BR112019003392A2 - arranjo de célula de bits de memória de acesso aleatório magnética por transferência de torque de spin (stt-mram) assistida por torque de spin-órbita (sot) de baixa energia, alta velocidade - Google Patents

arranjo de célula de bits de memória de acesso aleatório magnética por transferência de torque de spin (stt-mram) assistida por torque de spin-órbita (sot) de baixa energia, alta velocidade

Info

Publication number
BR112019003392A2
BR112019003392A2 BR112019003392-0A BR112019003392A BR112019003392A2 BR 112019003392 A2 BR112019003392 A2 BR 112019003392A2 BR 112019003392 A BR112019003392 A BR 112019003392A BR 112019003392 A2 BR112019003392 A2 BR 112019003392A2
Authority
BR
Brazil
Prior art keywords
spin
layer
pmtj
torque
current
Prior art date
Application number
BR112019003392-0A
Other languages
English (en)
Portuguese (pt)
Inventor
Jianan Kan Jimmy
Park Chando
Wang Peiyuan
Kim Sungryul
Hyuk Kang Seung
Original Assignee
Qualcomm Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Incorporated filed Critical Qualcomm Incorporated
Publication of BR112019003392A2 publication Critical patent/BR112019003392A2/pt

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
BR112019003392-0A 2016-08-25 2017-07-25 arranjo de célula de bits de memória de acesso aleatório magnética por transferência de torque de spin (stt-mram) assistida por torque de spin-órbita (sot) de baixa energia, alta velocidade BR112019003392A2 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/247,791 2016-08-25
US15/247,791 US10381060B2 (en) 2016-08-25 2016-08-25 High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
PCT/US2017/043691 WO2018038849A1 (en) 2016-08-25 2017-07-25 High speed, low power spin-orbit torque (sot) assisted spin-transfer torque magnetic random access memory (stt-mram) bit cell array

Publications (1)

Publication Number Publication Date
BR112019003392A2 true BR112019003392A2 (pt) 2019-05-21

Family

ID=59501640

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112019003392-0A BR112019003392A2 (pt) 2016-08-25 2017-07-25 arranjo de célula de bits de memória de acesso aleatório magnética por transferência de torque de spin (stt-mram) assistida por torque de spin-órbita (sot) de baixa energia, alta velocidade

Country Status (7)

Country Link
US (1) US10381060B2 (https=)
EP (1) EP3504711B1 (https=)
JP (1) JP6727410B2 (https=)
KR (1) KR20190040489A (https=)
CN (1) CN109643567A (https=)
BR (1) BR112019003392A2 (https=)
WO (1) WO2018038849A1 (https=)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017090736A1 (ja) 2015-11-27 2017-06-01 Tdk株式会社 スピン流磁化反転型磁気抵抗効果素子及びスピン流磁化反転型磁気抵抗効果素子の製造方法
US10431734B2 (en) 2017-01-24 2019-10-01 Qualcomm Incorporated Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
CN108666339B (zh) * 2017-03-28 2020-11-13 中芯国际集成电路制造(上海)有限公司 磁性随机存储器及其存储单元的制造方法
US10229722B2 (en) * 2017-08-01 2019-03-12 International Business Machines Corporation Three terminal spin hall MRAM
US11276447B2 (en) 2017-08-07 2022-03-15 Tdk Corporation Spin current magnetoresistance effect element and magnetic memory
US10739186B2 (en) * 2017-11-20 2020-08-11 Samsung Electronics Co., Ltd. Bi-directional weight cell
US10971229B2 (en) 2018-04-23 2021-04-06 Arm Limited Method, system and device for integration of volatile and non-volatile memory bitcells
US11165012B2 (en) 2018-10-29 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Magnetic device and magnetic random access memory
US11069853B2 (en) * 2018-11-19 2021-07-20 Applied Materials, Inc. Methods for forming structures for MRAM applications
US10726892B2 (en) 2018-12-06 2020-07-28 Sandisk Technologies Llc Metallic magnetic memory devices for cryogenic operation and methods of operating the same
EP3671749B1 (en) * 2018-12-20 2021-08-11 IMEC vzw Stt-assisted sot-mram bit cell
US10971677B2 (en) * 2018-12-27 2021-04-06 Academia Sinica Electrically controlled nanomagnet and spin orbit torque magnetic random access memory including the same
US11637235B2 (en) 2019-01-18 2023-04-25 Everspin Technologies, Inc. In-plane spin orbit torque magnetoresistive stack/structure and methods therefor
KR102518015B1 (ko) * 2019-01-31 2023-04-05 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
CN111640769B (zh) * 2019-03-01 2023-04-18 中电海康集团有限公司 自旋轨道矩磁性存储器单元及磁性存储器
US10762942B1 (en) 2019-03-29 2020-09-01 Honeywell International Inc. Magneto-resistive random access memory cell with spin-dependent diffusion and state transfer
US11469267B2 (en) * 2019-05-17 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. SOT MRAM having dielectric interfacial layer and method forming same
US10916282B2 (en) * 2019-06-20 2021-02-09 International Business Machines Corporation Control of switching trajectory in spin orbit torque devices by micromagnetic configuration
CN112186098B (zh) * 2019-07-02 2023-04-07 中电海康集团有限公司 基于自旋轨道矩的磁性存储器件及sot-mram存储单元
KR102657361B1 (ko) 2019-07-05 2024-04-17 삼성전자주식회사 자기 메모리 장치
KR102657583B1 (ko) 2019-07-19 2024-04-15 삼성전자주식회사 가변 저항 메모리 소자
US11289538B2 (en) * 2019-07-30 2022-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and semiconductor die, and method of fabricating memory device
US11522009B2 (en) * 2019-07-30 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. MRAM device having self-aligned shunting layer
KR102684718B1 (ko) * 2019-08-14 2024-07-12 삼성전자주식회사 자기 메모리 장치
CN112542190B (zh) * 2019-09-23 2024-11-19 中电海康集团有限公司 存储器、存储器的写入方法和读取方法
US11101320B2 (en) * 2019-10-22 2021-08-24 Samsung Electronics Co., Ltd System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)
JP2021072138A (ja) * 2019-10-29 2021-05-06 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． レーストラック磁気メモリ装置、及びその書き込み方法
US11289143B2 (en) * 2019-10-30 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. SOT-MRAM with shared selector
EP3848933A1 (en) * 2020-01-07 2021-07-14 Antaios Sot mram cell and array comprising a plurality of sot mram cells
US10964367B1 (en) 2020-01-31 2021-03-30 Globalfoundries U.S. Inc. MRAM device comprising random access memory (RAM) and embedded read only memory (ROM)
US11251362B2 (en) 2020-02-18 2022-02-15 International Business Machines Corporation Stacked spin-orbit-torque magnetoresistive random-access memory
CN111489777B (zh) * 2020-04-15 2023-11-10 上海新微技术研发中心有限公司 磁性存储器结构、阵列、读写控制方法及制备方法
US11145347B1 (en) * 2020-05-21 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and memory circuit
US11145676B1 (en) * 2020-05-22 2021-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage element
US11545201B2 (en) * 2020-06-23 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device with unipolar selector
US11226231B1 (en) * 2020-06-25 2022-01-18 Globalfoundries U.S. Inc. Image sensor incorporating an array of optically switchable magnetic tunnel junctions
US12314842B2 (en) 2020-08-10 2025-05-27 Western Digital Technologies, Inc. Matrix-vector multiplication using SOT-based non-volatile memory cells
US11283008B1 (en) * 2020-08-31 2022-03-22 Western Digital Technologies, Inc. Apparatus and methods for magnetic memory devices with magnetic assist layer
US11393516B2 (en) 2020-10-19 2022-07-19 Western Digital Technologies, Inc. SOT-based spin torque oscillators for oscillatory neural networks
US20240349624A1 (en) * 2020-10-29 2024-10-17 The Regents Of The University Of California Spin-orbit rectifier for weak radio frequency energy harvesting
US11342015B1 (en) * 2020-11-24 2022-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device and memory circuit
US12127482B2 (en) 2020-12-09 2024-10-22 International Business Machines Corporation Multi-state SOT-MRAM structure
CN112701216B (zh) * 2020-12-28 2024-01-23 西安交通大学 一种磁多层结构及sot-mram
CN112701214B (zh) * 2020-12-28 2023-09-01 西安交通大学 铁电调控人工反铁磁自由层的自旋轨道矩磁随机存储器
WO2022160226A1 (zh) 2021-01-29 2022-08-04 北京航空航天大学 一种存储阵列、存储器、制备方法及写入方法
US11961544B2 (en) 2021-05-27 2024-04-16 International Business Machines Corporation Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line
US11844284B2 (en) 2021-06-29 2023-12-12 International Business Machines Corporation On-chip integration of a high-efficiency and a high-retention inverted wide-base double magnetic tunnel junction device
WO2023279345A1 (zh) * 2021-07-08 2023-01-12 华为技术有限公司 磁性随机存储器及其数据写入和读取方法、电子设备
US12451175B2 (en) * 2021-07-23 2025-10-21 Taiwan Semiconductor Manufacturing Company, Ltd .. Memory device and formation method thereof
US12317509B2 (en) 2021-08-04 2025-05-27 International Business Machines Corporation Stacked spin-orbit-torque magnetoresistive random-access memory
US12020736B2 (en) * 2021-08-13 2024-06-25 International Business Machines Corporation Spin-orbit-torque magnetoresistive random-access memory array
US11915734B2 (en) 2021-08-13 2024-02-27 International Business Machines Corporation Spin-orbit-torque magnetoresistive random-access memory with integrated diode
US11793001B2 (en) 2021-08-13 2023-10-17 International Business Machines Corporation Spin-orbit-torque magnetoresistive random-access memory
US12016251B2 (en) 2021-08-25 2024-06-18 International Business Machines Corporation Spin-orbit torque and spin-transfer torque magnetoresistive random-access memory stack
CN113782078B (zh) * 2021-09-18 2023-10-10 北京航空航天大学 一种基于磁隧道结的数据处理方法及装置
US11869561B2 (en) 2021-09-23 2024-01-09 International Business Machines Corporation Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ)
CN114184833B (zh) * 2021-10-27 2024-08-20 中国科学院微电子研究所 自旋霍尔器件、霍尔电压的获取方法及最大池化的方法
KR102771697B1 (ko) 2021-10-28 2025-02-25 삼성전자주식회사 반도체 메모리 장치
KR20230096332A (ko) * 2021-12-23 2023-06-30 삼성전자주식회사 자기 메모리 장치
US20230263074A1 (en) * 2022-02-16 2023-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Memory Device Including Bottom Electrode Bridges and Method of Manufacture
JP2024043290A (ja) * 2022-09-16 2024-03-29 キオクシア株式会社 磁気記憶装置
US20250311638A1 (en) * 2023-02-07 2025-10-02 Regents Of The University Of Minnesota Scalable spintronic devices formed on silicon wafers
FR3166512A1 (fr) 2024-09-17 2026-03-20 Commissariat à l'Energie Atomique et aux Energies Alternatives Circuit électronique de mémoire vive magnétique à pilotage en courant

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090185410A1 (en) * 2008-01-22 2009-07-23 Grandis, Inc. Method and system for providing spin transfer tunneling magnetic memories utilizing unidirectional polarity selection devices
US7936580B2 (en) 2008-10-20 2011-05-03 Seagate Technology Llc MRAM diode array and access method
US9076537B2 (en) * 2012-08-26 2015-07-07 Samsung Electronics Co., Ltd. Method and system for providing a magnetic tunneling junction using spin-orbit interaction based switching and memories utilizing the magnetic tunneling junction
US20140252439A1 (en) * 2013-03-08 2014-09-11 T3Memory, Inc. Mram having spin hall effect writing and method of making the same
US8963222B2 (en) 2013-04-17 2015-02-24 Yimin Guo Spin hall effect magnetic-RAM
CN105229741B (zh) * 2013-06-21 2018-03-30 英特尔公司 Mtj自旋霍尔mram位单元以及阵列
US9691458B2 (en) * 2013-10-18 2017-06-27 Cornell University Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers
US9343658B2 (en) 2013-10-30 2016-05-17 The Regents Of The University Of California Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques
US9230627B2 (en) 2014-01-28 2016-01-05 Qualcomm Incorporated High density low power GSHE-STT MRAM
KR102419536B1 (ko) 2014-07-17 2022-07-11 코넬 유니버시티 효율적인 스핀 전달 토크를 위한 향상된 스핀 홀 효과에 기초한 회로들 및 디바이스들
US9634241B2 (en) 2014-08-06 2017-04-25 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions including Heusler multilayers
US9218864B1 (en) 2014-10-04 2015-12-22 Ge Yi Magnetoresistive random access memory cell and 3D memory cell array
US9300295B1 (en) * 2014-10-30 2016-03-29 Qualcomm Incorporated Elimination of undesirable current paths in GSHE-MTJ based circuits
CN105161613A (zh) * 2015-08-18 2015-12-16 北京航空航天大学 一种基于双势垒结构的磁存储器件
CN105280214B (zh) * 2015-09-10 2018-02-27 中国科学院物理研究所 电流驱动型磁随机存取存储器和自旋逻辑器件
US9614002B1 (en) 2016-01-21 2017-04-04 Samsung Electronics Co., Ltd. 0T bi-directional memory cell
US9858975B1 (en) * 2016-08-24 2018-01-02 Samsung Electronics Co., Ltd. Zero transistor transverse current bi-directional bitcell

Also Published As

Publication number Publication date
JP2019531596A (ja) 2019-10-31
JP6727410B2 (ja) 2020-07-22
US20180061467A1 (en) 2018-03-01
EP3504711A1 (en) 2019-07-03
WO2018038849A1 (en) 2018-03-01
US10381060B2 (en) 2019-08-13
CN109643567A (zh) 2019-04-16
KR20190040489A (ko) 2019-04-18
EP3504711B1 (en) 2022-03-16

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