CN104377188A - 玻璃基多芯片封装 - Google Patents

玻璃基多芯片封装 Download PDF

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Publication number
CN104377188A
CN104377188A CN201410393719.6A CN201410393719A CN104377188A CN 104377188 A CN104377188 A CN 104377188A CN 201410393719 A CN201410393719 A CN 201410393719A CN 104377188 A CN104377188 A CN 104377188A
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China
Prior art keywords
glass
glass substrate
light
based multi
chip package
Prior art date
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Pending
Application number
CN201410393719.6A
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English (en)
Inventor
T·周
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Maxim Integrated Products Inc
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Maxim Integrated Products Inc
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Publication of CN104377188A publication Critical patent/CN104377188A/zh
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
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  • General Chemical & Material Sciences (AREA)

Abstract

在各实施方式中，玻璃基多芯片封装包括：可光确定的玻璃基衬底、置于所述可光确定的玻璃基衬底上的至少一个电子元件、和所述可光确定的玻璃基衬底的已被曝光至紫外光的部分，其中所述可光确定的玻璃基衬底的所述部分包括陶瓷。此外，传感器封装可以包括额外的电子元件、玻璃触控面板、和/或印刷电路板。在各实施方式中，制造传感器封装装置包括：接收可光确定的玻璃基衬底、蚀刻所述可光确定的玻璃基衬底，和形成所述可光确定的玻璃基衬底的陶瓷部分。

Description

玻璃基多芯片封装
相关申请的交叉引用
本申请要求享有2013年8月15日提交的、题为“GLASS BASEDMULTICHIP PACKAGE”的美国临时申请序列号No.61/866,093的权益。美国临时申请序列号No.61/866,093以其整体通过引用被合并于此。
技术领域
本申请涉及玻璃基多芯片封装。本申请还涉及包括玻璃基多芯片封装的电子设备。本申请此外还涉及玻璃基多芯片封装的制造工艺。
背景技术
诸如智能电话、平板电脑、数字媒体播放器等等的电子设备越来越多地采用传感器来控制由该设备提供的多种功能的操作。例如，光传感器通常被电子设备使用，来检测周围的照明条件以便控制该设备的显示屏的亮度。类似地，光传感器通常被用在接近和手势感测应用中。接近和手势感测使得能够在使用者没有实际接触感测装置所存在于内的该设备的情况下检测肢体运动(例如，“手势”)。所检测到的运动可以随后被用作该设备的输入指令。
发明内容
描述了用于制造玻璃基多芯片封装的各封装技术，所述玻璃基多芯片封装包括一个或多个传感器或电子器件，诸如光传感器或光源，其中所述传感器和/或电子器件被置于可光确定的玻璃基衬底中和/或可光确定的玻璃基衬底上。
在各实施方式中，所述玻璃基多芯片封装包括：可光确定的玻璃基衬底、置于所述可光确定的玻璃基衬底上的至少一个电子元件、和所述可光确定的玻璃基衬底的已被曝光至紫外光的部分，其中所述可光确定的玻璃基衬底的所述部分包括陶瓷。此外，传感器封装可以包括额外的复数个电子元件、玻璃触控面板、和/或印刷电路板。在各实施方式中，制造所述传感器封装装置包括接收可光确定的玻璃基衬底、蚀刻所述可光确定的玻璃基衬底、以及形成所述可光确定的玻璃基衬底的陶瓷部分。
本“发明内容”被提供以便以简化的形式引入对下面在“具体实施方式”中被进一步描述的概念的选择。本“发明内容”并不意在确定所要求保护的主题的关键特征或基本特征，其也不意在被用作确定所要求保护的主题的范围时的一种辅助。
附图说明
详细的说明参考着附图进行描述。在说明书和各图中的不同例子中对相同附图标记的使用可以表示相近的或相同的特征。
图1A为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1B为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1C为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的俯视图。
图1D为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1E为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的俯视图。
图1F为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1G为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的俯视图。
图1H为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1I为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1J为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1K为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1L为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1M为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1N为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1O为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1P为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图1Q为示出了根据本申请的实例性实施方式的玻璃基多芯片封装的示意性局部横截面侧视图。
图2为流程图，其示出了在用于制造诸如图1A到1Q中所示的传感器封装的传感器封装的实例性实施方式中的工艺。
图3A到3D为示意性局部横截面侧视图，示出了根据图2中所示的工艺制造玻璃基多芯片封装，诸如图1A到1Q中所示的玻璃基多芯片封装。
图4A到4D为示出了玻璃基衬底曝光至紫外光以及玻璃的一部分转变至陶瓷的示意性局部横截面侧视图。
具体实施方式
概述
目前的用于传感器和其它电子元件的封装方案非常复杂，具有复杂的封装结构、显著的加工成本、以及低得不能再低的可靠性。目前的涉及传感器装置的方法和材料可以是昂贵的，并且在不显著增加组装工艺的复杂性以及显著增加与组装技术相关联的加工费用的情况下难以集成至典型的电子封装结构中。此外，许多多芯片光传感器封装在各传感器和/或各电子元件之间缺少光隔离。
因此，描述了用于制造玻璃基多芯片封装的封装技术，所述玻璃基多芯片封装包括一个或多个传感器或电子器件，诸如光传感器或光源，其中所述传感器和/或电子器件被置于可光确定的玻璃基衬底中和/或可光确定的玻璃基衬底上。
在各实施方式中，玻璃基多芯片封装包括可光确定的(photodefinable)玻璃基衬底、置于可光确定的玻璃基衬底上的至少一个电子元件、和可光确定的玻璃基衬底的已被曝光至紫外光的部分，其中可光确定的玻璃基衬底的所述部分包括陶瓷。此外，该传感器封装可以包括另外的复数个电子元件、玻璃触控面板、和/或印刷电路板。在各实施方式中，制造传感器封装装置包括接收可光确定的玻璃基衬底、蚀刻所述可光确定的玻璃基衬底、和形成所述可光确定的玻璃基衬底的陶瓷部分。
实例性实施方式
图1A到1Q示出了根据本申请的实例性实施方式的玻璃基多芯片封装100。如所示出的，该玻璃基多芯片封装100包括玻璃基衬底102。
在各实施方式中，玻璃基衬底102包括可光确定的(可光构造的)玻璃。可光确定的玻璃可以包括敏化剂，其允许独特的各向异性的3D特征通过曝光至紫外(UV)光和随后对曝光至UV光之后形成的陶瓷的烘焙和蚀刻而被形成。在一个实施方式中，接收玻璃基衬底102包括接收可光确定的玻璃衬底，其中所述玻璃衬底是光学透明的、化学惰性的、且直到大约450℃热稳定的。此外，玻璃基衬底102可以包括具有比陶瓷状态高的热膨胀系数的玻璃。在一个实施方式中，玻璃基衬底102可以被曝光至UV光、被烘焙和转变成陶瓷110、并被蚀刻。在曝光和蚀刻工艺期间，不同的特征可以在玻璃基衬底102中被形成，诸如透镜、孔(例如，用于形成穿过玻璃的通路)、和/或腔。在各实施方式中，玻璃基衬底102的不同部分可以被转变成陶瓷110并且可以被蚀刻或被保持未蚀刻。此外，由蚀刻形成的各特征可以被填充有其它不透明的和/或导电的材料。在一个实施方式中，玻璃基衬底102可以被转变成陶瓷状态并被保持未蚀刻以便例如形成光隔离元件。
在各实施方式中，玻璃基多芯片封装100包括至少一个电子元件104。在一些实施方式中，电子元件104可以包括集成电路芯片，该集成电路芯片具有形成于其中的复数个集成电路和/或复数个无源器件(例如，电感器，电容器，和/或电阻器)。在其它实施方式中，电子元件104可以包括传感器装置106，诸如光传感器(例如，诸如光电晶体管或光电二极管的光探测器等)。在一些实施方式中，电子元件104包括光源(例如，发光装置108，诸如LED)。其它类型的电子元件也可以被采用(例如，化学传感器，生物传感器，它们的组合，等等)。电子元件104可以被置于玻璃基衬底102上和/或被形成在玻璃基衬底102内，诸如在表面上或在玻璃基衬底102中所蚀刻的腔内。
在各实施方式中，玻璃基多芯片封装100包括互连部122。互连部122可以包括被构造成在玻璃基衬底102、电子元件104、和/或外部装置(例如，印刷电路板、玻璃触控面板等等)之间提供电连接性的互连。在一些实施方式中，互连部122包括至少一个焊料球114。此外，其它类型的互连部122可以被使用，诸如再分布层、金属触垫、和/或穿过玻璃的通路。在这些实施方式中，玻璃基多芯片封装100可以利用多芯片级封装技术被制造以便于各装置的电互连。
在一些实施方式中，再分布层120被用作玻璃基多芯片封装100的各电子元件104和其它元件之间的电互连。再分布层120可以包括薄膜金属(例如，铝，铜等)重布线和互连系统，该系统将各导电层再分布到接触垫(例如，UBM触垫)或可被部署在玻璃基多芯片封装100的表面上的焊料球114的区域阵列。
在一些实施方式中，至少一个焊料球114被形成在玻璃基衬底102上。复数个焊料球114可以被形成在玻璃基衬底102上。各焊料球114被设置成在各电子元件104之间提供机械的和/或电的互连。在一个或多个实施方式中，各焊料球114可以由无铅的焊料制成，诸如锡-银-铜(Sn-Ag-Cu)合金焊料(即，SAC)、锡-银(Sn-Ag)合金焊料、锡-铜(Sn-Cu)合金焊料、等等。
玻璃基多芯片封装100还可以包括穿过玻璃的通路118，其穿过玻璃基衬底102从一个表面到远侧表面延伸。穿过玻璃的通路118可以包括导电材料，该导电材料提供电子元件(例如，再分布层)之间的电互连。在一个或多个实施方式中，该导电材料可以包括金属材料(例如，铜，铝等)。
在一个实施方式中并且如图1A中所示，玻璃基多芯片封装100包括玻璃基衬底102、至少一个光学窗口112、至少一个焊料球114、和至少一个电子元件104。在该实施方式中，玻璃基衬底102包括已被曝光至紫外光且被转变成不透明的陶瓷110的部分。已被转变成陶瓷110的那部分可以用来阻止环境光的至少一部分到达传感器装置106。玻璃基衬底102的未被转变成陶瓷110的那些部分可以起光学窗口112的作用。如图1A中所示，光学窗口112可以包括玻璃窗口。如图1B中所示，光学窗口112可以是透镜。如图1A中所示，各电子元件104可以包括置于玻璃基衬底102一侧(例如，包括焊料球114的那侧)上的传感器装置106和发光装置108(例如，LED)。图1C示出了玻璃基多芯片封装100的俯视图，其示出了具有传感器装置106和发光装置108的玻璃基衬底102。图1C中，各虚线代表置于玻璃基多芯片封装100的底侧上的各电子元件104(例如，传感器、LED、集成电路芯片装置)的边界(例如，边缘)。
在一个实施方式中并且如图1D中所示，玻璃基多芯片封装100包括具有至少一个光学窗口112的玻璃基衬底102、至少一个焊料球114、和至少一个电子元件104(例如，传感器装置106和/或发光装置108)。在该实施方式中，玻璃基衬底102的一部分可以被激光钻孔以形成槽116而剩余的部分为玻璃。槽116可以被填充有不透明材料(例如，环氧树脂浆料，电镀的金属，等等)。图1E示出了玻璃基多芯片封装100的俯视图，其示出了填充有不透明材料的各槽116，所述不透明材料可以起光隔离元件的作用。图1E中，各虚线代表置于玻璃基多芯片封装100的底侧上的各电子元件104的边缘。
在一个实施方式中并且如图1F中所示，玻璃基多芯片封装100包括具有至少一个光学窗口112的玻璃基衬底102、和至少一个电子元件104(例如，传感器装置106和/或发光装置108)。在该实施方式中，玻璃基衬底102的接近光学窗口112的部分可以被曝光至紫外光并被烘焙以便形成陶瓷110的部分。在该实施方式中，陶瓷110的部分围绕光学窗口112，并且光学窗口112仅暴露电子器件104的一部分。图1G示出了玻璃基多芯片封装100的俯视图，其示出了围绕着覆盖了传感器装置106和/或发光装置108的光学窗口112的陶瓷110的部分。
在一个实施方式中并且如图1H中所示，玻璃基多芯片封装100包括安装在印刷电路板124上的玻璃基衬底102。在该实施方式中，玻璃基衬底102包括陶瓷110部分和覆盖着传感器装置106与发光装置108的光学窗口112。玻璃基衬底102可以利用诸如焊料球114阵列的电互连部122安装在印刷电路板124上。在该实施方式中，各电子元件104可以被安装至玻璃基衬底102的背面，并且玻璃基衬底102可以利用例如焊料球114阵列被安装至印刷电路板124。如图1H中所示，电子元件(一个或多个)104可以被安装至玻璃基衬底102的背面，玻璃基衬底102又可以被安装至印刷电路板124。在类似的实施方式中并且如图1I中所示，玻璃基衬底102可以被安装至玻璃触控面板126。在该实施方式中，电子元件(一个或多个)104可以在玻璃基衬底102的一侧上被安装至玻璃基衬底102，所述一侧远离被安装至玻璃触控面板126的那侧。
在一个实施方式中并且如图1J和1K中所示，玻璃基多芯片封装100包括具有蚀刻于和/或形成于玻璃基衬底102中的至少一个腔的玻璃基衬底102。在该实施方式中，玻璃基衬底102可以被或可以不被部分地转变成陶瓷110。至少一个电子元件104可以被置于腔中并且被接合至玻璃基衬底102。在图1J中所示的实施方式中，电子元件104可以由包封材料134包封。在图1K中所示的实施方式中，各电子元件104被置于形成于玻璃基衬底102中的各腔中而没有包封材料134，并且玻璃基衬底102包括至少一个穿过玻璃的通路118，所述通路将各电子元件104电接合至例如再分布层和焊料球114阵列或其它的互连部122。
在一个实施方式中，玻璃基多芯片封装100包括无源器件128和具有至少一个电子元件104的玻璃基衬底102，所述电子元件被置于形成于玻璃基衬底102中的腔中。在该实施方式中，传感器装置106和/或电子器件104(例如，集成电路芯片)在玻璃基衬底102的焊料球114的侧上被置于各腔中，并且无源器件128和电子器件104(例如，集成电路芯片)被置于玻璃基衬底102的与焊料球114侧相反的表面上。电子元件(一个或多个)104和/或无源器件(一个或多个)128可以通过至少一个穿过玻璃的通路118和/或再分布层120被电连接至作为玻璃基多芯片封装100的一部分的其它电学器件(一个或多个)。在类似的实施方式中并且在图1M中所示，玻璃基多芯片封装100包括无源器件128和玻璃基衬底102，所述玻璃基衬底102具有被置于形成于玻璃基衬底102中的腔中的至少一个电子元件104、和在与焊料球114侧相反的那侧上安装在玻璃基衬底102上的电子元件104(例如，倒装芯片)。电子元件104的一部分可以延伸至形成于玻璃基衬底102中的腔中，并且该腔可以完全穿过玻璃基衬底102延伸(例如，在敞开的腔中的裸片叠层)。图1N示出了类似的实施方式，其中玻璃基多芯片封装100包括如在图1M中所示的类似的电子元件104叠层(例如，裸片叠层)，除了容纳各电子元件104的各腔可以被填充有包封材料134(例如，环氧树脂等)之外。在图1N中所示的实施方式中，焊料球114阵列和/或再分布层120可以至少部分地在包封材料130上方被形成。
在另一实施方式中并且如在图1P中所示，玻璃基多芯片封装100包括至少一个腔被形成于其中的玻璃基衬底102。在该实施方式中，电子元件104可以被置于该腔中并且包封材料130被形成在该腔中和该电子元件104周围。电子元件104可以被电接合至再分布层120和/或焊料球114阵列。在一些实施方式中，远离玻璃基衬底102的具有焊料球114阵列的侧的玻璃基衬底102的那侧可以利用例如磨削或研磨工艺被变薄。
在一个实施方式中并且如图1Q中所示，玻璃基多芯片封装100包括至少一个腔被形成于其中的玻璃基衬底102。至少一个电子元件104可以被置于该腔中和胶合带132上。胶合带132可以被放置于玻璃基衬底102的一侧上。电子元件104然后可以被放置于该腔中和该胶合带132上。胶合带132可以用来在包封材料130(例如，丝网印刷的环氧树脂)被放置在该腔中时将电子元件104固定在位。其它的材料和元件可以被包括在该实施方式中以便完成玻璃基多芯片封装100(例如，添加互连部122，焊料球114，额外的电子元件104，等等)。
实例性制造工艺
图2示出了实例性工艺200，该工艺采用传感器封装技术来制造传感器封装，诸如在图1A到1Q中所示的玻璃基多芯片封装100。图3A到3D示出了被用来制造多芯片装置(诸如在图1A到1Q中所示的玻璃基多芯片封装100)的实例性玻璃基多芯片封装300的截面。
如在图2中所示的，可光确定的玻璃基衬底被接收或被形成(方框202)。图3A示出了玻璃衬底302的一部分。在各实施方式中，玻璃衬底302包括可光确定的(可光构造的)玻璃。可光确定的玻璃可以包括敏化剂，所述敏化剂允许独特的各向异性的3D特征通过曝光至紫外光而被形成。在一个实施方式中，接收玻璃衬底302包括接收可光确定的玻璃衬底，其中该玻璃衬底是光学透明的、是化学惰性的、并且直到大约450℃是热稳定的。
可光确定的玻璃基衬底被蚀刻(方框204)。当如在图3B中所示被曝光至紫外光时，可光确定的玻璃衬底302转变成陶瓷，其在需要时可以被蚀刻。在一个实施方式中，玻璃衬底302被曝光至来自标准泛光紫外光系统的光。在一个实施方式中，曝光玻璃衬底302包括使用各种各样的高能深紫外和中紫外激光(例如，具有大约310nm的波长)。其它类型的可光以被用来曝光玻璃衬底302。
图3C示出了至少一部分已被曝光至紫外光的玻璃衬底302。在一些实施方式中，光刻胶层可以被施加到玻璃衬底302以用于为玻璃衬底302形成图案。在其它的实施方式中，掩模(例如，石英-铬掩模)可以被用来以所期望的图案将光投射在玻璃衬底302上。在玻璃衬底302曝光至紫外光之后，玻璃衬底302的该部分可以被烘焙以便将已曝光部分转变成可以被蚀刻的陶瓷304。在一个实施方式中，玻璃衬底302可以在大约500℃的温度下被烘焙以便允许玻璃衬底302中的光活化剂迁移到一起以形成纳米簇。在该实施方式中，温度可以被升高至第二温度以便诱导陶瓷在接近各纳米簇的玻璃基质内成核。在烘焙之后，玻璃衬底302的被曝光的各区域转变成陶瓷(例如，褐色或不透明的陶瓷)。在各实施方式中，陶瓷304被蚀刻。在一个实施方式中，蚀刻陶瓷304可以包括以超声波浴在氢氟酸(HF)溶液中蚀刻陶瓷。在各实施方式中，玻璃衬底302的未曝光部分基本上未受HF蚀刻工艺的影响。此外，其它类型的蚀刻剂和蚀刻工艺可以被采用(例如，等离子体蚀刻等)。在蚀刻工艺之后，光学窗口306(例如，玻璃窗口或透镜)可以被形成，其可以作为玻璃衬底302的一部分被包括，如在图3C中所示。在一些实施方式中，玻璃衬底302可以被蚀刻以便形成光学窗口306(例如，透镜、窗口等)、穿过玻璃的通路、或用于填充其它材料(例如，不透明材料等)的槽。
可光确定的玻璃基衬底的至少一部分被形成为陶瓷(方框206)。在其它的实施方式中，玻璃衬底302的复数个部分可以被转变成陶瓷(例如，各陶瓷部分304)，诸如在前面的段落中所描述的。在这些实施方式中，陶瓷304可能不打算被进一步蚀刻，而是陶瓷304被打算起隔离材料作用。在一个实施方式中，玻璃衬底302的已被预蚀刻的部分被曝光至紫外光并被烘焙以便形成陶瓷304，这里该陶瓷304被用来起光隔离器和/或挡光板的作用。
预期的是其它的半导体制造技术可以被用来完成玻璃基多芯片封装100制造工艺。例如，光刻胶的进一步剥离、对种子和各阻挡金属的蚀刻来电隔离各电镀(plated-up)线、以及钝化层的沉积可以被包括。例如，未镀区域中的种子和阻挡金属可以被去除从而形成各电互连。
图4A到4D示出了将玻璃基衬底102的一部分曝光至紫外光以用于将玻璃基衬底102的一部分转变成陶瓷110的工艺。图4A描绘了紫外光(UV)强度对玻璃基衬底102的位置的实例性图表。例如，当紫外光强度增大(由各箭头表示)时，玻璃基衬底102的更大(例如，更深)部分可以被曝光。玻璃基衬底102的被曝光的部分可以在烘焙工艺之后被转变成陶瓷110，这在前面进行了描述并在图4B中进一步示出。图4C示出了玻璃基衬底102，其中玻璃基衬底102的被曝光至紫外光并被转变成陶瓷110的部分已利用蚀刻工艺被去除。图4D示出了其中玻璃基衬底102的一部分已被进一步曝光至紫外光。玻璃基衬底102然后可以再次被烘焙，并且玻璃基衬底102的被转变成陶瓷110的部分于是可以起挡光板的作用。
结论
尽管本主题已用针对结构性特征和/或工艺操作的语言进行描述，将被理解的是所附的权利要求中所限定的主题并不必限制于上述的具体特征或动作。相反，上述的具体特征或动作是作为实现各权利要求的实例形式被公开的。

Claims (20)

1.一种玻璃基多芯片封装，其包括：
可光确定的玻璃基衬底；
置于所述可光确定的玻璃基衬底上的至少一个电子元件；和
所述可光确定的玻璃基衬底的已被转变成光学不透明材料的部分。
2.如权利要求1所述的玻璃基多芯片封装，其中所述可光确定的玻璃基衬底包括光学透明的玻璃基衬底。
3.如权利要求1所述的玻璃基多芯片封装，其中所述可光确定的玻璃基衬底包括热稳定的玻璃基衬底。
4.如权利要求1所述的玻璃基多芯片封装，其中所述电子元件包括集成电路芯片。
5.如权利要求1所述的玻璃基多芯片封装，其中所述电子元件包括传感器。
6.如权利要求1所述的玻璃基多芯片封装，其中所述电子元件包括光源。
7.如权利要求1所述的玻璃基多芯片封装，还包括至少一个互连部。
8.如权利要求1所述的玻璃基多芯片封装，还包括至少一个穿过玻璃的通路。
9.一种电子设备，其包括：
印刷电路板；和
玻璃基多芯片封装，所述玻璃基多芯片封装包括：
可光确定的玻璃基衬底；
置于所述可光确定的玻璃基衬底上的至少一个电子元件；和
所述可光确定的玻璃基衬底的已被转变成光学不透明材料的部分，其中所述光学不透明材料包括陶瓷。
10.如权利要求9所述的电子设备，其中所述可光确定的玻璃基衬底包括光学透明的玻璃基衬底。
11.如权利要求9所述的电子设备，其中所述可光确定的玻璃基衬底包括热稳定的玻璃基衬底。
12.如权利要求9所述的电子设备，其中所述电子元件包括集成电路芯片。
13.如权利要求9所述的电子设备，其中所述电子元件包括传感器。
14.如权利要求9所述的电子设备，其中所述电子元件包括光源。
15.如权利要求9所述的电子设备，还包括至少一个互连部。
16.如权利要求9所述的电子设备，还包括至少一个穿过玻璃的通路。
17.玻璃基多芯片封装的制造方法，其包括：
接收可光确定的玻璃基衬底；
蚀刻所述可光确定的玻璃基衬底；和
形成所述可光确定的玻璃基衬底的陶瓷部分。
18.如权利要求17所述的方法，其中接收可光确定的玻璃基衬底包括接收光学透明的玻璃。
19.如权利要求17所述的方法，其中蚀刻所述可光确定的玻璃基衬底包括将所述衬底的至少一部分曝光至紫外光。
20.如权利要求17所述的方法，其中蚀刻所述可光确定的玻璃基衬底包括使用氢氟酸。
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