TW201720552A - 黏晶接合構造 - Google Patents

黏晶接合構造 Download PDF

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Publication number
TW201720552A
TW201720552A TW105131781A TW105131781A TW201720552A TW 201720552 A TW201720552 A TW 201720552A TW 105131781 A TW105131781 A TW 105131781A TW 105131781 A TW105131781 A TW 105131781A TW 201720552 A TW201720552 A TW 201720552A
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Taiwan
Prior art keywords
copper
support
sintered body
interdiffusion
gold
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TW105131781A
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English (en)
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TWI739763B (zh
Inventor
Yoichi Kamikoriyama
Shinichi Yamauchi
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Mitsui Mining & Smelting Co
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Publication of TW201720552A publication Critical patent/TW201720552A/zh
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Publication of TWI739763B publication Critical patent/TWI739763B/zh

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    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08—Materials not undergoing a change of physical state when used
    • C09K5/14—Solid materials, e.g. powdery or granular
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Abstract

本發明係一種經由包含銅粉(31)之燒結體(32)之接合部位(30)將發熱體與金屬之支持體(20)接合而成的黏晶接合構造。支持體(20)至少於其最表面存在銅或金。以跨及支持體(20)與燒結體(32)之接合界面(40)之方式形成有支持體(20)之銅或金與燒結體(32)之銅的相互擴散部位(41)。適宜為於相互擴散部位(41)以跨及接合界面(40)之方式形成有結晶方位為相同方向之銅之結晶構造。

Description

黏晶接合構造
本發明係關於一種黏晶接合構造，更詳細而言，本發明係關於一種適宜用於半導體元件之晶粒與金屬之支持體之晶粒黏晶接合構造的黏晶接合構造。
關於半導體元件之接合，於專利文獻1中，記載有包含於一面具有集電極且於另一面具有發射電極之半導體元件、及於一面具有第一電極配線之絕緣基板之半導體裝置。絕緣基板之第一電極配線與半導體元件之集電極經由第一接合層而連接。該第一接合層成為將接合用材料燒結而成之燒結層，上述接合用材料包含含有碳酸銀等之金屬粒子前驅物、及含有熔解溫度為200度以上之羧酸金屬鹽之粒子之還原劑。並且，半導體元件與燒結層直接金屬鍵結。於該文獻中記載之技術之目的在於能夠以更低溫實現接合界面中之利用金屬鍵結的接合。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2012-094873號公報
且說，於汽車或家電製品、產業機器等眾多之領域中，降低反相器或轉換器之電力消耗成為必需之課題。因此，提出各種使用SiC或GaN等新穎材料以大幅改善機器之能量利用效率之半導體元件。該等半導體元件於其進行動作時伴隨大量之發熱，因此為了不因該熱而導致半導體元件受到損害，對半導體封裝要求充分之散熱對策。針對散熱，一般利用將半導體元件接合固定之引線框架或基板。於上述專利文獻1中記載之技術雖關於半導體元件之接合，但其係著眼於接合溫度者，未完成關於散熱之研究。 因此，本發明之課題在於改良以半導體元件之晶粒為代表之各種發熱體之接合構造，更詳細而言，在於提供一種能夠效率佳地擴散自發熱體產生之熱之接合構造。 本發明提供一種黏晶接合構造，其係經由包含銅粉之燒結體之接合部位將發熱體與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在銅或金， 以跨及上述支持體與上述燒結體之接合界面之方式，形成有該支持體之銅或金與該燒結體之銅的相互擴散部位。 本發明尤其提供一種晶粒黏晶接合構造，其係經由包含銅粉之燒結體之接合部位將半導體元件之晶粒與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在銅或金， 以跨及上述支持體與上述燒結體之接合界面之方式，形成有該支持體之銅或金與該燒結體之銅的相互擴散部位。 又，本發明提供一種接合接合構造，其係經由包含鎳粉之燒結體之接合部位將發熱體與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在鎳， 以跨及上述支持體與上述燒結體之接合界面之方式，形成有該支持體之鎳與該燒結體之鎳的相互擴散部位。 進而，本發明提供一種接合接合構造，其係經由包含銀粉之燒結體之接合部位將發熱體與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在銀， 以跨及上述支持體與上述燒結體之接合界面之方式形成有該支持體之銀與該燒結體之銀的相互擴散部位。
以下，一面參照圖式，一面基於本發明之較佳之實施形態對本發明進行說明。本發明之黏晶接合構造(以下，亦簡稱為「接合構造」)成為經由接合部位將發熱體與金屬之支持體接合而成之構造。接合部位包含銅粉之燒結體。發熱體之種類並無特別限制，不論是否為以發熱本身為目的之構件，使用時產生熱之構件均成為對象。作為此種構件之例，作為典型者可列舉半導體元件之晶粒(以下，亦簡稱為「晶粒」)，但並不限定於此，例如亦可使用CPU(Central Processing Unit，中央處理單元)、LED(Light Emitting Diode，發光二極體)元件、電阻器、電路等作為發熱體。又，於本發明中，自發熱體接受熱之其他構件，例如與發熱體接合且傳導自發熱體產生之熱而攜帶熱之構件亦理解為發熱體之一態樣。以下，列舉使用晶粒作為發熱體之晶粒黏晶接合構造為例，對本發明進行說明。 晶粒係將形成為晶圓之複數個半導體元件各個分離而成者，亦稱為晶片(chip)或裸晶片(bare chip)等。晶粒例如包含二極體、雙極電晶體、絕緣閘雙極性電晶體(IGBT，Insulated Gate Bipolar Transistor)、場效電晶體(FET，Field Effect Transistor)、金屬氧化膜半導體場效電晶體(MOSFET，Metallic Oxide Semiconductor Field Effecttransistor)、晶閘管等半導體元件。作為該等半導體元件之構成材料，例如可列舉矽(Si)、碳化矽(SiC)、氮化鎵(GaN)等。如下所述，本發明之接合構造係散熱性優異者，因此於使用稱為所謂功率裝置之發熱量較大之半導體元件作為本發明中成為接合之對象之晶粒的情形時，明顯地取得本發明之效果。作為此種功率裝置，例如可列舉IGBT、功率MOSFET，以及包含SiC及GaN之各種半導體元件。 支持體係用以固定並支持半導體元件之晶粒者。為了該目的，作為支持體，例如可使用引線框架或基板等。無論支持體為何種形態，該支持體亦包含金屬製者。金屬與陶瓷等其他材料相比為傳熱性良好之材料，因此，藉由使用金屬製之支持體，有半導體元件進行動作時產生之熱容易通過支持體釋放之優點。 構成支持體之金屬之種類並無特別限制，可使用與於半導體之技術領域中以往所使用之材料相同之材料。例如可使用銅、鋁等金屬單質。或者亦可使用銅-鐵合金、鐵-鎳合金、及不鏽鋼合金等合金。進而亦可使用將互不相同之金屬材料之層於厚度方向上積層複數層而成之積層構造的支持體。各層可為金屬單質，或者亦可為合金。作為積層構造之支持體，作為一例可列舉母材層包含鎳、銅、或鋁等單質或合金，最表層包含金單質之構造者。支持體成為至少於其最表面存在銅或金之狀態。支持體之最表面係發熱體或半導體元件之晶粒藉由接合部位而固定之面。即指與接合部位對向之面。作為成為至少於其最表面存在銅或金之狀態之支持體之例，可列舉：銅單質之支持體；銅-金合金等銅基合金之支持體；母材層包含鎳、銅、或鋁等單質或合金，最表層包含金單質之積層構造之支持體；母材層包含鎳、銅、或鋁等單質或合金，最表層包含含有金之合金之積層構造之支持體等。 半導體元件之晶粒與支持體經由接合部位而接合。接合部位包含銅粉之燒結體(以下，亦簡稱為「燒結體」)。接合部位可形成於晶粒中之與支持體對向之面之全域或該對向面中的一部分。構成接合部位之銅粉之燒結體係藉由以下方式形成者，即於特定之環境下，經過特定時間，以銅之熔點左右之溫度對包含複數個銅粒子之銅粉進行加熱，以於銅粒子間產生頸縮部位之方式鍵結。成為接合部位之原料之銅粉可為銅單質之粉末，或者亦可為以銅為母材之銅基合金粉末。較佳為使用銅單質之粉末。於構成接合部位之銅粉之燒結體中，亦可視需要包含除銅或銅合金以外之其他材料。作為此種材料，例如可列舉用以防止燒結體氧化之有機化合物等。 於本發明之接合構造中，以跨及支持體與燒結體之接合界面之方式形成有支持體之金屬元素與燒結體之構成元素的相互擴散部位。即，支持體之銅或金與燒結體之銅相互擴散之部位夾著接合界面，自支持體側遍及燒結體側而形成。一面參照圖1，一面對該狀態進行說明。如該圖所示，接合構造1具有經由包含含有複數個銅粒子31之銅粉之燒結體32之接合部位30將晶粒10與支持體20接合之構造。進而，晶粒黏晶接合構造1具有支持體20與燒結體32之接合界面40。於接合構造1以跨及接合界面40之方式形成有支持體20之金屬元素與燒結體32之構成元素的相互擴散部位41。沿著沿正交於接合界面之剖面之方向即縱截面方向X，即圖1中之紙面之上下方向觀察接合構造1時，相互擴散部位41係以跨及接合界面40之方式沿著縱截面方向X而存在。於該縱截面下觀察時，關於沿著接合界面之方向即平面方向Y，即圖1中之紙面之左右方向，構成相互擴散部位41之各個銅粒子31至多於接合界面中遍及使支持體20向平面方向Y伸長之區域R而存在。 詳細而言，相互擴散部位41如圖2所示，沿著縱截面方向X觀察時，構成與支持體20接合之銅粒子31之複數個一級粒子(primary particle)31a不具有沿著相當於接合界面40之面之晶粒界。所謂一級粒子，就外觀上之幾何學形態而判斷，指被斷定為作為粒子之最小單位之物體。 於相互擴散部位41中，其構成元素進行金屬鍵結。具體而言，於存在於支持體20之最表層之金屬元素與燒結體32之構成元素相同的情形時，於相互擴散部位41形成有包含金屬單質或合金之單一相。於支持體20之金屬元素與燒結體32之構成元素不同之情形時，形成有包含支持體20之金屬元素與燒結體32之構成元素之合金相。所謂金屬鍵結係利用自由電子所進行之金屬原子之間之鍵結。 於接合構造1形成有相互擴散部位41，且該相互擴散部位41包含進行金屬鍵結之相，藉此於相互擴散部位41存在自由電子，因此其傳熱性變得良好。其結果為，於半導體元件之晶粒10因其動作而導致發熱之情形時，該熱容易傳導至夾著接合部位30而位於相反側之構件即支持體20。換言之，於半導體元件之晶粒10產生之熱被散放。藉此，半導體元件不容易受到熱損害。該點就半導體元件之動作穩定性或可靠性之方面而言較為重要。 於支持體20之最表面包含銅單質，且銅粉亦包含銅單質之情形時，相互擴散部位41包含含有銅單質之結晶構造之單一相。該單一相之結晶構造如圖2所示，較佳為於夾著接合界面40而位於燒結體32側之部位41a與位於支持體20側之部位41b，結晶方位成為相同方向。若如此於夾著接合界面40而位於燒結體32側之相互擴散部位41a與位於支持體20側之相互擴散部位41b，結晶方位成為相同方向，則其結晶方位與接合界面40交叉，相互擴散部位41a、41b間之自由電子之往返變得順利，相互擴散部位41之傳熱性變得更加良好。其結果為，於半導體元件之晶粒10產生之熱更容易散放，半導體元件更不容易受到熱損害。銅之結晶構造之結晶方位能夠根據相互擴散部位41之穿透式電子顯微鏡(TEM，Transmission-type Electron Microscope)像進行確認。 再者，為了在相互擴散部位以跨及接合界面之方式形成結晶方位為相同方向之銅之結晶構造，較佳為使用銅粉作為接合部位之銅源。於使用其他銅源，例如氧化銅(II)等各種氧化銅之情形時，雖能夠獲得燒結體，但不容易於相互擴散部位以跨及接合界面之方式形成結晶方位為相同方向之銅之結晶構造。 於相互擴散部位41中，銅之結晶構造中之任一面之結晶方位成為相同方向即可，無需特定之面之結晶方位成為相同方向。於下述實施例(圖4)中，雖對銅之{111}面之結晶方位進行測定，其原因為容易對銅之{111}面進行TEM觀察，並非要求銅之{111}面成為相同方向。又，於1個銅粒子31具有複數個單晶之結晶構造(晶粒)之情形時，各結晶構造中之結晶方位亦可互不相同。 就效率更佳地經由相互擴散部位41進行傳熱之觀點而言，結晶方位為相同方向之銅之結晶構造較佳為接合界面40中之橫斷長(於圖2中，為各晶粒之寬度或平面方向Y之長度)為10 nm以上，進而較佳為50 nm以上。橫斷長之上限無特別限定，典型為500 nm左右。該橫斷長能夠根據相互擴散部位41之穿透式電子顯微鏡(TEM)像進行測定。橫斷長係對5處之部位進行測定，設為其平均值。 就與上述相同之觀點而言，結晶方位為相同方向之銅之結晶構造較佳為跨及接合界面40之厚度於最大位置為10 nm以上，進而較佳為50 nm以上。跨及接合界面40之厚度之上限無特別限定，典型為1000 nm左右，更典型為500 nm左右。該厚度能夠根據相互擴散部位41之穿透式電子顯微鏡(TEM)像進行測定。厚度係對沿著接合界面面方向之等間隔之5處之部位進行測定，設為其最大值。 於具有以上之構造之接合構造1中，燒結體32包含銅，且支持體20為金屬製，因此燒結體32與支持體20電性導通。另一方面，燒結體32與晶粒10可電性導通，或者亦可不導通。若鑒於本發明之目的在於自半導體元件之晶粒10產生之熱之擴散，則顯然於本發明中，燒結體32與支持體20電性導通，或燒結體32與晶粒10電性導通並非本質。 以上之說明係接合部位包含銅粉之燒結體之情形之說明，但接合部位亦可包含鎳粉之燒結體或銀粉之燒結體代替銅之燒結體。於該情形時，關於支持體之最表面之材質，使用鎳粉之燒結體時，該材質為鎳，使用銀粉之燒結體時，該材質為銀。並且，於本發明之接合構造中，使用鎳粉之燒結體時，以跨及支持體與燒結體之接合界面之方式形成有該支持體之鎳與該燒結體之鎳的相互擴散部位。另一方面，使用銀粉之燒結體時，以跨及支持體與燒結體之接合界面之方式形成有該支持體之銀與該燒結體之銀的相互擴散部位。 於在接合部位形成有鎳之相互擴散部位之情形、及形成有銀之相互擴散部位之情形之任一情形時，於該相互擴散部位中，就接合部位之傳熱性變得更加良好之方面而言較佳為以跨及接合界面之方式形成有結晶方位為相同方向之鎳或銀之結晶構造。於相互擴散部位中，鎳或銀之結晶構造中之任一面之結晶方位成為相同方向即可，無需特定之面之結晶方位成為相同方向。 對關於接合部位包含鎳或銀之情形之詳細情況未特別進行說明之方面，適當應用以上所述之接合部位包含銅之情形之詳細情況。 於圖3中，示出本發明之晶粒黏晶接合構造之另一實施形態。再者，對關於本實施形態未特別說明之方面，適當應用對圖1及圖2所示之實施形態之說明。本實施形態係關於一種使母材20a之最表面包含金單質20b之支持體20與包含銅單質之銅粉燒結而形成之接合構造1。於該接合構造1中，相互擴散部位41較佳為包含Cu3 Au。Cu3 Au較佳為成為合金之狀態。包含Cu3 Au之部位41c之傳熱性良好。其結果為，於半導體元件之晶粒10產生之熱進一步散熱。藉此，半導體元件更不容易受到熱損害。 合金之狀態之Cu3 Au部位41c存在於相互擴散部位41能夠藉由進行以相互擴散部位41為對象之元素映射，並測定沿著縱截面方向X之元素分佈而確認。於該元素分佈中，銅與金之莫耳比為3：1，且可確認維持該比率之區域時，可判斷於該區域存在合金之狀態之Cu3 Au。又，藉由相互擴散部位41之電子繞射測定，亦能夠判斷是否存在合金之狀態之Cu3 Au。 圖3所示之實施形態之接合構造1進而較佳為相互擴散部位41除了包含Cu3 Au部位41c以外，還包含含有金與銅之固溶體之固溶部位41d。固溶部位41d係於銅之母材中金固溶而成之部位。於固溶部位41d中，較佳為沿著接合構造1之縱截面方向X觀察時銅之分佈自燒結體32側朝向支持體20側遞減。另一方面，關於金之分佈，較佳為沿著接合構造1之縱截面方向X觀察時，自燒結體32側朝向支持體20側遞增。固溶部位41d於相互擴散部位41中，較佳為位於Cu3 Au部位41c與燒結體32之間，藉由此種配置形態，而具有提高Cu3 Au部位41c與燒結體32之接合強度之功能。又，固溶部位41d亦具有順利進行自燒結體32向Cu3 Au部位41c之傳熱之功能。就使該等功能更顯著之觀點而言，固溶部位41d中之銅與金之比率較佳為相對於銅1莫耳，金以0.01莫耳以上且0.33莫耳以下之範圍內進行變化。 於相互擴散部位41存在銅與金之固溶部位41d能夠藉由進行以固溶部位41d為對象之元素映射，並測定沿著縱截面方向X之元素分佈而確認。又，藉由固溶部位41d之電子繞射測定，亦可判斷銅與金是否形成固溶體。 本實施形態之接合構造1亦可為使如下半導體元件之晶粒10與包含銅單質之銅粉燒結而形成者，該半導體元件之晶粒10於其下表面，即與支持體20對向之面具有包含金單質之表面層10a。於該情形時，較佳為以跨及晶粒10與燒結體32之接合界面43之方式形成有包含形成於晶粒10之下表面之表面層10a之金、及作為燒結體之構成元素之銅之相互擴散部位44。該相互擴散部位44較佳為包含含有Cu3 Au之部位44c。相互擴散部位44之詳細情況與以上所述之相互擴散部位41相同，故而省略重複之說明。 進而，接合構造1中之相互擴散部位44進而較佳為除Cu3 Au部位44c以外，還具有包含金與銅之固溶體之固溶部位44d。固溶部位44d較佳為位於Cu3 Au部位44c與燒結體32之間。於固溶部位44d中，較佳為沿著接合構造1之縱截面方向X觀察時銅之分佈自燒結體32側朝向晶粒10側遞減。另一方面，關於金之分佈，較佳為沿著接合構造1之縱截面方向X觀察時自燒結體32側朝向晶粒10側遞增。 藉由於晶粒10與燒結體32之間形成有包含Cu3 Au之相互擴散部位44，或相互擴散部位44除Cu3 Au部位44c以外還包含固溶部位44d，而於晶粒10產生之熱順利傳導至燒結體32，進而該熱經由支持體20側之相互擴散部位41傳導至支持體20。其結果為，於半導體元件之晶粒10產生之熱更進一步散放。藉此，半導體元件更進一步地不容易受到熱損害。 其次，對上述接合構造1之適宜之製造方法進行說明。首先，對使用銅粒子包含銅單質之銅粉、及最表面包含銅單質之支持體製造圖1所示之接合構造1之情形進行說明。 就操作性之方面而言，較佳為銅粉一般以焊膏之狀態被提供。於焊膏中，較佳為除銅粉以外還包含有機溶劑。作為有機溶劑，可無特別限制地使用與用於銅之導電性焊膏者相同者。例如可列舉：單醇、多元醇、多元醇烷基醚、多元醇芳醚、酯類、含氮之雜環化合物、醯胺類、胺類、飽和烴等。該等有機溶劑可單獨使用或將2種以上組合而使用。焊膏中之銅之濃度適當調整為適於操作之濃度。 焊膏狀態之銅粉施加於支持體20中之最表面。可使用例如分注器等裝置將焊膏狀態之銅粉施加於支持體20中之最表面。此時，焊膏狀態之銅粉之配置形態可為如骰子之點般之點狀，亦可為線狀或面狀。然後，將晶粒10載置於焊膏狀態之銅粉之上。藉由於該狀態下進行特定溫度下之加熱，而發生構成銅粉之銅粒子彼此之燒結，產生燒結體32。與此同時，亦產生銅粒子與支持體20之最表面之燒結、及銅粒子與晶粒10之下表面之燒結。該等之結果為，形成晶粒黏晶接合構造1，晶粒10經由燒結體32固定於支持體20上。並且，以跨及支持體20與燒結體32之接合界面之方式形成相互擴散部位41。 關於燒結之條件，溫度較佳為150℃以上且400℃以下，進而較佳為230℃以上且300℃以下。時間係以溫度為該範圍內為條件，較佳為5分鐘以上且60分鐘以下，進而較佳為7分鐘以上且30分鐘以下。環境可使用大氣等氧化性環境、氮或氬等惰性環境、氮-氫等還原性環境。又，亦可於真空下進行燒結。尤其是若於三乙醇胺之存在下，氮等惰性環境下進行燒結，則於相互擴散部位以跨及接合界面之方式順利地形成結晶方位為相同方向之銅的結晶構造，故而較佳。 於接合構造1中之接合部位包含鎳或銀之情形時，使用鎳粉或銀粉代替上述銅粉即可。尤其是關於鎳粉，使用例如藉由日本專利特開2009-187672號公報等中記載之所謂多元醇法而製造之鎳粉由於在相互擴散部位以跨及接合界面之方式順利地形成結晶方位為相同方向之鎳的結晶構造，故而較佳。另一方面，關於銀粉，若使用日本專利特開2009-242913號公報等中記載之所謂濕式還原法而製造之銀粉，則於相互擴散部位以跨及接合界面之方式順利地形成結晶方位為相同方向之銀之結晶構造，故而較佳。 於使用鎳粉代替銅粉之情形時，較佳為該粉之一級粒子之平均粒徑D為20 nm以上且300 nm以下。於使用銀粉代替銅粉之情形時，較佳為該粉之一級粒子之平均粒徑為0.1 μm以上且2 μm以下。 其次，對使用銅粒子包含銅單質之銅粉、最表面包含金單質之支持體、及下表面包含金單質之晶粒製造圖3所示之接合構造1之情形進行說明。 關於銅粉，較佳為與上述方法同樣地以焊膏之狀態使用。焊膏狀態之銅粉使用例如分注器等裝置施加於支持體20中之最表面。此時，如上所述，焊膏狀態之銅粉可施加於晶粒中之與支持體對向之面之全域或該對向面中的一部分。例如，焊膏狀態之銅粉之配置形態可為如骰子之點般之點狀，亦可為線狀或面狀。然後，將晶粒10載置於焊膏狀態之銅粉之上。藉由於該狀態下進行特定溫度下之加熱，而發生構成銅粉之銅粒子彼此之燒結，產生燒結體32。與此同時，銅粒子31與支持體20之最表面之金及晶粒10之下表面之金形成頸縮，銅主要向金之側擴散。並且，支持體20之最表面之金及晶粒10之下表面之金形成以Cu3 Au為主體之金屬鍵，其成為相互擴散部位41、44。進而於相互擴散部位41、44中形成銅與金之固溶部位41d、44d。燒結之條件與上述情況相同。 於上述各製造方法中，為了順利地形成各相互擴散部位，有利的是使用特定者作為銅粉。具體而言，若使用如下銅粉，則能夠順利地形成各相互擴散部位，即一級粒子之平均粒徑D為0.15 μm以上且0.6 μm以下，一級粒子之平均粒徑D與基於BET(Brunauer-Emmett-Teller，布厄特)比表面積之按真球換算之平均粒徑DBET 之比即D/DBET 之值為0.8以上且4.0以下，且於粒子表面不具有用以抑制粒子間之凝集之層。較佳為單獨使用該銅粉，或者與其他銅粉併用。就抑制燒結時之收縮，提高接合強度之觀點而言，較佳為併用粒徑大於該銅粉之(例如平均粒徑D為1～5 μm左右之)其他銅粉。只要為不損害本發明之意義之程度，則亦可包含於粒子表面具備用以抑制粒子間之凝集之層之銅粉。於使該銅粉與其他銅粉併用之情形時，該銅粉能夠以相對於銅粉整體較佳為50質量%以上，進而較佳為55質量%以上之比率使用。以下，對該銅粉進行說明。 藉由將銅粉之一級粒子之平均粒徑D設定為0.6 μm以下，而於使用該銅粉形成燒結體32時，銅粉容易於低溫下燒結。又，不易於粒子31間產生空隙，能夠使燒結體32之比電阻下降。另一方面，藉由將銅粉之一級粒子之平均粒徑D設定為0.15 μm以上，能夠防止燒結銅粉時粒子收縮。就該等觀點而言，上述一級粒子之平均粒徑D較佳為0.15～0.6 μm，更佳為0.15～0.4 μm。銅粉之一級粒子之平均粒徑D係體積平均粒徑，該體積平均粒徑係使用掃描式電子顯微鏡，以倍率10,000倍或30,000倍觀察銅粉，對視野中之200個粒子測定水平方向斐瑞特直徑，並自測定之值換算為球而獲得。就提高銅粉之分散性之觀點而言，銅粒子31之粒子形狀較佳為球狀。 銅粉較佳為於粒子表面不具有用以抑制粒子間之凝集之層(以下，亦稱為保護層)。銅粉具有上述數值範圍之平均粒徑D，且於粒子表面不具有保護層非常有助於其良好之低溫燒結性。上述保護層例如為了提高分散性等，藉由於銅粉製造之後續步驟中利用表面處理劑對銅粒子表面進行處理而形成。作為此種表面處理劑，可列舉硬脂酸、月桂酸、油酸此類脂肪酸等各種有機化合物。又，亦可列舉含有矽、鈦、鋯等半金屬或金屬之偶合劑等。進而，即便為於銅粉製造之後續步驟中不使用表面處理劑之情形，亦存在藉由於利用濕式還原法製造銅粉時，向含有銅源之反應液中添加分散劑而形成保護層之情況。作為此種分散劑，可列舉焦磷酸鈉等磷酸鹽、或阿拉伯膠等有機化合物。 就使本發明之銅粉之低溫燒結性變得更加良好之觀點而言，該銅粉較佳為形成上述保護層之元素之含量儘量地少。具體而言，先前作為保護層之成分而存在於銅粉中之碳、磷、矽、鈦及鋯之含量之總和相對於銅粉，較佳為0.10質量%以下，進而較佳為0.08質量%以下，進而更佳為0.06質量%以下。 上述含量之總和越小越佳，若存在0.06質量%左右之內之量，則能夠充分地提高銅粉之低溫燒結性。又，若銅粉之碳含量過多，則燒結銅粉而形成燒結體32時產生含碳之氣體，存在因該氣體而導致於膜產生龜裂，或膜自基板剝離之情況。於在銅粉中上述含量之總和較低之情形時，能夠防止因含碳之氣體之產生而導致之不良狀況。 銅粉較佳為雜質之含量較少，銅之純度較高者。具體而言，銅粉中之銅之含量較佳為98質量%以上，進而較佳為99質量%以上，進而更佳為99.8質量%以上。 銅粉係儘管於粒子表面不具有用以抑制粒子31間之凝集之層，但一級粒子之凝集亦較少者。一級粒子之凝集之程度可將基於BET比表面積之按真球換算之平均粒徑DBET 與一級粒子之平均粒徑D之比即D/DBET 之值作為標準而進行評估。銅粉之D/DBET 之值為0.8以上且4.0以下。D/DBET 之值係表示與銅粉之粒徑均勻且不凝集之理想之單分散狀態相比，粒徑分佈寬廣至何程度之標準，可用於凝集度之推定。 D/DBET 之值之評估基本地除了於銅粉之粒子表面細孔較少且均質以外，還以具有連續分佈(1山分佈)為前提條件。於該前提條件下，D/DBET 之值為1之情形時，銅粉可理解為上述理想之單分散狀態。另一方面，可推測D/DBET 之值越大於1，銅粉之粒徑分佈越寬廣，粒徑越不一致，或凝集越多。D/DBET 之值小於1之情況較為罕見，其多見於在處於不合上述前提條件之狀態之情形時觀察銅粉之情況。所謂不合上述前提條件之狀態例如可列舉：於粒子表面有細孔之狀態、或粒子表面不均勻之狀態、局部存在凝集之狀態等。 就使銅粉為一級粒子之凝集更少者之觀點而言，D/DBET 之值較佳為0.8以上且4.0以下，更佳為0.9以上且1.8以下。DBET 之值可藉由利用氣體吸附法測定銅粉之BET比表面積而求出。BET比表面積藉由一點法，使用例如島津製作所(股)製造之Flowsorb II2300進行測定。將測定粉末之量設為1.0 g，預脫氣條件設為150℃下，15分鐘。平均粒徑DBET 係藉由下述式自所獲得之BET比表面積(SSA)之值及銅之室溫左右之密度(8.94 g/cm3 )而求出。 DBET (μm)＝6/(SSA(m2 /g)×8.94(g/cm3 )) DBET 之值本身較佳為0.08 μm以上且0.6 μm以下，進而較佳為0.1 μm以上且0.4 μm以下，進而更佳為0.2 μm以上且0.4 μm以下。又，銅粉中之BET比表面積之值較佳為1.7 m2 /g以上且8.5 m2 /g以下，進而較佳為2.5 m2 /g以上且4 m2 /g以下。 銅粉之微晶徑較佳為60 nm以下，進而較佳為50 nm以下，進而更佳為40 nm以下。下限值較佳為20 nm。藉由將微晶徑之大小設定為該範圍，而銅粉之低溫燒結性變得更加良好。關於微晶徑，使用例如Rigaku(股)製造之RINT-TTRIII進行銅粉之X射線繞射測定，使用所得之{111}峰值，藉由謝樂(Scherrer)法算出微晶徑(nm)。 此種銅粉具有即便於低溫下亦容易燒結之特徵。藉由利用即便於低溫下亦容易燒結之銅粉，而於藉由該銅粉之燒結體將晶粒與支持體接合時，於晶粒或支持體與燒結體之間容易形成金屬鍵，其結果為，能夠容易地獲得本發明中之相互擴散部位。 銅粉為於低溫下容易燒結者可將銅粉之燒結初始溫度為標準進行判斷。本發明中適宜使用之銅粉之燒結初始溫度較佳為170℃以上且240℃以下，進而較佳為170℃以上且235℃以下，進而更佳為170℃以上且230℃以下。 上述燒結初始溫度可藉由將銅粉靜置於3體積%H2 -N2 環境之爐中，使爐之溫度逐漸上升而測定。具體而言，可藉由以下所述之方法進行測定。燒結是否開始係利用掃描式電子顯微鏡觀察自爐中取出之銅粉，根據是否於粒子彼此之間發生面締合而判斷。所謂面締合係指以一個粒子之面與另一粒子之面連續之方式粒子彼此一體化之狀態。 [燒結初始溫度之測定方法] 將銅粉載置於鋁製之台，於3體積%H2 -N2 環境下，以160℃之設定溫度保持1小時。其後，自爐中取出銅粉，使用掃描式電子顯微鏡以倍率50,000倍觀察銅粉，檢查有無面締合。於未觀察到面締合之情形時，將爐之設定溫度自上述設定溫度重新設定為高10℃之溫度，於新的設定溫度下，與上述同樣地檢查有無面締合。反覆進行該操作，將觀察到面締合之爐之設定溫度設為燒結初始溫度(℃)。 其次，對上述銅粉之適宜之製造方法進行說明。本製造方法之特徵之一為，於使用肼作為還原劑之濕式之銅離子之還原過程中，作為溶劑，使用與水具有相容性，且能夠使水之表面張力下降之有機溶劑。本製造方法藉由使用該有機溶劑，能夠容易且簡便地製造銅粉。 於本製造方法中，將以水及上述有機溶劑為液體介質且包含一價或二價之銅源之反應液與肼混合，使該銅源還原而生成銅粒子。於本製造方法中，不進行刻意形成保護層之操作。 作為上述有機溶劑，例如可列舉：一元醇、多元醇、多元醇之酯、酮、醚等。作為一元醇，較佳為碳原子數為1以上且5以下，尤其是1以上且4以下者。作為具體例，可列舉：甲醇、乙醇、正丙醇、異丙醇、第三丁醇等。 作為多元醇，可列舉：乙二醇、1,2-丙二醇及1,3-丙二醇等二醇；甘油等三醇等。作為多元醇之酯，可列舉上述多元醇之脂肪酸酯。作為脂肪酸，例如較佳為碳原子數為1以上且8以下，尤其是1以上且5以下之一元脂肪酸。多元醇之酯較佳為至少具有1個羥基。 作為酮，較佳為與羰基鍵結之烷基之碳原子數為1以上且6以下，尤其是1以上且4以下者。作為酮之具體例，可列舉：甲基乙基酮、丙酮等。作為醚，可列舉：二甲醚、乙基甲基醚、二乙醚、或作為環狀醚之氧環丁烷、四氫呋喃、四氫吡喃、或作為聚醚之聚乙二醇、聚丙二醇等高分子化合物等。 就經濟性及安全性等觀點而言，較佳為使用上述各種有機溶劑中之一元醇。 關於上述液體介質，上述有機溶劑之質量相對於水之質量之比率(有機溶劑之質量/水之質量)較佳為1/99至90/10，進而較佳為1.5/98.5至90/10。若水及有機溶劑之比率為該範圍內，則能夠使濕式還原時之水之表面張力適度地下降，能夠容易地獲得D及D/DBET 之值處於上述範圍內之銅粉。 上述液體介質較佳為僅由上述有機溶劑及水而構成。其就不使用分散劑等而製造不具有保護層且雜質較少之銅粉之觀點等而言較佳。 於本製造方法中，藉由使銅源溶解或分散於上述液體介質而製備反應液。作為反應液之製備方法，例如可列舉將液體介質與銅源混合並進行攪拌之方法。於反應液中，銅源相對於液體介質之比率相對於銅源1 g，液體介質之質量較佳為設為4 g以上且2000 g以下，進而較佳為設為8 g以上且1000 g以下。若銅源相對於液體介質之比率為該範圍內，則銅粉合成之生產性變高，故而較佳。 作為上述銅源，可使用一價或二價之各種銅化合物。尤佳為使用乙酸銅、氫氧化銅、硫酸銅、氧化銅或氧化亞銅。若使用該等銅化合物作為銅源，則能夠容易地獲得D及D/DBET 之值處於上述範圍內之銅粉。又，能夠獲得雜質較少之銅粉。 然後，將上述反應液與肼混合。肼之添加量設為如相對於銅1莫耳，較佳為成為0.5莫耳以上且50莫耳以下，進而較佳為成為1莫耳以上且20莫耳以下之量。若肼之添加量為該範圍，則容易獲得D/DBET 之值成為上述範圍內之銅粉。根據相同之理由，反應液之溫度較佳為自混合開始時間點至結束時間點，維持為40℃以上且90℃以下，尤其是50℃以上且80℃以下。根據相同之理由，較佳為自混合開始時間點至反應結束時間點，連續攪拌反應液。 上述反應液與肼之混合較佳為按以下之(a)及(b)之任一者之方式進行。藉由如此，能夠有效地防止因急遽之反應而產生不良情況。 (a)隔開時間分複數次將肼添加至上述反應液中。 (b)連續地經過特定時間將肼添加至上述反應液中。 於(a)之情形時，複數次較佳為2次以上且6次以下左右。肼之各添加之間隔為5分鐘以上且90分鐘以下左右。 於(b)之情形時，上述特定時間較佳為1分鐘以上且180分鐘以下左右。較佳為反應液於與肼之混合結束後，仍繼續進行攪拌而熟化。原因在於藉由如此，容易獲得D/DBET 之值成為上述範圍內之銅粉。 於本製造方法中，僅適用肼作為還原劑由於獲得雜質較少之銅粉，故而較佳。如此，能夠獲得目標銅粉。 以上，基於本發明之較佳之實施形態對本發明進行了說明，但本發明並不限制於上述實施形態。例如，於圖1所示之實施形態中，相互擴散部位41中之銅之結晶構造之結晶方位亦可將下述實施例中採用之除{111}面以外之面作為對象。 又，上述各實施形態係關於使用半導體元件之晶粒作為發熱體之晶粒黏晶接合構造者，但本發明不限定於此，可將本發明應用於使用除半導體元件之晶粒以外之構件作為發熱體之黏晶接合。 [實施例] 以下，藉由實施例更詳細地對本發明進行說明。然而，本發明之範圍並不限制於該實施例。只要不特別說明，則「%」及「份」分別指「質量%」及「質量份」。 [實施例1] 於本實施例中，製造圖1所示之構造之晶粒黏晶接合構造。 (1)銅粉及銅焊膏之製造 準備安裝有攪拌翼之容量500 ml之圓底燒瓶。向該圓底燒瓶中放入作為銅源之乙酸銅一水合物15.71 g。進而向圓底燒瓶中加入水10 g、及作為有機溶劑之異丙醇70.65 g而獲得反應液。一面以150 rpm攪拌該反應液，一面將液溫提高至60℃。持續攪拌，並向反應液中一次性添加肼一水合物1.97 g。然後，攪拌反應液30分鐘。其後，向反應液中添加肼一水合物17.73 g。進而攪拌反應液30分鐘。其後，向反應液中添加肼一水合物7.88 g。其後，將液溫保持為60℃，持續攪拌反應液1小時。反應結束後，使反應液全量固液分離。使用純水藉由傾析法對所獲得之固形物成分進行洗淨。反覆進行洗淨直至上清液之導電率成為1000 μS/cm以下為止。使洗淨物固液分離。對所獲得之固形物成分添加乙醇160 g，使用加壓過濾器進行過濾。於常溫下對所獲得之固形物成分進行減壓乾燥，而獲得目標銅粉。該銅粉之一級粒子之平均粒徑D為0.19 μm，BET比表面積(SSA)為3.91 m2 /g，DBET 為0.17 μm，D/DBET 為1.1，C、P、Si、Ti及Zr之含量之總和為0.05%，銅含量超過99.8%，微晶徑為35 nm，燒結初始溫度為170℃。以56：44之質量比率將該銅粉與三井金屬礦業(股)製造之包含濕式合成銅粒子之銅粉即CS-20(商品名)(利用雷射繞射散射式粒度分佈測定法所得之累積體積50容量%中之體積累積粒徑D50 ＝3.0 μm)混合，而獲得混合銅粉。將該混合銅粉、作為混合有機溶劑之三乙醇胺、3-甘油氧丙基三甲氧基矽烷、及甲醇混合而製備銅焊膏。混合有機溶劑中之三乙醇胺之比率為54%，3-甘油氧丙基三甲氧基矽烷之比率為29%，甲醇之比率為17%。銅焊膏中之混合銅粉之比率為86%，有機溶劑之比率為14%。 (2)晶粒黏晶接合構造之製造 藉由使用厚度50 μm之樹脂膜版之網版印刷於10 mm見方、厚度0.5 mm之包含無氧銅(純度99.96%)之支持體對5處塗佈直徑0.8 mm形狀之銅焊膏。於支持體之中央，作為晶粒而載置5 mm見方、厚度1 mm之無氧銅(純度99.96%)。於氮環境下，以260℃進行焙燒10分鐘，而獲得目標接合構造。將所獲得之接合構造中之燒結體與支持體之接合界面附近之TEM像示於圖4(a)至(c)。如該等圖所明瞭，判斷以跨及支持體與燒結體之接合界面之方式形成有支持體之銅與燒結體之銅之相互擴散部位，且於該相互擴散部位以跨及接合界面之方式形成有結晶方位為相同方向之銅之結晶構造。結晶方位為相同方向之銅之結晶構造之接合界面中之橫斷長為94 nm。又，跨及接合界面之銅之結晶構造之厚度至多為170 nm。 [比較例1] (1)銅焊膏之製造 作為混合銅粉，使用以56：44之質量比率將三井金屬礦業(股)製造之包含濕式合成銅粒子之銅粉即1050Y(商品名)與三井金屬礦業(股)製造之包含濕式合成銅粒子之銅粉即1300Y(商品名)混合而得者。比較例1與比較例2中使用之2種銅粉均為於表面具備有機保護層者。除此以外，與實施例1(1)同樣地製備銅焊膏。 (2)晶粒黏晶接合構造之製造 與實施例1之(2)同樣地形成接合構造。所獲得之接合構造不具有僅維持晶粒與燒結體與支持體之接合之機械強度，無法進行所獲得之接合構造之散熱性之評估及燒結體與支持體之接合界面附近的TEM像觀察。 [比較例2] (1)銅焊膏之製造 作為混合銅粉，使用以56：44之質量比率將三井金屬礦業(股)製造之包含濕式合成銅粒子之銅粉即1050Y(商品名)與三井金屬礦業(股)製造之包含濕式合成銅粒子之銅粉即1300Y(商品名)混合而得者。作為混合樹脂，準備將日本化藥(股)製造之雙酚F型環氧樹脂即RE-303SL、日本化藥(股)製造之酚系酚醛清漆型環氧樹脂即RE-306、日本化藥(股)製造之雙酚A型環氧樹脂即RE-310S、日本化藥(股)製造之液狀環氧樹脂即GAN、日本化藥(股)製造之硬化劑即Kayahard MCD、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-甘油氧丙基三甲氧基矽烷、及Ajinomoto Fine-Techno(股)製造之硬化促進劑即Amicure MY24混合而得者。將混合銅粉與混合樹脂混合，而製備銅焊膏。混合樹脂中之RE-303SL之比率為31%，RE-306之比率為15%，RE-310S之比率為15%，GAN之比率為6%，Kayahard MCD之比率為28%，2-(3,4-環氧環己基)乙基三甲氧基矽烷之比率為1%，3-甘油氧丙基三甲氧基矽烷之比率為1%，Amicure MY24之比率為3%。銅焊膏中之混合銅粉之比率為89%，混合樹脂之比率為11%。 (2)晶粒黏晶接合構造之製造 與實施例1之(2)同樣地形成接合構造。攝影所獲得之接合構造中之燒結體與支持體之接合界面附近之TEM像，結果未觀察到以跨及接合界面之方式形成有結晶方位為相同方向之銅之結晶構造的相互擴散部位。 [比較例3] 比較例3為不使用銅粉之接合構造之例。 (1)焊錫膏之準備 準備市售之焊錫膏(組成：Sn63質量%-Pb37質量%，HONG KONG WELSOLO METAL TECHNOLOGY CO.,LIMITED製造)。 (2)晶粒黏晶接合構造之製造 藉由使用厚度50 μm之樹脂膜版之網版印刷於10 mm見方、厚度0.5 mm之包含無氧銅(純度99.96%)之支持體對5處塗佈直徑0.8 mm形狀之焊錫膏。於支持體之中央，作為晶粒而載置5 mm見方、厚度1 mm之無氧銅(純度99.96%)。於氮環境下，以200℃進行焙燒10分鐘，而獲得接合構造。 [實施例2] 於本實施例中，製造圖3所示之構造之晶粒黏晶接合構造。 (1)銅粉及銅焊膏之製造 於實施例1中，將異丙醇之使用量設為39.24 g，將水之使用量設為50 g。除此以外與實施例1同樣地獲得銅粉。該銅粉之平均粒徑D為0.24 μm，BET比表面積(SSA)為3.17 m2 /g，DBET 為0.21 μm，D/DBET 為1.2，C、P、Si、Ti及Zr之含量之總和為0.04%，銅含量超過99.8%，微晶徑為35 nm，燒結初始溫度為170℃。以56：44之質量比率將該銅粉與三井金屬礦業(股)製造之包含濕式合成銅粒子之銅粉即CS-20(商品名)混合，而獲得混合銅粉。其後，與實施例1同樣地製備銅焊膏。 (2)晶粒黏晶接合構造之製造 使用於10 mm見方、厚度0.5 mm之包含鎳之母材之表面形成有厚度1 μm之鍍金層之支持體。藉由使用厚度50 μm之樹脂膜版之網版印刷於該支持體中之鍍金層之表面對5處塗佈直徑0.8 mm形狀之銅焊膏。於支持體之中央，作為晶粒而載置5 mm見方、厚度0.5 mm之鎳板。於晶粒之下表面形成有厚度1 μm之鍍金層。於氮環境下，以260℃進行焙燒10分鐘，而獲得目標接合構造。使用具備能量分散型X射線分析裝置之掃描穿透式電子顯微鏡(日本電子股份有限公司製造)對所獲得之接合構造中之燒結體與支持體之接合界面附近之深度方向的元素分佈進行測定。將其結果示於圖5。如該圖所明瞭，判斷以跨及支持體與燒結體之接合界面之方式形成有包含含有Cu3 Au之部位及含有Au及Cu之部位之相互擴散部位。根據電子繞射之結果，確認出相互擴散部位包含Cu3 Au之合金、及於Cu中固溶有Au之固溶部位。又，根據圖5判斷：於固溶部位中，銅之比率自燒結體側朝向支持體側遞減，且金係自燒結體側朝向支持體側遞增。於固溶部位中，Au之莫耳數相對於Cu1莫耳為0.01莫耳～0.33莫耳之範圍。 [比較例4] (1)銅焊膏之製造 與比較例1(1)同樣地製備銅焊膏。 (2)晶粒黏晶接合構造之製造 與實施例2之(2)同樣地形成接合構造。所獲得之接合構造不具有僅維持晶粒與燒結體與支持體之接合之機械強度，無法進行所獲得之接合構造之散熱性之評估及接合構造中之燒結體與支持體之接合界面附近之深度方向之元素分佈的測定。 [比較例5] (1)銅焊膏之製造 與比較例2之(1)同樣地製備銅焊膏。 (2)晶粒黏晶接合構造之製造 與實施例2之(2)同樣地形成接合構造。使用具備能量分散型X射線分析裝置之掃描穿透式電子顯微鏡(日本電子股份有限公司製造)對所獲得之接合構造中之燒結體與支持體之接合界面附近之深度方向的元素分佈進行測定，結果未觀察到如跨及支持體與燒結體之接合界面般之包含含有Cu3 Au之部位之相互擴散部位。 [比較例6] (1)焊錫膏之準備 與比較例3之(1)同樣地準備不使用銅粉之焊錫膏。 (2)晶粒黏晶接合構造之製造 使用於10 mm見方、厚度0.5 mm之包含鎳之母材之表面形成有厚度1 μm之鍍金層之支持體。藉由使用厚度50 μm之樹脂膜版之網版印刷於該支持體中之鍍金層之表面對5處塗佈直徑0.8 mm形狀之焊錫膏。於支持體之中央，作為晶粒而載置5 mm見方、厚度0.5 mm之鎳板。於晶粒之下表面形成有厚度1 μm之鍍金層。於氮環境下，以200℃進行焙燒10分鐘，而獲得接合構造。 [評估] 按照以下之方法對實施例及比較例中所獲得之晶粒黏晶接合構造評估其散熱性。將與圖1所示之構造之晶粒黏晶接合構造相關之實施例及比較例之結果示於以下之表1。將與圖3所示之構造之晶粒黏晶接合構造相關之實施例及比較例之結果示於以下之表2。 [散熱性之評估方法] 對接合構造之支持體之背面，即未載置晶粒之面利用碳噴霧器(carbon spray)之塗佈實施黑化處理，然後，使用真空理工股份有限公司製造之熱常數測定裝置即TC-7000對該面照射3 kV之脈衝雷射光，藉由熱電偶對所獲得之晶粒之表面溫度的時間變化進行測定。根據測定結果，算出溫度上升了溫度上升量ΔT之1/2所需之時間t(1/2) ，作為評估散熱性之指標。此處，為了方便試驗，而對自支持體經由接合部位至晶粒側之散熱性進行評估，但加熱之方向於本發明之評估中並非為本質。溫度上升量ΔT相當於雷射照射後之溫度最大值與雷射照射前之溫度的差。t(1/2) 越小，表示入射至支持體之背面之熱越迅速地傳遞至晶粒之表面，表示具有良好之散熱性。 [表1] [表2] 如表1及表2示出之結果所明瞭，判斷各實施例中所獲得之接合構造與比較例之接合構造相比，散熱性較高。 [實施例3] 於本實施例中，製造圖1所示之構造之包含鎳之晶粒黏晶接合構造。 (1)鎳焊膏之製造 使用三井金屬礦業公司製造之NN-20作為鎳粉。該鎳粉之一級粒子之平均粒徑D為20 nm。利用三輥研磨機將該鎳粉85份、三乙醇胺(關東化學公司製造)15份混練而獲得鎳焊膏。 (2)晶粒黏晶接合構造之製造 藉由使用厚度50 μm之金屬遮罩之網版印刷於15 mm見方、厚度0.1 mm之包含鎳板(純度99.98%)之支持體塗佈10 mm見方形狀之鎳焊膏。於支持體之中央，作為晶粒而載置10 mm見方、厚度0.1 mm之鎳板(純度99.98%)。於大氣中，以5℃/min升溫至300℃，並保持30分鐘而獲得目標接合構造。將所獲得之接合構造中之燒結體與支持體之接合界面附近之TEM像示於圖7。如該圖所明瞭，判斷出以跨及支持體與燒結體之接合界面之方式形成有支持體之鎳與燒結體之鎳之相互擴散部位，且於該相互擴散部位以跨及接合界面之方式形成有結晶方位為相同方向之鎳之結晶構造。 [實施例4] 於本實施例中，製造圖1所示之構造之包含銀之晶粒黏晶接合構造。 (1)銀焊膏之製造 使用神岡礦業股份有限公司製造之SPQ-05S作為銀粉。該銀粉之微晶徑為21 nm，平均粒徑D為1.05 μm，比表面積為1.00 m2 /g。利用三輥研磨機將該銀粉99份、乙基纖維素(日進化成股份有限公司製造之ETHOCEL STD100)1份、及松油醇17份(日本萜烯化學股份有限公司製造)混練而獲得銀焊膏。 (2)晶粒黏晶接合構造之製造 藉由使用厚度50 μm之金屬遮罩之網版印刷於15 mm見方、厚度0.1 mm之包含銀板(純度99.98%)之支持體塗佈10 mm見方形狀之銀焊膏。於支持體之中央，作為晶粒而載置10 mm見方、厚度0.1 mm之銀板(純度99.98%)。於大氣中，以5℃/min升溫至300℃，並保持30分鐘而獲得目標接合構造。將所獲得之接合構造中之燒結體與支持體之接合界面附近之TEM像示於圖8。如該圖所明瞭，判斷出以跨及支持體與燒結體之接合界面之方式形成有支持體之銀與燒結體之銀之相互擴散部位，且於該相互擴散部位以跨及接合界面之方式形成有結晶方位為相同方向之銀之結晶構造。 [產業上之可利用性] 根據本發明之黏晶接合構造，自以半導體元件之晶粒為代表之各種發熱體產生之熱有效率地傳導至支持體。即，本發明之黏晶接合構造係散熱性較高者。因此，本發明之黏晶接合構造於轉換器或反相器等電力轉換器中，作為用於其電力控制之功率裝置之接合構造尤為有用。
1‧‧‧晶粒黏晶接合構造
10‧‧‧半導體元件之晶粒
10a‧‧‧表面層
20‧‧‧支持體
20a‧‧‧母材
20b‧‧‧金單質
30‧‧‧接合部位
31‧‧‧銅粒子
31a‧‧‧一級粒子
32‧‧‧燒結體
40‧‧‧接合界面
41‧‧‧相互擴散部位
41a‧‧‧相互擴散部位
41b‧‧‧相互擴散部位
41c‧‧‧Cu3Au部位
41d‧‧‧固溶部位
43‧‧‧接合界面
44‧‧‧相互擴散部位
44c‧‧‧Cu3Au部位
44d‧‧‧固溶部位
R‧‧‧區域
X‧‧‧縱截面方向
Y‧‧‧平面方向
圖1係表示作為本發明之黏晶接合構造之一實施形態之晶粒黏晶接合構造之縱截面的模式圖。 圖2係將圖1中之主要部分放大而表示之模式圖。 圖3係表示作為本發明之黏晶接合構造之另一實施形態之晶粒黏晶接合構造之縱截面的模式圖(相當於圖1之圖)。 圖4(a)係實施例1中所獲得之晶粒黏晶接合構造中之接合界面附近之穿透式電子顯微鏡像，圖4(b)係圖4(a)中之相互擴散部位之放大像，圖4(c)係將圖4(b)進一步放大之像。 圖5係表示實施例2中所獲得之晶粒黏晶接合構造中之接合界面附近之元素分佈的圖。 圖6係表示用以評估實施例及比較例中所獲得之晶粒黏晶接合構造之散熱性之裝置的模式圖。 圖7(a)～(c)係實施例3中所獲得之晶粒黏晶接合構造中之接合界面附近之穿透式電子顯微鏡像。 圖8(a)～(c)係實施例4中所獲得之晶粒黏晶接合構造中之接合界面附近之穿透式電子顯微鏡像。
1‧‧‧晶粒黏晶接合構造
10‧‧‧半導體元件之晶粒
20‧‧‧支持體
30‧‧‧接合部位
31‧‧‧銅粒子
32‧‧‧燒結體
40‧‧‧接合界面
41‧‧‧相互擴散部位
41a‧‧‧相互擴散部位
41b‧‧‧相互擴散部位
R‧‧‧區域
X‧‧‧縱截面方向
Y‧‧‧平面方向

Claims (10)

  1. 一種黏晶接合構造，其係經由包含銅粉之燒結體之接合部位將發熱體與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在銅或金， 以跨及上述支持體與上述燒結體之接合界面之方式，形成有該支持體之銅或金與該燒結體之銅的相互擴散部位。
  2. 如請求項1之黏晶接合構造，其係經由包含銅粉之燒結體之接合部位將作為上述發熱體之半導體元件之晶粒與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在銅或金， 以跨及上述支持體與上述燒結體之接合界面之方式，形成有該支持體之銅或金與該燒結體之銅的相互擴散部位。
  3. 如請求項2之黏晶接合構造，其中 於上述支持體之最表面存在銅， 於上述相互擴散部位以跨及上述接合界面之方式形成有結晶方位為相同方向之銅之結晶構造。
  4. 如請求項3之黏晶接合構造，其中結晶方位為相同方向之銅之上述結晶構造之上述接合界面中的橫斷長為10 nm以上。
  5. 如請求項2之黏晶接合構造，其中於上述支持體之最表面存在金，且上述相互擴散部位包含Cu3 Au。
  6. 如請求項5之黏晶接合構造，其中上述相互擴散部位包含Cu3 Au、及金與銅之固溶體。
  7. 如請求項2至5中任一項之黏晶接合構造，其中 於上述晶粒之下表面形成有金之層， 以跨及上述晶粒與上述燒結體之接合界面之方式，形成有金與該燒結體之銅的相互擴散部位，且 上述相互擴散部位包含Cu3 Au。
  8. 如請求項7之黏晶接合構造，其中上述相互擴散部位包含Cu3 Au、及金與銅之固溶體。
  9. 一種黏晶接合構造，其係經由包含鎳粉之燒結體之接合部位將發熱體與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在鎳， 以跨及上述支持體與上述燒結體之接合界面之方式，形成有該支持體之鎳與該燒結體之鎳的相互擴散部位。
  10. 一種黏晶接合構造，其係經由包含銀粉之燒結體之接合部位將發熱體與金屬之支持體接合而成者，且 上述支持體至少於其最表面存在銀， 以跨及上述支持體與上述燒結體之接合界面之方式，形成有該支持體之銀與該燒結體之銀的相互擴散部位。
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