06-06 |
| JP7229852B2 JP7229852B2 (ja) | 2023-02-28 |
Family
ID=68499521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019099046A Active JP7229852B2 (ja) | 2018-05-28 | 2019-05-28 | 炭化ケイ素ウェハを処理するための方法および炭化ケイ素半導体デバイス |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10903078B2 (enExample) |
| JP (1) | JP7229852B2 (enExample) |
| DE (1) | DE102019111377B4 (enExample) |
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| US10665459B2 (en) * | 2016-10-13 | 2020-05-26 | Mitsubishi Electric Corporation | Method for manufacturing semiconductor device |
| JP7155759B2 (ja) * | 2018-08-27 | 2022-10-19 | 富士電機株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP7330771B2 (ja) * | 2019-06-14 | 2023-08-22 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
| US11081393B2 (en) | 2019-12-09 | 2021-08-03 | Infineon Technologies Ag | Method for splitting semiconductor wafers |
| WO2021149151A1 (ja) * | 2020-01-21 | 2021-07-29 | 三菱電機株式会社 | 半導体ウエハおよび半導体装置の製造方法 |
| CN113981528B (zh) * | 2020-07-27 | 2024-06-21 | 环球晶圆股份有限公司 | 碳化硅晶片的制造方法以及半导体结构 |
| DE102020119953A1 (de) | 2020-07-29 | 2022-02-03 | Infineon Technologies Ag | Verfahren zum Bilden eines Halbleiterbauelements |
| DE102020210934A1 (de) | 2020-08-31 | 2022-03-03 | Robert Bosch Gesellschaft mit beschränkter Haftung | Leistungshalbleiteranordnung |
| DE102020215007A1 (de) | 2020-11-30 | 2022-06-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines vertikalen Leistungshalbleiterbauelements |
| US11848197B2 (en) | 2020-11-30 | 2023-12-19 | Thinsic Inc. | Integrated method for low-cost wide band gap semiconductor device manufacturing |
| US11626371B2 (en) * | 2020-12-28 | 2023-04-11 | Infineon Technologies Ag | Semiconductor structure with one or more support structures |
| CN113178383A (zh) * | 2021-03-10 | 2021-07-27 | 华为技术有限公司 | 一种碳化硅基板、碳化硅器件及其基板减薄方法 |
| US20240266165A1 (en) * | 2021-06-07 | 2024-08-08 | The Regents Of The University Of California | Iii-v, ii-vi in-situ compliant substrate formation |
| DE102021118315A1 (de) * | 2021-07-15 | 2023-01-19 | mi2-factory GmbH | Verfahren zur Herstellung eines elektronischen Halbleiterbauelements |
| DE102021124636A1 (de) | 2021-09-23 | 2023-03-23 | Infineon Technologies Ag | Verfahren zum ausbilden einer eine absorptionsschicht enthaltenden halbleitervorrichtung |
| JP7716305B2 (ja) * | 2021-10-11 | 2025-07-31 | 株式会社デンソー | 半導体装置の製造方法 |
| CN114823303A (zh) * | 2022-04-27 | 2022-07-29 | 无锡先为科技有限公司 | 半导体器件及其制备方法 |
| US12322657B2 (en) | 2022-07-03 | 2025-06-03 | Thinsic Inc. | Wide band gap semiconductor process, device, and method |
| US12400914B2 (en) | 2022-07-03 | 2025-08-26 | Thinsic Inc. | Semiconductor exfoliation method |
| CN115831716A (zh) * | 2022-12-27 | 2023-03-21 | 广东芯粤能半导体有限公司 | 碳化硅衬底的回收方法及回收系统 |
| WO2025062658A1 (ja) * | 2023-09-22 | 2025-03-27 | 日本碍子株式会社 | 半導体ウエハ、半導体ウエハ製造方法 |
| US12382707B1 (en) * | 2024-02-01 | 2025-08-05 | Southeast University | Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof |
| DE102024202906A1 (de) | 2024-03-27 | 2025-10-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer SiC-Epitaxieschicht auf einer ersten monokristallinen SiC-Schicht und Vorrichtung mit einer SiC-Epitaxieschicht auf einer ersten monokristallinen SiC-Schicht |
| US12434330B1 (en) | 2024-04-05 | 2025-10-07 | Wolfspeed, Inc. | Laser-based surface processing for semiconductor workpiece |
| US12269123B1 (en) | 2024-04-05 | 2025-04-08 | Wolfspeed, Inc. | Laser edge shaping for semiconductor wafers |
| US12438001B1 (en) * | 2024-04-05 | 2025-10-07 | Wolfspeed, Inc. | Off axis laser-based surface processing operations for semiconductor wafers |
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| US6579359B1 (en) * | 1999-06-02 | 2003-06-17 | Technologies And Devices International, Inc. | Method of crystal growth and resulted structures |
| JP3975634B2 (ja) * | 2000-01-25 | 2007-09-12 | 信越半導体株式会社 | 半導体ウェハの製作法 |
| JP3655547B2 (ja) | 2000-05-10 | 2005-06-02 | 株式会社イオン工学研究所 | 半導体薄膜の形成方法 |
| JP2003095798A (ja) * | 2001-09-27 | 2003-04-03 | Hoya Corp | 単結晶基板の製造方法 |
| WO2008136126A1 (ja) * | 2007-04-20 | 2008-11-13 | Canon Anelva Corporation | 炭化ケイ素基板を有する半導体デバイスのアニール方法と半導体デバイス |
| US8207590B2 (en) * | 2008-07-03 | 2012-06-26 | Samsung Electronics Co., Ltd. | Image sensor, substrate for the same, image sensing device including the image sensor, and associated methods |
| JP2010258083A (ja) * | 2009-04-22 | 2010-11-11 | Panasonic Corp | Ｓｏｉウェーハ、その製造方法および半導体装置の製造方法 |
| KR20130006442A (ko) * | 2010-03-23 | 2013-01-16 | 스미토모덴키고교가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
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| JP6265130B2 (ja) * | 2012-11-22 | 2018-01-24 | 信越化学工業株式会社 | 複合基板の製造方法 |
| JP6068175B2 (ja) * | 2013-02-12 | 2017-01-25 | 新光電気工業株式会社 | 配線基板、発光装置、配線基板の製造方法及び発光装置の製造方法 |
| US9875935B2 (en) * | 2013-03-08 | 2018-01-23 | Infineon Technologies Austria Ag | Semiconductor device and method for producing the same |
| US11721547B2 (en) * | 2013-03-14 | 2023-08-08 | Infineon Technologies Ag | Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device |
| US9768259B2 (en) * | 2013-07-26 | 2017-09-19 | Cree, Inc. | Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling |
| US9761493B2 (en) * | 2014-01-24 | 2017-09-12 | Rutgers, The State University Of New Jersey | Thin epitaxial silicon carbide wafer fabrication |
| US10304739B2 (en) * | 2015-01-16 | 2019-05-28 | Sumitomo Electric Industries, Ltd. | Method for manufacturing semiconductor substrate, semiconductor substrate, method for manufacturing combined semiconductor substrate, combined semiconductor substrate, and semiconductor-joined substrate |
| US9881832B2 (en) * | 2015-03-17 | 2018-01-30 | Sunedison Semiconductor Limited (Uen201334164H) | Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereof |
| DE102015112649B4 (de) * | 2015-07-31 | 2021-02-04 | Infineon Technologies Ag | Verfahren zum bilden eines halbleiterbauelements und halbleiterbauelement |
| JP6572694B2 (ja) * | 2015-09-11 | 2019-09-11 | 信越化学工業株式会社 | ＳｉＣ複合基板の製造方法及び半導体基板の製造方法 |
| WO2017142849A1 (en) * | 2016-02-19 | 2017-08-24 | Sunedison Semiconductor Limited | Semiconductor on insulator structure comprising a buried high resistivity layer |
| DE102016105610B4 (de) * | 2016-03-24 | 2020-10-08 | Infineon Technologies Ag | Halbleiterbauelement mit einer Graphenschicht und ein Verfahren zu dessen Herstellung |
| KR102109292B1 (ko) * | 2016-04-05 | 2020-05-11 | 가부시키가이샤 사이콕스 | 다결정 ＳｉＣ 기판 및 그 제조방법 |
| DE102017127169B4 (de) * | 2017-11-17 | 2022-01-27 | Infineon Technologies Ag | Verfahren zur herstellung eines halbleiterbauelements |
| DE102019106124A1 (de) * | 2018-03-22 | 2019-09-26 | Infineon Technologies Ag | Bilden von Halbleitervorrichtungen in Siliciumcarbid |
| DE102019110402A1 (de) * | 2018-05-25 | 2019-11-28 | Infineon Technologies Ag | Ein Verfahren zum Bearbeiten eines Halbleiterwafers, eine Halbleiter-Verbundstruktur und eine Stützstruktur für einen Halbleiterwafer |
| DE102018116051A1 (de) * | 2018-07-03 | 2020-01-09 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zum herstellen einer halbleitervorrichtung |
| DE102019119289B4 (de) * | 2018-08-24 | 2023-11-30 | Infineon Technologies Ag | Träger, laminat und verfahren zum herstellen von halbleitervorrichtungen |
| DE102018132447B4 (de) * | 2018-12-17 | 2022-10-13 | Infineon Technologies Ag | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
-
2019
- 2019-05-02 DE DE102019111377.6A patent/DE102019111377B4/de active Active
- 2019-05-24 US US16/422,659 patent/US10903078B2/en active Active
- 2019-05-28 JP JP2019099046A patent/JP7229852B2/ja active Active
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