JP2017152071A5 - - Google Patents

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JP2017152071A5
JP2017152071A5 JP2016238559A JP2016238559A JP2017152071A5 JP 2017152071 A5 JP2017152071 A5 JP 2017152071A5 JP 2016238559 A JP2016238559 A JP 2016238559A JP 2016238559 A JP2016238559 A JP 2016238559A JP 2017152071 A5 JP2017152071 A5 JP 2017152071A5
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JP
Japan
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mtj
transistor
terminal
bit line
ground conductor
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JP2016238559A
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Japanese (ja)
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JP2017152071A (ja
JP6657063B2 (ja
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Publication of JP2017152071A5 publication Critical patent/JP2017152071A5/ja
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JP2016238559A 2015-12-09 2016-12-08 ３トランジスタ２接合ｍｒａｍビットセル Active JP6657063B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP15198573 2015-12-09
EP15198573.6 2015-12-09

Publications (3)

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JP2017152071A JP2017152071A (ja) 2017-08-31
JP2017152071A5 true JP2017152071A5 (https=) 2019-12-12
JP6657063B2 JP6657063B2 (ja) 2020-03-04

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JP2016238559A Active JP6657063B2 (ja) 2015-12-09 2016-12-08 ３トランジスタ２接合ｍｒａｍビットセル

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US (1) US10127961B2 (https=)
JP (1) JP6657063B2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6421309B2 (ja) * 2013-09-30 2018-11-14 テンパール工業株式会社 端子台
EP3435413A1 (en) * 2017-07-28 2019-01-30 IMEC vzw A semiconductor device and a method for forming a semiconductor device
US11290110B2 (en) * 2017-10-26 2022-03-29 Samsung Electronics Co., Ltd. Method and system for providing a variation resistant magnetic junction-based XNOR cell usable in neuromorphic computing
US10461751B2 (en) 2018-03-08 2019-10-29 Samsung Electronics Co., Ltd. FE-FET-based XNOR cell usable in neuromorphic computing
US10726896B1 (en) 2019-01-30 2020-07-28 Globalfoundries Inc. Resistive nonvolatile memory structure employing a statistical sensing scheme and method
CN112542189B (zh) * 2019-09-20 2024-07-16 中芯国际集成电路制造(上海)有限公司 磁性存储器及其编程控制方法、读取方法、磁性存储装置
US11101320B2 (en) 2019-10-22 2021-08-24 Samsung Electronics Co., Ltd System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)
TWI852976B (zh) * 2020-01-07 2024-08-21 聯華電子股份有限公司 記憶體
CN112382319B (zh) * 2020-10-10 2023-01-17 中国科学院微电子研究所 一种自参考存储结构和存算一体电路
TW202547280A (zh) * 2024-05-15 2025-12-01 聯華電子股份有限公司 磁阻式隨機存取記憶體電路與佈局結構

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7272034B1 (en) * 2005-08-31 2007-09-18 Grandis, Inc. Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells
US7742329B2 (en) * 2007-03-06 2010-06-22 Qualcomm Incorporated Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
US8995180B2 (en) * 2012-11-29 2015-03-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetoresistive random access memory (MRAM) differential bit cell and method of use
US9218877B2 (en) * 2013-06-19 2015-12-22 Broadcom Corporation Differential bit cell

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