JP2018195831A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2018195831A JP2018195831A JP2018128212A JP2018128212A JP2018195831A JP 2018195831 A JP2018195831 A JP 2018195831A JP 2018128212 A JP2018128212 A JP 2018128212A JP 2018128212 A JP2018128212 A JP 2018128212A JP 2018195831 A JP2018195831 A JP 2018195831A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- light
- transparent substrate
- diode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Images
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F21V17/10—Fastening of component parts of lighting devices, e.g. shades, globes, refractors, reflectors, filters, screens, grids or protective cages characterised by specific fastening means or way of fastening
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Abstract
【解決手段】発光ダイオードチップ310は、透明基板2の第1の表面21Aに設けられる発光ダイオード構造3と、発光ダイオード構造を覆い且つ透明基板の側面を覆わない第1の波長変換層4と、基板の異なる側の端部にそれぞれ位置する第1の接続電極311A及び第2の接続電極311Bと、を含み、発光ダイオードチップは載置基部に挿入されている、発光装置。
【選択図】図6
Description
2 透明基板
3、14 発光ダイオード構造
4 エネルギー変換層
5、26、324 載置基部
6 回路基板
7、7’ ランプ筐体
8 反射鏡
9、25 ダイヤモンド状炭素膜
11、100、200、301、302、303、304 発光装置
12M 非平面構造
13 緩衝層
16、31A 第1の電極
18、31B 第2の電極
20 絶縁層
21A 第1の主表面
21B 第2の主表面
22 導電パターン
23A 第1の接続導線
23B 第2の接続導線
28 光学膜
30、32 電極
34 発光面
51 支持フレーム
52 接合層
60 載置機構
61 挿入溝
62 支持フレーム
63 接合層
64 基部
71 カバー面
141 第1の半導体層
142 活性層
143 第2の半導体層
210 成長面
311A 第1の接続電極
311B 第2の接続電極
321 支持フレーム
322 装置基部
323 ライトストリップ
330 切欠き
341 載置基部
342 ストリップ状部
350A 第1の外部接続電極
350B 第2の外部接続電極
360 装置フレーム
D 距離
G 切欠き
H 孔
L 光線
P 回路パターン
S 空間
V+ 駆動電圧
V− 駆動電圧
θ1 第1の夾角
X 延伸方向
Claims (8)
- 載置基部と、
前記載置基部に挿入された発光ダイオードチップと、を含み、
前記発光ダイオードチップは、
第1の表面及び側面を有する基板と、
前記第1の表面に設けられる発光ダイオード構造と、
前記発光ダイオード構造を覆い、且つ前記側面を覆わない第1の波長変換層と、
前記基板の異なる側の端部にそれぞれ位置する第1の接続電極及び第2の接続電極と、を含む、発光装置。 - 前記第1の波長変換層は、前記第1の表面を完全に覆うものではない、請求項1に記載の発光装置。
- 反射鏡をさらに含み、
前記基板は、前記反射鏡と前記発光ダイオード構造との間に位置する、請求項1に記載の発光装置。 - 前記載置基部は、前記発光ダイオードチップを接続するための挿入溝を有する、請求項1に記載の発光装置。
- 前記載置基部と前記発光ダイオードチップとは、30°〜150°の夾角をなす、請求項1に記載の発光装置。
- 第2の波長変換層をさらに含み、
前記基板は、前記第1の表面とは反対側の第2の表面をさらに含み、
前記第2の表面は、前記第2の波長変換層により覆われている、請求項1に記載の発光装置。 - 前記第2の波長変換層は、前記側面を覆わない、請求項6に記載の発光装置。
- 前記発光ダイオードチップを囲むランプ筐体をさらに含む、請求項1に記載の発光装置。
Applications Claiming Priority (18)
Application Number | Priority Date | Filing Date | Title |
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TW101119098 | 2012-05-29 | ||
TW101119098 | 2012-05-29 | ||
TW101121921 | 2012-06-19 | ||
TW101121921 | 2012-06-19 | ||
TW101125599A TWI479695B (zh) | 2012-07-16 | 2012-07-16 | A light emitting diode chip and a light emitting element |
TW101125599 | 2012-07-16 | ||
TW101131198A TW201409775A (zh) | 2012-08-28 | 2012-08-28 | 具有發光二極體的發光裝置 |
TW101131198 | 2012-08-28 | ||
TW101131643A TWI464908B (zh) | 2012-08-30 | 2012-08-30 | Light emitting device |
TW101131643 | 2012-08-30 | ||
TW101132187 | 2012-09-04 | ||
TW101132185A TWI577919B (zh) | 2012-09-04 | 2012-09-04 | Light emitting device |
TW101132185 | 2012-09-04 | ||
TW101132187A TWI490432B (zh) | 2012-09-04 | 2012-09-04 | Light emitting device |
TW102116429 | 2013-05-08 | ||
TW102116429A TWI533468B (zh) | 2012-05-29 | 2013-05-08 | 發光元件及其發光裝置 |
TW102116650A TWI511279B (zh) | 2012-06-19 | 2013-05-10 | 用於形成多方向出光之發光二極體晶片的藍寶石基板 |
TW102116650 | 2013-05-10 |
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Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9166116B2 (en) * | 2012-05-29 | 2015-10-20 | Formosa Epitaxy Incorporation | Light emitting device |
TWI540768B (zh) * | 2012-12-21 | 2016-07-01 | 鴻海精密工業股份有限公司 | 發光晶片組合及其製造方法 |
US9565782B2 (en) | 2013-02-15 | 2017-02-07 | Ecosense Lighting Inc. | Field replaceable power supply cartridge |
US20150003058A1 (en) * | 2013-07-01 | 2015-01-01 | Biao Zhang | Led light bulb |
US9123866B2 (en) * | 2013-09-26 | 2015-09-01 | Seoul Viosys Co., Ltd. | Light emitting device having wide beam angle and method of fabricating the same |
TWI660494B (zh) * | 2014-03-18 | 2019-05-21 | 晶元光電股份有限公司 | 照明裝置 |
CN104048204A (zh) * | 2014-07-10 | 2014-09-17 | 宋勇飞 | Led光源及其制造方法 |
US9911907B2 (en) | 2014-07-28 | 2018-03-06 | Epistar Corporation | Light-emitting apparatus |
CN110578912B (zh) * | 2014-07-28 | 2021-04-06 | 晶元光电股份有限公司 | 发光组件 |
US9765956B2 (en) * | 2014-08-04 | 2017-09-19 | Spring City Electrical Manufacturing Company | LED luminaire light fixture for a lamppost |
US10854800B2 (en) * | 2014-08-07 | 2020-12-01 | Epistar Corporation | Light emitting device, light emitting module, and illuminating apparatus |
CN104251404A (zh) * | 2014-08-13 | 2014-12-31 | 浙江英特来光电科技有限公司 | 一种低热阻的高光效高显指双面发光白光led |
US11421827B2 (en) | 2015-06-19 | 2022-08-23 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
US11686436B2 (en) | 2014-09-28 | 2023-06-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and light bulb using LED filament |
US11085591B2 (en) | 2014-09-28 | 2021-08-10 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
US11525547B2 (en) | 2014-09-28 | 2022-12-13 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED light bulb with curved filament |
US11543083B2 (en) | 2014-09-28 | 2023-01-03 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
US11997768B2 (en) | 2014-09-28 | 2024-05-28 | Zhejiang Super Lighting Electric Appliance Co., Ltd | LED filament and LED light bulb |
US11073248B2 (en) | 2014-09-28 | 2021-07-27 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED bulb lamp |
US12007077B2 (en) | 2014-09-28 | 2024-06-11 | Zhejiang Super Lighting Electric Appliance Co., Ltd. | LED filament and LED light bulb |
US9634187B2 (en) * | 2014-09-29 | 2017-04-25 | Bridgelux, Inc. | Flip chip light emitting diode having trnsparent material with surface features |
CN104269492B (zh) * | 2014-10-14 | 2017-09-26 | 华南师范大学 | 全角度发光的功率型led及其制作方法 |
US10477636B1 (en) | 2014-10-28 | 2019-11-12 | Ecosense Lighting Inc. | Lighting systems having multiple light sources |
US9869450B2 (en) | 2015-02-09 | 2018-01-16 | Ecosense Lighting Inc. | Lighting systems having a truncated parabolic- or hyperbolic-conical light reflector, or a total internal reflection lens; and having another light reflector |
US11306897B2 (en) | 2015-02-09 | 2022-04-19 | Ecosense Lighting Inc. | Lighting systems generating partially-collimated light emissions |
US9746159B1 (en) | 2015-03-03 | 2017-08-29 | Ecosense Lighting Inc. | Lighting system having a sealing system |
US9568665B2 (en) | 2015-03-03 | 2017-02-14 | Ecosense Lighting Inc. | Lighting systems including lens modules for selectable light distribution |
US9651227B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Low-profile lighting system having pivotable lighting enclosure |
US9651216B2 (en) | 2015-03-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting systems including asymmetric lens modules for selectable light distribution |
US20160348859A1 (en) * | 2015-05-26 | 2016-12-01 | Yu-Nan WANG | Strip light and lighting device application thereof |
TWM513319U (zh) * | 2015-06-24 | 2015-12-01 | Lediamond Opto Corp | 光學模組更換型燈具 |
USD785218S1 (en) | 2015-07-06 | 2017-04-25 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
USD782094S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
USD782093S1 (en) | 2015-07-20 | 2017-03-21 | Ecosense Lighting Inc. | LED luminaire having a mounting system |
US9651232B1 (en) | 2015-08-03 | 2017-05-16 | Ecosense Lighting Inc. | Lighting system having a mounting device |
WO2017048771A1 (en) | 2015-09-15 | 2017-03-23 | Zdenko Grajcar | Promoting biological responses in incubated eggs |
CN105280782B (zh) * | 2015-11-05 | 2018-09-18 | 深圳市超频三科技股份有限公司 | 一种液冷灯具、片状发光体及其制造方法 |
TW201721053A (zh) * | 2015-12-02 | 2017-06-16 | 羅冠傑 | 燈殼整合型發光二極體及其製作方法 |
DE102016105211A1 (de) | 2016-03-21 | 2017-09-21 | Osram Opto Semiconductors Gmbh | Filament und dessen Herstellung sowie Leuchtmittel mit Filamenten |
DE102016105537A1 (de) | 2016-03-24 | 2017-09-28 | Osram Opto Semiconductors Gmbh | Filament mit lichtemittierenden halbleiterchips, leuchtmittel und verfahren zur herstellung eines filaments |
DE102016214340A1 (de) * | 2016-08-03 | 2018-02-08 | Osram Gmbh | LED-Modul |
DE102016123535A1 (de) * | 2016-12-06 | 2018-06-07 | Osram Opto Semiconductors Gmbh | Bauteil mit einem strahlungsemittierenden optoelektronischen Bauelement |
US10738946B2 (en) * | 2017-02-26 | 2020-08-11 | Xiamen Eco Lighting Co., Ltd. | LED light bulb |
US10330263B2 (en) * | 2017-02-26 | 2019-06-25 | Leedarson America Inc. | Light apparatus |
KR102430500B1 (ko) | 2017-05-30 | 2022-08-08 | 삼성전자주식회사 | 반도체 발광소자 및 이를 이용한 led 모듈 |
CN111987212A (zh) * | 2017-06-27 | 2020-11-24 | 亿光电子工业股份有限公司 | 一种封装支架结构及包含该封装支架机构的发光装置 |
CN207133458U (zh) * | 2017-09-19 | 2018-03-23 | 北京京东方显示技术有限公司 | 导光板、背光模组及显示装置 |
KR102415343B1 (ko) * | 2017-09-25 | 2022-06-30 | 엘지전자 주식회사 | 디스플레이 디바이스 |
TWI666792B (zh) * | 2017-09-27 | 2019-07-21 | 致伸科技股份有限公司 | 光源模組以及光源模組之製造方法 |
DE102018119438A1 (de) * | 2018-08-09 | 2020-02-13 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip, optoelektronisches bauteil und verfahren zur herstellung eines optoelektronischen bauteils |
FR3094141A1 (fr) * | 2019-03-18 | 2020-09-25 | Commissariat à l'Energie Atomique et aux Energies Alternatives | procede de fabrication d’un composant optoelectronique a transmission optique en face arriere |
DE102019106931A1 (de) * | 2019-03-19 | 2020-09-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement, optoelektronische Halbleitervorrichtung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
CN110277482A (zh) * | 2019-07-03 | 2019-09-24 | 华南理工大学 | 一种棱台基板led车灯 |
US11029001B2 (en) | 2019-08-21 | 2021-06-08 | RAB Lighting Inc. | Apparatuses and methods for changing lighting fixture dimensions |
DE102020125892A1 (de) | 2020-10-02 | 2022-04-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische vorrichtung und verfahren zum erzeugen einer optoelektronischen vorrichtung |
WO2022144252A1 (en) * | 2021-01-04 | 2022-07-07 | Signify Holding B.V. | Led filament |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006054417A (ja) * | 2004-08-10 | 2006-02-23 | Samsung Electro Mech Co Ltd | 窒化ガリウム系半導体発光素子及びその製造方法 |
JP2010074090A (ja) * | 2008-09-22 | 2010-04-02 | Meijo Univ | 発光素子、発光素子用サファイア基板及び発光素子用サファイア基板の製造方法 |
JP2010170945A (ja) * | 2009-01-26 | 2010-08-05 | Panasonic Corp | 電球形照明装置 |
US20110163683A1 (en) * | 2011-02-22 | 2011-07-07 | Quarkstar, Llc | Solid State Lamp Using Light Emitting Strips |
KR20110099513A (ko) * | 2010-03-02 | 2011-09-08 | 삼성엘이디 주식회사 | 조명 장치 |
Family Cites Families (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5718771Y2 (ja) | 1976-05-25 | 1982-04-20 | ||
US4957785A (en) * | 1988-03-25 | 1990-09-18 | Fornadley Michael R | Light transmissive stone structure and method for making same |
US5168023A (en) | 1990-07-04 | 1992-12-01 | Matsushita Electric Industrial Co., Ltd. | Photosensitive element used in electrophotography |
TW393582B (en) * | 1995-12-05 | 2000-06-11 | Matsushita Electric Ind Co Ltd | Backlighting device and color display device |
JPH10117018A (ja) | 1996-10-11 | 1998-05-06 | Citizen Electron Co Ltd | チップ型発光ダイオード |
TW408497B (en) * | 1997-11-25 | 2000-10-11 | Matsushita Electric Works Ltd | LED illuminating apparatus |
JP4061005B2 (ja) | 1999-03-31 | 2008-03-12 | シャープ株式会社 | 発光ダイオードおよびその製造方法並びに発光ダイオードの電気配線基板への搭載方法 |
US6550953B1 (en) * | 1999-08-20 | 2003-04-22 | Toyoda Gosei Co. Ltd. | Light emitting diode lamp device |
JP2002232020A (ja) | 2001-01-31 | 2002-08-16 | Matsushita Electric Ind Co Ltd | Ledおよびこれを用いた表示装置、照明装置、液晶のバックライト装置並びに投影装置の光源装置 |
TW511299B (en) | 2001-03-14 | 2002-11-21 | Kuo-Yen Lai | Metal substrate with double LED for double side light emission |
JP3806923B2 (ja) * | 2001-10-30 | 2006-08-09 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US6771021B2 (en) * | 2002-05-28 | 2004-08-03 | Eastman Kodak Company | Lighting apparatus with flexible OLED area illumination light source and fixture |
CN100373637C (zh) * | 2002-09-13 | 2008-03-05 | 统宝光电股份有限公司 | 封装保护结构 |
TW561564B (en) | 2002-10-17 | 2003-11-11 | Uni Light Technology Inc | Flip-chip like light emitting device package |
JP2004200209A (ja) | 2002-12-16 | 2004-07-15 | Fuji Xerox Co Ltd | 電極等の導電パターンの形成方法およびこれを用いた面発光型半導体レーザ並びにその製造方法 |
TW582122B (en) | 2003-01-27 | 2004-04-01 | Opto Tech Corp | Light emitting diode package structure |
TW200414563A (en) | 2003-01-30 | 2004-08-01 | South Epitaxy Corp | Light emitting diode and a method of manufacturing the same |
US20050052885A1 (en) * | 2003-09-04 | 2005-03-10 | Amazing International Enterprise Limited | Structure of LED decoration lighting set |
WO2005090514A1 (ja) | 2004-03-22 | 2005-09-29 | Fujikura Ltd. | 酸窒化物蛍光体及び発光デバイス |
JP2005347516A (ja) | 2004-06-03 | 2005-12-15 | Jsr Corp | 発光装置 |
US7781789B2 (en) | 2006-11-15 | 2010-08-24 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
EP1640756A1 (en) | 2004-09-27 | 2006-03-29 | Barco N.V. | Methods and systems for illuminating |
WO2006068297A1 (en) | 2004-12-22 | 2006-06-29 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element |
JP4604745B2 (ja) | 2005-02-02 | 2011-01-05 | 船井電機株式会社 | 液晶表示パネルの面光源装置 |
JP2006216765A (ja) | 2005-02-03 | 2006-08-17 | Nippon Leiz Co Ltd | 光源装置 |
CN1866552A (zh) | 2005-05-18 | 2006-11-22 | 光宝科技股份有限公司 | 光线行进方向改变单元及含有其的模块和发光二极管组件 |
TWI295144B (en) * | 2005-06-10 | 2008-03-21 | Au Optronics Corp | Dual emitting device |
CN1909255A (zh) * | 2005-08-05 | 2007-02-07 | 宋文恭 | 多向性发光二极管 |
CN1941347A (zh) * | 2005-09-29 | 2007-04-04 | 中国砂轮企业股份有限公司 | 高导热效率电路板 |
CN100385292C (zh) * | 2005-10-19 | 2008-04-30 | 友达光电股份有限公司 | 双面液晶显示器 |
TW200717854A (en) * | 2005-10-27 | 2007-05-01 | Formosa Epitaxy Inc | Surface mount light emitting diode package |
TWM322064U (en) * | 2005-10-27 | 2007-11-11 | Formosa Epitaxy Inc | Surface mount light emitting diode package |
KR100635346B1 (ko) * | 2005-11-15 | 2006-10-18 | 서울옵토디바이스주식회사 | 색변환 물질층을 갖는 교류용 발광 다이오드 칩 및 그것을제조하는 방법 |
CN1983650A (zh) * | 2005-12-12 | 2007-06-20 | 璨圆光电股份有限公司 | 具有多方向性光散射的发光二极体的结构及其制造方法 |
JP2007165811A (ja) | 2005-12-16 | 2007-06-28 | Nichia Chem Ind Ltd | 発光装置 |
TWI268003B (en) | 2005-12-20 | 2006-12-01 | Univ Nat Cheng Kung | Manufacturing method of LED |
US7569406B2 (en) | 2006-01-09 | 2009-08-04 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
KR100703217B1 (ko) * | 2006-02-22 | 2007-04-09 | 삼성전기주식회사 | 발광다이오드 패키지 제조방법 |
JP2007234975A (ja) | 2006-03-02 | 2007-09-13 | Matsushita Electric Ind Co Ltd | Led光源モジュール、エッジ入力型バックライトおよび液晶表示装置 |
JP2007324578A (ja) | 2006-05-01 | 2007-12-13 | Mitsubishi Chemicals Corp | 集積型半導体発光装置およびその製造方法 |
KR20090007741A (ko) * | 2006-05-02 | 2009-01-20 | 슈퍼불브스, 인크. | Led 전구를 위한 열제거 설계 |
CN101123302B (zh) * | 2006-08-07 | 2010-10-13 | 中华映管股份有限公司 | 双面发光型有机发光二极管及其制作方法 |
KR100803162B1 (ko) * | 2006-11-20 | 2008-02-14 | 서울옵토디바이스주식회사 | 교류용 발광소자 |
CN101192601B (zh) | 2006-11-30 | 2010-10-13 | 东芝照明技术株式会社 | 具有半导体发光元件的照明装置 |
TW200825529A (en) | 2006-12-06 | 2008-06-16 | Chi Lin Technology Co Ltd | Light mixer and backlight module having it |
TWM323569U (en) | 2006-12-29 | 2007-12-11 | Greenpower Lighting Co Ltd | Lamp holder structure |
US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US7841741B2 (en) * | 2007-04-02 | 2010-11-30 | Endicott Interconnect Technologies, Inc. | LED lighting assembly and lamp utilizing same |
JP5045336B2 (ja) | 2007-04-16 | 2012-10-10 | 豊田合成株式会社 | 半導体発光素子 |
TWM319375U (en) * | 2007-04-23 | 2007-09-21 | Guo-Chiou Jiang | LED lamp |
CN101299427B (zh) * | 2007-04-30 | 2010-06-02 | 启萌科技有限公司 | 发光模块 |
KR20100018581A (ko) * | 2007-05-25 | 2010-02-17 | 가부시키가이샤 니콘 | 광학 소자 유지 장치, 경통 및 노광 장치 및 디바이스의 제조 방법 |
TWM324300U (en) | 2007-06-29 | 2007-12-21 | Chia-Ming Tu | Translucent LED array display device |
TWI315772B (en) | 2007-08-21 | 2009-10-11 | Next Generation Lighting Source Co Ltd | Hybrid lighting source |
TWI360892B (en) | 2007-11-01 | 2012-03-21 | Epistar Corp | Light-emitting device |
JP2011023375A (ja) | 2007-11-13 | 2011-02-03 | Helios Techno Holding Co Ltd | 発光装置 |
JP5463447B2 (ja) * | 2008-01-18 | 2014-04-09 | 三洋電機株式会社 | 発光装置及びそれを備えた灯具 |
US8575641B2 (en) * | 2011-08-11 | 2013-11-05 | Goldeneye, Inc | Solid state light sources based on thermally conductive luminescent elements containing interconnects |
TW200941758A (en) | 2008-03-25 | 2009-10-01 | Bright Led Electronics Corp | LED-based surface light-source device |
TW200950181A (en) | 2008-05-28 | 2009-12-01 | Genesis Photonics Inc | Thermal/electric separation LED |
CN101303105B (zh) * | 2008-05-30 | 2010-06-09 | 梁秉武 | 一种可提升发光二极管led发光效率的结构 |
KR200449665Y1 (ko) * | 2008-08-05 | 2010-07-29 | 에프엘 테크놀로지(주) | 엘이디 조명등 |
JP5067631B2 (ja) | 2008-09-22 | 2012-11-07 | 東芝ライテック株式会社 | 照明装置 |
US20100073944A1 (en) | 2008-09-23 | 2010-03-25 | Edison Opto Corporation | Light emitting diode bulb |
CN201277506Y (zh) | 2008-09-28 | 2009-07-22 | 黄勇斌 | 可调角度led射灯 |
TWI422006B (zh) | 2008-10-07 | 2014-01-01 | Formosa Epitaxy Inc | An alternating current emitting device and a manufacturing method thereof |
KR101609866B1 (ko) * | 2008-10-29 | 2016-04-08 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR101024003B1 (ko) | 2008-11-10 | 2011-03-29 | 나노엘이디(주) | 엘이디 램프 |
WO2010065860A2 (en) | 2008-12-04 | 2010-06-10 | The Regents Of The Univerity Of California | Electron injection nanostructured semiconductor material anode electroluminescence method and device |
JP4724222B2 (ja) | 2008-12-12 | 2011-07-13 | 株式会社東芝 | 発光装置の製造方法 |
KR20100076083A (ko) | 2008-12-17 | 2010-07-06 | 서울반도체 주식회사 | 복수개의 발광셀들을 갖는 발광 다이오드 및 그것을 제조하는 방법 |
CN101800270A (zh) * | 2009-02-11 | 2010-08-11 | 亿光电子工业股份有限公司 | 发光二极管装置及其封装方法 |
US8382331B2 (en) | 2009-04-03 | 2013-02-26 | Yung Pun Cheng | LED lighting lamp |
US8079735B1 (en) | 2009-03-31 | 2011-12-20 | Usman Vakil | Light emitting diode illumination device |
CN101859829A (zh) * | 2009-04-07 | 2010-10-13 | 璨扬投资有限公司 | 具有多方向性光散射的发光二极管的结构及其制造方法 |
US8434883B2 (en) * | 2009-05-11 | 2013-05-07 | SemiOptoelectronics Co., Ltd. | LLB bulb having light extracting rough surface pattern (LERSP) and method of fabrication |
US8440500B2 (en) * | 2009-05-20 | 2013-05-14 | Interlight Optotech Corporation | Light emitting device |
TWI370882B (en) | 2009-06-03 | 2012-08-21 | Delta Electronics Inc | Lamp and its illumminating device |
CN101907241B (zh) * | 2009-06-08 | 2012-05-23 | 深圳晶蓝德灯饰有限公司 | 一种改进型led灯条 |
TWI495084B (zh) | 2009-07-07 | 2015-08-01 | Epistar Corp | 發光元件 |
TW201105885A (en) | 2009-08-10 | 2011-02-16 | Taiwan Epi Technology Ind Inc | Illumination apparatus using LED |
TWI391609B (zh) * | 2009-09-28 | 2013-04-01 | Yu Nung Shen | Light emitting diode lighting device |
CN102082218B (zh) * | 2009-11-26 | 2013-10-23 | 亿光电子工业股份有限公司 | 发光二极管及其装置、封装方法 |
US20110141748A1 (en) * | 2009-12-14 | 2011-06-16 | Han-Ming Lee | LED bracket weld-free plug-in lamp |
TWM383697U (en) | 2009-12-30 | 2010-07-01 | Sheng-Yi Zhuang | LED lamp set and light-emitting bulb applying the lamp set |
WO2011082497A1 (en) * | 2010-01-11 | 2011-07-14 | Cooledge Lighting Inc. | Package for light emitting and receiving devices |
TWM380428U (en) | 2010-01-15 | 2010-05-11 | Jeou Fwu Metallic Entpr Co Ltd | Light's easy renewal structure of collective LED lamp |
JP5010716B2 (ja) * | 2010-01-29 | 2012-08-29 | 株式会社東芝 | Ledパッケージ |
TWI398968B (zh) | 2010-02-03 | 2013-06-11 | Formosa Epitaxy Inc | 發光二極體結構以及其製作方法 |
JP5343018B2 (ja) | 2010-02-08 | 2013-11-13 | 昭和電工株式会社 | 発光ダイオード及びその製造方法、並びに発光ダイオードランプ |
TWM394300U (en) | 2010-03-31 | 2010-12-11 | Wei Chuan Foods Corp | Box and model constituting the same |
CN102222749A (zh) | 2010-04-19 | 2011-10-19 | 展晶科技(深圳)有限公司 | 发光组件及其模块 |
CN103003966B (zh) | 2010-05-18 | 2016-08-10 | 首尔半导体株式会社 | 具有波长变换层的发光二级管芯片及其制造方法,以及包括其的封装件及其制造方法 |
TWM389204U (en) | 2010-06-03 | 2010-09-21 | Liquidleds Lighting Corp | LED illumination lamp |
TWI451596B (zh) | 2010-07-20 | 2014-09-01 | Epistar Corp | 一種陣列式發光元件 |
CN102339927A (zh) | 2010-07-27 | 2012-02-01 | 展晶科技(深圳)有限公司 | 发光二极管 |
CN102374418B (zh) | 2010-08-20 | 2014-08-20 | 光宝电子(广州)有限公司 | 发光二极管灯具 |
US8723201B2 (en) | 2010-08-20 | 2014-05-13 | Invenlux Corporation | Light-emitting devices with substrate coated with optically denser material |
TWM400098U (en) | 2010-09-03 | 2011-03-11 | Hsiang-Wei Liu | Omni-directional light emitting device |
DK2535640T4 (da) | 2010-09-08 | 2020-09-28 | Zhejiang Ledison Optoelectronics Co Ltd | LED-pære og LED-belysningsliste til udsendelse af lys over 4 PI |
JP5545547B2 (ja) | 2010-10-07 | 2014-07-09 | 東芝ライテック株式会社 | 光源体および照明器具 |
US8445308B2 (en) * | 2010-10-15 | 2013-05-21 | Cooledge Lighting Inc. | Fabrication of phosphor dots and application of phosphor dots to arrays of lighting elements |
JP4778107B1 (ja) | 2010-10-19 | 2011-09-21 | 有限会社ナプラ | 発光デバイス、及び、その製造方法 |
US20120097985A1 (en) | 2010-10-21 | 2012-04-26 | Wen-Huang Liu | Light Emitting Diode (LED) Package And Method Of Fabrication |
EP2631958A1 (en) | 2010-10-22 | 2013-08-28 | Panasonic Corporation | Mounting board, light emitting device and lamp |
JP2012094443A (ja) | 2010-10-28 | 2012-05-17 | Stanley Electric Co Ltd | Ledランプ |
CN201866576U (zh) | 2010-10-28 | 2011-06-15 | 王元成 | 一种led灯泡 |
KR101726807B1 (ko) | 2010-11-01 | 2017-04-14 | 삼성전자주식회사 | 반도체 발광소자 |
JP2012099726A (ja) | 2010-11-04 | 2012-05-24 | Stanley Electric Co Ltd | Ledモジュール及びledランプ |
US20120118222A1 (en) | 2010-11-15 | 2012-05-17 | Sumitomo Electric Industries, Ltd. | METHOD OF MANUFACTURING GaN-BASED FILM |
JP2012114284A (ja) * | 2010-11-25 | 2012-06-14 | Toshiba Corp | Ledモジュール及び照明装置 |
TW201233940A (en) | 2010-11-30 | 2012-08-16 | Wintek Corp | Light source for crystal lamp |
US8587011B2 (en) | 2010-12-28 | 2013-11-19 | Panasonic Corporation | Light-emitting device, light-emitting module, and lamp |
TWM405538U (en) | 2011-01-26 | 2011-06-11 | Yong Xin Entpr Co | Improved type light emitting diode (LED) daylight lamp |
CN102130239B (zh) * | 2011-01-31 | 2012-11-07 | 郑榕彬 | 全方位采光的led封装方法及led封装件 |
US9508904B2 (en) * | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
CN202040633U (zh) * | 2011-04-13 | 2011-11-16 | 许有谋 | 广域发光的灯串结构 |
US8662794B2 (en) * | 2011-07-27 | 2014-03-04 | Hubbell Incorporated | Helical pile adapter |
CN103907211B (zh) | 2011-10-31 | 2017-03-15 | 夏普株式会社 | 发光装置、照明装置以及发光装置的制造方法 |
TWM426729U (en) | 2011-11-15 | 2012-04-11 | Unity Opto Technology Co Ltd | Improved LED bulb structure |
US8591072B2 (en) | 2011-11-16 | 2013-11-26 | Oree, Inc. | Illumination apparatus confining light by total internal reflection and methods of forming the same |
KR20140097404A (ko) * | 2011-11-23 | 2014-08-06 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 3차원 구조를 갖는 가요성 발광 반도체 디바이스 |
US9395051B2 (en) | 2012-04-13 | 2016-07-19 | Cree, Inc. | Gas cooled LED lamp |
US9010964B2 (en) * | 2012-04-26 | 2015-04-21 | Epistar Corporation | LED light bulb with interior facing LEDs |
US9166116B2 (en) * | 2012-05-29 | 2015-10-20 | Formosa Epitaxy Incorporation | Light emitting device |
CN103456728B (zh) * | 2012-05-29 | 2016-09-21 | 璨圆光电股份有限公司 | 发光组件及其发光装置 |
CN202733581U (zh) | 2012-08-27 | 2013-02-13 | 程敬鹏 | 一种全角度发光的led灯泡 |
TWM453804U (zh) | 2013-01-25 | 2013-05-21 | Bo-Cheng Lin | 具多方向照明之led燈泡 |
TWI599745B (zh) * | 2013-09-11 | 2017-09-21 | 晶元光電股份有限公司 | 可撓式發光二極體組件及發光二極體燈泡 |
-
2013
- 2013-03-15 US US13/834,246 patent/US9166116B2/en active Active
- 2013-03-18 US US13/845,160 patent/US9065022B2/en active Active
- 2013-05-22 CN CN201310191955.5A patent/CN103453357B/zh active Active
- 2013-05-22 CN CN201310191944.7A patent/CN103456863B/zh active Active
- 2013-05-22 CN CN2013202827433U patent/CN203322771U/zh not_active Expired - Lifetime
- 2013-05-22 CN CN2013202827787U patent/CN203325967U/zh not_active Expired - Lifetime
- 2013-05-29 DE DE202013012729.5U patent/DE202013012729U1/de not_active Expired - Lifetime
- 2013-05-29 DE DE202013012548.9U patent/DE202013012548U1/de not_active Expired - Lifetime
- 2013-05-29 DE DE202013012698.1U patent/DE202013012698U1/de not_active Expired - Lifetime
- 2013-05-29 DE DE202013012554.3U patent/DE202013012554U1/de not_active Expired - Lifetime
- 2013-05-29 DE DE202013012509.8U patent/DE202013012509U1/de not_active Expired - Lifetime
- 2013-05-29 DE DE202013012707.4U patent/DE202013012707U1/de not_active Expired - Lifetime
- 2013-05-29 DE DE202013012711.2U patent/DE202013012711U1/de not_active Expired - Lifetime
-
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- 2014-03-18 US US14/218,869 patent/US9488321B2/en active Active
- 2014-03-18 US US14/218,944 patent/US20180006199A9/en not_active Abandoned
- 2014-07-25 US US14/340,574 patent/US9711490B2/en active Active
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- 2020-05-29 US US16/887,948 patent/US11255524B2/en active Active
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- 2022-02-21 US US17/651,891 patent/US11808436B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006054417A (ja) * | 2004-08-10 | 2006-02-23 | Samsung Electro Mech Co Ltd | 窒化ガリウム系半導体発光素子及びその製造方法 |
JP2010074090A (ja) * | 2008-09-22 | 2010-04-02 | Meijo Univ | 発光素子、発光素子用サファイア基板及び発光素子用サファイア基板の製造方法 |
JP2010170945A (ja) * | 2009-01-26 | 2010-08-05 | Panasonic Corp | 電球形照明装置 |
KR20110099513A (ko) * | 2010-03-02 | 2011-09-08 | 삼성엘이디 주식회사 | 조명 장치 |
US20110163683A1 (en) * | 2011-02-22 | 2011-07-07 | Quarkstar, Llc | Solid State Lamp Using Light Emitting Strips |
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