JP2019514042A5 - - Google Patents
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- JP2019514042A5 JP2019514042A5 JP2018547903A JP2018547903A JP2019514042A5 JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5 JP 2018547903 A JP2018547903 A JP 2018547903A JP 2018547903 A JP2018547903 A JP 2018547903A JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5
- Authority
- JP
- Japan
- Prior art keywords
- buffer
- further embodiments
- hardmask
- nitride
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662306979P | 2016-03-11 | 2016-03-11 | |
| US62/306,979 | 2016-03-11 | ||
| PCT/US2017/021769 WO2017156388A1 (en) | 2016-03-11 | 2017-03-10 | Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019514042A JP2019514042A (ja) | 2019-05-30 |
| JP2019514042A5 true JP2019514042A5 (enExample) | 2021-08-12 |
| JP6993982B2 JP6993982B2 (ja) | 2022-02-04 |
Family
ID=59786564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018547903A Active JP6993982B2 (ja) | 2016-03-11 | 2017-03-10 | 予めパターン形成されたリソグラフィ・テンプレート、該テンプレートを使用した放射線パターニングに基づくプロセス、及び該テンプレートを形成するためのプロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10649328B2 (enExample) |
| JP (1) | JP6993982B2 (enExample) |
| KR (1) | KR102394042B1 (enExample) |
| CN (1) | CN108780739B (enExample) |
| TW (1) | TWI721125B (enExample) |
| WO (1) | WO2017156388A1 (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| KR102306612B1 (ko) | 2014-01-31 | 2021-09-29 | 램 리써치 코포레이션 | 진공-통합된 하드마스크 프로세스 및 장치 |
| GB201413924D0 (en) | 2014-08-06 | 2014-09-17 | Univ Manchester | Electron beam resist composition |
| GB201517273D0 (en) | 2015-09-30 | 2015-11-11 | Univ Manchester | Resist composition |
| US10649328B2 (en) | 2016-03-11 | 2020-05-12 | Inpria Corporation | Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates |
| WO2018052397A1 (en) * | 2016-09-13 | 2018-03-22 | Google Llc | Buffer layer to prevent etching by photoresist developer |
| US10217633B2 (en) * | 2017-03-13 | 2019-02-26 | Globalfoundries Inc. | Substantially defect-free polysilicon gate arrays |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| JP7164773B2 (ja) * | 2018-03-02 | 2022-11-02 | 東京エレクトロン株式会社 | パターンを層に転写する方法 |
| WO2019195422A1 (en) * | 2018-04-03 | 2019-10-10 | Tokyo Electron Limited | Subtractive interconnect formation using a fully self-aligned scheme |
| CN112020770B (zh) * | 2018-04-16 | 2024-12-27 | 应用材料公司 | 使用暂时及永久接合的多层堆叠光学元件 |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| CN113227909B (zh) * | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| KR20210149893A (ko) | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스 |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| JP7589179B2 (ja) | 2019-06-28 | 2024-11-25 | ラム リサーチ コーポレーション | 金属含有レジストのリソグラフィ性能を向上させるためのベーキング方法 |
| CN114270266A (zh) | 2019-06-28 | 2022-04-01 | 朗姆研究公司 | 具有多个图案化辐射吸收元素和/或竖直组成梯度的光致抗蚀剂 |
| EP4651192A3 (en) | 2020-01-15 | 2026-03-04 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| KR20220148249A (ko) | 2020-02-28 | 2022-11-04 | 램 리써치 코포레이션 | EUV 패터닝의 결함 감소를 위한 다층 하드마스크 (multi-layer hardmask) |
| KR20230005970A (ko) | 2020-05-06 | 2023-01-10 | 인프리아 코포레이션 | 중간 고정 단계가 있는 유기금속 광패턴가능 층을 사용한 다중 패터닝 |
| KR20230041688A (ko) | 2020-06-22 | 2023-03-24 | 램 리써치 코포레이션 | 금속-함유 포토레지스트 (photoresist) 증착을 위한 표면 개질 |
| US12416863B2 (en) * | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| EP4078292A4 (en) | 2020-07-07 | 2023-11-22 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| CN113937182B (zh) * | 2020-07-13 | 2024-07-12 | 中国科学院理化技术研究所 | 一种具有柔性基底的尺寸可控的氧化锌基光电器件及其制备方法 |
| US11079682B1 (en) * | 2020-11-13 | 2021-08-03 | Tokyo Electron Limited | Methods for extreme ultraviolet (EUV) resist patterning development |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP7681106B2 (ja) | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| US20220199406A1 (en) * | 2020-12-17 | 2022-06-23 | Applied Materials, Inc. | Vapor deposition of carbon-doped metal oxides for use as photoresists |
| US20220262625A1 (en) * | 2021-02-18 | 2022-08-18 | Applied Materials, Inc. | Chemical vapor condensation deposition of photoresist films |
| US12494368B2 (en) * | 2021-11-12 | 2025-12-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist and method |
| CN118235092A (zh) | 2021-11-15 | 2024-06-21 | 日产化学株式会社 | 多环芳香族烃系光固化性树脂组合物 |
| WO2023204287A1 (ja) | 2022-04-22 | 2023-10-26 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
| WO2023235534A1 (en) | 2022-06-02 | 2023-12-07 | Gelest, Inc. | High purity alkyl tin compounds and manufacturing methods thereof |
| KR20240160248A (ko) | 2022-07-01 | 2024-11-08 | 램 리써치 코포레이션 | 에칭 정지 억제를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| US12060377B2 (en) | 2022-08-12 | 2024-08-13 | Gelest, Inc. | High purity tin compounds containing unsaturated substituent and method for preparation thereof |
| US12606577B2 (en) | 2022-09-28 | 2026-04-21 | Gelest, Inc. | Iodoalkyl tin compounds and preparation methods thereof |
| US12145955B2 (en) | 2022-10-04 | 2024-11-19 | Gelest, Inc. | Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof |
| KR20250117436A (ko) | 2022-12-15 | 2025-08-04 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
| KR20250121560A (ko) | 2022-12-15 | 2025-08-12 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
| KR102839122B1 (ko) | 2023-01-23 | 2025-07-28 | 닛산 가가쿠 가부시키가이샤 | 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물 |
| KR20250145002A (ko) | 2023-02-03 | 2025-10-13 | 닛산 가가쿠 가부시키가이샤 | 환경 부하를 저감하기 위한 레지스트 하층막 형성용 조성물 |
| JPWO2024166869A1 (enExample) | 2023-02-09 | 2024-08-15 | ||
| EP4657158A4 (en) | 2023-02-27 | 2026-04-29 | Nissan Chemical Corp | PHOTOSENSITIVE RESIN UNDERCOAT FILM FORMING COMPOSITION |
| JPWO2024181394A1 (enExample) | 2023-02-28 | 2024-09-06 | ||
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| EP4679146A1 (en) | 2023-03-24 | 2026-01-14 | Nissan Chemical Corporation | Composition for forming resist underlayer film for manufacturing optical diffraction body |
| WO2024197615A1 (zh) * | 2023-03-29 | 2024-10-03 | 京东方科技集团股份有限公司 | 金属网格的制备方法和天线的制备方法 |
| CN121014020A (zh) | 2023-03-30 | 2025-11-25 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
| EP4692944A1 (en) | 2023-03-31 | 2026-02-11 | Nissan Chemical Corporation | Composition for forming resist underlayer film |
| CN120693572A (zh) | 2023-03-31 | 2025-09-23 | 日产化学株式会社 | 抗蚀剂下层膜形成用组合物 |
| TW202511310A (zh) | 2023-05-09 | 2025-03-16 | 日商日產化學股份有限公司 | 阻劑下層膜形成用組成物 |
| KR20250069677A (ko) | 2023-07-27 | 2025-05-19 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
| CN117364235B (zh) * | 2023-12-07 | 2024-03-26 | 度亘核芯光电技术(苏州)有限公司 | 选区外延生长方法及其中使用的掩膜结构 |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5302198A (en) | 1990-09-14 | 1994-04-12 | Ncr Corporation | Coating solution for forming glassy layers |
| US5270265A (en) * | 1992-09-01 | 1993-12-14 | Harris Corporation | Stress relief technique of removing oxide from surface of trench-patterned semiconductor-on-insulator structure |
| JP3198310B2 (ja) | 1993-01-06 | 2001-08-13 | 株式会社ニコン | 露光方法及び装置 |
| EP1305824A4 (en) | 2000-06-06 | 2007-07-25 | Univ Fraser Simon | METHOD FOR PRODUCING ELECTRONIC MATERIALS |
| US7270886B2 (en) | 2000-10-12 | 2007-09-18 | Samsung Electronics Co., Ltd. | Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same |
| US6368982B1 (en) * | 2000-11-15 | 2002-04-09 | Advanced Micro Devices, Inc. | Pattern reduction by trimming a plurality of layers of different handmask materials |
| US20020157418A1 (en) | 2001-03-19 | 2002-10-31 | Rahul Ganguli | Process for reducing or eliminating bubble defects in sol-gel silica glass |
| US7160746B2 (en) | 2001-07-27 | 2007-01-09 | Lightwave Microsystems Corporation | GeBPSG top clad for a planar lightwave circuit |
| JP2003303824A (ja) * | 2002-04-12 | 2003-10-24 | Sony Corp | 半導体装置の製造方法 |
| US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
| JP4932134B2 (ja) * | 2003-09-16 | 2012-05-16 | 旺宏電子股▲ふん▼有限公司 | 集積回路の製造における位置合わせ精度条件を緩和する方法 |
| US7348281B2 (en) * | 2003-09-19 | 2008-03-25 | Brewer Science Inc. | Method of filling structures for forming via-first dual damascene interconnects |
| KR100583957B1 (ko) | 2003-12-03 | 2006-05-26 | 삼성전자주식회사 | 희생금속산화막을 채택하여 이중다마신 금속배선을형성하는 방법 |
| JP4839723B2 (ja) | 2005-08-10 | 2011-12-21 | 富士電機株式会社 | 保護膜形成方法およびその保護膜を備えた磁気記録媒体 |
| JP4699140B2 (ja) | 2005-08-29 | 2011-06-08 | 東京応化工業株式会社 | パターン形成方法 |
| US7572572B2 (en) * | 2005-09-01 | 2009-08-11 | Micron Technology, Inc. | Methods for forming arrays of small, closely spaced features |
| US20070166648A1 (en) | 2006-01-17 | 2007-07-19 | International Business Machines Corporation | Integrated lithography and etch for dual damascene structures |
| US20070190762A1 (en) | 2006-02-13 | 2007-08-16 | Asml Netherlands B.V. | Device manufacturing method and computer program product |
| US7897058B2 (en) * | 2006-02-13 | 2011-03-01 | Asml Netherlands B.V. | Device manufacturing method and computer program product |
| KR100790999B1 (ko) * | 2006-10-17 | 2008-01-03 | 삼성전자주식회사 | 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법 |
| US8907456B2 (en) * | 2007-03-21 | 2014-12-09 | Olambda, Inc. | Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography |
| CN101883688A (zh) * | 2007-11-16 | 2010-11-10 | Ekc技术公司 | 用来从半导体基板除去金属硬掩模蚀刻残余物的组合物 |
| KR100933868B1 (ko) * | 2008-03-10 | 2009-12-24 | 주식회사 하이닉스반도체 | 마스크 패턴 형성 방법 |
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| JP5558327B2 (ja) | 2010-12-10 | 2014-07-23 | 株式会社東芝 | パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法 |
| KR101732936B1 (ko) * | 2011-02-14 | 2017-05-08 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
| KR20120092950A (ko) | 2011-02-14 | 2012-08-22 | 에스케이하이닉스 주식회사 | 리소그래피-리소그래피-식각 공정에서의 오버레이 버니어 형성 방법 |
| US9281207B2 (en) | 2011-02-28 | 2016-03-08 | Inpria Corporation | Solution processible hardmasks for high resolution lithography |
| US9684234B2 (en) | 2011-03-24 | 2017-06-20 | Uchicago Argonne, Llc | Sequential infiltration synthesis for enhancing multiple-patterning lithography |
| US8409965B2 (en) * | 2011-04-26 | 2013-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for LED with nano-patterned substrate |
| JP2012253056A (ja) * | 2011-05-31 | 2012-12-20 | Toshiba Corp | 半導体装置の製造方法 |
| TWI492298B (zh) * | 2011-08-26 | 2015-07-11 | 應用材料股份有限公司 | 雙重圖案化蝕刻製程 |
| WO2013055798A1 (en) | 2011-10-10 | 2013-04-18 | Brewer Science Inc. | Spin-on carbon compositions for lithographic processing |
| SG10201608504SA (en) | 2011-12-19 | 2016-12-29 | Canon Nanotechnologies Inc | Fabrication of seamless large area master templates for imprint lithography |
| US8551690B2 (en) * | 2012-01-20 | 2013-10-08 | Micron Technology, Inc. | Methods of forming patterns |
| US8916337B2 (en) * | 2012-02-22 | 2014-12-23 | International Business Machines Corporation | Dual hard mask lithography process |
| US8703386B2 (en) | 2012-02-27 | 2014-04-22 | International Business Machines Corporation | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| CN104380194B (zh) * | 2012-04-16 | 2019-05-31 | 布鲁尔科技公司 | 用于导向自组装的硅硬掩模层 |
| JP6028384B2 (ja) | 2012-05-07 | 2016-11-16 | 大日本印刷株式会社 | ナノインプリントリソグラフィ用テンプレートの製造方法 |
| US8647981B1 (en) * | 2012-08-31 | 2014-02-11 | Micron Technology, Inc. | Methods of forming patterns, and methods of forming integrated circuitry |
| US9679095B1 (en) | 2013-02-19 | 2017-06-13 | Mentor Graphics, A Siemens Business | Layout decomposition for multiple patterning lithography |
| US9005875B2 (en) | 2013-03-15 | 2015-04-14 | Intel Corporation | Pre-patterned hard mask for ultrafast lithographic imaging |
| JP2014239191A (ja) | 2013-06-10 | 2014-12-18 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US9176373B2 (en) | 2013-07-31 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for decomposition of a single photoresist mask pattern into 3 photoresist mask patterns |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| US9372402B2 (en) | 2013-09-13 | 2016-06-21 | The Research Foundation For The State University Of New York | Molecular organometallic resists for EUV |
| WO2015084523A1 (en) | 2013-12-05 | 2015-06-11 | Tokyo Electron Limited | Direct current superposition freeze |
| US20150234272A1 (en) | 2014-02-14 | 2015-08-20 | Intel Corporation | Metal oxide nanoparticles and photoresist compositions |
| TWI545622B (zh) | 2014-02-23 | 2016-08-11 | 東京威力科創股份有限公司 | 藉由交叉多重圖案化層以增加圖案密度的方法 |
| KR102319630B1 (ko) | 2014-10-23 | 2021-10-29 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| KR20260059663A (ko) | 2015-10-13 | 2026-04-30 | 인프리아 코포레이션 | 유기주석 옥사이드 하이드록사이드 패터닝 조성물, 전구체 및 패터닝 |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10649328B2 (en) | 2016-03-11 | 2020-05-12 | Inpria Corporation | Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates |
| US10627719B2 (en) | 2016-08-12 | 2020-04-21 | Inpria Corporation | Methods of reducing metal residue in edge bead region from metal-containing resists |
| KR102918243B1 (ko) | 2017-11-20 | 2026-01-26 | 인프리아 코포레이션 | 유기주석 클러스터, 유기주석 클러스터의 용액, 및 고해상도 패턴화에 대한 적용 |
| TWI778248B (zh) | 2018-04-05 | 2022-09-21 | 美商英培雅股份有限公司 | 錫十二聚物及具有強euv吸收的輻射可圖案化塗層 |
| EP3953767A4 (en) | 2019-04-12 | 2023-06-07 | Inpria Corporation | ORGANOMETALLIC PHOTORESIN DEVELOPER COMPOSITIONS AND METHODS OF TREATMENT |
-
2017
- 2017-03-10 US US15/455,784 patent/US10649328B2/en active Active
- 2017-03-10 TW TW106108071A patent/TWI721125B/zh active
- 2017-03-10 WO PCT/US2017/021769 patent/WO2017156388A1/en not_active Ceased
- 2017-03-10 CN CN201780016440.8A patent/CN108780739B/zh active Active
- 2017-03-10 KR KR1020187029161A patent/KR102394042B1/ko active Active
- 2017-03-10 JP JP2018547903A patent/JP6993982B2/ja active Active
-
2020
- 2020-04-01 US US16/837,666 patent/US11347145B2/en active Active
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