200950180 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種發光二極體元件及其發光模組，特 別是指一種高散熱性發光二極體元件及其發光模組。 【先前技術】 目前發光二極體元件的光電轉換效率約只有10〜30〇/〇, 大部分的電能在光電轉換的過程中均被浪費轉換成廢熱，而 累積在發光二極體元件内，因此，若無法將累積在發光二極 © 體元件内的廢熱排出，就會造成發光二極體元件的劣化，降 低發光二極體元件的使用壽命。而以目前發光二極體的光電 轉換效率而言’高功率及大尺寸的發光二極體所產生的廢熱 會更多’因此散熱困難若無法解決，則無法有更大的突破。 現階段發光二極體以藍寶石基板為主，然而因為藍寶石 本身不導電且熱傳導率不高，因此各家廠商均致力於新技術 來改善發光一極邀的散熱問題，且方向均為朝向金屬基板進 行研究開發，而其中以金屬為基板且為垂直結構的技術則越 ❹ 來越受到重視。 由於金屬具有較佳的導電及熱導效能，因此可以改善藍 寶石基板電流不易通過且散熱困難等兩大基本問題，但因為 金屬不透光的特性會減少光的取出，因此通常於基板上會再 加上一層反射鏡提昇光的反射效果，來加強光的取出率。 參閱圖1，目前的垂直結構金屬基板發光二極體具有一 金屬基板21、由該金屬基板21依序向上形成的一反射鏡 22、一發光膜23’及二分別設置在發光膜23頂面與該金屬 200950180 » « 基板21底面的電極片24,該發光膜23具有一 p型半導體層 231 (p-cladding layer)、一 η 型半導體層 232 (n-cladding layer) ’及一夾設於該ρ、η型半導體層231、232間的發光 層233 (active layer)，該二電極片24可配合提供電能至該 發光膜23。 當通以外部電流並經由該二電極片24提供電能到發光 膜23時’光可由該發光膜23發出，而同時在光電轉換過程 中產生的熱能則可藉由該金屬基板21的熱導效能向外排出 ® 散熱，同時可藉由反射鏡22將朝向底面的光經反射後實質 向上發光’而提昇發光二極體的亮度。 目前已開發出的以銅合金為金屬基板的垂直結構金屬 基板發光二極體，其散熱效果及亮度雖較一般藍寶石基板結 構要尚’然而高功率及大尺寸的發光二極體仍無法僅由該金 屬基板的散熱，而達到預期的功效，因此如何有效克服發光 一極體散熱同時增加亮度的問題，一直是在此技術領域者所 要積極突破解決的重要課題之一。 ® 【發明内容】 因此’本發明之一目的’即在提供一種高散熱性發光二 極體元件。 再者’本發明的另一目的為提供一種高散熱性發光二極 體元件的發光模組。 於疋，本發明高散熱性發光二極體元件是包含一片導熱 座，及一個二極體單元。 該導熱座具有~熱傳基底及-散熱層，該熱傳基底由導 6 200950180 熱材料構成’該散熱層以類鑽碳膜為材料由該熱傳基底向上 形成，厚度在5000A〜ιοοοοΑ。 該一極體單元包括一反射鏡、一發光族、一第一電極 片，及一第二電極片，該反射鏡連接於該散熱層，具有一承 載部及電極部’且該反射鏡可導電；該發光膜設置於該承載 部’可在提供電能時發光，該第一、二電極片分別設置在該 發光膜頂面與該電極部而可互相配合提供電能至該發光膜。 再者’本發明高散熱性發光二極體元件的發光模組包含 ® 一片導熱座、複數個二極體單元，及複數組連接單元。 該導熱座包括一由導熱材料構成的熱傳基底，及一設置 在該熱傳基底上的散熱層，該散熱層以類鑽碳膜構成且厚度 在 5000人〜ιοοοοΑ。 該等二極體單元是彼此相間隔設置於該導熱座上，該每 一個二極體單元包括一與該散熱層連接的反射鏡，該反射鏡 具有一承載部及一電極部、一設置於該承載部上並可在提供 電能時發光的發光膜、一第一電極片，及一第二電極片，該 第一電極片設置在該發光膜頂面，該第二電極片設置在該電 極部，可相配合提供電能。 該等連接單元可電連接該等第一、二電極片而使該等發 光膜電導通。 本發明之功效在於：藉由與該二極體單元連接並以類鑽 碳膜構成的散熱層，將該發光膜在光電轉換過程中產生的廢 熱，快速地向熱傳基底傳導向外界散出，而達到快速散熱的 效果’另外，也可藉由該等連接單元將複數個設置於該散熱 7 200950180 座上的二極體單元彼此電連接，形成一高亮度的高散熱性發 光一極體的發光模組。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效，在以 下配合參考圖式之三個較佳實施例的詳細說明中，將可清楚 的呈現。 在本發明被詳細描述之前，要注意的是，在以下的說明 内容中，類似的元件是以相同的編號來表示。 參閱圖2’本發明高散熱性發光二極體元件的一第一較 佳實施例，包含一片導熱座3及一個二極體單元4。 該導熱座3包括一由銅為材料，厚度約1〇〇〜15〇μηι所構 成的熱傳基底31，及一設置在該熱傳基底31上的散熱層 32該散熱層32為類鑽碳膜（diain〇nd-like films)，是以電黎 輔助化學氣相層積法（PECVD)的化學反應，在低於6〇〇。(：條 件下成長，厚度在5〇〇〇A〜ιοοοοΑ，不透光，且具有極佳導 熱效果。 該二極體單元4是設置於該導熱座3上，包括一連接在 該散熱層32上的反射鏡41，該反射鏡41具有一承載部411 及一電極部412、一設置於該承載部411上的發光膜42，可 在提供電能時發光、一設置在該發光膜42頂面的第一電極 片43，及一設置在該電極部412上並與該第一電極片43相 配合對該發光膜42提供電能的第二電極片44，該反射鏡41 可由金、鋁、銀、氮化鈦、或氧化锆等金屬為材料所構成， 用以導電並反射該發光膜42作動發出的光。 200950180 該發光膜42具有一與該第一電極片43連接的n型半導 體層422、- p型半導體層42卜及一炎設於該？型半導體 層421與該11型半導體層422之間的發光層423。 當施以外部電流於該發光膜42進行光電轉換時，光會 經由該發光層423實質向上發出，而產生的廢熱則會藉由該 散熱層32快速地向該熱傳基底31傳導向外界散出由於該 散熱層32為類鑽碳膜’同時含有㈣及印2之混成軌域存 在，具有超高的熱傳導性，故熱可經由該散熱層32快速向 外界傳出，達到快速散熱的效果，而達到本發明的目的。 接著參閱圖3,本發明高散熱性發光二極體元件的一第 一較佳實施例，其結構大致與該第一較佳實施例相似，不同 處在於該發光膜42還具有複數由該ρ型半導體層421底面向 該發光層423方向延伸的環繞面424、複數連接該等環繞面 424頂緣的基面425 ’該每一環繞面424及該每一基面425 配合界定出一凹孔426，且該等凹孔426的平均深度為 1000〜5000人、平均開口孔徑為卜祚爪，且相鄰的兩凹孔426 間的距離與該等凹孔426開口的平均孔徑實質相同，藉此讓 該發光膜42與該反射鏡41連接的底面成非平坦的連續面， 而可提升由該發光膜42向下行進的光子的折射及/或散射效 果，並減低因光子產生全反射轉換成内廢熱的機率，有效提 昇該發光二極體元件的發光亮度。 參閱圖4，本發明高散熱性發光二極體元件的一第三較 佳實施例’其結構大致與該第二較佳實施例相似，不同處在 於該發光膜42還具有複數填滿該每一凹孔426的高溫類鑽碳 200950180 » » 膜結構427，及一夾設於該P型半導體層421底面及該承载 部411之間，且由氧化銦錫（ITO)為材料所構成的透明導電層 428’該透明導電層428與該p型半導體層421為歐姆接觸且 形成良好的電流擴散機制，該每一高溫類鑽碳媒結構427為 使用PECVD方法，在600°C高溫成長的可透光的類鑽碳 (diamond-like )，因此填入該等凹孔426内可藉由折射率的 差異而增加折射及/或散射效果。當施以外部電流於該發光膜 42進行光電轉換時，部分的光會經由該發光層423直接向上 ® 發出，而另一部份向下行進的光在接觸到該等環繞面424或 通過該等高溫類鑽碳膜結構427時，藉由該等圍繞面424與 命溫類鐵碳膜結構427改變光線接觸後反射及/或折射後的 角度，可將光精由散射及/或折射效果而再實質由該發光膜 42向上發出，以提高亮度；而同時，產生的廢熱則會藉由該 散熱層32快速地經過熱傳基底31向外界散出，而可同時達 到散熱及提昇該發光二極體元件亮度的效果。 ❹ 參閱圖5,另外，可以上述高散熱性發光二極體元件為 基礎，製作出亮度更高的高散熱性發光二極體元件的發光模 該向散熱性發光一極體元件的發光模組包含一片導熱座 3、複數個二極體單元4，及複數組連接單元5。 該導熱座3包括一由銅為導熱材料所構成，厚度約 1〇〇〜ΐ5〇μιη的熱傳基底31，及一設置在該熱傳基底3ι 2， 厚度在5〇〇〇Α〜ΙΟΟΟΟΑ的散熱層32。 該等二極體單元4為彼此相間隔排列設置於該導熱座3 上，該每-二極體單元4其組成、結構與該第三較佳實施例 10 200950180 * . 相同，故在此不再多加說明。 該每一連接單元5具有一由二氧化矽（Si〇2)為材料所構 成的絕緣層51 ’及一由銅為材料構成的導電層52，該絕緣 層51自其中一個二極體單元4的反射鏡41側面延伸而遮覆 該一極體單元4與該另一相鄰之二極體單元4間的散熱層32 表面，並向上延伸遮覆該相鄰之二極體單元4的反射鏡41 與相對該二極體單元4的側面，該導電層52設置在該絕緣 層51上且相反兩端分別電連接該二極體單元4的第二電極 ^ 片44與該相鄰之二極體單元4的第一電極片43，而可將該 等相鄰的二極體單元4彼此串聯。 當通以外部電流時，藉由該等連接單元5的連結導通而 能同時提供電能至該每一個二極體單元4同時作動，除了可 達到散熱及梵度提昇的效果外，也因該等二極體單元4為彼 此串聯電連接，因此也可降低封裝時外接導線的數目，提昇 製程的便利性。另外，該連接單元5亦可料接該等相鄰的 魯 —極體單元4上的同相電極片，而得以使該等二極體單元4 間以並聯方式電連接，亦可達到相同的效果，由於此等並聯 電連接技術為業界所週知，在此不多加說明。 综上所述，目前垂直式發光二極體使用的基板為導熱性 佳的金屬（例如銅或銅合金），導熱效果雖然比藍寶石基板 好’然而仍不足以應付高功率及大尺寸發光二極體元件的散 熱需求。本發明由-與該二極體單元連接且導熱性極佳的類 鐵碳膜為熱導材料，藉由其優越的熱導性能（其熱導效果為銅 的三倍）將產生的廢熱快速的移除，而大幅的提昇散熱效率； 200950180 另外再藉由該等環繞面及高溫類鑽碳膜結構對光的折射及/ 或散射而讓光實質向上由該頂面發出而可同時提高發光二 極體元件的亮度；而藉由該二極體單元所製作的高散熱性發 光二極體元件的發光模組，不僅有散熱及亮度提昇的效果， 也因該等二極體元件為彼此串聯電連接，因此也可降低封裝 時外接導線的數目，簡化製程，故確實能達成本發明之目的。 准以上所述者，僅為本發明之較佳實施例而已，當不能 以此限定本發明實施之範圍，即大凡依本發明申請專利範圍 ® 及發明說明内容所作之簡單的等效變化與修飾，皆仍屬本發 明專利涵蓋之範圍內。 【圖式簡單說明】 圖1是一前視示意圊，說明習知垂直結構金屬基板發光 二極體； 圖2疋一前視不意圖，說明本發明高散熱性發光二極體 元件的第一較佳實施例； 圖3是一前視示意圖，說明本發明高散熱性發光二極體 ® 元件的第二較佳實施例； 圖4是一前視示意圖，說明本發明高散熱性發光二極體 元件的第三較佳實施例；及 圖5疋一前視不意圖，說明本發明高散熱性發光二極體 元件的發光模組的較佳實施例。 12 200950180 * . 【主要元件符號說明】 3 導熱座 424 環繞面 31 熱傳基底 425 基面 32 散熱層 426 凹孔 4 二極體單元 427 高溫類鑽碳膜結構 41 反射鏡 428 透明導電層 411 承載部 43 第一電極片 412 電極部 44 第二電極片 42 發光膜 5 連接單元 421 P型半導體層 51 絕緣層 422 η型半導體層 52 導電層 423 發光層 13200950180 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode element and a light-emitting module thereof, and more particularly to a high-heat-dissipating light-emitting diode element and a light-emitting module thereof. [Prior Art] At present, the photoelectric conversion efficiency of the light-emitting diode element is only about 10 to 30 〇 / 〇, and most of the electric energy is wasted into waste heat during the photoelectric conversion process, and accumulated in the light-emitting diode element. Therefore, if the waste heat accumulated in the light-emitting diode element cannot be discharged, deterioration of the light-emitting diode element is caused, and the life of the light-emitting diode element is lowered. In terms of the photoelectric conversion efficiency of the current light-emitting diodes, the high-power and large-sized light-emitting diodes generate more waste heat. Therefore, if the heat-dissipation is difficult to solve, there is no greater breakthrough. At present, the light-emitting diodes are mainly sapphire substrates. However, because sapphire itself is not conductive and the thermal conductivity is not high, all manufacturers are committed to new technologies to improve the heat dissipation problem of the light-emitting, and the directions are toward the metal substrate. Research and development have been carried out, and the technology in which metal is used as a substrate and is a vertical structure has become more and more important. Since the metal has better electrical conductivity and thermal conductivity, it can improve two basic problems such as the sapphire substrate current is difficult to pass and the heat dissipation is difficult. However, since the metal opaque property reduces the light extraction, it is usually on the substrate. A layer of mirror is added to enhance the reflection of light to enhance the light extraction rate. Referring to FIG. 1, the current vertical structure metal substrate light-emitting diode has a metal substrate 21, a mirror 22 formed by the metal substrate 21 in sequence, a light-emitting film 23' and two are respectively disposed on the top surface of the light-emitting film 23. And the metal 200950180 » « the electrode sheet 24 on the bottom surface of the substrate 21, the luminescent film 23 has a p-cladding layer, an n-cladding layer ′ and an inter The light-emitting layer 233 between the ρ and n-type semiconductor layers 231 and 232, the two-electrode sheet 24 can cooperate to supply electric energy to the luminescent film 23. When an external current is supplied and electric energy is supplied to the luminescent film 23 via the two-electrode sheet 24, light can be emitted from the luminescent film 23, and at the same time, thermal energy generated during the photoelectric conversion process can be thermally tuned by the metal substrate 21. The heat is discharged to the outside, and the brightness of the light-emitting diode can be improved by reflecting the light toward the bottom surface by the mirror 22 to substantially emit light. At present, a vertical structure metal substrate light-emitting diode with a copper alloy as a metal substrate has a heat dissipation effect and a brightness higher than that of a general sapphire substrate structure. However, a high-power and large-sized light-emitting diode cannot be used only by The heat dissipation of the metal substrate achieves the expected effect, so how to effectively overcome the problem of heat dissipation of the light-emitting body while increasing the brightness has been one of the important issues that the technical field has to actively solve and solve. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a highly heat-dissipating light-emitting diode element. Further, another object of the present invention is to provide a light-emitting module of a highly heat-dissipating light-emitting diode element. In the present invention, the high heat dissipation LED component of the present invention comprises a heat conducting seat and a diode unit. The heat conducting base has a heat transfer substrate and a heat dissipation layer, and the heat transfer substrate is made of a conductive material. The heat dissipation layer is formed by using the diamond-like carbon film as a material from the heat transfer substrate, and has a thickness of 5000A to ιοοοο. The one-pole unit includes a mirror, a light-emitting group, a first electrode sheet, and a second electrode sheet. The mirror is connected to the heat dissipation layer, and has a bearing portion and an electrode portion ′ and the mirror is electrically conductive. The illuminating film is disposed on the carrying portion ′ to emit light when the electric energy is supplied, and the first and second electrode sheets are respectively disposed on the top surface of the illuminating film and the electrode portion to cooperate with each other to supply electric energy to the illuminating film. Furthermore, the light-emitting module of the high heat-dissipating light-emitting diode component of the present invention comprises: a heat-conducting seat, a plurality of diode units, and a multi-array connection unit. The heat conducting base comprises a heat transfer substrate composed of a heat conductive material, and a heat dissipating layer disposed on the heat transfer substrate, the heat dissipating layer being composed of a diamond-like carbon film and having a thickness of 5,000 to ιοοοο. The diode units are spaced apart from each other on the heat conducting seat, and each of the diode units includes a mirror connected to the heat dissipation layer, the mirror has a bearing portion and an electrode portion, and is disposed on a light-emitting film on the carrying portion and capable of emitting light when supplying electric energy, a first electrode sheet, and a second electrode sheet, wherein the first electrode sheet is disposed on a top surface of the light-emitting film, and the second electrode sheet is disposed on the electrode The department can be used to provide electrical energy. The connecting units can electrically connect the first and second electrode sheets to electrically conduct the light emitting films. The effect of the invention is that the waste heat generated by the photoelectric conversion process in the photoelectric conversion process is quickly transmitted to the heat transfer substrate to the outside by the heat dissipation layer which is connected to the diode unit and is formed by a diamond-like carbon film. And achieving the effect of rapid heat dissipation. In addition, a plurality of diode units disposed on the heat sink 7 200950180 can be electrically connected to each other by the connecting unit to form a high-brightness, high-heat-dissipating light-emitting body. Light module. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the invention. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to Figure 2', a first preferred embodiment of the high heat dissipation LED component of the present invention comprises a heat conducting block 3 and a diode unit 4. The heat conducting base 3 includes a heat transfer substrate 31 made of copper and having a thickness of about 1 〇〇 15 〇 μηι, and a heat dissipation layer 32 disposed on the heat transfer substrate 31. The heat dissipation layer 32 is diamond-like carbon. Diain(nd-like films) are chemical reactions of electro-chemical assisted chemical vapor deposition (PECVD) at less than 6 〇〇. (: grows under conditions, thickness is 5〇〇〇A~ιοοοοΑ, opaque, and has excellent heat conduction effect. The diode unit 4 is disposed on the heat conducting seat 3, including a connection to the heat dissipation layer 32. The upper mirror 41 has a carrying portion 411 and an electrode portion 412, and a luminescent film 42 disposed on the carrying portion 411. The illuminating film 42 is illuminating when the electric energy is supplied, and is disposed on the top surface of the luminescent film 42. a first electrode sheet 43 and a second electrode sheet 44 disposed on the electrode portion 412 and cooperating with the first electrode sheet 43 to supply electrical energy to the luminescent film 42. The mirror 41 may be made of gold, aluminum or silver. A metal such as titanium nitride or zirconia is used as a material for conducting and reflecting light emitted by the luminescent film 42. The luminescent film 42 has an n-type semiconductor layer 422 connected to the first electrode sheet 43. a p-type semiconductor layer 42 and a light-emitting layer 423 disposed between the semiconductor layer 421 and the 11-type semiconductor layer 422. When an external current is applied to the light-emitting film 42 for photoelectric conversion, the light will be Generated by the luminescent layer 423 substantially upwards, resulting in waste The heat dissipation layer 32 is quickly radiated to the heat transfer substrate 31 to the outside. Since the heat dissipation layer 32 is a diamond-like carbon film, and the mixed track region containing (4) and the ink 2 is present, the heat conductivity is super high. Therefore, the heat can be quickly transmitted to the outside through the heat dissipation layer 32 to achieve the effect of rapid heat dissipation, thereby achieving the object of the present invention. Referring next to FIG. 3, a first preferred embodiment of the high heat dissipation LED component of the present invention is described. For example, the structure is substantially similar to the first preferred embodiment, except that the luminescent film 42 further has a plurality of surrounding surfaces 424 extending from the bottom of the p-type semiconductor layer 421 toward the luminescent layer 423, and a plurality of connections. The base surface 425 ′ of the top edge of the surface 424 defines a recessed hole 426 for each of the surrounding surfaces 424 and the base surface 425 , and the average depth of the recessed holes 426 is 1000 to 5000 persons, and the average opening aperture is The claws, and the distance between the adjacent two recessed holes 426 are substantially the same as the average aperture of the openings of the recessed holes 426, thereby making the bottom surface of the luminescent film 42 and the mirror 41 connected to a non-flat continuous surface. Can be lifted down by the luminescent film 42 The refracting and/or scattering effect of the traveling photons, and reducing the probability of photo-generated total reflection being converted into internal waste heat, effectively improving the luminance of the light-emitting diode element. Referring to FIG. 4, the high heat-dissipating light-emitting diode of the present invention A third preferred embodiment of the component 'is substantially similar in structure to the second preferred embodiment, except that the luminescent film 42 further has a plurality of high temperature diamond-like carbon 200950180 » » film The transparent conductive layer 428 ′ is formed by a structure 427 and a transparent conductive layer 428 ′′ formed by the indium tin oxide (ITO) material and the p-type layer. The semiconductor layer 421 is in ohmic contact and forms a good current spreading mechanism. Each of the high temperature diamond-like carbon structures 427 is a permeable, diamond-like carbon that grows at a high temperature of 600 ° C using a PECVD method. Filling into the recesses 426 increases the refractive and/or scattering effects by the difference in refractive index. When an external current is applied to the luminescent film 42 for photoelectric conversion, part of the light is directly emitted upward through the luminescent layer 423, and another portion of the downward traveling light is in contact with or through the surrounding surface 424. When the high temperature diamond-like carbon film structure 427 is used, the surrounding surface 424 and the pyrophoric iron-carbon film structure 427 change the angle of reflection and/or refraction after the light is contacted, and the light is scattered and/or refracted. Further, the luminescent film 42 is substantially emitted upward to increase the brightness; at the same time, the generated waste heat is quickly dissipated to the outside through the heat transfer substrate 31 by the heat dissipation layer 32, and the heat dissipation and the illuminating can be simultaneously achieved. The effect of the brightness of the diode element.参阅 Referring to FIG. 5, in addition, the light-emitting module of the high-heat-dissipating light-emitting diode element having higher brightness can be produced based on the high heat-dissipating light-emitting diode element, and the light-emitting module of the heat-dissipating light-emitting element can be produced. The utility model comprises a heat conducting seat 3, a plurality of diode units 4, and a complex array connecting unit 5. The heat conducting base 3 comprises a heat transfer substrate 31 made of copper as a heat conductive material and having a thickness of about 1 〇〇 5 〇 5 〇 μηη, and a heat transfer substrate 3 ι 2 disposed at a thickness of 5 〇〇〇Α ΙΟΟΟΟΑ Heat dissipation layer 32. The diode units 4 are arranged on the heat conducting base 3 at intervals. The composition and structure of the diode unit 4 are the same as those of the third preferred embodiment 10 200950180 *. More explanations. Each of the connecting units 5 has an insulating layer 51' made of yttria (Si〇2) and a conductive layer 52 made of copper. The insulating layer 51 is from one of the diode units 4. The mirror 41 extends laterally to cover the surface of the heat dissipation layer 32 between the one body unit 4 and the other adjacent diode unit 4, and extends upward to cover the reflection of the adjacent diode unit 4. The mirror 41 is opposite to the side surface of the diode unit 4, and the conductive layer 52 is disposed on the insulating layer 51, and the opposite ends are electrically connected to the second electrode tab 44 of the diode unit 4 and the adjacent two The first electrode sheets 43 of the polar body unit 4, and the adjacent diode units 4 may be connected in series to each other. When an external current is applied, the connection of the connecting units 5 can be simultaneously supplied with electric energy to the simultaneous operation of each of the diode units 4, in addition to the effect of heat dissipation and vanguard improvement, The diode units 4 are electrically connected in series to each other, so that the number of external wires at the time of packaging can also be reduced, and the convenience of the process can be improved. In addition, the connecting unit 5 can also be connected to the in-phase electrode sheets on the adjacent lu-polar unit 4, so that the diode units 4 can be electrically connected in parallel, and the same effect can be achieved. Since these parallel electrical connection technologies are well known in the industry, they will not be described here. In summary, the substrate used in the vertical light-emitting diode is a metal with good thermal conductivity (such as copper or copper alloy), although the heat conduction effect is better than that of the sapphire substrate, but it is still insufficient to cope with high power and large-size light-emitting diodes. The heat dissipation requirements of the body components. The invention relates to an iron-like carbon film which is connected with the diode unit and has excellent thermal conductivity as a thermal conductive material, and the waste heat generated by the superior thermal conductivity (the thermal conductivity of which is three times that of copper) is fast. Removal, and greatly improve the heat dissipation efficiency; 200950180 In addition, by the refraction and/or scattering of light by the surrounding surface and the high temperature diamond-like carbon film structure, the light is substantially emitted upward from the top surface to simultaneously improve the light emission. The brightness of the diode element; and the light-emitting module of the high heat-dissipating light-emitting diode element fabricated by the diode unit not only has the effect of heat dissipation and brightness enhancement, but also because the diode elements are each other The electrical connection in series can also reduce the number of external wires during packaging and simplify the process, so that the object of the present invention can be achieved. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change and modification according to the scope of the present invention and the description of the invention. All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front elevational view showing a conventional vertical structure metal substrate light-emitting diode; FIG. 2 is a front view not intended to illustrate the first of the high heat dissipation light-emitting diode elements of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a front elevational view showing a second preferred embodiment of the high heat dissipation LED product of the present invention; FIG. 4 is a front elevational view showing the high heat dissipation LED of the present invention. A third preferred embodiment of the body member; and FIG. 5 is a front view for explaining a preferred embodiment of the light-emitting module of the high heat-dissipating light-emitting diode element of the present invention. 12 200950180 * . [Main component symbol description] 3 Thermal conduction seat 424 Surrounding surface 31 Heat transfer base 425 Base surface 32 Heat dissipation layer 426 Recessed hole 4 Diode unit 427 High temperature diamond-like carbon film structure 41 Mirror 428 Transparent conductive layer 411 Portion 43 First electrode sheet 412 Electrode portion 44 Second electrode sheet 42 Light-emitting film 5 Connection unit 421 P-type semiconductor layer 51 Insulating layer 422 n-type semiconductor layer 52 Conductive layer 423 Light-emitting layer 13