JP6727410B2 - 高速低電力スピン軌道トルク（ｓｏｔ）支援スピントランスファートルク磁気ランダムアクセスメモリ（ｓｔｔ−ｍｒａｍ）ビットセルアレイ - Google Patents
高速低電力スピン軌道トルク（ｓｏｔ）支援スピントランスファートルク磁気ランダムアクセスメモリ（ｓｔｔ−ｍｒａｍ）ビットセルアレイ Download PDFInfo
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- JP6727410B2 JP6727410B2 JP2019510435A JP2019510435A JP6727410B2 JP 6727410 B2 JP6727410 B2 JP 6727410B2 JP 2019510435 A JP2019510435 A JP 2019510435A JP 2019510435 A JP2019510435 A JP 2019510435A JP 6727410 B2 JP6727410 B2 JP 6727410B2
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/247,791 | 2016-08-25 | ||
| US15/247,791 US10381060B2 (en) | 2016-08-25 | 2016-08-25 | High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array |
| PCT/US2017/043691 WO2018038849A1 (en) | 2016-08-25 | 2017-07-25 | High speed, low power spin-orbit torque (sot) assisted spin-transfer torque magnetic random access memory (stt-mram) bit cell array |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019531596A JP2019531596A (ja) | 2019-10-31 |
| JP2019531596A5 JP2019531596A5 (https=) | 2019-12-19 |
| JP6727410B2 true JP6727410B2 (ja) | 2020-07-22 |
Family
ID=59501640
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019510435A Expired - Fee Related JP6727410B2 (ja) | 2016-08-25 | 2017-07-25 | 高速低電力スピン軌道トルク（ｓｏｔ）支援スピントランスファートルク磁気ランダムアクセスメモリ（ｓｔｔ−ｍｒａｍ）ビットセルアレイ |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10381060B2 (https=) |
| EP (1) | EP3504711B1 (https=) |
| JP (1) | JP6727410B2 (https=) |
| KR (1) | KR20190040489A (https=) |
| CN (1) | CN109643567A (https=) |
| BR (1) | BR112019003392A2 (https=) |
| WO (1) | WO2018038849A1 (https=) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017090728A1 (ja) | 2015-11-27 | 2017-06-01 | Tdk株式会社 | スピン流磁化反転素子、磁気抵抗効果素子、および磁気メモリ |
| US10431734B2 (en) * | 2017-01-24 | 2019-10-01 | Qualcomm Incorporated | Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory |
| CN108666339B (zh) * | 2017-03-28 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 磁性随机存储器及其存储单元的制造方法 |
| US10229722B2 (en) * | 2017-08-01 | 2019-03-12 | International Business Machines Corporation | Three terminal spin hall MRAM |
| JP6733822B2 (ja) | 2017-08-07 | 2020-08-05 | Tdk株式会社 | スピン流磁気抵抗効果素子及び磁気メモリ |
| US10739186B2 (en) * | 2017-11-20 | 2020-08-11 | Samsung Electronics Co., Ltd. | Bi-directional weight cell |
| US10971229B2 (en) | 2018-04-23 | 2021-04-06 | Arm Limited | Method, system and device for integration of volatile and non-volatile memory bitcells |
| US11165012B2 (en) * | 2018-10-29 | 2021-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic device and magnetic random access memory |
| US11069853B2 (en) * | 2018-11-19 | 2021-07-20 | Applied Materials, Inc. | Methods for forming structures for MRAM applications |
| US10726892B2 (en) | 2018-12-06 | 2020-07-28 | Sandisk Technologies Llc | Metallic magnetic memory devices for cryogenic operation and methods of operating the same |
| EP3671749B1 (en) * | 2018-12-20 | 2021-08-11 | IMEC vzw | Stt-assisted sot-mram bit cell |
| US10971677B2 (en) * | 2018-12-27 | 2021-04-06 | Academia Sinica | Electrically controlled nanomagnet and spin orbit torque magnetic random access memory including the same |
| US11637235B2 (en) | 2019-01-18 | 2023-04-25 | Everspin Technologies, Inc. | In-plane spin orbit torque magnetoresistive stack/structure and methods therefor |
| KR102518015B1 (ko) * | 2019-01-31 | 2023-04-05 | 삼성전자주식회사 | 자기 저항 메모리 소자 및 그 제조 방법 |
| CN111640769B (zh) * | 2019-03-01 | 2023-04-18 | 中电海康集团有限公司 | 自旋轨道矩磁性存储器单元及磁性存储器 |
| US10762942B1 (en) | 2019-03-29 | 2020-09-01 | Honeywell International Inc. | Magneto-resistive random access memory cell with spin-dependent diffusion and state transfer |
| US11469267B2 (en) | 2019-05-17 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | SOT MRAM having dielectric interfacial layer and method forming same |
| US10916282B2 (en) * | 2019-06-20 | 2021-02-09 | International Business Machines Corporation | Control of switching trajectory in spin orbit torque devices by micromagnetic configuration |
| CN112186098B (zh) * | 2019-07-02 | 2023-04-07 | 中电海康集团有限公司 | 基于自旋轨道矩的磁性存储器件及sot-mram存储单元 |
| KR102657361B1 (ko) | 2019-07-05 | 2024-04-17 | 삼성전자주식회사 | 자기 메모리 장치 |
| KR102657583B1 (ko) | 2019-07-19 | 2024-04-15 | 삼성전자주식회사 | 가변 저항 메모리 소자 |
| US11522009B2 (en) * | 2019-07-30 | 2022-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | MRAM device having self-aligned shunting layer |
| US11289538B2 (en) * | 2019-07-30 | 2022-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and semiconductor die, and method of fabricating memory device |
| KR102684718B1 (ko) * | 2019-08-14 | 2024-07-12 | 삼성전자주식회사 | 자기 메모리 장치 |
| CN112542190B (zh) * | 2019-09-23 | 2024-11-19 | 中电海康集团有限公司 | 存储器、存储器的写入方法和读取方法 |
| US11101320B2 (en) * | 2019-10-22 | 2021-08-24 | Samsung Electronics Co., Ltd | System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs) |
| JP2021072138A (ja) * | 2019-10-29 | 2021-05-06 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | レーストラック磁気メモリ装置、及びその書き込み方法 |
| US11289143B2 (en) * | 2019-10-30 | 2022-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | SOT-MRAM with shared selector |
| EP3848933A1 (en) * | 2020-01-07 | 2021-07-14 | Antaios | Sot mram cell and array comprising a plurality of sot mram cells |
| US10964367B1 (en) | 2020-01-31 | 2021-03-30 | Globalfoundries U.S. Inc. | MRAM device comprising random access memory (RAM) and embedded read only memory (ROM) |
| US11251362B2 (en) | 2020-02-18 | 2022-02-15 | International Business Machines Corporation | Stacked spin-orbit-torque magnetoresistive random-access memory |
| CN111489777B (zh) * | 2020-04-15 | 2023-11-10 | 上海新微技术研发中心有限公司 | 磁性存储器结构、阵列、读写控制方法及制备方法 |
| US11145347B1 (en) * | 2020-05-21 | 2021-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and memory circuit |
| US11145676B1 (en) * | 2020-05-22 | 2021-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and multi-level memory cell having ferroelectric storage element and magneto-resistive storage element |
| US11545201B2 (en) | 2020-06-23 | 2023-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device with unipolar selector |
| US11226231B1 (en) * | 2020-06-25 | 2022-01-18 | Globalfoundries U.S. Inc. | Image sensor incorporating an array of optically switchable magnetic tunnel junctions |
| US12314842B2 (en) | 2020-08-10 | 2025-05-27 | Western Digital Technologies, Inc. | Matrix-vector multiplication using SOT-based non-volatile memory cells |
| US11283008B1 (en) * | 2020-08-31 | 2022-03-22 | Western Digital Technologies, Inc. | Apparatus and methods for magnetic memory devices with magnetic assist layer |
| US11393516B2 (en) | 2020-10-19 | 2022-07-19 | Western Digital Technologies, Inc. | SOT-based spin torque oscillators for oscillatory neural networks |
| WO2022094107A1 (en) * | 2020-10-29 | 2022-05-05 | The Regents Of The University Of California | Spin-orbit rectifier for weak radio frequency energy harvesting |
| US11342015B1 (en) * | 2020-11-24 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory device and memory circuit |
| US12127482B2 (en) | 2020-12-09 | 2024-10-22 | International Business Machines Corporation | Multi-state SOT-MRAM structure |
| CN112701216B (zh) * | 2020-12-28 | 2024-01-23 | 西安交通大学 | 一种磁多层结构及sot-mram |
| CN112701214B (zh) * | 2020-12-28 | 2023-09-01 | 西安交通大学 | 铁电调控人工反铁磁自由层的自旋轨道矩磁随机存储器 |
| WO2022160226A1 (zh) | 2021-01-29 | 2022-08-04 | 北京航空航天大学 | 一种存储阵列、存储器、制备方法及写入方法 |
| US11961544B2 (en) | 2021-05-27 | 2024-04-16 | International Business Machines Corporation | Spin-orbit torque (SOT) magnetoresistive random-access memory (MRAM) with low resistivity spin hall effect (SHE) write line |
| US11844284B2 (en) | 2021-06-29 | 2023-12-12 | International Business Machines Corporation | On-chip integration of a high-efficiency and a high-retention inverted wide-base double magnetic tunnel junction device |
| WO2023279345A1 (zh) * | 2021-07-08 | 2023-01-12 | 华为技术有限公司 | 磁性随机存储器及其数据写入和读取方法、电子设备 |
| US12451175B2 (en) * | 2021-07-23 | 2025-10-21 | Taiwan Semiconductor Manufacturing Company, Ltd .. | Memory device and formation method thereof |
| US12317509B2 (en) | 2021-08-04 | 2025-05-27 | International Business Machines Corporation | Stacked spin-orbit-torque magnetoresistive random-access memory |
| US11793001B2 (en) | 2021-08-13 | 2023-10-17 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory |
| US11915734B2 (en) | 2021-08-13 | 2024-02-27 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory with integrated diode |
| US12020736B2 (en) * | 2021-08-13 | 2024-06-25 | International Business Machines Corporation | Spin-orbit-torque magnetoresistive random-access memory array |
| US12016251B2 (en) | 2021-08-25 | 2024-06-18 | International Business Machines Corporation | Spin-orbit torque and spin-transfer torque magnetoresistive random-access memory stack |
| CN113782078B (zh) * | 2021-09-18 | 2023-10-10 | 北京航空航天大学 | 一种基于磁隧道结的数据处理方法及装置 |
| US11869561B2 (en) | 2021-09-23 | 2024-01-09 | International Business Machines Corporation | Spin orbit-torque magnetic random-access memory (SOT-MRAM) with cross-point spin hall effect (SHE) write lines and remote sensing read magnetic tunnel-junction (MTJ) |
| CN114184833B (zh) * | 2021-10-27 | 2024-08-20 | 中国科学院微电子研究所 | 自旋霍尔器件、霍尔电压的获取方法及最大池化的方法 |
| KR102771697B1 (ko) * | 2021-10-28 | 2025-02-25 | 삼성전자주식회사 | 반도체 메모리 장치 |
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| JP2024043290A (ja) * | 2022-09-16 | 2024-03-29 | キオクシア株式会社 | 磁気記憶装置 |
| US20250311638A1 (en) * | 2023-02-07 | 2025-10-02 | Regents Of The University Of Minnesota | Scalable spintronic devices formed on silicon wafers |
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| WO2015102739A2 (en) * | 2013-10-18 | 2015-07-09 | Cornell University | Circuits and devices based on spin hall effect to apply a spin transfer torque with a component perpendicular to the plane of magnetic layers |
| US9343658B2 (en) | 2013-10-30 | 2016-05-17 | The Regents Of The University Of California | Magnetic memory bits with perpendicular magnetization switched by current-induced spin-orbit torques |
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| US10008248B2 (en) | 2014-07-17 | 2018-06-26 | Cornell University | Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque |
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| US9218864B1 (en) | 2014-10-04 | 2015-12-22 | Ge Yi | Magnetoresistive random access memory cell and 3D memory cell array |
| US9300295B1 (en) * | 2014-10-30 | 2016-03-29 | Qualcomm Incorporated | Elimination of undesirable current paths in GSHE-MTJ based circuits |
| CN105161613A (zh) * | 2015-08-18 | 2015-12-16 | 北京航空航天大学 | 一种基于双势垒结构的磁存储器件 |
| CN105280214B (zh) * | 2015-09-10 | 2018-02-27 | 中国科学院物理研究所 | 电流驱动型磁随机存取存储器和自旋逻辑器件 |
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| US9858975B1 (en) * | 2016-08-24 | 2018-01-02 | Samsung Electronics Co., Ltd. | Zero transistor transverse current bi-directional bitcell |
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| EP3504711A1 (en) | 2019-07-03 |
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| BR112019003392A2 (pt) | 2019-05-21 |
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