JP2019504493A - 基板の中へのドーパントの拡散の損傷のない増強 - Google Patents
基板の中へのドーパントの拡散の損傷のない増強 Download PDFInfo
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- 229910052734 helium Inorganic materials 0.000 claims abstract description 73
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- 238000002513 implantation Methods 0.000 claims abstract description 62
- 238000000137 annealing Methods 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 49
- 238000000151 deposition Methods 0.000 claims abstract description 25
- 229910052785 arsenic Inorganic materials 0.000 claims description 41
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 41
- 230000004913 activation Effects 0.000 claims description 20
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- 239000010703 silicon Substances 0.000 claims description 19
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- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
Description
Claims (15)
- 300℃以上の注入温度で、基板の表面を通って、ヘリウム種のドーズを基板の中へ注入するステップと、
ドーパントを含むドーピング層を前記基板の前記表面に堆積するステップと、
アニール温度で前記基板のアニーリングをするステップと、を有し、前記アニール温度は前記注入温度より高い、基板のドーピング方法。 - 前記注入温度は、300℃と600℃との間である、請求項1記載の方法。
- 前記ヘリウム種は、200eVから5000eVのエネルギーを含む、請求項1記載の方法。
- ヘリウム種の前記ドーズは、5×1015/cm2から1×1017/cm2のヘリウムのドーズを含む、請求項1記載の方法。
- 前記ドーピング層は、0.1nmと3nmとの間の厚さを有する、請求項1記載の方法。
- 前記ドーパントは、ヒ素、ホウ素、リン又はシリコンを含むフィルムを含む、請求項1記載の方法。
- 前記基板は、シリコン、ゲルマニウム、炭化ケイ素(SiC)、シリコン:ゲルマニウム合金、III−V族化合物半導体、又は、II−VI族化合物半導体の内の1つを含む、請求項1記載の方法。
- 前記ドーピング層を前記堆積するステップは、前記注入するステップの前に行われる、請求項1記載の方法。
- 前記基板の前記アニーリングをするステップは、高速熱アニーリングを実施するステップを有し、温度上昇の速度は50℃/sより速く、アニール温度は900℃より高く、アニール時間は10秒より短い、請求項1記載の方法。
- 前記堆積するステップ、前記注入するステップ及び前記アニーリングをするステップを有する動作は、動作の間に真空を破壊しないで、クラスターツールの中で行われ、前記方法は、さらに、
前記注入するステップ及び前記堆積するステップの前に、酸化物層を除去するステップと、
前記注入するステップの後に、及び、前記堆積するステップの後に、及び、前記アニーリングをするステップの前に、前記基板にキャッピング層を堆積するステップと、を有し、前記除去するステップ及び該堆積するステップは、さらに、動作の間に真空を破壊しないで、前記クラスターツールの中で実施される、請求項1記載の方法。 - 300℃を超える注入温度で、基板の表面を通って、ヘリウムのドーズを基板の中へ注入するステップであって、ヘリウムの前記ドーズは5×1015/cm2以上を含む、ステップと、
ドーパントを含むドーピング層を前記基板の前記表面に堆積するステップであって、前記ドーピング層は1nmより薄い厚さを有する、ステップと、
600℃より高いアニール温度で前記基板のアニーリングをするステップと、を有する、半導体基板のドーピング方法。 - 前記基板の中の前記ドーパントの活性化レベルは、前記注入温度が室温のときの、前記基板の中の前記ドーパントの2番目の活性化レベルより少なくとも5倍である、請求項11記載の方法。
- 前記注入するステップの前に、及び、前記堆積するステップの前に、酸化物層を除去するステップと、
前記アニーリングをするステップの前に、前記ドーピング層にキャッピング層を堆積するステップと、を、さらに、有する、請求項11記載の方法。 - 前記基板はフィン型トランジスタデバイスを備え、前記フィン型トランジスタデバイスの隣接するフィン構造間の間隔は10nmより小さく、前記ドーピング層の厚さは0.5nm以下である、請求項13記載の方法。
- 基板をドーピングするシステムであって、
該システムは、
基板を保管し移す移動チャンバと、
ヘリウム源に連結した高温注入チャンバであって、該高温注入チャンバは、さらに、前記移動チャンバに連結され、
ヘリウムイオンを発生するプラズマ発生器と、
300℃以上の基板の温度を生成する基板ヒーターと、を備える、高温注入チャンバと、
ドーパント源及び前記移動チャンバに連結され、ドーパントを前記基板に供給するドーパント堆積チャンバと、
前記移動チャンバに連結され、少なくとも600℃の基板の温度を生成するヒーターを有するアニーリングチャンバと、を備える、システム。
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11605770B2 (en) | 2017-04-10 | 2023-03-14 | Face International Corporation | Autonomous electrical power sources |
US11957922B2 (en) | 2016-04-09 | 2024-04-16 | Face International Corporation | Structurally embedded and inhospitable environment systems having autonomous electrical power sources |
US10079561B1 (en) | 2016-04-09 | 2018-09-18 | Face International Corporation | Energy harvesting components and devices |
US9786718B1 (en) | 2016-04-09 | 2017-10-10 | Face International Corporation | Integrated circuit components incorporating energy harvesting components/devices, and methods for fabrication, manufacture and production of integrated circuit components incorporating energy harvesting components/devices |
US10056538B1 (en) | 2016-04-09 | 2018-08-21 | Face International Corporation | Methods for fabrication, manufacture and production of energy harvesting components and devices |
US9893261B1 (en) | 2017-04-10 | 2018-02-13 | Face International Corporation | Structurally embedded and inhospitable environment systems and devices having autonomous electrical power sources |
US10985677B2 (en) | 2017-04-10 | 2021-04-20 | Face International Corporation | Systems and devices powered by autonomous electrical power sources |
US10109781B1 (en) * | 2017-04-10 | 2018-10-23 | Face International Corporation | Methods for fabrication, manufacture and production of an autonomous electrical power source |
US11980102B2 (en) | 2016-04-09 | 2024-05-07 | Face International Corporation | Systems and devices powered by autonomous electrical power sources |
US9793317B1 (en) | 2016-04-09 | 2017-10-17 | Face International Corporation | Devices and systems incorporating energy harvesting components/devices as autonomous energy sources and as energy supplementation, and methods for producing devices and systems incorporating energy harvesting components/devices |
US10032628B2 (en) * | 2016-05-02 | 2018-07-24 | Asm Ip Holding B.V. | Source/drain performance through conformal solid state doping |
DE102016112139B3 (de) * | 2016-07-01 | 2018-01-04 | Infineon Technologies Ag | Verfahren zum Reduzieren einer Verunreinigungskonzentration in einem Halbleiterkörper |
KR102550651B1 (ko) * | 2018-06-22 | 2023-07-05 | 삼성전자주식회사 | 반도체 소자 및 그의 제조 방법 |
KR102577262B1 (ko) * | 2018-08-14 | 2023-09-11 | 삼성전자주식회사 | 확산 방지 영역을 갖는 반도체 소자 |
KR102251234B1 (ko) | 2019-08-21 | 2021-05-13 | 주식회사 시노펙스 | 스트로크 거리가 증가된 포스 센서 스위치 |
US20220231144A1 (en) * | 2021-01-15 | 2022-07-21 | Institute of Microelectronics, Chinese Academy of Sciences | Semiconductor structure, method for manufacturing the same, and transistor |
US20230187222A1 (en) * | 2021-12-13 | 2023-06-15 | Applied Materials, Inc. | Adapting electrical, mechanical, and thermal properties of package substrates |
US20240153774A1 (en) * | 2022-11-04 | 2024-05-09 | Applied Materials, Inc. | Multiprocess substrate treatment for enhanced substrate doping |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766146A (ja) * | 1993-08-24 | 1995-03-10 | Toshiba Corp | 半導体装置の製造方法 |
JP2001511608A (ja) * | 1997-07-29 | 2001-08-14 | シリコン ジェネシス コーポレイション | プラズマ侵入型イオン注入を使用するクラスタツール方法及び装置 |
JP2013531372A (ja) * | 2010-06-02 | 2013-08-01 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | ダメージのない接合形成方法 |
WO2015112367A1 (en) * | 2014-01-24 | 2015-07-30 | Varian Semiconductor Equipment Associates, Inc. | Techniques for ion implantation of narrow semiconductor structures |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3718502A (en) * | 1969-10-15 | 1973-02-27 | J Gibbons | Enhancement of diffusion of atoms into a heated substrate by bombardment |
KR100527207B1 (ko) * | 1996-05-08 | 2005-11-09 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 도펀트 확산을 가로막도록 생성된 격자간 변화도를 이용한접합 깊이 및 채널 길이의 제어 |
JP2001189288A (ja) * | 1999-12-20 | 2001-07-10 | Ind Technol Res Inst | イオン注入利用の基板ダイシング法 |
US6436614B1 (en) * | 2000-10-20 | 2002-08-20 | Feng Zhou | Method for the formation of a thin optical crystal layer overlying a low dielectric constant substrate |
US20080194086A1 (en) * | 2004-06-04 | 2008-08-14 | Yuichiro Sasaki | Method of Introducing Impurity |
WO2006113442A2 (en) * | 2005-04-13 | 2006-10-26 | The Regents Of The University Of California | Wafer separation technique for the fabrication of free-standing (al, in, ga)n wafers |
WO2006116030A2 (en) * | 2005-04-21 | 2006-11-02 | Aonex Technologies, Inc. | Bonded intermediate substrate and method of making same |
JP5155536B2 (ja) * | 2006-07-28 | 2013-03-06 | 一般財団法人電力中央研究所 | SiC結晶の質を向上させる方法およびSiC半導体素子の製造方法 |
JP5528515B2 (ja) * | 2006-07-28 | 2014-06-25 | 一般財団法人電力中央研究所 | SiCバイポーラ型半導体素子 |
US8450193B2 (en) * | 2006-08-15 | 2013-05-28 | Varian Semiconductor Equipment Associates, Inc. | Techniques for temperature-controlled ion implantation |
FR2905801B1 (fr) * | 2006-09-12 | 2008-12-05 | Soitec Silicon On Insulator | Procede de transfert d'une couche a haute temperature |
WO2009034699A1 (ja) * | 2007-09-10 | 2009-03-19 | Panasonic Corporation | 半導体装置の製造方法 |
US20090162966A1 (en) * | 2007-12-21 | 2009-06-25 | The Woodside Group Pte Ltd | Structure and method of formation of a solar cell |
US8372735B2 (en) | 2008-08-14 | 2013-02-12 | Varian Semiconductor Equipment Associates, Inc. | USJ techniques with helium-treated substrates |
JP2012507855A (ja) * | 2008-10-29 | 2012-03-29 | イノヴァライト インコーポレイテッド | 多重ドープ接合を基板上に形成するための方法 |
US9685186B2 (en) * | 2009-02-27 | 2017-06-20 | Applied Materials, Inc. | HDD pattern implant system |
FR2949606B1 (fr) * | 2009-08-26 | 2011-10-28 | Commissariat Energie Atomique | Procede de detachement par fracture d'un film mince de silicium mettant en oeuvre une triple implantation |
US9076719B2 (en) * | 2013-08-21 | 2015-07-07 | The Regents Of The University Of California | Doping of a substrate via a dopant containing polymer film |
US10249498B2 (en) | 2015-06-19 | 2019-04-02 | Tokyo Electron Limited | Method for using heated substrates for process chemistry control |
-
2015
- 2015-12-22 US US14/977,849 patent/US9589802B1/en active Active
-
2016
- 2016-11-11 TW TW105136772A patent/TWI721033B/zh active
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-
2017
- 2017-01-23 US US15/412,837 patent/US9953835B2/en active Active
-
2018
- 2018-04-16 US US15/953,922 patent/US20180240670A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0766146A (ja) * | 1993-08-24 | 1995-03-10 | Toshiba Corp | 半導体装置の製造方法 |
JP2001511608A (ja) * | 1997-07-29 | 2001-08-14 | シリコン ジェネシス コーポレイション | プラズマ侵入型イオン注入を使用するクラスタツール方法及び装置 |
JP2013531372A (ja) * | 2010-06-02 | 2013-08-01 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | ダメージのない接合形成方法 |
WO2015112367A1 (en) * | 2014-01-24 | 2015-07-30 | Varian Semiconductor Equipment Associates, Inc. | Techniques for ion implantation of narrow semiconductor structures |
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