JP2018502455A - 焼結性接合材料およびそれを用いた半導体装置 - Google Patents
焼結性接合材料およびそれを用いた半導体装置 Download PDFInfo
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- JP2018502455A JP2018502455A JP2017534360A JP2017534360A JP2018502455A JP 2018502455 A JP2018502455 A JP 2018502455A JP 2017534360 A JP2017534360 A JP 2017534360A JP 2017534360 A JP2017534360 A JP 2017534360A JP 2018502455 A JP2018502455 A JP 2018502455A
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- 150000002334 glycols Chemical class 0.000 description 1
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- CFUKEHPEQCSIOM-UHFFFAOYSA-N n-[dimethylamino-ethylimino-[[tris(dimethylamino)-$l^{5}-phosphanylidene]amino]-$l^{5}-phosphanyl]-n-methylmethanamine Chemical compound CCN=P(N(C)C)(N(C)C)N=P(N(C)C)(N(C)C)N(C)C CFUKEHPEQCSIOM-UHFFFAOYSA-N 0.000 description 1
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- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
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- XNGYKPINNDWGGF-UHFFFAOYSA-L silver oxalate Chemical compound [Ag+].[Ag+].[O-]C(=O)C([O-])=O XNGYKPINNDWGGF-UHFFFAOYSA-L 0.000 description 1
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- 239000003381 stabilizer Substances 0.000 description 1
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- NMOALOSNPWTWRH-UHFFFAOYSA-N tert-butyl 7,7-dimethyloctaneperoxoate Chemical compound CC(C)(C)CCCCCC(=O)OOC(C)(C)C NMOALOSNPWTWRH-UHFFFAOYSA-N 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- KGKNBDYZZIBZQL-UHFFFAOYSA-N tert-butyl carboxyoxy carbonate Chemical compound CC(C)(C)OC(=O)OOC(O)=O KGKNBDYZZIBZQL-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J115/00—Adhesives based on rubber derivatives
- C09J115/02—Rubber derivatives containing halogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
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- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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Abstract
Description
銀フィラーは、本発明の接合材料の主成分である。加熱によって一緒に接合材料ヒューズ(焼結)中に銀フィラーは銀焼結体を形成し、それによって優れた熱伝導性と接合強度を有する接合層が形成される。
モード:コンタクトモード
カンチレバー:オリンパス製OMCL−TR800PSA−1
高さ方向分解能:0.01nm
横方向解像度:0.2nm
樹脂粒子は、低モジュラス部分、すなわち接合層中の銀成分のマトリックスより柔軟な部分を形成し、それによって接合層の応力緩和能力を増大させる。
試験片:直径25mm、厚さ12.5mm
圧縮速度:10±1mm/分
測定温度:25℃
試験片を25%の圧縮歪で4回圧縮し、圧縮力と歪みとの関係を記録する。得られた4回目の圧縮/圧縮曲線から、弾性率(E)を次式により算出する:
弾性率(E)(MPa)=F/A・ε
ここで、「F」は圧縮力(N)、「A」は試験片本来の断面積(mm2)、「ε」は試験片の変形量を示す。
−(−Si(R1)2−O−)n− (1)
(R1)SiO3/2
[式中、R1の定義は前記式(1)と同じであり、R1の50モル%以上がメチル基であることがより好ましい。]
本発明の接合材料は、添加剤をさらに含むことができる。添加剤としては、加熱中の銀フィラーの焼結を促進することができる焼結促進剤を挙げることができる。焼結促進剤としては、特に限定されず、銀フィラーとの組み合わせ等を考慮して適宜選択することができる。
本発明の接合材料は、さらに、接合材の焼結温度以下で気化または消滅する溶媒を含むことができる。
2.別の末端に結合領域の一方の端から面以上の10枚のSEM画像を撮ります。
3.顕微鏡にイメージをインポートし、画像における空隙を輝度抽出により抽出し、および空隙の面積の割合を計算する。
結合領域の気孔率は、取り込まれたイメージの気孔の平均値として算出される。
接合すべき2つの部材を供給する工程;
2つの部材の結合すべき表面が、その間に配置される本発明の接合材料と互いに対向するように2つの部材と接合材料を配置する工程;および
2つの部材をその間に配置された接合材料と共に所定の温度に加熱する工程。
半導体チップは、特に限定されない。その例としては、SiチップとSiCチップが挙げられるが、これらに限定されない。半導体チップの裏面(接合される面)は、好ましくは、銀、銅、ニッケル、金等で金属メッキされる。半導体チップの形状の例としては、特に限定されないが、正方形および約2mm〜約15mmの高さおよび幅を有する矩形が挙げられるが、これらに限定されない。
本実施形態の半導体装置の製造方法は、以下の工程を含む。
(1)基材上に本発明の接合材料を適用する工程、
(2)基材上に半導体チップを配置する工程、および
(3)半導体チップが載置された基材を加熱する工程。
上記工程(2)においては、公知の方法を、基板上(実装)半導体チップを配置するための方法として使用することができる。上記工程(2)は、半導体チップを配置する工程、および適用接合材料の厚さ等を調整する工程を含むことができる。
上記工程(3)において、加熱の方法は、適切に接着材料または接合される部材に応じて選択することができる。
乾燥工程:90℃以上、15分以上
焼結温度:250℃以上、例えば300℃
圧力:10MPa以上
時間:3分〜5分
<銀フィラー>
銀フィラー1:
フレーク状フィラー(アスペクト比=20〜200、Ra≦10nm)と球状フィラーの混合物、D50=0.45μm
銀フィラー2:
球状フィラー、D50=2.1μm、
比表面積=0.9mm2、TAP密度=5.1g/cm3
<樹脂粒子>
樹脂1:球状シリコーンパウダー(X−52−7030、信越シリコーン社製)、D50=5μm
<添加剤>
パーブチルD(ジ−tert−ブチルペルオキシド)
DBU(1,8−ジアザビシクロ[5.4.0]ウンデス−7−エン)
<溶媒>
BCA(ブチルカルビトールアセテート)
BC(ブチルカルビトール)
DPG(ジプロピレングリコール)
<接合材料の作製>
表1に示す割合で銀フィラー、樹脂粒子、添加剤、溶剤を混合して接合材料を調製した。
得られた接合材料を100μmの厚さで印刷した(銀メッキ銅リードフレーム、25×25mm、0.3mmの厚さ)。半導体チップ(裏面銀メッキSiダイ、10×10mm)を基材に実装した。チップ付き基材を90℃で30分間乾燥させた後、オーブンで300℃/5分/10MPaの条件で加熱して評価用試験片を得た。焼結後の接合層の厚さは約40〜60μmであった。
得られた試験片を京都電子工業LFA−502に入れ、熱拡散率(α(m2/s))、比熱容量(c(J/gK))を測定して厚み方向の熱伝導率を求めた。室温(23±1℃)での材料密度(ρ(kg/cm3))と熱伝導率(λ(W/mK))は、λ=αcρの関係で計算した。
得られた接合材を基材(銀メッキ銅DBC、25×25mm、厚さ1mm)上に100μmの厚さで印刷した。基材上に半導体チップ(裏面銀めっきSiダイ、5×5mm)を実装した。チップ付基材を90℃で30分間乾燥させた後、オーブンで300℃/5分/10MPaの条件で加熱して評価用試験片を得た。
1.試験片の研磨:
デバイス:BUEHLERベータグラインダー−ポリッシャー60−1990
研磨紙:ストルアスSiCペーパー#120、#220、#500、#800、#1200、#2000
バフ:ストルアスDP−ナップサイズ:200mm径
ダイヤモンドスプレー:ストルアスDP−スプレーP1μm、1/4μm
試験片を研磨紙#120、#220、#500、#800、#1200、#2000、バフ、ダイヤモンドスプレー1μm、1/4μmの順で研磨し、ボンディングの横断面を露出した。
2.SEMイメージング:接合層の横断面のSEM画像は、走査型電子顕微鏡(HITACHI S−3000、倍率=2000倍、1280×960解像度、接合領域の右端から左端の15イメージ)を使用して撮影した。
3.気孔率の計算:得られた画像を、顕微鏡(キーエンスデジタルマイクロスコープVHX−500)へインポートし、空隙は、輝度抽出によって抽出し、気孔率を画像における空隙の面積の割合として決定した。平均気孔率は15枚の画像の気孔率を平均して算出した。
表1に示す割合で、銀フィラー、樹脂粒子、添加剤、溶剤を混合して接合材を作製した。得られた接合材を実施例1と同様に評価した。その結果を表1、および図2および図4に示す。
表1に示す割合で、銀フィラー、樹脂粒子、添加剤、溶剤を混合して接合材を作製した。得られた接合材を実施例1と同様に評価した。その結果を表1、および図2および図4に示す。
表1に示す割合の銀フィラー、樹脂粒子、添加剤及び溶剤と、液状エポキシ樹脂(イミダゾールを含むビスフェノールA型エポキシ樹脂)とを、接着材の全質量の1.0質量%を混合して接合材を作製した。得られた接合材を実施例1と同様に評価した。その結果を表1および図3に示す。
2、2’:接合層
3:基材の金属表面
4:基材
5:冷却板
Claims (11)
- 銀フィラーと樹脂粒子とを含み、
銀フィラーは、算術平均粗さ(Ra)が10nm以下のフレーク状フィラーを含み、および
樹脂粒子は、弾性率(E)が10GPa以下および熱分解温度が200℃以上である、
焼結性接合材料。 - 銀フィラーの含有量は、接合材料の固形分全質量の90質量%以上99.9質量%以下である、請求項1に記載の焼結性接合材料。
- 樹脂粒子の弾性率(E)は、100MPa以下である、請求項1または2に記載の焼結性接合材料。
- 樹脂粒子は、シリコーンゴム粒子および/またはフッ素ゴム粒子を含む、請求項1〜3のいずれかに記載の焼結性接合材料。
- 銀フィラーは、結晶質フレーク状フィラーを含む、請求項1〜4のいずれかに記載の焼結性接合材料。
- 添加剤をさらに含む、請求項1〜5のいずれかに記載の焼結性接合材料。
- 溶媒をさらに含む、請求項1〜6のいずれかに記載の焼結性接合材料。
- 弾性率(E)が10GPa以下であり、熱分解温度が200℃以上である樹脂粒子を分散してなる銀焼結体。
- 平均気孔率が10%以下である、請求項8に記載の銀焼結体。
- 請求項8または9のいずれかに記載の銀焼結体により接合された接合体。
- 半導体装置の製造方法であって、
接合される2つの部材を与える工程、
前記2つの部材と前記接合材とを配置して前記2つの部材の接合面が前記接合材料を介して対向する工程、および
2つの部材をその間に配置された接合材料と共に所定の温度に加熱する工程
を含み、
接合材料は、銀フィラーと樹脂粒子とを含む焼結性接合材料であり、
銀フィラーは、算術平均粗さ(Ra)が10nm以下のフレーク状フィラーを含み、
樹脂粒子は、弾性率(E)が10GPa以下、および熱分解温度が200℃以上である、製造方法。
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CN107735854B (zh) | 2020-12-15 |
EP3238239A1 (en) | 2017-11-01 |
TW201628103A (zh) | 2016-08-01 |
KR20170101276A (ko) | 2017-09-05 |
JP6571196B2 (ja) | 2019-09-04 |
KR102226649B1 (ko) | 2021-03-10 |
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