JP2016531429A - 酸化ケイ素、窒化ケイ素及びポリシリコン材料のcmp用組成物及び方法 - Google Patents
酸化ケイ素、窒化ケイ素及びポリシリコン材料のcmp用組成物及び方法 Download PDFInfo
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- JP2016531429A JP2016531429A JP2016529804A JP2016529804A JP2016531429A JP 2016531429 A JP2016531429 A JP 2016531429A JP 2016529804 A JP2016529804 A JP 2016529804A JP 2016529804 A JP2016529804 A JP 2016529804A JP 2016531429 A JP2016531429 A JP 2016531429A
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- cationic polymer
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- 229960002429 proline Drugs 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Abstract
Description
この実施例は、セリア系CMP研磨組成物における、酸化物、窒化物、及びポリシリコンの除去速度に及ぼす、各種陽イオン性ポリマーの効果を例示する。
この実施例は、四級メタクリロイルオキシアルキルアンモニウムポリマーを含むセリア系CMP研磨組成物における、酸化物、窒化物、及びポリシリコンの除去速度に及ぼす、添加された塩、及び陽イオン性ポリマー濃度の効果を例示する。
Claims (22)
- 二酸化ケイ素、窒化ケイ素、及びポリシリコンを含む基板を研磨する化学的機械的研磨(CMP)方法であって、CMP組成物を用いて前記基板面を摩耗させて、少なくとも幾分かの二酸化ケイ素、窒化ケイ素、及びポリシリコンを前記基板から除去することを含み、前記CMP組成物は、3〜9.5のpHを有し陽イオン性ポリマーを含有する水性キャリヤー中に懸濁させた、微粒子状セリア研磨剤を含み、前記陽イオン性ポリマーは、四級メタクリロイルオキシアルキルアンモニウムポリマーからなり、前記セリア研磨剤は、前記CMP組成物中に、0.1〜2重量パーセント(重量%)の濃度で存在し、前記陽イオン性ポリマーは、前記CMP組成物中に、20〜200パーツ・パー・ミリオン(ppm)の濃度で存在する、方法。
- 前記微粒子状セリア研磨剤が、コロイド状セリアを含む、請求項1に記載の方法。
- 前記微粒子状セリア研磨剤が、10〜200の平均粒子サイズを有する、請求項1に記載の方法。
- 前記水性キャリヤーがさらに、水溶性塩を含有する、請求項1に記載の方法。
- 前記水溶性塩が、硝酸アンモニウムを含む、請求項1に記載の方法。
- 前記陽イオン性ポリマーが、ハロゲン化物イオン、硝酸イオン、及びメチル硫酸イオンからなる群から選択される1つ又は複数の対イオンを含む、請求項1に記載の方法。
- 前記摩耗が、CMP研磨装置において研磨パッドと連動して実行される、請求項1に記載の方法。
- pHが3〜5である、請求項1に記載の方法。
- 前記陽イオン性ポリマーが、ポリ(2−メタクリロイルオキシエチルトリメチルアンモニウム・クロリド)、ポリ(2−ヒドロキシ−3−メタクリルオキシプロピルトリメチルアンモニウム・クロリド)、及びポリ(3−クロロ−2−ヒドロキシプロピル−2−メタクリルオキシエチルジメチルアンモニウム・クロリド)からなる群から選択される少なくとも1つのポリマーからなる、請求項1に記載の方法。
- 二酸化ケイ素、窒化ケイ素、ポリシリコン、又はそれらの組み合わせを含む基板を研磨するのに好適な化学的機械的研磨(CMP)組成物であって、3〜9.5のpHを有し陽イオン性ポリマーを含有する水性キャリヤー中に懸濁させた、微粒子状セリア研磨剤を含み、前記陽イオン性ポリマーが、四級メタクリロイルオキシアルキルアンモニウムポリマーからなる、組成物。
- 前記水性キャリヤーがさらに、水溶性塩を含有する、請求項10に記載のCMP組成物。
- 前記水溶性塩が、硝酸アンモニウムを含む、請求項10に記載のCMP組成物。
- 前記陽イオン性ポリマーが、ハロゲン化物イオン、硝酸イオン、及びメチル硫酸イオンからなる群から選択される1つ又は複数の対イオンを含む、請求項10に記載のCMP組成物。
- 前記微粒子状セリア研磨剤が、前記組成物中に、0.1〜4重量%の濃度で存在する、請求項10に記載のCMP組成物。
- 前記微粒子状セリア研磨剤が、前記組成物中に、1.2〜2重量%の濃度で存在する、請求項10に記載のCMP組成物。
- 前記陽イオン性ポリマーが、前記組成物中に、20〜800ppmの濃度で存在する、請求項10に記載のCMP組成物。
- 前記陽イオン性ポリマーが、前記組成物中に、20〜200ppmの濃度で存在する、請求項10に記載のCMP組成物。
- pHが3〜5である、請求項10に記載のCMP組成物。
- 前記陽イオン性ポリマーが、ポリ(2−メタクリロイルオキシエチルトリメチルアンモニウム・クロリド)、ポリ(2−ヒドロキシ−3−メタクリルオキシプロピルトリメチルアンモニウム・クロリド)、及びポリ(3−クロロ−2−ヒドロキシプロピル−2−メタクリルオキシエチルジメチルアンモニウム・クロリド)からなる群から選択される少なくとも1つのポリマーからなる、請求項10に記載のCMP組成物。
- 二酸化ケイ素、窒化ケイ素、ポリシリコン、又はそれらの組み合わせを含む基板を研磨するのに好適な化学的機械的研磨(CMP)組成物であって、3〜5のpHを有し150〜200ppmの陽イオン性ポリマーを含有する水性キャリヤー中に懸濁させた、1.2〜2重量%の微粒子状コロイド状セリア研磨剤を含み、前記陽イオン性ポリマーが、ポリ(2−メタクリロイルオキシエチルトリメチルアンモニウム・クロリド)からなる、組成物。
- 前記組成物がさらに、50〜2000ppmの水溶性塩を含む、請求項20に記載のCMP組成物。
- 前記水溶性塩が、硝酸アンモニウムを含む、請求項21に記載のCMP組成物。
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US13/947,449 US9303187B2 (en) | 2013-07-22 | 2013-07-22 | Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials |
PCT/US2014/047365 WO2015013162A1 (en) | 2013-07-22 | 2014-07-21 | Compositions and methods for cmp of silicon oxide, silicon nitride, and polysilicon materials |
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CN105393337A (zh) | 2016-03-09 |
JP6457511B2 (ja) | 2019-01-23 |
WO2015013162A1 (en) | 2015-01-29 |
EP3025368A4 (en) | 2017-02-22 |
EP3025368B1 (en) | 2021-04-14 |
KR102253294B1 (ko) | 2021-05-20 |
TWI537370B (zh) | 2016-06-11 |
CN110238705A (zh) | 2019-09-17 |
TW201504415A (zh) | 2015-02-01 |
US20150024595A1 (en) | 2015-01-22 |
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US9303187B2 (en) | 2016-04-05 |
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