EP3612608A4 - Self-stopping polishing composition and method for bulk oxide planarization - Google Patents

Self-stopping polishing composition and method for bulk oxide planarization Download PDF

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Publication number
EP3612608A4
EP3612608A4 EP18788475.4A EP18788475A EP3612608A4 EP 3612608 A4 EP3612608 A4 EP 3612608A4 EP 18788475 A EP18788475 A EP 18788475A EP 3612608 A4 EP3612608 A4 EP 3612608A4
Authority
EP
European Patent Office
Prior art keywords
self
polishing composition
bulk oxide
stopping polishing
oxide planarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18788475.4A
Other languages
German (de)
French (fr)
Other versions
EP3612608A1 (en
Inventor
Alexander W. Hains
Juyeon Chang
Tina C. Li
Viet LAM
Ji Cui
Sarah Brosnan
Chul Woo Nam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of EP3612608A1 publication Critical patent/EP3612608A1/en
Publication of EP3612608A4 publication Critical patent/EP3612608A4/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
EP18788475.4A 2017-04-17 2018-03-23 Self-stopping polishing composition and method for bulk oxide planarization Pending EP3612608A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762486219P 2017-04-17 2017-04-17
PCT/US2018/024067 WO2018194792A1 (en) 2017-04-17 2018-03-23 Self-stopping polishing composition and method for bulk oxide planarization

Publications (2)

Publication Number Publication Date
EP3612608A1 EP3612608A1 (en) 2020-02-26
EP3612608A4 true EP3612608A4 (en) 2021-01-20

Family

ID=63856438

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18788475.4A Pending EP3612608A4 (en) 2017-04-17 2018-03-23 Self-stopping polishing composition and method for bulk oxide planarization

Country Status (6)

Country Link
EP (1) EP3612608A4 (en)
JP (1) JP7132942B2 (en)
KR (1) KR102671229B1 (en)
CN (2) CN110520493B (en)
TW (1) TWI663231B (en)
WO (1) WO2018194792A1 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7220522B2 (en) * 2018-05-24 2023-02-10 株式会社バイコウスキージャパン Abrasive grains, manufacturing method thereof, polishing slurry containing the same, and polishing method using the same
EP4048745A4 (en) 2019-10-22 2023-12-06 CMC Materials, Inc. Composition and method for dielectric cmp
KR20220085803A (en) * 2019-10-22 2022-06-22 씨엠씨 머티리얼즈, 인코포레이티드 Self-stop abrasive compositions and methods
US20210115300A1 (en) 2019-10-22 2021-04-22 Cmc Materials, Inc. Composition and method for silicon oxide and carbon doped silicon oxide cmp
TWI767355B (en) * 2019-10-24 2022-06-11 美商慧盛材料美國責任有限公司 High oxide removal rates shallow trench isolation chemical mechanical planarization compositions, system and method
CN113004798B (en) * 2019-12-19 2024-04-12 安集微电子（上海）有限公司 Chemical mechanical polishing solution
CN114621683A (en) * 2020-12-11 2022-06-14 安集微电子（上海）有限公司 Chemical mechanical polishing solution and use method thereof
JP2024500162A (en) * 2020-12-21 2024-01-04 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー Self-terminating polishing compositions and methods for high topological selectivity
WO2023013059A1 (en) * 2021-08-06 2023-02-09 昭和電工マテリアルズ株式会社 Cmp polishing liquid, cmp polishing liquid set, and polishing method
US20230242791A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon
CN115160933B (en) * 2022-07-27 2023-11-28 河北工业大学 Alkaline polishing solution for cobalt CMP of cobalt interconnection integrated circuit and preparation method thereof
WO2024111032A1 (en) * 2022-11-21 2024-05-30 株式会社レゾナック Cmp polishing liquid, cmp polishing liquid set, and polishing method
WO2024161603A1 (en) * 2023-02-02 2024-08-08 株式会社レゾナック Polishing liquid, polishing liquid set, polishing method, component production method, and semiconductor component production method
WO2024161602A1 (en) * 2023-02-02 2024-08-08 株式会社レゾナック Polishing liquid, polishing liquid set, polishing method, component manufacturing method, and semiconductor component manufacturing method
WO2024161614A1 (en) * 2023-02-02 2024-08-08 株式会社レゾナック Polishing liquid, polishing method, component production method, and semiconductor component production method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140085265A (en) * 2012-12-27 2014-07-07 제일모직주식회사 Cmp slurry composition and polishing method using the same
WO2017011451A1 (en) * 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

Family Cites Families (19)

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US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060096179A1 (en) * 2004-11-05 2006-05-11 Cabot Microelectronics Corporation CMP composition containing surface-modified abrasive particles
US20110045741A1 (en) * 2005-04-28 2011-02-24 Techno Semichem Co., Ltd. Auto-Stopping Abrasive Composition for Polishing High Step Height Oxide Layer
KR100661273B1 (en) * 2005-04-28 2006-12-26 테크노세미켐 주식회사 Abrasive composition for polishing of wafer
JP2009094233A (en) 2007-10-05 2009-04-30 Showa Denko Kk Polishing composition for semiconductor substrate
KR101603361B1 (en) * 2008-09-12 2016-03-14 페로 코포레이션 Chemical-mechanical polishing compositions and methods of making and using the same
TWI472601B (en) * 2009-12-31 2015-02-11 Cheil Ind Inc Chemical mechanical polishing slurry compositions and polishing method using the same
KR101894712B1 (en) * 2010-09-08 2018-09-04 바스프 에스이 Process for chemically mechanically polishing substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films
JP6222907B2 (en) 2012-09-06 2017-11-01 株式会社フジミインコーポレーテッド Polishing composition
US20160122696A1 (en) * 2013-05-17 2016-05-05 Advanced Technology Materials, Inc. Compositions and methods for removing ceria particles from a surface
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9434859B2 (en) * 2013-09-24 2016-09-06 Cabot Microelectronics Corporation Chemical-mechanical planarization of polymer films
US9340706B2 (en) * 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
KR101524624B1 (en) * 2013-11-18 2015-06-03 주식회사 케이씨텍 Additive composition of high aspect ratio polishing slurry and high aspect ratio polishing slurry composition comprising the same
US9735030B2 (en) * 2014-09-05 2017-08-15 Fujifilm Planar Solutions, LLC Polishing compositions and methods for polishing cobalt films
KR102426915B1 (en) * 2014-12-24 2022-08-02 솔브레인 주식회사 Chemical mechanical polishing composition, chemical mechanical polishing method for a low-k dielectric film and method of preparing semiconductor device
US9758697B2 (en) * 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

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Publication number Priority date Publication date Assignee Title
KR20140085265A (en) * 2012-12-27 2014-07-07 제일모직주식회사 Cmp slurry composition and polishing method using the same
WO2017011451A1 (en) * 2015-07-13 2017-01-19 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2018194792A1 *

Also Published As

Publication number Publication date
KR102671229B1 (en) 2024-06-03
CN110520493B (en) 2022-11-22
CN113637412A (en) 2021-11-12
TW201839077A (en) 2018-11-01
JP7132942B2 (en) 2022-09-07
TWI663231B (en) 2019-06-21
CN110520493A (en) 2019-11-29
WO2018194792A1 (en) 2018-10-25
KR20190132537A (en) 2019-11-27
JP2020517117A (en) 2020-06-11
EP3612608A1 (en) 2020-02-26

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