CN114829042A - 银膏及其制造方法以及接合体的制造方法 - Google Patents
银膏及其制造方法以及接合体的制造方法 Download PDFInfo
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- CN114829042A CN114829042A CN202080086817.9A CN202080086817A CN114829042A CN 114829042 A CN114829042 A CN 114829042A CN 202080086817 A CN202080086817 A CN 202080086817A CN 114829042 A CN114829042 A CN 114829042A
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- silver
- silver paste
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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Abstract
银膏是为了直接涂布于铜或铜合金部件的表面(11a)以形成银膏层(13)而使用,并且包含银粉末(12)和粘合剂(14)。粘合剂(14)至少包含脂肪酸银及脂肪族胺,粘合剂(14)的交换电流密度在10μA/dm2以上且1000μA/dm2以下的范围内。粘合剂(14)优选包含二乙二醇、三乙二醇、聚乙二醇或苯甲酸中的任一种或两种以上作为添加剂。粘合剂(14)中的添加剂的含有比例以质量比(添加剂/粘合剂)计优选在0.003以上且0.333以下的范围内。
Description
技术领域
本发明涉及一种用于接合电子部件的银膏、制造该银膏的方法及使用该银膏制造接合体的方法。
本申请主张基于2019年12月19日于日本申请的专利申请2019-228845号及2020年12月9日于日本申请的专利申请2020-204335号的优先权,并将其内容援用于此。
背景技术
以往,为了使用银膏来将如高输出功率LED元件或功率半导体元件等半导体元件、半导体封装件那样的电子部件粘接并固定(芯片接合)于DBC(Direct Bonded Copper:直接敷铜)基板(覆铜基板)或引线框架等铜或铜合金部件的表面,使用包含银粉末、热固性树脂及溶剂的银膏。
作为这种银膏,例如公开了包含银粉、银微粒、脂肪酸银、胺及银树脂酸盐的导热性组合物(例如,参考专利文献1)。在该导热性组合物中,银粉的平均粒径为0.3μm~100μm,银微粒的一次粒子的平均粒径为50~150nm,银微粒的微晶粒径为20~50nm,且平均粒径与微晶粒径之比为1~7.5。为了调整粘度等,该导热性组合物进一步含有甲醇、乙二醇、丙二醇等醇类溶剂。专利文献1中记载了利用如此构成的导热性组合物能够获得具有高导热率的导热体。
另外,作为其他银膏,公开了导电性膏(例如,参考专利文献2),该导电性膏包含平均粒径为1~200nm的银微粒、及包含橡皮布(blanket)溶胀率为2.0%以下的低溶胀性有机溶剂的有机溶剂,且低溶胀性有机溶剂的含有率为3.0~30wt%。专利文献2中记载了如下内容:在该导电性膏中,优选在银微粒的表面的至少一部分附着有有机成分,从银微粒的分散性及导电性等的观点考虑,该有机成分优选包含胺及羧酸。并且,专利文献2中记载了作为橡皮布溶胀率为2.0%以下的低溶胀性有机溶剂,优选具有作为官能团的羟基的溶剂,例如能够举出具有多个羟基的多元醇或其他一元醇溶剂等,并且记载了作为具有2~3个羟基的多元醇,能够举出甘油、1,2,4-丁三醇、1,2,6-己三醇、乙二醇、二乙二醇、1,2-丁二醇、丙二醇、2-甲基戊烷-2,4-二醇等。专利文献2中记载了该导电性膏能够形成具有充分的导电性及与基板的良好的密接性的微细导电性图案。
专利文献1:专利第5872545号公报(参考权利要求1、说明书第[0006]段、第[0051]段)
专利文献2:专利第6329703号公报(权利要求1、说明书第[0010]段、第[0034]段、第[0035]段、第[0052]段、第[0055]段、第[0056]段)
在涂布银膏的DBC基板(覆铜基板)或引线框架等铜或铜合金部件的表面容易形成CuO、CuO2的氧化皮膜。因此,在铜或铜合金部件的表面形成镀银或镀镍等金属化层,在其上涂布银膏,从而接合芯片元件等电子部件。然而,在不形成金属化层,而是使用专利文献1及2所示的银膏,将芯片元件等电子部件接合于铜或铜合金部件的情况下,难以以高强度将电子部件接合于铜或铜合金部件。
并且,从抑制在铜或铜合金部件的表面形成上述氧化皮膜的观点考虑,期望将电子部件接合于铜或铜合金部件时的加热气氛为低氧浓度的氮气氛。然而,若使用专利文献1及2所述的银膏,在低氧浓度的氮气氛下进行接合电子部件时的加热,则存在银膏中的银成分的烧结性下降且接合强度变低的课题。
发明内容
本发明的目的在于,提供一种银膏及其制造方法以及接合体的制造方法,其在不具有镀银或镀镍等金属化层的铜或铜合金部件的表面直接涂布银膏,且在低氧浓度的氮气氛下进行加热时,以高强度将电子部件接合于铜或铜合金部件。
本发明的第一方式为一种银膏,包含银粉末、粘合剂及溶剂,该银膏的特征在于,所述粘合剂至少包含脂肪酸银及脂肪族胺,所述粘合剂的交换电流密度在10μA/dm2以上且1000μA/dm2以下的范围内。更优选地,所述交换电流密度在20μA/dm2以上且500μA/dm2以下的范围内,并且也可以在100μA/dm2以上且300μA/dm2以下的范围内。本说明书中的粘合剂的交换电流密度是指在粘合剂中配置了工作电极Cu、对电极Ag及参比电极Pt的状态下,通过线性扫描伏安法(LSV法/电位扫描法),以开路电位为基准使电极电位从+250mV变为-250mV而测定的交换电流密度,测定条件将在后面叙述。
本发明的第二方式所涉及的银膏为基于第一方式的发明,所述粘合剂包含二乙二醇、三乙二醇、聚乙二醇或苯甲酸中的任一种或两种以上作为添加剂。
本发明的第三方式所涉及的银膏为基于第一或第二方式的发明,所述粘合剂中的所述添加剂的含有比例以质量比(添加剂/粘合剂)计在0.003以上且0.333以下的范围内。所述含有比例更优选为0.020以上且0.200以下。
本发明的第四方式所涉及的银膏为基于第一至第三方式中的任一方式的发明,所述银粉末在55体积%以上且95体积%以下的范围内包含粒径在100nm以上且小于500nm的第一银粒子,在5体积%以上且40体积%以下的范围内包含粒径在50nm以上且小于100nm的第二银粒子,并且在5体积%以下的范围内包含粒径小于50nm的第三银粒子。
本发明的第五方式所涉及的银膏的制造方法包括如下工序:混合脂肪酸银和脂肪族胺而获得混合物;将所述混合物加热并搅拌之后冷却而获得混合溶液;及将所述混合溶液、银粉末及第二或第三方式的添加剂进行混炼而获得银膏。
本发明的第六方式所涉及的接合体的制造方法包括如下工序:在铜或铜合金部件的表面直接涂布第一至第四方式中任一方式的银膏以形成银膏层;在所述银膏层上层叠电子部件来制作层叠体;及通过在氧浓度以体积基准计为1000ppm以下的氮气氛下对所述层叠体进行加热,使所述银膏层中的银粉末烧结以形成接合层,并且制作所述铜或铜合金部件与所述电子部件经由接合层接合的接合体。更优选地,所述氧浓度以体积基准计为700ppm以下,也可以为500ppm以下,还可以为100ppm以下。氧浓度的下限值并无限制,可以为0.1ppm。
本发明的第一方式的银膏为银粉末、及至少包含脂肪酸银和脂肪族胺的粘合剂,其中,该粘合剂的交换电流密度在10μA/dm2以上且1000μA/dm2以下的范围内。在该银膏中,脂肪酸银的至少一部分与脂肪族胺的至少一部分反应而形成络合物。加热银膏时,从该络合物析出银纳米粒子。
在以往的银膏中,银纳米粒子从加热时的络合物快速析出,所析出的银纳米粒子介于银膏中的银粉末之间,如图2的(a)、图2的(b)所示,在不具有金属化层的铜或铜合金部件1的表面1a层叠银粉末2而形成银膏层3。在图2中,符号4为粘合剂。
在本发明的各方式中,由于粘合剂的交换电流密度在上述范围内,因此银纳米粒子从加热银膏时的络合物的析出延迟,所析出的银纳米粒子介于银膏中的银粉末之间,并且如图1的(a)、图1的(b)所示,在铜或铜合金部件11的表面11a进行颗粒生长的同时聚集,进行颗粒生长的银纳米粒子的层形成为镀银伪膜15。在图1中,符号12为银粉末,符号13为银膏层,符号14为粘合剂。
在本发明的各方式中,通过之后的加热,银膏层中的银粉末经由镀银伪膜15烧结,从而银膏层成为接合层(未图示)。由于镀银伪膜15的存在,因此即使在低氧浓度的氮气氛下进行加热,与以往的不具有镀银伪膜的情况相比,电子部件经由该接合层也会以更高的强度接合于不具有金属化层的铜或铜合金部件的表面。
本发明的第二方式的银膏中,粘合剂包含二乙二醇、三乙二醇、聚乙二醇或苯甲酸中的任一种或两种以上作为添加剂。该添加剂削弱加热银膏时的络合物的还原力。其结果,银纳米粒子从络合物的析出延迟,从而能够在铜或铜合金部件的表面形成镀银伪膜。
本发明的第三方式的银膏中,粘合剂中的添加剂的含有比例以质量比(添加剂/粘合剂)计在0.003以上且0.333以下的范围内。粘合剂以所述质量比计包含添加剂时,粘合剂的交换电流密度容易控制在10μA/dm2以上且1000μA/dm2以下的范围内,由此,银纳米粒子从加热银膏时的络合物的析出延迟,从而能够更可靠地在铜或铜合金部件的表面形成镀银伪膜。
在本发明的第四方式的银膏中,银粉末在55体积%以上且95体积%以下的范围内包含粒径在100nm以上且小于500nm的第一银粒子,在5体积%以上且40体积%以下的范围内包含粒径在50nm以上且小于100nm的第二银粒子,并且在5体积%以下的范围内包含粒径小于50nm的第三银粒子,因此所述银粉末具有比较宽的粒度分布,由此在进行烧结时,通过使第一~第三银粒子彼此的间隙变小且致密,能够制作空隙少的接合层。
本发明的第五方式的银膏的制造方法中,在制备混合溶液之后,将添加剂与混合溶液一同混合于银粉末中,因此具有防止添加剂阻碍脂肪酸银与脂肪族胺的反应的效果。并且,在混合液体中,脂肪酸银的至少一部分与脂肪族胺的至少一部分反应而形成络合物。加热银膏时,通过添加剂,银纳米粒子从加热银膏时的络合物的析出延迟,其结果,能够在铜或铜合金部件的表面形成镀银伪膜。
本发明的第六方式的接合体的制造方法中,首先,在铜或铜合金部件的表面直接涂布第一至第四方式中任一方式的银膏以形成银膏层。在此,“在铜或铜合金部件的表面直接涂布”是指,将银膏涂布于在铜或铜合金部件的表面未形成银、镍、金等金属化层的铜或铜合金部件的表面。接下来,经由银膏层在铜或铜合金部件上层叠电子部件来制作层叠体,并对该层叠体进行加热。加热银膏时,从络合物析出银纳米粒子。通过添加剂,银纳米粒子从加热银膏时的络合物的析出延迟,其结果,在铜或铜合金部件的表面形成镀银伪膜。通过进一步继续加热,经由镀银伪膜,使银粉末烧结以形成接合层。因此,即使是加热时的氧浓度以体积基准计为1000ppm以下的氮气氛,并且是不具有金属化层的铜或铜合金部件,电子部件也能够经由该接合层以高强度直接接合于该铜或铜合金部件的表面。通过将加热时的氧浓度以体积基准计设为1000ppm以下的氮气氛,防止加热时的铜或铜合金部件的氧化,且以更高的强度接合电子部件。
附图说明
图1的(a)是将本发明所涉及的银膏涂布于不具有金属化层的铜或铜合金部件的表面的状态的示意图。图1的(b)是对该所涂布的银膏及铜或铜合金部件进行加热后的状态的示意图。
图2的(a)是将以往的银膏涂布于不具有金属化层的铜或铜合金部件的表面的状态的示意图。图2的(b)是对该所涂布的银膏及铜或铜合金部件进行加热后的状态的示意图。
具体实施方式
接着,对用于实施本发明的方式进行说明。银膏包含银粉末及粘合剂,粘合剂至少包含脂肪酸银及银脂肪族胺。银膏可以进一步包含溶剂。以下,对各成分进行详细说明。
〔银粉末〕
本实施方式的银粉末并无特别限定,能够使用市售的银粉末。优选地,包含粒径相互不同的第一银粒子(第一组银粒子)、第二银粒子(第二组银粒子)及第三银粒子(第三组银粒子)。这些第一~第三银粒子均作为一次粒子相互凝聚以形成凝聚体(银粉末)。第一银粒子的粒径优选为100nm以上且小于500nm,将第一~第三银粒子的总量设为100体积%时,优选在55体积%以上且95体积%以下的范围内包含第一银粒子。并且,第二银粒子的粒径优选为50nm以上且小于100nm,将第一~第三银粒子的总量设为100体积%时,优选在5体积%以上且40体积%以下的范围内包含第二银粒子。此外,第三银粒子的粒径优选为小于50nm,将第一~第三银粒子的总量设为100体积%时,优选在5体积%以下的范围内包含第三银粒子。另外,此处的“体积”表示银粒子本身的体积。
将第一~第三银粒子的含有比例分别限定在前述范围内的原因在于,通过具有比较宽的粒度分布,由此当烧结时,成为第一~第三银粒子彼此的间隙小且致密的凝聚体,从而容易制出空隙较少的接合层。另外,第一~第三银粒子中的银的纯度优选为90质量%以上,更优选为99质量%以上。其原因在于,由于第一~第三银粒子的纯度较高时容易熔融,因此能够在比较低的温度烧结第一~第三银粒子。作为第一~第三银粒子中的除了银之外的元素,也可以包含Au、Cu、Pd等。
并且,将第一~第三银粒子的总量设为100体积%时,优选在70体积%以上且90体积%以下的范围内包含粒径为100nm以上且小于500nm的第一银粒子,优选在10体积%以上且30体积%以下的范围内包含粒径为50nm以上且小于100nm的第二银粒子,优选在1体积%以下的范围内包含粒径小于50nm的第三银粒子。由于第一~第三银粒子的粒度分布在前述范围内,因此当烧结时,能够形成第一~第三银粒子彼此的间隙小且致密的银粉末的凝聚体的效果会提高,从而容易制作空隙更少的接合层。另外,第一~第三银粒子的粒径例如能够通过如下方法而获得:使用SEM(Scanning Electron Microscope:扫描式显微镜照片),测定所述银粉末中的第一~第三银粒子的投影面积,由所获得的投影面积计算出圆当量直径(具有与第一~第三银粒子的投影面积相同的面积的圆的直径),并将该所计算出的粒径换算为体积基准的粒径。关于具体的测定方法的例子,将在后述的实施例中说明。
所述银粉末优选包含由有机还原剂或其分解物构成的有机物,该有机物优选在150℃的温度分解或挥发。并且,作为有机还原剂的例子,可以举出抗坏血酸、甲酸、酒石酸等。以第一~第三银粒子凝聚而成的二次粒子(即制作银膏之前的银粉末)的状态保存时,由有机还原剂或其分解物构成的有机物容易抑制第一~第三银粒子的表面的氧化,并且抑制第一~第三银粒子的相互扩散即保存时的扩散接合。并且,所述有机物具有如下效果:在将包含银粒子的凝聚体的银膏印刷到接合对象部件的被接合面并加热时,所述有机物容易分解或挥发,露出第一~第三银粒子的高活性的表面,由此使第一~第三银粒子彼此的烧结反应容易进行。此外,所述有机物的分解物或挥发物具有使接合对象部件的被接合面的氧化膜还原的还原能力。
另外,若银粉末中所含的有机物残留在接合层,则有可能随时间的经过会分解而在接合层产生空隙。因此,关于有机物的含有比例,将第一~第三银粒子的总量设为100质量%时,优选设为2质量%以下。更优选地,所述有机物的含有比例为1.5质量%以下,也可以为0.7质量%以下。但是,为了获得有机物的前述效果,关于有机物的含有比例,将第一~第三银粒子的总量设为100质量%时,优选为0.05质量%以上。进一步优选地,所述有机物的含有比例也可以为0.1质量%以上。
〔粘合剂〕
本实施方式的粘合剂包含脂肪酸银及银脂肪族胺。本实施方式中的粘合剂的交换电流密度在10μA/dm2以上且1000μA/dm2以下的范围内。由此,加热银膏时,银纳米粒子从络合物的析出延迟,从而容易在铜或铜合金部件的表面形成镀银伪膜。在粘合剂的交换电流密度小于10μA/dm2的情况下,银纳米粒子从加热银膏时的络合物的析出过度延迟,难以在铜或铜合金部件的表面形成镀银伪膜,从而接合体的接合强度下降。在粘合剂的交换电流密度超过1000μA/dm2的情况下,银纳米粒子从加热银膏时的络合物快速析出,优先进行银的核生成,因此难以在铜或铜合金部件的表面形成镀银伪膜,从而接合体的接合强度下降。为了使粘合剂在上述规定的交换电流密度的范围内,最好粘合剂包含添加剂。通过选定后述的银膏中包含的脂肪族胺或溶剂的种类,以代替粘合剂包含添加剂,从而能够控制在上述规定的交换电流密度的范围内。关于粘合剂的交换电流密度的测定方法将在后面叙述。更优选地,所述交换电流密度也可以为20μA/dm2以上且500μA/dm2以下,还可以为100μA/dm2以上且300μA/dm2以下。
〔脂肪酸银〕
作为本实施方式的脂肪酸银,可以举出乙酸银、草酸银、丙酸银、肉豆蔻酸银、丁酸银等。
〔脂肪族胺〕
作为本实施方式的脂肪族胺,可以举出伯胺、仲胺、叔胺等。最好脂肪族胺的碳原子数优选设为8~12。上述碳原子数过少时,存在脂肪族胺的沸点较低的倾向,因此有可能降低银膏的印刷性。上述碳原子数过多时,阻碍银膏中的银粒子的烧结,有可能无法获得具有充分的强度的接合体。作为具体例,伯胺有乙基己胺、氨基癸烷、十二胺、壬胺、己胺、辛胺等,仲胺有二甲胺、二乙胺、二辛胺等,叔胺有三甲胺、三乙胺等。所述碳原子数也可以为10~12。
在银膏中,脂肪族胺与脂肪酸银的摩尔比即脂肪族胺的摩尔量/脂肪酸银的摩尔量优选在1.5以上且3以下的范围内。若脂肪族胺的比例较少,则由于作为固体的脂肪酸银的比例相对变高,因此有可能难以在银膏中均匀分散,在加热而获得的接合层的内部容易产生空隙。若脂肪族胺的比例过多,则由于过量的脂肪族胺容易导致银膏中的银粉末的颗粒生长,且膏粘度容易降低,因此有可能导致印刷性变差。脂肪族胺的摩尔量/脂肪酸银的摩尔量进一步优选在1.7以上且2.8以下的范围内,进一步更优选在2.0以上且2.5以下的范围内。
银膏包含脂肪酸银及脂肪族胺,因此该脂肪酸银的至少一部分与脂肪族胺的至少一部分反应而形成络合物。该络合物被推断为银胺络合物。
〔添加剂〕
本实施方式的粘合剂也可以进一步包含添加剂。作为添加剂,可以举出二乙二醇、三乙二醇、聚乙二醇或苯甲酸中的任一种或两种以上。如上所述,粘合剂包含添加剂,由此粘合剂的交换电流密度容易控制在10μA/dm2以上且1000μA/dm2以下的范围内。然而,通过选定银膏中包含的脂肪族胺或下面叙述的溶剂的种类,成为上述规定的交换电流密度的范围,因此在该情况下,不一定需要添加剂。在粘合剂包含添加剂的情况下,优选粘合剂中的添加剂的含有比例以质量比(添加剂/粘合剂)计为0.003以上且0.333以下,优选在0.020以上且0.200以下的范围内。
〔溶剂〕
银膏也可以进一步包含溶剂。作为溶剂,可以举出醇类溶剂、水、乙酸酯类溶剂、烃类溶剂及它们的混合物等。醇类溶剂包括α-萜品醇、异丙醇、乙基己二醇、1-己醇、1-辛醇及它们的混合物等,乙酸酯类溶剂包括丁基卡必醇乙酸酯等,作为烃类溶剂有癸烷、十二烷、十四烷及它们的混合物等。关于溶剂的含量,将银膏整体设为100质量%时,优选在0质量%以上且30质量%以下的范围内。即使所述溶剂的含量为0质量%,银膏中的脂肪族胺和/或添加剂也发挥作为溶剂的作用,因此并无问题。若超过30质量%,则粘度过低,从而涂布时的形状保持性容易变差。所述溶剂的进一步优选含量在0质量%以上且10质量%以下的范围内。
〔树脂〕
银膏可以进一步包含树脂。作为树脂,可以举出环氧类树脂、硅酮类树脂、丙烯酸类树脂及它们的混合物等。作为环氧类树脂,有双酚A型环氧树脂、酚醛清漆型环氧树脂、环状脂肪族型环氧树脂及它们的混合物等,作为硅酮类树脂,有甲基硅酮树脂、环氧改性硅酮树脂、聚酯改性硅酮树脂及它们的混合物等,作为丙烯酸类树脂,有丙烯酸酯类单体树脂等。这些树脂通过银膏的加热而固化,其固化体填充于银粉末的烧结体的空隙。通过热固性树脂组合物的固化体填充于银粉末的烧结体的空隙,接合层的机械强度得到提高,从而进一步抑制冷热循环负荷时的接合强度的降低。关于所述树脂的含量,将银膏整体设为100质量%时,优选在0质量%以上且3质量%以下的范围内。所述树脂的含量超过3质量%时,有可能妨碍银粉末的烧结且降低接合层的机械强度。所述树脂的进一步优选含量在0质量%以上且2.5质量%以下的范围内,进一步更优选的含量在0质量%以上且2.0质量%以下的范围内。
〔银膏的制造方法〕
对如此构成的银膏的制造方法进行说明。首先,准备脂肪酸银、脂肪族胺及溶剂,并混合脂肪酸银、脂肪族胺及溶剂以制备混合物。在此,脂肪族胺在常温下为液体的情况下,不一定要混合溶剂。将该混合物的总量设为100质量%时,优选以脂肪酸银为0.1质量%以上且40质量%以下、脂肪族胺为0.1质量%以上且60质量%以下、溶剂为80质量%以下的比例混合。在此,将脂肪酸银、脂肪族胺及溶剂的混合比例限定在前述范围内是因为在混合液中不易产生沉淀等。更优选的混合比例为,将脂肪酸银、脂肪族胺及溶剂的总量设为100质量%时,脂肪酸银为20质量%以上且30质量%以下,脂肪族胺为20质量%以上且40质量%以下,溶剂为40质量%以上且60质量%以下。
接着,优选将所述混合物在30℃以上且100℃以下的范围的温度加热并搅拌5分钟以上且10小时以下的范围的时间以制备混合液。在制备后,将该混合液降至室温(25℃)来进行冷却。由此制备脂肪酸银、脂肪族胺及溶剂的混合溶液(以下,简称为混合溶液)。在此,将所述混合物的加热温度及加热时间设在前述范围内是为了容易均匀地混合脂肪酸银、脂肪族胺及溶剂。
接着,混合所述混合溶液、所述银粉末及所述添加剂之后,利用行星式行星搅拌机等进行搅拌,并进一步利用三辊磨机等进行混炼,由此获得银膏。在此,将所述银膏设为100质量%时,所述银粉末的含量优选在50质量%以上且95质量%以下的范围内。更优选地,所述银粉末的含量在70质量%以上且95质量%以下的范围内,也可以在80质量%以上且93质量%以下的范围内。在银膏中,若所述银粉末的含量较少,则有可能降低银膏的粘度而容易产生塌边等涂布不良,若所述银粉末的含量过高,则有可能增加粘度而使操作性变差。也可以先混合添加剂及混合溶液之后混合银粉末,或者,也可以将混合溶液及银粉末混合之后混合添加剂。添加剂在粘合剂中的含有比例以质量比(添加剂/粘合剂)计优选在0.003以上且0.333以下的范围内混合。所述质量比也可以在0.020以上且0.200以下的范围内。如上所述,通过选定脂肪族胺或溶剂的种类,也可以使粘合剂不包含添加剂。通过以该质量比进行混合,加热银膏时的络合物的还原力减弱,并且银纳米粒子从络合物的析出延迟,从而容易在铜或铜合金部件的表面形成镀银伪膜。并且,银膏也可以包含所述树脂。此时,冷热循环特性得到提高。并且,也可以在将混合溶液与添加剂混合之后,添加银粉末并混合而获得银膏。
另外,在该混合溶液中,脂肪族胺与脂肪酸银的摩尔比、即脂肪族胺的摩尔量/脂肪酸银的摩尔量优选设在1.5以上且3以下的范围内,进一步优选设在1.7以上且2.8以下的范围内。若使用这种混合溶液制作银膏,则混合溶液中的脂肪族胺与脂肪酸银的摩尔比成为银膏中的脂肪族胺与脂肪酸银的摩尔比。
〔接合体的制造方法〕
对使用所述银膏制造接合体的方法进行说明。
在本实施方式的制造方法中,准备不具有金属化层的铜或铜合金部件和电子部件。作为电子部件,可以举出半导体芯片、高输出功率LED元件、功率半导体元件等半导体元件、封装件等。作为铜或铜合金部件,例如可以举出DBC基板(覆铜基板)或铜合金制引线框架。然而,铜或铜合金部件并不限定于DBC基板或引线框架。接下来,在铜或铜合金部件的表面例如通过金属掩模法等直接涂布所述银膏,形成具有所期望的平面形状的银膏层。
接着,经由银膏层在铜或铜合金部件上层叠电子部件来制作层叠体。然后,在氧浓度以体积基准计为1000ppm以下、优选为700ppm以下、更优选为200ppm以下、进一步优选为100ppm以下的低氧浓度的氮气氛下,对该层叠体进行加热。例如,将层叠体在120℃以上且280℃以下的温度(加热温度)的范围内加热保持10分钟以上且240分钟以下(加热时间)。通过该加热,银纳米粒子从银膏中的脂肪酸银的至少一部分与脂肪族胺的至少一部分反应而形成的络合物析出。银膏中的添加剂削弱络合物的还原力,银纳米粒子从络合物的析出延迟,从而所析出的银纳米粒子的一部分在铜或铜合金部件的表面形成镀银伪膜。通过继续加热,银膏层中的银粉末(第一银粒子、第二银粒子及第三银粒子)与被析出的剩余的银纳米粒子及镀银伪膜一起烧结以形成接合层。由此,即使在低氧浓度的氮气氛下进行加热,也能够制作电子部件经由该接合层以高强度直接接合于表面不具有金属化层的铜或铜合金部件的接合体。在此,将所述层叠体的加热温度及加热时间限定在前述范围内是基于如下理由:低于10分钟时有可能难以进行烧结,超过240分钟时,接合特性也不会发生变化且增加成本。另外,在加热时,对所述层叠体可以不进行朝向其层叠方向的加压。这是基于省略加压工序以降低成本的理由。
实施例
接着,将本发明的实施例连同比较例一起进行详细说明。首先,对不包含银粉末的银膏前体即混合溶液1~18及混合溶液20~22进行说明,然后对使用这些混合溶液的实施例1~28及比较例1~9进行说明。
〔银膏前体(混合溶液)的制造例〕
<混合溶液1>
首先,准备乙酸银(脂肪酸银)、氨基癸烷(脂肪族胺)及丁基卡必醇乙酸酯(溶剂),将脂肪酸银、脂肪族胺及溶剂的总量设为100质量%时,以乙酸银(脂肪酸银)22质量%、氨基癸烷(脂肪族胺)41.3质量%、丁基卡必醇乙酸酯(溶剂)36.7质量%的比例称取,并将它们与搅拌器的搅拌棒一同放入玻璃制容器内。然后,在加热到50℃的热板上放置所述容器,以300rpm旋转搅拌器的搅拌棒的同时,搅拌1小时来制备混合液。接下来,从热板取下储存有该混合液的容器并将该混合液的温度降至室温。由此,制备了作为银膏前体的脂肪酸银-脂肪族胺混合溶液(以下,简称为混合溶液)即混合溶液1。
<混合溶液2~18及混合溶液20~22>
关于混合溶液2~18及混合溶液20~22,作为脂肪酸银、脂肪族胺及溶剂使用表1所示的种类的物质,并且以如表1所示的比例分别配制了脂肪酸银、脂肪族胺及溶剂。混合溶液18中未使用溶剂。另外,混合溶液20不包含脂肪酸银,且混合溶液21不包含脂肪族胺,因此虽然不是混合溶液,但在本说明书中为了方便起见,混合溶液20、21也称为混合溶液。并且,在表1及表2中的脂肪酸银的种类栏中,“A1”为乙酸银,“A2”为草酸银,“A3”为肉豆蔻酸银。并且,在表1及表2中的脂肪族胺的种类栏中,“B1”表示氨基癸烷,“B2”表示己胺,“B3”为辛胺,“B4”为十二胺,“B5”为二辛胺。此外,在表1及表2中的溶剂的种类栏中,“C1”为丁基卡必醇乙酸酯,“C2”为水,“C3”为α-萜品醇,“C4”为2-乙基1,3-己二醇,“C5”为1-己醇,“C6”为1-辛醇,“C7”为平均分子量为200的聚乙二醇。
[表1]
A1:乙酸银 B1:氨基癸烷 C1:丁基卡必醇乙酸酯
A2:草酸银 B2:己胺 C2:水
A3:肉豆蔻酸银 B3:辛胺 C3:α-萜品醇
B4:十二胺 C4:2-乙基-1,3-己二醇
B5:二辛胺 C5:1-己醇
C6:1-辛醇
C7:聚乙二醇(分子量200)
<比较试验1及评价>
各自分别搅拌混合溶液1~18及混合溶液20~22的同时,在130℃加热10分钟之后,在硅晶片上滴加1g的各混合溶液,并在25℃温度进行减压干燥,由此制作出干燥物附着于表面的晶片。然后,利用SEM(扫描电子显微镜)对该晶片表面进行观察,计数1000个附着于表面的粒子,利用图像处理软件(Image-J(National Institutes of Health:开发)),测定所提取的粒子(一次粒子)的投影面积,由所获得的投影面积计算出圆当量直径,并将其作为一次粒径。关于存在无法视觉辨认轮廓的部位的粒子,未测定圆当量直径。将所获得的一次粒径转换为体积基准的粒径,并将其体积基准的粒径的平均值设为干燥物的平均粒径。并且,将在所述干燥中产生银粉末的情况设为“合格”,将在干燥物中未产生银粉末或无法测定到银粉末的一次粒径的情况判定为“不合格”。将所述干燥物中的银粉末的平均粒径与判定结果示于表2。另外,表2还示出脂肪酸银的种类、脂肪族胺的种类及溶剂的种类。
[表2]
A1:乙酸银 B1:氨基癸烷 C1:丁基卡必醇乙酸酯
A2:草酸银 B2:己胺 C2:水
A3:肉豆蔻酸银 B3:辛胺 C3:α-萜品醇
B4:十二胺 C4:2-乙基-1,3-己二醇
B5:二辛胺 C5:1-己醇
C6:1-辛醇
C7:聚乙二醇(分子量200)
从表2可明显看出,由于不包含脂肪酸银的混合溶液20不包含期望有助于接合层的致密化的银,因此在进行SEM(扫描电子显微镜)观察时未看到银粉末的产生,因而判定结果为不合格。
并且,不包含脂肪族胺的混合溶液21无法获得均匀的混合溶液,且硅晶片上的干燥物成块,因此通过SEM(扫描电子显微镜)观察无法测定银粉末,因而判定结果为不合格。认为这是因为混合溶液21不含脂肪族胺,因此脂肪酸银的分解没有充分进行而未生成银粉末。
与此相对,包含脂肪酸银及脂肪族胺的混合溶液1~18及混合溶液22中,在进行SEM(扫描电子显微镜)观察时看到平均粒径50nm以上且100nm以下的银粉末的产生,因而判定结果为合格。推测这是因为混合溶液1~18及混合溶液22包含脂肪酸银及脂肪族胺,因此通过加热而迅速分解有机物,容易形成露出表面的活性高的银纳米粒子。
〔银膏的制造例〕
首先,对用作在实施例1~28及比较例1~9中制备的银膏的原料的银粉末的制备方法进行说明。这10种银粉末在以下的表3中由“No.1~No.10”表示。表3中还示出10种银粉末中的有机物含量。
[表3]
以如下方式制备出表3所示的No.1银粉末(第一~第三银粒子的混合物/凝聚体)。首先,准备了D10、D50及D90分别为20nm、50nm及100nm的银微粒(原料粉A)以及D10、D50及D90分别为150nm、300nm及500nm的银微粒(原料粉B)。关于银微粒(原料粉A)和银微粒(原料粉B)的制备方法将在后面叙述。D10为混合物中的其粒径以下的粒子的比率为10%的值,D50为混合物中的其粒径以下的粒子的比率为50%的值,D90为混合物中的其粒径以下的粒子的比率为90%的值。由银微粒的粒度分布曲线求出各银微粒的D10、D50及D90。通过后述的动态光散射法测定银微粒的粒度分布曲线。关于No.1银粉末,以质量比计按1:3的比例混合原料粉A及原料粉B以获得了银微粒混合物。
在利用动态光散射法的测定中,首先,在20g离子交换水中投入0.1g银微粒,并照射5分钟25kHz超声波,使银粒子分散于离子交换水。接着,向动态光散射式粒度分布测定装置(HORIBA,Ltd:LB-550)用观察池注入所获得的银微粒分散液,并根据该装置的步骤测定了粒度分布。
接下来,以质量比计为成为10:1:89的比例混合该银微粒混合物、抗坏血酸钠(有机还原剂)及水而制备了银微粒浆料。在90℃温度将该银微粒浆料加热3小时对银微粒进行了还原处理。接着,将银微粒浆料冷却至室温之后,利用离心分离器分离固体物并进行了回收。将该所回收的固体物(含水银微粒凝聚体)水洗多次并干燥,从而获得表3所示的No.1银粉末(第一~第三银粒子的混合物/凝聚体)。
除了将银微粒(原料粉A)与银微粒(原料粉B)的混合比例以质量比计设为1:1以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.2银粉末。
除了将银微粒(原料粉A)与银微粒(原料粉B)的混合比例以质量比计设为1:5以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.3银粉末。
利用以下方法获得No.4银粉末。向保持在50℃的1200g离子交换水中,经5分钟同时滴加保持在50℃的900g硝酸银水溶液及保持在50℃的600g柠檬酸钠水溶液,从而制备了柠檬酸银浆料。另外,向离子交换水中同时滴加硝酸银水溶液及柠檬酸钠水溶液的期间,持续搅拌离子交换水。并且,硝酸银水溶液中的硝酸银的浓度为66质量%,柠檬酸钠水溶液中的柠檬酸的浓度为56质量%。接下来,向保持在50℃的柠檬酸银浆料中,经30分钟滴加保持在50℃的300g甲酸钠水溶液而获得混合浆料。该甲酸钠水溶液中的甲酸的浓度为58质量%。接着,对所述混合浆料进行了规定的热处理。具体而言,以升温速度10℃/小时将所述混合浆料升温至最高温度60℃,在60℃(最高温度)保持30分钟之后,经60分钟将温度降低至20℃。由此获得了银粉末浆料。将所述银粉末浆料放入离心分离机并以1000rpm的转速旋转了10分钟。由此除去银粉末浆料中的液体层,获得进行了脱水及脱盐的银粉末浆料。通过冷冻干燥法对该被脱水及脱盐的银粉末浆料进行30小时干燥,由此获得了具有表3所示的体积基准的粒径的粒度分布的No.4银粉末。
除了将银微粒(原料粉A)与银微粒(原料粉B)的混合比例以质量比计设为2:1以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.5银粉末。
除了将银微粒(原料粉A)与银微粒(原料粉B)的混合比例以质量比计设为1:6以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.6银粉末。
除了将银微粒(原料粉A)与银微粒(原料粉B)的混合比例以质量比计设为2:9以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.7银粉末。
除了仅使用银微粒(原料粉A)而不混合银微粒(原料粉A)与银微粒(原料粉B)以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.8银粉末。
除了将银微粒(原料粉A)与银微粒(原料粉B)的混合比例以质量比计设为4:3以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.9银粉末。
除了将银微粒(原料粉A)与银微粒(原料粉B)的混合比例以质量比计设为1:9以外,以与上述的No.1银粉末的制备方法同样的方式,获得了No.10银粉末。
另外,上述银微粒(原料粉A)的制造方法如下。首先,以与硝酸银中的银离子成为等摩尔比(1:1:1)的方式在蒸馏水中混合硝酸银、柠檬酸及氢氧化钾来制作了悬浮液。以银离子与乙酸肼的摩尔比为1:2的方式向该悬浮液加入乙酸肼。能够通过使已加入乙酸肼的悬浮液在40℃的液温进行反应,并对所获得的反应液浆料进行清洗、回收、干燥,从而获得了银微粒(原料粉A)。
并且,通过混合硝酸银水溶液、氨水及蒸馏水而制备银浓度为22g/L的银氨水溶液,在该银氨水溶液中加入还原液,并对所生成的银粒子浆料进行清洗、回收、干燥,从而获得银微粒(原料粉B)。另外,还原液为对苯二酚水溶液与氢氧化钠水溶液的混合液,且为以氧化还原电位以Ag/AgCl基准计为-380mV的方式制备的溶液。
<银粒子的粒度分布的测定方法>
使用SEM获取由第一~第三银粒子所凝聚的500个凝聚体(二次粒子)的图像,测定了包含于各银粒子凝聚体的银粒子(一次粒子)的粒径。此时SEM的装置倍率设为100000倍。从500个银粒子凝聚体的SEM图像提取出能够视觉辨认银粒子(一次粒子)整体的轮廓的银粒子。接下来,利用图像处理软件(Image-J),测定所提取的银粒子的投影面积,由所获得的投影面积计算出圆当量直径,并将其作为银粒子的粒径。关于存在无法视觉辨认轮廓的部位的银粒子,未测定圆当量直径。将所获得的银粒子的粒径转换为体积基准的粒径,并求出该体积基准的粒径的粒度分布。将其结果示于表3。
<有机物的含量的测定方法>
No.1~No.10银粉末中的有机物的含量用如下方法计算出。称取与混合溶液混合之前的银粉末,在大气中在150℃的温度加热了30分钟。加热之后,放冷至室温,并测定了银粉末的质量。通过下述式(1)计算出有机物的含量。其结果,有机物的含量为0.2质量%。
有机物的含量(质量%)={(A-B)/A}×100 (1)
其中,式(1)中的A为加热前的银粉末的质量,B为加热后的银粉末的质量。将所获得的结果示于表3。
接着,对制备银膏的实施例1~28及比较例1~9进行说明。
<实施例1>
为了将银膏设为100质量%,将混合溶液1(24.50质量%)、No.1银粉末(75.00质量%)及作为添加剂的二乙二醇(D1)(0.50质量%)混合之后,利用行星式行星搅拌机进行搅拌,并进一步利用三辊磨机进行混炼。由此获得银膏。将该银膏作为实施例1。
<实施例2~28及比较例1~9>
实施例2~28及比较例1~9的36种银膏的各个混合溶液利用表1及表2所示的脂肪酸银、脂肪族胺及溶剂来制备,并且以如表4及表5所示的比例分别配制银粉末、混合溶液及添加剂。除了表4及表5所示的银粉末、混合溶液及添加剂的配制以外,以与实施例1同样的方式,制备了银膏。然而,比较例2与4由于后述的理由没有成为膏。在实施例5与实施例6中,使用了两种添加剂。在实施例12、比较例1、比较例2、比较例5、比较例6及比较例9中,未使用添加剂。
另外,在表4及表5中的混合溶液的种类栏中,在实施例1~28及比较例1~9中使用的混合溶液由“混合溶液1~18”或“混合溶液20~22”中的任一个表示。并且,在实施例1~28及比较例1~9中,配制了表3所示的粒度分布不同的10种(No.1~No.10)银粉末中的任一个。在表4及表5中的银粉末的种类栏中,由“No.1~No.10”中的任一个表示使用实施例1~28及比较例1~9的银粉末。并且,在表4及表5中的添加剂的种类栏中,“D1”为二乙二醇,“D2”为三乙二醇,“D3”为平均分子量为1000的聚乙二醇,“D4”为苯甲酸,“D5”为乙二醇。将粘合剂中的添加剂的含有比例(质量比)示于表4及表5。
<比较试验2及评价>
〔交换电流密度〕
通过如下方法对制作实施例1~28及比较例1~9的银膏之前的粘合剂的交换电流密度进行了测定。交换电流密度是指电极反应处于平衡状态时的电流密度。电极反应处于平衡状态时,正电流与负电流的绝对值相等。将该电流称为交换电流,将电极的每单位面积的交换电流称为交换电流密度。使用电化学测定装置(BAS公司制造、ALS700系列),在粘合剂中配置工作电极Cu、对电极Ag,并进一步配置了参比电极Pt。具体而言,在内径φ20mm的玻璃容器中使用粘合剂10mL、露出面积0.0025dm2的工作电极Cu,将电极间的距离(工作电极Cu与对电极Ag的距离)配置成10mm。通过线性扫描伏安法(LSV(电位扫描)法),以开路电位为基准,使电极电位从+250mV变为-250mV并测定了电流值。扫描速度为100mV/秒。
利用i≈(i0Fη)/(RT)的式子,通过低过压电近似计算出交换电流密度(i0)。上述式子中,R为气体常数,T为绝对温度(K),η为过电压(V)。
将测定数据的电流密度为零的电位作为平衡电位,从平衡电位-1mV至平衡电位-10mV为止,每1mV提取总计10个点的电流值数据。将所提取的10个点的电流值数据用最小二乘法进行拟合,并将其倾斜率作为交换电流密度。将实施例1~28及比较例1~9的粘合剂的交换电流密度示于表4及表5。
〔接合体的接合强度的测定方法〕
使用实施例1~28及比较例1、3、5~9的35种银膏分别制作了接合体。在比较例2和4中,没有成为膏,因此没有进行接合体的接合强度的测定。首先,准备了在仿制电子部件的表面实施了镀金的10mm见方的Si晶片(厚度:200μm)。作为铜或铜合金部件,准备了20mm见方的无氧铜板(厚度:1mm)。另外,在该铜板的表面未形成金属化层。接下来,在无氧铜板的表面通过金属掩模法涂布银膏形成了银膏层。接着,在银膏层上搭载Si晶片来制作了层叠体。此外,通过在氧浓度以体积基准计为100ppm的氮气氛下且以250℃的温度保持60分钟来加热该层叠体,并且经由接合层将Si晶片接合于无氧铜板。将这些接合体作为实施例1~28及比较例1、3、5~9的接合体。另外,关于层叠体,没有在其层叠方向上进行加压。以如下方式测定了这些接合体的接合强度。
使用剪切强度评价试验机(TRY PRECISION制造:MFM-1500HF)对实施例1~28及比较例1、3、5~9的35种接合体的接合强度进行了测定。具体而言,接合强度的测定通过如下方法进行:水平固定接合体的无氧铜板,在距离接合层的表面(上面)为50μm的上方位置,利用剪切工具,从侧面沿水平方向推动接合体的Si晶片,并测定Si晶片断裂时的强度。另外,剪切工具的移动速度为0.1mm/秒。在每种条件下进行三次强度试验,将这些算术平均值作为接合强度的测定值。
〔银膏的稳定性〕
将在实施例1~28及比较例1、3、5~9中获得的35种银膏放入容器并密封,且在25℃保管2周。用螺旋式粘度计(Malcom制造:PCU-02V)对保管前与保管后的银膏的各粘度进行了测定。测定条件设为25℃、转速10rpm。保管后的银膏的粘度相比保管前的银膏的粘度增加25%以上的情况判定为“合格”,增加10%以上且小于25%的情况判定为“良好”,增加小于10%的情况判定为“优秀”。将其结果示于表4及表5。
[表4]
D1:二乙二醇
D2:三乙二醇
D3:聚乙二醇(分子量1000)
D4:苯甲酸
D5:乙二醇
[表5]
D1:二乙二醇
D2:三乙二醇
D3:聚乙二醇(分子量1000)
D4:苯甲酸
D5:乙二醇
从表5可知,在比较例1中,由于使用包含未添加脂肪酸银的混合溶液20(15.00质量%)的同时不包含添加剂的银膏来制作接合体,因此不包含添加剂,由此粘合剂的交换电流密度极小且为小于1μA/dm2。除此以外,由于混合溶液不包含脂肪酸银,因此接合体的接合强度较小且为10MPa。
并且,在比较例2中,使用包含未添加脂肪族胺的混合溶液21(15.00质量%)的同时不包含添加剂的银膏来想要制作接合体,但由于混合溶液21不包含脂肪族胺,因此没有形成银膏,所以无法制作接合体。
并且,在比较例3中,由于使用包含未添加脂肪酸银的混合溶液20(14.00质量%)、及作为添加剂的二乙二醇(D1)(1.00质量%)的银膏来制作接合体,因此添加剂与粘合剂的质量比虽然为0.067,但混合溶液不包含脂肪酸银,并且,粘合剂的交换电流密度极小且为小于1μA/dm2。因此,即使使用二乙二醇(添加剂),接合体的接合强度也较小且为10MPa。
并且,在比较例4中,使用包含未添加脂肪族胺的混合溶液21(14.00质量%)、及作为添加剂的二乙二醇(D1)(1.00质量%)的银膏来想要制作接合体,但由于混合溶液21不包含脂肪族胺,因此没有形成银膏,所以无法制作接合体。
并且,在比较例5中,由于使用包含添加了脂肪酸银及脂肪族胺的混合溶液1(15.00质量%)及No.10银粉末(85.00质量%)的同时不包含添加剂的银膏来制作接合体,因此不包含添加剂,由此粘合剂的交换电流密度极大且为2000μA/dm2。因此,接合体的接合强度较小且为6MPa。
并且,在比较例6中,由于使用包含添加了脂肪酸银及脂肪族胺的混合溶液7(15.00质量%)的同时不包含添加剂的银膏制作接合体,因此不包含添加剂,由此粘合剂的交换电流密度极大且为3000μA/dm2。因此,接合体的接合强度较小且为7MPa。
并且,在比较例7中,由于使用包含添加了脂肪酸银及脂肪族胺的混合溶液7(14.00质量%)的同时包含作为添加剂的乙二醇(D5)(1.00质量%)的银膏来制作接合体,因此添加剂为乙二醇,所以粘合剂的交换电流密度极大且为3000μA/dm2。因此,接合体的接合强度较小且为9MPa。
并且,在比较例8中,由于使用包含添加了脂肪酸银及脂肪族胺的混合溶液1(5.00质量%)、及作为添加剂的二乙二醇(D1)(10.00质量%)的银膏来制作接合体,因此作为添加剂的二乙二醇的含有比例(0.667)过大,所以粘合剂的交换电流密度极小且为5μA/dm2。因此,接合体的接合强度较小且为9MPa。
并且,在比较例9中,制备包含添加了脂肪酸银及脂肪族胺的混合溶液22(15.00质量%)的同时不包含添加剂的银膏,混合溶液22的溶剂为聚乙二醇(C7)。在比较例9中,由于使用该银膏制作接合体,因此不包含添加剂,且溶剂使用聚乙二醇(C7),由此粘合剂的交换电流密度极小且为8μA/dm2。因此,接合体的接合强度较小且为10MPa。
相对于这些比较例1、3、5~9,在实施例1~11、13~28中,使用将混合溶液1~18、“No.1~No.6银粉末”或“No.10银粉末”及本发明的第二或第三方式中规定的添加剂进行混炼并制备而成的银膏制作了接合体,其中,该混合溶液1~18使用在本发明的第一方式中规定的交换电流密度范围内的粘合剂且包含脂肪酸银、脂肪族胺及溶剂、或者包含脂肪酸银及脂肪族胺,该“No.1~No.6银粉末”在55体积%以上且95体积%以下的范围内包含粒径为100nm以上且小于500nm的第一银粒子、在5体积%以上且40体积%以下的范围内包含粒径为50nm以上且小于100nm的第二银粒子并且在5体积%以下的范围内包含粒径小于50nm的第三银粒子,该“No.10银粉末”包含100体积%的粒径为100nm以上且小于500nm的第一银粒子。
并且,在实施例12中,使用包含乙酸银、十二胺、丁基卡必醇乙酸酯的混合溶液9,来代替使用添加剂。因此,可知在实施例1~28中,接合体的接合强度增大且在15MPa至30MPa的范围,获得接合强度高的接合体。
并且,银膏的稳定性也为“合格”、“良好”及“优秀”。尤其,作为添加剂使用二乙二醇(D1)及三乙二醇(D2)的银膏的稳定性为“优秀”,稳定性高。推测这是使银胺络合物稳定化的效果
产业上的可利用性
本发明的银膏能够利用于将如高输出功率LED元件或功率半导体元件等半导体元件、半导体封装件那样的电子部件与DBC基板(覆铜基板)或引线框架等基板即铜或铜合金部件接合的接合层等。因此,能够实现产生上的利用。
符号说明
1、11 铜或铜合金部件
1a、11a 铜或铜合金部件的表面
2、12 银粉末
3、13 银膏层
4、14 粘合剂
15 镀银伪膜。
Claims (6)
1.一种银膏,包含银粉末及粘合剂,该银膏的特征在于,
所述粘合剂至少包含脂肪酸银及脂肪族胺,所述粘合剂的交换电流密度在10μA/dm2以上且1000μA/dm2以下的范围内。
2.根据权利要求1所述的银膏,其中,
所述粘合剂包含二乙二醇、三乙二醇、聚乙二醇或苯甲酸中的任一种或两种以上作为添加剂。
3.根据权利要求1或2所述的银膏,其中,
所述粘合剂中的所述添加剂的含有比例以添加剂/粘合剂的质量比计在0.003以上且0.333以下的范围内。
4.根据权利要求1至3中任一项所述的银膏,其中,
所述银粉末在55体积%以上且95体积%以下的范围内包含粒径在100nm以上且小于500nm的第一银粒子,在5体积%以上且40体积%以下的范围内包含粒径在50nm以上且小于100nm的第二银粒子,并且在5体积%以下的范围内包含粒径小于50nm的第三银粒子。
5.一种银膏的制造方法,其特征在于,包括如下工序:
混合脂肪酸银和脂肪族胺、或者混合脂肪酸银、脂肪族胺及除了二醇类溶剂以外的溶剂而获得混合物;
将所述混合物加热并搅拌之后冷却而获得混合溶液;及
将所述混合溶液、银粉末及权利要求2或3所述的添加剂进行混炼而获得银膏。
6.一种接合体的制造方法,包括如下工序:
在铜或铜合金部件的表面直接涂布权利要求1至4中任一项所述的银膏以形成银膏层;
在所述银膏层上层叠电子部件来制作层叠体;及
通过在氧浓度以体积基准计为1000ppm以下的氮气氛下对所述层叠体进行加热,使所述银膏层中的银粉末烧结以形成接合层,并且制作所述铜或铜合金部件与所述电子部件经由接合层接合的接合体。
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005032471A (ja) * | 2003-07-08 | 2005-02-03 | Hitachi Chem Co Ltd | 導電ペースト及びその製造方法 |
CN1646633A (zh) * | 2002-04-10 | 2005-07-27 | 株式会社藤仓 | 导电性组合物、导电性覆膜和导电性覆膜的形成方法 |
WO2012133767A1 (ja) * | 2011-03-31 | 2012-10-04 | ナミックス株式会社 | 熱伝導性組成物及び熱伝導体 |
CN103917316A (zh) * | 2011-11-18 | 2014-07-09 | 住友金属矿山株式会社 | 银粉、银粉的制造方法和导电性糊剂 |
CN104080561A (zh) * | 2012-02-02 | 2014-10-01 | 户田工业株式会社 | 银微粒及其制造方法以及含有该银微粒的导电性膏、导电性膜和电子设备 |
CN105307801A (zh) * | 2013-06-21 | 2016-02-03 | 同和电子科技有限公司 | 接合材料及使用该接合材料的接合方法 |
CN106232268A (zh) * | 2014-04-25 | 2016-12-14 | 株式会社大赛璐 | 银粒子涂料组合物 |
CN106457384A (zh) * | 2014-05-30 | 2017-02-22 | 同和电子科技有限公司 | 接合材料及使用该接合材料的接合方法 |
JP2018055883A (ja) * | 2016-09-27 | 2018-04-05 | 株式会社ノリタケカンパニーリミテド | 銀ペーストおよび電子素子 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1118139A (en) | 1979-01-15 | 1982-02-09 | Elyse M. Bullock | Light-stable polypropylene compositions |
JP2008176951A (ja) * | 2007-01-16 | 2008-07-31 | Mitsubishi Chemicals Corp | 銀系微粒子インクペースト |
JP2008198595A (ja) * | 2007-01-16 | 2008-08-28 | Mitsubishi Chemicals Corp | 金属微粒子インクペースト及び有機酸処理金属微粒子 |
CN108102579B (zh) * | 2017-12-26 | 2020-04-21 | 昆明贵金属研究所 | 一种高导热导电胶的制备方法及应用 |
JP7121694B2 (ja) | 2019-06-14 | 2022-08-18 | 株式会社鷺宮製作所 | 電磁弁 |
-
2020
- 2020-12-15 EP EP20902585.7A patent/EP4029627A4/en active Pending
- 2020-12-15 CN CN202080086817.9A patent/CN114829042B/zh active Active
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1646633A (zh) * | 2002-04-10 | 2005-07-27 | 株式会社藤仓 | 导电性组合物、导电性覆膜和导电性覆膜的形成方法 |
JP2005032471A (ja) * | 2003-07-08 | 2005-02-03 | Hitachi Chem Co Ltd | 導電ペースト及びその製造方法 |
WO2012133767A1 (ja) * | 2011-03-31 | 2012-10-04 | ナミックス株式会社 | 熱伝導性組成物及び熱伝導体 |
CN103917316A (zh) * | 2011-11-18 | 2014-07-09 | 住友金属矿山株式会社 | 银粉、银粉的制造方法和导电性糊剂 |
CN104080561A (zh) * | 2012-02-02 | 2014-10-01 | 户田工业株式会社 | 银微粒及其制造方法以及含有该银微粒的导电性膏、导电性膜和电子设备 |
CN105307801A (zh) * | 2013-06-21 | 2016-02-03 | 同和电子科技有限公司 | 接合材料及使用该接合材料的接合方法 |
CN106232268A (zh) * | 2014-04-25 | 2016-12-14 | 株式会社大赛璐 | 银粒子涂料组合物 |
CN106457384A (zh) * | 2014-05-30 | 2017-02-22 | 同和电子科技有限公司 | 接合材料及使用该接合材料的接合方法 |
JP2018055883A (ja) * | 2016-09-27 | 2018-04-05 | 株式会社ノリタケカンパニーリミテド | 銀ペーストおよび電子素子 |
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