TWI719032B - 用於在製造一多層可印刷電子裝置對準金屬層之方法 - Google Patents

用於在製造一多層可印刷電子裝置對準金屬層之方法 Download PDF

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TWI719032B
TWI719032B TW105120938A TW105120938A TWI719032B TW I719032 B TWI719032 B TW I719032B TW 105120938 A TW105120938 A TW 105120938A TW 105120938 A TW105120938 A TW 105120938A TW I719032 B TWI719032 B TW I719032B
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particles
metal
substrate
layer
silver
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志一 張
業 陶
朱達雅
高志 蕭
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加拿大國家研究委員會
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Abstract

揭露一種用於在製造一多層可印刷電子裝置使層對準之方法。此方法需要提供於上沉積一第一金屬層之一透明基材，於第一金屬層上提供一透明功能層，使金屬奈米粒子沉積於功能層上形成一第二金屬層，使金屬奈米粒子曝露於通過基材底面之強烈脈衝光，以使經曝光之粒子與功能層部份燒結，藉此，第一金屬層作為一光遮罩，及使用一溶劑清洗掉未經曝光之粒子以使經部份燒結之金屬奈米粒子留於基材上。

Description

用於在製造一多層可印刷電子裝置對準金屬層之方法 技術領域
本揭露一般係有關於用於可印刷電子裝置之製造技術，且特別地係用於在製造一多層可印刷電子裝置使層對準之技術。
背景
使功能性墨水印刷於可撓性且低成本之基材上係一日益普及的製造電子裝置之方法。經常用於製造電子裝置之一多層印刷方法仍充滿挑戰，因為當一上層印刷於一下層時係難以達成所需之對準或對位精確性。為解決於層對層之對準正確性的問題，一自對準方法被提出(Palfinger等人，Adv.Mater.2010,22,5115-5119)用於印刷有機電晶體。於此方法，第一金屬層係藉由奈米壓印微影術或微接觸印刷方法，其後藉由一濕式蝕刻步驟而圖案化。此經圖案化之金屬層其後作為一遮罩，經由一傳統或捲對捲(R2R)光微影術方法及一剝離步驟使下一金屬層圖案化。但是，於此提議之自對準方法，金屬層係經真空蒸 發，且需要數個光微影術、濕式蝕刻，及剝離步驟。為使此自對準方法真的能與R2R印刷方法相容，所欲地係具有可使用最少濕潤步驟印刷及圖案化之金屬層。
紫外線固化型金屬墨水，其等係以金屬顆粒埴充之紫外線固化型樹脂，係用於一自對準方法替代真空沉積金屬層之具潛質候選物。但是，於自對準方法使用紫外線固化型金屬墨水具有嚴重缺點。首先，紫外線固化型金屬墨水含有光起始劑及交聯劑，其等留於膜中且降低形成金屬膜之導電性。第二，經印刷之金屬膜係不透明，紫外線透入深度於此種膜係極受限制，且可交聯之厚度亦極受限制。第三，此等墨水可達成之圖案化解析度基本上係受其金屬粒子之尺寸所限制。
因此，一新穎或改良之自對準技術係高度期望的，以便促進多層可印刷電子裝置之製造。
概要
本揭露提供一種用於製造多層可印刷電子裝置之新穎自對準技術。此方法能使印刷於上層上之金屬圖案與下層或底層上之墨水圖案高精確地對準。一金屬奈米粒子墨水或任何其它相等墨水作為一負型光阻劑，使得印刷或沉積於一透明基材上之第一金屬層可作為一遮罩。然後，強烈光脈衝自基材背面施用使露出之金屬奈米粒子部份燒結。於遮蔽區之金屬奈米粒子未被燒維，因此可被清洗掉。然後，經部份燒結之粒子於一後燒結步驟完全燒結。 部份燒結包括使粒子曝露於具最短脈衝之最小所需光功率，使露出之粒子最少燒結，使得其等只是勉強地與功能層連接，以抵抗功能層於其後清洗步驟期間被清洗掉。
因此，本揭露之一發明方面係一種於製造一多層可印刷電子裝置時使金屬層對準之方法。此方法需要提供於其上沉積一第一金屬層之一透明基材；於第一金屬層上提供一透明功能層；使金屬奈米粒子沉積於功能層上形成一第二金屬層；使金屬奈米粒子曝露於通過基材底側之強烈脈衝光，以使露出之粒子與功能層部份燒結，藉此，使第一金屬層作為一光遮罩；及使用一溶劑清洗掉未被曝光之粒子，以使經部份燒結之金屬奈米粒子留於基材上。功能材料可為一導體、半導體、介電、電致發光、光伏，或任何其它電子功能。
此概要係提供用以突顯某些顯著發明方面，但並不意圖詳盡或限制性地界定本揭露之所有發明方面。其它發明方面可於詳細說明及圖式中揭露。
10:透明基材
12:第一金屬層
14:透明功能層
16:第二金屬層
18:經部份燒結之粒子
圖式簡要說明
本技術之進一步特徵及優點由結合所附圖式而進行之下列詳細說明會變得明顯，其中：圖1係例示金屬奈米粒子如何被作為一負型光阻劑之一例子；圖2係以舉例方式例示一種基於金屬奈米粒子之光燒結之自對準金屬圖案化之方法； 圖3A例示於PET膜上產生之銀奈米粒子墨水之一經乾燥塗層；圖3B例示於其上表面與暗色帶條結合之另一PET膜下，於樣品被曝露於強烈脈衝光後於PET上之銀奈米粒子塗層；圖3C例示當經曝光之樣品浸入去氫萘內顯影時於PET上之銀奈米粒子塗層；圖3D例示於未曝光樣品以去氫萘清洗後留下之塗層；圖4A例示於PET上之銀奈米粒子塗層之預先存在的銀圖案；圖4B例示於樣品曝露來自具有預先存在的銀圖案之側的光且以一溶劑清洗後，於上述PET之相反側上之由銀奈米粒子形成之塗層；圖5A例示於PET之一側上之由銀奈米粒子形成之一預先存在之銀圖案；圖5B例示樣品被曝露於來自具圖案側之光且以一溶劑清先後，於相反側上之銀奈米粒子之圖案；圖6A-6D描述於PET膜上之銀奈米粒子墨水之加工塗層，其中，此塗層於水中顯影之前係曝露於來自事先以一銀圖案印刷之PET的背面之強烈脈衝光；圖7A及7B描述於PET膜上之一銀奈米粒子塗層，其中，此塗層係曝露於來自其基材的一背面之強烈脈衝光； 圖8A及8B描述於一以PMMA(聚(甲基丙烯酸甲酯))塗覆之PET膜上之一銀奈米粒子墨水塗層，其中，300nm PMMA係塗覆於具有印刷銀圖案之PET上，且樣品曝置於來自PET之背面的強烈脈衝光，且其後之顯影係於水中實行；圖9A及9B描述於以PMMA覆蓋之PET膜上之一銀奈米粒子墨水塗層，其中，300nm PMMA塗覆於具有印刷銀圖案之一PET表面上，且樣品曝露於來自PET的背面之強烈脈衝光，且其後之顯影係於乙醇中實行；及圖10A及10B描述於一以PMMA覆蓋之PET膜上之一銀奈米粒子墨水線，其中，此墨水線係使用一噴墨印表機印刷於在PET膜上之300nm-PMMA上，且曝光係來自PET膜之背面，且顯影係於水中實行。
需注意於所附圖式各處，相同特徵係以相同參考編號識別。
詳細說明
此處揭露一種使用光子燒結程序及金屬奈米粒子墨水用於自對準金屬圖案化技術之方法(或程序)。此方法避免對於多個光微影術步驟或金屬真空沉積之需求。上層與下層及底層之金屬圖案間高精確對準係藉由使用金屬奈米粒子墨水作為一負型光阻劑而達成。印刷於一透明基材上之第一金屬層作為一遮罩阻擋自基材背面施用之光。自基材背面施用之強烈光脈衝使露出，即，未受遮罩覆蓋，之奈米粒子部份燒結。被遮蔽之金屬奈米粒子未受燒結影 響，因此，可被洗掉。
此方法主要係意圖用於藉由印刷或一相當之低成本沉積程序製造具有一多層結構之電子裝置。許多電子裝置需要一多層結構，其中，上層之一者的圖案需與下面層之圖案精確地對準，以便正確或最佳地作用。例如，一電晶體需要於上層之金屬電極與下面層之電極精確地對準。此處揭露之方法利用使金屬奈米粒子光子燒結而使上層中之金屬圖案與下面層之金屬圖案精確地對準。換言之，此方法促進製造需要上層與下層精確對準之多層可印刷電子裝置。
金屬奈米粒子於紫外線至近紅外線之波長範圍展現強烈電漿子吸收，因此，可藉由光加熱。金屬奈米粒子因為其等之奈米尺寸而亦具有極低熔融溫度，因此，可於，例如，120℃之極低溫度燒結。因此，可藉由藉由電漿子吸收產生之熱使粒子燒結於基材上。雷射及強烈脈衝光二者可被用於直接照射，因此使金屬奈米粒子之粒子燒結，於基材上產生塗層及圖案。
金屬奈米粒子之光子燒結會造成個別之粒子形成一緻密金屬膜。此程序有點相似於聚合物之紫外線造成的交聯，此使聚合物變不可溶。但是，此二者具有一些基本差異：1)紫外線交聯反應係藉由紫外光中之光子直接造成，因此，交聯深度係受光透入深度所限制。於印刷金屬膜之情況，交聯深度限於表面區域，而金屬奈米粒子之燒結係藉由強烈短光脈衝產生局部產造成。雖然光脈衝於透 入深度亦受限，但是光脈衝產生之熱可於一合理範圍(100’s nm)轉移。此轉移範圍係足夠大而使用於典型可印刷電子之金屬膜(具有~100’s nm之典型厚度)燒結。再者，光子燒結產生極佳側圖案化解析度(100’s nm對10’s μm)。再者，熱轉移範圍可藉由改變脈衝強度、頻率，及時間而控制；2)紫外線交聯程序需要光起始劑及交聯劑，此等會留在膜中且影響其等之性質。相反地，金屬奈米粒子之燒結基本上係一粒子熔融程序，使得形成之膜具有與本體材料極相似之性質；3)紫外線交聯程序係使用以紫外線可固化之聚合物為主之墨水，此聚合物係以於直徑或長度一般係數微米之金屬粒子填充。可達成之圖案化解析度不能小於粒子尺寸。
圖1例示一種使用金屬奈米粒子作為一負型光阻劑之方法。金屬奈米粒子係先藉由一適合沉積方法，諸如，塗覆或印刷，使用以金屬奈米粒子懸浮之液體，或所謂之奈米墨水沉積於基材上。於粒子乾燥後，使粒子曝露於通過一光罩之強烈脈衝光，其波長係實質上涵蓋或粒子之電漿子吸收波長或與其相符合。露出之粒子藉由吸收之能量部份燒結，因此，於顯影程序使用一溶劑清洗掉未被曝光之粒子時附著於基材。最後，實施一後燒結程序使粒子完全燒結於基材上，變得具有所欲性能特徵之一緻密金屬膜。
圖2係例示用於金屬圖案化技術之自對準方法。此方法使用金屬奈米粒子之光子燒結。奈米粒子墨水係沉積於底下具有第一金屬圖案之基材表面上，奈米粒子墨水係藉由用於特別功能之一透明材料或藉由基材本身隔開。 光係從基材背面放射出。底層上之金屬圖案作為一光遮罩。露出之粒子由於光子誘發之部份燒結而附著於基材。此等經部份燒結之粒子經由顯影程序留於表面上。熱退火後，與預先存在之金屬圖案精確對準之留下材料於一後燒結程序完全燒結，獲得諸如導電性之所欲性能特徵。圖2顯示由下述者所組成之一堆疊物之結構：一透明基材10，沉積於其上之一第一金屬層12，於第一金屬層上之一透明功能層14，及一第二金屬層16，其係藉由使金屬奈米粒子沉積於透明功能層14上而形成。然後，金屬奈米粒子被部份光子燒結，於第二金屬層以一適當溶劑清洗後，留下經部份燒結之粒子18，其形成一圖案或線。於燒結後留下之經燒結的粒子18與第一金屬層對準。功能層係由一功能材料製成，其可為一導體、半導體、介電、電致發光、光伏，或任何其它電子功能。
金屬奈米粒子之光子燒結係與廣泛用於以光微影術為主之製造技術的傳統紫外線誘發之光交聯基本上不同。傳統紫外線誘發之光交聯程序係依靠光透入欲被固化之膜內。紫外光不會充份透入一印刷金屬膜內。於本發明，光子燒結圖案化程序基本上仍係一燒結程序，其中，粒子係經由金屬奈米粒子之電漿子吸收而產生之熱而於其等之表面熔融在一起。由於金屬之高導熱性，於奈米粒子塗層之厚度方向及側方向，熱可自經曝光之粒子快速轉移至相鄰的未經曝光之粒子，造成未經曝光之區域燒結。此作用於經由整個塗層厚度之燒結粒子係重要，但亦會造成被遮 蔽端緣區域燒結，因此，降低圖案化解析度。為使此負作用達最小，本發明使用部份燒結。其使用具最短脈衝之所需光功率，使經曝光之粒子最小燒結，因此，其等係僅僅連接或熔融至使其等變成能抵抗用於使奈米粒子分散或懸浮之溶劑且與基材具有足夠附黏之程度。藉此，未經曝光之奈米粒子可以用於使粒子分散於其等原始液體樣品或墨水內之溶劑輕易且乾淨地清洗掉，且經曝光者會留於基材上。藉由部份連接之奈米粒子而形成之獲得膜的諸如導電性之所欲性能特徵於此階段可能係差的，但於一後燒結程序使粒子完全燒結後可被戲劇性地改良至應用所需之程度。
此方法係藉由使一薄銀奈米粒子層塗覆於一片DuPont PET膜(Melinex ST 505)上，且使塗層於另一片PET膜下曝露於強烈脈衝光而例示，此另一片PET膜具有與其上表面結合之暗色聚合物帶條。於此第一範例(範例1)，於PET膜上之銀奈米粒子塗層係使用加拿大Xerox研究中心(XRCC)生產之XF-1銀奈米墨水及Erichsen之刮刀塗覆設備(509MC)製備，且於室溫乾燥(圖3A所示)。於上表面具有結合之暗色帶條的另一片PET膜作為一光遮罩，且置於經塗覆之PET膜上面，例如，於圖1所例示。於光子固化R&D系統(Xenon公司之Sinteron 2000)內，通過上述遮罩，使奈米粒子塗層曝露於程式化強烈脈衝光(2.4kV，雙重曝光，每一者係200微秒，於每一週期之板位移係5mm)後，照光部份變成金色，而被阻絕且因此未被曝光之部份保持其原始顏 色(如圖3B所示)。當樣品浸入去氫萘內時，未曝光部份立即變黑色(如圖3C所示)，且逐漸擴散至溶劑內。於未曝光之銀粒子被完成清洗掉後，透明PET於未曝光區域被回收，顯示暗色帶條之相對應圖案，且於剩餘塗層留下銳緣(如圖3D所示)。留下塗層(其係660nm厚)之電阻被測得於二相鄰角落間係於30至60kΩ之範圍。樣品於130℃熱退火30分鐘後，電阻降到0.9至1.3Ω。
將上述方法應用於自對準銀圖案化技術，如圖2之舉例顯示，基材之作用需被考量。當光行經塗覆基材於到達奈米粒子塗層前，其能量會部份被基材吸收且轉化成熱。此熱會與先前探討之粒子至粒子的轉移結合，並且影響微影術程序。些微降低量之曝光被測試於實質上避免此狀況或至少使此狀況達最小，及因而實施本發明之自對準金屬沉積方法係有效。於另一範例(範例2)，於一側上具有一安定印刷銀圖案之一PET膜(例如，DuPont之Melinex ST 505)係於另一側上使用刮刀塗覆設備，例如，Erichsen之509MC，以加拿大Xerox研究中心(XRCC)生產之XF-1銀奈米墨水塗覆。經室溫乾燥之塗層被置於光子固化R&D系統(例如，Xenon公司之Sinteron 2000)內，預先印刷之銀面朝上且新塗層面朝下而曝光(其係，例如，以2.4kV實行，雙重曝光，每一者係180微秒，且每一週期之板位移係5mm)。其後，樣品被浸於含有去氫萘(作為一適合溶劑之一例子)之一烘烤器內，清洗掉未曝光區域。未促進奈米粒子自PET表面移除，藉由使含有去氫萘之烘烤器置於一超音波水浴 內而使超音波施加至溶液。清洗此塗層後，此塗層於此範例具有1010nm厚度，看到具有印刷銀圖案之反式圖案，如一印刷銀格柵(圖4A)與圖案化塗層(圖4B)之比較所示。於銀奈米粒子塗層，受預先存在(預先印刷)之銀圖案阻絕之區域被移除，且二個別之圖案彼此精確地對準。對於圖4A之樣品，二相鄰角落間之留下塗層的最低電阻被測得係130kΩ，其於130℃熱退火30分鐘後降到1.2Ω。
留下銀粒子塗層之每一圖案被觀察到精確地反映被用以阻絕光之相對應的預先存在的銀圖案。如圖5A及5B之舉例顯示，可觀察到於一光學顯微鏡下，於程序完全後，PET膜另一側上以預先存在之銀圖案覆蓋之區域(圖5A)於此膜之以銀奈米粒子塗覆之側上係無銀(圖5B)。甚至在預先存在之銀圖案的端緣缺陷被轉移至新產生之圖案，此進一步證實此二層間之高對準精確性。
於另一範例(範例3)，於一側上印刷一銀圖案之一PET膜(Dupont之ST 505)於其另一側上使用一玻璃管以銀奈米墨水(Sunjet之EMD5603)噴灑塗覆。於65℃乾燥後，塗層曝露於光子固化R&D系統(Xenon公司之Sinteron 2000)內，印刷銀圖案面朝上，且新塗層面朝下。曝光於2.6kV，以120微秒連續曝光，及1mm/s之板位移的條件實行。其後，樣品被浸於一烘烤器內之水中，此烘烤器被置於一超音波清潔器之水浴內1分鐘，然後，以乾淨水沖洗。經乾燥之塗層見到於PET膜之相反側上以印刷銀阻絕之區域奈米粒子被完全移除，且留下塗層之端緣精確地反應印刷銀之端 緣(以圖6之舉例顯示)。於後熱銀火之後，留下之塗層被測得係高導電性。
於另一範例(範例4)，一銀奈米粒子糊料(Advanced Nano Product Co.之ANP-NRC-140812)以α-萜品醇稀釋，且使用一玻璃管噴灑塗覆於在其另一側上印刷一銀圖案之PET膜(ST 505 of Dupont)上。於65℃乾燥後，塗層曝露於光子固化R&D系統(Xenon公司之Sinteron 2000)，印刷銀圖案面朝上，且此塗層面朝下。曝光係於2.8kV，以300微秒連續曝光，及1mm/s之板位移的條件實行。其後，樣品浸於一烘烤器內之甲醇中，此烘烤器被置於一超音波清潔器之水浴內10分鐘，然後，以乾淨甲醇沖洗。經乾燥之塗層見到奈米粒子自其基材之相反側上以印刷銀阻絕之區域完全移除，且留下塗層之端緣精確地反映印刷銀之端緣(以圖7之舉例顯示)。
進一步測試顯示當預先存在之金屬圖案層置於基材之與金屬奈米粒子相同之側上時，上述程序係更佳地操作。於範例5，300nm厚之PMMA係使用一PMMA溶液(Mw=120000，於乙酸丁酯溶液)直接旋轉塗覆於具有一印刷銀圖案之PET(Dupont之ST 505)的表面上，且於高溫乾燥。於PMMA層上，銀奈米墨水(Sunjet之EMD5603 from)係使用一玻璃管噴灑塗覆。經乾燥之塗層曝露於光子固化R&D系統(Xenon公司之Sinteron 2000)，裸PET面朝上，且新塗層面朝下。曝光係於2.6kV，以200微秒連續曝光，及1mm/s之板位移的條件實行。於水中藉由超音波輔助顯影 後，於預先存在之銀圖案上的奈米粒子被完全移除，且經曝光之粒子留下，已藉由光部份燒結。此二層之端緣彼此精確地相配，以圖8之舉例顯示。奈米粒子均勻沉積於預先存在之銀線的窄間隙內(如圖8A所描述)。於此情況獲得之奈米粒子塗層圖案具有比於預先存在之銀圖案係於PET膜之另一側上時之圖案(圖6)具有更佳端緣品質。
上述結果亦藉由另一奈米粒子樣品驗證。於範例6，一300nm厚之PMMA層係先以上述一程序沉積於具有一印刷銀圖案之PET表面上，且Advanced Nano Product Co.銀(ANP-NRC-140812)係使用一玻璃管以稍早所述之程序噴灑塗覆於PMMA上。經乾燥之塗層曝露於光子固化R&D系統(Xenon公司之Sinteron 2000)，裸PET面朝上，且新塗層面朝下，且於2.8kV，以300微秒連續曝光，1mm/s之板位移的條件。其後，樣品於乙醇中藉由超音波輔助而顯影。圖9顯示獲得之銀奈米粒子塗層的圖案具有比當預先存在之銀圖案係於PET膜之另一側時(如範例4)更銳之端緣。
上述改良解析度大部份係由於降低之光繞射。當PET膜係170μm厚且用於曝光之光源於裝置中未瞄準，預先存在之銀圖案遮蔽的光會繞射至PET膜之另一側上的奈米粒子塗層的其它區域內。當塗層位於圖案層上且具有僅300nm厚之一中間層，此繞射大量減少。鑑於許多電子裝置係以具有一薄的中間層使二導電層分隔之一基構為基礎，且於此等層間需要高解析對準，本方法會極良好地操作。
對於可印刷電子設備，所欲地係能僅於一所欲區域精確地印刷此材料。於範例7，本方法係於自對準銀線印刷作示範。Sunjet之銀奈米墨水(EMD5603)係如範例5所述般，使用Damatix之一噴墨列印機(DMP5005)，以平行線印刷於以PMMA覆蓋之表面上。經乾燥之線(200nm厚)曝露於光子固化R&D系統(Xenon公司之Sinteron 2000)，裸PET面朝上，且印刷線面朝下，條件係2.6kV，200微秒連續曝光，及1mm/s板位移。於水中顯影後，於預先存在之銀圖案上的奈米粒子被完全移除，且剩餘之經部份燒結的粒子留下。圖10A顯示一印刷線橫過二預先存在之銀線的區域。於此線之材料在底下具有預先存在之銀線的區域被移除，造成相似於一頂閘極電晶體或一底閘極電晶體之結構。圖10B顯示印刷線之蝕刻端緣係與預先存在之銀線的線端緣精確地相配，因此，證實此處揭露之自對準技術可用於製造用於一可印刷電子裝置之高精確對準層。
金屬沉積之自對準傳統上對於印刷電子裝置係具有挑戰性。雖然數種習知技藝方法已被報導，此等係需要複雜之一預圖案化程序或缺乏可靠性，使其等不適於被擴大用於製造或生產。相反地，本方法係簡單、可靠，且耐用，且係適於小規模製造及大量生產可印刷電子裝置。
由前述說明，明顯地係本方法提供一第一層與一第二層之自對準。如上所示，此用於使層對準之方法係可用於製造一多層可印刷電子裝置。第一層及第二層可以導電性金屬奈米粒子墨水印刷，形成一底閘極或頂閘極電晶 體之部份。
一般，此方法可被綜述為包含下列步驟．動作，或操作：提供其上沉積之一第一金屬層之一透明基材，於第一金屬層上提供一透明功能層(諸如，一介電層或一半導層)，使金屬奈米粒子沉積於功能層上形成一第二金屬層，使金屬奈米粒子曝露於經過基材的底面之強烈脈衝光，以使經曝光之粒子與功能層部份燒結，藉此，使第一金屬層作為一光遮罩，及使用一溶劑清洗掉未經曝光之粒子，而使經部份燒結之金屬奈米粒子留在基材上。然後，經部份燒結之粒子可被後燒結，以便使此等粒子與基材完全燒結。後燒結可藉由光子燒結或熱處理(退火)完成。清洗可藉由使經部份燒結之粒子曝露於超音波而促進。於此方法之一實施例，一載負粒子之溶劑係於使粒子曝露於強烈脈衝光前先被蒸發。
於一實施例，基材係一聚對苯二甲酸乙二酯(PET)膜，且金屬奈米粒子係銀奈米粒子。基於上述測試結果及範例，合乎情理地係其它金屬奈米墨水及其它基材可用以達成實質上相似之自對準結果。基材可另外為一聚萘二甲酸乙二酯(PEN)膜、一聚醯亞胺膜、一聚碳酸酯膜，或玻璃。粒子可另外為金、銅，或鋁。部份燒結可以具有300至900nm之波長的脈衝光，1kV-3kV之電壓位準，及100-1000微秒之曝光時間達成。
需瞭解單數型式“一種”、“一個”及“此”係包含複數個提及者，除非上下文明確作其它指示。因此，例如， 提及“一裝置”係包括提及一或多個此等裝置，即，具有至少一裝置。術語“包含”、“具有”、“包括”，及“含有”可解釋為一開放式術語(即，意指“不受限地包括”)，除非作其它指示。此處所述之所有方法可以任何適合順序實施，除非於此處作其它指示或與上下文明確抵觸。範例或例示用語(例如，”諸如”)之使用僅係意圖更佳地例示或說明本發明實施例，且非意圖限制本發明之範圍，除非其它主張。
上述本發明實施例僅係意圖作為例示。如熟習說明書所述及之技藝者所瞭解，許多明顯的改變、修飾，及改良可於未偏離此處揭露之本發明技術思想下對此處呈現之實施例進行。因此，申請人尋求之排它權的範圍係意圖僅受所附申請專利範圍限制。
10:透明基材
12:第一金屬層
14:透明功能層
16:第二金屬層
18:經部份燒結之粒子

Claims (21)

  1. 一種用於在製造一多層可印刷電子裝置對準金屬層之方法，該方法包含：提供於上沉積一第一金屬層之一透明基材；於該第一金屬層上提供一透明功能層；於該透明功能層上沉積金屬奈米粒子以形成一第二金屬層；使該等金屬奈米粒子曝露於通過該基材之底面的強烈脈衝光，以使經曝光之粒子與該透明功能層部份燒結，藉此使該第一金屬層作為一光遮罩；及使用一溶劑清洗掉未經曝光之粒子，而使經部份燒結之金屬奈米粒子留於該基材上。
  2. 如請求項1之方法，進一步包含使該等經部份燒結之粒子後燒結，而於該基材上形成經完全燒結之金屬。
  3. 如請求項1之方法，其中，一粒子載負溶劑係於該等粒子曝露於該強烈脈衝光之前被蒸發。
  4. 如請求項1至3中任一項之方法，其中，該基材係一聚對苯二甲酸乙二酯(PET)膜。
  5. 如請求項1至3中任一項之方法，其中，該基材係一聚萘二甲酸乙二酯(PEN)膜。
  6. 如請求項1至3中任一項之方法，其中，該基材係一聚醯亞胺膜。
  7. 如請求項1至3中任一項之方法，其中，該基材係一聚碳 酸酯膜。
  8. 如請求項1至3中任一項之方法，其中，該基材係玻璃。
  9. 如請求項1至3中任一項之方法，其中，該等粒子係銀。
  10. 如請求項1至3中任一項之方法，其中，該等粒子係金、銅，及鋁之一者。
  11. 如請求項1至3中任一項之方法，其中，該透明功能層係一介電層。
  12. 如請求項1至3中任一項之方法，其中，該透明功能層係一半導層。
  13. 如請求項1至3中任一項之方法，其中，該脈衝光之電壓位準係1kV-3kV。
  14. 如請求項1至3中任一項之方法，其中，該脈衝光之總曝光時間係100-1000微秒。
  15. 如請求項1至3中任一項之方法，其中，該脈衝光之波長係300至900nm。
  16. 如請求項1至3中任一項之方法，其中，該清洗係於超音波存在中實施。
  17. 如請求項16之方法，其中，該清洗係於諸如一烘烤器之一容器中實施。
  18. 如請求項2之方法，其中，該後燒結包含退火。
  19. 如請求項2之方法，其中，該後燒結包含光子燒結。
  20. 如請求項1至3中任一項之方法，其中，該第一及第二金屬層形成一底閘極或頂閘極電晶體之部份。
  21. 如請求項1至3中任一項之方法，其中，曝光以部份燒結 包含使該等粒子曝露於一最小需要之光功率，以使該等粒子與該透明功能層最小連接，而於該清洗步驟期間抵抗清洗。
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