JP2019075532A5 - - Google Patents
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- JP2019075532A5 JP2019075532A5 JP2018094242A JP2018094242A JP2019075532A5 JP 2019075532 A5 JP2019075532 A5 JP 2019075532A5 JP 2018094242 A JP2018094242 A JP 2018094242A JP 2018094242 A JP2018094242 A JP 2018094242A JP 2019075532 A5 JP2019075532 A5 JP 2019075532A5
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- JP
- Japan
- Prior art keywords
- layer
- metal oxide
- conductive layer
- oxide layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910044991 metal oxide Inorganic materials 0.000 claims 19
- 150000004706 metal oxides Chemical class 0.000 claims 19
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000004973 liquid crystal related substance Substances 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022168923A JP7430763B2 (ja) | 2017-05-19 | 2022-10-21 | 半導体装置 |
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017099571 | 2017-05-19 | ||
| JP2017099571 | 2017-05-19 | ||
| JP2017133092 | 2017-07-06 | ||
| JP2017133092 | 2017-07-06 | ||
| JP2017216684 | 2017-11-09 | ||
| JP2017216684 | 2017-11-09 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022168923A Division JP7430763B2 (ja) | 2017-05-19 | 2022-10-21 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019075532A JP2019075532A (ja) | 2019-05-16 |
| JP2019075532A5 true JP2019075532A5 (enExample) | 2021-07-26 |
Family
ID=64273557
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018094242A Withdrawn JP2019075532A (ja) | 2017-05-19 | 2018-05-16 | 半導体装置、表示装置、および半導体装置の作製方法 |
| JP2022168923A Active JP7430763B2 (ja) | 2017-05-19 | 2022-10-21 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022168923A Active JP7430763B2 (ja) | 2017-05-19 | 2022-10-21 | 半導体装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11152512B2 (enExample) |
| JP (2) | JP2019075532A (enExample) |
| KR (2) | KR102696580B1 (enExample) |
| CN (2) | CN110651358A (enExample) |
| TW (2) | TWI831743B (enExample) |
| WO (1) | WO2018211351A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6790950B2 (ja) * | 2017-03-22 | 2020-11-25 | Tdk株式会社 | 状態検出装置 |
| CN110911382B (zh) * | 2018-09-14 | 2021-06-25 | 群创光电股份有限公司 | 天线装置 |
| US11139562B2 (en) * | 2018-09-14 | 2021-10-05 | Innolux Corporation | Antenna device |
| CN110190132A (zh) * | 2019-05-17 | 2019-08-30 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管器件及其制备方法 |
| US11662258B2 (en) * | 2019-05-29 | 2023-05-30 | Wiliot, LTD. | Force sensor integrated on substrate |
| US10944027B2 (en) * | 2019-06-14 | 2021-03-09 | X Display Company Technology Limited | Pixel modules with controllers and light emitters |
| KR102708310B1 (ko) * | 2019-07-05 | 2024-09-24 | 주성엔지니어링(주) | 박막 트랜지스터 |
| KR20210010333A (ko) * | 2019-07-19 | 2021-01-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| KR20210063922A (ko) * | 2019-11-25 | 2021-06-02 | 삼성전자주식회사 | 지문 센서를 포함하는 전자 장치 |
| CN111293178A (zh) * | 2020-02-21 | 2020-06-16 | 合肥鑫晟光电科技有限公司 | 一种薄膜晶体管及其制备方法 |
| US11978774B2 (en) * | 2020-10-05 | 2024-05-07 | Sandisk Technologies Llc | High voltage field effect transistor with vertical current paths and method of making the same |
| CN112735272B (zh) * | 2020-12-30 | 2022-05-17 | 武汉华星光电技术有限公司 | 显示面板及显示装置 |
| CN112782895A (zh) * | 2021-01-27 | 2021-05-11 | 武汉华星光电技术有限公司 | 显示面板及液晶显示装置 |
| JP7587792B2 (ja) * | 2021-02-25 | 2024-11-21 | 株式会社デンソー | 窒化物半導体装置の製造方法 |
| CN114566514B (zh) * | 2021-05-18 | 2025-08-12 | 友达光电股份有限公司 | 感光装置 |
| US12426277B2 (en) | 2021-07-23 | 2025-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Embedded double side heating phase change random access memory (PCRAM) device and method of making same |
| CN116113238A (zh) * | 2021-09-16 | 2023-05-12 | 联华电子股份有限公司 | 半导体存储器结构及其制作方法 |
| US11513289B1 (en) | 2021-11-24 | 2022-11-29 | Aurora Operations, Inc. | Silicon photonics device for LIDAR sensor and method for fabrication |
| US11415673B1 (en) | 2021-11-24 | 2022-08-16 | Aurora Operations, Inc. | Silicon photonics device for LIDAR sensor and method for fabrication |
| CN115050840B (zh) * | 2021-12-09 | 2025-05-13 | 友达光电股份有限公司 | 半导体装置及其制造方法 |
| KR20230089590A (ko) * | 2021-12-13 | 2023-06-21 | 삼성디스플레이 주식회사 | 표시장치 및 그 제조방법 |
| CN116184710B (zh) * | 2023-03-09 | 2024-09-27 | 厦门天马微电子有限公司 | 显示装置 |
| KR20250040803A (ko) * | 2023-09-15 | 2025-03-25 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
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| JP2003075870A (ja) * | 2001-09-06 | 2003-03-12 | Toshiba Corp | 平面表示装置およびその製造方法 |
| JP2004109857A (ja) * | 2002-09-20 | 2004-04-08 | Seiko Epson Corp | 液晶表示装置、及び電子機器 |
| JP4439260B2 (ja) * | 2003-12-26 | 2010-03-24 | 三洋電機株式会社 | 表示装置の製造方法 |
| KR101623224B1 (ko) | 2008-09-12 | 2016-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제조 방법 |
| JP5491833B2 (ja) | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8247276B2 (en) * | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
| JP2011091110A (ja) * | 2009-10-20 | 2011-05-06 | Canon Inc | 酸化物半導体素子を用いた回路及びその製造方法、並びに表示装置 |
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| WO2011135987A1 (en) * | 2010-04-28 | 2011-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR101718528B1 (ko) * | 2010-08-26 | 2017-03-22 | 삼성디스플레이 주식회사 | 다결정 규소층의 형성 방법, 상기 다결정 규소층을 포함하는 박막 트랜지스터 및 유기 발광 장치 |
| JP2012151453A (ja) * | 2010-12-28 | 2012-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の駆動方法 |
| JP5685989B2 (ja) * | 2011-02-28 | 2015-03-18 | ソニー株式会社 | 表示装置および電子機器 |
| JP6005401B2 (ja) | 2011-06-10 | 2016-10-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9112036B2 (en) | 2011-06-10 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US8847220B2 (en) * | 2011-07-15 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6013685B2 (ja) | 2011-07-22 | 2016-10-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW201322341A (zh) | 2011-11-21 | 2013-06-01 | Ind Tech Res Inst | 半導體元件以及其製造方法 |
| JP6111398B2 (ja) * | 2011-12-20 | 2017-04-12 | 株式会社Ｊｏｌｅｄ | 表示装置および電子機器 |
| JP6080563B2 (ja) * | 2012-01-23 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6142136B2 (ja) | 2012-02-28 | 2017-06-07 | 株式会社Ｊｏｌｅｄ | トランジスタの製造方法、表示装置の製造方法および電子機器の製造方法 |
| TW201338173A (zh) | 2012-02-28 | 2013-09-16 | Sony Corp | 電晶體、製造電晶體之方法、顯示裝置及電子機器 |
| KR101912406B1 (ko) | 2012-04-12 | 2019-01-07 | 삼성디스플레이 주식회사 | 평판 표시 장치용 백플레인, 상기 백플레인의 제조방법, 및 상기 백플레인을 포함하는 유기 발광 표시 장치 |
| CN107591316B (zh) | 2012-05-31 | 2021-06-08 | 株式会社半导体能源研究所 | 半导体装置 |
| KR102400509B1 (ko) * | 2012-09-13 | 2022-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP6111458B2 (ja) | 2013-03-28 | 2017-04-12 | 株式会社Ｊｏｌｅｄ | 半導体装置、表示装置および電子機器 |
| KR102049443B1 (ko) * | 2013-05-15 | 2019-11-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
| JP6490914B2 (ja) * | 2013-06-28 | 2019-03-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR102244553B1 (ko) * | 2013-08-23 | 2021-04-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 용량 소자 및 반도체 장치 |
| US9583516B2 (en) * | 2013-10-25 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP6402017B2 (ja) * | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR20220046701A (ko) * | 2013-12-27 | 2022-04-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| JP2015135896A (ja) | 2014-01-17 | 2015-07-27 | 株式会社Ｊｏｌｅｄ | 半導体装置、表示装置及び半導体装置の製造方法 |
| TWI535034B (zh) * | 2014-01-29 | 2016-05-21 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
| JP6330220B2 (ja) * | 2014-03-27 | 2018-05-30 | 株式会社Ｊｏｌｅｄ | 表示装置、電子機器および基板 |
| KR20170072889A (ko) | 2014-10-10 | 2017-06-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 촬상 장치 |
| TWI569423B (zh) * | 2014-10-15 | 2017-02-01 | 群創光電股份有限公司 | 薄膜電晶體基板與顯示器 |
| US9424890B2 (en) * | 2014-12-01 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| CN113341624A (zh) * | 2015-02-12 | 2021-09-03 | 株式会社半导体能源研究所 | 显示装置 |
| JP6135694B2 (ja) | 2015-02-20 | 2017-05-31 | トヨタ自動車株式会社 | 車載電池 |
| KR20180010205A (ko) * | 2015-05-22 | 2018-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치 |
| WO2016203354A1 (en) * | 2015-06-19 | 2016-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| JP2017041596A (ja) | 2015-08-21 | 2017-02-23 | 株式会社Ｊｏｌｅｄ | 薄膜トランジスタ、半導体装置および電子機器 |
| JP6636755B2 (ja) * | 2015-09-09 | 2020-01-29 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9852926B2 (en) * | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
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2018
- 2018-05-07 WO PCT/IB2018/053142 patent/WO2018211351A1/en not_active Ceased
- 2018-05-07 CN CN201880033195.6A patent/CN110651358A/zh active Pending
- 2018-05-07 CN CN202310860817.5A patent/CN117116946A/zh active Pending
- 2018-05-07 KR KR1020197035534A patent/KR102696580B1/ko active Active
- 2018-05-07 KR KR1020247025760A patent/KR102824388B1/ko active Active
- 2018-05-07 US US16/613,147 patent/US11152512B2/en not_active Expired - Fee Related
- 2018-05-14 TW TW107116241A patent/TWI831743B/zh active
- 2018-05-14 TW TW112130256A patent/TWI880293B/zh active
- 2018-05-16 JP JP2018094242A patent/JP2019075532A/ja not_active Withdrawn
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2021
- 2021-07-06 US US17/367,677 patent/US11705525B2/en active Active
-
2022
- 2022-10-21 JP JP2022168923A patent/JP7430763B2/ja active Active