JP2019047127A - 樹脂多層基板 - Google Patents
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- 229920005989 resin Polymers 0.000 title claims abstract description 196
- 239000011347 resin Substances 0.000 title claims abstract description 196
- 239000000758 substrate Substances 0.000 title claims abstract description 92
- 239000004020 conductor Substances 0.000 claims abstract description 178
- 239000011229 interlayer Substances 0.000 claims abstract description 129
- 239000010410 layer Substances 0.000 claims abstract description 114
- 239000000463 material Substances 0.000 claims abstract description 40
- 238000002844 melting Methods 0.000 claims abstract description 34
- 230000008018 melting Effects 0.000 claims abstract description 34
- 238000010030 laminating Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 229910000765 intermetallic Inorganic materials 0.000 claims description 6
- 229910017566 Cu-Mn Inorganic materials 0.000 claims description 3
- 229910002482 Cu–Ni Inorganic materials 0.000 claims description 3
- 229910017871 Cu—Mn Inorganic materials 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
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- 238000004519 manufacturing process Methods 0.000 description 19
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- 229910000679 solder Inorganic materials 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
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- 230000000149 penetrating effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
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- 238000004080 punching Methods 0.000 description 2
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- 239000004642 Polyimide Substances 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】樹脂多層基板102は、複数の樹脂層2を積層して一体化させることによって得られた積層体1を備える。積層体1には、複数の樹脂層2のうちの少なくとも1つを貫通し、積層体1の外に向かって直接露出するように配置された層間接続導体6が設けられている。層間接続導体6は、部品が実装されるための導体である。積層体1の一方の主表面の側を向いて、互いに離隔するように2以上の層間接続導体6が配置されている。層間接続導体6同士の間には、層間接続導体6を保持する樹脂層2の層間接続導体6が露出する側の面より高くなっている隆起部13が設けられている。層間接続導体6は、融点変化型接合材によって形成されている。2以上の層間接続導体6は、隆起部13と間隔をおいて配置されている。
【選択図】図6
Description
図1を参照して、本発明に基づく実施の形態1における樹脂多層基板について説明する。
図6を参照して、本発明に基づく実施の形態2における樹脂多層基板について説明する。本実施の形態における樹脂多層基板102は、実施の形態1で説明した樹脂多層基板101と比べて、基本的な構成は共通するが、以下の点で異なる。
図7を参照して、本発明に基づく実施の形態3における樹脂多層基板について説明する。本実施の形態における樹脂多層基板103は、実施の形態2で説明した樹脂多層基板102と比べて、基本的な構成は共通するが、以下の点で異なる。
図8を参照して、本発明に基づく実施の形態4における樹脂多層基板について説明する。本実施の形態における樹脂多層基板104は、実施の形態1で説明した樹脂多層基板101と比べて、基本的な構成は共通するが、以下の点で異なる。
これまでの実施の形態で示してきた層間接続導体6は、たとえば主表面に銅箔が形成された樹脂層2に対してレーザ加工を施すことによって樹脂層2を貫通するようにビア孔を形成し、このビア孔にペースト状の材料を充填し、加熱圧着工程において加熱および加圧を経て材料を硬化させることによって形成することができる。このビア孔はレーザ光の1ヶ所への照射で形成されるものを想定していたため、層間接続導体6は限られた面積のものとなっていた。これまでの実施の形態で用いられていた層間接続導体6を単独で取り出したところを図9に示す。層間接続導体6は、このように単純な円錐台形状のものとなっていた。
図13を参照して、本発明に基づく実施の形態6における樹脂多層基板について説明する。図12に示した樹脂多層基板105の構成の上側にさらにもう1層の樹脂層2を積層し、この樹脂層2に開口部15を設けることによって、図13に示す樹脂多層基板106を得ることができる。層間接続導体16を保持している樹脂層2は第1樹脂層21とみなすことができ、上側に載せられた樹脂層2は第2樹脂層22とみなすことができる。
図15〜図22を参照して、本発明に基づく実施の形態7における樹脂多層基板の製造方法について説明する。本実施の形態における樹脂多層基板の製造方法のフローチャートを図15に示す。
図23〜図26を参照して、本発明に基づく実施の形態8における樹脂多層基板の製造方法について説明する。本実施の形態における樹脂多層基板の製造方法も、図15に示したフローチャートに沿ったものである。
なお、今回開示した上記実施の形態はすべての点で例示であって制限的なものではない。本発明の範囲は特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更を含むものである。
Claims (4)
- 複数の樹脂層を積層して一体化させることによって得られた積層体を備え、
前記積層体には、前記複数の樹脂層のうちの少なくとも1つを貫通し、前記積層体の外に向かって直接露出するように配置された層間接続導体が設けられており、
前記層間接続導体は、部品が実装されるための導体であり、
前記積層体の一方の主表面の側を向いて、互いに離隔するように2以上の前記層間接続導体が配置されており、前記層間接続導体同士の間には、前記層間接続導体を保持する前記樹脂層の前記層間接続導体が露出する側の面より高くなっている隆起部が設けられており、
前記層間接続導体は、融点変化型接合材によって形成され、
2以上の前記層間接続導体は、前記隆起部と間隔をおいて配置されている、樹脂多層基板。 - 複数の樹脂層を積層して一体化させることによって得られた積層体を備え、
前記積層体には、前記複数の樹脂層のうちの少なくとも1つを貫通し、前記積層体の外に向かって直接露出するように配置された層間接続導体が設けられており、
前記層間接続導体は、部品が実装されるための導体であり、
前記積層体の一方の主表面の側を向いて、互いに離隔するように2以上の前記層間接続導体が配置されており、前記層間接続導体同士の間には、前記層間接続導体を保持する前記樹脂層の前記層間接続導体が露出する側の面より低くなっている凹み部が設けられており、
前記層間接続導体は、融点変化型接合材によって形成され、
2以上の前記層間接続導体は、前記凹み部と間隔をおいて配置されている、樹脂多層基板。 - 前記融点変化型接合材は、
第1金属と、前記第1金属よりも融点が高く、前記第1金属と反応して金属間化合物を生成する第2金属とからなる金属成分を含む導電性材料であって、
前記第1金属はSnまたはSnを70重量%以上含む合金であり、
前記第2金属はCu−Mn合金またはCu−Ni合金であり、
前記第1金属と前記第2金属とは、310℃以上の融点を示す金属間化合物を生成する、導電性材料である、請求項1または2に記載の樹脂多層基板。 - Snメッキされた接合面を有する部品が、前記Snメッキされた面を接合面として前記層間接続導体に接合されている、請求項1から3のいずれか1項に記載の樹脂多層基板。
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