WO2021064826A1 - 接合用銅ペースト、接合体の製造方法及び接合体 - Google Patents
接合用銅ペースト、接合体の製造方法及び接合体 Download PDFInfo
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- WO2021064826A1 WO2021064826A1 PCT/JP2019/038626 JP2019038626W WO2021064826A1 WO 2021064826 A1 WO2021064826 A1 WO 2021064826A1 JP 2019038626 W JP2019038626 W JP 2019038626W WO 2021064826 A1 WO2021064826 A1 WO 2021064826A1
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- Prior art keywords
- bonding
- copper
- copper paste
- particles
- mass
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H01L2924/30—Technical effects
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- H01L2924/37001—Yield
Definitions
- the present invention relates to a copper paste for bonding, a method for producing a bonded body, and a bonded body.
- Patent Document 1 discloses a bonding material containing cupric oxide particles having an average particle size of 1 nm to 50 ⁇ m and a reducing agent as a bonding material for bonding a semiconductor element and an electrode.
- Patent Document 2 discloses copper nanoparticles, copper microparticles, copper submicroparticles, or a bonding material containing both of them.
- Patent No. 5006081 Japanese Unexamined Patent Publication No. 2014-167145
- the bonding material is required to have printability suitable for the printing process by an automatic printing machine such as a screen printing machine.
- a paste in which metal particles are dispersed in a dispersion medium can be improved in printability by blending a dispersion medium such as an organic solvent to reduce the viscosity.
- a dispersion medium such as an organic solvent
- the present invention has been made in view of the above circumstances, and a copper paste for bonding capable of improving printability while maintaining sufficient bondability, and a method for producing a bonded body and a bonded body using the same.
- the purpose is to provide.
- One aspect of the present invention relates to a bonding copper paste containing metal particles and a dispersion medium, containing copper particles as metal particles, and containing dihydroterpineol as a dispersion medium.
- the copper paste for bonding can improve printability while maintaining sufficient bonding properties.
- a bonded body can be efficiently manufactured by a mass production process using an automatic printing machine such as a screen printing machine.
- the bonding copper paste may have a metal particle content of 85 to 98% by mass based on the total amount of the bonding copper paste. In this case, it becomes easy to secure the bonding strength, and it becomes easy to cope with the increase in the size of the member to be bonded (for example, the size of the semiconductor element).
- the copper paste for bonding can further contain a compound having a boiling point of 300 ° C. or higher as a dispersion medium.
- the copper paste for joining is imparted with plasticity and adhesion until immediately before the start of sintering, facilitating joining without pressure.
- the bonding copper paste may have a viscosity at 25 ° C. of 100 to 200 Pa ⁇ s. In this case, the compatibility with the automatic printing machine is further improved.
- the content of the copper particles may be 80 to 100% by mass based on the total mass of the metal particles.
- the copper paste for joining may be used for screen printing.
- screen printing is also referred to as stencil printing, and means a printing method in which paste is rubbed on a plate having holes (openings).
- the squeegee, scraper and the like are not particularly limited, and known ones can be appropriately applied.
- the copper paste for bonding is a flake-shaped copper particle having a volume average particle diameter of 0.12 to 0.8 ⁇ m and a maximum diameter of 2 to 50 ⁇ m and an aspect ratio of 3.0 or more. May contain microcopper particles of. In this case, it is suitable for joining without pressure.
- no pressure means that the copper paste for joining is only the weight of the member to be joined (that is, it is not subjected to pressure other than the weight of the member), or in addition to the weight thereof, 0. It means a state of receiving a slight pressure of 01 MPa or less.
- the content of the sub-micro copper particles in the copper paste for bonding is 30 to 90% by mass based on the total mass of the copper particles, and the content of the micro copper particles is based on the total mass of the copper particles. It may be 10 to 70% by mass.
- the copper paste for joining may be for non-pressurizing joining.
- Another aspect of the present invention is a method for manufacturing a joined body including a first member, a second member, and a joint portion for joining the first member and the second member.
- the present invention relates to a method for producing a bonded body, comprising a first step of preparing the laminated body and a second step of sintering a copper paste for bonding the laminated body. According to this manufacturing method, by using the copper paste for bonding, both printability and bondability can be achieved, and a bonded body can be efficiently manufactured.
- the above printing may be screen printing.
- the bonding copper paste may be heated without pressure and sintered. In this case, damage to the members joined by the non-pressurized joining can be reduced.
- At least one of the first member and the second member described above may be a semiconductor element.
- a semiconductor device can be obtained as a bonded body.
- Another aspect of the present invention includes a first member, a second member, and a joint portion for joining the first member and the second member, and the joint portion is a sintering of the copper paste for joining.
- At least one of the first member and the second member described above may be a semiconductor element. That is, the junction may be a semiconductor device.
- the present invention it is possible to provide a copper paste for bonding capable of improving printability while maintaining sufficient bondability, and a method for producing a bonded body using the copper paste and a bonded body.
- the bonding copper paste of the present embodiment contains metal particles and a dispersion medium, contains copper particles as metal particles, and contains dihydroterpineol as a dispersion medium.
- a set of a plurality of copper particles is also referred to as "copper particles”. The same applies to metal particles other than copper particles.
- Copper particles examples of the copper particles include sub-micro copper particles, micro copper particles, and copper particles other than these.
- the submicro copper particles are copper particles having a particle size of 0.01 ⁇ m or more and less than 1.00 ⁇ m.
- the submicro copper particles preferably have sinterability in a temperature range of 150 ° C. or higher and 300 ° C. or lower.
- the submicro copper particles preferably contain copper particles having a particle size of 0.01 to 0.80 ⁇ m.
- the sub-micro copper particles may contain 10% by mass or more of copper particles having a particle size of 0.01 to 0.80 ⁇ m, may contain 20% by mass or more, may contain 30% by mass or more, and may contain 100% or more. It may contain mass%.
- the particle size of the copper particles can be calculated from, for example, an SEM image.
- the powder of copper particles is placed on a carbon tape for SEM with a spatula to prepare a sample for SEM.
- This SEM sample is observed with an SEM device at a magnification of 5000.
- a quadrangle circumscribing the copper particles of this SEM image is drawn by image processing software, and one side thereof is used as the particle size of the particles.
- the volume average particle size of the sub-micro copper particles is preferably 0.01 to 0.80 ⁇ m.
- the volume average particle size of the sub-micro copper particles is 0.01 ⁇ m or more, the effects of suppressing the synthesis cost of the sub-micro copper particles, good dispersibility, and suppressing the amount of the surface treatment agent used can be easily obtained.
- the volume average particle size of the sub-micro copper particles is 0.80 ⁇ m or less, the effect of excellent sinterability of the sub-micro copper particles can be easily obtained.
- the volume average particle diameter of the submicro copper particles is 0.02 ⁇ m or more, 0.05 ⁇ m or more, 0.10 ⁇ m or more, 0.11 ⁇ m or more, 0.12 ⁇ m or more, 0.15 ⁇ m. As mentioned above, it may be 0.2 ⁇ m or more or 0.3 ⁇ m or more. Further, from the viewpoint that the above effect is further exhibited, the volume average particle diameter of the submicro copper particles may be 0.60 ⁇ m or less, 0.50 ⁇ m or less, 0.45 ⁇ m or less, or 0.40 ⁇ m or less.
- the volume average particle diameter of the submicro copper particles is, for example, 0.01 to 0.60 ⁇ m, 0.01 to 0.50 ⁇ m, 0.02 to 0.80 ⁇ m, 0.05 to 0.80 ⁇ m, 0.10 to 0. .80 ⁇ m, 0.11 to 0.80 ⁇ m, 0.12 to 0.80 ⁇ m, 0.15 to 0.80 ⁇ m, 0.15 to 0.60 ⁇ m, 0.20 to 0.50 ⁇ m, 0.30 to 0.45 ⁇ m Or, it may be 0.30 to 0.40 ⁇ m.
- the volume average particle diameter means a 50% volume average particle diameter.
- the volume average particle diameter of the metal particles can be measured by, for example, the following method. First, the metal particles as a raw material or the dry metal particles obtained by removing the volatile components from the metal paste are dispersed in a dispersion medium using a dispersant. Next, the volume average particle size of the obtained dispersion is measured with a light scattering method particle size distribution measuring device (for example, Shimadzu nanoparticle size distribution measuring device (SALD-7500 nano, manufactured by Shimadzu Corporation)).
- SALD-7500 nano Shimadzu nanoparticle size distribution measuring device
- the shape of the sub-micro copper particles is not particularly limited.
- Examples of the shape of the submicro copper particles include spherical, massive, needle-like, columnar, flake-like, substantially spherical, and aggregates thereof.
- the shape of the sub-microcopper particles may be spherical, substantially spherical or flake-shaped, and flammable, dispersible, flake-shaped microparticles (for example, flake-shaped microcopper particles). From the viewpoint of mixing with and the like, it may be spherical or substantially spherical.
- the term "flake-like" includes a plate-like shape such as a plate-like shape or a scaly shape.
- the aspect ratio of the sub-microcopper particles may be 5.0 or less from the viewpoint of dispersibility, filling property, and mixing property with flake-shaped microparticles (for example, flake-shaped microcopper particles). It may be 0 or less, 2.5 or less, or 2.0 or less.
- the "aspect ratio" indicates "the long side of the particle / the thickness of the particle". The long side of the particle and the thickness of the particle can be obtained from, for example, an SEM image of the particle.
- the sub-micro copper particles may be treated with a surface treatment agent from the viewpoint of dispersibility of the sub-micro copper particles.
- the surface treatment agent may be adsorbed on the surface of the sub-micro copper particles by hydrogen bonds or the like, or may react with the sub-micro copper particles and be bonded to the surface of the sub-micro copper particles. That is, the submicrocopper particles may have a compound derived from a specific surface treatment agent.
- the surface treatment agent is included in the organic compound contained in the copper paste for bonding.
- Examples of the surface treatment agent include organic acids having 2 to 18 carbon atoms.
- Examples of organic acids having 2 to 18 carbon atoms include acetic acid, propanoic acid, butanoic acid, pentanoic acid, hexanoic acid, heptanic acid, caprylic acid, methylheptanic acid, ethylhexanoic acid, propylpentanoic acid, pelargonic acid and methyloctane.
- Acid ethylheptanic acid, propylhexanoic acid, caprylic acid, methylnonanoic acid, ethyloctanoic acid, propylheptanic acid, butylhexanoic acid, undecanoic acid, methyldecanoic acid, ethylnonanoic acid, propyloctanoic acid, butylheptanic acid, lauric acid, methylundecane Acids, ethyldecanoic acid, propylnonanoic acid, butyloctanoic acid, pentylheptanic acid, tridecanoic acid, methyldodecanoic acid, ethylundecanoic acid, propyldecanoic acid, butylnonanoic acid, pentyloctanoic acid, myristic acid, methyltridecanoic acid, ethyldodecanoic acid , Caprylic acid
- organic acid one kind may be used alone, or two or more kinds may be used in combination.
- organic acid By combining such an organic acid with the above-mentioned sub-micro copper particles, there is a tendency that both the dispersibility of the sub-micro copper particles and the desorption of the organic acid at the time of sintering can be achieved at the same time.
- the treatment amount of the surface treatment agent is 0.07 to 2.10% by mass and 0.10 to 1.1 by mass based on the total mass of the submicro copper particles after the surface treatment from the viewpoint of the dispersibility of the submicro copper particles. It may be 60% by mass or 0.20 to 1.10% by mass.
- the treatment amount of the surface treatment agent may be 0.07% by mass or more, 0.10% by mass or more, or 0.20% by mass or more based on the total mass of the sub-micro copper particles after the surface treatment.
- the treatment amount of the surface treatment agent may be 2.10% by mass or less, 1.60% by mass or less, or 1.10% by mass or less based on the total mass of the sub-micro copper particles after the surface treatment.
- the treatment amount of the surface treatment agent may be an amount that adheres to the surface of the sub-micro copper particles in a single-layer to a triple-layer.
- This processing amount is measured by the following method.
- sub-micro copper particles commercially available ones can be used.
- examples of commercially available materials containing sub-micro copper particles include CH-0200 (manufactured by Mitsui Metal Mining Co., Ltd., volume average particle size 0.36 ⁇ m) and HT-14 (manufactured by Mitsui Metal Mining Co., Ltd., volume average grain size).
- the content of the sub-micro copper particles may be 30% by mass or more, 35% by mass or more, 40% by mass or more, or 50% by mass or more, based on the total mass of the copper particles contained in the bonding copper paste, 90% by mass or more. It may be 0% by mass or less or 85% by mass or less.
- the content of the sub-micro copper particles is 30 to 90% by mass, 35 to 90% by mass, 40 to 85% by mass, or 50 to 85% by mass based on the total mass of the copper particles contained in the bonding copper paste. May be.
- the content of the sub-micro copper particles is within the above range, it becomes easy to secure the bonding strength of the bonded body produced by sintering the bonding copper paste.
- the bonding copper paste is used for bonding microdevices, the microdevices tend to exhibit good die shear strength and connection reliability.
- the micro copper particles are copper particles having a particle size of 1 ⁇ m or more and less than 50 ⁇ m.
- the micro copper particles preferably contain copper particles having a particle size of 2.0 to 50 ⁇ m.
- the micro copper particles may contain 50% by mass or more of copper particles having a particle size of 2.0 to 50 ⁇ m, 70% by mass or more, 80% by mass or more, or 100% by mass. You may be.
- the volume average particle size of the micro copper particles is preferably 2.0 to 50 ⁇ m.
- the volume average particle diameter of the micro copper particles may be 2.0 to 20 ⁇ m, 2.0 to 10 ⁇ m, 3.0 to 20 ⁇ m, or 3.0 to 10 ⁇ m.
- the volume average particle size of the microcopper particles may be 2.0 ⁇ m or more or 3.0 ⁇ m or more.
- the volume average particle size of the microcopper particles may be 50 ⁇ m or less, 20 ⁇ m or less, or 10 ⁇ m or less.
- the shape of the micro copper particles is not particularly limited.
- Examples of the shape of the microcopper particles include a spherical shape, a lump shape, a needle shape, a flake shape, a substantially spherical shape, and an aggregate thereof.
- the preferred shape of the microcopper particles is flake-like.
- the micro-copper particles may contain flake-shaped micro-copper particles in an amount of 50% by mass or more, 70% by mass or more, 80% by mass or more, or 100% by mass.
- the micro copper particles in the bonding copper paste are oriented substantially parallel to the bonding surface, and the direction of the bonding surface when the bonding copper paste is sintered Volume shrinkage can be suppressed, and it becomes easy to secure the bonding strength of the bonded body produced by sintering the bonding copper paste.
- the bonding copper paste is used for bonding microdevices, the microdevices tend to exhibit good die shear strength and connection reliability.
- the aspect ratio of the flake-shaped microcopper particles is preferably 3.0 or more, more preferably 4.0 or more, still more preferably 6.0 or more. ..
- the maximum diameter and the average maximum diameter of the flake-shaped microcopper particles may be 2.0 to 50 ⁇ m, 3.0 to 50 ⁇ m, or 3.0 to 20 ⁇ m.
- the maximum diameter and the average maximum diameter of the flake-shaped microcopper particles can be obtained from, for example, an SEM image of the particles.
- the maximum diameter and the average maximum diameter of the flake-shaped microcopper particles are obtained as, for example, the major axis X and the average value Xav of the major axis of the flake-shaped microcopper particles.
- the major axis X is a parallel two plane selected so that the distance between the two parallel planes circumscribing the flake-shaped micro copper particles is maximized in the three-dimensional shape of the flake-shaped micro copper particles. The distance.
- the presence or absence of treatment with a surface treatment agent is not particularly limited.
- the microcopper particles may be treated with a surface treatment agent. That is, the microcopper particles may have a compound derived from the surface treatment agent.
- the surface treatment agent may be adsorbed on the surface of the microcopper particles by hydrogen bonds or the like, or may react with the microcopper particles and be bonded to the surface of the microcopper particles.
- the surface treatment agent may be one that is removed by heating at the time of joining.
- Examples of such surface treatment agents include aliphatic carboxylic acids such as dodecanoic acid, palmitic acid, heptadecanoic acid, stearic acid, arachidic acid, linoleic acid, linoleic acid, and oleic acid; terephthalic acid, pyromellitic acid, o-.
- Aromatic carboxylic acids such as phenoxybenzoic acid; fatty alcohols such as cetyl alcohol, stearyl alcohol, isobornylcyclohexanol, tetraethylene glycol; aromatic alcohols such as p-phenylphenol; octylamine, dodecylamine, stearylamine, etc. Alkylamine; aliphatic nitriles such as stearonitrile and decanenitrile; silane coupling agents such as alkylalkoxysilane; polymer-treated materials such as polyethylene glycol, polyvinyl alcohol, polyvinylpyrrolidone, and silicone oligomers.
- the surface treatment agent one type may be used alone, or two or more types may be used in combination.
- micro copper particles commercially available ones can be used.
- examples of commercially available materials containing micro copper particles include 1050YF (manufactured by Mitsui Metal Mining Co., Ltd., volume average particle size 1.7 ⁇ m) and MA-C025KFD (manufactured by Mitsui Metal Mining Co., Ltd., volume average particle size 7.
- 3L3 manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., volume average particle size 8.0 ⁇ m
- 2L3N manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., volume average particle size 9.9 ⁇ m
- 3L3N (Fukuda Metal Foil Powder Industry Co., Ltd.) Examples thereof include a volume average particle diameter of 7 ⁇ m manufactured by Mitsui Kinzoku Mining Co., Ltd. and a volume average particle diameter of 3.8 ⁇ m manufactured by Mitsui Metal Mining Co., Ltd.
- the content of the micro copper particles may be 10% by mass or more, 15% by mass or more, or 20% by mass or more, and 70% by mass or less, 50% by mass, based on the total mass of the copper particles contained in the bonding copper paste. % Or less, 45% by mass or less, or 40% by mass or less.
- the content of the micro copper particles is 10 to 70% by mass, 10 to 65% by mass, 10 to 50% by mass, 15 to 60% by mass, based on the total mass of the copper particles contained in the bonding copper paste. It may be 15 to 50% by mass, or 15 to 45% by mass.
- the content of the micro copper particles is within the above range, peeling of the joint portion (for example, a sintered body), generation of voids and cracks can be suppressed, and the joint strength can be ensured.
- the bonding copper paste is used for bonding microdevices, the microdevices tend to exhibit good die shear strength and connection reliability.
- the content of the flake-shaped micro-copper particles may be the same as the above-mentioned range of the content of the micro-copper particles. When the content of the flake-shaped microcopper particles is in such a range, the above effect tends to be further exerted.
- Examples of copper particles other than sub-micro copper particles and micro copper particles include copper nanoparticles.
- Copper nanoparticles refer to copper particles having a particle size of less than 0.01 ⁇ m.
- the surface of copper nanoparticles is generally coated with a carboxylic acid or amine (called a surface coating material). Copper nanoparticles have a larger specific surface area than copper microparticles, and the proportion of surface coating material per unit mass tends to increase. Therefore, since a large amount of surface coating material is desorbed during sintering (heating), the volume shrinkage during sintering tends to increase as compared with copper microparticles.
- the content of the copper nanoparticles is preferably 10% by mass or less, more preferably 5% by mass or less, and further preferably not contained, based on the total mass of the copper particles.
- the content of the copper particles in the bonding copper paste of the present embodiment may be 80 to 100% by mass, or 90 to 100% by mass, based on the total mass of the metal particles contained in the bonding copper paste. It may be 95 to 100% by mass.
- the bonding copper paste of the present embodiment contains sub-micro copper particles and micro-copper particles.
- the sub-micro copper particles and the micro copper particles are used in combination, volume shrinkage and sintering shrinkage due to drying are likely to be suppressed, and the copper paste for bonding is less likely to peel off from the bonding surface during sintering. That is, by using the sub-micro copper particles and the micro copper particles in combination, the volume shrinkage when the copper paste for bonding is sintered is suppressed, and the bonded body can have more sufficient bonding strength.
- the micro device tends to exhibit better die shear strength and connection reliability.
- the total content of the sub-micro copper particles and the content of the micro copper particles may be 80 to 100% by mass based on the total mass of the metal particles contained in the bonding copper paste.
- the total content of the sub-micro copper particles and the content of the micro copper particles is within the above range, the volume shrinkage when the bonding copper paste is sintered can be sufficiently reduced, and the bonding copper paste is sintered. It becomes easy to secure the bonding strength of the bonded body produced in the above.
- the bonding copper paste is used for bonding microdevices, the microdevices tend to exhibit good die shear strength and connection reliability.
- the total content of the sub-micro copper particles and the content of the micro copper particles may be 90% by mass or more, based on the total mass of the metal particles, and may be 95% by mass. It may be the above, or may be 100% by mass.
- the bonding copper paste of the present embodiment has submicro copper particles having a volume average particle diameter of 0.12 to 0.8 ⁇ m and flakes having a maximum diameter of 2 to 50 ⁇ m and an aspect ratio of 3.0 or more. May contain microcopper particles of. In this case, it is suitable for joining without pressure.
- the content of the sub-micro copper particles in the bonding copper paste is 30 to 90% by mass based on the total mass of the copper particles, and the content of the micro copper particles is the total mass of the copper particles. As a reference, it may be 10 to 70% by mass.
- the bonding copper paste of the present embodiment may contain metal particles other than copper particles (also referred to as "other metal particles").
- Examples of other metal particles include particles such as zinc, nickel, silver, gold, palladium, and platinum.
- the volume average particle diameter of the other metal particles may be 0.01 to 10 ⁇ m, 0.01 to 5 ⁇ m, or 0.05 to 3 ⁇ m.
- the shapes of the other metal particles are not particularly limited.
- the content of the other metal particles may be less than 20% by mass and 10% by mass or less based on the total mass of the metal particles contained in the bonding copper paste from the viewpoint of obtaining sufficient bondability. It may be 5% by mass or less, 1% by mass or less, or 0% by mass.
- the content of the metal particles in the bonding copper paste of the present embodiment may be 85 to 98% by mass, 85 to 95% by mass, or 85 to 90% based on the total amount of the bonding copper paste. It may be mass%, or may be 87-89 mass%.
- the dispersion medium is not particularly limited as long as it has a function of dispersing metal particles, and may be volatile.
- volatile dispersion medium include alcohols such as monohydric alcohols and polyhydric alcohols, ethers, esters, acid amides, aliphatic hydrocarbons, aromatic hydrocarbons and the like. Specifically, alcohols such as cyclohexanol, ethylene glycol, diethylene glycol, propylene glycol, butylene glycol, ⁇ -terpineol ( ⁇ -terpineol), dihydroterpineol (dihydroterpineol); diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol.
- Dibutyl ether diethylene glycol butyl methyl ether, diethylene glycol isopropyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, propylene glycol dimethyl ether, propylene glycol diethyl ether, propylene glycol dibutyl ether, propylene glycol dipropyl ether, tripropylene glycol dimethyl ether, etc.
- esters such as ethylene glycol ethyl ether acetate, ethylene glycol butyl ether acetate, diethylene glycol ethyl ether acetate, diethylene glycol butyl ether acetate, dipropylene glycol methyl ether acetate (DPMA), ethyl lactate, butyl lactate, ⁇ -butyrolactone, propylene carbonate, etc.
- Acid amides such as N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide; aliphatic hydrocarbons such as cyclohexane, octane, nonane, decane, undecane; benzene, toluene, xylene, etc. Examples include aromatic hydrocarbons.
- the copper paste for bonding of the present embodiment contains dihydroterpineol as a dispersion medium from the viewpoint of achieving both printability and bonding property.
- the content of the dispersion medium may be 2% by mass or more, 5% by mass or more or 10% by mass or more, based on the total mass of the bonding copper paste, and is 50% by mass or less, 30% by mass or less, 20% by mass. It may be less than or equal to 15% by mass or less.
- the content of the dispersion medium may be 2 to 50% by mass, 5 to 30% by mass, or 5 to 20% by mass based on the total mass of the bonding copper paste.
- the content of the dispersion medium may be 2 to 50 parts by mass, may be 5 to 50 parts by mass, and 2 to 15 parts by mass, with the total mass of the metal particles contained in the bonding copper paste as 100 parts by mass.
- the bonding copper paste can be adjusted to a more appropriate viscosity, and the sintering of copper particles is less likely to be hindered.
- the content of dihydroterpineol in the bonding copper paste of the present embodiment may be 50 to 100% by mass, 50 to 90% by mass, or 60 to 80% based on the total mass of the dispersion medium. It may be 100% by mass or 100% by mass.
- the bonding copper paste preferably contains a compound having a boiling point of 300 ° C. or higher (hereinafter, may be referred to as a high boiling point dispersion medium) as a dispersion medium.
- a high boiling point dispersion medium By including the high boiling point dispersion medium, the copper paste for bonding is imparted with plasticity and adhesion until immediately before the start of sintering, and bonding without pressure is facilitated.
- the boiling point of the high boiling point dispersion medium is 300 to 450 ° C. from the viewpoint that it does not interfere with sintering and densification when the copper paste for bonding is sintered and is quickly evaporated and removed when the bonding temperature is reached. It may be 305 to 400 ° C., or 310 to 380 ° C.
- the boiling point refers to the temperature under atmospheric pressure (1 atm). ..
- a dispersion medium having a boiling point of less than 300 ° C. may be referred to as a low boiling point dispersion
- High boiling point dispersion media include isobornylcyclohexanol (MTPH, manufactured by Nippon Terpen Chemical Co., Ltd.), butyl stearate, Exepearl BS (manufactured by Kao Co., Ltd.), stearyl stearate, Exepearl SS (manufactured by Kao Co., Ltd.), stearer.
- MTPH isobornylcyclohexanol
- BS manufactured by Nippon Terpen Chemical Co., Ltd.
- stearyl stearate manufactured by Kao Co., Ltd.
- stearer manufactured by Kao Co., Ltd.
- the high boiling point dispersion medium contains at least one selected from the group consisting of isobornylcyclohexanol, tributyrin, butyl stearate and octyl octanate. ..
- the content of the high boiling point dispersion medium may be 2% by mass or more, 2.2% by mass or more or 2.4% by mass or more, and 50% by mass or less, 45% by mass, based on the total mass of the bonding copper paste. % Or less, 40% by mass or less, 20% by mass or less, 10% by mass or less, or 5% by mass or less.
- the content of the compound having a boiling point of 300 ° C. or higher may be 2 to 50% by mass, 2 to 20% by mass, or 2 to 5% by mass, based on the total mass of the copper paste for bonding. May be%.
- the content of the high boiling point dispersion medium may be 10 to 50% by mass, 20 to 40% by mass, or 25 to 35% by mass based on the total mass of the dispersion medium. ..
- the bonding copper paste is an additive such as a nonionic surfactant, a fluorine-based surfactant and other wetting improver; a surface tension adjuster; a dispersant such as an alkylamine and an alkylcarboxylic acid; and a defoaming agent such as silicone oil.
- An ion trapping agent such as an inorganic ion exchanger; a saturated higher alcohol or the like can be contained.
- the content of the additive can be appropriately adjusted as long as the effect of the present invention is not impaired.
- the viscosity of the copper paste for bonding described above is not particularly limited, but the viscosity at 25 ° C. may be 100 to 250 Pa ⁇ s from the viewpoint of conformity with methods such as screen printing, particularly printing conditions of an automatic printing machine. It may be 100 to 200 Pa ⁇ s, and may be 100 to 170 Pa ⁇ s.
- the viscosity of the bonding copper paste can be measured based on the solder paste viscosity measuring method (JIS Z 3284-1: 2014) standardized by JIS, and the above viscosity can be measured with the viscometer TV-33 (Toki Sangyo). (Product name, manufactured by Co., Ltd.) and the value when measured using an SPP rotor as a measuring tool under the conditions of a rotation speed of 2.5 rpm and a measurement time of 144 seconds are shown.
- JIS Z 3284-1: 2014 solder paste viscosity measuring method
- TV-33 Toki Sangyo
- the bonding copper paste of the present embodiment printability can be improved while maintaining sufficient bonding properties. Therefore, according to the copper paste for bonding of the present embodiment, the bonded body can be efficiently manufactured by a mass production process using an automatic printing machine such as a screen printing machine. Further, the bonding copper paste of the present embodiment may be used for non-pressurizing bonding.
- the copper paste for bonding can be prepared by mixing the above-mentioned copper particles, a dispersion medium, and other metal particles and additives contained in some cases. After mixing each component, stirring treatment may be performed.
- the maximum particle size of the dispersion liquid may be adjusted by a classification operation. At this time, the maximum particle size of the dispersion liquid can be 20 ⁇ m or less, and can be 10 ⁇ m or less.
- the metal particles such as the sub-micro copper particles, those treated with a surface treatment agent may be used.
- the bonding copper paste may be prepared by, for example, the following method. First, a dispersant is added to the dispersion medium as needed, and then the submicrocopper particles are mixed and the dispersion treatment is performed. Next, microcopper particles and, if necessary, other metal particles are added to carry out a dispersion treatment.
- the dispersion method and dispersion conditions suitable for dispersion may differ between the sub-micro copper particles and the micro copper particles. In general, sub-micro copper particles are more difficult to disperse than micro-copper particles, and in order to disperse the sub-micro-copper particles, a strength higher than the strength applied when the micro-copper particles are dispersed is required.
- the microcopper particles are not only easy to disperse, but may be deformed when high strength is applied to disperse them. Therefore, by performing the procedure as described above, good dispersibility can be easily obtained, and the performance of the bonding copper paste can be further improved.
- the dispersion treatment can be performed using a disperser or a stirrer.
- Dispersers and stirrers include, for example, Ishikawa stirrer, Silberson stirrer, cavitation stirrer, rotation / revolution type stirrer, ultra-thin high-speed rotary disperser, ultrasonic disperser, Raikai machine, twin-screw kneader, bead mill, ball mill. , Three-roll mill, homomixer, planetary mixer, ultra-high pressure type disperser and thin layer shear disperser.
- the classification operation can be performed by, for example, filtration, natural sedimentation and centrifugation.
- the filter for filtration include a water comb, a metal mesh, a metal filter and a nylon mesh.
- the stirring process can be performed using a stirrer.
- the stirrer include an Ishikawa type stirrer, a rotation / revolution type stirrer, a Raikai machine, a twin-screw kneader, a three-roll mill and a planetary mixer.
- the method for manufacturing a joined body of the present embodiment is a method for manufacturing a joined body including a first member, a second member, and a joint portion for joining the first member and the second member.
- the bonding copper paste of the present embodiment is printed on at least one bonding surface of the first member and the second member, and the first member, the bonding copper paste, and the second member are laminated in this order. It includes a first step of preparing a laminated body having a laminated structure and a second step of sintering a copper paste for joining the laminated body.
- first member and the second member include semiconductor elements such as IGBTs, diodes, Schottky barrier diodes, MOS-FETs, thyristors, logics, sensors, analog integrated circuits, LEDs, semiconductor lasers, and transmitters; leads. Frame; Ceramic substrate with metal plate attached (for example, DBC); Base material for mounting semiconductor elements such as LED packages; Metal wiring such as copper ribbon and metal frame; Block body such as metal block; Power supply member such as terminals; Heat dissipation plate; Examples include a water cooling plate.
- semiconductor elements such as IGBTs, diodes, Schottky barrier diodes, MOS-FETs, thyristors, logics, sensors, analog integrated circuits, LEDs, semiconductor lasers, and transmitters
- leads Frame
- Ceramic substrate with metal plate attached for example, DBC
- Base material for mounting semiconductor elements such as LED packages
- Metal wiring such as copper ribbon and metal frame
- Block body such as metal block
- Power supply member such as terminals
- the surface of the first member and the second member in contact with the sintered body of the copper paste for joining may contain metal.
- the metal include copper, nickel, silver, gold, palladium, platinum, lead, tin, cobalt and the like.
- the metal one type may be used alone, or two or more types may be used in combination.
- the surface in contact with the sintered body may be an alloy containing the above metal.
- the metal used for the alloy include zinc, manganese, aluminum, beryllium, titanium, chromium, iron, molybdenum and the like in addition to the above metals.
- a member having various metal plating chip having metal plating, lead frame having various metal plating, etc.
- a wire, a heat spreader, and a metal plate are attached.
- Examples thereof include a ceramic substrate, a lead frame made of various metals, a copper plate, and a copper foil.
- Examples of the method for printing the bonding copper paste of the present embodiment on the bonding surface of the member include screen printing (stencil printing), transfer printing, offset printing, letterpress printing, recess printing, gravure printing, stencil printing, jet printing, and the like. Will be printed.
- a method using a dispenser for example, a jet dispenser, a needle dispenser
- a method by soft lithography, particle deposition may be used.
- the thickness of the bonding copper paste may be 1 ⁇ m or more, 5 ⁇ m or more, 10 ⁇ m or more, 15 ⁇ m or more, 20 ⁇ m or more or 50 ⁇ m or more, and is 3000 ⁇ m or less, 1000 ⁇ m or less, 500 ⁇ m or less, 300 ⁇ m or less, 250 ⁇ m or less or 150 ⁇ m or less. You can do it.
- the thickness of the bonding copper paste may be 1 to 1000 ⁇ m, 10 to 500 ⁇ m, 50 to 200 ⁇ m, 10 to 3000 ⁇ m, or 15 to 500 ⁇ m. It may be 20 to 300 ⁇ m, 5 to 500 ⁇ m, 10 to 250 ⁇ m, or 15 to 150 ⁇ m.
- the copper paste for bonding of the present embodiment can be printed by screen printing, and it is possible to improve the printing speed, expand the area of the mask opening, and the like.
- the opening area of the mask may be, for example, 4 mm 2 or more, 9 mm 2 or more, 25 mm 2 or more, 49 mm 2 or more, 100 mm 2 or more. May be good.
- FIG. 1 is a schematic diagram for explaining screen printing.
- the bonding copper of the present embodiment is shown on the first member 30 arranged on the stage 35 by using the mask 32 and the screen printing machine provided with the squeegee 36.
- a series of processes when printing the paste 34 is shown. In this process, two squeegees are used for reciprocating printing. First, the paste 34 is supplied to one end of the mask 32 ((a) in FIG. 1). Next, one of the squeegees 36 is pressed against the mask 32 with a predetermined printing pressure and moved in one direction to print (coat) the paste 34 on the opening of the mask 32 ((b) in FIG. 1).
- the paste may be supplied to the end of the coat.
- the paste 34 is printed (printed) by moving the other squeegee 36 in the opposite direction while pressing the other squeegee 36 at the end position of the coat with a predetermined printing pressure (FIG. 1 (c)).
- the first member 30 is removed from the mask 32, and printing is completed ((d) in FIG. 1.
- the bonding copper paste 38 having a predetermined shape is printed on the first member 30.
- the printing pressure can be, for example, 0.01 to 0.3 MPa.
- the printing speed can be adjusted, for example, in the range of 15 to 300 mm / s.
- the paste is filled in the opening of the mask with the scraper, and the paste filled with the squeegee is transferred onto the member for printing. Good.
- the copper paste for joining printed on the member may be appropriately dried from the viewpoint of suppressing flow and generation of voids during sintering.
- the gas atmosphere at the time of drying may be in the atmosphere, in an oxygen-free atmosphere such as nitrogen or rare gas, or in a reducing atmosphere such as hydrogen or formic acid.
- the drying method may be drying by leaving at room temperature (for example, 10 to 30 ° C.), heating drying, or vacuum drying.
- heat drying or vacuum drying for example, a hot plate, a hot air dryer, a hot air heating furnace, a nitrogen dryer, an infrared dryer, an infrared heating furnace, a far infrared heating furnace, a microwave heating device, a laser heating device, an electromagnetic wave.
- a heating device a heater heating device, a steam heating furnace, a hot plate pressing device, or the like can be used.
- the drying temperature and time may be appropriately adjusted according to the type and amount of the volatile components used (for example, monohydric aliphatic alcohol and solvent component).
- the drying conditions may be, for example, conditions for drying at 50 to 180 ° C. for 1 to 120 minutes.
- the laminate can be obtained by arranging one member on the other member.
- Specific methods for example, a method of arranging the first member on the second member on which the copper paste for joining is printed
- the copper paste for bonding can be sintered by heat-treating the laminate.
- a sintered body to be a joint can be obtained.
- heat treatment for example, a hot plate, a hot air dryer, a hot air heating furnace, a nitrogen dryer, an infrared dryer, an infrared heating furnace, a far infrared heating furnace, a microwave heating device, a laser heating device, an electromagnetic heating device, etc.
- a heater heating device, a steam heating furnace, or the like can be used.
- the gas atmosphere at the time of sintering may be an oxygen-free atmosphere from the viewpoint of suppressing oxidation of the sintered body and the members (for example, the first member and the second member).
- the gas atmosphere at the time of sintering may be a reducing atmosphere from the viewpoint of removing surface oxides of copper particles in the copper paste for bonding.
- the anoxic atmosphere include an anoxic gas atmosphere such as nitrogen and a rare gas, or a vacuum.
- Examples of the reducing atmosphere include a pure hydrogen gas atmosphere, a mixed gas atmosphere of hydrogen and nitrogen typified by forming gas, a nitrogen atmosphere containing formic acid gas, a mixed gas atmosphere of hydrogen and rare gas, a rare gas atmosphere containing formic acid gas, and the like. Can be mentioned.
- the temperature during the heat treatment (for example, the maximum temperature reached) is 170 ° C. or higher and 190 ° C. from the viewpoint of reducing thermal damage to the members (for example, the first member and the second member) and improving the yield. It may be more than or equal to 200 ° C. or higher, and may be 250 ° C. or lower, lower than 250 ° C., 225 ° C. or lower, or lower than 225 ° C.
- the maximum temperature reached may be 170 to 250 ° C., 170 ° C. or higher and lower than 250 ° C., 190 to 225 ° C., or 190 ° C. or higher and lower than 225 ° C. , 200 to 225 ° C., and may be 200 ° C. or higher and lower than 225 ° C.
- the bonding copper paste may be heated without pressure and sintered. That is, a state in which only the weight of the member (for example, the first member) laminated on the copper paste for bonding is applied, or in addition to the weight of the laminated member, a pressure of 0.01 MPa or less, preferably 0.005 MPa or less is applied.
- the laminate can be sintered with, and even in such a case, sufficient bonding strength can be obtained.
- the pressure received during sintering is within the above range, void reduction, die shear strength and connection reliability can be further improved without impairing the yield because a special pressurizing device is not required.
- Examples of the method in which the bonding copper paste receives a pressure of 0.01 MPa or less include a method in which a weight is placed on a member (for example, a first member) arranged on the upper side in the vertical direction.
- FIG. 2 is a schematic cross-sectional view showing an example of a bonded body manufactured by using the bonding copper paste of the present embodiment.
- the joint body 100 shown in FIG. 2 includes a first member 2, a second member 3, and a joint portion 1 for joining the first member 2 and the second member 3, and the joint portion 1 is described above. It consists of a sintered body of copper paste for joining.
- the above-mentioned ones can be mentioned.
- a bonded body having sufficient bonding strength can be efficiently produced even by a mass production process using an automatic printing machine such as a screen printing machine.
- the die shear strength of the bonded body 100 may be 15 MPa or more, 20 MPa or more, or 25 MPa or more from the viewpoint of sufficiently joining the first member 2 and the second member 3. It may be 30 MPa or more.
- the die-share strength can be measured using a universal bond tester (Royce 650, manufactured by Royce Instruments), a universal bond tester (4000 series, manufactured by DAGE), or the like.
- the thermal conductivity of the sintered body 1 of the copper paste for bonding may be 100 W / (m ⁇ K) or more, and 120 W / (m ⁇ K) or more from the viewpoint of heat dissipation and connection reliability at high temperatures. It may be 150 W / (m ⁇ K) or more.
- the thermal conductivity can be calculated from the thermal diffusivity, specific heat capacity, and density of the sintered body of the copper paste for bonding.
- the joint body 100 when the first member 2 is a semiconductor element, the joint body 100 is a semiconductor device.
- the obtained semiconductor device can have sufficient die shear strength and connection reliability.
- FIG. 3 is a schematic cross-sectional view showing an example of a semiconductor device manufactured by using the bonding copper paste of the present embodiment.
- the semiconductor device 110 shown in FIG. 3 is on the lead frame 15a via the sintered body 11, the lead frame 15a, the lead frame 15b, the wire 16, and the sintered body 11 of the copper paste for bonding according to the present embodiment.
- a semiconductor element 18 connected to the above and a mold resin 17 for molding the semiconductor elements 18 are provided.
- the semiconductor element 18 is connected to the lead frame 15b via the wire 16.
- Examples of the semiconductor device according to the present embodiment include power modules such as diodes, rectifiers, thyristors, MOS gate drivers, power switches, power MOSFETs, IGBTs, shotkey diodes, and fast recovery diodes; transmitters; amplifiers; high-brightness LEDs.
- Power modules such as diodes, rectifiers, thyristors, MOS gate drivers, power switches, power MOSFETs, IGBTs, shotkey diodes, and fast recovery diodes; transmitters; amplifiers; high-brightness LEDs.
- Modules Sensors and the like.
- FIG. 4 is a schematic cross-sectional view for explaining a method of manufacturing the bonded body 100.
- the bonding copper paste 10 and the first member 3 are placed in this order on the side in which the weight of the first member 2 and the first member 2 acts.
- the first step of preparing the laminated body 50 (FIG. 4A) and the state in which the bonding copper paste 10 receives the weight of the first member 2, or the weight of the first member 2. It also includes a second step of sintering at a predetermined temperature under a pressure of 0.01 MPa or less. As a result, the bonded body 100 is obtained (FIG. 4 (b)).
- the direction in which the weight of the first member 2 works can also be said to be the direction in which gravity works.
- the first step and the second step according to the present embodiment can be carried out in the same manner as the first step and the second step described above.
- the semiconductor device 110 can be manufactured in the same manner as the manufacturing method of the bonded body 100 described above. That is, in the method of manufacturing a semiconductor device, a semiconductor element is used for at least one of a first member and a second member, and the bonding copper is placed on the side in the direction in which the weight of the first member and the first member works. Prepare a laminate in which the paste and the second member are laminated in this order, and apply the bonding copper paste in a state of receiving the weight of the first member, or the weight of the first member and 0.01 MPa or less. It is provided with a step of sintering at a predetermined temperature under the pressure of.
- the laminate 60 is heated and the bonding copper paste 20 is sintered to obtain the bonded body 105 (FIG. 5 (b)).
- the lead frame 15b and the semiconductor element 18 in the obtained bonded body 105 are connected by a wire 16 and sealed with a sealing resin.
- the semiconductor device 110 is obtained by the above steps (FIG. 5 (c)).
- the obtained semiconductor device 110 can have sufficient die shear strength and connection reliability even when bonding is performed without pressurization.
- the semiconductor device of the present embodiment has sufficient bonding strength, and by providing a sintered body of a copper paste for bonding containing copper having a high thermal conductivity and a high melting point, it has sufficient die shear strength and connection reliability. It can be excellent in power cycle resistance as well as excellent in power cycle resistance. Further, by using the bonding copper paste of the present embodiment having excellent printability and bonding property, the above-mentioned semiconductor device can be efficiently manufactured.
- a bonded body and a semiconductor device manufactured by using the bonding copper paste of the present embodiment has been described above, but the bonded body and the semiconductor device manufactured by using the bonding copper paste of the present embodiment are described above. It is not limited to the form.
- the bonded body produced by using the bonding copper paste of the present embodiment may be, for example, the bonded body shown in FIGS. 6 and 8.
- the bonded body 120 shown in FIG. 6 includes a first member 2, a second member 3, a third member 4, a fourth member 5, and a first member 2 and a second member 3.
- such a bonded body 120 is on the side in the direction in which the weight of the third member 4 and the third member 4 acts.
- a laminated body 70 having a third bonding copper paste 10c and a laminated portion in which the fourth member 5 is laminated in this order is prepared on the side in the direction in which the weight of the member 4 works (FIG. 7 (a)).
- the first bonding copper paste 10a, the second bonding copper paste 10b, and the third bonding copper paste 10c are the bonding copper paste according to the present embodiment, and the first bonding copper paste.
- the sintered body 1a is obtained by sintering 10a
- the sintered body 1b is obtained by sintering the second bonding copper paste 10b
- the third bonding copper paste 10c is sintered. 1c obtained a sintered body.
- the third member 4 for example, after obtaining the bonded body 100, the third member 4, the second bonding copper paste 10b, and the second bonding body 120 are placed in the direction in which the weight of the third member 4 acts.
- a method comprising a step of forming a laminated portion laminated in this order and sintering a second bonding copper paste 10b and a third bonding copper paste 10c in the same manner as in the method for producing the bonded body 100. You can also get it at.
- the joined body 130 shown in FIG. 8 includes a first member 2, a second member 3, a third member 4, a fourth member 5, a fifth member 6, and a first member 2.
- the joint portion) 1c, the sintered body (joint portion) 1d of the copper paste for joining the first member 2 and the fifth member 6, and the third member 4 and the fifth member 6 are attached to each other.
- a sintered body (joint portion) 1e of the copper paste for joining is provided.
- such a joint 130 is, for example, on the side in the direction in which the weight of the third member 4 and the third member 4 acts.
- the fifth bonding copper paste 10e, the fifth member 6, the fourth bonding copper paste 10d, the first member 2, the first bonding copper paste 10a, and the second member 3 are laminated in this order.
- a laminate 80 having the above is prepared (FIG.
- the first bonding metal paste 10a, the third bonding copper paste 10c, and the fourth bonding body 100 are prepared in the same manner as in the manufacturing method of the bonded body 100. It can be obtained by a method including a step of sintering the bonding copper paste 10d and the fifth bonding copper paste 10e (FIG. 9 (b)).
- the first bonding copper paste 10a, the third bonding copper paste 10c, the fourth bonding copper paste 10d, and the fifth bonding copper paste 10e are the bonding copper pastes according to the present embodiment.
- the first bonding copper paste 10a is sintered to obtain a sintered body 1a
- the third bonding copper paste 10c is sintered to obtain a sintered body 1c
- the fourth bonding is performed.
- a sintered body 1d is obtained by sintering the copper paste 10d for bonding
- a sintered body 1e is obtained by sintering the copper paste 10e for bonding fifth.
- the fifth member 4, the fifth member 6, and the fourth copper paste for joining are placed on the side in the direction in which the weight of the third member 4 works.
- a laminate in which 10d, the first member 2, the first bonding copper paste 10a, and the second member 3 are laminated in this order is prepared, and the first method is similar to the method for manufacturing the bonding body 100.
- the bonding copper paste 10a, the fourth bonding copper paste 10d, and the fifth bonding copper paste 10e are sintered, the third member 4 and the weight of the third member 4 are placed in the direction in which the weight acts.
- a laminated portion in which the third bonding copper paste 10c and the fourth member 5 are laminated in this order is formed, and the third bonding copper paste 10c is sintered in the same manner as in the manufacturing method of the bonded body 100. It can also be obtained by a method including a step of performing.
- the joint body 130 has a fifth bonding copper paste 10e and a fifth member on the side in the direction in which the weight of the third member 4 and the third member 4 works.
- the bonding copper paste 10c and the fourth member 5 are laminated in this order to form a laminated portion, and the third bonding copper paste 10c and the fourth member 5 are formed in the same manner as in the manufacturing method of the bonded body 100. It can also be obtained by a method including a step of sintering the bonding copper paste 10d and the fifth bonding copper paste 10e.
- the example of the third member 4, the fourth member 5, and the fifth member 6 is the same as the example of the second member 3.
- the surface of the third member 4, the fourth member 5, and the fifth member 6 in contact with the sintered body of the bonding copper paste may contain metal.
- the example of the metal that can be contained is the same as the example of the metal that can be contained in the surface where the first member and the second member are in contact with the sintered body of the copper paste for joining.
- the first bonding copper paste 10a, the second bonding copper paste 10b, the third bonding copper paste 10c, the fourth bonding copper paste 10d, and the fifth bonding copper paste used in the above modification are used.
- the 10e may be the same or different.
- Example 1 CH-0200 (manufactured by Mitsui Metal Mining Co., Ltd., product name, 50% volume average particle size: 0.3 ⁇ m) 60.7 parts by mass, dihydroterpineol (manufactured by Nippon Terupen Chemical Industries, Ltd.) as a material containing sub-micro copper particles ) 8.0 parts by mass, tributyrin (boiling point: 305 ° C, manufactured by Fuji Film Wako Pure Chemical Industries, Ltd.) 3.6 parts by mass, and Fineoxocol-180T (manufactured by Fuji Film Wako Pure Chemical Industries, Ltd.) 0.4
- the parts by mass were mixed with a stirrer manufactured by Shinky Co., Ltd. (trade name: "Awatori Rentaro ARE-310", the same applies hereinafter) at 2000 rpm for 1 minute. Then, the dispersion treatment was carried out 10 times with a 3-roll mill to obtain a mixture.
- 3L3N manufactured by Mitsui Metal Mining Co., Ltd., product name, 50% volume average particle size: 7 ⁇ m
- a part by mass was added to the container, and the mixture was mixed with a stirrer manufactured by Shinky Co., Ltd. under the conditions of 2000 rpm and 1 minute.
- the dispersion treatment was carried out 5 times with a 3-roll mill to obtain a copper paste for bonding.
- Example 2 Example 2 and reference example 1
- the solvent amount of the paste in Example 1 was reduced to adjust the metal particle concentration to 89% by mass.
- Reference Example 1 a copper paste for bonding was prepared in the same manner as in Example 1 except that the composition of the copper paste for bonding was changed to the composition shown in Table 1 (the unit of the numerical value is parts by mass).
- viscosity The viscosity of the copper paste for bonding conforms to the viscosity measurement method of solder paste (JIS Z 3284-1: 2014) standardized by JIS, and the viscometer TV-33 (manufactured by Toki Sangyo Co., Ltd., product name). Using an SPP rotor as a measuring tool, the measurement was performed under the conditions of a rotation speed of 2.5 rpm and a measurement time of 144 seconds.
- Printing was performed on a copper plate by a screen printing machine under the following conditions, and the printability was evaluated.
- the opening sizes were 3 mm ⁇ , 5 mm ⁇ , 7 mm ⁇ , and 10 mm ⁇ .
- a stainless steel metal mask (thickness: 200 ⁇ m) with openings for each print shape (3 mm ⁇ , 5 mm ⁇ , 7 mm ⁇ , and 10 mm ⁇ ) is placed on a copper plate, and stencil printing with a metal squeegee is used to print the outbound route: speed.
- the bonding copper paste was printed under the conditions of 150 mm / s, printing pressure 0.2 MPa, return path: 100 mm / s, printing pressure 0.1 MPa.
- a stainless steel metal mask (thickness: 200 ⁇ m) having openings of each print shape (3 mm ⁇ , 5 mm ⁇ , 7 mm ⁇ , and 10 mm ⁇ ) is placed on a copper plate, and stencil printing using a metal squeegee is performed.
- the bonding copper paste was printed under the conditions of a speed of 150 mm / s, a printing pressure of 0.2 MPa, a return path: 100 mm / s, and a printing pressure of 0.1 MPa.
- the Si chip on which the Ni layer was formed was placed on the printed copper paste, and dried at 60 ° C.
- the sample on which the chip was placed was set in a tube furnace (manufactured by Earl Deck Co., Ltd.), and argon gas was flowed at 3 L / min for 5 minutes to replace the sample.
- hydrogen gas was flowed at 500 mL / min, and the temperature was raised to the junction temperature in 30 minutes.
- the temperature was maintained at 225 ° C. for 60 minutes while flowing hydrogen gas, and then cooled to 200 ° C. for 15 minutes.
- the sample was forcibly cooled from the outside of the tube furnace by an air blow to bring the sample temperature to 60 ° C. or lower, and then the sample was taken out into the air.
- ⁇ Joined area ratio> The sample of the joint was analyzed by an ultrasonic flaw detector (Insight-300, manufactured by Insight Co., Ltd.) to obtain an ultrasonic flaw detector image (SAT image) of the joint.
- SAT image ultrasonic flaw detector image
- the obtained SAT image was binarized, and the joint area ratio (area%) with respect to the chip area was calculated.
- the joint area ratio was 99% or more for all opening sizes.
- the copper pastes for bonding in Examples 1 and 2 can be printed well with an opening size of 3 to 10 mm ⁇ under printing conditions assuming automatic printing, and achieve sufficient bondability. It was confirmed that it could be done.
- Dihydroterpineol is a single bond obtained by hydrogenating the double bond contained in the molecular structure of tarpineol.
- the molecular structure and properties are considered to be very similar to those of tarpineol, but the viscosity of the copper paste is increased. It can be said that it is an unexpected effect that it can be reduced and sufficient bondability can be obtained.
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Abstract
Description
本実施形態の接合用銅ペーストは、金属粒子と、分散媒とを含有し、金属粒子として銅粒子を含み、分散媒としてジヒドロターピネオールを含む。なお、本明細書では、便宜上、複数の銅粒子の集合も「銅粒子」と称する。銅粒子以外の金属粒子についても同様である。
銅粒子としては、サブマイクロ銅粒子、マイクロ銅粒子、及びこれら以外の銅粒子が挙げられる。
サブマイクロ銅粒子は、0.01μm以上1.00μm未満の粒径を有する銅粒子である。サブマイクロ銅粒子は、好ましくは、150℃以上300℃以下の温度範囲で焼結性を有する。サブマイクロ銅粒子は、粒径が0.01~0.80μmの銅粒子を含むことが好ましい。サブマイクロ銅粒子は、粒径が0.01~0.80μmの銅粒子を10質量%以上含んでいてよく、20質量%以上含んでいてもよく、30質量%以上含んでいてもよく、100質量%含んでいてもよい。銅粒子の粒径は、例えば、SEM像から算出することができる。銅粒子の粉末を、SEM用のカーボンテープ上にスパチュラで載せ、SEM用サンプルとする。このSEM用サンプルをSEM装置により5000倍で観察する。このSEM像の銅粒子に外接する四角形を画像処理ソフトにより作図し、その一辺をその粒子の粒径とする。
表面処理剤の処理量(質量%)=(W1-W2)/W1×100
マイクロ銅粒子は、1μm以上50μm未満の粒径を有する銅粒子である。マイクロ銅粒子は、粒径が2.0~50μmの銅粒子を含むことが好ましい。マイクロ銅粒子は、粒径が2.0~50μmの銅粒子を50質量%以上含んでいてよく、70質量%以上含んでいてもよく、80質量%以上含んでいてもよく、100質量%含んでいてもよい。
サブマイクロ銅粒子及びマイクロ銅粒子以外の銅粒子としては、銅ナノ粒子が挙げられる。銅ナノ粒子とは、0.01μm未満の粒径を有する銅粒子を指す。銅ナノ粒子は一般的に表面にカルボン酸やアミンで被覆(表面被覆材という)されている。銅ナノ粒子は銅マイクロ粒子に比べて比表面積が大きく、単位質量当たりに占める表面被覆材の割合が増加する傾向にある。そのため焼結時(加熱時)に脱離する表面被覆材が多くなるため、銅マイクロ粒子に比べて焼結時の体積収縮が増える傾向ある。体積収縮を少なくする観点から、銅ナノ粒子の含有量は、銅粒子の全質量を基準として、10質量%以下が好ましく、5質量%以下がより好ましく、含まないことがさらに好ましい。
本実施形態の接合用銅ペーストは、銅粒子以外の金属粒子(「その他の金属粒子」ともいう。)を含むことができる。
分散媒は、金属粒子を分散する機能を有するものであれば特に限定されるものではなく、揮発性のものであってもよい。揮発性の分散媒としては、例えば、1価アルコール、多価アルコール等のアルコール類、エーテル類、エステル類、酸アミド、脂肪族炭化水素、芳香族炭化水素等が挙げられる。具体的には、シクロヘキサノール、エチレングリコール、ジエチレングリコール、プロピレングリコール、ブチレングリコール、α-ターピネオール(α-テルピネオール)、ジヒドロターピネオール(ジヒドロテルピネーオール)等のアルコール類;ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、ジエチレングリコールブチルメチルエーテル、ジエチレングリコールイソプロピルメチルエーテル、トリエチレングリコールジメチルエーテル、トリエチレングリコールブチルメチルエーテル、プロピレングリコールジメチルエーテル、プロピレングリコールジエチルエーテル、プロピレングリコールジブチルエーテル、プロピレングリコールジプロピルエーテル、トリプロピレングリコールジメチルエーテル等のエーテル類;エチレングリコールエチルエーテルアセテート、エチレングリコールブチルエーテルアセテート、ジエチレングリコールエチルエーテルアセテート、ジエチレングリコールブチルエーテルアセテート、ジプロピレングリコールメチルエーテルアセテート(DPMA)、乳酸エチル、乳酸ブチル、γ-ブチロラクトン、炭酸プロピレン等のエステル類;N-メチル-2-ピロリドン、N,N-ジメチルアセトアミド、N,N-ジメチルホルムアミド等の酸アミド;シクロヘキサン、オクタン、ノナン、デカン、ウンデカン等の脂肪族炭化水素;ベンゼン、トルエン、キシレン等の芳香族炭化水素などが挙げられる。
接合用銅ペーストは、添加剤として、ノニオン系界面活性剤、フッ素系界面活性剤等の濡れ向上剤;表面張力調整剤;アルキルアミン、アルキルカルボン酸等の分散剤;シリコーン油等の消泡剤;無機イオン交換体等のイオントラップ剤;飽和高級アルコールなどを含有することができる。添加剤の含有量は、本発明の効果を阻害しない範囲で適宜調整することができる。
接合用銅ペーストは、上述の銅粒子と、分散媒と、場合により含有されるその他の金属粒子及び添加剤とを混合して調製することができる。各成分の混合後に、撹拌処理を行ってもよい。接合用銅ペーストは、分級操作により分散液の最大粒径を調整してもよい。このとき、分散液の最大粒径は20μm以下とすることができ、10μm以下とすることもできる。上記サブマイクロ銅粒子等の金属粒子は、表面処理剤で処理されたものを用いてよい。
本実施形態の接合体の製造方法は、第1の部材と、第2の部材と、第1の部材及び第2の部材を接合する接合部と、を備える接合体の製造方法であって、第1の部材及び第2の部材の少なくとも一方の接合面に本実施形態の接合用銅ペーストを印刷し、第1の部材、接合用銅ペースト、及び第2の部材がこの順に積層されている積層構造を有する積層体を用意する第1の工程と、積層体の接合用銅ペーストを焼結する第2の工程と、を備える。
(実施例1)
サブマイクロ銅粒子を含む材料としてCH-0200(三井金属鉱業(株)製、製品名、50%体積平均粒径:0.3μm)60.7質量部、ジヒドロターピネオール(日本テルペン化学(株)製)8.0質量部、トリブチリン(沸点:305℃、富士フィルム和光純薬(株)製)3.6質量部、及びファインオキソコール-180T(富士フィルム和光純薬(株)製)0.4質量部を、2000rpm、1分間の条件で株式会社シンキー製攪拌機(商品名:「あわとり練太郎 ARE-310」、以下同様。)にて混合した。その後、3本ロールミルで10回分散処理を行い、混合物を得た。
実施例2は、実施例1におけるペーストの溶媒量を減らして、金属粒子濃度を89質量%に調整した。参考例1は、接合用銅ペーストの組成を表1に示す組成(数値の単位は質量部)に変更したこと以外は、実施例1と同様にして接合用銅ペーストを調製した。
上記で得られた接合用銅ペーストについて、下記の方法に従って、粘度、印刷性、及び接合性の評価を行った。粘度の結果を表1に示す。
接合用銅ペーストの粘度は、JISで規格されているソルダーペーストの粘度測定方法(JIS Z 3284-1:2014)に準拠し、粘度計TV-33(東機産業(株)製、製品名)と、測定用冶具としてSPPローターを用い、回転数2.5rpm、計測時間144秒の条件で測定した。
銅板上に、下記の条件でスクリーン印刷機による印刷を行い、印刷性を評価した。なお、開口サイズは、3mm□、5mm□、7mm□、及び10mm□とした。
接合用銅ペーストの接合性を、下記の方法で作製した接合体の接合面積率(%)により評価した。
銅板上に、各印刷形状(3mm□、5mm□、7mm□、及び10mm□)の開口を有するステンレス製のメタルマスク(厚さ:200μm)を載せ、メタルスキージを用いたステンシル印刷により、往路:速度150mm/s、印圧0.2MPa、復路:100mm/s、印圧0.1MPaの条件で接合用銅ペーストを印刷した。印刷した銅ペーストに、Ni層が形成されたSiチップを載せ、ホットプレート(アズワン製、製品名「EC-1200N」)を用い、60℃にて5分間又は10分間の乾燥を行った。次に、チップを載せたサンプルをチューブ炉(株式会社アールデック製)にセットし、アルゴンガスを3L/min、5分間流して置換した。その後、水素ガスを500mL/minで流し、30分間で接合温度まで昇温した。昇温後、水素ガスを流しながら225℃で60分保持した後、200℃まで15分間かけて冷却した。最後にアルゴンガスを0.3L/minで流しながら、チューブ炉の外側からエアブローで強制冷却してサンプル温度が60℃以下になってから、サンプルを空気中に取り出した。
接合体のサンプルについて、超音波探傷装置(インサイト(株)製、Insight-300)により分析し、接合部の超音波探傷像(SAT像)を得た。得られたSAT像を二値化処理し、チップ面積に対する接合面積率(area%)を算出した。
(銅粒子)
サブマイクロ銅粒子A:CH-0200(三井金属鉱業(株)製、製品名、50%体積平均粒径:0.3μm)
マイクロ銅粒子A:3L3N(福田金属箔粉工業(株)製、製品名、50%体積平均粒径:7μm)
(その他の金属粒子)
亜鉛粒子A:Zinc powder(Alfa Aesar社製、製品名、50%体積平均粒径:4μm)
(分散媒)
ジヒドロターピネオール:日本テルペン化学(株)製、製品名、沸点208℃
ターピネオールC:日本テルペン化学(株)製、製品名、沸点220℃
トリブチリン:富士フィルム和光純薬(株)製、製品名、沸点305℃
(添加剤)
添加剤A:ファインオキソコール-180T(富士フィルム和光純薬(株)製、イソオクタデカノール)
Claims (15)
- 金属粒子と、分散媒と、を含有し、
前記金属粒子として、銅粒子を含み、
前記分散媒として、ジヒドロターピネオールを含む、接合用銅ペースト。 - 前記金属粒子の含有量が、接合用銅ペースト全量を基準として、85~98質量%である、請求項1に記載の接合用銅ペースト。
- 前記分散媒として、沸点が300℃以上である化合物を更に含む、請求項1又は2に記載の接合用銅ペースト。
- 25℃における粘度が100~200Pa・sである、請求項1~3のいずれか一項に記載の接合用銅ペースト。
- 前記銅粒子の含有量が、前記金属粒子の全質量を基準として、80~100質量%である、請求項1~4のいずれか一項に記載の接合用銅ペースト。
- スクリーン印刷用である、請求項1~5のいずれか一項に記載の接合用銅ペースト。
- 前記銅粒子として、体積平均粒径が0.12~0.8μmであるサブマイクロ銅粒子と、最大径が2~50μmであり、アスペクト比が3.0以上であるフレーク状のマイクロ銅粒子と、を含む、請求項1~6のいずれか一項に記載の接合用銅ペースト。
- 前記サブマイクロ銅粒子の含有量は、前記銅粒子の全質量を基準として、30~90質量%であり、
前記マイクロ銅粒子の含有量は、前記銅粒子の全質量を基準として、10~70質量%である、請求項7に記載の接合用銅ペースト。 - 無加圧接合用である、請求項1~8のいずれか一項に記載の接合用銅ペースト。
- 第1の部材と、第2の部材と、前記第1の部材及び前記第2の部材を接合する接合部と、を備える接合体の製造方法であって、
前記第1の部材及び前記第2の部材の少なくとも一方の接合面に請求項1~8のいずれか一項に記載の接合用銅ペーストを印刷し、前記第1の部材、前記接合用銅ペースト、及び前記第2の部材がこの順に積層されている積層構造を有する積層体を用意する第1の工程と、
前記積層体の前記接合用銅ペーストを焼結する第2の工程と、
を備える、接合体の製造方法。 - 前記印刷がスクリーン印刷である、請求項10に記載の接合体の製造方法。
- 前記第2の工程において、前記接合用銅ペーストを無加圧で加熱して焼結する、請求項10又は11に記載の接合体の製造方法。
- 前記第1の部材及び前記第2の部材の少なくとも一方が半導体素子である、請求項10~12のいずれか一項に記載の接合体の製造方法。
- 第1の部材、第2の部材、及び、第1の部材と第2の部材とを接合する接合部、を備え、
前記接合部が、請求項1~8のいずれか一項に記載の接合用銅ペーストの焼結体からなる、接合体。 - 前記第1の部材及び前記第2の部材の少なくとも一方が半導体素子である、請求項14に記載の接合体。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS506081B1 (ja) | 1970-12-09 | 1975-03-11 | ||
JP2014167145A (ja) | 2013-02-28 | 2014-09-11 | Osaka Univ | 接合材 |
WO2016132814A1 (ja) * | 2015-02-19 | 2016-08-25 | 綜研化学株式会社 | 焼成ペースト用樹脂組成物および焼成ペースト |
JP2018152176A (ja) * | 2017-03-10 | 2018-09-27 | 日立化成株式会社 | 接合用銅ペースト及び半導体装置 |
JP6563618B1 (ja) * | 2019-01-11 | 2019-08-21 | Jx金属株式会社 | 導電性塗布材料 |
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CN107949447B (zh) * | 2015-09-07 | 2020-03-03 | 日立化成株式会社 | 接合用铜糊料、接合体的制造方法及半导体装置的制造方法 |
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EP3450053A4 (en) * | 2016-04-28 | 2019-12-25 | Hitachi Chemical Company, Ltd. | BINDING COPPER PULP, METHOD FOR MANUFACTURING BOUND BODY, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
CN110167695A (zh) * | 2017-01-11 | 2019-08-23 | 日立化成株式会社 | 无加压接合用铜糊料、接合体及半导体装置 |
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EP3597330A4 (en) * | 2017-03-15 | 2020-11-25 | Hitachi Chemical Company, Ltd. | METAL PASTE FOR BONDING, BONDED BODY AS WELL AS A METHOD FOR MANUFACTURING THE SAME, AND A SEMICONDUCTOR DEVICE AS WELL AS A METHOD FOR MANUFACTURING THE SAME |
SG11201906718UA (en) * | 2017-03-15 | 2019-10-30 | Hitachi Chemical Co Ltd | Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device |
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-
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- 2019-09-30 WO PCT/JP2019/038626 patent/WO2021064826A1/ja unknown
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS506081B1 (ja) | 1970-12-09 | 1975-03-11 | ||
JP2014167145A (ja) | 2013-02-28 | 2014-09-11 | Osaka Univ | 接合材 |
WO2016132814A1 (ja) * | 2015-02-19 | 2016-08-25 | 綜研化学株式会社 | 焼成ペースト用樹脂組成物および焼成ペースト |
JP2018152176A (ja) * | 2017-03-10 | 2018-09-27 | 日立化成株式会社 | 接合用銅ペースト及び半導体装置 |
JP6563618B1 (ja) * | 2019-01-11 | 2019-08-21 | Jx金属株式会社 | 導電性塗布材料 |
Non-Patent Citations (1)
Title |
---|
See also references of EP4023367A4 |
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