TW201628103A - 可燒結黏結材料及使用其之半導體裝置 - Google Patents
可燒結黏結材料及使用其之半導體裝置 Download PDFInfo
- Publication number
- TW201628103A TW201628103A TW104141663A TW104141663A TW201628103A TW 201628103 A TW201628103 A TW 201628103A TW 104141663 A TW104141663 A TW 104141663A TW 104141663 A TW104141663 A TW 104141663A TW 201628103 A TW201628103 A TW 201628103A
- Authority
- TW
- Taiwan
- Prior art keywords
- bonding material
- silver
- filler
- less
- resin
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 86
- 239000004065 semiconductor Substances 0.000 title claims description 53
- 239000000945 filler Substances 0.000 claims abstract description 117
- 239000002245 particle Substances 0.000 claims abstract description 96
- 229920005989 resin Polymers 0.000 claims abstract description 94
- 239000011347 resin Substances 0.000 claims abstract description 94
- 229910052709 silver Inorganic materials 0.000 claims abstract description 89
- 239000004332 silver Substances 0.000 claims abstract description 89
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 88
- 238000010438 heat treatment Methods 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000000654 additive Substances 0.000 claims description 13
- 230000000996 additive effect Effects 0.000 claims description 11
- 229920001971 elastomer Polymers 0.000 claims description 9
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 229920001973 fluoroelastomer Polymers 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 230000007774 longterm Effects 0.000 abstract description 11
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- -1 alkane polyol Chemical class 0.000 description 72
- 239000000758 substrate Substances 0.000 description 49
- 239000010410 layer Substances 0.000 description 33
- 238000005245 sintering Methods 0.000 description 28
- 235000012431 wafers Nutrition 0.000 description 27
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 230000035882 stress Effects 0.000 description 22
- 238000000034 method Methods 0.000 description 20
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 19
- 239000012790 adhesive layer Substances 0.000 description 16
- 125000004432 carbon atom Chemical group C* 0.000 description 14
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical group [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 14
- GQHTUMJGOHRCHB-UHFFFAOYSA-N 2,3,4,6,7,8,9,10-octahydropyrimido[1,2-a]azepine Chemical compound C1CCCCN2CCCN=C21 GQHTUMJGOHRCHB-UHFFFAOYSA-N 0.000 description 13
- 239000000126 substance Substances 0.000 description 10
- 239000002253 acid Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 235000014113 dietary fatty acids Nutrition 0.000 description 9
- 239000000194 fatty acid Substances 0.000 description 9
- 229930195729 fatty acid Natural products 0.000 description 9
- 150000004665 fatty acids Chemical class 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 239000011230 binding agent Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 150000002978 peroxides Chemical class 0.000 description 7
- 229910001923 silver oxide Inorganic materials 0.000 description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229920001519 homopolymer Polymers 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000006835 compression Effects 0.000 description 5
- 238000007906 compression Methods 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 4
- OAOABCKPVCUNKO-UHFFFAOYSA-N 8-methyl Nonanoic acid Chemical compound CC(C)CCCCCCC(O)=O OAOABCKPVCUNKO-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 4
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 235000003441 saturated fatty acids Nutrition 0.000 description 4
- 150000004671 saturated fatty acids Chemical class 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- SJRJJKPEHAURKC-UHFFFAOYSA-N N-Methylmorpholine Chemical compound CN1CCOCC1 SJRJJKPEHAURKC-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000003973 alkyl amines Chemical class 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- MHPUGCYGQWGLJL-UHFFFAOYSA-N dimethyl pentanoic acid Natural products CC(C)CCCC(O)=O MHPUGCYGQWGLJL-UHFFFAOYSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 150000001451 organic peroxides Chemical class 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 3
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 3
- 125000005270 trialkylamine group Chemical group 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- OEBXWWBYZJNKRK-UHFFFAOYSA-N 1-methyl-2,3,4,6,7,8-hexahydropyrimido[1,2-a]pyrimidine Chemical compound C1CCN=C2N(C)CCCN21 OEBXWWBYZJNKRK-UHFFFAOYSA-N 0.000 description 2
- ULQISTXYYBZJSJ-UHFFFAOYSA-N 12-hydroxyoctadecanoic acid Chemical compound CCCCCCC(O)CCCCCCCCCCC(O)=O ULQISTXYYBZJSJ-UHFFFAOYSA-N 0.000 description 2
- XDOFQFKRPWOURC-UHFFFAOYSA-N 16-methylheptadecanoic acid Chemical compound CC(C)CCCCCCCCCCCCCCC(O)=O XDOFQFKRPWOURC-UHFFFAOYSA-N 0.000 description 2
- YOYAIZYFCNQIRF-UHFFFAOYSA-N 2,6-dichlorobenzonitrile Chemical compound ClC1=CC=CC(Cl)=C1C#N YOYAIZYFCNQIRF-UHFFFAOYSA-N 0.000 description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 2
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 2
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000005233 alkylalcohol group Chemical group 0.000 description 2
- 125000005263 alkylenediamine group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000001414 amino alcohols Chemical class 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 235000006708 antioxidants Nutrition 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- ZQPPMHVWECSIRJ-MDZDMXLPSA-N elaidic acid Chemical compound CCCCCCCC\C=C\CCCCCCCC(O)=O ZQPPMHVWECSIRJ-MDZDMXLPSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 125000001188 haloalkyl group Chemical group 0.000 description 2
- KEMQGTRYUADPNZ-UHFFFAOYSA-N heptadecanoic acid Chemical compound CCCCCCCCCCCCCCCCC(O)=O KEMQGTRYUADPNZ-UHFFFAOYSA-N 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- SIOLDWZBFABPJU-UHFFFAOYSA-N isotridecanoic acid Chemical compound CC(C)CCCCCCCCCC(O)=O SIOLDWZBFABPJU-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 150000002923 oximes Chemical group 0.000 description 2
- SECPZKHBENQXJG-FPLPWBNLSA-N palmitoleic acid Chemical compound CCCCCC\C=C/CCCCCCCC(O)=O SECPZKHBENQXJG-FPLPWBNLSA-N 0.000 description 2
- 229920013653 perfluoroalkoxyethylene Polymers 0.000 description 2
- 125000002081 peroxide group Chemical group 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920005862 polyol Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- XXQBEVHPUKOQEO-UHFFFAOYSA-N potassium superoxide Chemical compound [K+].[K+].[O-][O-] XXQBEVHPUKOQEO-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000005871 repellent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 125000001424 substituent group Chemical group 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- SZHOJFHSIKHZHA-UHFFFAOYSA-N tridecanoic acid Chemical compound CCCCCCCCCCCCC(O)=O SZHOJFHSIKHZHA-UHFFFAOYSA-N 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- ZDPHROOEEOARMN-UHFFFAOYSA-N undecanoic acid Chemical compound CCCCCCCCCCC(O)=O ZDPHROOEEOARMN-UHFFFAOYSA-N 0.000 description 2
- 235000021122 unsaturated fatty acids Nutrition 0.000 description 2
- 150000004670 unsaturated fatty acids Chemical class 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- GWHCXVQVJPWHRF-KTKRTIGZSA-N (15Z)-tetracosenoic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCCCC(O)=O GWHCXVQVJPWHRF-KTKRTIGZSA-N 0.000 description 1
- OBETXYAYXDNJHR-SSDOTTSWSA-M (2r)-2-ethylhexanoate Chemical compound CCCC[C@@H](CC)C([O-])=O OBETXYAYXDNJHR-SSDOTTSWSA-M 0.000 description 1
- OYHQOLUKZRVURQ-NTGFUMLPSA-N (9Z,12Z)-9,10,12,13-tetratritiooctadeca-9,12-dienoic acid Chemical compound C(CCCCCCC\C(=C(/C\C(=C(/CCCCC)\[3H])\[3H])\[3H])\[3H])(=O)O OYHQOLUKZRVURQ-NTGFUMLPSA-N 0.000 description 1
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- QXJSBBXBKPUZAA-CMDGGOBGSA-N (e)-octadec-10-enoic acid Chemical compound CCCCCCC\C=C\CCCCCCCCC(O)=O QXJSBBXBKPUZAA-CMDGGOBGSA-N 0.000 description 1
- LNOLJFCCYQZFBQ-BUHFOSPRSA-N (ne)-n-[(4-nitrophenyl)-phenylmethylidene]hydroxylamine Chemical compound C=1C=C([N+]([O-])=O)C=CC=1C(=N/O)/C1=CC=CC=C1 LNOLJFCCYQZFBQ-BUHFOSPRSA-N 0.000 description 1
- NALFRYPTRXKZPN-UHFFFAOYSA-N 1,1-bis(tert-butylperoxy)-3,3,5-trimethylcyclohexane Chemical group CC1CC(C)(C)CC(OOC(C)(C)C)(OOC(C)(C)C)C1 NALFRYPTRXKZPN-UHFFFAOYSA-N 0.000 description 1
- SPTHWAJJMLCAQF-UHFFFAOYSA-N 1,2-di(propan-2-yl)benzene;hydrogen peroxide Chemical compound OO.CC(C)C1=CC=CC=C1C(C)C SPTHWAJJMLCAQF-UHFFFAOYSA-N 0.000 description 1
- WGYZMNBUZFHYRX-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-ol Chemical compound COCC(C)OCC(C)O WGYZMNBUZFHYRX-UHFFFAOYSA-N 0.000 description 1
- JMGNVALALWCTLC-UHFFFAOYSA-N 1-fluoro-2-(2-fluoroethenoxy)ethene Chemical compound FC=COC=CF JMGNVALALWCTLC-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- AVFZOVWCLRSYKC-UHFFFAOYSA-N 1-methylpyrrolidine Chemical compound CN1CCCC1 AVFZOVWCLRSYKC-UHFFFAOYSA-N 0.000 description 1
- ZKEUVTROUPQVTM-UHFFFAOYSA-N 1-pentylperoxypentane Chemical group CCCCCOOCCCCC ZKEUVTROUPQVTM-UHFFFAOYSA-N 0.000 description 1
- FRPZMMHWLSIFAZ-UHFFFAOYSA-N 10-undecenoic acid Chemical compound OC(=O)CCCCCCCCC=C FRPZMMHWLSIFAZ-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- IHWDSEPNZDYMNF-UHFFFAOYSA-N 1H-indol-2-amine Chemical compound C1=CC=C2NC(N)=CC2=C1 IHWDSEPNZDYMNF-UHFFFAOYSA-N 0.000 description 1
- HQOVXPHOJANJBR-UHFFFAOYSA-N 2,2-bis(tert-butylperoxy)butane Chemical compound CC(C)(C)OOC(C)(CC)OOC(C)(C)C HQOVXPHOJANJBR-UHFFFAOYSA-N 0.000 description 1
- MUOYRBYBTJDAOT-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-yl 2,2-dimethylpropaneperoxoate Chemical group CC(C)(C)CC(C)(C)OOC(=O)C(C)(C)C MUOYRBYBTJDAOT-UHFFFAOYSA-N 0.000 description 1
- CRJIYMRJTJWVLU-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-yl 3-(5,5-dimethylhexyl)dioxirane-3-carboxylate Chemical compound CC(C)(C)CCCCC1(C(=O)OC(C)(C)CC(C)(C)C)OO1 CRJIYMRJTJWVLU-UHFFFAOYSA-N 0.000 description 1
- DPGYCJUCJYUHTM-UHFFFAOYSA-N 2,4,4-trimethylpentan-2-yloxy 2-ethylhexaneperoxoate Chemical group CCCCC(CC)C(=O)OOOC(C)(C)CC(C)(C)C DPGYCJUCJYUHTM-UHFFFAOYSA-N 0.000 description 1
- QNLVSEVOEORLBH-UHFFFAOYSA-N 2,5-bis(2-ethylhexylperoxy)-2,5-dimethylhexane Chemical group CCCCC(CC)COOC(C)(C)CCC(C)(C)OOCC(CC)CCCC QNLVSEVOEORLBH-UHFFFAOYSA-N 0.000 description 1
- DMWVYCCGCQPJEA-UHFFFAOYSA-N 2,5-bis(tert-butylperoxy)-2,5-dimethylhexane Chemical compound CC(C)(C)OOC(C)(C)CCC(C)(C)OOC(C)(C)C DMWVYCCGCQPJEA-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- 229940058020 2-amino-2-methyl-1-propanol Drugs 0.000 description 1
- OARDBPIZDHVTCK-UHFFFAOYSA-N 2-butyloctanoic acid Chemical compound CCCCCCC(C(O)=O)CCCC OARDBPIZDHVTCK-UHFFFAOYSA-N 0.000 description 1
- LLDBOMNUMJVCBX-UHFFFAOYSA-N 2-butylperoxypropan-2-yl hydrogen carbonate Chemical group CCCCOOC(C)(C)OC(O)=O LLDBOMNUMJVCBX-UHFFFAOYSA-N 0.000 description 1
- TWJNQYPJQDRXPH-UHFFFAOYSA-N 2-cyanobenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C#N TWJNQYPJQDRXPH-UHFFFAOYSA-N 0.000 description 1
- ZACVGCNKGYYQHA-UHFFFAOYSA-N 2-ethylhexoxycarbonyloxy 2-ethylhexyl carbonate Chemical group CCCCC(CC)COC(=O)OOC(=O)OCC(CC)CCCC ZACVGCNKGYYQHA-UHFFFAOYSA-N 0.000 description 1
- MIRQGKQPLPBZQM-UHFFFAOYSA-N 2-hydroperoxy-2,4,4-trimethylpentane Chemical compound CC(C)(C)CC(C)(C)OO MIRQGKQPLPBZQM-UHFFFAOYSA-N 0.000 description 1
- JJRDRFZYKKFYMO-UHFFFAOYSA-N 2-methyl-2-(2-methylbutan-2-ylperoxy)butane Chemical compound CCC(C)(C)OOC(C)(C)CC JJRDRFZYKKFYMO-UHFFFAOYSA-N 0.000 description 1
- XWKFPIODWVPXLX-UHFFFAOYSA-N 2-methyl-5-methylpyridine Natural products CC1=CC=C(C)N=C1 XWKFPIODWVPXLX-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- MFHYZHQSCYJZEV-UHFFFAOYSA-N 2-pentyldecanoic acid Chemical compound CCCCCCCCC(C(O)=O)CCCCC MFHYZHQSCYJZEV-UHFFFAOYSA-N 0.000 description 1
- RXGPYPPCEXISOV-UHFFFAOYSA-N 2-propylheptanoic acid Chemical compound CCCCCC(C(O)=O)CCC RXGPYPPCEXISOV-UHFFFAOYSA-N 0.000 description 1
- VSCBATMPTLKTOV-UHFFFAOYSA-N 2-tert-butylimino-n,n-diethyl-1,3-dimethyl-1,3,2$l^{5}-diazaphosphinan-2-amine Chemical compound CCN(CC)P1(=NC(C)(C)C)N(C)CCCN1C VSCBATMPTLKTOV-UHFFFAOYSA-N 0.000 description 1
- QPIRYFWCAHUZTB-UHFFFAOYSA-N 3,5,5-trimethyl-1-(3,5,5-trimethylhexylperoxy)hexane Chemical compound CC(C)(C)CC(C)CCOOCCC(C)CC(C)(C)C QPIRYFWCAHUZTB-UHFFFAOYSA-N 0.000 description 1
- CARSMBZECAABMO-UHFFFAOYSA-N 3-chloro-2,6-dimethylbenzoic acid Chemical compound CC1=CC=C(Cl)C(C)=C1C(O)=O CARSMBZECAABMO-UHFFFAOYSA-N 0.000 description 1
- MWVTWFVJZLCBMC-UHFFFAOYSA-N 4,4'-bipyridine Chemical compound C1=NC=CC(C=2C=CN=CC=2)=C1 MWVTWFVJZLCBMC-UHFFFAOYSA-N 0.000 description 1
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 1
- KGYYLUNYOCBBME-UHFFFAOYSA-M 4-fluoro-2-phenyl-4-(4-propylcyclohexyl)cyclohexa-1,5-diene-1-carboxylate Chemical compound C1CC(CCC)CCC1C1(F)C=CC(C([O-])=O)=C(C=2C=CC=CC=2)C1 KGYYLUNYOCBBME-UHFFFAOYSA-M 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- AWQSAIIDOMEEOD-UHFFFAOYSA-N 5,5-Dimethyl-4-(3-oxobutyl)dihydro-2(3H)-furanone Chemical compound CC(=O)CCC1CC(=O)OC1(C)C AWQSAIIDOMEEOD-UHFFFAOYSA-N 0.000 description 1
- OEOIWYCWCDBOPA-UHFFFAOYSA-N 6-methyl-heptanoic acid Chemical compound CC(C)CCCCC(O)=O OEOIWYCWCDBOPA-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 1
- KXHLRGBHQWFLAZ-UHFFFAOYSA-N 8-methyloctadecane Chemical compound CCCCCCCCCCC(C)CCCCCCC KXHLRGBHQWFLAZ-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- VSAJTRPXXNCHGB-UHFFFAOYSA-N 9-methyl-decanoic acid Chemical compound CC(C)CCCCCCCC(O)=O VSAJTRPXXNCHGB-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Natural products OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 235000021357 Behenic acid Nutrition 0.000 description 1
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical compound N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- DPUOLQHDNGRHBS-UHFFFAOYSA-N Brassidinsaeure Natural products CCCCCCCCC=CCCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-UHFFFAOYSA-N 0.000 description 1
- 239000004343 Calcium peroxide Substances 0.000 description 1
- 239000005635 Caprylic acid (CAS 124-07-2) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- GHXZTYHSJHQHIJ-UHFFFAOYSA-N Chlorhexidine Chemical compound C=1C=C(Cl)C=CC=1NC(N)=NC(N)=NCCCCCCN=C(N)N=C(N)NC1=CC=C(Cl)C=C1 GHXZTYHSJHQHIJ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- URXZXNYJPAJJOQ-UHFFFAOYSA-N Erucic acid Natural products CCCCCCC=CCCCCCCCCCCCC(O)=O URXZXNYJPAJJOQ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- SPAGIJMPHSUYSE-UHFFFAOYSA-N Magnesium peroxide Chemical compound [Mg+2].[O-][O-] SPAGIJMPHSUYSE-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- 235000021360 Myristic acid Nutrition 0.000 description 1
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- AHVYPIQETPWLSZ-UHFFFAOYSA-N N-methyl-pyrrolidine Natural products CN1CC=CC1 AHVYPIQETPWLSZ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 235000021319 Palmitoleic acid Nutrition 0.000 description 1
- 244000131316 Panax pseudoginseng Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 229910020487 SiO3/2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- OBETXYAYXDNJHR-UHFFFAOYSA-N alpha-ethylcaproic acid Natural products CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001409 amidines Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000002583 angiography Methods 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000011668 ascorbic acid Substances 0.000 description 1
- 235000010323 ascorbic acid Nutrition 0.000 description 1
- 229960005070 ascorbic acid Drugs 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229940116226 behenic acid Drugs 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UOFFEDRAIFYOBS-UHFFFAOYSA-N butan-1-imine Chemical group CCCC=N UOFFEDRAIFYOBS-UHFFFAOYSA-N 0.000 description 1
- FSRYENDEMMDKMT-UHFFFAOYSA-N butoxy ethaneperoxoate Chemical group CCCCOOOC(C)=O FSRYENDEMMDKMT-UHFFFAOYSA-N 0.000 description 1
- ZGPBOPXFOJBLIV-UHFFFAOYSA-N butoxycarbonyloxy butyl carbonate Chemical group CCCCOC(=O)OOC(=O)OCCCC ZGPBOPXFOJBLIV-UHFFFAOYSA-N 0.000 description 1
- RHZIVIGKRFVETQ-UHFFFAOYSA-N butyl 2-methylpropaneperoxoate Chemical group CCCCOOC(=O)C(C)C RHZIVIGKRFVETQ-UHFFFAOYSA-N 0.000 description 1
- UPIWXMRIPODGLE-UHFFFAOYSA-N butyl benzenecarboperoxoate Chemical group CCCCOOC(=O)C1=CC=CC=C1 UPIWXMRIPODGLE-UHFFFAOYSA-N 0.000 description 1
- NHEUUFQZSIJBCY-UHFFFAOYSA-N butylperoxy 2-ethylhexyl carbonate Chemical group CCCCOOOC(=O)OCC(CC)CCCC NHEUUFQZSIJBCY-UHFFFAOYSA-N 0.000 description 1
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 description 1
- 235000019402 calcium peroxide Nutrition 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- KHAVLLBUVKBTBG-UHFFFAOYSA-N caproleic acid Natural products OC(=O)CCCCCCCC=C KHAVLLBUVKBTBG-UHFFFAOYSA-N 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- SFZULDYEOVSIKM-UHFFFAOYSA-N chembl321317 Chemical compound C1=CC(C(=N)NO)=CC=C1C1=CC=C(C=2C=CC(=CC=2)C(=N)NO)O1 SFZULDYEOVSIKM-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229960003260 chlorhexidine Drugs 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- SECPZKHBENQXJG-UHFFFAOYSA-N cis-palmitoleic acid Natural products CCCCCCC=CCCCCCCCC(O)=O SECPZKHBENQXJG-UHFFFAOYSA-N 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- VEVZSMAEJFVWIL-UHFFFAOYSA-O cyanidin Natural products [O+]=1C2=CC(O)=CC(O)=C2C=C(O)C=1C1=CC=C(O)C(O)=C1 VEVZSMAEJFVWIL-UHFFFAOYSA-O 0.000 description 1
- 235000007336 cyanidin Nutrition 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 150000003997 cyclic ketones Chemical class 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- IIRFCWANHMSDCG-UHFFFAOYSA-N cyclooctanone Chemical compound O=C1CCCCCCC1 IIRFCWANHMSDCG-UHFFFAOYSA-N 0.000 description 1
- 229960003843 cyproterone Drugs 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000012969 di-tertiary-butyl peroxide Substances 0.000 description 1
- MUJOVVKDDICVMS-UHFFFAOYSA-N diazaphosphinine Chemical compound C1=CN=NP=C1 MUJOVVKDDICVMS-UHFFFAOYSA-N 0.000 description 1
- DCOPUUMXTXDBNB-UHFFFAOYSA-N diclofenac Chemical compound OC(=O)CC1=CC=CC=C1NC1=C(Cl)C=CC=C1Cl DCOPUUMXTXDBNB-UHFFFAOYSA-N 0.000 description 1
- 229960001259 diclofenac Drugs 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940043237 diethanolamine Drugs 0.000 description 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 1
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 description 1
- 229940043276 diisopropanolamine Drugs 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- DPUOLQHDNGRHBS-KTKRTIGZSA-N erucic acid Chemical compound CCCCCCCC\C=C/CCCCCCCCCCCC(O)=O DPUOLQHDNGRHBS-KTKRTIGZSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- ZIUSEGSNTOUIPT-UHFFFAOYSA-N ethyl 2-cyanoacetate Chemical compound CCOC(=O)CC#N ZIUSEGSNTOUIPT-UHFFFAOYSA-N 0.000 description 1
- 229940044949 eucalyptus oil Drugs 0.000 description 1
- 239000010642 eucalyptus oil Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- LQJBNNIYVWPHFW-QXMHVHEDSA-N gadoleic acid Chemical compound CCCCCCCCCC\C=C/CCCCCCCC(O)=O LQJBNNIYVWPHFW-QXMHVHEDSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- ZRALSGWEFCBTJO-UHFFFAOYSA-N guanidine group Chemical group NC(=N)N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- JMOLZNNXZPAGBH-UHFFFAOYSA-N hexyldecanoic acid Chemical compound CCCCCCCCC(C(O)=O)CCCCCC JMOLZNNXZPAGBH-UHFFFAOYSA-N 0.000 description 1
- 229950004531 hexyldecanoic acid Drugs 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- QUPCNWFFTANZPX-UHFFFAOYSA-N hydrogen peroxide;1-methyl-4-propan-2-ylcyclohexane Chemical compound OO.CC(C)C1CCC(C)CC1 QUPCNWFFTANZPX-UHFFFAOYSA-N 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 125000001905 inorganic group Chemical group 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- YAQXGBBDJYBXKL-UHFFFAOYSA-N iron(2+);1,10-phenanthroline;dicyanide Chemical compound [Fe+2].N#[C-].N#[C-].C1=CN=C2C3=NC=CC=C3C=CC2=C1.C1=CN=C2C3=NC=CC=C3C=CC2=C1 YAQXGBBDJYBXKL-UHFFFAOYSA-N 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- TYQCGQRIZGCHNB-JLAZNSOCSA-N l-ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(O)=C(O)C1=O TYQCGQRIZGCHNB-JLAZNSOCSA-N 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- HPGPEWYJWRWDTP-UHFFFAOYSA-N lithium peroxide Chemical compound [Li+].[Li+].[O-][O-] HPGPEWYJWRWDTP-UHFFFAOYSA-N 0.000 description 1
- 229960004995 magnesium peroxide Drugs 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- PSHKMPUSSFXUIA-UHFFFAOYSA-N n,n-dimethylpyridin-2-amine Chemical compound CN(C)C1=CC=CC=N1 PSHKMPUSSFXUIA-UHFFFAOYSA-N 0.000 description 1
- GRPIQKZLNSCFTB-UHFFFAOYSA-N n-[bis(dimethylamino)-fluoroimino-$l^{5}-phosphanyl]-n-methylmethanamine Chemical compound CN(C)P(=NF)(N(C)C)N(C)C GRPIQKZLNSCFTB-UHFFFAOYSA-N 0.000 description 1
- KCXYZMFPZHYUFO-UHFFFAOYSA-N n-methyl-n-phosphanylmethanamine Chemical compound CN(C)P KCXYZMFPZHYUFO-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- KPADFPAILITQBG-UHFFFAOYSA-N non-4-ene Chemical compound CCCCC=CCCC KPADFPAILITQBG-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 229960002446 octanoic acid Drugs 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- WPPLKRDOKPISSC-UHFFFAOYSA-N pentyl 2,2-dimethylpropaneperoxoate Chemical group CCCCCOOC(=O)C(C)(C)C WPPLKRDOKPISSC-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000137 polyphosphoric acid Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- YPVDWEHVCUBACK-UHFFFAOYSA-N propoxycarbonyloxy propyl carbonate Chemical compound CCCOC(=O)OOC(=O)OCCC YPVDWEHVCUBACK-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- ROSDSFDQCJNGOL-UHFFFAOYSA-N protonated dimethyl amine Natural products CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- WBHHMMIMDMUBKC-XLNAKTSKSA-N ricinelaidic acid Chemical compound CCCCCC[C@@H](O)C\C=C\CCCCCCCC(O)=O WBHHMMIMDMUBKC-XLNAKTSKSA-N 0.000 description 1
- FEUQNCSVHBHROZ-UHFFFAOYSA-N ricinoleic acid Natural products CCCCCCC(O[Si](C)(C)C)CC=CCCCCCCCC(=O)OC FEUQNCSVHBHROZ-UHFFFAOYSA-N 0.000 description 1
- 229960003656 ricinoleic acid Drugs 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 102220043159 rs587780996 Human genes 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000010971 silver fill Substances 0.000 description 1
- XNGYKPINNDWGGF-UHFFFAOYSA-L silver oxalate Chemical compound [Ag+].[Ag+].[O-]C(=O)C([O-])=O XNGYKPINNDWGGF-UHFFFAOYSA-L 0.000 description 1
- 229960001922 sodium perborate Drugs 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- YKLJGMBLPUQQOI-UHFFFAOYSA-M sodium;oxidooxy(oxo)borane Chemical compound [Na+].[O-]OB=O YKLJGMBLPUQQOI-UHFFFAOYSA-M 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 229960004418 trolamine Drugs 0.000 description 1
- 229960002703 undecylenic acid Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/068—Flake-like particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J115/00—Adhesives based on rubber derivatives
- C09J115/02—Rubber derivatives containing halogen
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05647—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05655—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29139—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/2954—Coating
- H01L2224/29599—Material
- H01L2224/2969—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/8322—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/83222—Induction heating, i.e. eddy currents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83401—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/83411—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83439—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Conductive Materials (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
本發明之目的係提供一可燒結黏結材料,其能提供一具長期可靠度之黏結物件。本發明係有關一種可燒結黏結材料,其包含銀填料及樹脂顆粒,其中該銀填料包含片形填料,其算術平均粗糙度(Ra)係10nm或以下;以及該樹脂顆粒之彈性模數(E)係10Gpa或以下,且熱分解溫度係200℃或以上。本發明可燒結黏結材料之燒結產物之黏結強度及熱釋放特性極佳,且具改進之應力鬆弛能力。
Description
本發明係有關黏結材料,具體而言,係具極佳之應力鬆弛能力之可燒結黏結材料,及其製造方法。本發明係進一步有關藉使用黏結材料製造之半導體裝置,及其製造方法。
由於電子裝置之尺寸與重量減少及其效能改善,半導體裝置產生之熱量趨於增加。近年來,電動機控制領域發展出應用具大能帶隙(large band gap)之功率半導體(power semiconductor),如碳化矽及氮化鎵,其中需要高電壓及高電流,如電力裝置、載具、或機具。相較於常規之矽半導體,此功率半導體可於較高溫下操作,係因該半導體元件本身具耐高熱性。
為利用此類功率半導體之特性,需要具極佳導熱度之黏結材料,其可有效釋放半導體操作時產生之熱。如專利文獻1所述,近年來,一含奈米尺寸金屬細粒之漿糊經研究為具極佳導熱度之黏結材料。於使用此漿糊之黏結方法中,一金屬顆粒之燒結現象係用於黏結。
然而,於使用專利文獻1所述金屬顆粒燒結現象之黏結方法中,燒結反應導致之燒結收縮(sintering shrinkage)可產生收縮應力(shrinkage
stress),且仍留在黏結部。此外,當欲黏結構件之熱膨脹係數(thermal expansion coefficient)差異極大時,於操作半導體裝置時之冷卻-加熱循環期間,施加更高之熱應力至黏結部,此造成問題如半導體元件或黏結部產生裂縫,或黏結部剝離。
作為減少此一熱應力施加至黏結部之方法,專利文獻2揭示一導電黏結材料,包含由一第一金屬製成之金屬細粒,及具直徑大於該金屬細粒之金屬塗佈樹脂顆粒,且以一第二金屬塗佈。專利文獻2敘明,藉此黏結材料,可減少施加至半導體元件與電路圖案間之黏結部之應力。
專利文獻3揭示一半導體裝置,包括一金屬引線框架(metal lead frame)及一半導體晶片,且金屬引線框架係藉一多孔接合層(porous joint layer)黏結,其中含銀之導電顆粒係作為彼此相黏結之黏結材料,且導電顆粒中之至少一部分氣隙係填充熱固性樹脂(thermosetting resin)。
另一方面,專利文獻4係揭示一包含半導體晶片及絕緣基板(insulating substrate)之半導體裝置,其中該絕緣基板包含該半導體晶片安裝其上及一電極板設置於其表面上。專利文獻4敘明,於一黏結半導體晶片及電極板之燒結金屬層,該層端部之孔隙率(porosity)係設定為高於該層中央部之孔隙率,從而可鬆弛施加至該黏結層端部之應力。
專利文獻1:日本專利公開號2006-352080
專利文獻2:日本專利公開號2011-198674
專利文獻3:日本專利公開號2010-171271
專利文獻4:日本專利公開號2014-29897
於專利文獻2所述之導電黏結材料,二乙烯基苯交聯聚合物係作為金屬塗佈樹脂顆粒之樹脂。因此,當以該黏結材料用於高溫操作之半導體裝置如功率半導體時,該樹脂之耐熱性不足,且樹脂於燒結過程或高溫操作期間可能發生機械特性劣化,其可能不利地影響半導體裝置之長期可靠度。
專利文獻3所述之半導體裝置製造方法於形成黏結層後之階段需以液體固化樹脂填充黏結層之步驟,並固化液體固化樹脂,其使得製造過程麻煩。此外,黏結層自其外部以樹脂填充,其不利地導致樹脂填充不均勻,使得應力鬆弛能力不足。
如專利文獻4所述,當增加孔隙率而鬆弛施加至半導體裝置黏結部之應力時,黏結層之氣隙狀態於操作期間改變,具體而言於高溫如200℃或以上之長期操作期間,其減少黏結強度或導致黏結部或其類似物剝離,使得不利地損害半導體裝置之長期可靠度。
本發明鑑於上述問題而實施,且本發明之目的係提供黏結材料,其能提供具極佳黏結強度及熱釋放特性之黏結物件、能減少施加至黏結部之應力、及具極佳之長期可靠度。
本發明之一態樣係有關一種可燒結黏結材料,其包含銀填
料及樹脂顆粒,其中該銀填料包含片形填料,其算術平均粗糙度(Ra)係10nm或以下;以及該樹脂顆粒之彈性模數(E)係10Gpa或以下,且熱分解溫度係200℃或以上。
本發明可提供一黏結材料,其能提供一具極佳長期可靠度之黏結物件。
1‧‧‧半導體晶片
2,2’‧‧‧黏結層
3‧‧‧基板金屬表面
4‧‧‧基板
5‧‧‧冷卻板
圖1係本發明之一具體實施例之半導體裝置局部橫截面。
圖2係實施例中冷卻-加熱循環前後黏結層橫截面之SEM影像。
圖3係實施例中黏結層橫截面之SEM影像。
圖4係實施例中冷卻-加熱循環前後黏結部之SAT影像。
發明人得知,藉添加具特定彈性範圍之樹脂顆粒至主要由銀填料組成之黏結材料,可有效減少施加至黏結部之應力,同時維持極佳之黏結強度及導熱度,其結果為,取得具極佳之長期可靠度之黏結物件。此一黏結材料係具體適用於可高溫下操作之半導體裝置,如功率半導體。
本發明之黏結材料包含銀填料及具特定彈性模數之耐熱樹脂顆粒。下文中,將詳盡說明本發明黏結材料之組分。
銀填料
銀填料係本發明黏結材料之主要組分。黏結材料之銀填料係藉加熱彼此熔融(燒結)以形成銀燒結產物,從而形成具極佳導熱度及黏結
強度之黏結層。
本發明黏結材料之銀填料含量較佳地係黏結材料之固體組分總質量之90質量%或以上,更佳地係91質量%或以上,及又更佳地係93質量%或以上,且於一具體實施例,94質量%或以上可具體較佳。當銀填料含量增加時,取得具優異之黏結強度及導熱度之黏結材料。銀填料含量係黏結材料固體含量之99.9質量%或以下,且較佳地係99.0質量%或以下。本文之「固體組分」意指黏結材料之所有組分,不包括因加熱而自黏結層消失之組分。
銀填料之中心粒徑較佳地係1nm至50μm。銀填料之中心粒徑更佳地係10nm至30μm,且又更佳地係100nm至20μm。當銀填料之粒徑介於上述範圍內時,可更改進填料之燒結性(sinterability)。此外,填料於黏結材料中良好地分散,其可改進黏結材料之保存安定性,且提供均勻之黏結強度。本文之銀填料「中心粒徑」代表體積基準粒度分佈曲線(volume-basis particle size distribution curve)之中值粒徑(50%粒徑:D50),其係藉雷射繞射粒度分析儀(laser diffraction particle size analyzer)之測量而得。
銀填料之形狀係未具體侷限,其實例包括球形、約略球形、橢圓球形、紡錘形、立方體形、約略立方體形、片形(flake-shaped)、及不定形。其中,就保存安定性觀點而言,較佳係使用球形、約略球形、及片形填料。
於一具體實施例,片形填料係又更較佳。片形填料之實例可包括板形、薄片形、及鱗屑形(scale-shaped)填料。片形填料之較佳實例包
括一側方向具薄板形且前面方向具圓形、橢圓形、多邊形、或不定形之顆粒。具此形狀之填料具極佳之加熱燒結性,係因填料間之高接觸面積,可減少燒結產物之孔隙率。
片形填料之含量較佳地係銀填料之30質量%或以上,更佳地係銀填料之50質量%或以上,且又更佳地係60質量%或以上,且進一步更佳地係70質量%或以上。於一具體實施例,片形填料之含量較佳地係80質量%或以上,更佳地係90質量%或以上,且可為100質量%。當片形填料含於上述範圍時,可形成具低孔隙率及極佳導熱度之燒結產物。
片形填料之較佳實例將說明如下。
於本發明中,具平滑表面之片形填料係具體較佳。由於此類填料具平坦表面,填料間之接觸面積更加增大,其達到極佳燒結性並從而提供具極佳導熱度之黏結層。此外,由於填料具平滑表面,填料具極佳分散性(dispersibility),從而可形成具均勻黏結強度及應力鬆弛能力之黏結層。
於此,當填料具平滑表面時,表面之算術平均粗糙度(Ra)較佳地係20nm或以下,且更佳地係10nm或以下。由填料分散性及從中取得之黏結層熱導電度之觀點,算術平均粗糙度(Ra)較佳地係8.5nm或以下,更佳地係5nm或以下,且又更佳地係3.5nm或以下。考量到製造便利性,算術平均粗糙度(Ra)較佳地係1nm或以上。
於此,可以原子力顯微鏡(AFM)測定算術平均粗糙度(Ra)。AFM以連接懸臂尖端之探針追蹤樣本表面或掃描樣本表面,其係於探針與
樣本表面間維持恆定距離。藉測定懸臂垂直位移評估樣本表面之凹凸形狀。測定條件如下:
模式:接觸模式
懸臂:OMCL-TR800PSA-1,製自Olympus Corporation
高度定向解析度:0.01nm
橫向定向解析度:0.2nm
此外,具平滑表面之片形填料較佳地係晶質填料。晶質片形填料具極佳之燒結性,其可提供極佳之黏結強度。晶體可為單晶體或多晶體。就表面平滑度之觀點,晶體更佳地係單晶體。晶質銀填料可以X光繞射分析或其類似方式確認。
本發明具體實施例之片形填料之中心粒徑(D50)較佳地係0.05μm或以上及20μm或以下。中心粒徑0.05μm或以上之顆粒係易於製造,且中心粒徑20μm或以下之顆粒具極佳之燒結性。中心粒徑更佳地係15μm或以下,且又更佳地係8μm或以下,且於一具體實施例,5μm或以下係具體較佳。中心粒徑更佳地係0.1μm或以上,且又更佳地係0.3μm或以上。
粒徑之標準差(δD)較佳地係10μm或以下,更佳地係8μm或以下,且又更佳地係4μm或以下。於此,粒徑之標準差(δD)係基於隨機選取之100個顆粒之粒徑計算值。
顆粒之平均厚度(T)較佳地係1nm或以上且100nm或以下。平均厚度1nm或以上之顆粒可更易於製造,且平均厚度100nm或以下之顆粒可提供具極佳導熱度之燒結產物。平均厚度更佳地係80nm或以下,且又
更佳地係50nm或以下。平均厚度更佳地係10nm或以上,且又更佳地係20nm或以上。於此,顆粒之平均厚度(T)係隨機選取之100個顆粒之厚度平均值。顆粒厚度可根據掃描式電子顯微鏡(SEM)圖片測定,其係利用影像分析軟體或目視觀察。
片形填料之縱橫比(顆粒之中心粒徑(D50)/平均厚度(T))較佳地係20或以上及1000或以下。縱橫比更佳地係30或以上,且又更佳地係35或以上。縱橫比更佳地係500或以下,又更佳地係200或以下,且具體而言較佳地係100或以下。
本發明使用之銀填料可藉習知之方法製造,如還原法、研磨法、電解法、霧化法、或熱處理法。片形填料製造法之實例如前述之彼等,包括日本專利公開號2014-196527所述之方法。其完整揭示在此併入本案以作為參考資料。
於一具體實施例,銀填料之表面可以有機物質塗佈。
有機物質之量較佳地係銀填料之0.01至10重量%,且更佳地係0.1至2重量%。亦較佳的是,根據銀填料或其類似物之形狀調整有機物質之量。舉例而言,可藉揮發或加熱後熱分解有機物質,及測定重量損失,以測定有機物質之量。
於此,銀填料「以有機物質塗佈」之狀態包括將銀填料分散於有機溶劑後,有機溶劑附著至銀填料表面之狀態。
塗佈銀填料之有機物質之實例可包括親水性有機化合物,如具1至5個碳原子之烷基醇、具1至5個碳原子之烷烴硫醇、及具1至5個碳
原子之烷烴多元醇、或具1至5個碳原子之低級脂肪酸;以及疏水性有機化合物,如具15個或以上碳原子之高級脂肪酸及其衍生物、具6至14個或以上碳原子之中級脂肪酸及其衍生物、具6個或以上碳原子之烷基醇、具16個或以上碳原子之烷基胺、或具6個或以上碳原子之烷烴硫醇。
其中,較佳地係高級脂肪酸、中級脂肪酸、及其金屬鹽類、醯胺、胺、或酯類化合物。防水(疏水性)有機化合物更佳地係高級或中級脂肪酸,或其防水衍生物。鑑於其塗佈效果,高級或中級脂肪酸係具體而言較佳。
高級脂肪酸之實例包括直鏈飽和脂肪酸,如十五烷酸、十六烷酸、十七烷酸、十八烷酸、12-羥基十八烷酸、二十烷酸、二十二烷酸、二十四烷酸、二十六烷酸(蠟酸)、或二十八烷酸;一支鏈飽和脂肪酸,如2-戊基壬酸、2-己基癸酸、2-庚基十二烷酸、或異硬脂酸;以及不飽和脂肪酸,如棕櫚油酸、油酸、異油酸、反油酸(elaidic acid)、亞油酸、亞麻酸、蓖麻油酸(recinoleic acid)、鱈油酸(gadoleic acid)、芥酸(erucic acid)、及鯊油酸(selacholeic acid)。
中級脂肪酸之實例包括直鏈飽和脂肪酸,如己酸、庚酸、辛酸、壬酸、癸酸、十一烷酸、十二烷酸、十三烷酸、或十四烷酸;支鏈飽和脂肪酸,如異己酸、異庚酸、2-乙基己酸、異辛烷酸、異壬酸、2-丙基庚酸、異癸酸、異十一烷酸、2-丁基辛酸、異十二烷酸、及異十三烷酸;以及不飽和脂肪酸,如10-十一烯酸。
銀填料表面以有機物質塗佈之製造方法之實例包括但不侷
限於,於有機溶劑存在下藉還原法之銀填料製造方法。特別地,舉例而言,可藉混合羧酸銀鹽與一級胺以取得銀填料,並於有機溶劑存在下以還原劑沈澱銀填料,係如日本專利公開號2006-183072及2011-153362或其類似物之說明。此外,可藉日本專利公開號2014-196527所述之方法取得銀填料,包含藉使用載體介質如水或酒精分散草酸銀之步驟,且分散介質如乙二醇類,接著施加熱及/或壓力。上述申請案之完整揭露係在此併入本案以作為參考資料。
亦較佳的是,將所得銀填料分散於用於製造填料之溶劑,並將分散物直接加至本發明之黏結材料。
此外,銀填料表面可以二或多個有機物質層塗佈。此填料可藉,舉例而言,將上述製造之具有機物質塗層之銀填料分散於其他有機溶劑而取得。欲加至本發明黏結材料之溶劑較佳地可稱作「其他溶劑」。
當以有機物質塗佈銀填料表面時,可更防止或減少黏結材料之銀填料聚集。此外,當加熱而露出銀表面時,填料表面之有機物質可能溶析、揮發、或熱分解,其結果為,可更增加填料燒結性。
於一具體實施例,銀填料可為氧化銀顆粒或至少於表面上具氧化銀層之顆粒。當使用此銀填料時,於燒結時銀表面藉氧化銀還原而曝露,從而可更增加燒結性。
銀填料可單獨或結合二或多個使用。結合不同形狀或不同尺寸之填料可減少燒結產物孔隙率。結合之實例包括但不侷限於,片形填料與中心粒徑小於片形填料之約略球形填料之混合物。約略球形填料之含
量範圍可為銀填料之1至50質量%,且更佳地係5至30質量%。
於一具體實施例,本發明之黏結材料亦可包含其他金屬之填料,以替代一部分銀填料。非銀金屬之實例包括銅、金、錫、鋅、鈦、及該些金屬之合金與氧化物,且其中較佳地係銅及含銅合金。
此類金屬填料之粒徑、形狀、及表面塗層之較佳實例包括與前面銀填料示例之彼等相同者。銀填料以外之金屬填料含量,較佳地係銀填料之0至30質量%,更加地係1至20質量%。
樹脂顆粒
樹脂顆粒形成低模數部分,亦即該部分比黏結層之銀組分基質更具撓性(flexible),從而增加黏結層應力鬆弛能力。
因此,樹脂顆粒之彈性模數(E)比銀基質的低,且較佳地係10GPa或以下。樹脂顆粒之彈性模數(E)更佳地係0.01MPa或以上及1GPa或以下,又更佳地係0.1MPa或以上及500MPa或以下,且具體而言較佳地係0.5MPa或以上及100MPa或以下,且於一具體實施例,1MPa或以上及50MPa或以下可具體較佳。當樹脂之彈性模數(E)降低時,可更增加製造過程或操作半導體時之冷卻-加熱循環產生之應力之吸收效果。另一方面,當彈性模數(E)過低時,黏結強度及加工性(workability)可能降低。
於此,彈性模數(E)意指於25℃下之楊氏模數(Young's modulus)(壓縮彈性模數),其可參考JIS K 6254(或ISO7742:2008)測定,條件如下:
測試件:直徑25mm,厚度12.5mm
壓縮速度:10±1mm/min
測定溫度:25℃
測試件係於壓縮應變(compression strain)25%下壓縮四次,並記錄壓縮力與變形間之關係。由第四次壓縮取得壓縮/應變曲線,並以下式計算彈性模數(E):
彈性模數(E)(MPa)=F/A.ε
其中「F」代表壓縮力(N),「A」代表測試件之原始截面積(mm2),且「ε」代表測試件之變形量(deformation amount)。
於此,類橡膠(彈性)樹脂及類塑料樹脂兩者可作為樹脂顆粒。
於一具體實施例,就應力鬆弛之觀點而言,類橡膠顆粒係更佳。類橡膠顆粒之橡膠硬度(硬度計A型硬度)較佳地係10度或以上及100度或以下,且更佳地係20度或以上及90度或以下。「硬度計A型硬度」可參考JIS K 6253測定。
本發明之樹脂顆粒較佳地具高耐熱性。特別地,樹脂之熱分解溫度較佳地係200℃或以上,更佳地係250℃或以上,且又更佳地係300℃或以上,且於一具體實施例,350℃或以上可具體較佳。
當樹脂之熱分解溫度介於上述範圍內時,可更減少高溫操作時之黏結層機械特性劣化。
於此,「熱分解溫度」意指於熱重量分析儀測定裝置(thermogravimetric measuring apparatus)之空氣流中,自25℃以10℃/分鐘之
速率上升溫度下,樹脂重量減少1%之溫度(1%重量減少之溫度)。
樹脂顆粒形狀未具體侷限,其實例包括球形、約略球形、紡錘形、及不定形。就分散性之觀點而言,球形、約略球形、或紡錘形係較佳。
樹脂顆粒之中心粒徑較佳地係0.05μm或以上及30μm或以下。於一具體實施例,中心粒徑較佳地係0.1μm或以上及20μm或以下,且更佳地係0.5μm或以上及10μm或以下,且具體而言較佳地可為5μm或以下。於一具體實施例,樹脂顆粒之中心粒徑較佳地係黏結層厚度之1/3或以下。
於此,樹脂顆粒之「中心粒徑」代表藉雷射繞射粒度分析儀(laser diffraction particle size analyzer)測定取得之基於體積之粒度分佈曲線(volume-basis particle size distribution curve)之50%粒徑(D50)。
樹脂顆粒之含量較佳地係0.1質量份(part by mass)或以上,更佳地係0.5質量份或以上,又更佳地係1質量份或以上,且具體而言較佳地係2質量份或以上,其係基於前述銀填料之100質量份。樹脂顆粒之含量較佳地係9質量份或以下,更佳地係8質量份或以下,且又更佳地係7質量份或以下,其係以銀填料為100質量份。於一具體實施例,樹脂顆粒之含量又更佳地可為6質量份或以下。當樹脂顆粒之含量係0.1質量份或以上時,取得極佳之應力鬆弛能力。當樹脂顆粒之含量係9質量份或以下時,黏結層之銀組分比例增加,其可改進導熱度。
於一具體實施例,當含有過量液態熱固性樹脂組分以替代
或加入樹脂顆粒時,可減少導熱度。於此具體實施例,較佳為,黏結材料實質上不含液態熱固性樹脂組分。特別地,當含有液態熱固性樹脂組分時,其含量較佳地係3質量份或以下,更佳地係2質量份或以下,且又更佳地係1質量份或以下,其係以銀填料為100質量份。
本發明使用之樹脂顆粒樹脂組分未具體侷限,只要樹脂組分具前述之彈性模數(E)及耐熱性,且可使用習知之樹脂。其實例可包括聚矽氧系樹脂、氟系樹脂、碸系樹脂、酚系樹脂、環氧系樹脂、丙烯酸系樹脂、醯亞胺系樹脂、醯胺醯亞胺系樹脂、苯醚樹脂(phenylene oxide resin)、馬來醯亞胺系樹脂、及氰酸酯系樹脂。
下文中,將描述用於樹脂顆粒之樹脂組分之實例,但本發明之樹脂顆粒未侷限於此。
聚矽氧系樹脂之實例包括同元聚合物或共聚物,包含以一矽氧烷鍵作為主骨架,其係以下式表示:-(-Si(R1)2-O-)n- (1)。
於式(1)中,R1 s之每一者皆獨立地為烷基、芳基、烯基、芳烷基、鹵烷基、環烷基、或選自於由有機基團組成之單價基團,其中前述基團之至少一氫原子係由環氧基、胺基、巰基、或(甲基)丙烯醯氧基取代。R1之碳原子數較佳地係1至20個,更佳地係1至10個。R1所代表之鹵烷基之鹵素實例包括氯、氟、硼、及碘。於此,n未具體侷限,但較佳地係1,000至100,000,且更佳地係2,000至50,000,且又更佳地係5,000至10,000。聚合物結構可為直鏈或支鏈。
於一具體實施例,式(1)之R1較佳地係選自於烷基、芳基、烯基、芳烷基、氟烷基之至少一者,且更佳地係包含選自於烷基(如甲基及乙基)及芳基(如苯基)之至少一者。
於一具體實施例,80莫耳%或以上之R1更佳地係甲基。
本發明之聚矽氧系樹脂顆粒係固化產物,其係以前述之同元聚合物或共聚物作為基本組分而形成。就應力鬆弛之觀點而言,固化產物較佳地係類橡膠固化產物。聚矽氧橡膠之較佳實例可包括二甲基聚矽氧橡膠、氟聚矽氧橡膠、甲基苯基聚矽氧橡膠、及甲基乙烯基聚矽氧橡膠。
氟系樹脂之實例包括同元聚合物或共聚物,如四氟乙烯、四氟乙烯/丙烯、四氟乙烯/烷氧乙烯、四氟乙烯/氟乙烯基醚、四氟乙烯/丙烯/二氟亞乙烯、乙烯/六氟丙烯/四氟乙烯、二氟亞乙烯、乙烯/六氟丙烯、乙烯/六氟丙烯/二氟亞乙烯、及氟磷腈。亦較佳地,前述聚合物總單元之90莫耳%或以上係全氟取代。
其中,就耐熱性之觀點而言,四氟乙烯同元聚合物(PTFE)或含四氟乙烯單元(-CF2-CF2-)之共聚物係較佳。四氟乙烯同元聚合物,及總單元之80莫耳%或以上,較佳地90莫耳%或以上為四氟乙烯單元之共聚物係更佳。
本發明之氟系樹脂顆粒係固化產物,其係以前述之同元聚合物或共聚物作為基本組分而形成。就應力鬆弛之觀點而言,固化產物較佳地係類橡膠固化產物。
氟系橡膠(氟橡膠)之較佳實例包括四氟乙烯(PTFE)、四氟乙
烯/全氟烷氧乙烯(PFA)、四氟乙烯/六氟丙烯(FEP)、及乙烯/四氟乙烯(ETFE)。
環氧系樹脂之實例包括脂族環氧樹脂、脂環族環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、環氧酚醛清漆型樹脂、聯苯基型環氧樹脂、萘型環氧樹脂、及其混合物。本發明之環氧系樹脂顆粒較佳地係由前述之樹脂組分形成之交聯固化產物。
習知之固化劑及硫化劑(vulcanizing agents)或其類似物可用於固化或硫化前述之樹脂組分。
就應力鬆弛之觀點而言,類橡膠顆粒較佳地由聚矽氧系樹脂、氟系樹脂、及環氧系樹脂組分形成。就耐熱性之觀點而言,聚矽氧橡膠及氟橡膠係更佳。
樹脂顆粒可為其中前述之樹脂組分由無機載體或其類似物支撐之形式。可含有無機填料、金屬填料、耐熱安定劑、及抗氧化劑或其類似物,其範圍落於不抑制本發明功效之內。
樹脂顆粒較佳地亦具一塗層於表面。
舉例而言,前面示例之樹脂組分可用於塗層。於一具體實施例,相較於樹脂顆粒內部,藉增加塗層樹脂組分之交聯密度,可改進耐熱性及形狀安定性。
就耐熱性之觀點而言,塗層較佳地係聚矽氧系樹脂。較佳之實例包括聚有機矽倍半氧烷(polyorgano silsesquioxane)固化產物,其具交聯結構,代表式如下:
(R1)SiO3/2
其中R1之定義如式(1),且50莫耳%或以上之R1更佳地係甲基。
當樹脂顆粒具塗層時,塗層之塗佈百分比較佳地係1%或以上及100%或以下,較佳地係5%或以上,且較佳地係10%或以上,其係以樹脂顆粒之表面積為基準。塗佈比(coating ratio)之質量百分比較佳地係0.5質量%或以上及500質量%或以下,且更佳地係1質量%或以上及100質量%或以下,其係以樹脂顆粒為基準。
樹脂顆粒可單獨或結合二或多個使用。
商業上購得之產品亦可用於本發明之樹脂顆粒,其實例包括矽氧系樹脂顆粒,如KMP-600、KMP-601、KMP-602、KMP-605、及X-52-7030,製自Shin-Etsu Chemical Co.,Ltd。
添加劑
本發明之黏結材料可進一步包含添加劑。添加劑之實例可包括燒結促進劑,於加熱期間能促進銀填料燒結。燒結促進劑未具體侷限,且可考量結合之銀填料或其類似物而適當選取。
燒結促進劑之實例包括能促進塗佈銀填料表面之有機物質溶析及/或熱分解之組分。
此一組分之實例包括有機鹼化合物及可作為氧化劑之化合物。
有機鹼化合物較佳地係含氮鹼性化合物。含氮鹼性化合物之實例包括非環胺化合物、含氮雜環化合物、膦氮烯(phosphazene)化合物、及其類似物,且含氮雜環化合物係較佳。
非環胺化合物之實例包括烷基胺、胺基醇、及亞烷基二胺。非環胺化合物較佳地具1至15個碳原子,更佳地係具1至10個碳原子。
烷基胺包括單、二、或三烷基胺,且較佳地係三烷基胺。三烷基胺之實例包括三甲基胺、三乙基胺、二異丙基乙基胺、三丁基胺、及其類似物。胺基醇之實例包括單、二、或三醇胺,如單乙醇胺、二乙醇胺、三乙醇胺、2-胺基-2-甲基1-丙醇、二異丙醇胺、及三異丙醇胺。亞烷基二胺之實例包括乙烯二胺、己二胺、及其類似物。
含氮雜環化合物之實例包括非芳環胺化合物、含氮芳雜環化合物、含氮多環雜環化合物、及其類似物。
非芳環胺化合物之實例包括環二級胺化合物,如乙烯亞胺(或氮口元(aziridine))、吡咯啶、哌啶、及口末啉(morpholine);以及環三級胺化合物如1,4-二氮雜雙環[2.2.2]辛烷(DABCO)、N-甲基吡咯啶、及N-甲基口末啉(N-methyl morpholine)。
含氮芳雜環化合物之實例包括吡啶系化合物,如吡啶、甲吡啶(picoline)、2,6-二甲吡啶(2,6-lutidine)、可立定(colidine)、及二甲基胺基吡啶(DMAP);咪唑系化合物;三唑系化合物,如1,2,3-三唑、1,2,4-三唑、及苯并三唑;雙吡啶化合物,如2,2’-雙吡啶及4,4’-雙吡啶;嘧啶鹼基;嘌呤鹼基;以及三口井(triazine)系化合物。含氮芳雜環化合物較佳地具五元環或六元環,其係作為含氮部分。其中,咪唑系化合物係較佳。
咪唑系化合物之實例可包括但不侷限於,咪唑及苯并咪唑。咪唑系化合物可具至少一取代基,其實例包括具1至4個碳原子之烷
基、羥基、胺基、苯基、及其類似物。取代基較佳地係甲基或乙基,且更佳地係甲基。
含氮多環雜環化合物之實例可包括1,8-二氮雜雙環[5.4.0]-7-十一烯(DBU)、1,5-二氮雜雙環[4.3.0]-5-壬烯(DBN)、7-甲基-1,5,7-三氮雜雙環[4.4.0]癸-5-烯(MTBD)、1,5,7-三氮雜雙環[4.4.0]癸-5-烯(TBD)、及其類似物。
膦氮烯化合物之實例包括但不侷限於,膦氮烯鹼基如BEMP(2-三級丁基亞胺基-2-二乙基胺基-1,3-二甲基過氫-1,3,2-二氮雜磷化氫)、tBu-P1(三級丁基亞胺基參(二甲基胺基)磷烷)、tBu-P1-t(三級丁基亞胺基三(吡咯啶)磷烷)、Et-P2(1-乙基-2,2,4,4,4-五(二甲基胺基)-2λ5,4λ5-鏈二(膦氮烯))、tBu-P4(1-三級丁基-4,4,4-參(二甲基胺基)-2,2-雙[參(二甲基胺基)亞磷烷基胺基]-2λ5,4λ5-鏈二(膦氮烯))、及其類似物。
於一具體實施例,含氮雜環化合物較佳地係具二或多個氮原子於一分子之化合物,其實例可包括具脒(amidine)部分及/或胍(guanidine)部分之化合物。於此,脒部分係二氮原子鍵接至一碳原子之結構,其中分別係一單鍵及一雙鍵。胍部分係三氮原子鍵接至一碳原子之結構,其中分別係二單鍵及一雙鍵。此一化合物之實例包括咪唑系化合物、DBU、DBN、MTBD、TBD、及其類似物。
本發明有機鹼化合物之共軛酸之pKa較佳地係7.0或以上,且更佳地係8.0或以上。於一具體實施例,具較高鹼度(basicity)之化合物係較佳,且其共軛酸之pKa較佳地係9.0或以上,更佳地係10.0或以上,且又更佳
地係11.0或以上。於此,共軛酸之pKa係於25℃之DMSO中測定之值。
較佳地,有機鹼化合物係無,或幾乎不存在於燒結產物。據此態樣,有機鹼化合物之沸點較佳地係未過高於本發明黏結材料之燒結溫度,更佳地係低於燒結溫度,且又更佳地係低於燒結溫度100℃以上。
於一具體實施例,鑑於其對銀填料燒結之功效,咪唑系化合物、DBU、及DBN係較佳。
有機鹼化合物可單獨或結合二或多個使用。
氧化劑之實例可包括有機過氧化物、無機過氧化物、及無機酸、及其類似物。
有機過氧化物係具過氧化物陰離子O2 2-或過氧化物基團-O-O-之化合物,且至少一有機基團直接鍵接其上。其實例包括二異丁醯基過氧化物、異丙苯過氧新癸酸酯(cumol peroxyneodecanoate)、1,1,3,3-四甲基丁基過氧新癸酸酯、二正丙基過氧二碳酸酯、三級戊基過氧新癸酸酯、二(2-乙基己基)過氧二碳酸酯、三級丁基過氧新癸酸酯、二正丁基過氧二碳酸酯、1,1,3,3-四甲基丁基過氧特戊酸酯、三級丁基過氧新庚酸酯、三級戊基過氧特戊酸酯、三級丁基過氧特戊酸酯、二(3,5,5-三甲基己醯基)過氧化物、三級丁基過氧-2-乙基己酸酯、三級丁基過氧異丁酸酯、1,1-二(三級丁基過氧)-3,3,5-三甲基環己烷、1,1-二(三級丁基過氧)環己烷、三級丁基過氧-3,5,5-三甲基己酸酯、2,2-二(三級丁基過氧)丁烷、三級丁基過氧異丙基碳酸酯、三級丁基過氧乙酸酯、2,5-二甲基-2,5-二(2-乙基己醯基過氧)己烷、1,1,3,3-四甲基丁基過氧-2-乙基己酸酯、三級戊基過氧-2-乙基己酸酯、三級丁基過氧二乙基乙酸
酯、三級戊基過氧-2-乙基己基碳酸酯、三級丁基過氧-2-乙基己基碳酸酯、三級丁基過氧苯甲酸酯、二三級戊基過氧化物(di-tert-amyl peroxide)、2,5-二甲基-2,5-二(三級丁基過氧)己烷、三級丁基草久基過氧化物、2,5-二甲基-2,5-二(三級丁基過氧)己炔-3、二三級丁基過氧化物(di-tert-butyl peroxide)、3,6,9-三乙基-3,6,9-三甲基-1,4,7-三過臭氧烷、二異丙基苯單過氧化氫、對薄荷烷過氧化氫、草久基過氧化氫、二草久基過氧化物、及1,1,3,3-四甲基丁基過氧化氫。
無機過氧化物係具一過氧化物陰離子O2 2-或過氧化物基團-O-O-之化合物,且無機基團直接鍵接其上。其實例包括過氧化氫、過氧化物銨、單甲基過氧化銨、二甲基過氧化銨、三甲基過氧化銨、單乙基過氧化銨、二乙基過氧化銨、三乙基過氧化銨、單丙基過氧化銨、二丙基過氧化銨、三丙基過氧化銨、單異丙基過氧化銨、二異丙基過氧化銨、三異丙基過氧化銨、單丁基過氧化銨、二丁基過氧化銨、三丁基過氧化銨、過氧化鋰、過氧化鈉、過氧化鉀、過氧化鎂、過氧化鈣、過氧化鋇、過硼酸銨、過硼酸鋰、過硼酸鉀、或過硼酸鈉。
於本發明中,有機過氧化物及無機過氧化物之分解溫度(1小時之溫度半衰期)較佳地係200℃或以下。
無機酸之實例包括磷酸化合物,如正磷酸、自燃酸(pyrophoric acid)、偏磷酸、及多磷酸。
促進氧化銀還原之組分,其可存在於銀填料表面,亦可較佳地作為燒結促進劑。
促進氧化銀還原之組分之實例包括醇化合物及羧酸化合物。醇化合物之實例可包括多元醇,如檸檬酸、抗壞血酸、及葡萄糖。羧酸化合物之實例可包括一級羧酸如烷基羧酸、二級羧酸、及三級羧酸;二羧酸;以及具環結構之羧基化合物。有機酸鹽、有機酸酯、及羰基錯合物或其類似物,其於燒結期間發出或產生一氧化碳,亦可作為促進氧化銀還原之組分。
添加劑可單獨或結合二或多個使用。
當使用添加劑時,添加劑之含量較佳地係0.01至3質量份,更佳地係0.05至1.5質量份,且又更佳地係0.1至1.0質量份,其係基於銀填料之100質量份。
溶劑
本發明之黏結材料可進一步包含溶劑,其係於黏結材料之燒結溫度或以下蒸發或消失。
溶劑可調節黏結材料流動性,以改進加工性。溶劑亦可具改進銀填料燒結性之功效,係藉燒結期間揮發及/或移除塗佈銀填料之有機層。具促進氧化銀層還原功效之化合物亦較佳地作為溶劑。
本發明使用之溶劑沸點較佳地係60℃或以上及300℃或以下。當沸點位於上述範圍時,可抑制製造過程期間之溶劑揮發或於燒結後留下溶劑。
溶劑之實例包括醇類,如脂族醇、脂環族醇、芳族醇、及多元醇;乙二醇醚;乙二醇酯;乙二醇醚酯;脂族及/或芳香烴;酯類;醚類;
醯胺;以及環酮。溶劑之特定實例包括但不具體侷限於,甲基卡必醇(methyl carbitol)、乙基卡必醇、丙基卡必醇、丁基卡必醇(BC)、丙二醇單甲醚(DPGME)、三甘醇二甲醚、甲基賽璐蘇(methyl cellosolve)、乙基賽璐蘇、或丁基賽璐蘇、乙基卡必醇乙酸酯、丁基卡必醇乙酸酯(BCA)、甲基賽璐蘇乙酸酯或乙基賽璐蘇乙酸酯、乙二醇、二丙二醇(DPG)、聚乙二醇、環辛酮、環庚酮、環己酮、芐基醇、甘油、丁基乙氧乙基乙酸酯、丙烯碳酸酯、四氫呋喃、二乙醚、二乙酯、γ-丁內酯、異佛酮(isophorone)、縮水甘油基苯基醚、萜品醇(terpineol)、二甲基甲醯胺、二甲基乙醯胺、N-甲基吡咯酮、或其類似物。
溶劑可單獨或結合二或多個使用。
溶劑之添加量未具體侷限,且較佳地範圍係0.5質量份或以上及20質量份或以下,且更佳地係1質量份或以上及10質量份,其係基於銀填料之100質量份。於一具體實施例,其量較佳地係8質量份或以下。當溶劑量位於上述範圍時,可更減少施加後之乾燥或燒結步驟之收縮率(shrinkage ratio),而於製造期間維持改進之加工性。
本發明黏結材料之黏度,較佳地範圍係5000至150,000mPa.s,且更佳地範圍係8,000至100,000mPa.s。黏結材料較佳地具搖變度(thixotropic index)範圍1.0至5.0。當黏度及搖變度位於上述範圍內時,可更改進黏結材料加工性。於此,黏度代表以布氏黏度計(RV DV-II)於7號心軸/10rpm/25℃條件下之測定值。搖變度係一計算值,係0.5rpm下所測黏度與5rpm下所測黏度之比值。
此外,視需求可將無機細粒、抗氧化劑、安定劑、分散劑、及搖變性賦予之材料或其類似物加入黏結材料,其範圍落於不損害本發明功效之內。
本發明黏結材料之製造係藉將銀填料與樹脂顆粒,及任選地添加劑、溶劑及其類似物導入混合機,如珠磨機、研磨機、球磨機、三輥磨機、旋轉式混合機、或雙螺桿混合機、及彼等之組合。
黏結層之形成係藉施加本發明黏結材料至所需之黏結構件部位,並將其加熱。黏結層具一結構,其中樹脂組分具極佳應力鬆弛能力並分散於經燒結之銀基質中。
含樹脂組分之低模數部分之比例較佳地係黏結層之1至50體積%,且更佳地係5至40體積%。
本發明黏結材料形成之黏結層較佳地具低孔隙率(於銀燒結產物形成一定比例之氣隙體積)。當孔隙率降低時,可減少黏結層應力鬆弛能力,而取得優異之黏結強度及導熱度。然而,於本發明銀燒結產物之結構中,樹脂組分之低模數部分係分散於低孔隙率之銀燒結基質中,從而可同時達到極佳之黏結強度及熱釋放特性,及改進之應力鬆弛能力。
因此,燒結後之黏結層孔隙率較佳地係0%或以上及12%或以下,更佳地係10%或以下,且又更佳地係8%或以下。
於此,孔隙率係整體黏結區域之平均值(欲黏結之二構件間之夾心區域),且可測定如下,並於實施例中詳盡說明。
1. 以拋光機(polisher)拋光黏結物件,露出黏結層橫截面。
2. 自黏結區域一端至另一端,拍攝多於十張表面SEM影像。
3. 將影像輸入顯微鏡、藉亮度擷取法(luminance extraction)擷取影像中之氣隙、及計算氣隙區域之比例。黏結區域孔隙率計算成所有取得影像之孔隙率平均值。
取得本發明之黏結層,其具高導熱度。黏結層(25℃)之導熱度較佳地係80W/mK或以上,且更佳地係160W/mK或以上。於一具體實施例,導熱度200W/mK或以上係又更較佳。於此,可藉一方法測定導熱度,其係使用雷射閃光熱量計(laser-flash calorimeter)並參考JIS R1611-2010,並於實施例中詳盡說明。
可適當設定黏結層厚度,以根據用途呈現所需之黏結強度,例如,厚度可設定為50至100μm。
本發明黏結材料適用於多個應用,且具體而言適用於黏結功率半導體元件及/或具不同熱膨脹係數(thermal expansion coefficients)之零件。
利用本發明黏結材料製造黏結物件之方法之步驟包括:提供二欲黏結構件;配置該二構件及黏結材料,以使二構件之欲黏結表面彼此面對,且本發明之黏結材料配置於兩者之間;以及將該二構件及該配置於兩者間之黏結材料加熱至預定溫度。
作為使用本發明黏結材料之黏結物件之一態樣,以下將說明半導體裝置及其製造方法。
圖1係本發明具體實施例之半導體裝置之部分橫截面圖。於一具體實施例,半導體裝置包括半導體晶片(1)及一基板(4),其中半導體晶片(1)及基板金屬表面(3)係藉本發明黏結材料燒結取得之黏結層(2)彼此黏結。於另一具體實施例,半導體裝置進一步包括冷卻板(5),其中半導體晶片(1)與基板金屬表面(3)及/或基板金屬表面(3)與冷卻板(5)係藉本發明黏結材料燒結取得之黏結層(2及/或2’)彼此黏結。
欲黏結之構件
半導體晶片未具體侷限。其實例可包括但不侷限於,Si晶片及SiC晶片。半導體晶片之背面(欲黏結面)較佳地係鍍金屬(metal-plated),如銀、銅、鎳、及金或其類似物。半導體晶片形狀之實例包括但不侷限於,正方形及矩形,其高度及寬度係約2mm至約15mm。
基板之實例包括但不侷限於,金屬基板、陶瓷基板、及具金屬層與陶瓷層夾心層疊結構之基板。基板表面(欲黏結面)較佳地係金屬。舉例而言,適用之鍍金屬基板如鍍銀基板、鍍金基板、鍍鎳基板、或鍍錫基板;且適用之金屬基板如銅基板或鋁基板。特定實例可包括但不侷限於,DBU基板、DBA基板、及AMB基板。
半導體裝置之製造方法
本發明具體實施例之半導體裝置製造方法之步驟包括:(1)施加本發明之黏結材料於基板;(2)放置半導體晶片於基板;以及(3)加熱該放置半導體晶片之基板。
於上述步驟(1),施加黏結材料於基板之方法未具體侷限,且可使用分配法(dispense method)及網板印刷法(screen printing method)或其類似方法。於上述步驟(2),可使用習知之方法作為放置(安裝)半導體晶片於基板上之方法。上述步驟(2)亦可包括定位半導體晶片之方法,及調整欲施加之黏結材料厚度之方法或其類似方法。於上述步驟(3),加熱方法可根據黏結材料或欲黏結之構件適當選取。
燒結概況之實例包括但不侷限於:
乾燥步驟:90℃或以上,15分鐘或以上
燒結溫度:250℃或以上,如300℃
壓力:10MPa或以上
時間:3分鐘至5分鐘
本發明具體實施例之製造方法所製造之半導體裝置具長期可靠度,係因其黏結層具極佳之黏結強度及熱釋放特性,及應力鬆弛能力。
本發明黏結材料可用於多個應用,如電子零件、電子裝置、電零件、及電裝置。舉例而言,黏結材料可適用於黏結晶片組件與例如電容器或電阻器之電路基板;半導體晶片與引線框架或例如二極體、記憶體、IC、或CPU之電路基板;以及高產熱CPU晶片及冷卻板。
實施例
下文中,本發明將以實施例闡述,目的在於更詳盡說明本發明。該些實施例係用於說明本發明,且不侷限本發明。
本發明實施例使用之材料如下。若無其他指明,以商業上購
得之高純度產品作為試劑。
銀填料
銀填料1:
片形填料(縱橫比=20~200,Ra10nm)與球形填料之混合物,D50=0.45μm
銀填料2:
球形填料,D50=2.1μm,比表面積(specific surface area)=0.9mm2,TAP密度=5.1g/cm3
樹脂顆粒
樹脂1:球形聚矽氧粉末(X-52-7030,製自Shin-Etsu Silicones),D50=5μm
添加劑
Perbutyl D(二三級丁基過氧化物)
DBU(1,8-二氮雜雙環[5.4.0]十一-7-烯)
溶劑
BCA(丁基卡必醇乙酸酯)
BC(丁基卡必醇)
DPG(二丙二醇)
實施例1
黏結材料之製備
將表1所示比例之銀填料、樹脂顆粒、添加劑、及溶劑混合製成黏結材料。
翹曲(Warpage)之評估
取得之黏結材料係以厚度100μm印刷於基板(鍍銀之酮引線框架,25×25mm,厚度係0.3mm)。將半導體晶片(背面鍍銀之Si晶片(die),10×10mm)安裝於基板上。含晶片之基板係於90℃下乾燥30分鐘,並於300℃/5分鐘/10MPa之烘箱條件下加熱,取得測試件進行評估。燒結後之黏結層厚度約40至60μm。
以三維長度測定機(KS-1100,製自Keyence Corporation)測定燒結過程產生之翹曲。
導熱度之評估
所取得之黏結材料係以厚度100μm印刷於二基板間(厚度500μm(5mmΦ)之鍍銀銅基板)。含黏結材料之二基板係於90℃下乾燥30分鐘,並於300℃/5分鐘/10MPa之烘箱條件下加熱,取得測試件進行評估。燒結後之黏結層厚度約40至60μm,且取得之測試件厚度(亦即,二基板及黏結層之厚度)約1.0至1.1mm。
導熱度之測定
將取得之測試件放置於Kyoto Denshi Kogyo LFA-502,並測定厚度方向之導熱度,係藉室溫下(23±1℃)測定熱擴散率(α(m2/s))、比熱容量(c(J/gK))、及材料密度(ρ(kg/cm3)),並以關係式λ=αcρ計算導熱度(λ(W/mK))。
作為參考體,以上述相同方式測定厚度1mm之鍍銀銅板之導熱度,其係380W/mK。
冷卻-加熱循環測試
所取得之黏結材料係以厚度100μm印刷於基板(鍍銀之銅基板DBC,25×25mm,厚度係1mm)。將半導體晶片(背面鍍銀之Si晶片,5×5mm)安裝於基板上。含晶片之基板係於90℃下乾燥30分鐘,並於300℃/5分鐘/10MPa之烘箱條件下加熱,取得測試件進行評估。
以掃描式聲學顯微鏡(scanning acoustic microscope;SAT)評估黏結部之狀態。同時,黏結層孔隙率之測定如下。
孔隙率測定
1. 測試件拋光:
裝置:BUEHLER Beta GRINDER-POLISHER 60-1990
拋光紙:Struers SiC Paper #120、#220、#500、#800、#1200、#2000
拋光輪(Buff):Struers DP-Nap Size:200mm dia
鑽石噴霧(Diamond spray):Struers DP-Spray P 1μm,1/4μm
測試件係以拋光紙#120、#220、#500、#800、#1200、#2000、拋光輪、鑽石噴霧1μm、1/4μm交替拋光,以露出黏結層橫截面。
2. SEM造影:以掃描式電子顯微鏡拍攝黏結層橫截面之SEM影像(HITACHI S-3000,放大率=2000倍,1280×960dpi,由黏結區右緣至左緣共15個影像)。
3. 孔隙率計算:將取得之影像輸入顯微鏡(Keyence Digital Microscope
VHX-500)、以亮度擷取法擷取氣隙、及測定孔隙率,即影像氣隙區域之比例。將15個影像之孔隙率平均,以取得平均孔隙率。
以上述相同方法產生之測試件進行冷卻-加熱循環,其中測試件係冷卻至-55℃並保持30分鐘,加熱至+200℃並保持30分鐘,此視為1次循環。於250次循環、500次循環、及750次循環後,評估黏結部之狀態及黏結層之孔隙率,如上述。
評估結果列於表1及圖2至4。
比較例1
以表1所示之比例混合銀填料、樹脂顆粒、添加劑、及溶劑,以製備黏結材料。以如同實施例1之方式評估取得之黏結材料。結果列於表1及圖2與4。
比較例2
將表1所示比例之銀填料、樹脂顆粒、添加劑、及溶劑混合製成黏結材料。以如同實施例1之方式評估取得之黏結材料。結果列於表1及圖2與4。
參考例1
將表1所示比例之銀填料、樹脂顆粒、添加劑、及溶劑,以及黏結材料總質量之1.0質量%之液態環氧樹脂(含咪唑之雙酚A型環氧樹脂)混合製成黏結材料。以如同實施例1之方式評估取得之黏結材料。結果列於表1及
圖3。
如表1所示,發現相較於比較例1及2,實施例1之晶片及基板之翹曲大大地降低,且維持高導熱度。
如圖2所示,儘管比較例1達到低孔隙率,於黏結層形成之氣隙(air-space)於冷卻-加熱循環時傾向增大。於比較例2,孔隙率高,且於冷卻-加熱循環時氣隙傾向增大。另一方面,於實施例1,氣隙於黏結層中均
勻地分散,且即使於長期冷卻-加熱循環後,孔隙率維持在13.5%或以下。
如圖4所示,比較例2於冷卻-加熱循環時黏結部之剝離明顯增加。同時於比較例1,於冷卻-加熱循環時,黏結區域邊緣具體觀察到黏結部剝離。另一方面,於實施例1,即使於長期冷卻-加熱循環後,未觀察到黏結部剝離。
該些結果證實,使用本發明之黏結材料可提供黏結物件高導熱度及應力鬆弛能力,以及極佳之長期可靠度。
產業應用
本發明之黏結材料可應用於電子零件、電子裝置、電零件、及電裝置或其類似物。具體而言,黏結材料可適用於黏結晶片組件與電容器、電阻器、或其類似物之電路基板;半導體晶片與引線框架或二極體、記憶體、IC、CPU、或其類似物之電路基板;以及高產熱CPU元件及冷卻板。
1‧‧‧半導體晶片
2,2’‧‧‧黏結層
3‧‧‧基板金屬表面
4‧‧‧基板
5‧‧‧冷卻板
Claims (11)
- 一種可燒結黏結材料,其包含銀填料及樹脂顆粒,其中該銀填料包含片形填料,其算術平均粗糙度(Ra)係10nm或以下;以及該樹脂顆粒之彈性模數(E)係10Gpa或以下,且熱分解溫度係200℃或以上。
- 根據申請專利範圍第1項所述之可燒結黏結材料,其中該銀填料之含量係該黏結材料固體組分總質量之90質量%或以上及99.9質量%或以下。
- 根據申請專利範圍第1項或第2項所述之可燒結黏結材料,其中該樹脂顆粒之彈性模數(E)係100MPa或以下。
- 根據申請專利範圍第1項至第3項中任一項所述之可燒結黏結材料,其中該樹脂顆粒包含矽橡膠顆粒及/或氟橡膠顆粒。
- 根據申請專利範圍第1項至第4項中任一項所述之可燒結黏結材料,其中該銀填料包含晶質片形填料。
- 根據申請專利範圍第1項至第5項中任一項所述之可燒結黏結材料,其更進一步包含一添加劑。
- 根據申請專利範圍第1項至第6項中任一項所述之可燒結黏結材料,其更進一步包含一溶劑。
- 一種銀燒結產物,其包含樹脂顆粒分散其中,其中該樹脂顆粒之彈性模數(E)係10GPa或以下,且熱分解溫度係200℃或以上。
- 根據申請專利範圍第8項所述之銀燒結產物,其平均孔隙率係10%或以 下。
- 一種由根據申請專利範圍第8項或第9項中任一項所述之銀燒結產物黏結之黏結物件。
- 一種製造半導體裝置之方法,包括下列步驟:提供二欲黏結構件;配置該二構件及黏結材料,以使該二構件之欲黏結表面彼此面對且該黏結材料配置於兩者之間;以及將該二構件及該配置於兩者間之黏結材料加熱至預定溫度,其中該黏結材料係可燒結之黏結材料,其包含銀填料及樹脂顆粒,其中該銀填料包含片形填料,其算術平均粗糙度(Ra)係10nm或以下;以及該樹脂顆粒之彈性模數(E)係10Gpa或以下,且熱分解溫度係200℃或以上。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
WOPCT/JP2014/084765 | 2014-12-26 | ||
PCT/JP2014/084765 WO2016103528A1 (en) | 2014-12-26 | 2014-12-26 | Sinterable bonding material and semiconductor device using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201628103A true TW201628103A (zh) | 2016-08-01 |
TWI679709B TWI679709B (zh) | 2019-12-11 |
Family
ID=56149608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104141663A TWI679709B (zh) | 2014-12-26 | 2015-12-11 | 可燒結黏結材料及使用其之半導體裝置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US10446518B2 (zh) |
EP (1) | EP3238239A4 (zh) |
JP (1) | JP6571196B2 (zh) |
KR (1) | KR102226649B1 (zh) |
CN (1) | CN107735854B (zh) |
TW (1) | TWI679709B (zh) |
WO (1) | WO2016103528A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6729143B2 (ja) * | 2015-10-29 | 2020-07-22 | 三菱マテリアル株式会社 | 樹脂組成物、接合体及び半導体装置 |
JP6888401B2 (ja) * | 2017-04-28 | 2021-06-16 | 日亜化学工業株式会社 | 金属粉焼結ペースト及びその製造方法、ならびに導電性材料の製造方法 |
JP6890520B2 (ja) * | 2017-10-04 | 2021-06-18 | 三菱電機株式会社 | 電力用半導体装置 |
EP3855477A4 (en) * | 2018-10-26 | 2022-07-06 | Mitsui Chemicals, Inc. | METHOD FOR MAKING SUBSTRATE LAMINATE BODY AND LAMINATE BODY |
WO2020241739A1 (ja) * | 2019-05-29 | 2020-12-03 | 国立大学法人大阪大学 | 接合構造体の製造方法、及び接合構造体 |
KR20220115953A (ko) * | 2019-12-20 | 2022-08-19 | 헨켈 아게 운트 코. 카게아아 | 금속 결합을 위한 구리 합금을 함유하는 은 소결 조성물 |
JP7502598B2 (ja) | 2020-01-29 | 2024-06-19 | 日亜化学工業株式会社 | 半導体装置と半導体装置の製造方法 |
JP7205705B2 (ja) * | 2021-03-05 | 2023-01-17 | 株式会社リコー | 造形液及び造形物の製造方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60120778A (ja) * | 1983-12-05 | 1985-06-28 | Hitachi Chem Co Ltd | 導電性接着剤組成物 |
US5232962A (en) * | 1991-10-09 | 1993-08-03 | Quantum Materials, Inc. | Adhesive bonding composition with bond line limiting spacer system |
JP2983816B2 (ja) * | 1993-10-29 | 1999-11-29 | 住友ベークライト株式会社 | 導電性樹脂ペースト |
JP3760578B2 (ja) * | 1997-07-07 | 2006-03-29 | ソニー株式会社 | 銀ペーストダイボンド材および半導体装置 |
JPH1144705A (ja) * | 1997-07-28 | 1999-02-16 | Denso Corp | 半導体加速度センサおよびその製造方法 |
JP2001170957A (ja) * | 1999-12-20 | 2001-06-26 | Tokuyama Corp | ポリプロピレン射出成形体 |
JP2002367427A (ja) * | 2001-06-12 | 2002-12-20 | Murata Mfg Co Ltd | 導電性ぺースト、電子部品 |
JP2005220486A (ja) * | 2004-02-06 | 2005-08-18 | Toray Ind Inc | フッ素繊維交織織物および複合材料 |
JP4487143B2 (ja) | 2004-12-27 | 2010-06-23 | ナミックス株式会社 | 銀微粒子及びその製造方法並びに導電ペースト及びその製造方法 |
JP4770533B2 (ja) | 2005-05-16 | 2011-09-14 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
JP4247801B2 (ja) | 2006-11-24 | 2009-04-02 | ニホンハンダ株式会社 | ペースト状金属粒子組成物および接合方法 |
JP4470193B2 (ja) | 2008-05-01 | 2010-06-02 | ニホンハンダ株式会社 | 加熱焼結性銀粒子の製造方法、固形状銀の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP5011225B2 (ja) | 2008-07-09 | 2012-08-29 | ニホンハンダ株式会社 | 金属製部材用接合剤、金属製部材接合体の製造方法、金属製部材接合体、および電気回路接続用バンプの製造方法 |
JP5311337B2 (ja) * | 2008-11-28 | 2013-10-09 | セイコーインスツル株式会社 | サーマルヘッド、サーマルプリンタ及びサーマルヘッドの製造方法 |
JP2010171271A (ja) | 2009-01-23 | 2010-08-05 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2010180327A (ja) * | 2009-02-05 | 2010-08-19 | Nippon Steel Chem Co Ltd | ポリマー組成物 |
EP2227056B1 (en) | 2009-03-02 | 2019-04-24 | Alcatel Lucent | Method for enhancing the handover of a mobile station and base station for carrying out the method |
JP4633857B1 (ja) | 2009-04-16 | 2011-02-23 | ニホンハンダ株式会社 | 有機物被覆金属粒子の加熱焼結性の評価方法、加熱焼結性金属ペーストの製造方法、および金属製部材接合体の製造方法 |
JP5611537B2 (ja) * | 2009-04-28 | 2014-10-22 | 日立化成株式会社 | 導電性接合材料、それを用いた接合方法、並びにそれによって接合された半導体装置 |
JP5673536B2 (ja) * | 2009-07-21 | 2015-02-18 | 日亜化学工業株式会社 | 導電性材料の製造方法、その方法により得られた導電性材料、その導電性材料を含む電子機器、および発光装置 |
JP2011040915A (ja) | 2009-08-08 | 2011-02-24 | Minoru Tomizawa | 携帯通信端末機電源・モード切り替えシステム |
JP5426413B2 (ja) | 2010-01-28 | 2014-02-26 | ハリマ化成株式会社 | 銀ナノ粒子の製造方法 |
JP4928639B2 (ja) | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
JP2011198674A (ja) | 2010-03-23 | 2011-10-06 | Mitsubishi Electric Corp | 導電性接合材料、これを用いた半導体装置および半導体装置の製造方法 |
JP4870223B1 (ja) * | 2010-09-02 | 2012-02-08 | ニホンハンダ株式会社 | ペースト状銀粒子組成物、金属製部材接合体の製造方法および金属製部材接合体 |
JP2011010659A (ja) * | 2010-10-19 | 2011-01-20 | Tsujido Chemical Corp | 食品組成物 |
JP2012085582A (ja) | 2010-10-20 | 2012-05-10 | Kanagawa Acad Of Sci & Technol | フルオロキノロン系薬剤耐性菌の検出方法及びそのためのプライマー |
KR102158290B1 (ko) * | 2010-11-22 | 2020-09-21 | 도와 일렉트로닉스 가부시키가이샤 | 접합재료, 접합체, 및 접합방법 |
JP2013041884A (ja) * | 2011-08-11 | 2013-02-28 | Furukawa Electric Co Ltd:The | 半導体装置 |
JP5425962B2 (ja) | 2012-04-04 | 2014-02-26 | ニホンハンダ株式会社 | 加熱焼結性銀粒子の製造方法、ペースト状銀粒子組成物、固形状銀の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法 |
JP2014029897A (ja) | 2012-07-31 | 2014-02-13 | Hitachi Ltd | 導電性接合体およびそれを用いた半導体装置 |
JP5567636B2 (ja) * | 2012-10-05 | 2014-08-06 | 京セラケミカル株式会社 | 半導体接着用熱硬化型樹脂組成物及び半導体装置 |
JP6180769B2 (ja) * | 2013-03-29 | 2017-08-16 | トクセン工業株式会社 | フレーク状の微小粒子 |
US20150262728A1 (en) * | 2014-03-11 | 2015-09-17 | E I Du Pont De Nemours And Company | Electrically conductive paste composition and method of forming an electrical circuit on a polymer substrate |
-
2014
- 2014-12-26 EP EP14909128.2A patent/EP3238239A4/en not_active Ceased
- 2014-12-26 KR KR1020177020657A patent/KR102226649B1/ko active IP Right Grant
- 2014-12-26 WO PCT/JP2014/084765 patent/WO2016103528A1/en active Application Filing
- 2014-12-26 JP JP2017534360A patent/JP6571196B2/ja active Active
- 2014-12-26 CN CN201480084354.7A patent/CN107735854B/zh active Active
-
2015
- 2015-12-11 TW TW104141663A patent/TWI679709B/zh active
-
2017
- 2017-06-23 US US15/631,282 patent/US10446518B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10446518B2 (en) | 2019-10-15 |
US20170294404A1 (en) | 2017-10-12 |
CN107735854A (zh) | 2018-02-23 |
EP3238239A4 (en) | 2018-07-25 |
TWI679709B (zh) | 2019-12-11 |
WO2016103528A1 (en) | 2016-06-30 |
JP2018502455A (ja) | 2018-01-25 |
CN107735854B (zh) | 2020-12-15 |
EP3238239A1 (en) | 2017-11-01 |
KR20170101276A (ko) | 2017-09-05 |
JP6571196B2 (ja) | 2019-09-04 |
KR102226649B1 (ko) | 2021-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI679709B (zh) | 可燒結黏結材料及使用其之半導體裝置 | |
TWI694884B (zh) | 可燒結黏著材料以及使用上述材料之半導體裝置及製造半導體裝置之方法 | |
EP2940093B1 (en) | Thermally-conductive, electrically-conductive adhesive composition | |
JP6380792B2 (ja) | 銀ペースト及びそれを用いた半導体装置、並びに銀ペーストの製造方法 | |
TWI628253B (zh) | 導熱性導電性接著劑組成物 | |
TW201623459A (zh) | 導電性組成物及使用該導電性組成物的電子組件 | |
WO2016060088A1 (ja) | 半導体デバイス用層間充填剤組成物及び半導体デバイスの製造法 | |
WO2019013231A1 (ja) | 導電性接着剤組成物 | |
JP2014074132A (ja) | 半導体接着用熱硬化型樹脂組成物及び半導体装置 | |
JP2017101140A (ja) | 樹脂組成物および該樹脂組成物からなる層を有する半導体装置 | |
TW202035637A (zh) | 導電性接著劑組成物 | |
WO2016056655A1 (ja) | 半導体デバイスの製造法 |