200950181 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體（LED)，特別是指一種 電熱分離的發光二極體。 【先前技術】 最早期之平片導通式（horizontal feedthrough)LED，因 其磊晶基板（如，Al2〇3)熱傳係數低而產生有散熱問題。在 解決LED長期以來所存在的散熱問題之途徑中，現階段較 ® 為常見的技術主要是將羾-V氮化物之蟲晶膜預先與一導電 性的散熱基板結合，並以雷射剝離（laser Hft-〇ff，簡稱 LLO)的技術將原本與蟲晶膜連接的藍寶石（sapphire，ai2〇3) 基板移除以製成垂直導通式（vertical feedthrough)發光二極 體。 參閱圖1，現有一種垂直導通式發光二極體1，包含： 一由電鍵銅所構成的散熱基板U、一形成於該散熱基板u 並具有一正負接面（p-n junction)的磊晶膜12、一夾置於該 ❹ 磊晶膜12與該散熱基板11之間的反射膜13,及一設置於 該磊晶膜12的接觸電極14。 該垂直導通式發光二極體丨之散熱基板n同時亦可做 為該發光二極體1之接觸電極，經由外部提供該接觸電極 W與該散熱基板11電源，以使得該發光二極體〖得以運作 。該發光二極體1於運作過程中所產生的熱能，雖然可藉 由忒散熱基板11自該磊晶膜12向該散熱基板π的一傳遞 方向X以傳遞離開並達散熱效果。然而，由於該發光二極 200950181 體1之磊晶膜12的載子（carrier)是沿著該接觸電極i4流向200950181 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode (LED), and more particularly to an electrothermally separated light-emitting diode. [Prior Art] The earliest horizontal feedthrough LEDs have heat dissipation problems due to their low heat transfer coefficient of the epitaxial substrate (e.g., Al2?3). Among the ways to solve the long-standing heat dissipation problem of LEDs, the common technology at this stage is to combine the 羾-V nitride insect film with a conductive heat-dissipating substrate in advance and to remove it by laser ( The technique of laser Hft-〇ff, referred to as LLO), removes the sapphire (ai2〇3) substrate originally connected to the insect film to form a vertical feedthrough light-emitting diode. Referring to FIG. 1, a conventional vertical light-emitting diode 1 includes: a heat-dissipating substrate U formed of a key copper, and an epitaxial film 12 formed on the heat-dissipating substrate u and having a pn junction. And a reflective film 13 interposed between the 磊 epitaxial film 12 and the heat dissipation substrate 11, and a contact electrode 14 disposed on the epitaxial film 12. The heat-dissipating substrate n of the vertical-conducting light-emitting diode is also used as a contact electrode of the light-emitting diode 1 , and the contact electrode W and the heat-dissipating substrate 11 are externally supplied with power to make the light-emitting diode It works. The heat energy generated during the operation of the light-emitting diode 1 can be transmitted away from the epitaxial film 12 to a transfer direction X of the heat-dissipating substrate π by the heat-dissipating substrate 11 to achieve a heat-dissipating effect. However, since the carrier of the epitaxial film 12 of the light-emitting diode 200950181 body 1 flows along the contact electrode i4
該散熱基板11，其電性流通的方向亦是沿著該傳遞方向X 行進。因此，該發光二極體丨在排除熱能與傳遞載子的過 程中皆是使用同一路徑（即，該傳遞方向χ)，對於提供散熱 功效的散熱基板11而言，不僅無形中造成了雙重的傳遞負The direction in which the heat dissipation substrate 11 electrically flows also travels along the transfer direction X. Therefore, the light-emitting diode 使用 uses the same path (ie, the transfer direction 丨) in the process of excluding thermal energy and transmitting the carrier, and the heat-dissipating substrate 11 providing heat dissipation effect not only invisibly causes double Pass negative
擔，對於該發光二極體1整體的性能而言，亦有一定程度 上的影響。 X 經上述說明可知，在改善發光二極體之散熱問題的考 量下亦須維持發光二極體整體的元件性能，是目前研究開 發發光一極體相關領域者所待改善的課題。 【發明内容】 因此，本發明之目的，即在提供一種電熱分離的發光 二極體。 於是’本發明電熱分離的發光二極體，包含：一散熱 基板、一形成於該散熱基板的磊晶膜、一夹置於該散熱基 板與該磊晶膜之間的反射膜、一夾置於該磊晶膜與該反射 膜之間的散射膜、一夹置於該反射膜與該散熱基板之間的 類鑽碳膜’及二分別設置於該磊晶膜及該反射膜的接觸電 極。該散射膜具有複數分別設置於該反射膜並由透光性類 鑽碳所構成的柱體，及一覆蓋該等柱體的透光性導電層。 該類鑽碳膜的光穿透率是小於該等柱體的光穿透率。 本發明之功效在於，可改善發光二極體之散熱問題亦 能同時維持發光二極體整體的元件性能。 【實施方式】 6 200950181 有關本發明之前述及其他技術内容、特點與功效，在 以下配合參考圖式之一個較佳實施例的詳細說明中，將可 清楚的呈現。 參閱圖2,本發明電熱分離的發光二極體之一較佳實施 例，包含.一散熱基板2、一形成於該散熱基板2並具有一 p-n接面31的磊晶膜3、一夾置於該散熱基板2與該磊晶膜 3之間的反射膜4、一夾置於該磊晶膜3與該反射膜4之間 的散射膜5、一夾置於該反射膜4與該散熱基板2之間的類 〇 鑽碳膜6，及二分別設置於該磊晶膜3及該反射膜4的接觸 電極7。在本較佳實施例中，該散熱基板2是由電鍍銅所構 成，其電鍍銅的厚度是介於5〇μιη〜2〇〇 μιη之間；該反射 膜4是使用Al、Ag、Pt或Au等導電性材料；本較佳實施 例之發光二極體，亦是預先於該磊晶膜3上依序形成該散 射膜5、反射膜4、類鑽碳膜6與散熱基板2，並配合使用 雷射剝離（LLO)或濕式蝕刻等技術以移除磊晶基板所完成’ 相關於本較佳實施例之發光二極體的製作方法並非本發明 ® 之特徵，於此不再多加贅述。 該散射膜5具有複數分別設置於該反射膜4並由透光 性類鑽碳（diamond like carbon;簡稱DLC)所構成的柱體51 ，及一覆蓋該等柱體51的透光性導電層52。在本較佳實施 例中，該透光性導電層52是氧化銦錫（IT0)。 本較佳實施例之發光二極體的光取出率（extracti〇n efficiency)部分是藉由該等柱體51以提供自該磊晶膜3所 產生的光源形成散射（scattering)來達成。因此，較佳地，該 7 200950181 等柱體5 l的尺寸是介於1 ||m ^ - gg ^ 刃人了疋，丨於1 μηι〜5 之間；該等柱體51的 高度是介於100 nm〜500 nm之間；該透光性導電層^的 厚度是介於300 nm〜800 nm之間。 另，本較佳實施例之發光二極體的光取出率亦是經由 該等柱體51與該透光性導電層52兩者間的折射率 (refractive index)差所貢獻。因此，較佳地，該等柱體51的The effect on the overall performance of the light-emitting diode 1 also has a certain degree of influence. X According to the above description, it is necessary to maintain the overall performance of the light-emitting diode under the consideration of improving the heat dissipation problem of the light-emitting diode. This is a problem to be studied in the field of research and development of light-emitting diodes. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide an electrothermally separated light emitting diode. Thus, the electrothermally separated light-emitting diode of the present invention comprises: a heat dissipating substrate, an epitaxial film formed on the heat dissipating substrate, a reflective film interposed between the heat dissipating substrate and the epitaxial film, and a sandwich a scattering film between the epitaxial film and the reflective film, a diamond-like carbon film ' sandwiched between the reflective film and the heat dissipation substrate, and two contact electrodes respectively disposed on the epitaxial film and the reflective film . The scattering film has a plurality of pillars respectively disposed on the reflective film and composed of translucent diamond-like carbon, and a light-transmitting conductive layer covering the pillars. The light transmittance of the drilled carbon film is less than the light transmittance of the cylinders. The effect of the present invention is that the heat dissipation problem of the light-emitting diode can be improved while maintaining the overall element performance of the light-emitting diode. [Embodiment] 6 200950181 The foregoing and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to FIG. 2, a preferred embodiment of the electrothermally separated light-emitting diode of the present invention comprises: a heat dissipating substrate 2, an epitaxial film 3 formed on the heat dissipating substrate 2 and having a pn junction 31, and a sandwich a reflective film 4 between the heat dissipating substrate 2 and the epitaxial film 3, a scattering film 5 interposed between the epitaxial film 3 and the reflective film 4, and a heat dissipating film 5 interposed therebetween The tantalum-like carbon film 6 between the substrates 2 and the second are disposed on the epitaxial film 3 and the contact electrode 7 of the reflective film 4, respectively. In the preferred embodiment, the heat dissipating substrate 2 is made of electroplated copper, and the thickness of the electroplated copper is between 5 μm and 2 μm; the reflective film 4 is made of Al, Ag, Pt or a conductive material such as Au; the light-emitting diode of the preferred embodiment, wherein the scattering film 5, the reflective film 4, the diamond-like carbon film 6 and the heat dissipation substrate 2 are sequentially formed on the epitaxial film 3, and The method of manufacturing the light-emitting diode according to the preferred embodiment by using a technique such as laser lift-off (LLO) or wet etching to remove the epitaxial substrate is not a feature of the present invention. Narration. The scattering film 5 has a plurality of pillars 51 respectively disposed on the reflective film 4 and composed of a diamond-like diamond (DLC), and a light-transmitting conductive layer covering the pillars 51. 52. In the preferred embodiment, the light-transmitting conductive layer 52 is indium tin oxide (IT0). The portion of the light extraction efficiency of the light-emitting diode of the preferred embodiment is achieved by the pillars 51 forming scattering by the light source generated from the epitaxial film 3. Therefore, preferably, the size of the column 5 l of the 7 200950181 is between 1 ||m ^ - gg ^, and the height of the cylinder 51 is between 1 μηι and 5; Between 100 nm and 500 nm; the thickness of the transparent conductive layer is between 300 nm and 800 nm. Further, the light extraction ratio of the light-emitting diode of the preferred embodiment is also contributed by the difference in refractive index between the pillars 51 and the light-transmitting conductive layer 52. Therefore, preferably, the columns 51
折射率是高於該透光性導電層52的折射率。在本較佳實施 例中’該等㈣51之類鐵碳（DLC)是經由電聚輔助化學氣 相沉積系統（PECVD)以介於500t〜6〇〇之間的沉積溫度所 製成，且該等柱體51的折射率約2.8 ;該透光性導電層52 的折射率約1.8。 此外，由於該散射膜5内的透光性導電層52及該反射 膜4是具f傳導性。因此，本較佳實施例的結構為該蠢晶 膜3的載子提供了一傳導路徑，以使得該磊晶膜3的載子 得以經由該磊晶膜3傳遞至該透光性導電層52，並朝向設 置於該反射膜4之接觸電極7的一電性流通方向y行進。 此處值得一提的是，由於類鑽碳（DLC)本身的熱傳係數 高；因此，該散射膜5内的柱體51與該類鑽碳膜6在本較 佳實施例中則是扮演著輸送熱能的角色，以使得自該蟲晶 膜3所產生的熱能，得以自該磊晶膜3向該散熱基板2的 熱此輸送方向z經由該等柱體51及類鑽碳膜6傳遞至該 散熱基板2。又值得一提的是，該類鑽碳膜6主要的功效是 在於提供一足夠的厚度以供應散熱，其光穿透率 (transmittance)並不需要如同該等柱體η 一樣高。因此較 200950181 佳地，該類鑽碳膜6的厚度是介於4〇〇 nm〜ι〇〇〇腿之間 :該類錢麵6的光穿透率是小於該等㈣Μ的光穿透率 ;且該類鑽礙膜6是經由電漿辅助化學氣相沉積系統以介 於170C〜350°C之間的沉積溫度所製成。 本較佳實施例之蟲晶膜3所產生的熱能，主要是沿著 該熱能輸送方向z傳遞’而該蟲晶膜3的載子主要是沿著該 電ί±抓通方向y行進。因此，與切技術所提之垂直導通 ❹ 馨 式發光二極體1相比較之下，該散熱基板3可因免除掉雙 重的傳遞負擔而全然地貢獻出熱傳的功效，進而優化整體 的元件性能；另，由嗜石s时，〜士 _ 由日日膜3所產生的載子亦可獨立地 沿者，電性流通方向y行進，以發揮較優異的元件性能。 *紅上所述，本發明電熱分離的發光二極體，可改善發 光二極體之散熱問題亦能同時維持發光二極體整體的元件 性能，故確實能達到本發明之目的。 惟以上所述者，僅為本發明之較佳實施例而已，當不 能以此限定本發明實施之範圍，即大凡依本發明中請專利 圍及發月4明内谷所作之簡單的等效變化與修飾，皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是-正視示意圖，說明現有一種垂直導通式發光 二極體；及 圖是正視不意圖，說明本發明電熱分離的發光二 極體之一較佳實施例。 200950181 【主要元件符號說明】 2 ..........散熱基板 3 ..........蠢晶膜 31.........p-n接面 4 ..........反射膜 5 ..........散射膜 51.........柱體 52.........透光性導電層 6 ..........類鑽碳膜 7 ..........接觸電極 y..........電性流通方向 z...........熱能輸送方向The refractive index is higher than the refractive index of the light-transmitting conductive layer 52. In the preferred embodiment, the iron carbon (DLC) such as (4) 51 is made by a electropolymerization assisted chemical vapor deposition system (PECVD) at a deposition temperature of between 500 t and 6 Torr, and The refractive index of the column 51 is about 2.8; the refractive index of the light-transmitting conductive layer 52 is about 1.8. Further, since the light-transmitting conductive layer 52 and the reflective film 4 in the scattering film 5 are f-conductive. Therefore, the structure of the preferred embodiment provides a conductive path for the carrier of the amorphous film 3 so that the carrier of the epitaxial film 3 can be transferred to the transparent conductive layer 52 via the epitaxial film 3. And proceeding toward an electrical flow direction y of the contact electrode 7 provided in the reflective film 4. It is worth mentioning here that since the heat transfer coefficient of the diamond-like carbon (DLC) itself is high; therefore, the cylinder 51 in the scattering film 5 and the diamond-like carbon film 6 are played in the preferred embodiment. The role of transporting thermal energy is such that thermal energy generated from the crystal film 3 is transmitted from the epitaxial film 3 to the heat transfer direction z of the heat dissipation substrate 2 via the pillars 51 and the diamond-like carbon film 6. To the heat dissipation substrate 2. It is also worth mentioning that the main function of the carbon film 6 is to provide a sufficient thickness to supply heat, and the light transmittance does not need to be as high as the column η. Therefore, compared with 200950181, the thickness of the carbon film 6 is between 4〇〇nm~ι〇〇〇: the light transmittance of the money surface 6 is less than the light transmittance of the (four) Μ And such a barrier film 6 is formed by a plasma assisted chemical vapor deposition system at a deposition temperature of between 170 C and 350 ° C. The thermal energy generated by the insect crystal film 3 of the preferred embodiment is mainly transmitted along the thermal energy transport direction z while the carrier of the insect crystal film 3 mainly travels along the electric chucking direction y. Therefore, compared with the vertical conduction sinusoidal light-emitting diode 1 proposed by the cutting technique, the heat-dissipating substrate 3 can fully contribute to the heat transfer effect by eliminating the double transfer burden, thereby optimizing the overall component. Performance; in addition, when the stone is used, the carrier generated by the solar film 3 can also independently travel along the electrical flow direction y to exhibit superior element performance. * Red, the electrothermally separated light-emitting diode of the present invention can improve the heat dissipation problem of the light-emitting diode and maintain the overall performance of the light-emitting diode as a whole, so that the object of the present invention can be achieved. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent of the patent and the fourth month of the present invention. Variations and modifications are still within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a front elevational view showing a conventional vertical-conducting light-emitting diode; and the drawing is a front view showing a preferred embodiment of the electrothermally separated light-emitting diode of the present invention. 200950181 [Explanation of main component symbols] 2 ..... Heat-dissipating substrate 3 .......... stupid film 31 .... pn junction 4 .. ........Reflective film 5 .....scattering film 51......column 52.........translucent conductive layer 6 ..........Diamond-like carbon film 7 .......... Contact electrode y..........Electrical flow direction z... ..... heat energy transport direction
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