JP6989493B2 - 誘電体基板を加工するための方法及び組成物 - Google Patents
誘電体基板を加工するための方法及び組成物 Download PDFInfo
- Publication number
- JP6989493B2 JP6989493B2 JP2018511737A JP2018511737A JP6989493B2 JP 6989493 B2 JP6989493 B2 JP 6989493B2 JP 2018511737 A JP2018511737 A JP 2018511737A JP 2018511737 A JP2018511737 A JP 2018511737A JP 6989493 B2 JP6989493 B2 JP 6989493B2
- Authority
- JP
- Japan
- Prior art keywords
- particles
- weight percent
- ppm
- composition
- polishing composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H10P52/402—
-
- H10P52/403—
-
- H10P95/062—
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562213955P | 2015-09-03 | 2015-09-03 | |
| US62/213,955 | 2015-09-03 | ||
| PCT/US2016/049563 WO2017040571A1 (en) | 2015-09-03 | 2016-08-31 | Methods and compositions for processing dielectric substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018532828A JP2018532828A (ja) | 2018-11-08 |
| JP2018532828A5 JP2018532828A5 (enExample) | 2019-09-19 |
| JP6989493B2 true JP6989493B2 (ja) | 2022-01-05 |
Family
ID=58188253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018511737A Active JP6989493B2 (ja) | 2015-09-03 | 2016-08-31 | 誘電体基板を加工するための方法及び組成物 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20170066944A1 (enExample) |
| EP (1) | EP3344716A4 (enExample) |
| JP (1) | JP6989493B2 (enExample) |
| KR (1) | KR102670778B1 (enExample) |
| CN (1) | CN108026412B (enExample) |
| TW (1) | TWI605114B (enExample) |
| WO (1) | WO2017040571A1 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10619075B2 (en) | 2015-07-13 | 2020-04-14 | Cabot Microelectronics Corporation | Self-stopping polishing composition and method for bulk oxide planarization |
| JP6646062B2 (ja) * | 2015-11-10 | 2020-02-14 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及びその製造方法、並びに合成石英ガラス基板の研磨方法 |
| TWI663231B (zh) * | 2017-04-17 | 2019-06-21 | Cabot Microelectronics Corporation | 自停止性拋光組合物及用於大塊氧化物平坦化之方法 |
| KR102628802B1 (ko) * | 2018-11-15 | 2024-01-24 | 엔테그리스, 아이엔씨. | 질화규소 에칭 조성물 및 방법 |
| KR102814738B1 (ko) * | 2019-08-06 | 2025-05-30 | 삼성디스플레이 주식회사 | 연마 슬러리, 이를 이용한 표시 장치의 제조방법 및 표시 장치 |
| CN113004798B (zh) * | 2019-12-19 | 2024-04-12 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
| KR20210079573A (ko) * | 2019-12-20 | 2021-06-30 | 주식회사 케이씨텍 | 유기막 연마용 슬러리 조성물 |
| JP7489250B2 (ja) * | 2020-07-15 | 2024-05-23 | 花王株式会社 | エッチング液 |
| JPWO2022065022A1 (enExample) * | 2020-09-24 | 2022-03-31 | ||
| CN114621684A (zh) * | 2020-12-11 | 2022-06-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其使用方法 |
| CN114621683A (zh) * | 2020-12-11 | 2022-06-14 | 安集微电子(上海)有限公司 | 一种化学机械抛光液及其使用方法 |
| CN117120563A (zh) * | 2020-12-21 | 2023-11-24 | Cmc材料有限责任公司 | 用于高形貌选择性的自停止性抛光组合物与方法 |
| US12199091B2 (en) * | 2021-05-13 | 2025-01-14 | Texas Instruments Incorporated | Shallow trench isolation processing with local oxidation of silicon |
| WO2022240842A1 (en) * | 2021-05-13 | 2022-11-17 | Araca, Inc. | Silicon carbide (sic) wafer polishing with slurry formulation and process |
| KR20240051190A (ko) * | 2021-08-25 | 2024-04-19 | 씨엠씨 머티리얼즈 엘엘씨 | 음이온성 연마제를 포함하는 cmp 조성물 |
| CN115160933B (zh) * | 2022-07-27 | 2023-11-28 | 河北工业大学 | 一种用于钴互连集成电路钴cmp的碱性抛光液及其制备方法 |
| TWI873734B (zh) * | 2022-07-29 | 2025-02-21 | 美商聖高拜陶器塑膠公司 | 用於進行材料移除操作之組成物及方法 |
| KR20240062236A (ko) * | 2022-10-28 | 2024-05-09 | 솔브레인 주식회사 | 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
| US20250277134A1 (en) * | 2024-03-04 | 2025-09-04 | Cmc Materials Llc | Silane modification of ceria nanoparticles in colloidally stable solutions |
| WO2025188728A1 (en) * | 2024-03-04 | 2025-09-12 | Entegris, Inc. | Silane modification of ceria nanoparticles in colloidally stable solutions |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030176151A1 (en) * | 2002-02-12 | 2003-09-18 | Applied Materials, Inc. | STI polish enhancement using fixed abrasives with amino acid additives |
| US7071105B2 (en) * | 2003-02-03 | 2006-07-04 | Cabot Microelectronics Corporation | Method of polishing a silicon-containing dielectric |
| US20050279733A1 (en) * | 2004-06-18 | 2005-12-22 | Cabot Microelectronics Corporation | CMP composition for improved oxide removal rate |
| US7955520B2 (en) * | 2007-11-27 | 2011-06-07 | Cabot Microelectronics Corporation | Copper-passivating CMP compositions and methods |
| US8247327B2 (en) * | 2008-07-30 | 2012-08-21 | Cabot Microelectronics Corporation | Methods and compositions for polishing silicon-containing substrates |
| JP2012069785A (ja) | 2010-09-24 | 2012-04-05 | Fujimi Inc | 研磨用組成物および研磨方法 |
| KR101546695B1 (ko) * | 2010-12-28 | 2015-08-25 | 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 | 지르코니아 입자를 포함하는 폴리싱 슬러리 및 폴리싱 슬러리를 사용하는 방법 |
| EP2663604B1 (en) * | 2011-01-11 | 2020-07-01 | Cabot Microelectronics Corporation | Metal-passivating cmp compositions and methods |
| EP2693459A4 (en) * | 2011-03-30 | 2015-04-22 | Fujimi Inc | POLISHING COMPOSITION AND POLISHING METHOD |
| KR101385043B1 (ko) * | 2011-12-30 | 2014-04-15 | 제일모직주식회사 | Cmp 슬러리 조성물 및 이를 이용한 연마 방법 |
| US8778212B2 (en) * | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
| US9340706B2 (en) * | 2013-10-10 | 2016-05-17 | Cabot Microelectronics Corporation | Mixed abrasive polishing compositions |
| WO2017011451A1 (en) * | 2015-07-13 | 2017-01-19 | Cabot Microelectronics Corporation | Methods and compositions for processing dielectric substrate |
-
2016
- 2016-08-31 WO PCT/US2016/049563 patent/WO2017040571A1/en not_active Ceased
- 2016-08-31 JP JP2018511737A patent/JP6989493B2/ja active Active
- 2016-08-31 KR KR1020187007973A patent/KR102670778B1/ko active Active
- 2016-08-31 US US15/252,567 patent/US20170066944A1/en not_active Abandoned
- 2016-08-31 EP EP16842849.8A patent/EP3344716A4/en not_active Withdrawn
- 2016-08-31 CN CN201680051105.7A patent/CN108026412B/zh active Active
- 2016-09-02 TW TW105128466A patent/TWI605114B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN108026412B (zh) | 2021-08-31 |
| TWI605114B (zh) | 2017-11-11 |
| KR102670778B1 (ko) | 2024-05-29 |
| CN108026412A (zh) | 2018-05-11 |
| TW201718817A (zh) | 2017-06-01 |
| KR20180038051A (ko) | 2018-04-13 |
| WO2017040571A1 (en) | 2017-03-09 |
| US20170066944A1 (en) | 2017-03-09 |
| EP3344716A4 (en) | 2019-04-10 |
| JP2018532828A (ja) | 2018-11-08 |
| EP3344716A1 (en) | 2018-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6989493B2 (ja) | 誘電体基板を加工するための方法及び組成物 | |
| JP6879995B2 (ja) | 誘電体基板を加工するための方法及び組成物 | |
| KR102650942B1 (ko) | 세리아 연마제를 함유하는 연마 조성물 | |
| TWI580768B (zh) | 含有氧化鈰粒子之拋光組合物及使用方法 | |
| EP3397710B1 (en) | Cmp processing composition comprising alkylamine and cyclodextrin |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190806 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190806 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200520 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200623 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200917 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210302 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210528 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211102 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211202 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6989493 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |