JP2019514042A5 - - Google Patents
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- JP2019514042A5 JP2019514042A5 JP2018547903A JP2018547903A JP2019514042A5 JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5 JP 2018547903 A JP2018547903 A JP 2018547903A JP 2018547903 A JP2018547903 A JP 2018547903A JP 2019514042 A5 JP2019514042 A5 JP 2019514042A5
- Authority
- JP
- Japan
- Prior art keywords
- buffer
- further embodiments
- hardmask
- nitride
- silicon nitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662306979P | 2016-03-11 | 2016-03-11 | |
| US62/306,979 | 2016-03-11 | ||
| PCT/US2017/021769 WO2017156388A1 (en) | 2016-03-11 | 2017-03-10 | Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019514042A JP2019514042A (ja) | 2019-05-30 |
| JP2019514042A5 true JP2019514042A5 (enExample) | 2021-08-12 |
| JP6993982B2 JP6993982B2 (ja) | 2022-02-04 |
Family
ID=59786564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018547903A Active JP6993982B2 (ja) | 2016-03-11 | 2017-03-10 | 予めパターン形成されたリソグラフィ・テンプレート、該テンプレートを使用した放射線パターニングに基づくプロセス、及び該テンプレートを形成するためのプロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10649328B2 (enExample) |
| JP (1) | JP6993982B2 (enExample) |
| KR (1) | KR102394042B1 (enExample) |
| CN (1) | CN108780739B (enExample) |
| TW (1) | TWI721125B (enExample) |
| WO (1) | WO2017156388A1 (enExample) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9176377B2 (en) * | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| TWI639179B (zh) | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| GB201413924D0 (en) | 2014-08-06 | 2014-09-17 | Univ Manchester | Electron beam resist composition |
| GB201517273D0 (en) | 2015-09-30 | 2015-11-11 | Univ Manchester | Resist composition |
| KR102394042B1 (ko) | 2016-03-11 | 2022-05-03 | 인프리아 코포레이션 | 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 |
| CN109844642B (zh) * | 2016-09-13 | 2022-11-22 | 谷歌有限责任公司 | 防止光致抗蚀剂显影剂蚀刻的缓冲层 |
| US10217633B2 (en) * | 2017-03-13 | 2019-02-26 | Globalfoundries Inc. | Substantially defect-free polysilicon gate arrays |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| WO2019169122A1 (en) * | 2018-03-02 | 2019-09-06 | Tokyo Electron Limited | Method to transfer patterns to a layer |
| US10886176B2 (en) * | 2018-04-03 | 2021-01-05 | Tokyo Electron Limited | Self-aligned interconnect patterning for back-end-of-line (BEOL) structures including self-aligned via through the underlying interlevel metal layer |
| WO2019203926A1 (en) * | 2018-04-16 | 2019-10-24 | Applied Materials, Inc. | Multi stack optical elements using temporary and permanent bonding |
| JP7653908B2 (ja) | 2018-11-14 | 2025-03-31 | ラム リサーチ コーポレーション | 次世代リソグラフィにおいて有用なハードマスクを作製する方法 |
| CN120762258A (zh) * | 2018-12-20 | 2025-10-10 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TWI849083B (zh) | 2019-03-18 | 2024-07-21 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| KR20210149893A (ko) | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스 |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| EP4651192A3 (en) | 2020-01-15 | 2026-03-04 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| EP4147269A4 (en) | 2020-05-06 | 2024-06-05 | Inpria Corporation | MULTIPLE STRUCTURING WITH ORGANOMETALLIC PHOTOSTRUCTURABLE LAYERS WITH INTERMEDIATE FREEZING STEPS |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US12416863B2 (en) * | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| KR102601038B1 (ko) | 2020-07-07 | 2023-11-09 | 램 리써치 코포레이션 | 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스 |
| CN113937182B (zh) * | 2020-07-13 | 2024-07-12 | 中国科学院理化技术研究所 | 一种具有柔性基底的尺寸可控的氧化锌基光电器件及其制备方法 |
| KR102673863B1 (ko) | 2020-11-13 | 2024-06-11 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| US11079682B1 (en) * | 2020-11-13 | 2021-08-03 | Tokyo Electron Limited | Methods for extreme ultraviolet (EUV) resist patterning development |
| WO2022125388A1 (en) | 2020-12-08 | 2022-06-16 | Lam Research Corporation | Photoresist development with organic vapor |
| US20220199406A1 (en) * | 2020-12-17 | 2022-06-23 | Applied Materials, Inc. | Vapor deposition of carbon-doped metal oxides for use as photoresists |
| US20220262625A1 (en) * | 2021-02-18 | 2022-08-18 | Applied Materials, Inc. | Chemical vapor condensation deposition of photoresist films |
| US12494368B2 (en) * | 2021-11-12 | 2025-12-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist and method |
| US20250011507A1 (en) | 2021-11-15 | 2025-01-09 | Nissan Chemical Corporation | Polycyclic aromatic hydrocarbon photocurable resin composition |
| US20250270359A1 (en) | 2022-04-22 | 2025-08-28 | Nissan Chemical Corporation | Composition for forming resist underlayer film |
| CA3257557A1 (en) | 2022-06-02 | 2023-12-07 | Mitsubishi Chemical Corporation | HIGH-PURITY ALKYLETAIN COMPOUNDS AND THEIR MANUFACTURING PROCESSES |
| TW202417971A (zh) | 2022-07-01 | 2024-05-01 | 美商蘭姆研究公司 | 用於蝕刻停止阻遏之基於金屬氧化物的光阻之循環顯影 |
| EP4568977A1 (en) | 2022-08-12 | 2025-06-18 | Gelest, Inc. | High purity tin compounds containing unsaturated substituent and method for preparation thereof |
| EP4598932A1 (en) | 2022-10-04 | 2025-08-13 | Gelest, Inc. | Cyclic azastannane and cyclic oxostannane compounds and methods for preparation thereof |
| WO2024128157A1 (ja) | 2022-12-15 | 2024-06-20 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
| KR20250121560A (ko) | 2022-12-15 | 2025-08-12 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
| KR102839122B1 (ko) | 2023-01-23 | 2025-07-28 | 닛산 가가쿠 가부시키가이샤 | 금속 산화물 레지스트 패턴 형성용 유기 수지 조성물 |
| CN120530365A (zh) | 2023-02-03 | 2025-08-22 | 日产化学株式会社 | 用于降低环境负荷的抗蚀剂下层膜形成用组合物 |
| JPWO2024166869A1 (enExample) | 2023-02-09 | 2024-08-15 | ||
| WO2024181330A1 (ja) | 2023-02-27 | 2024-09-06 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
| EP4671866A1 (en) | 2023-02-28 | 2025-12-31 | Nissan Chemical Corporation | COMPOSITION FOR FORMING A RESERVE UNDERCOAT FILM CONTAINING SILICON AND HAVING A DOUBLE CARBON-CARBON BOND |
| CN120958566A (zh) | 2023-03-17 | 2025-11-14 | 朗姆研究公司 | 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成 |
| WO2024203800A1 (ja) | 2023-03-24 | 2024-10-03 | 日産化学株式会社 | 光学回折体製造用レジスト下層膜形成用組成物 |
| US20250240895A1 (en) * | 2023-03-29 | 2025-07-24 | Boe Technology Group Co., Ltd. | Method for preparing metal mesh and method for preparing antenna |
| JPWO2024204780A1 (enExample) | 2023-03-30 | 2024-10-03 | ||
| KR20250167006A (ko) | 2023-03-31 | 2025-11-28 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
| EP4692942A1 (en) | 2023-03-31 | 2026-02-11 | Nissan Chemical Corporation | Composition for forming resist underlayer film |
| EP4711850A1 (en) | 2023-05-09 | 2026-03-18 | Nissan Chemical Corporation | Resist underlayer film-forming composition |
| CN117364235B (zh) * | 2023-12-07 | 2024-03-26 | 度亘核芯光电技术(苏州)有限公司 | 选区外延生长方法及其中使用的掩膜结构 |
Family Cites Families (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5302198A (en) | 1990-09-14 | 1994-04-12 | Ncr Corporation | Coating solution for forming glassy layers |
| US5270265A (en) * | 1992-09-01 | 1993-12-14 | Harris Corporation | Stress relief technique of removing oxide from surface of trench-patterned semiconductor-on-insulator structure |
| JP3198310B2 (ja) | 1993-01-06 | 2001-08-13 | 株式会社ニコン | 露光方法及び装置 |
| CN1268177C (zh) | 2000-06-06 | 2006-08-02 | 西蒙弗雷泽大学 | 硬掩模的形成方法 |
| US7270886B2 (en) | 2000-10-12 | 2007-09-18 | Samsung Electronics Co., Ltd. | Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same |
| US6368982B1 (en) * | 2000-11-15 | 2002-04-09 | Advanced Micro Devices, Inc. | Pattern reduction by trimming a plurality of layers of different handmask materials |
| US20020157418A1 (en) | 2001-03-19 | 2002-10-31 | Rahul Ganguli | Process for reducing or eliminating bubble defects in sol-gel silica glass |
| US7160746B2 (en) | 2001-07-27 | 2007-01-09 | Lightwave Microsystems Corporation | GeBPSG top clad for a planar lightwave circuit |
| JP2003303824A (ja) | 2002-04-12 | 2003-10-24 | Sony Corp | 半導体装置の製造方法 |
| US7037639B2 (en) * | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
| JP4932134B2 (ja) | 2003-09-16 | 2012-05-16 | 旺宏電子股▲ふん▼有限公司 | 集積回路の製造における位置合わせ精度条件を緩和する方法 |
| US7348281B2 (en) | 2003-09-19 | 2008-03-25 | Brewer Science Inc. | Method of filling structures for forming via-first dual damascene interconnects |
| KR100583957B1 (ko) * | 2003-12-03 | 2006-05-26 | 삼성전자주식회사 | 희생금속산화막을 채택하여 이중다마신 금속배선을형성하는 방법 |
| JP4839723B2 (ja) | 2005-08-10 | 2011-12-21 | 富士電機株式会社 | 保護膜形成方法およびその保護膜を備えた磁気記録媒体 |
| JP4699140B2 (ja) | 2005-08-29 | 2011-06-08 | 東京応化工業株式会社 | パターン形成方法 |
| US7572572B2 (en) * | 2005-09-01 | 2009-08-11 | Micron Technology, Inc. | Methods for forming arrays of small, closely spaced features |
| US20070166648A1 (en) * | 2006-01-17 | 2007-07-19 | International Business Machines Corporation | Integrated lithography and etch for dual damascene structures |
| US20070190762A1 (en) | 2006-02-13 | 2007-08-16 | Asml Netherlands B.V. | Device manufacturing method and computer program product |
| US7897058B2 (en) | 2006-02-13 | 2011-03-01 | Asml Netherlands B.V. | Device manufacturing method and computer program product |
| KR100790999B1 (ko) * | 2006-10-17 | 2008-01-03 | 삼성전자주식회사 | 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법 |
| US8907456B2 (en) * | 2007-03-21 | 2014-12-09 | Olambda, Inc. | Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography |
| KR20100082012A (ko) | 2007-11-16 | 2010-07-15 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 기판으로부터의 금속 하드 마스크 에칭 잔류물의 제거를 위한 조성물 |
| KR100933868B1 (ko) * | 2008-03-10 | 2009-12-24 | 주식회사 하이닉스반도체 | 마스크 패턴 형성 방법 |
| US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| JP5558327B2 (ja) * | 2010-12-10 | 2014-07-23 | 株式会社東芝 | パターン形成方法、半導体装置の製造方法およびテンプレートの製造方法 |
| KR101732936B1 (ko) * | 2011-02-14 | 2017-05-08 | 삼성전자주식회사 | 반도체 소자의 미세 패턴 형성 방법 |
| KR20120092950A (ko) | 2011-02-14 | 2012-08-22 | 에스케이하이닉스 주식회사 | 리소그래피-리소그래피-식각 공정에서의 오버레이 버니어 형성 방법 |
| US9281207B2 (en) * | 2011-02-28 | 2016-03-08 | Inpria Corporation | Solution processible hardmasks for high resolution lithography |
| US9684234B2 (en) | 2011-03-24 | 2017-06-20 | Uchicago Argonne, Llc | Sequential infiltration synthesis for enhancing multiple-patterning lithography |
| US8409965B2 (en) * | 2011-04-26 | 2013-04-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for LED with nano-patterned substrate |
| JP2012253056A (ja) * | 2011-05-31 | 2012-12-20 | Toshiba Corp | 半導体装置の製造方法 |
| TWI492298B (zh) * | 2011-08-26 | 2015-07-11 | 應用材料股份有限公司 | 雙重圖案化蝕刻製程 |
| JP6295198B2 (ja) | 2011-10-10 | 2018-03-14 | ブルーワー サイエンス アイ エヌ シー． | リソグラフ処理のためのスピンオン炭素組成物 |
| WO2013096459A1 (en) * | 2011-12-19 | 2013-06-27 | Molecular Imprints, Inc. | Fabrication of seamless large area master templates for imprint lithography |
| US8551690B2 (en) * | 2012-01-20 | 2013-10-08 | Micron Technology, Inc. | Methods of forming patterns |
| US8916337B2 (en) * | 2012-02-22 | 2014-12-23 | International Business Machines Corporation | Dual hard mask lithography process |
| US8703386B2 (en) | 2012-02-27 | 2014-04-22 | International Business Machines Corporation | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| US9249013B2 (en) * | 2012-04-16 | 2016-02-02 | Brewer Science Inc. | Silicon hardmask layer for directed self-assembly |
| JP6028384B2 (ja) * | 2012-05-07 | 2016-11-16 | 大日本印刷株式会社 | ナノインプリントリソグラフィ用テンプレートの製造方法 |
| US8647981B1 (en) * | 2012-08-31 | 2014-02-11 | Micron Technology, Inc. | Methods of forming patterns, and methods of forming integrated circuitry |
| US9679095B1 (en) | 2013-02-19 | 2017-06-13 | Mentor Graphics, A Siemens Business | Layout decomposition for multiple patterning lithography |
| US9005875B2 (en) | 2013-03-15 | 2015-04-14 | Intel Corporation | Pre-patterned hard mask for ultrafast lithographic imaging |
| JP2014239191A (ja) | 2013-06-10 | 2014-12-18 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US9176373B2 (en) | 2013-07-31 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for decomposition of a single photoresist mask pattern into 3 photoresist mask patterns |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| US9372402B2 (en) | 2013-09-13 | 2016-06-21 | The Research Foundation For The State University Of New York | Molecular organometallic resists for EUV |
| KR20160089515A (ko) | 2013-12-05 | 2016-07-27 | 도쿄엘렉트론가부시키가이샤 | 직류 중첩 동결 |
| US20150234272A1 (en) | 2014-02-14 | 2015-08-20 | Intel Corporation | Metal oxide nanoparticles and photoresist compositions |
| US9240329B2 (en) | 2014-02-23 | 2016-01-19 | Tokyo Electron Limited | Method for multiplying pattern density by crossing multiple patterned layers |
| KR102319630B1 (ko) | 2014-10-23 | 2021-10-29 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| KR102708400B1 (ko) | 2015-10-13 | 2024-09-20 | 인프리아 코포레이션 | 유기주석 옥사이드 하이드록사이드 패터닝 조성물,전구체 및 패터닝 |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| KR102394042B1 (ko) | 2016-03-11 | 2022-05-03 | 인프리아 코포레이션 | 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 |
| KR102329105B1 (ko) | 2016-08-12 | 2021-11-18 | 인프리아 코포레이션 | 금속 함유 레지스트로부터의 에지 비드 영역의 금속 잔류물 저감방법 |
| JP7487103B2 (ja) | 2017-11-20 | 2024-05-20 | インプリア・コーポレイション | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
| TW202523764A (zh) | 2018-04-05 | 2025-06-16 | 美商英培雅股份有限公司 | 包含錫化合物的輻射可圖案化塗層及其應用 |
| TWI811538B (zh) | 2019-04-12 | 2023-08-11 | 美商英培雅股份有限公司 | 有機金屬光阻顯影劑組合物及處理方法 |
-
2017
- 2017-03-10 KR KR1020187029161A patent/KR102394042B1/ko active Active
- 2017-03-10 CN CN201780016440.8A patent/CN108780739B/zh active Active
- 2017-03-10 JP JP2018547903A patent/JP6993982B2/ja active Active
- 2017-03-10 WO PCT/US2017/021769 patent/WO2017156388A1/en not_active Ceased
- 2017-03-10 TW TW106108071A patent/TWI721125B/zh active
- 2017-03-10 US US15/455,784 patent/US10649328B2/en active Active
-
2020
- 2020-04-01 US US16/837,666 patent/US11347145B2/en active Active
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