TWI605114B - 用於加工介電基板之方法及組合物 - Google Patents

用於加工介電基板之方法及組合物 Download PDF

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Publication number
TWI605114B
TWI605114B TW105128466A TW105128466A TWI605114B TW I605114 B TWI605114 B TW I605114B TW 105128466 A TW105128466 A TW 105128466A TW 105128466 A TW105128466 A TW 105128466A TW I605114 B TWI605114 B TW I605114B
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TW
Taiwan
Prior art keywords
composition
weight percent
ppm
polishing
abrasive particles
Prior art date
Application number
TW105128466A
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English (en)
Chinese (zh)
Other versions
TW201718817A (zh
Inventor
崔驥
越 林
史帝芬 葛倫拜
Original Assignee
美商卡博特微電子公司
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Filing date
Publication date
Application filed by 美商卡博特微電子公司 filed Critical 美商卡博特微電子公司
Publication of TW201718817A publication Critical patent/TW201718817A/zh
Application granted granted Critical
Publication of TWI605114B publication Critical patent/TWI605114B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW105128466A 2015-09-03 2016-09-02 用於加工介電基板之方法及組合物 TWI605114B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201562213955P 2015-09-03 2015-09-03

Publications (2)

Publication Number Publication Date
TW201718817A TW201718817A (zh) 2017-06-01
TWI605114B true TWI605114B (zh) 2017-11-11

Family

ID=58188253

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105128466A TWI605114B (zh) 2015-09-03 2016-09-02 用於加工介電基板之方法及組合物

Country Status (7)

Country Link
US (1) US20170066944A1 (enExample)
EP (1) EP3344716A4 (enExample)
JP (1) JP6989493B2 (enExample)
KR (1) KR102670778B1 (enExample)
CN (1) CN108026412B (enExample)
TW (1) TWI605114B (enExample)
WO (1) WO2017040571A1 (enExample)

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US10619075B2 (en) 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
WO2017081835A1 (ja) * 2015-11-10 2017-05-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法
CN113637412A (zh) * 2017-04-17 2021-11-12 嘉柏微电子材料股份公司 自停止性抛光组合物及用于块状氧化物平坦化的方法
CN112996881A (zh) * 2018-11-15 2021-06-18 恩特格里斯公司 氮化硅蚀刻组合物及方法
KR102814738B1 (ko) * 2019-08-06 2025-05-30 삼성디스플레이 주식회사 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
KR20210079573A (ko) * 2019-12-20 2021-06-30 주식회사 케이씨텍 유기막 연마용 슬러리 조성물
JP7489250B2 (ja) * 2020-07-15 2024-05-23 花王株式会社 エッチング液
JPWO2022065022A1 (enExample) * 2020-09-24 2022-03-31
CN114621684A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
US12116502B2 (en) * 2020-12-21 2024-10-15 Cmc Materials Llc Self-stopping polishing composition and method for high topological selectivity
US12199091B2 (en) * 2021-05-13 2025-01-14 Texas Instruments Incorporated Shallow trench isolation processing with local oxidation of silicon
CN117858929A (zh) * 2021-08-25 2024-04-09 Cmc材料有限责任公司 包括阴离子性研磨剂的cmp组合物
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法
TWI873734B (zh) * 2022-07-29 2025-02-21 美商聖高拜陶器塑膠公司 用於進行材料移除操作之組成物及方法
KR20240062236A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
WO2025188728A1 (en) * 2024-03-04 2025-09-12 Entegris, Inc. Silane modification of ceria nanoparticles in colloidally stable solutions
US20250277134A1 (en) * 2024-03-04 2025-09-04 Cmc Materials Llc Silane modification of ceria nanoparticles in colloidally stable solutions

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US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法
US9120200B2 (en) * 2010-12-28 2015-09-01 Saint-Gobain Ceramics & Plastics, Inc. Polishing slurry including zirconia particles and a method of using the polishing slurry
KR102077618B1 (ko) * 2011-01-11 2020-02-14 캐보트 마이크로일렉트로닉스 코포레이션 금속-패시베이션화 ｃｍｐ 조성물 및 방법
KR20140019403A (ko) * 2011-03-30 2014-02-14 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 연마 방법
KR101385043B1 (ko) * 2011-12-30 2014-04-15 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
EP3323142B1 (en) * 2015-07-13 2024-08-28 CMC Materials LLC Methods and compositions for processing dielectric substrate

Also Published As

Publication number Publication date
CN108026412A (zh) 2018-05-11
US20170066944A1 (en) 2017-03-09
KR20180038051A (ko) 2018-04-13
EP3344716A1 (en) 2018-07-11
TW201718817A (zh) 2017-06-01
EP3344716A4 (en) 2019-04-10
JP2018532828A (ja) 2018-11-08
KR102670778B1 (ko) 2024-05-29
WO2017040571A1 (en) 2017-03-09
CN108026412B (zh) 2021-08-31
JP6989493B2 (ja) 2022-01-05

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