JP2018200739A5 - - Google Patents
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- JP2018200739A5 JP2018200739A5 JP2018102557A JP2018102557A JP2018200739A5 JP 2018200739 A5 JP2018200739 A5 JP 2018200739A5 JP 2018102557 A JP2018102557 A JP 2018102557A JP 2018102557 A JP2018102557 A JP 2018102557A JP 2018200739 A5 JP2018200739 A5 JP 2018200739A5
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- 238000000034 method Methods 0.000 claims 10
- 230000004044 response Effects 0.000 claims 4
- 230000000415 inactivating effect Effects 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20170066377 | 2017-05-29 | ||
| KR10-2017-0066377 | 2017-05-29 | ||
| KR10-2017-0089692 | 2017-07-14 | ||
| KR1020170089692A KR20180130417A (ko) | 2017-05-29 | 2017-07-14 | 온-다이 터미네이션의 제어 방법 및 이를 수행하는 시스템 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018200739A JP2018200739A (ja) | 2018-12-20 |
| JP2018200739A5 true JP2018200739A5 (enExample) | 2021-07-26 |
| JP7023791B2 JP7023791B2 (ja) | 2022-02-22 |
Family
ID=64109546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018102557A Active JP7023791B2 (ja) | 2017-05-29 | 2018-05-29 | オン-ダイターミネーションの制御方法及びこれを遂行するシステム |
Country Status (4)
| Country | Link |
|---|---|
| US (4) | US10566038B2 (enExample) |
| JP (1) | JP7023791B2 (enExample) |
| CN (2) | CN108932960B (enExample) |
| DE (1) | DE102018108554A1 (enExample) |
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| KR102665412B1 (ko) | 2018-03-27 | 2024-05-20 | 삼성전자주식회사 | 멀티-랭크들의 온-다이 터미네이션(odt) 셋팅을 최적화하는 방법 및 메모리 시스템 |
| US10318464B1 (en) * | 2018-06-28 | 2019-06-11 | Montage Technology Co., Ltd. | Memory system and method for accessing memory system |
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| KR20200086137A (ko) * | 2019-01-08 | 2020-07-16 | 에스케이하이닉스 주식회사 | 반도체장치 및 반도체시스템 |
| CN112817884B (zh) * | 2019-11-15 | 2025-04-04 | 安徽寒武纪信息科技有限公司 | 一种存储器以及包括该存储器的设备 |
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| KR20220126833A (ko) | 2021-03-09 | 2022-09-19 | 삼성전자주식회사 | 데이터 클럭의 동기화를 연장하는 메모리 장치의 동작 방법, 및 메모리 장치를 포함하는 전자 장치의 동작 방법 |
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| JP7490790B2 (ja) * | 2022-03-25 | 2024-05-27 | チャンシン メモリー テクノロジーズ インコーポレイテッド | 制御方法、半導体メモリ及び電子機器 |
| KR20250020709A (ko) | 2022-03-25 | 2025-02-11 | 창신 메모리 테크놀로지즈 아이엔씨 | 제어 방법, 반도체 메모리 및 전자 기기 |
| KR20250022229A (ko) * | 2022-03-25 | 2025-02-14 | 창신 메모리 테크놀로지즈 아이엔씨 | 제어 방법, 반도체 메모리 및 전자 기기 |
| US12142314B2 (en) * | 2022-04-20 | 2024-11-12 | Samsung Electronics Co., Ltd. | Semiconductor die for controlling on-die-termination of another semiconductor die, and semiconductor devices including the same |
| US12333169B2 (en) | 2022-04-25 | 2025-06-17 | Samsung Electronics Co., Ltd. | Memory system for optimizing on-die termination settings of multi-ranks, method of operation of memory system, and memory controller |
| KR20240039924A (ko) | 2022-09-20 | 2024-03-27 | 삼성전자주식회사 | 다양한 동작 모드를 가지는 반도체 메모리 장치 및 메모리 모듈 |
| CN118866040B (zh) * | 2023-04-14 | 2025-10-03 | 长鑫存储技术有限公司 | 一种命令产生电路和存储器 |
| US20250245145A1 (en) * | 2024-01-29 | 2025-07-31 | Western Digital Technologies, Inc. | Non-target on-die termination |
| CN118969051A (zh) * | 2024-10-12 | 2024-11-15 | 博越微电子(江苏)有限公司 | 一种lpddr5x的全速自测方法及系统 |
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| KR100528164B1 (ko) * | 2004-02-13 | 2005-11-15 | 주식회사 하이닉스반도체 | 반도체 기억 소자에서의 온 다이 터미네이션 모드 전환회로 및 그 방법 |
| US7164600B2 (en) * | 2004-12-10 | 2007-01-16 | Micron Technology Inc | Reducing DQ pin capacitance in a memory device |
| US7079441B1 (en) | 2005-02-04 | 2006-07-18 | Infineon Technologies Ag | Methods and apparatus for implementing a power down in a memory device |
| US9171585B2 (en) * | 2005-06-24 | 2015-10-27 | Google Inc. | Configurable memory circuit system and method |
| US7259585B2 (en) | 2005-09-28 | 2007-08-21 | International Business Machines Corporation | Selective on-die termination for improved power management and thermal distribution |
| KR100625298B1 (ko) | 2005-09-29 | 2006-09-15 | 주식회사 하이닉스반도체 | 온 다이 터미네이션 제어 장치 |
| US7429871B2 (en) * | 2005-09-29 | 2008-09-30 | Hynix Semiconductor Inc. | Device for controlling on die termination |
| US7414426B2 (en) * | 2005-12-07 | 2008-08-19 | Intel Corporation | Time multiplexed dynamic on-die termination |
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| US7342411B2 (en) * | 2005-12-07 | 2008-03-11 | Intel Corporation | Dynamic on-die termination launch latency reduction |
| KR100738969B1 (ko) * | 2006-08-16 | 2007-07-12 | 주식회사 하이닉스반도체 | 반도체 메모리의 온-다이 터미네이션 제어 장치 및 방법 |
| JP2009252322A (ja) | 2008-04-09 | 2009-10-29 | Nec Electronics Corp | 半導体メモリ装置 |
| US8041865B2 (en) * | 2008-08-04 | 2011-10-18 | Qimonda Ag | Bus termination system and method |
| US7944726B2 (en) | 2008-09-30 | 2011-05-17 | Intel Corporation | Low power termination for memory modules |
| JP2010170296A (ja) | 2009-01-22 | 2010-08-05 | Elpida Memory Inc | メモリシステム、半導体記憶装置、及び配線基板 |
| KR20110128858A (ko) | 2009-02-12 | 2011-11-30 | 모사이드 테크놀로지스 인코퍼레이티드 | 온-다이 터미네이션을 위한 터미네이션 회로 |
| WO2010144624A1 (en) | 2009-06-09 | 2010-12-16 | Google Inc. | Programming of dimm termination resistance values |
| KR101789077B1 (ko) | 2010-02-23 | 2017-11-20 | 삼성전자주식회사 | 온-다이 터미네이션 회로, 데이터 출력 버퍼, 반도체 메모리 장치, 메모리 모듈, 온-다이 터미네이션 회로의 구동 방법, 데이터 출력 버퍼의 구동 방법 및 온-다이 터미네이션 트레이닝 방법 |
| US8966208B2 (en) * | 2010-02-25 | 2015-02-24 | Conversant Ip Management Inc. | Semiconductor memory device with plural memory die and controller die |
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| CN107391397B (zh) | 2011-09-30 | 2021-07-27 | 英特尔公司 | 支持近存储器和远存储器访问的存储器通道 |
| KR20140008745A (ko) * | 2012-07-11 | 2014-01-22 | 삼성전자주식회사 | 자기 메모리 장치 |
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| US9780782B2 (en) | 2014-07-23 | 2017-10-03 | Intel Corporation | On-die termination control without a dedicated pin in a multi-rank system |
| US9230984B1 (en) | 2014-09-30 | 2016-01-05 | Sandisk Technologies Inc | Three dimensional memory device having comb-shaped source electrode and methods of making thereof |
| CN104332176A (zh) * | 2014-11-14 | 2015-02-04 | 福州瑞芯微电子有限公司 | 一种省掉内存odt引脚的方法和系统 |
| US10255220B2 (en) * | 2015-03-30 | 2019-04-09 | Rambus Inc. | Dynamic termination scheme for memory communication |
| JP2017027638A (ja) | 2015-07-16 | 2017-02-02 | 京セラドキュメントソリューションズ株式会社 | 配線回路、制御装置、及び画像処理装置 |
| US10141935B2 (en) * | 2015-09-25 | 2018-11-27 | Intel Corporation | Programmable on-die termination timing in a multi-rank system |
| KR20170089692A (ko) | 2016-01-27 | 2017-08-04 | 주식회사 스맥 | 전동식 건물 비상 탈출 장치 |
| US10416896B2 (en) * | 2016-10-14 | 2019-09-17 | Samsung Electronics Co., Ltd. | Memory module, memory device, and processing device having a processor mode, and memory system |
| US10490239B2 (en) * | 2016-12-27 | 2019-11-26 | Intel Corporation | Programmable data pattern for repeated writes to memory |
| US10566038B2 (en) | 2017-05-29 | 2020-02-18 | Samsung Electronics Co., Ltd. | Method of controlling on-die termination and system performing the same |
-
2018
- 2018-03-12 US US15/918,526 patent/US10566038B2/en active Active
- 2018-04-11 DE DE102018108554.0A patent/DE102018108554A1/de active Pending
- 2018-05-28 CN CN201810522583.2A patent/CN108932960B/zh active Active
- 2018-05-28 CN CN202110219921.7A patent/CN112951287B/zh active Active
- 2018-05-29 JP JP2018102557A patent/JP7023791B2/ja active Active
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2019
- 2019-12-19 US US16/721,131 patent/US10692554B2/en active Active
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2020
- 2020-04-14 US US16/848,364 patent/US10916279B2/en active Active
-
2021
- 2021-01-05 US US17/141,357 patent/US11475930B2/en active Active
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