CN104009028A - Integrated package method and structure of high-power LED with ceramic substrate and heat dissipation substratum - Google Patents
Integrated package method and structure of high-power LED with ceramic substrate and heat dissipation substratum Download PDFInfo
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- CN104009028A CN104009028A CN201410226278.0A CN201410226278A CN104009028A CN 104009028 A CN104009028 A CN 104009028A CN 201410226278 A CN201410226278 A CN 201410226278A CN 104009028 A CN104009028 A CN 104009028A
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- substrate
- ceramic substrate
- heat radiation
- led chip
- power led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
Abstract
The invention provides an integrated package method and structure of a high-power LED with a ceramic substrate and a heat dissipation substratum. The package structure at least comprises a hollow circuit board with the surface provided with a metal bonding pad, and a high thermal conductive substrate welded in the hollow circuit board. The two opposite faces of the circuit board are plated with alloy layers respectively, the alloy layer on one face is covered with a weldable and electric conductive material layer, and the alloy layer on the other face is combined with a metal substrate in a co-crystallizing or reflow soldering or laser soldering mode. At least one LED chip is welded on the weldable and electric conductive material layer, and a current drive circuit electrically connected with the at least one LED chip is formed, and the current drive circuit is electrically connected with the metal bonding pad. Due to the fact that the current path and the heat dissipation path are separated, multiple chips can be integrated, good heat dissipation performance is achieved, and the package structure also can be applied to automobile headlights, projectors and street lamps and other occasions with high radiant power density.
Description
Technical field
The present invention relates to LED encapsulation field, particularly relate to high power LED integration packaging method and the structure of a kind of ceramic substrate and heat radiation substrate.
Background technology
The encapsulation technology of existing great power LED is mainly encapsulated as master with metal framework and ceramic substrate.The shortcoming of those packaged type maximums is exactly the contradiction that cannot solve between current path and thermal dissipating path, causes device size large, aspect integrated, has some limitations, and cannot accomplish that high density and multiple dot array are integrated.
For example, in the Chinese patent literature that is 200820237597.1 at application number, a kind of surface-mounted LED module packaging structure of multi-chip is disclosed.This encapsulating structure is on aluminum nitride ceramic substrate, to be printed with circuit and pad, and plurality of LEDs chip directly coheres the front at aluminum nitride ceramic substrate, by gold thread, LED chip and aluminum nitride ceramic substrate is electrically connected; At LED chip periphery, be stamped metab, the full electroplating surface silver lustre of metab layer is stamped glass lens on metab, LED chip external coating fluoresent coating.The encapsulating structure forming in this kind of mode, maximum power can reach 3W, and device thermal resistance is 10K/W.
Again for example, in the Chinese patent literature that is 201010604319.7 at application number, a kind of multi-chipset high-power LED encapsulation structure is disclosed.This encapsulating structure is comprised of substrate, a plurality of LED encapsulation unit and circuit lead, and wherein, substrate front side is uniformly distributed a plurality of encapsulation units, and circuit lead is printed on substrate front side, and substrate consists of the copper heat-radiating substrate of lower floor and the insulating barrier on upper strata.This kind of encapsulating structure that packaged type forms, although the conductive coefficient of copper is 390W/mK, but because the conductive coefficient of insulating barrier only has 0.24W/mK, thickness of insulating layer is generally more than 25 microns, does is thermal resistance 1.04K? cm2/W, when integrated, also will take into full account the Copper Foil area on substrate, if spacing is calculated (not considering cabling) by 2*2mm, its thermal resistance is 25K/W; If single led encapsulation unit is pressed 3W running, device work thermal resistance reaches nearly 75K/W, is unfavorable for equally the heat radiation requirement under integrated condition.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide high power LED integration packaging method and the structure of a kind of ceramic substrate and heat radiation substrate, to realize multi-chip integration packaging, possesses good heat dispersion simultaneously.
For achieving the above object and other relevant objects, the invention provides a kind of high power LED integration packaging method of ceramic substrate and heat radiation substrate, it at least comprises: the relative two sides at high thermal conductive substrate plates after alloy-layer respectively, then by the material layer that wherein one side covering can be welded and conduct electricity; Arrangement mode based on photoetching technique and at least one LED chip to be packaged is formed for the current drives circuit that the LED chip to be packaged with each is connected on the described material layer that welds and conduct electricity; Each LED chip to be packaged is welded on to the relevant position on the described material layer that can weld and conduct electricity, and with corresponding current drives circuit electrical communication; The alloy-layer of described high thermal conductive substrate another side is combined with metal substrate; And form metal pad at the circuit board surface of a hollow, and the high thermal conductive substrate that is welded with LED chip is welded in the circuit board of described hollow, by metal pad and current drives circuit electrical communication, and each LED chip and current drives circuit are sealed.
Preferably, each LED chip to be packaged passes through one or more in current drives circuit formation common cathode, common anode, series connection and matrix connection.
Preferably, the bonding mode based on ultrasonic thermocompression is crossed filament by metal pad and current drives link tester or thin metal tape is connected.
Preferably, based on vacuum coating mode alloy-layer on the difference evaporation of the relative two sides of described high thermal conductive substrate.
Preferably, based on eutectic weldering or Reflow Soldering mode, LED chip to be packaged is welded on the described material layer that can weld and conduct electricity.
The present invention also provides the high-power LED integrated packaging structure of a kind of ceramic substrate and heat radiation substrate, and it at least comprises: a surface is provided with the circuit board of the hollow of metal pad; Be welded on the high thermal conductive substrate in the circuit board of described hollow, its relative two sides is coated with respectively alloy-layer, and is coated with on the alloy-layer of one side therein on the alloy-layer of the material layer that can weld and conduct electricity, another side and is combined with metal substrate; On the described material layer that welds and conduct electricity, be welded with at least one LED chip, and be formed with the current drives circuit with described at least one LED chip electrical communication, wherein, described current drives circuit and described metal pad electrical communication.
Preferably, each LED chip to be packaged passes through one or more in current drives circuit formation common cathode, common anode, series connection and matrix connection.
Preferably, the material of the described material layer that welds and conduct electricity is gold or silver-colored.
Preferably, metal pad and current drives link tester are crossed filament or thin metal tape is connected.
Preferably, the circuit board of described metal substrate and described hollow is layered laminate.
As mentioned above, the high-power LED packaging method of thermoelectricity separation of the present invention and structure, have following beneficial effect: can realize the separated of current path and thermal dissipating path, and then can realize multi-chip integration packaging, possess again good heat dispersion simultaneously; Can be applied to the occasion of high luminous power density, such as automobile headlamp, projecting apparatus, street lamp etc.
Accompanying drawing explanation
Fig. 1 a to 1f is shown as the flow chart of the high power LED integration packaging method of ceramic substrate of the present invention and heat radiation substrate.
Element numbers explanation
The high-power LED integrated packaging structure of 1 ceramic substrate and heat radiation substrate
11 high thermal conductive substrates
12 alloy-layers
13 material layers that can weld and conduct electricity
14,14 ' current drives circuit
15 LED chips
16 passivating films
17 metal substrate
The circuit board of 18 hollows
181 metal pads
182 filaments
183 location holes
Embodiment
Below, by specific instantiation explanation embodiments of the present invention, those skilled in the art can understand other advantages of the present invention and effect easily by the disclosed content of this specification.The present invention can also be implemented or be applied by other different embodiment, and the every details in this specification also can be based on different viewpoints and application, carries out various modifications or change not deviating under spirit of the present invention.
Refer to Fig. 1 a to 1f.It should be noted that, the diagram providing in the present embodiment only illustrates basic conception of the present invention in a schematic way, satisfy and only show with assembly relevant in the present invention in graphic but not component count, shape and size drafting while implementing according to reality, during its actual enforcement, kenel, quantity and the ratio of each assembly can be a kind of random change, and its assembly layout kenel also may be more complicated.
As shown in the figure, the invention provides a kind of high power LED integration packaging method of ceramic substrate and heat radiation substrate.Described method mainly comprises step S1 to S5.
In step S1, on two surfaces up and down of high thermal conductive substrate 11, plate respectively after alloy-layer 12, then upper surface is covered to the material layer 13 that can weld and conduct electricity, as shown in Figure 1a.
Wherein, high thermal conductive substrate 11 adopts insulation and the high materials of heat conduction, preferably but be not limited to: aluminium nitride (AlN) or carborundum (SIC) etc.
For example, if adopt AlN pottery, make substrate, the thermal resistance Rth of the ceramic substrate of a 2mm*2mm*0.3mm is: Rth=0.3 * 10-3/ (2 * 10-3 * 2 * 10-3 * 150)=0.5K/W, and visible, use high heat-conducting ceramic substrate to possess good radiating condition.
Wherein, the material of described alloy-layer 12 can adopt any one alloy, for example, contains titanium (Ti), nickel (Ni) and the alloy of gold (Au) or the alloy that contains Ti, platinum (Pt) and Au etc..
Preferably, can adopt vacuum coating mode alloy-layer 12 on the two surface difference evaporations up and down of described high thermal conductive substrate 11, at upper surface, by proof gold or fine silver, be covered again, make it possess good solderability and conductivity.
Then,, in step S2, metal level front having been plated based on photoetching technique etches the current drives circuit 14 that ground floor LED chip connects, as shown in Figure 1 b.
Then,, in step S3, utilize plasma reinforced chemical vapour deposition method at the positive deposition of high thermal conductive substrate one deck passivating film 16, and then utilize photoetching technique to etch chip and place window and connection window, as shown in Fig. 1 c; Subsequently, then cover by vacuum coating evaporation alloy-layer and with proof gold and fine silver, then by each LED chip arrangement mode and current drives line map, by photoetching method, make the current drives circuit 14 ' of second layer LED chip by lithography, as shown in Figure 1 d; In relevant position, by modes such as eutectic weldering, Laser Welding or Reflow Solderings, weld each LED chip 15 more subsequently, utilize if desired lead-in wire by LED chip and current drives connection; Being easy in this way to realize the integrated and dot matrix of the LED of tens micron pitch arranges; And as long as application conditions meets, chip integration and integration mode can arbitrarily convert.
Wherein, the material of described passivating film 16 can be silicon dioxide or silicon nitride etc.
In addition, also can be according to actual needs, after making the current drives circuit 14 ' of second layer LED chip by lithography, then carry out the preparation etc. of the current drives circuit of the 3rd layer of LED chip, can realize thus common cathode, common anode, series connection and the matrix connection etc. of each LED chip.
Then,, in step S4, the alloy-layer 12 of described high thermal conductive substrate 11 another sides is combined with metal substrate 17.
Wherein, the material of metal substrate 17 preferably but be not limited to copper etc.
Preferably, can the alloy-layer of high thermal conductive substrate 11 another sides 12 and metal substrate 17 be combined by modes such as eutectic weldering, Laser Welding or Reflow Solderings, can form thus extraordinary heat dissipation channel; And high heat-conducting ceramic substrate positive and negative is insulated from each other, so high power LED device has been realized thermoelectricity separation.
Then, in step S5, on the surface of the circuit board 18 of hollow, form metal pad 181, and the high thermal conductive substrate and the metal substrate 11 that are welded with LED chip are combined closely with described circuit board 18, by metal pad 181 and current drives circuit electrical communication.
Particularly, after LED chip is integrated, then weld lastblock circuit board (pcb board) around at high heat-conducting ceramic substrate, on pcb board, according to chip current type of drive, arranged corresponding power line pad, can be connected with driver circuit power supply.Drive current lead-out wire position on high heat-conducting ceramic substrate is corresponding with the power line pad on pcb board, utilizes filament or thin metal tape 182 the bonding mode by ultrasonic thermocompression to connect between the two, as shown in Fig. 1 e, 1f; Subsequently, then adopt transparent silica gel that LED chip and current drives circuit etc. is sealed, in addition, also can after setting up glass lens or plastic lens, by transparent silica gel, seal again etc.
It should be noted that, the order of above-mentioned steps S4 is not limited with the present embodiment, and in fact, step S4 also can carry out etc. after step S1, S2 or S5.
Thus, the ceramic substrate that preparation forms after above-mentioned processing step and the high-power LED encapsulation structure 1 of heat radiation substrate comprise: surface is provided with the circuit board 18 of the hollow of metal pad 181; Be welded on the high thermal conductive substrate 11 in the circuit board 18 of described hollow, its relative two sides is coated with respectively alloy-layer 12, and on the alloy-layer 12 of upper surface, is coated with on the alloy-layer 12 of gold or silver material layer 13, lower surface and is combined with metal substrate 17; In described gold or silver material layer 13, be welded with a plurality of LED chips 15, and be formed with the current drives circuit 14 with described a plurality of LED chip 15 electrical communication, wherein, described current drives circuit 14 is with described metal pad 181 electrical communication and by sealings such as transparent silica gel.
Preferably, each LED chip 15 forms common cathode, common anode, series connection, matrix connection etc. by current drives circuit 14.
Preferably, metal pad 181 can be connected by filament or thin metal tape 182 with each current drives circuit.
Preferably, described metal substrate 17 is layered laminate with the circuit board 18 of described hollow.
Preferably, for convenience of using, a plurality of location holes 183 on the circuit board 18 of described hollow, have been offered.
In sum, the high-power LED encapsulation structure of thermoelectricity separation of the present invention be take high heat-conducting ceramic substrate as core, and combine with metal substrate, by heat, electricity separated (electric current and thermal dissipating path isolation), realize multi-chip integration packaging, it possesses good heat dispersion; Can be applied to the occasion of high luminous power density, such as automobile headlamp, projecting apparatus, street lamp etc.So the present invention has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (10)
1. a high power LED integration packaging method for ceramic substrate and heat radiation substrate, is characterized in that, the high power LED integration packaging method of described ceramic substrate and heat radiation substrate at least comprises:
Relative two sides at high thermal conductive substrate plates after alloy-layer respectively, then by the material layer that wherein one side covering can be welded and conduct electricity;
Arrangement mode based on photoetching technique and at least one LED chip to be packaged is formed for the current drives circuit that the LED chip to be packaged with each is connected on the described material layer that welds and conduct electricity;
Each LED chip to be packaged is welded on to the relevant position on the described material layer that can weld and conduct electricity, and with corresponding current drives circuit electrical communication;
The alloy-layer of described high thermal conductive substrate another side is combined with metal substrate;
Circuit board surface in a hollow forms metal pad, and the high thermal conductive substrate that is welded with LED chip is welded in the circuit board of described hollow, by metal pad and current drives circuit electrical communication, and each LED chip and current drives circuit is sealed.
2. the high power LED integration packaging method of ceramic substrate according to claim 1 and heat radiation substrate, is characterized in that: one or more during each LED chip to be packaged connects by current drives circuit formation common cathode, common anode, series connection and matrix.
3. the high power LED integration packaging method of ceramic substrate according to claim 1 and 2 and heat radiation substrate, is characterized in that: metal pad and current drives link tester are crossed to filament to the bonding mode based on ultrasonic thermocompression or thin metal tape is connected.
4. the high power LED integration packaging method of ceramic substrate according to claim 1 and heat radiation substrate, is characterized in that: based on vacuum coating mode alloy-layer on the difference evaporation of the relative two sides of described high thermal conductive substrate.
5. the high power LED integration packaging method of ceramic substrate according to claim 1 and heat radiation substrate, is characterized in that: based on eutectic weldering, Laser Welding or Reflow Soldering mode, LED chip to be packaged is welded on the described material layer that can weld and conduct electricity; Based on eutectic weldering, Laser Welding or Reflow Soldering mode, alloy-layer is combined with metal substrate.
6. a high-power LED integrated packaging structure for ceramic substrate and heat radiation substrate, is characterized in that, the high-power LED integrated packaging structure of described ceramic substrate and heat radiation substrate at least comprises:
One surface is provided with the circuit board of the hollow of metal pad;
Be welded on the high thermal conductive substrate in the circuit board of described hollow, its relative two sides is coated with respectively alloy-layer, and is coated with on the alloy-layer of one side therein on the alloy-layer of the material layer that can weld and conduct electricity, another side and is combined with metal substrate;
On the described material layer that welds and conduct electricity, be welded with at least one LED chip, and be formed with the current drives circuit with described at least one LED chip electrical communication, wherein, described current drives circuit and described metal pad electrical communication and all sealed.
7. the high-power LED integrated packaging structure of ceramic substrate according to claim 6 and heat radiation substrate, is characterized in that: one or more during each LED chip to be packaged connects by current drives circuit formation common cathode, common anode, series connection and matrix.
8. the high-power LED integrated packaging structure of ceramic substrate according to claim 6 and heat radiation substrate, is characterized in that: the material of the described material layer that welds and conduct electricity is gold, silver, aluminium or alloy.
9. according to the high-power LED integrated packaging structure of the ceramic substrate described in claim 6 or 7 and heat radiation substrate, it is characterized in that: metal pad crosses filament with current drives link tester or thin metal tape is connected.
10. the high-power LED integrated packaging structure of ceramic substrate according to claim 6 and heat radiation substrate, is characterized in that: the circuit board of described metal substrate and described hollow is layered laminate.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104409614A (en) * | 2014-10-24 | 2015-03-11 | 苏州德鲁森自动化系统有限公司 | Pad for two-pin 3528 LED light |
| CN109545938A (en) * | 2017-09-22 | 2019-03-29 | 台湾爱司帝科技股份有限公司 | Manufacturing method of light-emitting module |
| WO2020143232A1 (en) * | 2019-01-10 | 2020-07-16 | 青岛海信激光显示股份有限公司 | Laser light source and laser projecting device |
| US11570411B2 (en) | 2019-01-10 | 2023-01-31 | Hisense Laser Display Co., Ltd. | Laser light source and laser projection device |
| US11592145B2 (en) | 2019-01-10 | 2023-02-28 | Hisense Laser Display Co., Ltd. | Laser light source and laser projection device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11592145B2 (en) | 2019-01-10 | 2023-02-28 | Hisense Laser Display Co., Ltd. | Laser light source and laser projection device |
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| CN104009028B (en) | 2017-06-06 |
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