WO2021093568A1 - Ceramic substrate and led light source - Google Patents

Ceramic substrate and led light source Download PDF

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Publication number
WO2021093568A1
WO2021093568A1 PCT/CN2020/123812 CN2020123812W WO2021093568A1 WO 2021093568 A1 WO2021093568 A1 WO 2021093568A1 CN 2020123812 W CN2020123812 W CN 2020123812W WO 2021093568 A1 WO2021093568 A1 WO 2021093568A1
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WO
WIPO (PCT)
Prior art keywords
ceramic substrate
circuit layer
ceramic
conductive
ceramic base
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PCT/CN2020/123812
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French (fr)
Chinese (zh)
Inventor
李扬林
李乾
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深圳市绎立锐光科技开发有限公司
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Publication of WO2021093568A1 publication Critical patent/WO2021093568A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the utility model relates to the field of lighting, in particular to a ceramic substrate and an LED light source.
  • ceramic substrates have the advantages of high mechanical strength, good insulation, high thermal conductivity and good thermal matching with semiconductor materials. Therefore, ceramic substrates are widely used in the packaging of electronic components that require high heat dissipation performance. .
  • the ceramic substrate includes a base portion, a circuit layer provided on one side of the base portion, and a conductive pad provided on the other side of the base portion, and the circuit layer is connected to the conductive pad;
  • a plurality of electronic components are respectively soldered to the circuit layer.
  • the purpose of the utility model is to provide a ceramic substrate and an LED light source.
  • the circuit layout of the ceramic substrate is simple. When the ceramic substrate is applied to the LED light source of the utility model, the reliability of the LED light source is high.
  • the present invention provides a ceramic substrate, which includes a first ceramic substrate and a second ceramic substrate stacked on the first ceramic substrate; the first ceramic substrate includes a central area and surrounding the central area The central area of the first ceramic substrate is provided with a first via hole penetrating therethrough, the first via hole is filled with a first conductive material, and the central area is far away from the second ceramic substrate
  • One side of the second ceramic substrate is provided with a central circuit layer, the side of the edge region away from the second ceramic base is provided with an edge circuit layer;
  • the second ceramic substrate is provided with a conductive pad on the side away from the first ceramic base ,
  • the second ceramic substrate is further provided with a conductive circuit electrically connected to the conductive pad, and the edge circuit layer is electrically connected to the conductive circuit on the side surface of the first ceramic substrate or the second ceramic substrate. Connected, the central circuit layer is electrically connected to the conductive circuit through the first conductive material.
  • the conductive circuit includes a first circuit layer and a second circuit layer; the second circuit layer is arranged on the side surface of the second ceramic base; the first circuit layer is sandwiched between the first ceramic base and Between the second ceramic substrates and electrically connected to the central circuit layer through the first conductive material, the second circuit layer includes a first part and a second part, and the first part connects the edge circuit layer It is electrically connected to the conductive pad, and the second part electrically connects the first circuit layer to the conductive pad.
  • the four side surfaces of the second ceramic base are provided with the second circuit layer.
  • the second ceramic substrate is provided with a second via hole penetrating therethrough, and the second via hole is filled with a second conductive material;
  • the conductive circuit includes a first circuit layer and a second circuit layer, The first circuit layer is disposed on a side of the second ceramic base away from the first ceramic base, and one end of the first circuit layer is electrically connected to the conductive pad, and the other end is sequentially passed through the second conductive pad.
  • Material and the first conductive material are electrically connected to the central circuit layer;
  • the second circuit layer is disposed on the side surface of the second ceramic substrate, and opposite ends of the second circuit layer are respectively connected to the edge circuit The layer is electrically connected to the conductive pad.
  • a side of the second ceramic base away from the first ceramic base is further provided with a thermally conductive pad, and the thermally conductive pad is spaced apart from the conductive pad.
  • the first ceramic base and the second ceramic base are formed into an integrated structure through a sintering molding process.
  • the utility model also provides an LED light source, which comprises a plurality of LED chips for emitting light and the ceramic substrate of the utility model, and the plurality of LED chips are arranged and fixed on the first ceramic substrate away from the second ceramic substrate.
  • an LED light source which comprises a plurality of LED chips for emitting light and the ceramic substrate of the utility model, and the plurality of LED chips are arranged and fixed on the first ceramic substrate away from the second ceramic substrate.
  • One side of the ceramic substrate; a part of the plurality of LED chips is arranged in the central area and electrically connected to the central circuit layer, and the other part is arranged in the edge area and electrically connected to the edge circuit layer.
  • the ceramic substrate further includes a third ceramic substrate stacked on a side of the first ceramic substrate away from the second ceramic substrate and having a receiving space, the receiving space penetrating through the third ceramic substrate, A plurality of the LED chips are located in the accommodating space.
  • the inner side surface of the third ceramic base is arranged obliquely, the inner side and the top surface of the first ceramic base form a certain included angle, and the included angle is greater than 90° and less than 180°.
  • the orthographic projection of the accommodating space on the first ceramic substrate is any one of a square, a circle, or an ellipse.
  • the first ceramic base includes a central area and an edge area surrounding the central area, and the central area of the first ceramic base is provided with a first penetrating through it.
  • a via hole, the first via hole is filled with a first conductive material, a center circuit layer is provided on the side of the central area away from the second ceramic base, and the edge area is away from the second ceramic base
  • An edge circuit layer is provided on one side of the second ceramic substrate; a conductive pad is provided on the side of the second ceramic substrate away from the first ceramic substrate, and an electrical connection electrically connected to the conductive pad is also provided on the second ceramic substrate.
  • the edge circuit layer is electrically connected to the conductive circuit on the side of the first ceramic substrate or the second ceramic substrate, and the center circuit layer is electrically connected to the conductive circuit through the first conductive material Connection, the circuit structure avoids complicated wiring, and makes the circuit layout of the ceramic substrate simple.
  • Figure 1 is a schematic diagram of the structure of the ceramic substrate of the present invention.
  • Figure 2 is a schematic structural diagram of the first embodiment of the LED light source of the present invention.
  • Figure 3 is a top view of Figure 2;
  • Figure 4 is a top view of the second embodiment of the LED light source of the present invention.
  • Fig. 5 is a schematic structural diagram of the first embodiment of the LED light source of the present invention.
  • Figure 6 is a top view of Figure 5;
  • FIG. 7 is another structural diagram of the first embodiment of the LED light source of the present invention.
  • Fig. 8 is a top view of Fig. 7.
  • the present invention provides a ceramic substrate 100, which includes a first ceramic substrate 1 and a second ceramic substrate 2 stacked on the first ceramic substrate 1.
  • the ceramic substrate 100 is mostly used in the field of packaging electronic components that require high heat dissipation performance.
  • the first ceramic substrate 1 and the second ceramic substrate 2 serve as the main parts of the ceramic substrate 100, which are made by sintering a high thermal conductivity ceramic material.
  • the first ceramic substrate 1 and the second ceramic substrate 2 are both at least one of aluminum oxide (Al2O3), aluminum nitride (AlN) and silicon carbide (SiC)
  • Al2O3 aluminum oxide
  • AlN aluminum nitride
  • SiC silicon carbide
  • both the first ceramic substrate 1 and the second ceramic substrate 2 are made of three materials: aluminum oxide (Al2O3), aluminum nitride (AlN), and silicon carbide (SiC).
  • Al2O3 aluminum oxide
  • AlN aluminum nitride
  • SiC silicon carbide
  • the mixture of three materials of aluminum oxide (Al2O3), aluminum nitride (AlN) and silicon carbide (SiC) is sintered and made into a green embryo.
  • the multi-layer green embryos are laminated, and the multi-layer green embryos are sintered to form the first ceramic substrate 1 or the second ceramic substrate 2 in a temperature environment of 1200°C-2000°C; wherein "Multi-layered green embryo” refers to a green embryo with more than two layers, and the thickness of the first ceramic substrate 1 and the second ceramic substrate 2 made is 0.1 mm to 1 mm; preferably, the thickness of the first ceramic substrate 1 and the second ceramic substrate 2 are 0.1 mm to 1 mm; In this step, hot isostatic pressing can be used to eliminate the gaps between the multi-layer green embryos and achieve integral molding, so that the integrity of the first ceramic substrate 1 and the second ceramic substrate 2 is stronger and more reliable. High performance, thereby effectively improving the mechanical strength.
  • first ceramic substrate 1 and the second ceramic substrate 2 are laminated, and the first ceramic substrate 1 and the second ceramic substrate 2 are sintered in a temperature environment of 1200°C-2000°C
  • the ceramic substrate 100 is made; the ceramic substrate 100 has the advantages of high mechanical strength, good insulation, high thermal conductivity, and good thermal matching with semiconductor materials.
  • the molding process and materials of the first ceramic base and the second ceramic base are not limited to this.
  • the first ceramic base and the second ceramic base are made by a composite molding process of multiple layers of high thermal conductivity ceramic materials, and the first ceramic It is also feasible to sinter the base body and the second ceramic base body to form a ceramic substrate.
  • first ceramic substrate 1 and the second ceramic substrate 2 are described above.
  • the specific structure of the first ceramic substrate 1 and the second ceramic substrate 2 will be combined with the conductive structure of the ceramic substrate 100 below.
  • the first ceramic base 1 includes a central area 11 and an edge area 12 surrounding the central area.
  • the central area 11 of the first ceramic base 1 is provided with a first through hole penetrating therethrough.
  • a via hole is filled with a first conductive material 110, a central circuit layer 31 is provided on the side of the central area 11 away from the second ceramic base 2, and the edge area 12 is away from a side of the second ceramic base 2.
  • An edge circuit layer 32 is provided on the side; a conductive pad 33 is provided on the side of the second ceramic base 2 away from the first ceramic base 1, and the second ceramic base 2 is also provided with the conductive pad 33 electrically connected conductive lines 34, the edge circuit layer 32 is electrically connected to the conductive lines 34 on the side of the first ceramic base 1 or the second ceramic base 2, and the center circuit layer 31 passes through the
  • the first conductive material 110 is electrically connected to the conductive circuit 34.
  • the central circuit layer 31, the edge circuit layer 32, the conductive pad 33 and the conductive circuit 34 share the conductive structure 3 of the ceramic substrate 100.
  • one part of the electronic components can be arranged on the central circuit layer 31 and form an electrical connection, and the other part can be arranged on the edge circuit layer 32 and form an electrical connection, because the central circuit layer 31 and the central circuit layer 31 are electrically connected.
  • the electrical connection links of the edge circuit layer 32 are independent of each other, which provides conditions for separately driving each electronic component in a single path.
  • the conductive circuit 34 includes a first circuit layer 341 and a second circuit layer 342; the first circuit layer 341 is sandwiched between the first ceramic substrate 1 and the second ceramic substrate 2. And is electrically connected to the first conductive material 110; the second circuit layer 342 is disposed on the side surface of the second ceramic base 2 and includes a first part 3421 and a second part 3422.
  • the first part 3421 is connected to the The second portions 3422 are alternately arranged at intervals; the first portion 3421 electrically connects the edge circuit layer 32 with the conductive pad 33, and the second portion 3422 connects the first circuit layer 341 with the conductive pad.
  • the disk 33 is electrically connected.
  • the central circuit layer 31 is led out to the side through the first conductive material 110 and the first circuit layer 341 in sequence, and finally is electrically connected to the conductive pad 33 through the second portion 3422.
  • the edge circuit layer 32 is directly electrically connected to the conductive pad 33 on the side through the first part 3421.
  • the second circuit layer serves as the side circuit of the ceramic substrate, and the number of the second circuit layer is directly related to the number of electronic components provided on the ceramic substrate.
  • the second circuit layer 342 is provided on all four sides of the second ceramic substrate 2, and the four sides provide more space for the second circuit layer 342. Effectively increase the number of the second circuit layer 342, so that more electronic components are electrically connected to the conductive pad 33 through the second circuit layer 342, and more are provided for the ceramic substrate 100.
  • Electronic components provide conditions; at the same time, because the second ceramic substrate 2 has sufficient space for installation, a plurality of the first portion 3421 and the second portion 3422 can be evenly distributed on the second ceramic substrate 2 So that the first portion 3421 of the second circuit layer 342 is electrically connected to the edge circuit layer 32 on the four sides of the first ceramic substrate 1 or the second ceramic substrate 2, and the second circuit layer 342 is electrically connected to the edge circuit layer 32.
  • the portion 3422 is electrically connected to the central circuit layer 31 through the first circuit layer on the four sides of the first ceramic substrate or the second ceramic substrate, avoiding the problem of too compact arrangement of the second circuit layer 342, thereby making the circuit structure
  • the layout is more reasonable, and the circuit structure is further simplified.
  • the forming process of the first via hole and the first conductive material 110 is specifically: after the first ceramic substrate 1 is made by sintering the multilayer green embryo, the first ceramic substrate 1 is sintered. Before the base 1 and the second ceramic base 2 are sintered and molded, the first ceramic base 1 needs to be drilled and the first via hole is formed; after the first via is formed, go to the first via hole.
  • a via hole is filled with the first conductive material 110; preferably, the aperture of the first via hole is 0.1 mm to 1 mm.
  • the first conductive material 110 has excellent electrical conductivity and good thermal conductivity, and it may be, but not limited to, at least one of copper (Cu), silver (Ag), and gold (Au).
  • the first conductive material 110 electrically connects the metal circuit located inside the ceramic substrate 100 with the external circuit.
  • a second via hole is provided on the second ceramic substrate, and the second The via hole is filled with a second conductive material;
  • the conductive circuit includes a first circuit layer and a second circuit layer, and the first circuit layer is disposed on a side of the second ceramic base away from the first ceramic base, And one end of the first circuit layer is electrically connected to the conductive pad, and the other end is electrically connected to the center circuit layer through a second conductive material and the first conductive material in turn;
  • the second circuit layer is disposed at The side surface of the second ceramic substrate and the opposite ends of the second circuit layer are electrically connected to the edge circuit layer and the conductive pad, respectively.
  • the forming process of the second via hole is the same as the above-mentioned forming process of the first via hole, and the material and formation of the second conductive material are the same as the material and forming principle of the first conductive material, which will not be repeated here.
  • the second ceramic base 2 is further provided with a thermally conductive pad 4, and the thermally conductive pad 4 transfers the internal heat to the heat.
  • the sink conduction effectively dissipates the heat, so that the heat dissipation performance of the ceramic substrate 100 is stronger.
  • the thermally conductive pad 4 is arranged on the side of the second ceramic substrate 2 away from the first ceramic substrate 1, and the thermally conductive pad 4 is spaced apart from the conductive pad 33, so that the ceramic substrate 100 is electrically conductive.
  • the separation from heat conduction improves the working stability of the ceramic substrate 100 and provides conditions for the ceramic substrate 100 to maintain normal operation under long-term load conditions.
  • the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 all have excellent electrical conductivity and good thermal conductivity.
  • the metal can be but not limited to one of copper (Cu), silver (Ag), nickel (Ni), platinum (Pt) and gold (Au).
  • the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 are provided on the outer surface of the ceramic substrate 100, in order to avoid sintering
  • the process causes damage to the three, and the forming process of the three is performed after the first ceramic base 1 and the second ceramic base 2 are laminated and sintered.
  • the central circuit layer 31 and the edge circuit are respectively formed on the first ceramic substrate 1 through one of the circuit manufacturing processes of printing, sputtering, electroplating, and electroless plating.
  • Layer 32, and the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 are formed on the second ceramic substrate 2 respectively.
  • the thickness of the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 are all 0.1 mm to 1.0 mm; Yes, the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 may be a single-layer metal structure or a multilayer metal structure
  • the specific size and specific structure of the stacked structure are determined according to the actual circuit design requirements.
  • the first circuit layer 341 is made of metal with excellent electrical conductivity, good thermal conductivity and high temperature resistance.
  • the metal can be but not limited to one of tungsten (W), molybdenum (Mo), and manganese (Mn).
  • the second ceramic base body 2 is laminated and sintered before being formed.
  • the first circuit layer 341 is formed on the second ceramic substrate 2 through a stencil printing process.
  • the thickness of the first circuit layer 341 is 10 micrometers to 200 micrometers.
  • the present invention also provides an LED light source 200, which includes a plurality of LED chips 5 for emitting light and the ceramic substrate 100 of the present invention; the structure of the LED chip 5 is not However, it may be, but is not limited to, any one of a flip chip, a vertical chip, or a horizontal chip.
  • the LED chip 5 is a flip chip.
  • a plurality of the LED chips 5 are arranged on the side of the first ceramic base 1 away from the second ceramic base 2, and a part of the plurality of the LED chips 5 is arranged at the center of the first ceramic base 1.
  • the area 11 serves as the central chip 51, which is electrically connected to the central circuit layer 31, and the other part is arranged in the edge area 12 of the first ceramic substrate 1 and serves as the edge chip 52.
  • the edge chip 52 is connected to the The edge circuit layer 32 is electrically connected.
  • center chip 51 and the edge chip 52 is not limited, and can be specifically set according to actual design requirements.
  • the following two optional implementations are listed, but not only Limited to the following two types:
  • the number of the center chip 51 is four, and the number of the edge chip 52 is eight.
  • the ceramic substrate 100 since the LED chip 5 is mounted on the outer surface of the first ceramic substrate 1, the ceramic substrate 100 often needs to be equipped with a protective device to protect the LED chip 5 and adjust the LED chip 5 The light angle.
  • protection device and the ceramic substrate 100 may be a separate structure independent of each other, or may be an integrally formed structure.
  • the protection device and the ceramic substrate 100 are formed as an integral structure; specifically, by adding a third ceramic substrate with a receiving space, the receiving space penetrates the third ceramic substrate.
  • the third ceramic base is stacked on the side of the first ceramic base 1 away from the second ceramic base 2.
  • a plurality of the LED chips 5 are located in the accommodating space, that is, the third ceramic substrate encloses the LED chips 5 to avoid damage to the LED chips 5 due to external force collisions during installation and use.
  • the LED chip 5 effectively protects the LED chip 5.
  • the third ceramic base body and the first ceramic base body 1 and the second ceramic base body 2 are molded into an integrated structure through a sintering molding process, so that the fixing of the third ceramic base body is more reliable. It is not easy to fall off, thereby further improving the reliability of the ceramic substrate 100 and better protecting the LED chip 5.
  • the inner side surface of the third ceramic base body is arranged obliquely, and the inner side surface and the top surface of the first ceramic base body form a certain included angle ⁇ , and the included angle ⁇ is greater than 90° and less than 180°.
  • the light output angle of the LED chip 5 can be adjusted by adjusting the angle of the included angle ⁇ .
  • the structure of the third ceramic substrate is not limited, and the orthographic projection of the receiving space of the third ceramic substrate on the first ceramic substrate can be any of a square, a circle, or an ellipse.
  • One kind are two specific examples, but they are not limited to this:
  • the orthographic projection of the receiving space 60a of the third ceramic base 6a on the first ceramic base 1 is circular, and the center chip and the edge The chip is located in the accommodating space 60a, and the light-emitting angle of the LED chip is controlled by the circular inner surface of the third ceramic substrate.
  • the orthographic projection of the receiving space 60b of the third ceramic substrate 6b on the first ceramic substrate 1 is square, and the center chip 51 and the edge The chip 52 is located in the accommodating space 60b, and the light-emitting angle of the LED chip is controlled by the square inner surface of the third ceramic substrate.
  • the number of the center chip 51' is one, and the number of the edge chips 52' is six, and they are respectively arranged around the center chip 51'.
  • a protection device for the LED chip can also be added according to actual use.
  • a third ceramic substrate is added, the connection relationship of the third ceramic substrate and the principle of protection are the same as those in the first embodiment. , I won’t repeat it here.
  • the center chip 51' and the edge chip 52' can be effectively protected, and the light output angle of the center chip 51' and the edge chip 52' can be adjusted through the third ceramic substrate.
  • the first ceramic base includes a central area and an edge area surrounding the central area, and the central area of the first ceramic base is provided with a first penetrating through it.
  • a via hole, the first via hole is filled with a first conductive material, a center circuit layer is provided on the side of the central area away from the second ceramic base, and the edge area is away from the second ceramic base
  • An edge circuit layer is provided on one side of the second ceramic substrate; a conductive pad is provided on the side of the second ceramic substrate away from the first ceramic substrate, and an electrical connection electrically connected to the conductive pad is also provided on the second ceramic substrate.
  • the LED light source of the present invention includes a plurality of LED chips and the ceramic substrate of the present invention.
  • the plurality of LED chips are arranged and fixed on the side of the first ceramic base away from the second ceramic base.
  • the ceramic substrate has excellent heat dissipation performance, so that the LED light source can quickly dissipate heat, thereby improving the reliability of the LED light source.

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The utility model provides a ceramic substrate and an LED light source. The ceramic substrate comprises a first ceramic substrate and a second ceramic substrate; the first ceramic substrate comprises a central area and an edge area surrounding the central area; the central area of the first ceramic substrate is provided with a first via hole; the first via hole is filled with a first conductive material; a central circuit layer is provided on the side of the central area away from the second ceramic substrate; an edge circuit layer is provided on the side of the edge area away from the second ceramic substrate; a conductive pad is provided on the side of the second ceramic substrate away from the first ceramic substrate; a conductive circuit electrically connected to the conductive pad is also provided on the second ceramic substrate; the edge circuit layer is electrically connected to the conductive circuit on a side face of the first ceramic substrate or the second ceramic substrate; and the central circuit layer is electrically connected to the conductive circuit by means of the first conductive material. Compared with related technologies, the circuit layout of the ceramic substrate of the present invention is simple, and the LED light source of the present invention can produce a good lighting effect.

Description

陶瓷基板及LED光源Ceramic substrate and LED light source 技术领域Technical field
本实用新型涉及照明领域,尤其涉及一种陶瓷基板及LED光源。The utility model relates to the field of lighting, in particular to a ceramic substrate and an LED light source.
背景技术Background technique
目前,陶瓷基板具有机械强度高、绝缘性好、热导率高及与半导体材料热匹配性好等优点,因此,陶瓷基板被广泛地应用于对散热性能要求较高的电子元器件的封装领域。At present, ceramic substrates have the advantages of high mechanical strength, good insulation, high thermal conductivity and good thermal matching with semiconductor materials. Therefore, ceramic substrates are widely used in the packaging of electronic components that require high heat dissipation performance. .
相关技术中,陶瓷基板包括基体部、设置于所述基体部的一侧的线路层以及设置于所述基体部的另一侧的导电焊盘,所述线路层与所述导电焊盘连接;在实际应用中,多个电子元器件分别焊接于所述线路层。In the related art, the ceramic substrate includes a base portion, a circuit layer provided on one side of the base portion, and a conductive pad provided on the other side of the base portion, and the circuit layer is connected to the conductive pad; In practical applications, a plurality of electronic components are respectively soldered to the circuit layer.
然而,在相关技术的陶瓷基板中,若需要对多个电子元器件分别进行单路驱动时,随着电子元器件的数量的增加和密集程度的提高,陶瓷基板的线路布置的复杂程度也随之增加,使得陶瓷基板的设计受限。However, in the ceramic substrate of the related art, if multiple electronic components need to be driven separately, as the number and density of electronic components increase, the complexity of the circuit layout of the ceramic substrate also increases. This increase limits the design of ceramic substrates.
因此,实有必要提供一种陶瓷基板新的陶瓷基板解决上述技术问题。Therefore, it is necessary to provide a new ceramic substrate to solve the above technical problems.
实用新型内容Utility model content
本实用新型的目的在于提供一种陶瓷基板及LED光源,该陶瓷基板的线路布局简单,当该陶瓷基板应用于本实用新型的LED光源时,使得该LED光源的可靠性高。The purpose of the utility model is to provide a ceramic substrate and an LED light source. The circuit layout of the ceramic substrate is simple. When the ceramic substrate is applied to the LED light source of the utility model, the reliability of the LED light source is high.
为了实现上述目的,本实用新型提供一种陶瓷基板,其包括第一陶瓷基体和叠设于所述第一陶瓷基体的第二陶瓷基体;所述第一陶瓷基体包括中心区域以及环绕该中心区域的边缘区域,所述第一陶瓷基体的中心区域设置有贯穿其上的第一导通孔,所述第一导通孔填充有第一导电材料,所述中心区域远离所述第二陶瓷基体的一侧设置有中心线路层,所述边缘区域远离所述第二陶瓷基体的一侧设置有边缘线路层;所述第二陶瓷基体远离所述第一陶瓷基体的一侧设置有导电焊盘,所述第二陶 瓷基体上还设置有与所述导电焊盘电连接的导电线路,所述边缘线路层在所述第一陶瓷基体或所述第二陶瓷基体的侧面与所述导电线路电连接,所述中心线路层通过所述第一导电材料与所述导电线路电连接。In order to achieve the above object, the present invention provides a ceramic substrate, which includes a first ceramic substrate and a second ceramic substrate stacked on the first ceramic substrate; the first ceramic substrate includes a central area and surrounding the central area The central area of the first ceramic substrate is provided with a first via hole penetrating therethrough, the first via hole is filled with a first conductive material, and the central area is far away from the second ceramic substrate One side of the second ceramic substrate is provided with a central circuit layer, the side of the edge region away from the second ceramic base is provided with an edge circuit layer; the second ceramic substrate is provided with a conductive pad on the side away from the first ceramic base , The second ceramic substrate is further provided with a conductive circuit electrically connected to the conductive pad, and the edge circuit layer is electrically connected to the conductive circuit on the side surface of the first ceramic substrate or the second ceramic substrate. Connected, the central circuit layer is electrically connected to the conductive circuit through the first conductive material.
优选的,所述导电线路包括第一线路层和第二线路层;所述第二线路层设置于所述第二陶瓷基体侧面;所述第一线路层夹设于所述第一陶瓷基体和所述第二陶瓷基体之间,并通过所述第一导电材料与所述中心线路层电连接,所述第二线路层包括第一部分和第二部分,所述第一部分将所述边缘线路层与所述导电焊盘电连接,所述第二部分将所述第一线路层与所述导电焊盘电连接。Preferably, the conductive circuit includes a first circuit layer and a second circuit layer; the second circuit layer is arranged on the side surface of the second ceramic base; the first circuit layer is sandwiched between the first ceramic base and Between the second ceramic substrates and electrically connected to the central circuit layer through the first conductive material, the second circuit layer includes a first part and a second part, and the first part connects the edge circuit layer It is electrically connected to the conductive pad, and the second part electrically connects the first circuit layer to the conductive pad.
优选的,所述第二陶瓷基体的四个侧面均设置有所述第二线路层。Preferably, the four side surfaces of the second ceramic base are provided with the second circuit layer.
优选的,所述第二陶基体设有贯穿其上的第二导通孔,所述第二导通孔填充有第二导电材料;所述导电线路包括第一线路层和第二线路层,所述第一线路层设置于所述第二陶瓷基体远离所述第一陶瓷基体的一侧,且所述第一线路层的一端与所述导电焊盘电连接,另一端依次通过第二导电材料和所述第一导电材料与所述中心线路层电连接;所述第二线路层设置于所述第二陶瓷基体侧面,且所述第二线路层的相对两端分别与所述边缘线路层和所述导电焊盘电连接。Preferably, the second ceramic substrate is provided with a second via hole penetrating therethrough, and the second via hole is filled with a second conductive material; the conductive circuit includes a first circuit layer and a second circuit layer, The first circuit layer is disposed on a side of the second ceramic base away from the first ceramic base, and one end of the first circuit layer is electrically connected to the conductive pad, and the other end is sequentially passed through the second conductive pad. Material and the first conductive material are electrically connected to the central circuit layer; the second circuit layer is disposed on the side surface of the second ceramic substrate, and opposite ends of the second circuit layer are respectively connected to the edge circuit The layer is electrically connected to the conductive pad.
优选的,所述第二陶瓷基体远离所述第一陶瓷基体的一侧还设置有导热焊盘,所述导热焊盘与所述导电焊盘间隔设置。Preferably, a side of the second ceramic base away from the first ceramic base is further provided with a thermally conductive pad, and the thermally conductive pad is spaced apart from the conductive pad.
优选的,所述第一陶瓷基体和所述第二陶瓷基体通过烧结成型工艺制成一体结构。Preferably, the first ceramic base and the second ceramic base are formed into an integrated structure through a sintering molding process.
本实用新型还提供一种LED光源,其包括用于发光的多个LED芯片以及本实用新型所述的陶瓷基板,多个所述LED芯片设置固定于所述第一陶瓷基体远离所述第二陶瓷基体的一侧;多个所述LED芯片其中一部分设置于所述中心区域并与所述中心线路层电连接,另一部分设置于所述边缘区域并与所述边缘线路层电连接。The utility model also provides an LED light source, which comprises a plurality of LED chips for emitting light and the ceramic substrate of the utility model, and the plurality of LED chips are arranged and fixed on the first ceramic substrate away from the second ceramic substrate. One side of the ceramic substrate; a part of the plurality of LED chips is arranged in the central area and electrically connected to the central circuit layer, and the other part is arranged in the edge area and electrically connected to the edge circuit layer.
优选的,所述陶瓷基板还包括叠设于所述第一陶瓷基体远离所述第二陶瓷基体一侧的且具有收容空间的第三陶瓷基体,所述收容空间贯穿所述第三陶瓷基体,多个所述LED芯片位于所述收容空间内。Preferably, the ceramic substrate further includes a third ceramic substrate stacked on a side of the first ceramic substrate away from the second ceramic substrate and having a receiving space, the receiving space penetrating through the third ceramic substrate, A plurality of the LED chips are located in the accommodating space.
优选的,所述第三陶瓷基体的内侧面倾斜设置,该内侧面与所述第 一陶瓷基体顶面形成一定夹角,所述夹角大于90°且小于180°。Preferably, the inner side surface of the third ceramic base is arranged obliquely, the inner side and the top surface of the first ceramic base form a certain included angle, and the included angle is greater than 90° and less than 180°.
优选的,所述收容空间在所述第一陶瓷基体上的正投影呈方形、圆形或椭圆形中的任意一种。Preferably, the orthographic projection of the accommodating space on the first ceramic substrate is any one of a square, a circle, or an ellipse.
与相关技术相比,本实用新型所述的陶瓷基板中,所述第一陶瓷基体包括中心区域以及环绕该中心区域的边缘区域,所述第一陶瓷基体的中心区域设置有贯穿其上的第一导通孔,所述第一导通孔填充有第一导电材料,所述中心区域远离所述第二陶瓷基体的一侧设置有中心线路层,所述边缘区域远离所述第二陶瓷基体的一侧设置有边缘线路层;所述第二陶瓷基体远离所述第一陶瓷基体的一侧设置有导电焊盘,所述第二陶瓷基体上还设置有与所述导电焊盘电连接的导电线路,所述边缘线路层在所述第一陶瓷基体或所述第二陶瓷基体的侧面与所述导电线路电连接,所述中心线路层通过所述第一导电材料与所述导电线路电连接,该线路结构避免了复杂的布线,使得所述陶瓷基板的线路布局简单。Compared with the related art, in the ceramic substrate of the present invention, the first ceramic base includes a central area and an edge area surrounding the central area, and the central area of the first ceramic base is provided with a first penetrating through it. A via hole, the first via hole is filled with a first conductive material, a center circuit layer is provided on the side of the central area away from the second ceramic base, and the edge area is away from the second ceramic base An edge circuit layer is provided on one side of the second ceramic substrate; a conductive pad is provided on the side of the second ceramic substrate away from the first ceramic substrate, and an electrical connection electrically connected to the conductive pad is also provided on the second ceramic substrate. Conductive circuit, the edge circuit layer is electrically connected to the conductive circuit on the side of the first ceramic substrate or the second ceramic substrate, and the center circuit layer is electrically connected to the conductive circuit through the first conductive material Connection, the circuit structure avoids complicated wiring, and makes the circuit layout of the ceramic substrate simple.
附图说明Description of the drawings
为了更清楚地说明本实用新型实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本实用新型的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其它的附图,其中:In order to more clearly explain the technical solutions in the embodiments of the present utility model, the following will briefly introduce the drawings needed in the description of the embodiments. Obviously, the drawings in the following description are only some implementations of the present utility model. For example, for those of ordinary skill in the art, without creative work, other drawings can be obtained based on these drawings, among which:
图1为本实用新型陶瓷基板的结构示意图;Figure 1 is a schematic diagram of the structure of the ceramic substrate of the present invention;
图2为本实用新型LED光源的实施方式一的结构示意图;Figure 2 is a schematic structural diagram of the first embodiment of the LED light source of the present invention;
图3为图2的俯视图;Figure 3 is a top view of Figure 2;
图4为本实用新型LED光源的实施方式二的俯视图;Figure 4 is a top view of the second embodiment of the LED light source of the present invention;
图5为本实用新型LED光源的实施方式一的结构示意图;Fig. 5 is a schematic structural diagram of the first embodiment of the LED light source of the present invention;
图6为图5的俯视图;Figure 6 is a top view of Figure 5;
图7为本实用新型LED光源的实施方式一的另一结构示意图;FIG. 7 is another structural diagram of the first embodiment of the LED light source of the present invention;
图8为图7的俯视图。Fig. 8 is a top view of Fig. 7.
具体实施方式Detailed ways
下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本实用新型的一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例,都属于本实用新型保护的范围。The following will clearly and completely describe the technical solutions in the embodiments of the present utility model in conjunction with the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, not all of them. Examples. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present utility model.
请参阅图1所示,本实用新型提供一种陶瓷基板100,其包括第一陶瓷基体1和叠设于所述第一陶瓷基体1的第二陶瓷基体2。Please refer to FIG. 1, the present invention provides a ceramic substrate 100, which includes a first ceramic substrate 1 and a second ceramic substrate 2 stacked on the first ceramic substrate 1.
需要说明的是,所述陶瓷基板100多用于对散热性能要求较高的电子元器件的封装领域。为了保障所述陶瓷基板100的散热性能,所述第一陶瓷基体1及所述第二陶瓷基体2作为所述陶瓷基板100的主体部分,其采用高导热陶瓷材料进行烧结而成。It should be noted that the ceramic substrate 100 is mostly used in the field of packaging electronic components that require high heat dissipation performance. In order to ensure the heat dissipation performance of the ceramic substrate 100, the first ceramic substrate 1 and the second ceramic substrate 2 serve as the main parts of the ceramic substrate 100, which are made by sintering a high thermal conductivity ceramic material.
作为一种可选的实施方式,所述第一陶瓷基体1及所述第二陶瓷基体2均为氧化铝(Al2O3)、氮化铝(AlN)和碳化硅(SiC)中的至少一种材料制成,在实际生产过程中根据需求具体地选择用于制作所述第一陶瓷基体1和所述第二陶瓷基体2的原材料。As an optional embodiment, the first ceramic substrate 1 and the second ceramic substrate 2 are both at least one of aluminum oxide (Al2O3), aluminum nitride (AlN) and silicon carbide (SiC) In the actual production process, the raw materials used to make the first ceramic base 1 and the second ceramic base 2 are specifically selected according to requirements.
在该可选的实施方式的优选方案,所述第一陶瓷基体1和所述第二陶瓷基体2均由氧化铝(Al2O3)、氮化铝(AlN)和碳化硅(SiC)等三种材料通过烧结成型工艺制成一体结构。下面对该烧结成型工艺的过程展开说明:In the preferred solution of this alternative embodiment, both the first ceramic substrate 1 and the second ceramic substrate 2 are made of three materials: aluminum oxide (Al2O3), aluminum nitride (AlN), and silicon carbide (SiC). The integral structure is made by sintering molding process. The following describes the process of the sintering molding process:
首先,在1200℃-1600℃的温度环境下,通过对氧化铝(Al2O3)、氮化铝(AlN)和碳化硅(SiC)的三种材料的混合物进行烧结并制成生胚。First, in a temperature environment of 1200°C to 1600°C, the mixture of three materials of aluminum oxide (Al2O3), aluminum nitride (AlN) and silicon carbide (SiC) is sintered and made into a green embryo.
然后,将多层的生胚叠压,并在1200℃-2000℃的温度环境下,将该多层的生胚烧结制成所述第一陶瓷基体1或所述第二陶瓷基体2;其中,“多层的生胚”是指两层以上的生胚,且制成的所述第一陶瓷基体1及所述第二陶瓷基体2的厚度均为0.1毫米至1毫米;优选的,在该步骤中,可采用热等静压的方式排除多层的生胚之间的间隙并实现整体成型,使得所述第一陶瓷基体1和所述第二陶瓷基体2的整体性更强、可靠性高,从而有效地提高机械强度。Then, the multi-layer green embryos are laminated, and the multi-layer green embryos are sintered to form the first ceramic substrate 1 or the second ceramic substrate 2 in a temperature environment of 1200°C-2000°C; wherein "Multi-layered green embryo" refers to a green embryo with more than two layers, and the thickness of the first ceramic substrate 1 and the second ceramic substrate 2 made is 0.1 mm to 1 mm; preferably, the thickness of the first ceramic substrate 1 and the second ceramic substrate 2 are 0.1 mm to 1 mm; In this step, hot isostatic pressing can be used to eliminate the gaps between the multi-layer green embryos and achieve integral molding, so that the integrity of the first ceramic substrate 1 and the second ceramic substrate 2 is stronger and more reliable. High performance, thereby effectively improving the mechanical strength.
最后,将所述第一陶瓷基体1和所述第二陶瓷基体2叠压,并在 1200℃-2000℃的温度环境下,将所述第一陶瓷基体1和所述第二陶瓷基体2烧结制成所述陶瓷基板100;所述陶瓷基板100具有机械强度高、绝缘性好、热导率高及与半导体材料热匹配性好等优点。Finally, the first ceramic substrate 1 and the second ceramic substrate 2 are laminated, and the first ceramic substrate 1 and the second ceramic substrate 2 are sintered in a temperature environment of 1200°C-2000°C The ceramic substrate 100 is made; the ceramic substrate 100 has the advantages of high mechanical strength, good insulation, high thermal conductivity, and good thermal matching with semiconductor materials.
当然,第一陶瓷基体和第二陶瓷基体的成型工艺及材料不限于此,譬如,采用多层高导热陶瓷材料的复合成型工艺制成第一陶瓷基体和第二陶瓷基体,并将第一陶瓷基体和第二陶瓷基体烧结制成陶瓷基板也是可行。Of course, the molding process and materials of the first ceramic base and the second ceramic base are not limited to this. For example, the first ceramic base and the second ceramic base are made by a composite molding process of multiple layers of high thermal conductivity ceramic materials, and the first ceramic It is also feasible to sinter the base body and the second ceramic base body to form a ceramic substrate.
值得一提的是,上面描述了第一陶瓷基体和第二陶瓷基体的材料、制作工艺及尺寸,下面将结合第一陶瓷基体1和第二陶瓷基体2的具体结构对陶瓷基板100的导电结构3展开说明:It is worth mentioning that the materials, manufacturing processes and dimensions of the first ceramic substrate and the second ceramic substrate are described above. The specific structure of the first ceramic substrate 1 and the second ceramic substrate 2 will be combined with the conductive structure of the ceramic substrate 100 below. 3Expand description:
具体的,所述第一陶瓷基体1包括中心区域11以及环绕该中心区域的边缘区域12,所述第一陶瓷基体1的中心区域11设置有贯穿其上的第一导通孔,所述第一导通孔填充有第一导电材料110,所述中心区域11远离所述第二陶瓷基体2的一侧设置有中心线路层31,所述边缘区域12远离所述第二陶瓷基体2的一侧设置有边缘线路层32;所述第二陶瓷基体2远离所述第一陶瓷基体1的一侧设置有导电焊盘33,所述第二陶瓷基体2上还设置有与所述导电焊盘33电连接的导电线路34,所述边缘线路层32在所述第一陶瓷基体1或所述第二陶瓷基体2的侧面与所述导电线路34电连接,所述中心线路层31通过所述第一导电材料110与所述导电线路34电连接。所述中心线路层31、所述边缘线路层32、所述导电焊盘33与所述导电线路34共同所述陶瓷基板100的导电结构3。Specifically, the first ceramic base 1 includes a central area 11 and an edge area 12 surrounding the central area. The central area 11 of the first ceramic base 1 is provided with a first through hole penetrating therethrough. A via hole is filled with a first conductive material 110, a central circuit layer 31 is provided on the side of the central area 11 away from the second ceramic base 2, and the edge area 12 is away from a side of the second ceramic base 2. An edge circuit layer 32 is provided on the side; a conductive pad 33 is provided on the side of the second ceramic base 2 away from the first ceramic base 1, and the second ceramic base 2 is also provided with the conductive pad 33 electrically connected conductive lines 34, the edge circuit layer 32 is electrically connected to the conductive lines 34 on the side of the first ceramic base 1 or the second ceramic base 2, and the center circuit layer 31 passes through the The first conductive material 110 is electrically connected to the conductive circuit 34. The central circuit layer 31, the edge circuit layer 32, the conductive pad 33 and the conductive circuit 34 share the conductive structure 3 of the ceramic substrate 100.
在实际应用中,电子元器件其中一部分可以设置于所述中心线路层31并形成电连接,另外一部分可以设置于所述边缘线路层32并形成电连接,由于所述中心线路层31与所述边缘线路层32的电连接链路是相互独立的,为分别进行单路驱动各个电子元器件提供了条件。In practical applications, one part of the electronic components can be arranged on the central circuit layer 31 and form an electrical connection, and the other part can be arranged on the edge circuit layer 32 and form an electrical connection, because the central circuit layer 31 and the central circuit layer 31 are electrically connected. The electrical connection links of the edge circuit layer 32 are independent of each other, which provides conditions for separately driving each electronic component in a single path.
在本实施方式中,所述导电线路34包括第一线路层341和第二线路层342;所述第一线路层341夹设于所述第一陶瓷基体1和所述第二陶瓷基体2之间,并与所述第一导电材料110电连接;所述第二线路层342设置于所述第二陶瓷基体2侧面,其包括第一部分3421和第二部 分3422,所述第一部分3421与所述第二部分3422交替间隔设置;所述第一部分3421将所述边缘线路层32与所述导电焊盘33电连接,所述第二部分3422将所述第一线路层341与所述导电焊盘33电连接。In this embodiment, the conductive circuit 34 includes a first circuit layer 341 and a second circuit layer 342; the first circuit layer 341 is sandwiched between the first ceramic substrate 1 and the second ceramic substrate 2. And is electrically connected to the first conductive material 110; the second circuit layer 342 is disposed on the side surface of the second ceramic base 2 and includes a first part 3421 and a second part 3422. The first part 3421 is connected to the The second portions 3422 are alternately arranged at intervals; the first portion 3421 electrically connects the edge circuit layer 32 with the conductive pad 33, and the second portion 3422 connects the first circuit layer 341 with the conductive pad. The disk 33 is electrically connected.
上述结构中,所述中心线路层31依次通过所述第一导电材料110、所述第一线路层341引出至侧面,并最后通过所述第二部分3422与所述导电焊盘33电连接,而所述边缘线路层32在侧面直接通过所述第一部分3421与所述导电焊盘33实现电连接,该结构设计避免了在所述陶瓷基板100在装设电子元器件的表面形成复杂的线路结构,使得线路布局简单,解决了由于电子元器件的数量较多且分布密集时,线路结构布局困难的问题,释放了所述陶瓷基板100的线路结构设计。In the above structure, the central circuit layer 31 is led out to the side through the first conductive material 110 and the first circuit layer 341 in sequence, and finally is electrically connected to the conductive pad 33 through the second portion 3422. The edge circuit layer 32 is directly electrically connected to the conductive pad 33 on the side through the first part 3421. This structural design avoids the formation of complex circuits on the surface of the ceramic substrate 100 where electronic components are installed. The structure makes the circuit layout simple, solves the problem of difficult circuit structure layout when the number of electronic components are large and densely distributed, and releases the circuit structure design of the ceramic substrate 100.
需要说明的是,第二线路层作为陶瓷基板的侧面线路,所述第二线路层的数量与设置于所述陶瓷基板的电子元器件的数量直接相关,为了进一步增加电子元器件的设置数量,作为一个更优的方案,比如,所述第二陶瓷基体2的四个侧面均设置有所述第二线路层342,四个侧面为所述第二线路层342提供了更多的设置空间,有效地增加所述第二线路层342的设置数量,使更多的电子元器件通过所述第二线路层342与所述导电焊盘33实现电连接,为所述陶瓷基板100设置更多的电子元器件提供了条件;同时,由于所述第二陶瓷基体2具有足够的设置空间,可以使多个所述第一部分3421和所述第二部分3422均匀地分布在所述第二陶瓷基体2上,使得所述第二线路层342的第一部分3421在第一陶瓷基体1或所述第二陶瓷基体2的四个侧面与边缘线路层32电连接,所述第二线路层342的第二部分3422在第一陶瓷基体或所述第二陶瓷基体的四个侧面通过第一线路层与中心线路层31电连接,避免了所述第二线路层342设置过于紧凑的问题,从而使得线路结构的布局更加合理,更进一步地简化了线路结构。It should be noted that the second circuit layer serves as the side circuit of the ceramic substrate, and the number of the second circuit layer is directly related to the number of electronic components provided on the ceramic substrate. In order to further increase the number of electronic components, As a better solution, for example, the second circuit layer 342 is provided on all four sides of the second ceramic substrate 2, and the four sides provide more space for the second circuit layer 342. Effectively increase the number of the second circuit layer 342, so that more electronic components are electrically connected to the conductive pad 33 through the second circuit layer 342, and more are provided for the ceramic substrate 100. Electronic components provide conditions; at the same time, because the second ceramic substrate 2 has sufficient space for installation, a plurality of the first portion 3421 and the second portion 3422 can be evenly distributed on the second ceramic substrate 2 So that the first portion 3421 of the second circuit layer 342 is electrically connected to the edge circuit layer 32 on the four sides of the first ceramic substrate 1 or the second ceramic substrate 2, and the second circuit layer 342 is electrically connected to the edge circuit layer 32. The portion 3422 is electrically connected to the central circuit layer 31 through the first circuit layer on the four sides of the first ceramic substrate or the second ceramic substrate, avoiding the problem of too compact arrangement of the second circuit layer 342, thereby making the circuit structure The layout is more reasonable, and the circuit structure is further simplified.
在此应该指出的是,所述第一导通孔和第一导电材料110的形成过程具体为:在多层的生胚烧结制成所述第一陶瓷基体1之后,在所述第一陶瓷基体1与所述第二陶瓷基体2烧结成型之前,需要对所述第一陶瓷基体1进行钻孔并形成所述第一导通孔;在所述第一导通孔形成后,往该第一导通孔填充第一导电材料110;优选的,所述第一导通孔的孔 径为0.1毫米至1毫米。It should be pointed out here that the forming process of the first via hole and the first conductive material 110 is specifically: after the first ceramic substrate 1 is made by sintering the multilayer green embryo, the first ceramic substrate 1 is sintered. Before the base 1 and the second ceramic base 2 are sintered and molded, the first ceramic base 1 needs to be drilled and the first via hole is formed; after the first via is formed, go to the first via hole. A via hole is filled with the first conductive material 110; preferably, the aperture of the first via hole is 0.1 mm to 1 mm.
进一步的,所述第一导电材料110的导电性能优和导热性能好,其可以为但不限于铜(Cu)、银(Ag)和金(Au)中的至少一种,该第一导电材料110将位于所述陶瓷基板100内部的金属线路与外界线路形成电连接。Further, the first conductive material 110 has excellent electrical conductivity and good thermal conductivity, and it may be, but not limited to, at least one of copper (Cu), silver (Ag), and gold (Au). The first conductive material 110 electrically connects the metal circuit located inside the ceramic substrate 100 with the external circuit.
当然,导电线路与导电焊盘的连接的方式不限于此,作为另外一个可选的实施方式(未图示),在第二陶瓷基体设置贯穿其上的第二导通孔,所述第二导通孔填充有第二导电材料;所述导电线路包括第一线路层和第二线路层,所述第一线路层设置于所述第二陶瓷基体远离所述第一陶瓷基体的一侧,且所述第一线路层的一端与所述导电焊盘电连接,另一端依次通过第二导电材料和所述第一导电材料与所述中心线路层电连接;所述第二线路层设置于所述第二陶瓷基体侧面,且所述第二线路层的相对两端分别与所述边缘线路层和所述导电焊盘电连接。Of course, the way of connecting the conductive circuit and the conductive pad is not limited to this. As another optional implementation (not shown), a second via hole is provided on the second ceramic substrate, and the second The via hole is filled with a second conductive material; the conductive circuit includes a first circuit layer and a second circuit layer, and the first circuit layer is disposed on a side of the second ceramic base away from the first ceramic base, And one end of the first circuit layer is electrically connected to the conductive pad, and the other end is electrically connected to the center circuit layer through a second conductive material and the first conductive material in turn; the second circuit layer is disposed at The side surface of the second ceramic substrate and the opposite ends of the second circuit layer are electrically connected to the edge circuit layer and the conductive pad, respectively.
该第二导通孔的形成过程与上述的第一导通孔的形成过程的原理相同,第二导电材料的材料及形成与第一导电材料的材料及形成的原理相同,在此不在赘述。The forming process of the second via hole is the same as the above-mentioned forming process of the first via hole, and the material and formation of the second conductive material are the same as the material and forming principle of the first conductive material, which will not be repeated here.
更优的,为了增强所述陶瓷基板100的散热性能,作为一个可选的实施方式,所述第二陶瓷基体2还设置有导热焊盘4,所述导热焊盘4将内部的热量向热沉传导,有效地将热量散发出去,从而使得所述陶瓷基板100的散热性能更强。More preferably, in order to enhance the heat dissipation performance of the ceramic substrate 100, as an optional embodiment, the second ceramic base 2 is further provided with a thermally conductive pad 4, and the thermally conductive pad 4 transfers the internal heat to the heat. The sink conduction effectively dissipates the heat, so that the heat dissipation performance of the ceramic substrate 100 is stronger.
所述导热焊盘4设置于所述第二陶瓷基体2远离所述第一陶瓷基体1一侧,所述导热焊盘4与所述导电焊盘33间隔设置,使得所述陶瓷基板100实现导电和导热的分离,提高所述陶瓷基板100的工作的稳定性,为所述陶瓷基板100能够在长时间负载的条件下保持正常工作提供了条件。The thermally conductive pad 4 is arranged on the side of the second ceramic substrate 2 away from the first ceramic substrate 1, and the thermally conductive pad 4 is spaced apart from the conductive pad 33, so that the ceramic substrate 100 is electrically conductive. The separation from heat conduction improves the working stability of the ceramic substrate 100 and provides conditions for the ceramic substrate 100 to maintain normal operation under long-term load conditions.
值得一提的是,所述中心线路层31、所述边缘线路层32、所述导电焊盘33、所述第二线路层342以及所述导热焊盘4均由导电性能优和导热性能好的金属制成,该金属可以为但不限于铜(Cu)、银(Ag)、镍(Ni)、铂(Pt)和金(Au)中的其中一种。It is worth mentioning that the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 all have excellent electrical conductivity and good thermal conductivity. The metal can be but not limited to one of copper (Cu), silver (Ag), nickel (Ni), platinum (Pt) and gold (Au).
由于所述中心线路层31、所述边缘线路层32、所述导电焊盘33、 所述第二线路层342以及所述导热焊盘4设于所述陶瓷基板100的外表面,为了避免烧结过程对该三者造成损坏,该三者的形成工艺在所述第一陶瓷基体1和所述第二陶瓷基体2叠压烧结形成之后进行。Since the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 are provided on the outer surface of the ceramic substrate 100, in order to avoid sintering The process causes damage to the three, and the forming process of the three is performed after the first ceramic base 1 and the second ceramic base 2 are laminated and sintered.
作为一种可选的实施方式,通过印刷、溅镀、电镀及化学镀中的其中一种电路制作工艺,在所述第一陶瓷基体1上分别形成所述中心线路层31和所述边缘线路层32,而在所述第二陶瓷基体2分别形成所述导电焊盘33、所述第二线路层342和所述导热焊盘4。As an optional embodiment, the central circuit layer 31 and the edge circuit are respectively formed on the first ceramic substrate 1 through one of the circuit manufacturing processes of printing, sputtering, electroplating, and electroless plating. Layer 32, and the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 are formed on the second ceramic substrate 2 respectively.
进一步的,所述中心线路层31、所述边缘线路层32、所述导电焊盘33、所述第二线路层342和所述导热焊盘4的厚度均为0.1毫米至1.0毫米;更进一步的,所述中心线路层31、所述边缘线路层32、所述导电焊盘33、所述第二线路层342以及所述导热焊盘4可以为单层金属结构,也可以为多层金属叠设而成的结构,其具体的尺寸及具体的结构形式,根据实际的线路设计需求而定。Further, the thickness of the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 are all 0.1 mm to 1.0 mm; Yes, the central circuit layer 31, the edge circuit layer 32, the conductive pad 33, the second circuit layer 342, and the thermal conductive pad 4 may be a single-layer metal structure or a multilayer metal structure The specific size and specific structure of the stacked structure are determined according to the actual circuit design requirements.
所述第一线路层341由导电性能优、导热性能好且耐高温的金属制成,该金属可以为但不限于钨(W)、钼(Mo)、锰(Mn)中的其中一种。The first circuit layer 341 is made of metal with excellent electrical conductivity, good thermal conductivity and high temperature resistance. The metal can be but not limited to one of tungsten (W), molybdenum (Mo), and manganese (Mn).
由于所述第一线路层341设置于所述第一陶瓷基体1和所述第二陶瓷基体2之间,所述第一线路层341的形成工艺需要在所述第一陶瓷基体1和所述第二陶瓷基体2叠压烧结形成之前进行。Since the first circuit layer 341 is disposed between the first ceramic base 1 and the second ceramic base 2, the formation process of the first circuit layer 341 needs to be between the first ceramic base 1 and the second ceramic base 2. The second ceramic base body 2 is laminated and sintered before being formed.
作为一种可选的实施方式,通过钢网印制工艺在所述第二陶瓷基体2形成所述第一线路层341。As an optional implementation manner, the first circuit layer 341 is formed on the second ceramic substrate 2 through a stencil printing process.
进一步的,所述第一线路层341的厚度为10微米至200微米。Further, the thickness of the first circuit layer 341 is 10 micrometers to 200 micrometers.
请参阅图2所示,本实用新型还提供一种LED光源200,其包括用于发光的多个LED芯片5以及本实用新型所述的陶瓷基板100;所述LED芯片5的结构形式是不限的,其可以为但不限于倒装型芯片、垂直型芯片或水平型芯片中的任意一种,比如,在本实施方式中,所述LED芯片5为倒装型芯片。Please refer to FIG. 2, the present invention also provides an LED light source 200, which includes a plurality of LED chips 5 for emitting light and the ceramic substrate 100 of the present invention; the structure of the LED chip 5 is not However, it may be, but is not limited to, any one of a flip chip, a vertical chip, or a horizontal chip. For example, in this embodiment, the LED chip 5 is a flip chip.
进一步的,多个所述LED芯片5设置于所述第一陶瓷基体1远离所述第二陶瓷基体2一侧,多个所述LED芯片5其中一部分设置于所述第一陶瓷基体1的中心区域11并作为中心芯片51,该中心芯片51 与所述中心线路层31电连接,另一部分设置于所述第一陶瓷基体1的边缘区域12并作为边缘芯片52,该边缘芯片52与所述边缘线路层32电连接。Further, a plurality of the LED chips 5 are arranged on the side of the first ceramic base 1 away from the second ceramic base 2, and a part of the plurality of the LED chips 5 is arranged at the center of the first ceramic base 1. The area 11 serves as the central chip 51, which is electrically connected to the central circuit layer 31, and the other part is arranged in the edge area 12 of the first ceramic substrate 1 and serves as the edge chip 52. The edge chip 52 is connected to the The edge circuit layer 32 is electrically connected.
需要说明的是,所述中心芯片51和所述边缘芯片52的数量是不限的,其可以根据实际设计的需求进行具体的设置,下面举出两个可选的是实施方式,但不仅仅限于下面两种:It should be noted that the number of the center chip 51 and the edge chip 52 is not limited, and can be specifically set according to actual design requirements. The following two optional implementations are listed, but not only Limited to the following two types:
实施方式一Implementation mode one
作为其中一种可选的实施方式,请参阅图3所示,所述中心芯片51的数量为四个,所述边缘芯片52的数量为八个。As an optional implementation manner, please refer to FIG. 3, the number of the center chip 51 is four, and the number of the edge chip 52 is eight.
更优的,由于所述LED芯片5装设于所述第一陶瓷基体1的外表面,所述陶瓷基板100往往需要加装保护装置以保护所述LED芯片5和调整所述LED芯片5的出光角度。More preferably, since the LED chip 5 is mounted on the outer surface of the first ceramic substrate 1, the ceramic substrate 100 often needs to be equipped with a protective device to protect the LED chip 5 and adjust the LED chip 5 The light angle.
需要说明的是,该保护装置与所述陶瓷基板100可以为相互独立的分体结构,也可以为一体成型结构。It should be noted that the protection device and the ceramic substrate 100 may be a separate structure independent of each other, or may be an integrally formed structure.
比如,在本实施方式中,该保护装置与所述陶瓷基板100为一体成型结构;具体的,通过在上增设具有收容空间的第三陶瓷基体,该收容空间贯穿所述第三陶瓷基体,该第三陶瓷基体叠设于所述第一陶瓷基体1远离所述第二陶瓷基体2一侧。For example, in this embodiment, the protection device and the ceramic substrate 100 are formed as an integral structure; specifically, by adding a third ceramic substrate with a receiving space, the receiving space penetrates the third ceramic substrate. The third ceramic base is stacked on the side of the first ceramic base 1 away from the second ceramic base 2.
上述结构中,多个所述LED芯片5位于所述收容空间内,即所述第三陶瓷基体将所述LED芯片5围设起来,避免在安装和使用过程中,因外力碰撞而损坏所述LED芯片5,有效地保护了所述LED芯片5。In the above structure, a plurality of the LED chips 5 are located in the accommodating space, that is, the third ceramic substrate encloses the LED chips 5 to avoid damage to the LED chips 5 due to external force collisions during installation and use. The LED chip 5 effectively protects the LED chip 5.
值得一提的是,所述第三陶瓷基体与所述第一陶瓷基体1和所述第二陶瓷基体2通过烧结成型工艺成型制成一体结构,使得所述第三陶瓷基体的固定更加可靠,不易脱落,从而进一步提高所述陶瓷基板100的可靠性,更好地保护所述LED芯片5。It is worth mentioning that the third ceramic base body and the first ceramic base body 1 and the second ceramic base body 2 are molded into an integrated structure through a sintering molding process, so that the fixing of the third ceramic base body is more reliable. It is not easy to fall off, thereby further improving the reliability of the ceramic substrate 100 and better protecting the LED chip 5.
进一步的,所述第三陶瓷基体的内侧面倾斜设置,该内侧面与所述第一陶瓷基体顶面形成一定夹角α,所述夹角α大于90°且小于180°。在实际应用中,可以通过调整所述夹角α的角度的大小以调整所述LED芯片5的出光角度。Further, the inner side surface of the third ceramic base body is arranged obliquely, and the inner side surface and the top surface of the first ceramic base body form a certain included angle α, and the included angle α is greater than 90° and less than 180°. In practical applications, the light output angle of the LED chip 5 can be adjusted by adjusting the angle of the included angle α.
更进一步的,需要说明的是,该第三陶瓷基体的结构形式是不限的, 该第三陶瓷基体的收容空间在第一陶瓷基体的正投影可以呈方形、圆形或椭圆形中的任意一种。下面举出两个具体的例子,但不仅仅限于此:Furthermore, it should be noted that the structure of the third ceramic substrate is not limited, and the orthographic projection of the receiving space of the third ceramic substrate on the first ceramic substrate can be any of a square, a circle, or an ellipse. One kind. Here are two specific examples, but they are not limited to this:
作为该实施方式中的其中一个可选方案,如图5-6所示,第三陶瓷基体6a的收容空间60a在第一陶瓷基体1的正投影呈圆形,所述中心芯片和所述边缘芯片位于收容空间60a内,所述LED芯片的出光角度由该第三陶瓷基体的呈圆形的内侧面控制。As one of the alternatives in this embodiment, as shown in FIGS. 5-6, the orthographic projection of the receiving space 60a of the third ceramic base 6a on the first ceramic base 1 is circular, and the center chip and the edge The chip is located in the accommodating space 60a, and the light-emitting angle of the LED chip is controlled by the circular inner surface of the third ceramic substrate.
作为该实施方中的另外一个可选方案,如图7-8所示,第三陶瓷基体6b的收容空间60b在第一陶瓷基体1的正投影呈方形,所述中心芯片51和所述边缘芯片52位于收容空间60b内,所述LED芯片的出光角度由该第三陶瓷基体的呈方形的内侧面控制。As another alternative in this embodiment, as shown in FIGS. 7-8, the orthographic projection of the receiving space 60b of the third ceramic substrate 6b on the first ceramic substrate 1 is square, and the center chip 51 and the edge The chip 52 is located in the accommodating space 60b, and the light-emitting angle of the LED chip is controlled by the square inner surface of the third ceramic substrate.
当然,呈其他结构形式的第三陶瓷基体,其原理一样,在此不再赘述。Of course, the principle of the third ceramic substrate in other structural forms is the same, so it will not be repeated here.
实施方式二Implementation mode two
作为另一种可选的实施方式,请参阅图4所示,中心芯片51’的数量为一个,边缘芯片52’的数量为六个且分别环绕该中心芯片51’设置。As another optional implementation manner, please refer to FIG. 4, the number of the center chip 51' is one, and the number of the edge chips 52' is six, and they are respectively arranged around the center chip 51'.
当然,该实施方式二,也可以根据实际使用的情况增设LED芯片的保护装置,比如,如在增设第三陶瓷基体,第三陶瓷基体的连接关系及其保护的原理与实施方式一的原理相同,在此不再赘述。通过增设第三陶瓷基体,有效地保护所述中心芯片51’和所述边缘芯片52’,同时能够通过第三陶瓷基体调整所述中心芯片51’和所述边缘芯片52’的出光角度。Of course, in the second embodiment, a protection device for the LED chip can also be added according to actual use. For example, if a third ceramic substrate is added, the connection relationship of the third ceramic substrate and the principle of protection are the same as those in the first embodiment. , I won’t repeat it here. By adding a third ceramic substrate, the center chip 51' and the edge chip 52' can be effectively protected, and the light output angle of the center chip 51' and the edge chip 52' can be adjusted through the third ceramic substrate.
与相关技术相比,本实用新型所述的陶瓷基板中,所述第一陶瓷基体包括中心区域以及环绕该中心区域的边缘区域,所述第一陶瓷基体的中心区域设置有贯穿其上的第一导通孔,所述第一导通孔填充有第一导电材料,所述中心区域远离所述第二陶瓷基体的一侧设置有中心线路层,所述边缘区域远离所述第二陶瓷基体的一侧设置有边缘线路层;所述第二陶瓷基体远离所述第一陶瓷基体的一侧设置有导电焊盘,所述第二陶瓷基体上还设置有与所述导电焊盘电连接的导电线路,所述边缘线路层在所述第一陶瓷基体或所述第二陶瓷基体的侧面与所述导电线路 电连接,所述中心线路层通过所述第一导电材料与所述导电线路电连接,该线路结构避免了复杂的布线,使得所述陶瓷基板的线路布局简单。本实用新型所述的LED光源包括多个LED芯片和本实用新型所述的陶瓷基板,多个所述LED芯片设置固定于所述第一陶瓷基体远离所述第二陶瓷基体的一侧,由于所述陶瓷基板的散热性能优,使得该LED光源的散热快,从而提高该LED光源的可靠性。Compared with the related art, in the ceramic substrate of the present invention, the first ceramic base includes a central area and an edge area surrounding the central area, and the central area of the first ceramic base is provided with a first penetrating through it. A via hole, the first via hole is filled with a first conductive material, a center circuit layer is provided on the side of the central area away from the second ceramic base, and the edge area is away from the second ceramic base An edge circuit layer is provided on one side of the second ceramic substrate; a conductive pad is provided on the side of the second ceramic substrate away from the first ceramic substrate, and an electrical connection electrically connected to the conductive pad is also provided on the second ceramic substrate. Conductive circuit, the edge circuit layer is electrically connected to the conductive circuit on the side of the first ceramic substrate or the second ceramic substrate, and the center circuit layer is electrically connected to the conductive circuit through the first conductive material Connection, the circuit structure avoids complicated wiring, and makes the circuit layout of the ceramic substrate simple. The LED light source of the present invention includes a plurality of LED chips and the ceramic substrate of the present invention. The plurality of LED chips are arranged and fixed on the side of the first ceramic base away from the second ceramic base. The ceramic substrate has excellent heat dissipation performance, so that the LED light source can quickly dissipate heat, thereby improving the reliability of the LED light source.
以上所述的仅是本实用新型的实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本实用新型创造构思的前提下,还可以做出改进,但这些均属于本实用新型的保护范围。The above are only the embodiments of the present utility model. It should be pointed out here that for those of ordinary skill in the art, improvements can be made without departing from the inventive concept of the present utility model, but these all belong to The scope of protection of the utility model.

Claims (10)

  1. 一种陶瓷基板,其特征在于,所述陶瓷基板包括第一陶瓷基体和叠设于所述第一陶瓷基体的第二陶瓷基体;所述第一陶瓷基体包括中心区域以及环绕该中心区域的边缘区域,所述第一陶瓷基体的中心区域设置有贯穿其上的第一导通孔,所述第一导通孔填充有第一导电材料,所述中心区域远离所述第二陶瓷基体的一侧设置有中心线路层,所述边缘区域远离所述第二陶瓷基体的一侧设置有边缘线路层;所述第二陶瓷基体远离所述第一陶瓷基体的一侧设置有导电焊盘,所述第二陶瓷基体上还设置有与所述导电焊盘电连接的导电线路,所述边缘线路层在所述第一陶瓷基体或所述第二陶瓷基体的侧面与所述导电线路电连接,所述中心线路层通过所述第一导电材料与所述导电线路电连接。A ceramic substrate, wherein the ceramic substrate includes a first ceramic base and a second ceramic base stacked on the first ceramic base; the first ceramic base includes a central area and an edge surrounding the central area Area, the central area of the first ceramic base is provided with a first through hole penetrating therethrough, the first through hole is filled with a first conductive material, and the central area is far away from a portion of the second ceramic base A central circuit layer is provided on the side, an edge circuit layer is provided on the side of the edge region away from the second ceramic base; a conductive pad is provided on the side of the second ceramic base away from the first ceramic base, so The second ceramic substrate is further provided with a conductive circuit electrically connected to the conductive pad, and the edge circuit layer is electrically connected to the conductive circuit on the side surface of the first ceramic substrate or the second ceramic substrate, The central circuit layer is electrically connected to the conductive circuit through the first conductive material.
  2. 根据权利要求1所述的陶瓷基板,其特征在于,所述导电线路包括第一线路层和第二线路层;所述第一线路层夹设于所述第一陶瓷基体和所述第二陶瓷基体之间,并通过所述第一导电材料与所述中心线路层电连接,所述第二线路层设置于所述第二陶瓷基体侧面;所述第二线路层包括第一部分和第二部分,所述第一部分将所述边缘线路层与所述导电焊盘电连接,所述第二部分将所述第一线路层与所述导电焊盘电连接。The ceramic substrate according to claim 1, wherein the conductive circuit comprises a first circuit layer and a second circuit layer; the first circuit layer is sandwiched between the first ceramic base and the second ceramic Between the substrates and electrically connected to the central circuit layer through the first conductive material, the second circuit layer is disposed on the side of the second ceramic substrate; the second circuit layer includes a first part and a second part The first part electrically connects the edge circuit layer and the conductive pad, and the second part electrically connects the first circuit layer and the conductive pad.
  3. 根据权利要求2所述的陶瓷基板,其特征在于,所述第二陶瓷基体的四个侧面均设置有所述第二线路层。The ceramic substrate according to claim 2, wherein the second circuit layer is provided on all four sides of the second ceramic base.
  4. 根据权利要求1所述的陶瓷基板,其特征在于,所述第二陶基体设有贯穿其上的第二导通孔,所述第二导通孔填充有第二导电材料;所述导电线路包括第一线路层和第二线路层,所述第一线路层设置于所述第二陶瓷基体远离所述第一陶瓷基体的一侧,且所述第一线路层的一端与所述导电焊盘电连接,另一端依次通过第二导电材料和所述第一导电材料与所述中心线路层电连接;所述第二线路层设置于所述第二陶瓷基体侧面,且所述第二线路层的相对两端分别与所述边缘线路层和所述导电焊盘电连接。The ceramic substrate according to claim 1, wherein the second ceramic substrate is provided with a second via hole penetrating therethrough, and the second via hole is filled with a second conductive material; the conductive circuit It includes a first circuit layer and a second circuit layer. The first circuit layer is disposed on the side of the second ceramic base away from the first ceramic base, and one end of the first circuit layer is welded to the conductive The disc is electrically connected, and the other end is electrically connected to the central circuit layer through the second conductive material and the first conductive material in turn; the second circuit layer is arranged on the side of the second ceramic substrate, and the second circuit The opposite ends of the layer are respectively electrically connected with the edge circuit layer and the conductive pad.
  5. 根据权利要求1-4任一项所述的陶瓷基板,其特征在于,所述第二陶瓷基体远离所述第一陶瓷基体的一侧还设置有导热焊盘,所述导 热焊盘与所述导电焊盘间隔设置。The ceramic substrate according to any one of claims 1-4, wherein a thermally conductive pad is further provided on a side of the second ceramic base away from the first ceramic base, and the thermally conductive pad is connected to the The conductive pads are arranged at intervals.
  6. 根据权利要求5所述的陶瓷基板,其特征在于,所述第一陶瓷基体和所述第二陶瓷基体通过烧结成型工艺制成一体结构。The ceramic substrate according to claim 5, wherein the first ceramic base and the second ceramic base are formed into an integrated structure through a sintering molding process.
  7. 一种LED光源,其包括用于发光的多个LED芯片,其特征在于,所述LED光源还包括权利要求1-6任意一项所述的陶瓷基板,多个所述LED芯片设置于所述第一陶瓷基体远离所述第二陶瓷基体的一侧;多个所述LED芯片其中一部分设置于所述中心区域并与所述中心线路层电连接,另一部分设置于所述边缘区域并与所述边缘线路层电连接。An LED light source, comprising a plurality of LED chips for emitting light, characterized in that the LED light source further comprises the ceramic substrate according to any one of claims 1-6, and a plurality of the LED chips are arranged on the One side of the first ceramic substrate away from the second ceramic substrate; a part of the plurality of LED chips is arranged in the central area and electrically connected to the central circuit layer, and the other part is arranged in the edge area and connected to the central circuit layer. The edge circuit layer is electrically connected.
  8. 根据权利要求7所述的陶瓷基板,其特征在于,所述陶瓷基板还包括叠设于所述第一陶瓷基体远离所述第二陶瓷基体一侧的且具有收容空间的第三陶瓷基体,所述收容空间贯穿所述第三陶瓷基体,多个所述LED芯片位于所述收容空间内。The ceramic substrate according to claim 7, wherein the ceramic substrate further comprises a third ceramic substrate stacked on a side of the first ceramic substrate away from the second ceramic substrate and having a receiving space, so The accommodating space penetrates the third ceramic substrate, and a plurality of the LED chips are located in the accommodating space.
  9. 根据权利要求8所述的陶瓷基板,其特征在于,所述第三陶瓷基体的内侧面倾斜设置,该内侧面与所述第一陶瓷基体顶面形成一定夹角,所述夹角大于90°且小于180°。8. The ceramic substrate according to claim 8, wherein the inner side of the third ceramic base is obliquely arranged, the inner side and the top surface of the first ceramic base form a certain included angle, and the included angle is greater than 90° And less than 180°.
  10. 根据权利要求8所述的陶瓷基板,其特征在于,所述收容空间在所述第一陶瓷基体上的正投影呈方形、圆形或椭圆形中的任意一种。8. The ceramic substrate according to claim 8, wherein the orthographic projection of the containing space on the first ceramic substrate is any one of a square, a circle, or an ellipse.
PCT/CN2020/123812 2019-11-12 2020-10-27 Ceramic substrate and led light source WO2021093568A1 (en)

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