1379450 > «· ' ,* 九、發明說明： - 【發明所屬之技術領域】 本發明是有關於一種發光二極體元件及其發光模組，特 別是指一種高散熱性發光二極體元件及其發光模組。 【先前技術】 目前發光二極體元件的光電轉換效率約只有1〇〜3〇0/。， 大部分的電能在光電轉換的過程中均被浪費轉換成廢熱，而 累積在發光二極體元件内，因此，若無法將累積在發光二極 ® 體元件内的廢熱排出，就會造成發光二極體元件的劣化，降 低發光二極體元件的使用壽命。而以目前發光二極體的光電 轉換效率而言，高功率及大尺寸的發光二極體所產生的廢熱 會更多，因此散熱困難若無法解決，則無法有更大的突破。 現階段發光二極體以藍寶石基板為主，然而因為藍寶石 本身不導電且熱傳導率不高，因此各家廠商均致力於新技術 來改善發光二極體的散熱問題，且方向均為朝向金屬基板進 行研究開發，而其中以金屬為基板且為垂直結構的技術則越 來越受到重視。 由於金屬具有較佳的導電及熱導效能，因此可以改善藍 寶石基板電流不易通過且散熱困難等兩大基本問題，但因為 金屬不透光的特性會減少光的取出，因此通常於基板上會再 加上一層反射鏡提昇光的反射效果，來加強光的取出率。 參閱圖1，目前的垂直結構金屬基板發光二極體具有一 金屬基板21、由該金屬基板21依序向上形成的一反射鏡 22、一發光膜23，及二分別設置在發光膜23頂面與該金屬 5 1379450 - 基板21底面的電極片24，該發光膜23具有一 p型半導體層 231 ( P-cladding layer)、一 η 型半導體層 232 ( n-cladding layer) ’及一夾設於該p、n型半導體層231、232間的發光 層233 ( active layer) ’該二電極片24可配合提供電能至該 發光膜23。 當通以外部電流並經由該二電極片24提供電能到發光 膜23時，光可由該發光膜23發出，而同時在光電轉換過程 中產生的熱能則可藉由該金屬基板21的熱導效能向外排出 • 散熱，同時可藉由反射鏡22將朝向底面的光經反射後實質 向上發光’而提昇發光二極體的亮度。 目前已開發出的以銅合金為金屬基板的垂直結構金屬 基板發光二極體，其散熱效果及亮度雖較一般藍寶石基板結 構要高’然而高功率及大尺寸的發光二極體仍無法僅由該金 屬基板的散熱’而達到預期的功效，因此如何有效克服發光 二極體散熱同時增加亮度的問題，一直是在此技術領域者所 要積極突破解決的重要課題之一。 鲁、【發明内容】 因此，本發明之一目的，即在提供一種高散熱性發光二 極體元件。 再者’本發明的另一目的為提供一種高散熱性發光二極 體元件的發光模組。 於是，本發明高散熱性發光二極體元件是包含一片導熱 座，及一個二極體單元。 該導熱座具有一熱傳基底及一散熱層，該熱傳基底由導 6 熱材料構成，該散熱層以類鑽碳膜為材料由該熱傳基底向上 形成’厚度在5000A〜ιοοοοΑ。 該二極體單元包括一反射鏡、一發光膜、一第一電極 片，及一第二電極片，該反射鏡連接於該散熱層，具有一承 載。卩及電極部，且該反射鏡可導電；該發光膜設置於該承載 部，可在提供電能時發光，該第一、二電極片分別設置在該 發光膜頂面與該電極部而可互相配合提供電能至該發光膜。 再者’本發明高散熱性發光二極體元件的發光模組包含 一片導熱座、複數個二極體單元，及複數組連接單元。 該導熱座包括一由導熱材料構成的熱傳基底，及一設置 在该熱傳基底上的散熱層，該散熱層以類鑽碳膜構成且厚度 在 5000A 〜ΐοοοοΑ。 該等二極體單元是彼此相間隔設置於該導熱座上，該每 一個一極體單元包括一與該散熱層連接的反射鏡，該反射鏡 具有一承載部及一電極部、一設置於該承載部上並可在提供 電能時發光的發光膜、一第一電極片，及一第二電極片，該 第一電極片設置在該發光膜頂面，該第二電極片設置在該電 極部’可相配合提供電能。 該等連接單元可電連接該等第一、二電極片而使該等發 光膜電導通。 本發明之功效在於：藉由與該二極體單元連接並以類鑽 碳膜構成的散熱層，將該發光膜在光電轉換過程中產生的廢 熱’快速地向熱傳基底傳導向外界散出，而達到快速散熱的 效果’另外’也可藉由該等連接單元將複數個設置於該散熱 1379450 座上的二極體單元彼此電連接，形成一高亮度的高散熱性發 光二極體的發光模組。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在以 下配合參考圖式之三個較佳實施例的詳細說明中，將可清楚 的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說明 内谷中’類似的元件是以相同的編號來表示。 參閱圖2’本發明高散熱性發光二極體元件的一第一較 佳實施例，包含一片導熱座3及一個二極體單元4。 該導熱座3包括一由銅為材料，厚度約1〇〇〜15〇μιη所構 成的熱傳基底31，及一設置在該熱傳基底31上的散熱層 32 °玄政熱層32為類鑽碳膜（diamond-like films)，是以電嘴 輔助化學氣相層積法（PECVD)的化學反應，在低於 件下成長’厚度在5〇〇〇A〜ιοοοοΑ，不透光，且具有極佳導 熱效果。 該二極體單元4是設置於該導熱座3上，包括一連接在 該散熱層32上的反射鏡41 ’該反射鏡41具有一承載部411 及一電極部412、一設置於該承載部411上的發光膜42，可 在提供電能時發光、一設置在該發光膜42頂面的第一電極 片43，及一設置在該電極部412上並與該第一電極片43相 配合對該發光膜42提供電能的第二電極片44，該反射鏡41 可由金、鋁、銀、氮化鈦、或氧化鍅等金屬為材料所構成， 用以導電並反射該發光膜42作動發出的光。 8 該發光膜42具有一與該第一電極片43連接的n型半導 體’ 422、- ρ型半導體層421 ’及-失設於該ρ型半導體 層421與該η型半導體層422之間的發光層423。 當施以外部電流於該發光膜42進行光電轉換時，光會 經由該發光層423實質向上發出，而產生的廢熱則會藉由該 散熱層32快速地向該熱傳基底31傳導向外界散出，由於兮 散熱層32為類鑽碳膜，同時含有印3及之混成軌域存 在，具有超高的熱傳導性，故熱可經由該散熱層32快速向 外界傳出，達到快速散熱的效果，而達到本發明的目的。 接著參閱圖3,本發明高散熱性發光二極體元件的一第 二較佳實施例，其結構大致與該第一較佳實施例相似，不同 處在於該發光膜42還具有複數由該ρ型半導體層421底面向 該發光層423方向延伸的環繞面424、複數連接該等環繞面 424頂緣的基面425，該每一環繞面424及該每一基面425 配合界定出一凹孔426，且該等凹孔426的平均深度為 1000〜5000人、平均開口孔徑為卜5μιη，且相鄰的兩凹孔A% 間的距離與該等凹孔426開口的平均孔徑實質相同，藉此讓 該發光膜42與該反射鏡41連接的底面成非平坦的連續面， 而可提升由該發光膜42向下行進的光子的折射及/或散射效 果，並減低因光子產生全反射轉換成内廢熱的機率，有效提 昇該發光二極體元件的發光亮度。 參閲圖4，本發明高散熱性發光二極體元件的一第三較 佳實施例，其結構大致與該第二較佳實施例相似，不同處在 於該發光膜42還具有餘填滿該每一凹孔42㈣高溫類鑽碳 13794501379450 > «· ' , * IX, invention description: - [Technical Field of the Invention] The present invention relates to a light-emitting diode element and a light-emitting module thereof, and more particularly to a high heat-dissipating light-emitting diode element And its lighting module. [Prior Art] At present, the photoelectric conversion efficiency of the light-emitting diode element is only about 1 〇 to 3 〇 0 /. Most of the electrical energy is wasted into waste heat during the photoelectric conversion process, and is accumulated in the light-emitting diode element. Therefore, if the waste heat accumulated in the light-emitting diode component cannot be discharged, it will cause light emission. The deterioration of the diode element reduces the service life of the light-emitting diode element. In terms of the photoelectric conversion efficiency of the current light-emitting diodes, the high-power and large-sized light-emitting diodes generate more waste heat, so if the heat-dissipation is difficult to solve, there is no greater breakthrough. At present, the light-emitting diodes are mainly sapphire substrates. However, since sapphire itself is not conductive and the thermal conductivity is not high, various manufacturers are working on new technologies to improve the heat dissipation of the light-emitting diodes, and the directions are toward the metal substrate. Research and development, in which the metal as the substrate and the vertical structure of the technology is getting more and more attention. Since the metal has better electrical conductivity and thermal conductivity, it can improve two basic problems such as the sapphire substrate current is difficult to pass and the heat dissipation is difficult. However, since the metal opaque property reduces the light extraction, it is usually on the substrate. A layer of mirror is added to enhance the reflection of light to enhance the light extraction rate. Referring to FIG. 1, a current vertical structure metal substrate light-emitting diode has a metal substrate 21, a mirror 22 formed by the metal substrate 21 in sequence, an illuminating film 23, and two electrodes respectively disposed on the top surface of the luminescent film 23. And the metal sheet 5 1379450 - the electrode sheet 24 on the bottom surface of the substrate 21, the luminescent film 23 has a p-cladding layer 231 (n-cladding layer) ′ and an n-cladding layer ′ The light-emitting layer 233 between the p- and n-type semiconductor layers 231 and 232 can be used to supply electric energy to the light-emitting film 23. When an external current is supplied and electric energy is supplied to the luminescent film 23 via the two-electrode piece 24, light can be emitted from the luminescent film 23, and at the same time, thermal energy generated during the photoelectric conversion process can be thermally tuned by the metal substrate 21. The heat is discharged outwardly, and the brightness of the light-emitting diode can be improved by reflecting the light toward the bottom surface by the mirror 22 to substantially emit light. At present, a vertical structure metal substrate light-emitting diode with a copper alloy as a metal substrate has a higher heat dissipation effect and brightness than a general sapphire substrate structure. However, a high-power and large-sized light-emitting diode cannot be used only by The heat dissipation of the metal substrate has achieved the desired effect, so how to effectively overcome the heat dissipation of the LED and increase the brightness has been one of the important issues that the technical field has to actively solve. Lu, [Description of the Invention] Accordingly, it is an object of the present invention to provide a highly heat-dissipating light-emitting diode element. Further, another object of the present invention is to provide a light-emitting module of a highly heat-dissipating light-emitting diode element. Thus, the high heat dissipation LED component of the present invention comprises a heat conducting block and a diode unit. The heat conducting base has a heat transfer substrate and a heat dissipation layer. The heat transfer substrate is made of a conductive material. The heat dissipation layer is formed of a diamond-like carbon film from the heat transfer substrate to have a thickness of 5000A to ιοοοο. The diode unit includes a mirror, a light-emitting film, a first electrode sheet, and a second electrode sheet. The mirror is connected to the heat dissipation layer and has a load. And the electrode portion, wherein the mirror is electrically conductive; the illuminating film is disposed on the carrying portion to emit light when the electric energy is supplied, and the first and second electrode sheets are respectively disposed on the top surface of the illuminating film and the electrode portion to be mutually Cooperating to provide electrical energy to the luminescent film. Furthermore, the light-emitting module of the high heat-dissipating light-emitting diode element of the present invention comprises a heat-conducting block, a plurality of diode units, and a multi-array connection unit. The heat conducting base comprises a heat transfer substrate composed of a heat conductive material, and a heat dissipation layer disposed on the heat transfer substrate, the heat dissipation layer being formed by a diamond-like carbon film and having a thickness of 5000A to ΐοοοο. The diode units are spaced apart from each other on the heat conducting seat, and each of the body units includes a mirror connected to the heat dissipation layer, the mirror has a bearing portion and an electrode portion, and is disposed on the a light-emitting film on the carrying portion and capable of emitting light when supplying electric energy, a first electrode sheet, and a second electrode sheet, wherein the first electrode sheet is disposed on a top surface of the light-emitting film, and the second electrode sheet is disposed on the electrode The Department' can be used to provide electrical energy. The connecting units can electrically connect the first and second electrode sheets to electrically conduct the light emitting films. The effect of the invention is that the waste heat generated by the photoelectric conversion process during the photoelectric conversion process is rapidly transmitted to the heat transfer substrate to the outside by the heat dissipation layer which is connected to the diode unit and is formed by a diamond-like carbon film. The effect of achieving rapid heat dissipation is 'other', and the plurality of diode units disposed on the heat sink 1379450 can be electrically connected to each other to form a high-brightness, high-heat-dissipating light-emitting diode. Light module. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. Before the present invention is described in detail, it is to be noted that in the following description, like elements are denoted by the same reference numerals. Referring to Figure 2', a first preferred embodiment of the high heat dissipation LED component of the present invention comprises a heat conducting block 3 and a diode unit 4. The heat conducting base 3 comprises a heat transfer substrate 31 made of copper and having a thickness of about 1 〇〇 15 15 μm, and a heat dissipation layer 32 disposed on the heat transfer substrate 31. Diamond-like films, which are chemically reacted by electrode-assisted chemical vapor deposition (PECVD), grow below the thickness of '5〇〇〇A~ιοοοοΑ, opaque, and Has excellent thermal conductivity. The diode unit 4 is disposed on the heat conducting base 3, and includes a mirror 41 connected to the heat dissipation layer 32. The mirror 41 has a bearing portion 411 and an electrode portion 412, and is disposed on the bearing portion. The illuminating film 42 on the 411 is illuminating when the electric energy is supplied, the first electrode sheet 43 disposed on the top surface of the illuminating film 42 is disposed on the electrode portion 412 and is matched with the first electrode sheet 43. The illuminating film 42 is provided with a second electrode sheet 44 for electric energy. The reflecting mirror 41 may be made of a metal such as gold, aluminum, silver, titanium nitride or yttrium oxide for conducting and reflecting the luminescent film 42. Light. The luminescent film 42 has an n-type semiconductor '422, a p-type semiconductor layer 421' connected to the first electrode piece 43, and is disposed between the p-type semiconductor layer 421 and the n-type semiconductor layer 422. Light emitting layer 423. When an external current is applied to the luminescent film 42 for photoelectric conversion, light is substantially emitted upward through the luminescent layer 423, and the generated waste heat is quickly transmitted to the heat transfer substrate 31 to the outside by the heat dissipation layer 32. Since the heat dissipation layer 32 is a diamond-like carbon film and contains the printed 3 and the mixed track domain, and has a super high thermal conductivity, heat can be quickly transmitted to the outside through the heat dissipation layer 32 to achieve rapid heat dissipation. To achieve the object of the present invention. Referring to FIG. 3, a second preferred embodiment of the high heat dissipation LED component of the present invention has a structure substantially similar to that of the first preferred embodiment, except that the luminescent film 42 further has a plurality of ρ. a bottom surface 424 extending from the bottom of the semiconductor layer 421 toward the light-emitting layer 423, and a base surface 425 connected to the top edge of the surrounding surface 424. The surrounding surface 424 and each of the base surfaces 425 cooperate to define a recessed hole. 426, and the recessed holes 426 have an average depth of 1000 to 5000 persons, and the average opening aperture is 5 μm, and the distance between the adjacent two recessed holes A% is substantially the same as the average aperture of the openings of the recessed holes 426. Therefore, the bottom surface of the luminescent film 42 connected to the mirror 41 is a non-flat continuous surface, and the refraction and/or scattering effect of the photon traveling downward from the luminescent film 42 can be improved, and the total reflection conversion due to photons can be reduced. The probability of internal waste heat is effective to increase the light-emitting brightness of the light-emitting diode element. Referring to FIG. 4, a third preferred embodiment of the high heat dissipation LED component of the present invention has a structure substantially similar to that of the second preferred embodiment, except that the luminescent film 42 further has a filling portion. Each recessed hole 42 (four) high temperature diamond-like carbon 1379450
=?之Τ’及'夾設於該P型半導體層421底面及該承载 Λ s，且由氧化銦錫（ΙΤΟ)為材料所構成的透明導電岸 似錢明導電層428與該p型半導體層421為歐姆接觸且 、好的電机擴散機制，該每一高溫類鑽碳膜結構奶為 使用PECVD方法，在600°c高溫成長的可透光的類鑽碳 d職。nd-hke)，因此填入該等凹孔⑽内可藉由折射率的 差/、而增加折射及/或散射效果卜部電流於該發光膜 42進行光電轉換時，部分的光會經由該發光層伯直接向上 4出而另一部份向下行進的光在接觸到該等環繞面424或 通過該等高溫類鑽碳膜結構427日夺，藉由該等圍繞面似盘 高溫類鑽碳膜結構427改變光線接觸後反射及/或折射後的、 角度’可將光藉由散射及/或折射效果而再實質由該發光膜 42向上發出’以提高亮度；而同時’產生的廢熱則會藉由該 散熱層32快速地經過熱傳基底31肖夕卜界散丨，而可同時達 到散熱及Φζ幵s亥發光二極體元件亮度的效果。 參閱圖5,另外，可以上述高散熱性發光二極體元件為 基礎，製作出亮度更高的高散熱性發光二極體元件的發光模 組，該高散熱性發光二極體元件的發光模組包含一片導熱座 3、複數個二極體單元4,及複數組連接單元5。 該導熱座3包括一由銅為導熱材料所構成，厚度約 100〜150μιη的熱傳基底31，及一設置在該熱傳基底3ι上， 厚度在5〇〇〇人〜10000人的散熱層32。 於該導熱座3 二較佳實施例 該等一極體早元4為彼此相間隔排列設置 上，該每一二極體單元4其組成、結構與該第 10 相同，故在此不再多加說明。 縣-連接單元5具有-由二氧切（Si〇2)為材料所構 成的絕緣>| 51，及-由鋼為材料構成的導電層52，該絕緣 層一51自其Λ 一個二極體單元4的反射鏡41側面延伸而遮覆 該二極體單元4與該另—相鄰之二極體單元4間的散熱層^ 表面’並向上延伸遮覆該相鄰之二極體單& 4 @反射鏡Μ 與相對4 __極體單元4的側面，該導電層52設置在該絕緣 層51上且相反兩端分別電連接該二極體單元*的第二電極 片44與該相鄰之二極體單元4的第—電極片43，而可將該 等相鄰的二極體單元4彼此串聯。 田通以外。卩電流時’藉由該等連接單元5的連結導通而 能同時提供電能至該每一個二極體單元4同時作動，除了可 達到散熱及亮度提昇的效果外，也因該等二極體單元彳為彼 此串聯電連接’因此也可降低封裝時外接導線的數目，提昇 製程的便利性H該連接單元5亦可以連接該等相鄰的 極體單元4上的同相電極片，而得以使該等二極體單元4 間以並聯方式電連接，亦可達到相同的效果，由於此等並聯 電連接技術為業界所週知，在此*多加說明。 ‘上所述’目前垂直式發光二極體使用的基板為導熱性 佳的金屬（例如鋼或鋼合金），導熱效果雖然比藍寶石基板 好然而仍不足以應付高功率及大尺寸發光二極體元件的散 熱需求。本發明由-與該二極體單元連接且導熱性極佳的類 鑽炭膜為熱導材料’藉由其優越的熱導性能（其熱導效果為銅 的—倍）將產生的廢熱快速的移除，而大幅的提昇散熱效率； 1379450And a transparent conductive conductive layer 428 and a p-type semiconductor which are sandwiched between the bottom surface of the P-type semiconductor layer 421 and the carrier Λ s and made of indium tin oxide (ITO). Layer 421 is an ohmic contact and a good motor diffusion mechanism. Each high temperature diamond-like carbon film structure milk is a permeable, diamond-like carbon that grows at a high temperature of 600 ° C using a PECVD method. Nd-hke), so that the recesses (10) can be filled by the difference in refractive index/, and the refractive and/or scattering effects can be increased. When the photo-electric conversion is performed on the luminescent film 42, part of the light passes through the luminescence. The light that travels straight up and out of the other layer is in contact with the surrounding surface 424 or through the high temperature diamond-like carbon film structure 427, by the surrounding surface-like high temperature diamond-like carbon The film structure 427 changes the angle of reflection and/or refraction after light contact, and the light can be substantially emitted from the luminescent film 42 by the scattering and/or refracting effect to increase the brightness; and at the same time, the generated waste heat is The heat dissipation layer 32 can quickly pass through the heat transfer substrate 31 to achieve the effect of heat dissipation and brightness of the Φ ζ幵 发光 LED light-emitting diode element. Referring to FIG. 5, in addition, the light-emitting module with higher brightness and high heat-dissipating light-emitting diode element can be fabricated based on the high heat-dissipating light-emitting diode element, and the light-emitting mode of the high heat-dissipating light-emitting diode element can be The group comprises a heat conducting seat 3, a plurality of diode units 4, and a complex array connecting unit 5. The heat conducting base 3 comprises a heat transfer substrate 31 made of copper as a heat conductive material and having a thickness of about 100 to 150 μm, and a heat dissipation layer 32 disposed on the heat transfer substrate 3 and having a thickness of 5 to 10,000. . In the preferred embodiment of the thermally conductive seat 3, the first polar bodies 4 are arranged at intervals, and each of the diode units 4 has the same composition and structure as the tenth, so no more is added here. Description. The county-connecting unit 5 has an insulating layer composed of a material of dioxo (Si〇2), and a conductive layer 52 made of a material of steel, the insulating layer 51 is self-contained The mirror 41 of the body unit 4 extends laterally to cover the surface of the heat dissipation layer between the diode unit 4 and the adjacent diode unit 4 and extends upward to cover the adjacent diode & 4 @Mirror Μ and the side of the opposite 4 __ pole unit 4, the conductive layer 52 is disposed on the insulating layer 51 and the opposite ends are electrically connected to the second electrode sheet 44 of the diode unit*, respectively The first electrode sheets 43 of the adjacent diode units 4, and the adjacent diode units 4 may be connected in series to each other. Outside of Tiantong. When the current is ', the power can be simultaneously supplied to each of the diode units 4 by the connection of the connecting units 5, in addition to the effect of heat dissipation and brightness enhancement, and also due to the diode units.彳Electrical connection in series with each other' therefore also reduces the number of external wires during packaging, and improves the convenience of the process. H The connection unit 5 can also connect the in-phase electrode sheets on the adjacent pole units 4, thereby enabling the The same effect can be achieved by electrically connecting the diode units 4 in parallel, as these parallel electrical connection techniques are well known in the art, and are described here. The above-mentioned vertical vertical light-emitting diode uses a substrate with good thermal conductivity (such as steel or steel alloy). Although the thermal conductivity is better than that of the sapphire substrate, it is still insufficient to cope with high-power and large-size light-emitting diodes. The heat dissipation requirements of the components. The present invention consists of a carbon-like carbon film which is connected to the diode unit and has excellent thermal conductivity as a thermal conductive material. The waste heat generated by its superior thermal conductivity (the thermal conductivity of which is copper-fold) is fast. Removal, while greatly improving heat dissipation efficiency; 1379450
再猎由该等環繞面及高溫類鑽碳膜結構對光的折射及/ 或散射而讓光實質向上由該頂面發出而可同時提高發光二 極體疋件的亮度；而藉由該二極體單元所製作的高散叛性發 光二極體元件的發光模组，不僅有散熱及亮度提昇的效果， 也因該等二極體元件為彼此串聯電連接，因此也可降低封裝 時外接導線的數目，簡化製程，故確實能達成本發明之目的: 惟以上所述者，僅為本發明之較佳實施例而已，當不能 以此限定本發明實施之範@，即大凡依本發㈣請專利範圍 及發明說明内容所作之簡單的等效變化與修飾，皆仍屬本發 明專利涵蓋之範圍阿。 【圖式簡單說明】 圖1是一前視示意圖，說明習知垂直結構金屬基板發光 二極體； 圖2是一前視示意圖，說明本發明高散熱性發光二極體 元件的第一較佳實施例；By refracting and/or scattering the light by the surrounding surface and the high temperature diamond-like carbon film structure, the light is substantially emitted upward from the top surface to simultaneously increase the brightness of the light emitting diode element; The light-emitting module of the high-relenting light-emitting diode component produced by the polar body unit not only has the effects of heat dissipation and brightness enhancement, but also because the two-pole components are electrically connected in series to each other, thereby also reducing the external connection during packaging. The number of the wires, the process is simplified, and the object of the present invention can be achieved. However, the above is only a preferred embodiment of the present invention, and the present invention cannot be limited thereto. (4) The simple equivalent changes and modifications made by the scope of the patent and the content of the invention are still covered by the patent of the invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front view showing a conventional vertical structure metal substrate light-emitting diode; FIG. 2 is a front view showing a first preferred embodiment of the high heat dissipation LED device of the present invention. Embodiment
圖3是一前視示意圖，說明本發明高散熱性發光二極體 元件的第二較佳實施例； 圖4是一前視示意圖，說明本發明高散熱性發光二極體 元件的第三較佳實施例；及 圖5是一前視示意圖，說明本發明高散熱性發光二極體 元件的發光模組的較佳實施例。 12 1379450 【主要元件符號說明】 3 導熱座 424 環繞面 31 熱傳基底 425 基面 32 散熱層 426 凹孔 4 二極體單元 427 高溫類鑽碳膜結構 41 反射鏡 428 透明導電層 411 承載部 43 第一電極片 412 電極部 44 第二電極片 42 發光膜 5 連接單元 421 P型半導體層 51 絕緣層 422 η型半導體層 52 導電層 423 發光層 133 is a front elevational view showing a second preferred embodiment of the high heat dissipation LED component of the present invention; FIG. 4 is a front elevational view showing the third comparison of the high heat dissipation LED component of the present invention. A preferred embodiment; and FIG. 5 is a front view showing a preferred embodiment of the light-emitting module of the high heat-dissipating light-emitting diode element of the present invention. 12 1379450 [Main component symbol description] 3 Thermal conduction seat 424 Surrounding surface 31 Heat transfer base 425 Base surface 32 Heat dissipation layer 426 Recessed hole 4 Diode unit 427 High temperature diamond-like carbon film structure 41 Mirror 428 Transparent conductive layer 411 Bearing portion 43 First electrode sheet 412 electrode portion 44 second electrode sheet 42 light-emitting film 5 connection unit 421 p-type semiconductor layer 51 insulating layer 422 n-type semiconductor layer 52 conductive layer 423 light-emitting layer 13