KR102670778B1 - 유전체 기판 처리를 위한 방법 및 조성물 - Google Patents

유전체 기판 처리를 위한 방법 및 조성물 Download PDF

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KR102670778B1
KR102670778B1 KR1020187007973A KR20187007973A KR102670778B1 KR 102670778 B1 KR102670778 B1 KR 102670778B1 KR 1020187007973 A KR1020187007973 A KR 1020187007973A KR 20187007973 A KR20187007973 A KR 20187007973A KR 102670778 B1 KR102670778 B1 KR 102670778B1
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South Korea
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composition
polishing
ppm
dielectric
abrasive particles
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Korean (ko)
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KR20180038051A (ko
Inventor
지 쿠이
비에트 램
스티븐 그럼빈
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씨엠씨 머티리얼즈 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H01L21/30625—
    • H01L21/3212—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020187007973A 2015-09-03 2016-08-31 유전체 기판 처리를 위한 방법 및 조성물 Active KR102670778B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562213955P 2015-09-03 2015-09-03
US62/213,955 2015-09-03
PCT/US2016/049563 WO2017040571A1 (en) 2015-09-03 2016-08-31 Methods and compositions for processing dielectric substrate

Publications (2)

Publication Number Publication Date
KR20180038051A KR20180038051A (ko) 2018-04-13
KR102670778B1 true KR102670778B1 (ko) 2024-05-29

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KR1020187007973A Active KR102670778B1 (ko) 2015-09-03 2016-08-31 유전체 기판 처리를 위한 방법 및 조성물

Country Status (7)

Country Link
US (1) US20170066944A1 (enExample)
EP (1) EP3344716A4 (enExample)
JP (1) JP6989493B2 (enExample)
KR (1) KR102670778B1 (enExample)
CN (1) CN108026412B (enExample)
TW (1) TWI605114B (enExample)
WO (1) WO2017040571A1 (enExample)

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US10619075B2 (en) 2015-07-13 2020-04-14 Cabot Microelectronics Corporation Self-stopping polishing composition and method for bulk oxide planarization
WO2017081835A1 (ja) * 2015-11-10 2017-05-18 信越化学工業株式会社 合成石英ガラス基板用研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法
TWI663231B (zh) * 2017-04-17 2019-06-21 Cabot Microelectronics Corporation 自停止性拋光組合物及用於大塊氧化物平坦化之方法
KR102628802B1 (ko) * 2018-11-15 2024-01-24 엔테그리스, 아이엔씨. 질화규소 에칭 조성물 및 방법
KR102814738B1 (ko) * 2019-08-06 2025-05-30 삼성디스플레이 주식회사 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치
CN113004798B (zh) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
KR20210079573A (ko) 2019-12-20 2021-06-30 주식회사 케이씨텍 유기막 연마용 슬러리 조성물
JP7489250B2 (ja) * 2020-07-15 2024-05-23 花王株式会社 エッチング液
JPWO2022065022A1 (enExample) * 2020-09-24 2022-03-31
CN114621684A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
CN114621683A (zh) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法
TWI826878B (zh) * 2020-12-21 2023-12-21 美商Ｃｍｃ材料有限責任公司 用於高拓樸選擇性的自停止性拋光組合物與方法
EP4305118A4 (en) * 2021-05-13 2025-05-28 Araca, Inc. SILICON CARBIDE (SIC) WAFER POLISHING USING SLURRY FORMULATION AND PROCESS
US12199091B2 (en) * 2021-05-13 2025-01-14 Texas Instruments Incorporated Shallow trench isolation processing with local oxidation of silicon
EP4392498A4 (en) * 2021-08-25 2025-07-16 Cmc Mat Llc COMPOSITION FOR CMP COMPRISING AN ANIONIC ABRASIVE
CN115160933B (zh) * 2022-07-27 2023-11-28 河北工业大学 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法
TWI873734B (zh) * 2022-07-29 2025-02-21 美商聖高拜陶器塑膠公司 用於進行材料移除操作之組成物及方法
KR20240062236A (ko) * 2022-10-28 2024-05-09 솔브레인 주식회사 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법
US20250277134A1 (en) * 2024-03-04 2025-09-04 Cmc Materials Llc Silane modification of ceria nanoparticles in colloidally stable solutions
WO2025188728A1 (en) * 2024-03-04 2025-09-12 Entegris, Inc. Silane modification of ceria nanoparticles in colloidally stable solutions

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JP2006520530A (ja) * 2003-02-03 2006-09-07 キャボット マイクロエレクトロニクス コーポレイション ケイ素含有誘電体の研磨方法
JP2012069785A (ja) 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

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US20030176151A1 (en) * 2002-02-12 2003-09-18 Applied Materials, Inc. STI polish enhancement using fixed abrasives with amino acid additives
US20050279733A1 (en) * 2004-06-18 2005-12-22 Cabot Microelectronics Corporation CMP composition for improved oxide removal rate
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
WO2012092361A2 (en) * 2010-12-28 2012-07-05 Saint-Gobain Ceramics & Plastics, Inc. Polishing slurry including zirconia particles and a method of using the polishing slurry
SG191909A1 (en) * 2011-01-11 2013-08-30 Cabot Microelectronics Corp Metal-passivating cmp compositions and methods
CN103562337A (zh) * 2011-03-30 2014-02-05 福吉米株式会社 研磨用组合物和研磨方法
KR101385043B1 (ko) * 2011-12-30 2014-04-15 제일모직주식회사 Ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
WO2017011451A1 (en) * 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2006520530A (ja) * 2003-02-03 2006-09-07 キャボット マイクロエレクトロニクス コーポレイション ケイ素含有誘電体の研磨方法
JP2012069785A (ja) 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

Also Published As

Publication number Publication date
CN108026412A (zh) 2018-05-11
EP3344716A4 (en) 2019-04-10
KR20180038051A (ko) 2018-04-13
JP2018532828A (ja) 2018-11-08
US20170066944A1 (en) 2017-03-09
TW201718817A (zh) 2017-06-01
CN108026412B (zh) 2021-08-31
JP6989493B2 (ja) 2022-01-05
TWI605114B (zh) 2017-11-11
EP3344716A1 (en) 2018-07-11
WO2017040571A1 (en) 2017-03-09

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