JP2018532828A5 - - Google Patents
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- JP2018532828A5 JP2018532828A5 JP2018511737A JP2018511737A JP2018532828A5 JP 2018532828 A5 JP2018532828 A5 JP 2018532828A5 JP 2018511737 A JP2018511737 A JP 2018511737A JP 2018511737 A JP2018511737 A JP 2018511737A JP 2018532828 A5 JP2018532828 A5 JP 2018532828A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- removal rate
- acid
- rate accelerator
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000203 mixture Substances 0.000 claims 27
- 238000005498 polishing Methods 0.000 claims 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 16
- 238000000034 method Methods 0.000 claims 16
- 239000002245 particle Substances 0.000 claims 16
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000000126 substance Substances 0.000 claims 7
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims 6
- 239000003989 dielectric material Substances 0.000 claims 6
- -1 2-hydroxyphenyl Chemical group 0.000 claims 4
- 239000012736 aqueous medium Substances 0.000 claims 4
- 229940081066 picolinic acid Drugs 0.000 claims 4
- HBROZNQEVUILML-UHFFFAOYSA-N salicylhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1O HBROZNQEVUILML-UHFFFAOYSA-N 0.000 claims 4
- RRUDCFGSUDOHDG-UHFFFAOYSA-N acetohydroxamic acid Chemical group CC(O)=NO RRUDCFGSUDOHDG-UHFFFAOYSA-N 0.000 claims 2
- 229960001171 acetohydroxamic acid Drugs 0.000 claims 2
- 125000003545 alkoxy group Chemical group 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000003118 aryl group Chemical group 0.000 claims 2
- VDEUYMSGMPQMIK-UHFFFAOYSA-N benzhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1 VDEUYMSGMPQMIK-UHFFFAOYSA-N 0.000 claims 2
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 claims 2
- VGEWEGHHYWGXGG-UHFFFAOYSA-N ethyl n-hydroxycarbamate Chemical compound CCOC(=O)NO VGEWEGHHYWGXGG-UHFFFAOYSA-N 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims 2
- 125000003107 substituted aryl group Chemical group 0.000 claims 2
- DRDVJQOGFWAVLH-UHFFFAOYSA-N tert-butyl n-hydroxycarbamate Chemical compound CC(C)(C)OC(=O)NO DRDVJQOGFWAVLH-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 239000005380 borophosphosilicate glass Substances 0.000 claims 1
- 229910052755 nonmetal Inorganic materials 0.000 claims 1
- 239000005360 phosphosilicate glass Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562213955P | 2015-09-03 | 2015-09-03 | |
| US62/213,955 | 2015-09-03 | ||
| PCT/US2016/049563 WO2017040571A1 (en) | 2015-09-03 | 2016-08-31 | Methods and compositions for processing dielectric substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018532828A JP2018532828A (ja) | 2018-11-08 |
| JP2018532828A5 true JP2018532828A5 (enExample) | 2019-09-19 |
| JP6989493B2 JP6989493B2 (ja) | 2022-01-05 |
Family
ID=58188253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018511737A Active JP6989493B2 (ja) | 2015-09-03 | 2016-08-31 | 誘電体基板を加工するための方法及び組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20170066944A1 (enExample) |
| EP (1) | EP3344716A4 (enExample) |
| JP (1) | JP6989493B2 (enExample) |
| KR (1) | KR102670778B1 (enExample) |
| CN (1) | CN108026412B (enExample) |
| TW (1) | TWI605114B (enExample) |
| WO (1) | WO2017040571A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10619075B2 (en) | 2015-07-13 | 2020-04-14 | Cabot Microelectronics Corporation | Self-stopping polishing composition and method for bulk oxide planarization |
| WO2017081835A1 (ja) * | 2015-11-10 | 2017-05-18 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法 |
| JP7132942B2 (ja) * | 2017-04-17 | 2022-09-07 | シーエムシー マテリアルズ，インコーポレイティド | バルク酸化物の平坦化のための自己停止研磨組成物および方法 |
| US11053440B2 (en) * | 2018-11-15 | 2021-07-06 | Entegris, Inc. | Silicon nitride etching composition and method |
| KR102814738B1 (ko) * | 2019-08-06 | 2025-05-30 | 삼성디스플레이 주식회사 | 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치 |
| CN113004798B (zh) * | 2019-12-19 | 2024-04-12 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| KR20210079573A (ko) * | 2019-12-20 | 2021-06-30 | 주식회사 케이씨텍 | 유기막 연마용 슬러리 조성물 |
| JP7489250B2 (ja) * | 2020-07-15 | 2024-05-23 | 花王株式会社 | エッチング液 |
| JPWO2022065022A1 (enExample) * | 2020-09-24 | 2022-03-31 | ||
| CN114621684A (zh) * | 2020-12-11 | 2022-06-14 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其使用方法 |
| CN114621683A (zh) * | 2020-12-11 | 2022-06-14 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其使用方法 |
| WO2022140334A1 (en) * | 2020-12-21 | 2022-06-30 | Cmc Materials, Inc. | Self-stopping polishing composition and method for high topological selectivity |
| JP2024518576A (ja) * | 2021-05-13 | 2024-05-01 | アラカ， インコーポレイテッド | スラリー配合物を用いた炭化ケイ素（ＳｉＣ）ウェハ研磨及びプロセス |
| US12199091B2 (en) * | 2021-05-13 | 2025-01-14 | Texas Instruments Incorporated | Shallow trench isolation processing with local oxidation of silicon |
| CN117858929A (zh) * | 2021-08-25 | 2024-04-09 | Cmc材料有限责任公司 | 包括阴离子性研磨剂的cmp组合物 |
| CN115160933B (zh) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
| TWI873734B (zh) * | 2022-07-29 | 2025-02-21 | 美商聖高拜陶器塑膠公司 | 用於進行材料移除操作之組成物及方法 |
| KR20240062236A (ko) * | 2022-10-28 | 2024-05-09 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
| US20250277134A1 (en) * | 2024-03-04 | 2025-09-04 | Cmc Materials Llc | Silane modification of ceria nanoparticles in colloidally stable solutions |
| WO2025188728A1 (en) * | 2024-03-04 | 2025-09-12 | Entegris, Inc. | Silane modification of ceria nanoparticles in colloidally stable solutions |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030176151A1 (en) * | 2002-02-12 | 2003-09-18 | Applied Materials, Inc. | STI polish enhancement using fixed abrasives with amino acid additives |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
| US7955520B2 (en) * | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
| JP2012069785A (ja) * | 2010-09-24 | 2012-04-05 | Fujimi Inc | 研磨用組成物および研磨方法 |
| KR101546695B1 (ko) * | 2010-12-28 | 2015-08-25 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 지르코니아 입자를 포함하는 폴리싱 슬러리 및 폴리싱 슬러리를 사용하는 방법 |
| JP5992925B2 (ja) * | 2011-01-11 | 2016-09-14 | キャボット マイクロエレクトロニクス コーポレイション | 金属を不動態化する化学機械研磨用組成物及び方法 |
| EP2693459A4 (en) * | 2011-03-30 | 2015-04-22 | Fujimi Inc | POLISHING COMPOSITION AND POLISHING METHOD |
| KR101385043B1 (ko) * | 2011-12-30 | 2014-04-15 | 제일모직주식회사 | Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법 |
| US8778212B2 (en) * | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
| US9340706B2 (en) * | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
| EP4345142A3 (en) * | 2015-07-13 | 2024-05-29 | CMC Materials LLC | Methods and compositions for processing dielectric substrate |
-
2016
- 2016-08-31 CN CN201680051105.7A patent/CN108026412B/zh active Active
- 2016-08-31 EP EP16842849.8A patent/EP3344716A4/en not_active Withdrawn
- 2016-08-31 KR KR1020187007973A patent/KR102670778B1/ko active Active
- 2016-08-31 WO PCT/US2016/049563 patent/WO2017040571A1/en not_active Ceased
- 2016-08-31 US US15/252,567 patent/US20170066944A1/en not_active Abandoned
- 2016-08-31 JP JP2018511737A patent/JP6989493B2/ja active Active
- 2016-09-02 TW TW105128466A patent/TWI605114B/zh active
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