JP2018528454A5 - - Google Patents

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Publication number
JP2018528454A5
JP2018528454A5 JP2017568351A JP2017568351A JP2018528454A5 JP 2018528454 A5 JP2018528454 A5 JP 2018528454A5 JP 2017568351 A JP2017568351 A JP 2017568351A JP 2017568351 A JP2017568351 A JP 2017568351A JP 2018528454 A5 JP2018528454 A5 JP 2018528454A5
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JP
Japan
Prior art keywords
particles
substrate
layer
metal
functional layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2017568351A
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English (en)
Japanese (ja)
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JP2018528454A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/CA2016/050769 external-priority patent/WO2017004704A1/en
Publication of JP2018528454A publication Critical patent/JP2018528454A/ja
Publication of JP2018528454A5 publication Critical patent/JP2018528454A5/ja
Ceased legal-status Critical Current

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JP2017568351A 2015-07-03 2016-06-30 金属ナノ粒子の光焼結に基づく自己整合金属パターニング Ceased JP2018528454A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562188553P 2015-07-03 2015-07-03
US62/188,553 2015-07-03
PCT/CA2016/050769 WO2017004704A1 (en) 2015-07-03 2016-06-30 Self-aligning metal patterning based on photonic sintering of metal nanoparticles

Publications (2)

Publication Number Publication Date
JP2018528454A JP2018528454A (ja) 2018-09-27
JP2018528454A5 true JP2018528454A5 (https=) 2019-08-08

Family

ID=57684612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017568351A Ceased JP2018528454A (ja) 2015-07-03 2016-06-30 金属ナノ粒子の光焼結に基づく自己整合金属パターニング

Country Status (8)

Country Link
US (1) US11185918B2 (https=)
EP (1) EP3317724B1 (https=)
JP (1) JP2018528454A (https=)
KR (1) KR20180029052A (https=)
CN (1) CN107850834A (https=)
CA (1) CA2990283C (https=)
TW (1) TWI719032B (https=)
WO (1) WO2017004704A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102169064B1 (ko) * 2019-03-18 2020-10-22 서울시립대학교 산학협력단 빛-유도 광열 대류를 통한 콜로이드성 금속 나노입자 조립체 제조방법
KR102421599B1 (ko) * 2020-10-06 2022-07-15 재단법인대구경북과학기술원 광원을 통해 유도되는 연소반응 공정방법
CN112578605A (zh) * 2020-11-23 2021-03-30 义乌清越光电科技有限公司 一种电子纸封装结构、封装方法及电子器件
KR102709694B1 (ko) * 2021-09-14 2024-09-26 한국화학연구원 동박 적층판용 적층체, 이의 제조방법 및 미세 패턴 형성방법
WO2023043140A1 (ko) * 2021-09-14 2023-03-23 한국화학연구원 동박 적층판용 적층체, 이의 제조방법 및 미세 패턴 형성방법
WO2023091324A1 (en) * 2021-11-22 2023-05-25 Corning Incorporated Pulsed-laser sintering of ink-based electronics
KR102892843B1 (ko) * 2023-12-07 2025-12-02 위아코퍼레이션 주식회사 반도체 마이크로 소자 패키징 방법

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2019046C (en) 1989-06-16 1998-05-12 Satoshi Okazaki Method of printing fine patterns
JPH07273009A (ja) 1994-03-31 1995-10-20 Toppan Printing Co Ltd 厚膜パターンの製造方法
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US5602047A (en) 1996-06-13 1997-02-11 Industrial Technology Research Institute Process for polysilicon thin film transistors using backside irradiation and plasma doping
KR100229676B1 (ko) 1996-08-30 1999-11-15 구자홍 셀프얼라인 박막트랜지스터 제조방법
CN1404627A (zh) * 2000-10-10 2003-03-19 纽约市哥伦比亚大学托管会 处理薄金属层的方法与设备
US6972261B2 (en) 2002-06-27 2005-12-06 Xerox Corporation Method for fabricating fine features by jet-printing and surface treatment
JP4482631B2 (ja) 2004-02-20 2010-06-16 株式会社Ｅｍ研究機構 発酵技術を応用した洗浄剤及びその製造方法
US7309225B2 (en) 2004-08-13 2007-12-18 Molecular Imprints, Inc. Moat system for an imprint lithography template
US7408187B2 (en) * 2004-11-19 2008-08-05 Massachusetts Institute Of Technology Low-voltage organic transistors on flexible substrates using high-gate dielectric insulators by room temperature process
US20090020215A1 (en) 2005-04-15 2009-01-22 Hood Thomas G Optical Coatings With Narrow Conductive Lines
JP2007129007A (ja) * 2005-11-02 2007-05-24 Hitachi Ltd 有機半導体膜を有する半導体装置の製造方法
GB0523437D0 (en) * 2005-11-17 2005-12-28 Imp College Innovations Ltd A method of patterning a thin film
KR100718152B1 (ko) 2006-02-11 2007-05-14 삼성전자주식회사 유기발광다이오드 및 그 제조방법
US7749396B2 (en) 2006-03-24 2010-07-06 Palo Alto Research Center Incorporated Method of manufacturing fine features for thin film transistors
US7745101B2 (en) 2006-06-02 2010-06-29 Eastman Kodak Company Nanoparticle patterning process
US7491646B2 (en) * 2006-07-20 2009-02-17 Xerox Corporation Electrically conductive feature fabrication process
TWI308800B (en) * 2006-10-26 2009-04-11 Ind Tech Res Inst Method for making thin film transistor and structure of the same
EP1933393A1 (en) 2006-12-13 2008-06-18 Samsung SDI Co., Ltd. Method of manufacturing a substrate for an electronic device
US7615483B2 (en) 2006-12-22 2009-11-10 Palo Alto Research Center Incorporated Printed metal mask for UV, e-beam, ion-beam and X-ray patterning
US8404160B2 (en) 2007-05-18 2013-03-26 Applied Nanotech Holdings, Inc. Metallic ink
US7722422B2 (en) * 2007-05-21 2010-05-25 Global Oled Technology Llc Device and method for improved power distribution for a transparent electrode
KR100882023B1 (ko) 2007-05-25 2009-02-05 한국생산기술연구원 표면에너지 제어를 이용한 패터닝 방법
US20090181172A1 (en) 2007-10-15 2009-07-16 Nanoink, Inc. Lithography of nanoparticle based inks
JP4867904B2 (ja) 2007-12-10 2012-02-01 セイコーエプソン株式会社 導体パターン形成用インク、導体パターン、導体パターンの形成方法および配線基板
CN102017071B (zh) * 2008-02-28 2013-12-18 3M创新有限公司 图案化基底上的导体的方法
WO2010034815A1 (en) * 2008-09-25 2010-04-01 Imec Method for forming self-aligned electrodes
US8647979B2 (en) * 2009-03-27 2014-02-11 Applied Nanotech Holdings, Inc. Buffer layer to enhance photo and/or laser sintering
KR100984256B1 (ko) 2009-08-17 2010-09-30 (주) 파루 자기 정렬 그라비어인쇄를 이용한 중첩정밀도 제어 방법
KR101295888B1 (ko) 2010-05-10 2013-08-12 한국전자통신연구원 저항형 메모리 장치 및 그 제조 방법
US8465905B2 (en) 2011-04-04 2013-06-18 Eastman Kodak Company Printing conductive lines
JP2013065633A (ja) 2011-09-15 2013-04-11 Ricoh Co Ltd 電気機械変換膜の製造方法、電気機械変換素子の製造方法、該製造方法により製造した電気機械変換素子、液滴吐出ヘッド及び液滴吐出装置
KR20130045225A (ko) * 2011-10-25 2013-05-03 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 금속 나노입자를 함유한 전도성 페이스트
US9096759B2 (en) 2011-12-21 2015-08-04 E I Du Pont De Nemours And Company Printing form and process for preparing the printing form with curable composition having solvent-free epoxy resin
TW201335969A (zh) 2012-02-17 2013-09-01 Nat Univ Tsing Hua 微縮奈微米線寬之方法
EP2917948A1 (en) 2012-11-08 2015-09-16 Merck Patent GmbH Method for producing organic electronic devices with bank structures, bank structures and electronic devices produced therewith
KR102026165B1 (ko) * 2013-04-26 2019-09-27 쇼와 덴코 가부시키가이샤 도전 패턴의 제조방법 및 도전 패턴 형성 기판
US9310685B2 (en) * 2013-05-13 2016-04-12 Nokia Technologies Oy Method and apparatus for the formation of conductive films on a substrate
JP2015111563A (ja) 2013-11-06 2015-06-18 Ｄｏｗａエレクトロニクス株式会社 銅粒子分散液およびそれを用いた導電膜の製造方法
CN104750311B (zh) 2015-03-16 2018-02-13 深圳市宇顺电子股份有限公司 金属网格导电膜的制作方法、金属网格导电膜及触控面板
EP3514822B1 (en) * 2016-09-16 2023-04-26 Toray Industries, Inc. Method for manufacturing field effect transistor and method for manufacturing wireless communication device

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