JP2019531596A5 - - Google Patents

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JP2019531596A5
JP2019531596A5 JP2019510435A JP2019510435A JP2019531596A5 JP 2019531596 A5 JP2019531596 A5 JP 2019531596A5 JP 2019510435 A JP2019510435 A JP 2019510435A JP 2019510435 A JP2019510435 A JP 2019510435A JP 2019531596 A5 JP2019531596 A5 JP 2019531596A5
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Japan
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spin
conductive material
current
hole conductive
bit cells
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JP2019510435A
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JP2019531596A (ja
JP6727410B2 (ja
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Priority claimed from US15/247,791 external-priority patent/US10381060B2/en
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JP2019510435A 2016-08-25 2017-07-25 高速低電力スピン軌道トルク（ｓｏｔ）支援スピントランスファートルク磁気ランダムアクセスメモリ（ｓｔｔ−ｍｒａｍ）ビットセルアレイ Expired - Fee Related JP6727410B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/247,791 2016-08-25
US15/247,791 US10381060B2 (en) 2016-08-25 2016-08-25 High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
PCT/US2017/043691 WO2018038849A1 (en) 2016-08-25 2017-07-25 High speed, low power spin-orbit torque (sot) assisted spin-transfer torque magnetic random access memory (stt-mram) bit cell array

Publications (3)

Publication Number Publication Date
JP2019531596A JP2019531596A (ja) 2019-10-31
JP2019531596A5 true JP2019531596A5 (https=) 2019-12-19
JP6727410B2 JP6727410B2 (ja) 2020-07-22

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JP2019510435A Expired - Fee Related JP6727410B2 (ja) 2016-08-25 2017-07-25 高速低電力スピン軌道トルク（ｓｏｔ）支援スピントランスファートルク磁気ランダムアクセスメモリ（ｓｔｔ−ｍｒａｍ）ビットセルアレイ

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US (1) US10381060B2 (https=)
EP (1) EP3504711B1 (https=)
JP (1) JP6727410B2 (https=)
KR (1) KR20190040489A (https=)
CN (1) CN109643567A (https=)
BR (1) BR112019003392A2 (https=)
WO (1) WO2018038849A1 (https=)

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