CN106457384A - 接合材料及使用该接合材料的接合方法 - Google Patents

接合材料及使用该接合材料的接合方法 Download PDF

Info

Publication number
CN106457384A
CN106457384A CN201580028449.1A CN201580028449A CN106457384A CN 106457384 A CN106457384 A CN 106457384A CN 201580028449 A CN201580028449 A CN 201580028449A CN 106457384 A CN106457384 A CN 106457384A
Authority
CN
China
Prior art keywords
silver
grafting material
mass
grafting
dispersant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580028449.1A
Other languages
English (en)
Inventor
远藤圭
远藤圭一
汤崎浩
汤崎浩一
永冈实奈美
三好宏昌
栗田哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Electronics Materials Co Ltd
Original Assignee
Dowa Electronics Materials Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Electronics Materials Co Ltd filed Critical Dowa Electronics Materials Co Ltd
Publication of CN106457384A publication Critical patent/CN106457384A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B23K35/025—Pastes, creams, slurries
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3613—Polymers, e.g. resins
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
    • B23K35/3612—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with organic compounds as principal constituents
    • B23K35/3618—Carboxylic acids or salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
    • B22F2301/255—Silver or gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2302/00—Metal Compound, non-Metallic compound or non-metal composition of the powder or its coating
    • B22F2302/45—Others, including non-metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2304/00—Physical aspects of the powder
    • B22F2304/05—Submicron size particles
    • B22F2304/054—Particle size between 1 and 100 nm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29139—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/2949—Coating material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83054—Composition of the atmosphere
    • H01L2224/83075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/8309—Vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

一种接合材料，由包含被己酸等碳数在8以下的有机化合物覆盖的平均一次粒径为1～50nm的银微粒、被油酸等有机化合物覆盖的平均一次粒径为0.5～4μm的银粒子、由伯醇类溶剂和萜烯类醇溶剂构成的溶剂、由磷酸酯类分散剂(或磷酸酯类分散剂和丙烯酸树脂类分散剂)构成的分散剂的银糊料构成，其中，银微粒的含量为5～30质量％，银粒子的含量为60～90质量％，银微粒和所述银粒子的总含量在90质量％以上，且添加有具有醚键的一元羧酸类烧结助剂。

Description

接合材料及使用该接合材料的接合方法
技术领域
本发明涉及接合材料及使用该接合材料的接合方法，特别涉及由包含银微粒的银糊料构成的接合材料及使用该接合材料将被接合物彼此接合的方法。
背景技术
近年来，提出了将包含银微粒的银糊料作为接合材料使用，使接合材料介于被接合物之间，一边对被接合物间施加压力，一边加热规定时间，使接合材料中的银烧结，从而将被接合物彼此接合(例如，参照日本专利特开2011-80147号公报)。
为了替代焊锡而使用这样的接合材料将被接合物彼此接合，优选能够与利用焊锡将使接合物彼此接合的情况同样地不对被接合物间施加压力而进行接合(无加压接合)。此外，为了防止在被接合物间的接合部形成氧化银而接合力降低，优选在氮气氛等惰性气氛中也能使被接合物彼此接合。
作为这样即使不对被接合物间施加压力也能在惰性气氛中将被接合物彼此接合的接合材料，提出了向包含银微粒的银糊料中添加氧二乙酸(二甘醇酸)等钎剂成分而得到的接合材料(例如，参照日本专利特开2011-240406号公报)。
另外，为了使用金属掩模通过丝网印刷良好地涂布接合材料，需要降低接合材料的粘度。但是，如果降低接合材料的粘度，则接合材料中的银含量降低，而如果提高接合材料中的银的含量，则接合材料的粘度升高，接合材料的粘度和接合材料中银的含量是此消彼长的关系。
通常，为了降低由包含银微粒的银糊料构成的接合材料的粘度，已知向接合材料中添加分散剂，作为银含量高(溶剂的添加量低)且能降低至适于印刷的粘度的接合材料，提出了向包含银微粒的银糊料中添加磷酸酯类分散剂等磷酸类分散剂而得到的接合材料(例如，参照日本专利特开2013-4309号公报)。
然而，如果利用日本专利特开2011-240406号公报的那种向银糊料中添加氧二乙酸(二甘醇酸)等钎剂成分而得到的接合材料、或日本专利特开2013-4309号公报的那种添加磷酸酯类分散剂等磷酸类分散剂而得到的接合材料来使被接合物之间接合，则存在接合部(银接合层)处产生未烧结部而无法良好地接合的情况。
发明内容
所以，本发明鉴于上述现有问题，其目的是提供一种容易印刷在被接合物上且可抑制在被接合物之间的接合部处产生未烧结部的接合材料及使用该接合材料的接合方法。
本发明人为解决上述课题进行了深入研究，发现通过向由包含平均一次粒径为1～50nm的银微粒、平均一次粒径为0.5～4μm的银粒子、溶剂和分散剂的银糊料构成的接合材料中添加具有醚键的一元羧酸类烧结助剂，能够提供容易印刷在被接合物上且可抑制在被接合物之间的接合部处产生未烧结部的接合材料及使用该接合材料的接合方法，从而完成了本发明。
即，本发明的接合材料由包含平均一次粒径为1～50nm的银微粒、平均一次粒径为0.5～4μm的银粒子、溶剂和分散剂的银糊料构成，其中，银微粒的含量为5～30质量％、银粒子的含量为60～90质量％、银微粒和银粒子的总含量在90质量％以上，且添加有具有醚键的一元羧酸类烧结助剂。
该接合材料中，优选具有醚键的一元羧酸类烧结助剂为丁氧基乙氧基乙酸，优选具有醚键的一元羧酸类烧结助剂的量相对于银糊料为0.2～1.5质量％。还优选分散剂为磷酸酯类分散剂，优选磷酸酯类分散剂的量相对于银糊料为0.01～0.2质量％。分散剂还可包含丙烯酸树脂类分散剂。在该场合下，优选丙烯酸树脂类分散剂的量相对于银糊料在2质量％以下。另外，优选溶剂由伯醇类溶剂和萜烯类醇溶剂构成。进一步优选银微粒被己酸等碳数在8以下的有机化合物覆盖，优选银粒子被油酸等有机化合物覆盖。还优选利用流变仪在25℃下以6.4rpm测定上述接合材料的粘度时的粘度在100Pa·s以下。
此外，本发明的接合方法的特征是，通过使上述接合材料介于被接合物之间进行加热，使接合材料中的银烧结以形成银接合层，由该银接合层将被接合物彼此接合。
此外，本说明书中，所谓“银微粒的平均一次粒径”是指利用透射型电子显微镜照片(TEM图像)得到的银微粒的一次粒径的平均值，所谓“银粒子的平均一次粒径”是指通过激光衍射法测定的银粒子的50％粒径(D50直径)(累积50质量％粒径)。
根据本发明，可提供容易印刷在被接合物上且能够抑制在被接合物之间的接合部处产生未烧结部的接合材料、以及使用该接合材料的接合方法。
具体实施方式
本发明的接合材料的实施方式是由包含平均一次粒径为1～50nm的银微粒、平均一次粒径为0.5～4μm的银粒子、溶剂和分散剂的银糊料构成的接合材料，其中，银微粒的含量为5～30质量％、银粒子的含量为60～90质量％、银微粒和银粒子的总含量在90质量％以上，且添加有具有醚键的一元羧酸类烧结助剂。
银微粒(银纳米粒子)的平均一次粒径为1～50nm，优选为5～40nm，进一步优选为10～30nm。还优选银微粒被己酸或山梨酸等碳数在8以下的有机化合物覆盖，更优选被己酸覆盖。
银粒子(银微米粒子)的平均一次粒径为0.5～4μm，优选为0.7～3.5μm，进一步优选为0.8～3μm。还优选银粒子被油酸或硬脂酸等有机化合物覆盖，更优选被油酸覆盖。
具有醚键的一元羧酸类烧结助剂优选为丁氧基乙氧基乙酸。该具有醚键的一元羧酸类烧结助剂的量相对于银糊料优选为0.2～1.5质量％，进一步优选为0.25～1.2质量％。
分散剂优选为包含磷酸酯的分散剂等的磷酸酯类分散剂。该磷酸酯类分散剂的量相对于银糊料优选为0.01～0.2质量％，进一步优选为0.1～0.15质量％。分散剂还可包含丙烯酸树脂类分散剂。在该场合下，丙烯酸树脂类分散剂的量相对于银糊料优选在2质量％以下，进一步优选在1.5质量％以下。
溶剂优选由伯醇类溶剂和萜烯类醇溶剂构成。作为伯醇类溶剂，可使用1-辛醇或1-癸醇等，作为萜烯类醇溶剂，可使用市售的含有萜烯的醇溶剂(日本萜烯化学株式会社(日本テルペン化学株式会社)制造的Terusolve(テルソルブ)TOE-100或Terusolve MTPH等)。溶剂的量相对于银糊料优选为3～8质量％，进一步优选4～7质量％。
另外，利用流变仪(粘弹性测定装置)在25℃下以6.4rpm测定该接合材料的粘度时的粘度优选在100Pa·s以下。
在本发明的接合方法的实施方式中，通过使上述的接合材料介于被接合物之间并进行加热，使接合材料中的银烧结以形成银接合层，由该银接合层将被接合物彼此接合。
具体而言，将上述接合材料涂布在两个被接合物的至少一方上，以使接合材料介于被接合物之间的方式配置，通过在60～200℃、优选80～170℃下进行加热以使接合材料干燥而形成预干燥膜后，通过在210～400℃、优选230～300℃下进行加热以使银糊料中的银烧结而形成银接合层，由该银接合层将被接合物彼此接合。此外，虽然在加热之际无需向被接合物之间施加压力，但也可以施加压力。另外，虽然在氮气氛等惰性气氛中进行加热也能将被接合物彼此接合，但在大气中加圧也能将被接合物彼此接合。
下面，对本发明的接合材料及使用该接合材料的接合方法的实施例进行详细说明。
实施例1
准备由银糊料构成的接合材料，所述银糊料包含19.785质量％的被己酸覆盖的平均一次粒径为20nm的银微粒(同和电子科技有限公司(DOWAエレクトロニクス株式会社)制造的DP-1)、72.215质量％的被油酸覆盖的平均一次粒径为0.8μm的银粒子(同和高科技有限公司(DOWAハイテック株式会社)制造的AG2-1C)、1.0质量％的作为具有醚键的一元羧酸类烧结助剂的丁氧基乙氧基乙酸(BEA)(东京化成工业株式会社(東京化成工業株式会社)制造)、0.14质量％的磷酸酯类分散剂(路博润公司(Lubrizol社)制造的SOLPLUS D540)，且包含作为溶剂的3.64质量％的1-癸醇(醇)和3.22质量％的萜烯类醇溶剂(日本萜烯化学株式会社制造的Terusolve MTPH)。该接合材料中的银浓度为91.32质量％。
利用流变仪(粘弹性测定装置)(赛默飞世尔公司(Thermo社)制造的HAAKERheostress 600，使用锥：C35/2°)求得该接合材料(银糊料)的粘度，结果是：在25℃、0.6rpm(2.1s-1)下为211.8(Pa·s)，6.4rpm(20.1s-1)下为18.09(Pa·s)，25℃下测定的2s-1粘度对20s-1粘度的比(2s-1粘度/20.1s-1粘度)(触变比)为11.7，接合材料(银糊料)的印刷性(印刷适应性)良好。
另外，准备在用乙醇脱脂后用10％的硫酸处理过的尺寸为10mm×10mm×1mm的铜板、和实施了Ag镀敷的尺寸为3mm×3mm×0.3mm的Si芯片。
接着，在铜板上配置厚度为50μm的金属掩模，将上述接合材料(银糊料)以达到3.5mm×3.5mm的尺寸且厚度为50μm的条件涂布在铜板上。
然后，在涂布于铜板上的接合材料上配置Si芯片，对接合材料与Si芯片之间施加10秒的0.1MPa的荷重后，利用灯炉在氮气氛中以0.1℃/s的升温速度从25℃升温至150℃，进行在150℃下保持30分钟的预烧结而使银糊料干燥，之后，以0.1℃/s的升温速度升温至250℃，进行在250℃下保持60分钟的正式烧结，使银糊料中的银烧结而形成银接合层，由该银接合层将Si芯片接合至铜板。
对于由此得到的接合体，利用扫描电子显微镜(SEM)以3万倍的倍率对接合部(银接合层)的截面进行观察，结果是未发现未烧结部，接合良好。
实施例2
除了使丁氧基乙氧基乙酸(BEA)的量为0.5质量％、使1-癸醇(醇)的量为4.14质量％以外，准备与实施例1相同的由银糊料构成的接合材料。该接合材料中的银浓度为91.36质量％。
利用与实施例1相同的方法求得该接合材料(银糊料)的粘度，结果是：在25℃、0.6rpm(2.1s-1)下为203.2(Pa·s)，6.4rpm(20.1s-1)下为15.55(Pa·s)，25℃下测定的2s-1粘度对20s-1粘度的比(触变比)为13.1，接合材料(银糊料)的印刷性(印刷适应性)良好。
使用该接合材料(银糊料)，利用与实施例1相同的方法得到接合体。对于该接合体，利用与实施例1相同的方法对银接合层进行观察，结果是未发现未接合部，接合良好。
实施例3
除了使丁氧基乙氧基乙酸(BEA)的量为0.3质量％、使1-癸醇(醇)的量为4.34质量％以外，准备与实施例1相同的由银糊料构成的接合材料。该接合材料中的银浓度为91.36质量％。
利用与实施例1相同的方法求得该接合材料(银糊料)的粘度，结果是：在25℃、0.6rpm(2.1s-1)下为125.7(Pa·s)，6.4rpm(20.1s-1)下为16.69(Pa·s)，25℃下测定的2s-1粘度对20s-1粘度的比(触变比)为7.5，接合材料(银糊料)的印刷性(印刷适应性)良好。
使用该接合材料(银糊料)，利用与实施例1相同的方法得到接合体。对于该接合体，利用与实施例1相同的方法对银接合层进行观察，结果是未发现未接合部，接合良好。
实施例4
除了在磷酸酯类分散剂之外还添加1.0质量％的丙烯酸树脂类分散剂(楠本化成株式会社(楠本化成株式会社)制造的V0340)、使1-癸醇(醇)的量为2.64质量％以外，准备与实施例1相同的由银糊料构成的接合材料。该接合材料中的银浓度为91.32质量％。
利用与实施例1相同的方法求得该接合材料(银糊料)的粘度，结果是：在25℃、0.6rpm(2.1s-1)下为497.5(Pa·s)，6.4rpm(20.1s-1)下为39.46(Pa·s)，25℃下测定的2s-1粘度对20s-1粘度的比(触变比)为12.6，接合材料(银糊料)的印刷性(印刷适应性)良好。
使用该接合材料(银糊料)，利用与实施例1相同的方法得到接合体。对于该接合体，利用与实施例1相同的方法对银接合层进行观察，结果是未发现未接合部，接合良好。
比较例1
除了使用0.067质量％的具有醚键的二元羧酸类烧结助剂二甘醇酸(DGA)(绿色化学株式会社(みどり化学株式会社)制造)替代丁氧基乙氧基乙酸(BEA)、使1-癸醇(醇)的量为3.58质量％以外，准备与实施例4相同的由银糊料构成的接合材料。该接合材料中的银浓度为91.33质量％。
利用与实施例1相同的方法求得该接合材料(银糊料)的粘度，结果是：在25℃、0.6rpm(2.1s-1)下为494.0(Pa·s)，6.4rpm(20.1s-1)下为48.65(Pa·s)，25℃下测定的2s-1粘度对20s-1粘度的比(触变比)为10.2，接合材料(银糊料)的印刷性(印刷适应性)良好。
使用该接合材料(银糊料)，利用与实施例1相同的方法得到接合体。对于该接合体，利用与实施例1相同的方法对银接合层进行观察，结果是容易地发现了未接合部，接合不佳。
比较例2
除了使二甘醇酸(DGA)(二元羧酸)的量为0.201质量％、使1-癸醇(醇)的量为3.44质量％以外，准备与比较例1相同的由银糊料构成的接合材料。该接合材料中的银浓度为91.48质量％。
利用与实施例1相同的方法求得该接合材料(银糊料)的粘度，结果是粘度过高而无法测定，接合材料(银糊料)的印刷性(印刷适应性)不佳。
使用该接合材料(银糊料)，利用与实施例1相同的方法得到接合体。对于该接合体，利用与实施例1相同的方法对银接合层进行观察，结果是观察到了少量未接合部，接合不佳。
比较例3
除了使丁氧基乙氧基乙酸(BEA)的量为0.1质量％、使1-癸醇(醇)的量为4.54质量％以外，准备与实施例1相同的由银糊料构成的接合材料。该接合材料中的银浓度为89.46质量％。
利用与实施例1相同的方法求得该接合材料(银糊料)的粘度，结果是：在25℃、0.6rpm(2.1s-1)下为137.4(Pa·s)，6.4rpm(20.1s-1)下为19.0(Pa·s)，25℃下测定的2s-1粘度对20s-1粘度的比(触变比)为7.2，接合材料(银糊料)的印刷性(印刷适应性)良好。
使用该接合材料(银糊料)，利用与实施例1相同的方法得到接合体。对于该接合体，利用与实施例1相同的方法对银接合层进行观察，结果是观察到了少量未接合部，接合不佳。
这些实施例和比较例的接合材料的制造条件和特性示于表1～表2。在表2中，以“○”表示接合材料的粘度、印刷性和烧结性为良好的情况，以“×”表示不佳的情况。
表1
表2

Claims (14)

1.一种接合材料，其特征在于，由包含平均一次粒径为1～50nm的银微粒、平均一次粒径为0.5～4μm的银粒子、溶剂和分散剂的银糊料构成，其中，银微粒的含量为5～30质量％、银粒子的含量为60～90质量％、银微粒和所述银粒子的总含量在90质量％以上，且添加有具有醚键的一元羧酸类烧结助剂。
2.如权利要求1所述的接合材料，其特征在于，所述具有醚键的一元羧酸类烧结助剂为丁氧基乙氧基乙酸。
3.如权利要求1所述的接合材料，其特征在于，所述具有醚键的一元羧酸类烧结助剂的量相对于所述银糊料为0.2～1.5质量％。
4.如权利要求1所述的接合材料，其特征在于，所述分散剂为磷酸酯类分散剂。
5.如权利要求4所述的接合材料，其特征在于，所述磷酸酯类分散剂的量相对于所述银糊料为0.01～0.2质量％。
6.如权利要求4所述的接合材料，其特征在于，所述分散剂包含丙烯酸树脂类分散剂。
7.如权利要求6所述的接合材料，其特征在于，所述丙烯酸树脂类分散剂的量相对于所述银糊料在2质量％以下。
8.如权利要求1所述的接合材料，其特征在于，所述溶剂由伯醇类溶剂和萜烯类醇溶剂构成。
9.如权利要求1所述的接合材料，其特征在于，所述银微粒被碳数在8以下的有机化合物覆盖。
10.如权利要求9所述的接合材料，其特征在于，覆盖所述银微粒的有机化合物为己酸。
11.如权利要求1所述的接合材料，其特征在于，所述银粒子被有机化合物覆盖。
12.如权利要求11所述的接合材料，其特征在于，覆盖所述银粒子的有机化合物为油酸。
13.如权利要求1所述的接合材料，其特征在于，利用流变仪在25℃下以6.4rpm测定所述接合材料的粘度时的粘度在100Pa·s以下。
14.一种接合方法，其特征在于，通过使权利要求1～13中任一项所述的接合材料介于被接合物之间进行加热，使接合材料中的银烧结以形成银接合层，由该银接合层将被接合物彼此接合。
CN201580028449.1A 2014-05-30 2015-05-15 接合材料及使用该接合材料的接合方法 Pending CN106457384A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014-112212 2014-05-30
JP2014112212A JP6373066B2 (ja) 2014-05-30 2014-05-30 接合材およびそれを用いた接合方法
PCT/JP2015/064665 WO2015182489A1 (ja) 2014-05-30 2015-05-15 接合材およびそれを用いた接合方法

Publications (1)

Publication Number Publication Date
CN106457384A true CN106457384A (zh) 2017-02-22

Family

ID=54698823

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580028449.1A Pending CN106457384A (zh) 2014-05-30 2015-05-15 接合材料及使用该接合材料的接合方法

Country Status (7)

Country Link
US (1) US10903185B2 (zh)
EP (1) EP3150301A4 (zh)
JP (1) JP6373066B2 (zh)
KR (1) KR102272847B1 (zh)
CN (1) CN106457384A (zh)
TW (1) TWI657463B (zh)
WO (1) WO2015182489A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110430951A (zh) * 2017-03-15 2019-11-08 日立化成株式会社 接合用金属糊料、接合体及其制造方法以及半导体装置及其制造方法
CN114450106A (zh) * 2019-10-15 2022-05-06 千住金属工业株式会社 接合材料、接合材料的制备方法以及接合体
CN114829042A (zh) * 2019-12-19 2022-07-29 三菱综合材料株式会社 银膏及其制造方法以及接合体的制造方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107112249B (zh) * 2015-02-04 2020-04-14 纳美仕有限公司 导热膏及其制备方法
JP6795307B2 (ja) * 2016-02-12 2020-12-02 国立大学法人大阪大学 接合材、接合材の製造方法、接合構造体の作製方法
JP6920029B2 (ja) 2016-04-04 2021-08-18 日亜化学工業株式会社 金属粉焼結ペースト及びその製造方法、導電性材料の製造方法
CN106158068A (zh) * 2016-07-05 2016-11-23 湖南省国银新材料有限公司 导电银浆及其制备方法
JP6859799B2 (ja) * 2017-03-29 2021-04-14 三菱マテリアル株式会社 ペースト状銀粉組成物、接合体の製造方法および銀膜の製造方法
JP7350653B2 (ja) * 2017-11-13 2023-09-26 日東電工株式会社 焼結接合用組成物、焼結接合用シート、および焼結接合用シート付きダイシングテープ
JP6831416B2 (ja) * 2019-03-28 2021-02-17 Ｄｏｗａエレクトロニクス株式会社 接合材及び接合方法
JP7388069B2 (ja) * 2019-09-11 2023-11-29 Ｔｏｐｐａｎホールディングス株式会社 メタリック塗液及び被塗工物
JP6930578B2 (ja) * 2019-12-20 2021-09-01 三菱マテリアル株式会社 銀ペースト、及び、接合体の製造方法
FR3113774B1 (fr) * 2020-09-03 2023-04-21 Commissariat Energie Atomique Procédé d’interconnexion de composants d’un système électronique par frittage
FR3113773B1 (fr) 2020-09-03 2023-04-21 Commissariat Energie Atomique Procédé d’interconnexion de composants d’un système électronique par frittage
US20230311249A1 (en) 2020-09-30 2023-10-05 Dowa Electronics Materials Co., Ltd. Metal paste for bonding and bonding method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101990474A (zh) * 2008-01-17 2011-03-23 株式会社应用纳米粒子研究所 复合银纳米粒子、复合银纳米糊膏、其制法、制造装置、接合方法及图案形成方法
CN102802846A (zh) * 2010-03-15 2012-11-28 同和电子科技有限公司 接合材料及使用其的接合方法
EP2581156A1 (en) * 2010-06-11 2013-04-17 DOWA Electronics Materials Co., Ltd. Low-temperature-sinterable bonding material, and bonding method using the bonding material
TW201330954A (zh) * 2012-01-20 2013-08-01 同和電子科技股份有限公司 接合材料及使用其之接合方法
CN103250236A (zh) * 2010-11-22 2013-08-14 同和电子科技有限公司 接合材料及接合体以及接合方法
US20140113109A1 (en) * 2011-06-10 2014-04-24 Dowa Electronics Materials Co., Ltd. Bonding material and bonded object produced using same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101234233B1 (ko) * 2006-05-18 2013-02-18 삼성에스디아이 주식회사 포스페이트를 포함하는 반도체 전극 및 이를 채용한태양전지
WO2009116136A1 (ja) * 2008-03-18 2009-09-24 株式会社応用ナノ粒子研究所 複合銀ナノペースト、その製法及びナノペースト接合方法
JP5824201B2 (ja) 2009-09-11 2015-11-25 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
JP4928639B2 (ja) 2010-03-15 2012-05-09 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法
JP5811314B2 (ja) * 2010-06-16 2015-11-11 国立研究開発法人物質・材料研究機構 金属ナノ粒子ペースト、並びに金属ナノ粒子ペーストを用いた電子部品接合体、ｌｅｄモジュール及びプリント配線板の回路形成方法
JP5509283B2 (ja) 2012-09-13 2014-06-04 ニホンハンダ株式会社 加熱焼結性金属微粒子の製造方法、ペースト状金属微粒子組成物、固形状金属または固形状金属合金の製造方法、金属製部材の接合方法、プリント配線板の製造方法および電気回路接続用バンプの製造方法
JP6121804B2 (ja) * 2013-06-04 2017-04-26 Ｄｏｗａエレクトロニクス株式会社 接合材およびその接合材を用いて電子部品を接合する方法
JP6118192B2 (ja) * 2013-06-21 2017-04-19 Ｄｏｗａエレクトロニクス株式会社 接合材およびそれを用いた接合方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101990474A (zh) * 2008-01-17 2011-03-23 株式会社应用纳米粒子研究所 复合银纳米粒子、复合银纳米糊膏、其制法、制造装置、接合方法及图案形成方法
CN102802846A (zh) * 2010-03-15 2012-11-28 同和电子科技有限公司 接合材料及使用其的接合方法
EP2581156A1 (en) * 2010-06-11 2013-04-17 DOWA Electronics Materials Co., Ltd. Low-temperature-sinterable bonding material, and bonding method using the bonding material
CN103250236A (zh) * 2010-11-22 2013-08-14 同和电子科技有限公司 接合材料及接合体以及接合方法
US20140113109A1 (en) * 2011-06-10 2014-04-24 Dowa Electronics Materials Co., Ltd. Bonding material and bonded object produced using same
TW201330954A (zh) * 2012-01-20 2013-08-01 同和電子科技股份有限公司 接合材料及使用其之接合方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
夏征农: "《大辞海 化工轻工纺织卷》", 31 August 2009, 上海辞书出版社 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110430951A (zh) * 2017-03-15 2019-11-08 日立化成株式会社 接合用金属糊料、接合体及其制造方法以及半导体装置及其制造方法
CN110430951B (zh) * 2017-03-15 2021-11-16 昭和电工材料株式会社 接合用金属糊料、接合体及其制造方法以及半导体装置及其制造方法
CN114450106A (zh) * 2019-10-15 2022-05-06 千住金属工业株式会社 接合材料、接合材料的制备方法以及接合体
CN114450106B (zh) * 2019-10-15 2023-06-06 千住金属工业株式会社 接合材料、接合材料的制备方法以及接合体
CN114829042A (zh) * 2019-12-19 2022-07-29 三菱综合材料株式会社 银膏及其制造方法以及接合体的制造方法
CN114829042B (zh) * 2019-12-19 2023-08-04 三菱综合材料株式会社 银膏及其制造方法以及接合体的制造方法

Also Published As

Publication number Publication date
WO2015182489A1 (ja) 2015-12-03
KR20170012437A (ko) 2017-02-02
JP2015225842A (ja) 2015-12-14
EP3150301A1 (en) 2017-04-05
EP3150301A4 (en) 2018-01-03
US20170077057A1 (en) 2017-03-16
US10903185B2 (en) 2021-01-26
TWI657463B (zh) 2019-04-21
KR102272847B1 (ko) 2021-07-02
JP6373066B2 (ja) 2018-08-15
TW201603051A (zh) 2016-01-16

Similar Documents

Publication Publication Date Title
CN106457384A (zh) 接合材料及使用该接合材料的接合方法
TWI636842B (zh) 接合材及使用其之接合方法
KR102687424B1 (ko) 무가압 접합용 구리 페이스트, 접합체 및 반도체 장치
JP6153077B2 (ja) 金属ナノ粒子ペースト、それを含有する接合材料、およびそれを用いた半導体装置
WO2012070262A1 (ja) 接合材料および接合体、並びに接合方法
TWI790258B (zh) 金屬接合用組成物、金屬接合積層體及電控制機器
JP6032110B2 (ja) 金属ナノ粒子材料、それを含有する接合材料、およびそれを用いた半導体装置
JP6884692B2 (ja) 銅粉及びそれを含む導電性組成物
JPWO2020040184A1 (ja) 接合用組成物
JPWO2019021637A1 (ja) 金属接合積層体の製造方法
WO2021064826A1 (ja) 接合用銅ペースト、接合体の製造方法及び接合体
TWI841606B (zh) 接合體及半導體裝置的製造方法以及接合用銅糊
WO2018221594A1 (ja) 接合材、接合体および接合方法
JP5821743B2 (ja) 導電性組成物及び接合体の製造方法
WO2022138755A1 (ja) フラックス
JP2021050412A (ja) 接合材料、それを含有する接合材料ペースト、並びにそれらを用いた接合方法及び半導体装置
JP2017106086A (ja) 接合材及び接合体の製造方法
JP2023062426A (ja) 接合用組成物、接合体及びその製造方法
JP5605423B2 (ja) 接合体の製造方法
JP2010202963A (ja) 貫通孔充填用金属粉末およびその製造方法
JP2015093296A (ja) 金属ナノ粒子を用いた金属接合構造及び金属接合方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170222

RJ01 Rejection of invention patent application after publication