CN101320717A - Thermoelectricity separated light emitting diode seat body and its cooling unit structure - Google Patents
Thermoelectricity separated light emitting diode seat body and its cooling unit structure Download PDFInfo
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- CN101320717A CN101320717A CNA2007101657006A CN200710165700A CN101320717A CN 101320717 A CN101320717 A CN 101320717A CN A2007101657006 A CNA2007101657006 A CN A2007101657006A CN 200710165700 A CN200710165700 A CN 200710165700A CN 101320717 A CN101320717 A CN 101320717A
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- emitting diode
- base material
- heat
- light
- operative connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Abstract
The invention provides a thermoelectricity-separated luminescent diode base and heat radiation unit structure thereof. The thermoelectricity-separated luminescent diode base comprises a heat radiation unit and a base unit, characterized in that the heat radiation unit is in a thermoelectricity-separated structure with insulation and radiation base material, and a first electric conduction part and a first heat conduction combination part are formed on one side surface of the insulation and radiation base material. The thermoelectric separation is also performed when several luminescent diodes are combined with the base unit as the heat radiation unit is in a thermoelectricity-separated structure.
Description
Technical field
The present invention relates to a kind of thermoelectric light emitting diode seat body and heat-sink unit structure thereof of separating, particularly relate to a kind of light emitting diode seat body and heat-sink unit structure thereof of separating in order to the thermoelectricity of carrying High Power LED.
Background technology
Because the manufacturing technology of High Power LED wafer is constantly progressive, so the luminous efficiency of LED wafer also constantly promotes, and make the applicable scope of light-emitting diode also more and more widely, but but failing effectively at present, the input power of light-emitting diode converts luminous energy to, be to convert most input power to heat energy on the contrary, so if can make light-emitting diode base structure that the path of heat conduction and conduction is provided respectively, then can improve the heat-transfer rate of light-emitting diode base structure, and then can convert most input power to luminous energy, can promote the luminous efficiency of light-emitting diode.
Announce the 7th, 098 as United States Patent (USP), a kind of light-emitting diode base structure that operates under the high temperature that discloses in No. 483, it comprises a metal substrate, a ceramic substrate and a light-emitting diode.Metal substrate comprises a hot link plate and a pair of electrodes, and hot link plate and electrode are arranged at the metal substrate below.Ceramic substrate is arranged on the metal substrate, and light-emitting diode is then solid brilliant on metal substrate or ceramic substrate.Light-emitting diode is via metal substrate operative connection hot link plate, and electrode be electrically connected at below electric connection board.Hot-fluid also can be connected in the hot link plate and strengthen heat conduction by many heat carrier heat conduction, makes heat can quicken to conduct.
Though the light-emitting diode base structure of above-mentioned exposure can provide the thermoelectric approach that separates, and then quickening radiating rate, but above-mentioned light-emitting diode base structure only can loading end mo(u)ld top half light-emitting diode (Face-up LED), and can't carry many metal substrate vertical LEDs (Vertical LEDMental alloyed Substrate, VLEDMS).Because the metal substrate vertical LED has adopted the vertical current path, its N utmost point electrode is positioned at the light-emitting diode top, and P utmost point electrode is positioned at the light-emitting diode below, and utilize the material of metal as substrate, so when many metal substrate vertical LEDs are arranged in the light-emitting diode base structure simultaneously, the metal substrate vertical LED is during by heat carrier and metal substrate operative connection, the phenomenon that will be short-circuited.
This shows that above-mentioned existing light-emitting diode base structure obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found light emitting diode seat body and heat-sink unit structure thereof that a kind of novel thermoelectricity separates, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing light-emitting diode base structure exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding light emitting diode seat body and the heat-sink unit structure thereof that a kind of novel thermoelectricity separates, can improve general existing light-emitting diode base structure, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
The objective of the invention is to, overcome the defective that existing light-emitting diode base structure exists, and the light emitting diode seat body and the heat-sink unit structure thereof that provide a kind of novel thermoelectricity to separate, it is that heat-sink unit is designed to a kind of thermoelectric separated structures, even technical problem to be solved is to make it be provided with many light-emitting diodes in light emitting diode seat body, also do not have the problem that heat, electricity can't be separated, be very suitable for practicality.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of thermoelectric light-emitting diode base structure that separates that the present invention proposes, it comprises: a heat-sink unit, and it has an insulating radiation base material, is formed with at least one first conductive part and at least one first operative connection portion on the side of this insulating radiation base material; And a pedestal unit, it comprises: a pedestal body has a die region and a bottom surface; Many heat carriers, it penetrates this pedestal body, again a first end of those heat carriers in order to the light-emitting diode operative connection that is arranged at this die region, and a second end of those heat carriers in order to this first operative connection portion operative connection; And at least one electric conductor, being formed on this pedestal body, it has one second conductive part and is arranged at this die region place, have one the 3rd conductive part again and be arranged on this bottom surface, and the 3rd conductive part system electrically connects with this first conductive part.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light-emitting diode base structure, wherein said insulating radiation base material is in conjunction with an insulating barrier by a metal base.
Aforesaid light-emitting diode base structure, wherein said insulating barrier are an alumina layer.
Aforesaid light-emitting diode base structure, wherein said insulating barrier are an aln layer.
Aforesaid light-emitting diode base structure, wherein said insulating barrier are a class diamond carbon-coating.
Aforesaid light-emitting diode base structure, wherein said insulating radiation base material is an aluminum oxide base material.
Aforesaid light-emitting diode base structure, wherein said insulating heat-conductive base material are an aluminium nitride base material.
Aforesaid light-emitting diode base structure, wherein said pedestal body is a printed circuit board (PCB).
Aforesaid light-emitting diode base structure, wherein said pedestal body is a ceramic substrate.
Aforesaid light-emitting diode base structure, wherein said heat-sink unit and this pedestal body are that the welding material with one tin/antimony or a tin/lead is a bond material.
Aforesaid light-emitting diode base structure, it further has at least one second operative connection portion, it is this second end operative connection of those heat carriers, and again with this first heat-conducting part operative connection.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of thermoelectric heat-sink unit that separates that the present invention proposes, it comprises: an insulating radiation base material; At least one first conductive part is formed on the side of this insulating radiation base material; And at least one first operative connection portion, be formed on this side.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid heat-sink unit, wherein said insulating radiation base material is in conjunction with an insulating barrier by a metal base.
Aforesaid heat-sink unit, wherein said insulating barrier are an alumina layer.
Aforesaid heat-sink unit, wherein said insulating barrier are an aln layer.
Aforesaid heat-sink unit, wherein said insulating barrier are a class diamond carbon-coating.
Aforesaid heat-sink unit, wherein said insulating radiation base material is an aluminum oxide base material.
Aforesaid heat-sink unit, wherein said insulating heat-conductive base material are an aluminium nitride base material.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, major technique of the present invention thes contents are as follows:
In order to achieve the above object, the invention provides a kind of thermoelectric light-emitting diode base structure that separates, it comprises: a heat-sink unit, and it has an insulating radiation base material, is formed with at least one first conductive part and at least one first operative connection portion on the side of insulating radiation base material; And a pedestal unit, it comprises: a pedestal body has a die region and a bottom surface; Many heat carriers, it penetrates the pedestal body, again a first end of heat carrier in order to the light-emitting diode operative connection that is arranged at die region, and a second end of heat carrier in order to the first operative connection portion operative connection; And at least one electric conductor, being formed on the pedestal body, it has one second conductive part and is arranged at the die region place, and have one the 3rd conductive part again and be arranged on the bottom surface, and the 3rd conductive part and the electric connection of first conductive part.
In addition, in order to achieve the above object, the present invention provides a kind of thermoelectric heat-sink unit that separates in addition, and it comprises: an insulating radiation base material; At least one first conductive part is formed on the side of insulating radiation base material; And at least one first operative connection portion, be formed on the side.
By technique scheme, thermoelectric light emitting diode seat body and the heat-sink unit structure thereof of separating of the present invention has following advantage and beneficial effect at least:
One, many light-emitting diodes can be set in light emitting diode seat body, also not have the problem that heat, electricity can't be separated.
Two, select for use lower-cost material as the insulating radiation base material, thermoelectric effect of separating also can be arranged, can significantly reduce manufacturing cost.
In sum, the present invention is a kind of thermoelectric light emitting diode seat body and heat-sink unit structure thereof of separating.The thermoelectric light emitting diode seat body that separates comprises heat-sink unit and pedestal unit, wherein heat-sink unit is a kind of thermoelectric separated structures, it has the insulating radiation base material, and is formed with first conductive part and the first operative connection portion on a side of insulating radiation base material.Because heat-sink unit is a kind of thermoelectric separated structures, so when many light-emitting diodes are incorporated into the pedestal unit, also can carry out thermoelectricity and separate.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on the structure of product or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing light-emitting diode base structure has the outstanding effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the enforcement illustration of a kind of thermoelectric light-emitting diode base structure that separates of the present invention.
Fig. 2 is that the section of a kind of thermoelectric light-emitting diode base structure that separates of the present invention is implemented illustration.
Fig. 3 is the enforcement illustration of a kind of thermoelectric heat-sink unit that separates of the present invention.
Fig. 4 schemes in conjunction with the embodiments for the decomposition of a kind of thermoelectric light-emitting diode base structure that separates of the present invention.
10: light-emitting diode base structure 11: heat-sink unit
111: 112: the first conductive parts of insulating radiation base material
113: the first operative connection portions 114: metal base
115: insulating barrier 12: the pedestal unit
121: pedestal body 122: heat carrier
123: electric conductor 124: die region
125: 126: the second operative connection portions in bottom surface
128: the three conductive parts of 127: the second conductive parts
20: light-emitting diode 21: substrate
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, light emitting diode seat body and its embodiment of heat-sink unit structure, structure, feature and effect thereof that the thermoelectricity that foundation the present invention is proposed separates, describe in detail as after.
Fig. 1 is the enforcement illustration of a kind of thermoelectric light-emitting diode base structure 10 that separates of the present invention.Fig. 2 is that the section of a kind of thermoelectric light-emitting diode base structure 10 that separates of the present invention is implemented illustration.Fig. 3 is the enforcement illustration of a kind of thermoelectric heat-sink unit 11 that separates of the present invention.Fig. 4 schemes in conjunction with the embodiments for the decomposition of a kind of thermoelectric light-emitting diode base structure 10 that separates of the present invention.
As shown in Figure 1, present embodiment is a kind of thermoelectric light-emitting diode base structure 10 that separates, and it comprises: a heat-sink unit 11; An and pedestal unit 12.
As shown in Figure 2, heat-sink unit 11, it comprises an insulating radiation base material 111; At least one first conductive part 112; And at least one first operative connection portion 113.
Insulating radiation base material 111, it can be an aluminum oxide base material, an aluminium nitride base material or a carborundum (SiC) base material, but owing to the manufacturing cost of the preferable aluminum oxide base material of heat-conducting effect is higher, so insulating radiation base material 111 also can be selected the lower metal base of manufacturing cost 114 for use, and on insulating radiation base material 111 in conjunction with an insulating barrier 115.
As shown in Figure 2, in conjunction with the reason of insulating barrier 115 is to have placed many metal substrate vertical LEDs 20 in pedestal unit 12 time because if be, because the substrate 21 of metal substrate vertical LED 20 also is a metal material, and for fear of many metal substrate vertical LEDs 20 meeting and 114 phenomenons that are short-circuited of metal base after utilizing the routing technology to be electrically connected to each other, so present embodiment is to be electrically insulated in order to provide in conjunction with insulating barrier 115, and can guarantee to be provided with the phenomenon that many metal substrate vertical LEDs 20 can not be short-circuited when light-emitting diode base structure 10 on metal base 114.
Insulating barrier 115 on the metal base 114 not only will have the characteristic that is electrically insulated, also to have good heat-conducting effect simultaneously, therefore the material of insulating barrier 115 can be selected aluminium oxide, aluminium nitride or class diamond carbon (Diamond-Like Carbon for use, DLC), and can utilize coating technique that insulating barrier 115 is formed on the metal substrate, for example class diamond carbon-coating can utilize physical vapor Shen to amass technology (PhysicalVapor Deposition PVD) is plated on the metal base 114.So can not only make insulating radiation base material 111 have good heat-conducting effect, also can reduce manufacturing cost.
As shown in Figure 3, first conductive part 112, it is formed on the side of insulating radiation base material 111, and is positioned at the edge of insulating radiation base material 111, in order to electrically to combine with the 3rd conductive part 128 of pedestal unit 12.As shown in Figure 1, the wherein some of first conductive part 112 exposes to outside the pedestal unit 12, in order to electrically connecting with other light-emitting diode base structures, and provides the conduction approach of heat-sink unit 11.
As shown in Figure 2, the first operative connection portion 113 is formed on the insulating radiation base material 111, and is positioned at the same side with first conductive part 112, and is positioned at the zone line near insulating radiation base material 111.Be not in contact with one another each other between any two first operative connection portions 113, and arbitrary first operative connection portion 113 also is not in contact with one another with first conductive part 112.The first operative connection portion 113 mainly is in order to independently heat conduction approach to be provided, and provides by the first operative connection portion 113 and independently to conduct electricity approach, and institute is so that heat-sink unit 11 becomes thermoelectric separated structures.
In order further to improve the heat-transfer rate of 113 in the heat carrier 122 and the first operative connection portion again, can increase at least one second operative connection portion 126 operative connection again behind the second end of heat carrier 122, again with the second operative connection portion 126 and the first operative connection portion, 113 operative connection, increase the second end of heat carrier 122 and the contact area of the first operative connection portion 113 whereby, and improve the speed of the first operative connection portion 113 that heat carrier 122 is conducted heat to.
As shown in Figure 4, between heat-sink unit 11 and the pedestal body 121 respectively by first conductive part 112 corresponding to the 3rd conductive part 128, and the first operative connection portion 113 mutually combines corresponding to the second operative connection portion 126.Heat-sink unit 11 can be combined as a whole by solder technology and pedestal body 121, and employed bond material can be the welding material of one tin/antimony or a tin/lead, and make first conductive part 112 be electrically connected at the 3rd conductive part 128, and the first operative connection portion, 113 operative connection are in the second operative connection portion 126, and then make light-emitting diode base structure 10 become a kind of thermoelectric separated structures.
By the approach that heat conduction and conduction are provided respectively, light-emitting diode base structure 10 can be gone out thermal conductance more apace and away from light-emitting diode 20, and make light-emitting diode 20 can not be subjected to heat influence and reduce luminous efficiency, but and the light-emitting diode base structure 10 of present embodiment loading end mo(u)ld top half light-emitting diode 20 not only, also can carry many metal substrate vertical LEDs 20 simultaneously, and then make the light-emitting diode base structure 10 of present embodiment have range of application widely.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (11)
1, a kind of thermoelectric light-emitting diode base structure that separates is characterized in that it comprises:
One heat-sink unit, it has an insulating radiation base material, is formed with at least one first conductive part and at least one first operative connection portion on the side of this insulating radiation base material; And
One pedestal unit, it comprises:
One pedestal body has a die region and a bottom surface;
Many heat carriers, it penetrates this pedestal body, again a first end of those heat carriers in order to the light-emitting diode operative connection that is arranged at this die region, and a second end of those heat carriers in order to this first operative connection portion operative connection; And
At least one electric conductor is formed on this pedestal body, and it has one second conductive part and is arranged at this die region place, have one the 3rd conductive part again and be arranged on this bottom surface, and the 3rd conductive part system electrically connects with this first conductive part.
2, light-emitting diode base structure according to claim 1 is characterized in that wherein this insulating radiation base material is in conjunction with an insulating barrier by a metal base.
3, light-emitting diode base structure according to claim 2 is characterized in that wherein this insulating barrier is an alumina layer, an aln layer or a class diamond carbon-coating.
4, light-emitting diode base structure according to claim 1 is characterized in that wherein this insulating radiation base material is an aluminum oxide base material, an aluminium nitride base material or a silicon carbide base material.
5, light-emitting diode base structure according to claim 1 is characterized in that wherein this pedestal body is a printed circuit board (PCB) or a ceramic substrate.
6, light-emitting diode base structure according to claim 1 is characterized in that wherein this heat-sink unit and this pedestal body are that welding material with one tin/antimony or a tin/lead is a bond material.
7, light-emitting diode base structure according to claim 1 is characterized in that it further has at least one second operative connection portion, and it is this second end operative connection with those heat carriers, and with this first operative connection portion operative connection.
8, a kind of thermoelectric heat-sink unit that separates is characterized in that it comprises:
One insulating radiation base material;
At least one first conductive part is formed on the side of this insulating radiation base material; And
At least one first operative connection portion is formed on this side.
9, heat-sink unit according to claim 8 is characterized in that wherein this insulating radiation base material is in conjunction with an insulating barrier by a metal base.
10, heat-sink unit according to claim 9 is characterized in that wherein this insulating barrier is an alumina layer, an aln layer or a class diamond carbon-coating.
11, heat-sink unit according to claim 8 is characterized in that wherein this insulating radiation base material is an aluminum oxide base material, an aluminium nitride base material or a silicon carbide base material.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101657006A CN101320717A (en) | 2007-10-31 | 2007-10-31 | Thermoelectricity separated light emitting diode seat body and its cooling unit structure |
| CN2008101712332A CN101404266B (en) | 2007-10-31 | 2008-10-27 | Thermoelectricity separated light emitting diode seat body and its cooling unit structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2007101657006A CN101320717A (en) | 2007-10-31 | 2007-10-31 | Thermoelectricity separated light emitting diode seat body and its cooling unit structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101320717A true CN101320717A (en) | 2008-12-10 |
Family
ID=40180680
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101657006A Pending CN101320717A (en) | 2007-10-31 | 2007-10-31 | Thermoelectricity separated light emitting diode seat body and its cooling unit structure |
| CN2008101712332A Expired - Fee Related CN101404266B (en) | 2007-10-31 | 2008-10-27 | Thermoelectricity separated light emitting diode seat body and its cooling unit structure |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101712332A Expired - Fee Related CN101404266B (en) | 2007-10-31 | 2008-10-27 | Thermoelectricity separated light emitting diode seat body and its cooling unit structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN101320717A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034920A (en) * | 2010-10-08 | 2011-04-27 | 上海衡世光电科技有限公司 | Novel thermoelectric separation bracket for light-emitting diode (LED) surface mounted device (SMD) |
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN104009028A (en) * | 2014-05-26 | 2014-08-27 | 上海信耀电子有限公司 | Integrated package method and structure of high-power LED with ceramic substrate and heat dissipation substratum |
| WO2021093568A1 (en) * | 2019-11-12 | 2021-05-20 | 深圳市绎立锐光科技开发有限公司 | Ceramic substrate and led light source |
-
2007
- 2007-10-31 CN CNA2007101657006A patent/CN101320717A/en active Pending
-
2008
- 2008-10-27 CN CN2008101712332A patent/CN101404266B/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034920A (en) * | 2010-10-08 | 2011-04-27 | 上海衡世光电科技有限公司 | Novel thermoelectric separation bracket for light-emitting diode (LED) surface mounted device (SMD) |
| CN102034920B (en) * | 2010-10-08 | 2013-08-14 | 上海衡世光电科技有限公司 | Thermoelectric separation bracket for light-emitting diode (LED) surface mounted device (SMD) |
| CN102290524A (en) * | 2011-09-21 | 2011-12-21 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN102290524B (en) * | 2011-09-21 | 2013-03-06 | 晶科电子（广州）有限公司 | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof |
| CN104009028A (en) * | 2014-05-26 | 2014-08-27 | 上海信耀电子有限公司 | Integrated package method and structure of high-power LED with ceramic substrate and heat dissipation substratum |
| CN104009028B (en) * | 2014-05-26 | 2017-06-06 | 上海信耀电子有限公司 | The high power LED integration packaging method and structure of ceramic substrate and heat radiation substrate |
| WO2021093568A1 (en) * | 2019-11-12 | 2021-05-20 | 深圳市绎立锐光科技开发有限公司 | Ceramic substrate and led light source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101404266B (en) | 2010-11-17 |
| CN101404266A (en) | 2009-04-08 |
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