US20180006199A9 - Semiconductor light emitting element with dispersive optical unit and illumination device comprising the same - Google Patents

Semiconductor light emitting element with dispersive optical unit and illumination device comprising the same Download PDF

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Publication number
US20180006199A9
US20180006199A9 US14/218,944 US201414218944A US2018006199A9 US 20180006199 A9 US20180006199 A9 US 20180006199A9 US 201414218944 A US201414218944 A US 201414218944A US 2018006199 A9 US2018006199 A9 US 2018006199A9
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United States
Prior art keywords
light emitting
emitting element
semiconductor light
transparent substrate
disposed
Prior art date
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Abandoned
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US14/218,944
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US20140197441A1 (en
Inventor
Zhi-Ting YE
Fen-Ren Chien
Shyi-Ming Pan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
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Epistar Corp
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=49662121&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=US20180006199(A9) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from TW101125599A external-priority patent/TWI479695B/en
Priority claimed from TW101131198A external-priority patent/TW201409775A/en
Priority claimed from TW101131643A external-priority patent/TWI464908B/en
Priority claimed from TW101132187A external-priority patent/TWI490432B/en
Priority claimed from TW101132185A external-priority patent/TWI577919B/en
Priority claimed from TW102116429A external-priority patent/TWI533468B/en
Priority claimed from TW102116650A external-priority patent/TWI511279B/en
Priority claimed from US13/903,998 external-priority patent/US20130320363A1/en
Application filed by Epistar Corp filed Critical Epistar Corp
Assigned to FORMOSA EPITAXY INCORPORATION reassignment FORMOSA EPITAXY INCORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHIEN, FEN-REN, PAN, SHYI-MING, YE, Zhi-ting
Priority to US14/218,944 priority Critical patent/US20180006199A9/en
Publication of US20140197441A1 publication Critical patent/US20140197441A1/en
Priority to TW104107764A priority patent/TWI550898B/en
Priority to TW104203609U priority patent/TWM507584U/en
Priority to CN201520148755.6U priority patent/CN204668357U/en
Priority to CN201510114780.7A priority patent/CN104934521B/en
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FORMOSA EPITAXY INCORPORATION
Publication of US20180006199A9 publication Critical patent/US20180006199A9/en
Abandoned legal-status Critical Current

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Definitions

  • the present invention relates to a semiconductor light emitting element and an illumination device thereof, and more particularly, to a semiconductor light emitting element providing light in multi-directions, and an illumination device including the semiconductor light emitting element.
  • a light beam emitted from a light emitting diode is a kind of directional light source, which is different from a dispersive light source of a conventional bulb. Accordingly, applications of LED are limited. For instance, the conventional LED cannot or may be hard to provide required lighting effect for indoor and outdoor illumination applications. Additionally, conventional LED illumination devices emit light beams from a single side and luminous efficiency of the conventional LED illumination device is relatively low accordingly.
  • the purposes of luminous efficiency enhancement, light shape improvement, and cost reduction may then be achieved.
  • a preferred embodiment of the present invention provides a semiconductor light emitting element.
  • the semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) structures.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with at least a part of the support surface without the LED structures.
  • Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface.
  • a preferred embodiment of the present invention provides an illumination device.
  • the illumination device includes at least one semiconductor light emitting element and a supporting base.
  • the semiconductor light emitting element includes a transparent substrate and a plurality of LED structures.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with at least a part of the support surface without the LED structures.
  • Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface.
  • the semiconductor light emitting element is disposed on the supporting base, and a first angle may exist between the semiconductor light emitting element and the supporting base.
  • the semiconductor light emitting element includes a transparent substrate and at least one LED structure.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure.
  • the LED structure includes a first electrode and a second electrode.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • the semiconductor light emitting element includes a transparent substrate and at least one LED structure.
  • a material of the transparent substrate includes sapphire, and the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface The LED structure has a beam angle greater than 180 degrees. At least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • the semiconductor light emitting element includes a transparent substrate, at least one LED structure and a wavelength conversion layer.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least apart of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • the wavelength conversion layer is at least disposed on the LED structure or the second main surface. The wavelength conversion layer at least partially absorbs a light beam emitted from the LED structure and coverts the light beam into another light beams having different wavelength range.
  • the semiconductor light emitting element includes a transparent substrate and a plurality of LED structures.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structures are disposed on the support surface.
  • a light emitting surface of each LED structure uncovered by the transparent substrate and at least a part of the support surface without the LED structures form a first main surface where light emitted from.
  • Each of the LED structures has a beam angle greater than 180 degrees. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface.
  • An area of the first main surface or an area of the second main surface is larger than 5 times of a total area formed from at least one of the light emitting surfaces of each LED structure.
  • the semiconductor light emitting element includes a transparent substrate, at least one diamond-like carbon (DLC) film, and at least one LED structure.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the DLC film is disposed on the transparent substrate.
  • the LED structure is disposed on the support surface.
  • a light emitting surface of the LED structure uncovered by the transparent substrate and at least a part of the support surface without the LED structure forma first main surface where light emitted from.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • the semiconductor light emitting element includes a transparent substrate, at least one LED structure and a reflector.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the reflector is disposed on the second main surface.
  • the LED structure is disposed on the support surface.
  • a light emitting surface of the LED structure uncovered by the transparent substrate and at least a part of the support surface without the LED structure form a first main surface where light emitted from.
  • the LED structure has a beam angle greater than 180 degree.
  • the semiconductor light emitting element includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate.
  • the first connecting electrode and the second connecting electrode are electrically connected to the LED structure.
  • the illumination device includes a semiconductor light emitting element and a support.
  • the semiconductor light emitting element includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate.
  • the first connecting electrode and the second connecting electrode are electrically connected to the LED structure.
  • the support includes at least one opening, and the semiconductor light emitting element is disposed correspondingly to the opening.
  • the illumination device includes a plurality of semiconductor light emitting elements and a device frame.
  • Each of the semiconductor light emitting elements includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate.
  • the first connecting electrode and the second connecting electrode are electrically connected to the LED structure.
  • the device frame includes a supporting base and a plurality of supports extending outward from the supporting base. Each of the supports includes at least one opening, and the semiconductor light emitting elements are disposed correspondingly to at least some of the openings.
  • the illumination device includes a plurality of semiconductor light emitting elements and a light bar.
  • Each of the semiconductor light emitting elements includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate.
  • the first connecting electrode and the second connecting electrode are electrically connected to the LED structure.
  • the light bar includes a plurality of openings.
  • the light bar has an extending direction, and the openings are disposed along the extending direction.
  • the semiconductor light emitting elements are disposed correspondingly to at least some of the openings.
  • the illumination device includes a plurality of semiconductor light emitting elements and a supporting base.
  • Each of the semiconductor light emitting elements includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode.
  • the transparent substrate has a support surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate.
  • the first connecting electrode and the second connecting electrode are electrically connected to the LED structure.
  • the supporting base includes a plurality of openings. The openings are disposed as an array.
  • the semiconductor light emitting elements are disposed correspondingly to at least some of the openings
  • the device frame includes a supporting base and a plurality of supports. Each of the supports extends from the supporting base. Each of the supports includes at least one opening and a plurality of electrodes disposed on two sides of the opening.
  • the LED structure is fixed on the transparent substrate, and the transparent substrate allows the light beam emitted by the LED structure passing through. Accordingly, the illumination device in the present invention can emit light in at least multi-directions or all directions. The luminous efficiency of the illumination device may be accordingly enhanced, and the light shape of the LED illumination device may also be improved.
  • FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a semiconductor light emitting element according to a preferred embodiment of the present invention.
  • FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between a light emitting diode structure and conductors according to a preferred embodiment of the present invention.
  • FIG. 6 and FIG. 7 are schematic diagrams illustrating a disposition of a wavelength conversion layer according to a preferred embodiment of the present invention.
  • FIG. 8 is a cross-sectional diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIG. 9 is a cross-sectional diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIG. 10 is a schematic diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIG. 11 is a schematic diagram illustrating a supporting base according to a preferred embodiment of the present invention.
  • FIG. 12 is a schematic diagram illustrating a circuit board according to a preferred embodiment of the present invention.
  • FIG. 13 is a schematic diagram illustrating a reflector according to a preferred embodiment of the present invention.
  • FIG. 14 is a schematic diagram illustrating a diamond-like carbon film according to a preferred embodiment of the present invention.
  • FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 16 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 17 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 18-20 are schematic diagrams illustrating a transparent substrate inserted or bonded to a supporting base according to a preferred embodiment of the present invention.
  • FIG. 21 and FIG. 22 are schematic diagrams illustrating a transparent substrate bonded to a supporting base with supports according to a preferred embodiment of the present invention.
  • FIG. 23 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 24 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention.
  • FIG. 25 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 26-29 are schematic diagrams illustrating transparent substrates point-symmetrically or line-symmetrically disposed on a supporting structure according to a preferred embodiment of the present invention.
  • FIG. 30 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 31 and FIG. 32 are schematic diagrams illustrating a lamp housing according to a preferred embodiment of the present invention.
  • FIG. 33 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 34 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 35 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 36 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 37 is a structural diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIGS. 38-40 are schematic diagrams illustrating preferred optical units used in the embodiments shown in FIGS. 33-37 according to the present invention.
  • FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a semiconductor light emitting element according to a preferred embodiment of the present invention.
  • a semiconductor light emitting element 1 includes a transparent substrate 2 , a support surface 210 , a first main surface 21 A, a second main surface 21 B and at least one light emitting diode (LED) structure 3 providing light in multi-directions.
  • the transparent substrate 2 which is a sheet type substrate, has two main surfaces, and one of the surfaces is the support surface 210 .
  • the LED structure 3 capable of emitting light is disposed on the support surface 210 .
  • a light emitting surface 34 of the LED structure 3 uncovered by the transparent substrate 2 and at least a part of the support surface 210 without the LED structure form the first main surface 21 A where light emitted from.
  • the second main surface 21 B is another main surface of the transparent substrate 2 without the LED structures 3 .
  • the disposition described above may also be reversed, or the LED structure 3 may be disposed on the two surfaces of the transparent substrate 2 .
  • LED structures 3 may be disposed on the support surface 210 of the transparent substrate 2 interlacedly corresponding to other LED structures 3 disposed on the second main surface 21 B, such that light beams emitted from LED structures 3 on one surface of the transparent substrate 2 would not be blocked by other LED structures 3 on another surface of the transparent substrate 2 .
  • a material of the transparent substrate 2 such as sapphire, ceramic, glass, plastic, rubber or etc., may comprise one selected from aluminum oxide (Al2O3), magnesium oxide, beryllium oxide, yttrium oxide, thorium dioxide, zirconium dioxide, lead zirconium titanate, gallium arsenide, zinc sulfide, zinc selenide, calcium fluoride, magnesium fluoride, silicon carbide (SiC) or polymer.
  • the transparent substrate may be a sapphire substrate in a preferred embodiment of the present invention.
  • the structure of the sapphire substrate is substantially single crystal.
  • the sapphire substrate has properties of higher light transmittance and better heat dissipation capability.
  • the sapphire substrate may be used to increase the life time of the semiconductor light emitting element 1 .
  • the conventional sapphire substrate used for growing a conventional light emitting diode may be fragile when applied in the present invention.
  • the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness thicker than or equal to 200 micrometers so as to perform better reliability, supporting performance and transparency.
  • the LED structure 3 in this invention preferably has a beam angle greater than 180 degrees.
  • the LED structure 3 disposed on the transparent substrate 2 may emit light beams from the light emitting surface 34 toward a direction away from the transparent substrate 2 , and the LED structure 3 may also emit light beams at least partially entering the transparent substrate 2 .
  • the light beams entering the transparent substrate 2 may emerge from the second main surface 21 B opposite to the first main surface 21 A, and the light beams entering the transparent substrate 2 may also be emitted from a part of the support surface 210 without LED structures 3 or emitted from other surface of the transparent substrate 2 .
  • the semiconductor light emitting element 1 may then be capable of emitting light in multi-directions including dual-directions or full directions.
  • an area of the first main surface 21 A or an area of the second main surface 21 B is larger than 5 times of a total area formed from at least one of the light emitting surfaces 34 of each LED structure, and this is a preferred proportion according to the consideration of both the luminous efficiency and the heat dissipation performance.
  • a difference in color temperatures of light beams emitted from the first main surface 21 A and the second main surface 21 B is smaller than or equal to 1500K so as to uniform light emitting effects of the semiconductor light emitting element 1 .
  • a light transmittance of the transparent substrate 3 is larger than or equal to 70% for light beams having a wavelength range larger than or equal to 420 nanometers, or light beams having a wavelength rage smaller than or equal to 470 nanometers.
  • the LED structure 3 includes a first electrode 31 A and a second electrode 31 B for receiving electricity.
  • the first electrode 31 A and the second electrode 31 B are respectively and electrically connected to a first connecting conductor 23 A and a second connecting conductor 23 B on the transparent substrate 2 .
  • FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between the light emitting diode structure 3 and the conductors.
  • FIG. 3 illustrates a horizontal type LED structure, the LED structure 3 is formed on the support surface 210 of the transparent substrate 2 , and the electrodes 31 A and 31 B are coupled to the connecting conductors 23 A and 23 B by wire bonding.
  • the LED structure 3 is disposed reversely and electrically coupled to the transparent substrate 2 by the first electrode 31 A and the second electrode 31 B.
  • the first electrode 31 A and the second electrode 31 B may be directly coupled to the first connecting conductor 23 A and the second connecting conductor 23 B by welding or adhering.
  • the first electrode 31 A and the second electrode 31 B are disposed on different surfaces of the LED structure 3 , and the LED structure 3 is vertically disposed so as to respectively connect the electrodes 31 A and 31 B to the connecting conductors 23 A and 23 B.
  • the semiconductor light emitting element 1 in the present invention may further include a wavelength conversion layer 4 .
  • the wavelength conversion layer 4 may be selectively disposed on the first main surface 21 A or/and the second main surface 21 B, or directly on the LED structures 3 .
  • the wavelength conversion layer 4 may directly contact the LED structures 3 , or the wavelength conversion layer 4 may be separated from the LED structures 3 by a distance without directly contact.
  • the wavelength conversion layer 4 contains at least one kind of fluorescent powders such as organic fluorescent powder or inorganic fluorescent powder of garnet series, sulfate series or silicate series.
  • the wavelength conversion layer 4 may then be able to at least partially absorb a light beam emitted from the LED structure 3 and covert the light beam into another light beams having different wavelength range.
  • a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4 , and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the semiconductor light emitting element 1 .
  • a luminance of the first main surface 21 A is different from a luminance of the second main surface 21 B because a light source of the first main surface 21 A mainly comes from light beams directly emitted from the LED structure 3 , and a light source of the second main surface 21 B comes from light beams passing through the transparent substrate 2 .
  • concentrations of the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21 A and the wavelength conversion layer 4 disposed on the second main surface 21 B are arranged correspondingly.
  • a ratio of a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the first main surface 21 A to a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21 B may ranges from 1:0.5 to 1:3, or a ratio of the fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21 B to the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21 A may ranges from 1:0.5 to 1:3.
  • the luminance and the lighting effect of the semiconductor light emitting element 1 may become more appropriate for different applications accordingly.
  • a difference in color temperatures of light beams emitted from the first main surface 21 A and the second main surface 21 B may then be controlled to be smaller than or equal to 1500K.
  • a wavelength converting efficiency and light emitting performance of the semiconductor light emitting element 1 may then be enhanced.
  • FIG. 8 is a cross-sectional diagram illustrating a semiconductor light emitting element 1 according to another preferred embodiment of the present invention.
  • the semiconductor light emitting element 1 in this embodiment includes a transparent substrate 2 and at least one LED structure 14 providing light in multi-directions.
  • the transparent substrate 2 has a support surface 210 and a second main surface 21 B disposed opposite to each other.
  • the LED structure 14 is disposed on the support surface 210 of the transparent substrate 2 .
  • the LED structure 14 includes a first electrode 16 and a second electrode 18 .
  • the first electrode 16 and the second electrode 18 are configured to be electrically connected to other devices.
  • a light emitting surface 34 of the LED structure 14 uncovered by the transparent substrate 2 and at least a part of the support surface 210 without the LED structure 14 form a first main surface 21 A where light emitted from.
  • the LED structure 14 may include a substrate 141 , an N-typed semiconductor layer 142 , an active layer 143 and a P-typed semiconductor layer 144 .
  • the substrate 141 of the LED structure 14 may be attached on the transparent substrate 2 by such as a chip bonding layer 28 .
  • a light intensity may also be increased by optimizing the material property of the chip bonding layer 28 .
  • a refractive index of the chip bonding layer 28 is preferably between a refractive index of the substrate 141 and a refractive index of the transparent substrate 2 so as to increase the intensity of light emitted from the LED structure 14 .
  • the chip bonding layer 28 may be a transparent adhesive or other appropriate bonding material.
  • the first electrode 16 and the second electrode 18 are disposed on the side of the LED structure 14 opposite to the chip bonding layer 28 .
  • the first electrode 16 and the second electrode 18 are electrically connected to the P-typed semiconductor layer 144 and the N-typed semiconductor layer 142 respectively ( FIG. 8 does not show the connecting relation between the second electrode 18 and the N-typed semiconductor layer 142 ).
  • Horizontal level of an upper surface of the first electrode 16 and an upper surface of the second electrode 18 are substantially the same.
  • the first electrode 16 and the second electrode 18 may be metal electrodes, but not limited thereto.
  • the semiconductor light emitting element 1 further includes a first connecting conductor 20 , a second connecting conductor 22 and a wavelength conversion layer 4 .
  • the first connecting conductor 20 and the second connecting conductor 22 are disposed on the transparent substrate 2 .
  • the first connecting conductor 20 and the second connecting conductor 22 may be metal wires or other conductive patterns, but not limited thereto.
  • the first electrode 16 and the second electrode 18 are respectively connected to the first connecting conductor 20 and the second connecting conductor 22 electrically by wire bonding or welding, but not limited thereto.
  • the wavelength conversion layer 4 is disposed on the transparent substrate 2 , and the wavelength conversion layer 4 may cover the LED structure 14 . Additionally, the wavelength conversion layer 4 may further cover the second main surface 21 B of the transparent substrate 2 .
  • a non-planar structure 12 M may be selectively disposed on the surfaces of the transparent substrate 2 for increasing the intensity of light emitted from the transparent substrate 2 and unifying the distribution of the emitted light.
  • the non-planar structure 12 M may be a convex geometric structure or a concave geometric structure, such as a pyramid, a cone, a hemispheroid, a triangular prism and so forth.
  • the non-planar structures 12 M may be arranged regularly or randomly.
  • a diamond-like carbon (DLC) film 25 may be selectively disposed on the surfaces of the transparent substrate 2 so as to enhance the thermal conductive ability and the heat dissipating performance.
  • DLC diamond-like carbon
  • FIG. 9 is a cross-sectional diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • the first electrode 16 , the second electrode 18 and a first chip bonding layer 28 A are disposed on the same surface of the LED structure 14 . That the first electrode 16 and the second electrode 18 are electrically connected to the first connecting conductor 20 and the second connecting conductor 22 by flip chip.
  • the first connecting conductor 20 and the second connecting conductor 22 may respectively extend corresponding to the positions of the first electrode 16 and 18 .
  • the first electrode 16 and the second electrode 18 may be respectively connected to the first connecting conductor 20 and the second connecting conductor 22 electrically through a second chip bonding layer 28 B.
  • the second chip bonding layer 28 B may be a conductive bump such as a gold bump or a solder bump, a conductive glue such as a silver glue, or an eutectic layer such as an Au—Sn alloy eutectic layer or an In—Bi—Sn alloy eutectic layer, but not limited to this.
  • the first chip bonding layer 28 A under the LED structure 14 may not be required or may be replaced by the wavelength conversion layer 4 .
  • FIG. 10 is a schematic diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • a semiconductor light emitting element 310 in this invention includes the transparent substrate 2 , at least one LED structure 3 , a first connecting electrode 311 A, a second connecting electrode 311 B and at least one wavelength conversion layer 4 .
  • the LED structure 3 is disposed on the support surface 210 of the transparent substrate 2 and forms a first main surface 21 A where light emitted from.
  • the LED structure 3 has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure 3 penetrate into the transparent substrate 2 .
  • At least a part of the penetrating light beams may be emitted from a second main surface 21 B which is opposite to the first main surface 21 A, and the other penetrating light beams may be emitted from other surfaces of the transparent substrate 2 , so as to form the semiconductor light emitting element 310 providing light in multi-directions.
  • the first connecting electrode 311 A and the second connecting electrode 311 B are respectively disposed on different sides of the transparent substrate 2 or on the same side of the transparent substrate 2 (not shown in FIG. 10 ).
  • the first connecting electrode 311 A and the second connecting electrode 311 B may be electrodes of the semiconductor light emitting element 310 respectively formed by extension parts of a first connecting conductor and a second connecting conductor on the transparent substrate 2 , and the first connecting electrode 311 A and the second connecting electrode 311 B are electrically connected to the LED structure 3 accordingly.
  • the wavelength conversion layer 4 at least covers the LED structure 3 and exposes at least a part of the first connecting electrode 311 A and the second connecting electrode 311 B.
  • the wavelength conversion layer 4 at least partially absorbs a light beam emitted from the LED structure 3 or/and the transparent substrate 2 , and coverts the light beam into alight beam having another wavelength range.
  • the converted light and the light which are not absorbed by the wavelength conversion layer 4 are mixed to extend the total wavelength range of the light beams emitted from the semiconductor light emitting element 310 and improve the light emitting performance of the semiconductor light emitting element 310 .
  • the semiconductor light emitting element 310 in this embodiment includes the first connecting electrode 311 A and the second connecting electrode 311 B respectively disposed on the transparent substrate 2 , traditional LED packaging process may be omitted and the semiconductor light emitting element 310 may be independently manufactured and then combined with an appropriate supporting base. Accordingly, the total manufacturing yield may be improved, the structure may be simplified and applications of the corresponding supporting base may also be increased.
  • the illumination device 11 includes a supporting base 5 and the semiconductor light emitting element described above.
  • the transparent substrate 2 of the semiconductor light emitting element may stand on (or lie on) and be electrically coupled to the supporting base 5 .
  • a first angle ⁇ 1 exists between the transparent substrate 2 and the supporting base 5 .
  • the first angle ⁇ 1 may be fixed or be adjusted according to the light shape requirement of the illumination device. Preferably, the first angle ⁇ 1 ranges from 30 degrees to 150 degrees.
  • the supporting base 5 of the illumination device 11 in the present invention may further include a circuit board 6 electrically coupled to a power supply.
  • the circuit board 6 is electrically coupled to a first connecting conductor and a second connecting conductor (not shown in FIG. 12 ) so as to be electrically connected to the LED structure 3 .
  • the power supply may then provide electricity to the LED ship 3 for emitting light via the circuit board 6 .
  • the LED structure 3 may also be electrically connected to the supporting base directly via the first connecting conductor and the second connecting conductor (not shown in FIG. 12 ) without the circuit board 6 , and the power supply may provide electricity to the LED ship 3 via the supporting base 5 .
  • the illumination device 11 of the present invention may further include a reflector or filter 8 disposed on the second main surface 21 B or the support surface 210 .
  • the reflector or filter 8 may be used to reflect at least a part of light beams emitted from the LED structure 3 and passing through the transparent substrate 2 . At least a part of the reflected light beams may be changed to be emitted from the first main surface 21 A.
  • the reflector 8 may include at least one metal layer or a Bragg reflector, but not limited thereto.
  • the Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes disposed in a stack configuration, or the Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes and a plurality of metal oxide layers disposed in a stack configuration.
  • the illumination device 11 of the present invention may further include a diamond-like carbon (DLC) film 9 disposed on the support surface 210 or/and the second main surface 21 B of the transparent substrate 2 so as to enhance the thermal conductive ability and the heat dissipating performance.
  • DLC diamond-like carbon
  • FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 10 in this embodiment includes a supporting base 26 and the semiconductor light emitting element described in the present invention.
  • the semiconductor light emitting element includes a transparent substrate 2 and at least one LED structure 14 .
  • the semiconductor light emitting element may be at least partially embedded into the supporting base 26 .
  • An electrode 30 and an electrode 32 of the supporting base 26 are electrically connected to the connecting conductors of the semiconductor light emitting element.
  • Driving voltage V+ and V ⁇ may be accordingly provided through the electrodes 30 and 32 respectively to the LED structure 14 for emitting the light beam L.
  • the LED structure 14 includes a first electrode 16 and a second electrode 18 respectively and electrically connected to the first connecting conductor 20 and the second connecting conductor 22 by wire bonding, but not limited thereto. Additionally, the LED structure 14 has a beam angle greater than 180 degrees or has a plurality of light emitting surfaces, and then the illumination device 10 may emit light beams from the first main surface 21 A and the second main surface 21 B. Furthermore, because some of the light beams may be emitted directly from the LED structure 14 and/or the other four side surfaces of the transparent substrate 2 , the illumination device 10 may accordingly emit light from multi sides or six sides or in full directions.
  • the semiconductor light emitting element may further include a wavelength conversion layer 4 selectively disposed on the LED structure 14 , the first main surface 21 A or the second main surface 21 B.
  • the wavelength conversion layer 4 may at least partially absorb a light beam emitted from the LED structure 14 and covert the light beam into another light beam having different wavelength range so as to emit light with specific color or light having a wider wavelength range from the illumination device 10 .
  • a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4 , and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the illumination device 10 .
  • the transparent substrate 2 may be directly or indirectly fixed on the supporting base 26 in a parallel state or a non-parallel state.
  • the transparent substrate 2 may be vertically fixed on the supporting base 26 by mounting a side wall of the transparent substrate 2 with the supporting base 26 directly, or the transparent substrate 2 may be horizontally disposed on the supporting base 26 , but not limited thereto.
  • the transparent substrate 2 preferably includes materials with high thermal conductivity, and heat generated from the LED structure 14 may be accordingly dissipated to the supporting base 26 through the transparent substrate 2 , such that the high power LED structures can be applied in the illumination device of the present invention accordingly.
  • a power of the LED structure in this embodiment may be equal to or lower than 0.2 watt, but not limited thereto.
  • FIG. 16 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 10 ′ in this embodiment includes a plurality of LED structures 14 , and at least some of the LED structures 14 are electrically connected to each other in series.
  • Each of the LED structures 14 includes the first electrode 16 and the second electrode 18 .
  • the first electrode 16 of one LED structure 14 disposed on one end of the series is electrically connected to the first connecting conductor 20
  • the second electrode 18 of another LED structure 14 disposed on another end of the series is electrically connected to the second connecting conductor 22 , but not limited thereto.
  • the LED structures 14 may be electrically connected in series or in parallel.
  • the LED structures 14 may be LED structures emitting identical color, such as blue LED structures, or LED structures emitting different colors may also be applied and combined according to different demands.
  • the illumination device 10 ′ may emit light in much more different colors by further employing the wavelength conversion layer 4 according to the present invention.
  • FIG. 17 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 50 in this embodiment further includes a support 51 configured to connect the semiconductor light emitting element and the supporting base 26 .
  • the transparent substrate 2 of the semiconductor light emitting element is fixed on a side of the support 51 by a unit bonding layer 52 , and another side of the support 51 may be disposed on or inserted into the supporting base 26 .
  • the support 51 is flexible so as to form an angle between the transparent substrate 2 and the supporting base 26 , and the angle ranges from 30 degrees to 150 degrees.
  • a material of the support 51 may include one selected from aluminum, composite metallic material, copper conductor, electric wire, ceramic substrate, printed circuit board, or other appropriate materials.
  • the transparent substrate 2 in the present invention When the transparent substrate 2 in the present invention is disposed on a supporting base 5 , the transparent substrate 2 may be inserted or bonded to the supporting base 5 .
  • the transparent substrate 2 When the transparent substrate 2 is disposed on the supporting base 5 , the transparent substrate 2 is inserted in to a single socket 61 of the supporting base 5 , and the semiconductor light emitting element may be electrically coupled to the single socket 61 via connecting conductors.
  • the LED structures (not shown in FIG. 18 ) on the transparent substrate 2 have to be electrically coupled to a power supply from or through the supporting base 5 , and at least part of the conductive pattern or the connecting conductors are extended to an edge of the transparent substrate 2 and integrated in to an connecting finger having a plurality of conductive contact sheets or an electrically connecting port such as the connecting electrodes 311 A and 311 B described above (not shown in FIG. 18 ).
  • the LED structure When the transparent substrate 2 is inserted into the socket 61 , the LED structure (not shown in FIG. 18 ) may then receive electricity from or through the supporting base 5 , and the transparent substrate 2 may be fixed by the socket 61 of the supporting base 5 accordingly.
  • FIG. 19 is a schematic diagram illustrating the transparent substrate 2 inserted into a multi sockets of the supporting base 5 .
  • the transparent substrate 2 has a dual-pin structure.
  • One of the pins may be configured as a positive electrode of the device, and another one of the pins may be configured as a negative electrode of the device.
  • Both of the pins have at least one conductive contact sheet respectively so as to act as connecting ports.
  • there are at least two sockets 61 having corresponding shape and size with the pins so as to smoothly insert the transparent substrate 2 into the supporting base 5 and provide electricity to the LED structure.
  • the transparent substrate 2 is bonded to the supporting base 5 by the device bonding layer.
  • metal materials such as gold, tin, indium, bismuth or silver may be used in combining or welding the transparent substrate 2 and the supporting base 5 .
  • conductive silica gel or epoxy material may also be used in fixing the transparent substrate 2 on the supporting base 5 .
  • the conductive pattern and the connecting conductors of the semiconductor light emitting element may be electrically connected to the supporting base via the device bonding layer accordingly.
  • the supporting base 5 of the illumination device 11 described in the present invention may be a substrate comprising one selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board.
  • the support 62 may be separated from the supporting base 5 , or the support 62 and the supporting base 5 are monolithically integrated.
  • the semiconductor light emitting element may be electrically coupled to the support 62 by bonding, and a device bonding layer 63 is used to fix the transparent substrate 2 on the supporting base 5 .
  • the first angle ⁇ 1 is maintained between the transparent substrate 2 and a surface of the supporting base 5 without supports.
  • the semiconductor light emitting elements may also be disposed on the surface of the supporting base 5 without supports so as to enhance the light emitting performance of the illumination device 11 . Additionally, the semiconductor light emitting element may also be inserted and connected to the support 62 (not shown in FIG. 21 and FIG. 22 ), wherein a connector may be used to connect the semiconductor light emitting element and the support (and/or the support and the supporting base) so as to fix the transparent substrate 2 on the supporting base 5 . Because the supporting base 5 and the support 62 are flexible, it is more convenient to apply the present invention to different applications. Moreover, the color variety of the illumination device 11 may be enhanced for different demands by combining using the semiconductor light emitting elements having different light color.
  • an illumination device in this embodiment includes at least one semiconductor light emitting element 1 and a supporting base 5 .
  • the supporting base 5 includes at least one support 62 and at least one circuit pattern P.
  • An end of the transparent substrate of the semiconductor light emitting element 1 is electrically coupled to the support 62 so as to avoid or reduce the shielding influence caused by the support 62 for light emitting from the semiconductor light emitting element 1 .
  • the supporting base 5 may be selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board.
  • the support 62 may be formed by cutting and bending a part of the supporting base 5 to form an angle (as the first angle ⁇ 1 shown in FIG. 21 and FIG. 22 ).
  • the circuit pattern P is disposed on supporting base 5 , and the circuit pattern P has at least one set of electrical port to be electrically connected to a power supply. Another part of the circuit pattern P extends on the support 62 so as to be electrically connected to the semiconductor light emitting element 1 , and the semiconductor light emitting element 1 may than be electrically connected to the power supply via the circuit pattern P of the supporting base 5 .
  • the supporting base 5 may further include at least one hole H or at least one gap G, and fixing devices such as screws, nails or bolts may be used to combine the supporting base 5 with other device via the hole H or the gap G according to the application conditions of the illumination device. Meanwhile, the hole H or the gap G may also be used to increase the heat radiating area and enhance the heat dissipation capability of the illumination device.
  • FIG. 24 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention.
  • a device frame 322 in this embodiment includes a supporting base 5 and at least one support 62 .
  • the support 62 in this embodiment includes at least one stripe part 342 and an opening 330 .
  • the electrode 30 and the electrode 32 are respectively disposed on two sides of the opening 330 .
  • the stripe part 342 forms at least one wall of the opening 330 .
  • One semiconductor light emitting element described in the present invention is disposed correspondingly to the opening 330 and electrically coupled to the support 62 .
  • the connecting conductors of the semiconductor light emitting element is electrically connected to the electrode 30 and the electrode 32 so as to drive the semiconductor light emitting element by a power supply via the support 62 and the circuit pattern on the supporting base 5 .
  • a size of the opening 330 may not be smaller than a main light emitting surface of the semiconductor light emitting element so as to prevent light beams emitted from the semiconductor light emitting element from being blocked by the support 62 .
  • a connection part between the support 62 and the supporting base 5 may be adjustable so as to adjust the angle between the support 62 and the supporting base 5 as required.
  • FIG. 25 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 302 shown in FIG. 25 further includes at least one support 62 having a plurality of openings 330 .
  • the openings 330 are respectively disposed on two opposite sides of the support 62 , and the stripe part 342 forms at least one wall of each opening 330 .
  • the semiconductor light emitting element 310 are disposed correspondingly to the openings 330 , and the conductive pattern or the connecting electrodes (not shown in FIG. 25 ) of each semiconductor light emitting element 310 are respectively disposed correspondingly and electrically connected to the electrode 30 and 32 .
  • the illumination device 302 in this embodiment may further include a plurality of the supports 62 .
  • the support 62 is disposed between the semiconductor light emitting element 1 and the supporting base 5 .
  • a length of the support 62 may substantially range from 5.8 to 20 um.
  • Angles between the supporting base 5 and the supports 62 with the semiconductor light emitting element disposed on may be modified respectively. In other words, an angle between the supporting base 5 and at least one of the supports 62 may be different from an angle between the supporting base 5 and another one of the supports 62 so as to perform required light emitting effects, but not limited thereto.
  • semiconductor light emitting elements emitting light having different wavelength ranges may be disposed on an identical support or on different supports so as to enrich the color effect of the illumination device.
  • a plurality of the semiconductor light emitting elements comprising the transparent substrates are disposed on the supporting bases detailed above or on other supporting structures.
  • a point-symmetric distribution or a line-symmetric distribution may be applied.
  • the semiconductor light emitting elements comprising the transparent substrates may be point-symmetrically disposed on the supporting structure or line-symmetrically disposed on the supporting structure.
  • FIGS. 26-29 In the illumination devices of the embodiments shown in FIGS. 26-29 , the semiconductor light emitting elements are disposed on the supporting structures having different shapes.
  • the light beams emitted from the illumination devices 11 may be uniform because of the point-symmetric distribution or the line-symmetric distribution (the LED structures are not shown in FIGS. 26-29 ).
  • the light emitting effects of the illumination devices 11 may be further improved by adjusting the first angle described above.
  • the semiconductor light emitting elements are point-symmetrically arranged and form an angle between each other in 90 degrees. Therefore, at least two of the semiconductor light emitting elements may face any one of the four sides of the illumination device 11 .
  • the angle between the semiconductor light emitting elements is smaller than 90 degrees.
  • the angle between the semiconductor light emitting elements is larger than 90 degrees.
  • the semiconductor light emitting elements may be asymmetrically disposed and at least apart of the semiconductor light emitting elements may be disposed in a crowd or separately disposed so as to perform required light shape according to different applications of the illumination device.
  • FIG. 30 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 301 includes a semiconductor light emitting element 310 and a support 321 .
  • the support 321 includes an opening 330 , and the semiconductor light emitting element 310 is disposed correspondingly to the opening 330 .
  • an external part of the support 321 may be work as a pin or be bent to form a connecting pad required in surface mounting so as to be fixed and electrically connected to other electrical circuit units.
  • a light emitting surface of the semiconductor light emitting element 310 is disposed in the opening 330 , and the illumination device 301 may still emit light from multi sides or six sides accordingly whether the support 321 is transparent or not.
  • the illumination device includes a lamp housing 7 having a tube shape, at least one semiconductor light emitting element 1 and a supporting structure 60 .
  • the semiconductor light emitting element 1 is disposed on the supporting structure 60 , and at least a part of the semiconductor light emitting element 1 is disposed in space formed by the lamp housing 7 .
  • FIG. 32 When more semiconductor light emitting elements 1 are disposed in the lamp housing 7 , the first main surfaces 21 A of the semiconductor light emitting elements 1 are arranged separately and not parallel to one another.
  • the semiconductor light emitting elements 1 are at least partially disposed in space formed by the lamp housing 7 , and the semiconductor light emitting elements 1 are not closely adjacent to an inner wall of the lamp housing 7 .
  • a distance D between the semiconductor light emitting element 1 and the lamp housing 7 may be equal to or larger than 500 micrometers.
  • the lamp housing 7 may also be formed by filling glue, and the lamp housing 7 may at least partially cover and directly contact the semiconductor light emitting element 1 .
  • FIGS. 33-37 are structural diagrams illustrating an illumination device 10 for providing a dazzling light according to different embodiments of the present invention.
  • the illumination device 10 may comprise a support 62 , a semiconductor light emitting element 1 disposed on the support 62 , and an optical unit 70 disposed on the semiconductor light emitting element 1 .
  • the semiconductor light emitting element 1 may comprise the same structure and provide light in multi-directions as disclosed in above embodiments according to the present invention.
  • the semiconductor light emitting element 1 may be shaped like a card, a stick, a popsicle, a cube, or a candle.
  • the optical unit 70 may include a covering side 72 and a light dispersion side 74 .
  • the covering side 72 and the light dispersion side 74 are opposite and correspond to each other.
  • the covering side 72 faces the semiconductor light emitting element 1 as the optical unit 70 is disposed on the semiconductor light emitting element 1 .
  • the optical unit 70 further includes at least one optical structure 76 disposed on the light dispersion side 74 , and a surface of the light dispersion side 74 , without the optical structure 76 disposed thereon, may be formed as a flat surface.
  • the optical structure 76 may be shaped like a pyramid or a part of a diamond. An amount of the optical structure 76 can be one or more, which depends on design demand.
  • the optical structures 76 are disposed in an array arrangement, an interlaced arrangement or a concentric arrangement, which are respectively shown in FIGS. 38-40 .
  • the optical structure 76 is adapted to disperse the light received from the covering side 72 to different directions. Refraction angle of the light, which passes through the optical structure 76 , is varied and corresponds to wavelength of the light and refractive index difference between the optical structure 76 and environmental medium (such as air).
  • the semiconductor light emitting element 1 includes a transparent substrate 2 having a support surface 210 and a second main surface 21 B disposed opposite to each other, and a light emitting diode (LED) structure 14 disposed on the support surface 210 of the transparent substrate 2 .
  • LED light emitting diode
  • An amount of the LED structure 14 may be one or more.
  • the optical unit 70 is disposed on the first main surface 21 A of the semiconductor light emitting element 1 , and a wavelength conversion layer 4 is sandwiched by the optical unit 70 and the transparent substrate 2 .
  • a surface of the covering side 72 is substantially parallel to a corresponding surface of the wavelength conversion layer 4 .
  • the optical unit 70 may further include a first dispersion portion 78 , a second dispersion portion 80 and a connection portion 82 .
  • the connection portion 82 is connected between the first dispersion portion 78 and the second dispersion portion 80 , so that a section view of the optical unit 70 can be a U-shaped form.
  • the first dispersion portion 78 and the second dispersion portion 80 respectively cover the first main surface 21 A and the second main surface 21 B of the transparent substrate 2 .
  • An inner surface 821 of the connection portion 82 faces a side surface 2 a of the transparent substrate 2 , and a recess 84 can be formed on the surface 821 .
  • a section view of the recess 84 of the connection portion 82 includes a recess angle ⁇ 2, which may be ranged from 70 to 140 degrees.
  • the recess angle ⁇ 2 may be preferably equal or close to 90 degrees.
  • an outer surface 823 of the connection portion 82 which extends from the light dispersion side 74 , is flat. The light can emerge from the surface 823 of the connection portion 82 and the light dispersion sides 74 of the dispersion portions 78 , 80 .
  • an optical unit 70 of an illumination device 10 may further selectively include at least one optical structure 76 disposed on an outer surface 823 of a connection portion 82 , which means the optical structures 76 may be disposed on a connection portion 82 and dispersion portions 78 , 80 of the optical unit 70 .
  • a connection portion 82 of an optical unit 70 may include a convex portion 86 .
  • the convex portion 86 may comprise a curvature radius ranged from 0.01 to 10 mm, and a preferably value of the curvature radius of the convex portion 86 may be equal or close to 3 mm.
  • the convex portion 86 can be adapted to disperse the light emitted from a semiconductor light emitting element 1 (or an LED structure 14 ) through an upper end of the optical unit 70 .
  • a sectional view of the optical structure 73 disposed on the first dispersion portion 78 or the second dispersion portion 80 may be shaped like a triangle, and the triangle includes a tip angle ⁇ 3 which may range from 30 to 140 degrees.
  • the optical structure 73 disposed on the surface 823 of the connection portion 82 may be also shaped like a triangle, and the triangle includes a tip angle ⁇ 3 which may range from 50 to 140 degrees.
  • the tip angles ⁇ 3 of the optical structures 73 disposed on first dispersion portion 78 , the second dispersion portion 80 and/or the connection portion 82 may be preferably equal or close to 70 degrees.
  • a distance D1 between the covering side 72 of the optical unit 70 and the wavelength conversion layer 4 may exist and be ranged from 0 to 2 mm.
  • the distance D1 between the covering side 72 and the wavelength conversion layer 4 is preferably equal or close to 0.2 mm.
  • a distance D2 between the connection portion 82 of the optical unit 70 and the side surface 2 a of the transparent substrate 2 may exist and be ranged from 0 to 2 mm.
  • the distance D2 between the connection portion 82 and the side surface 2 a is preferably equal or close to 0.2 mm.
  • a distance D3 between the covering side 72 of the optical unit 70 and the LED structure 14 may exist and be ranged from 0 to 2 mm. The distance D3 is similar to the distance D1 because the wavelength conversion layer 4 may be laid on the LED structure 14 .
  • FIG. 36 is a schematic diagram illustrating an illumination device 11 according to another preferred embodiment of the present invention.
  • the illumination device 11 may further include an optical unit 70 disposed on a semiconductor light emitting element 1 , and a crystal member 88 which covers the optical unit 70 and the semiconductor light emitting element 1 .
  • the illumination device 11 may comprise a supporting base 5 , three supports 62 coupled with the supporting base, three semiconductor light emitting elements 1 respectively disposed on the supports 62 , and the crystal member 88 covering the semiconductor light emitting elements 1 .
  • the supports 62 with the semiconductor light emitting elements 1 may be symmetrically disposed on the supporting base 5 .
  • Each of the semiconductor light emitting elements 1 may comprise at least two light emitting surfaces opposite to each other, and optical units 70 having a plurality of optical structures 76 may be disposed on the both surfaces of the semiconductor light emitting elements 1 , and therefore the semiconductor light emitting element 1 may be sandwiched by the optical units 76 .
  • the optical unit 70 may be a sheet type element, as shown in FIGS. 38-40 , and bonded to the semiconductor light emitting element 1 .
  • the crystal member 88 may have a space and the semiconductor light emitting elements 1 with the optical units 70 are disposed in the space. A distance between each of the semiconductor light emitting elements 1 and the crystal member 88 may range from 0 to 20 cm.
  • the light emitted from the semiconductor light emitting element 1 can be dispersed by the optical structures 76 of the optical unit 70 , and be refracted by the crystal member 88 , so that the illumination device 11 according to the present invention can provide bifurcation brilliance and be used for chandelier application.
  • FIG. 37 is an exploded diagram illustrating a semiconductor light emitting element 1 ′ according to another preferred embodiment of the present invention.
  • the semiconductor light emitting element 1 ′ may include a cube-shaped light emitting unit 90 and an optical unit 70 .
  • the cube-shaped light emitting unit 90 may include at least two light emitting surfaces 92 opposite to each other.
  • the optical unit 70 is disposed on at least one of the light emitting surfaces 92 of the cube-shaped light emitting unit 90 .
  • a first dispersion portion 78 and a second dispersion portion 80 of the optical unit 70 respectively cover the opposite light emitting surfaces 92 , and a covering side 72 of the optical unit 70 faces the cube-shaped light emitting unit 90 .
  • a plurality of optical structures 76 are disposed on the light dispersion side 74 of the optical unit 70 , which is opposite to the covering side 72 , and is utilized to disperse the light received from the covering side 72 to different directions corresponding to the wavelength of the light and the refractive index difference between the optical structure 76 and the environmental medium.
  • a medium within the distance D1, D2, D3 between the optical unit 70 and the light emitting unit 90 can be glue, air or a vacuum.
  • the optical unit 70 is made of light guiding material, and is adapted to guide the light emitted from the light emitting unit 90 to be out of the first dispersion portion 78 , the second dispersion portion 80 and the connection portion 82 via the optical structures 76 disposed on the light dispersion sides 74 and the surface 823 . Therefore, the optical unit 70 has light guiding function and light dispersing function to show beautifully brilliant performance.
  • the optical structure 76 can be a polygon taper, such as the trigonal pyramid, the quadrangular pyramid and so on. The light passing through the optical unit 70 is dispersed by the optical structure 76 , so that the semiconductor light emitting element 1 may emit the light with non-directional property and can be used for providing bifurcation and gorgeous brilliance.

Abstract

A semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) chips. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An illumination device includes the semiconductor light emitting element and a supporting base. The semiconductor light emitting element is disposed on the supporting base, and an angle is formed between the semiconductor light emitting element and the supporting base.

Description

    CROSS REFERENCE TO RELATED APPLICATIONS
  • This is a Continuation in Part application of Ser. No. 13/903,998, now pending, filed on May 28, 2013.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a semiconductor light emitting element and an illumination device thereof, and more particularly, to a semiconductor light emitting element providing light in multi-directions, and an illumination device including the semiconductor light emitting element.
  • 2. Description of the Prior Art
  • A light beam emitted from a light emitting diode (LED) is a kind of directional light source, which is different from a dispersive light source of a conventional bulb. Accordingly, applications of LED are limited. For instance, the conventional LED cannot or may be hard to provide required lighting effect for indoor and outdoor illumination applications. Additionally, conventional LED illumination devices emit light beams from a single side and luminous efficiency of the conventional LED illumination device is relatively low accordingly.
    • SUMMARY OF THE INVENTION
  • It is one of the objectives of the present invention to provide a semiconductor light emitting element providing light in multi-directions, an illumination device including the semiconductor light emitting element, and a device frame of the illumination device. The purposes of luminous efficiency enhancement, light shape improvement, and cost reduction may then be achieved.
  • A preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate and a plurality of light emitting diode (LED) structures. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with at least a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface.
  • A preferred embodiment of the present invention provides an illumination device. The illumination device includes at least one semiconductor light emitting element and a supporting base. The semiconductor light emitting element includes a transparent substrate and a plurality of LED structures. The transparent substrate has a support surface and a second main surface disposed opposite to each other. At least some of the LED structures are disposed on the support surface and form a first main surface where light emitted from with at least a part of the support surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. The semiconductor light emitting element is disposed on the supporting base, and a first angle may exist between the semiconductor light emitting element and the supporting base.
  • Another preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate and at least one LED structure. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The LED structure includes a first electrode and a second electrode. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • Another preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate and at least one LED structure. A material of the transparent substrate includes sapphire, and the transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface The LED structure has a beam angle greater than 180 degrees. At least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • Another preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate, at least one LED structure and a wavelength conversion layer. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least apart of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface. The wavelength conversion layer is at least disposed on the LED structure or the second main surface. The wavelength conversion layer at least partially absorbs a light beam emitted from the LED structure and coverts the light beam into another light beams having different wavelength range.
  • Another preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate and a plurality of LED structures. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structures are disposed on the support surface. A light emitting surface of each LED structure uncovered by the transparent substrate and at least a part of the support surface without the LED structures form a first main surface where light emitted from. Each of the LED structures has a beam angle greater than 180 degrees. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An area of the first main surface or an area of the second main surface is larger than 5 times of a total area formed from at least one of the light emitting surfaces of each LED structure.
  • Another preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate, at least one diamond-like carbon (DLC) film, and at least one LED structure. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The DLC film is disposed on the transparent substrate. The LED structure is disposed on the support surface. A light emitting surface of the LED structure uncovered by the transparent substrate and at least a part of the support surface without the LED structure forma first main surface where light emitted from. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • Another preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate, at least one LED structure and a reflector. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The reflector is disposed on the second main surface. The LED structure is disposed on the support surface. A light emitting surface of the LED structure uncovered by the transparent substrate and at least a part of the support surface without the LED structure form a first main surface where light emitted from. The LED structure has a beam angle greater than 180 degree.
  • Another preferred embodiment of the present invention provides a semiconductor light emitting element. The semiconductor light emitting element includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate. The first connecting electrode and the second connecting electrode are electrically connected to the LED structure.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a semiconductor light emitting element and a support. The semiconductor light emitting element includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate. The first connecting electrode and the second connecting electrode are electrically connected to the LED structure. The support includes at least one opening, and the semiconductor light emitting element is disposed correspondingly to the opening.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a plurality of semiconductor light emitting elements and a device frame. Each of the semiconductor light emitting elements includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate. The first connecting electrode and the second connecting electrode are electrically connected to the LED structure. The device frame includes a supporting base and a plurality of supports extending outward from the supporting base. Each of the supports includes at least one opening, and the semiconductor light emitting elements are disposed correspondingly to at least some of the openings.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a plurality of semiconductor light emitting elements and a light bar. Each of the semiconductor light emitting elements includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate. The first connecting electrode and the second connecting electrode are electrically connected to the LED structure. The light bar includes a plurality of openings. The light bar has an extending direction, and the openings are disposed along the extending direction. The semiconductor light emitting elements are disposed correspondingly to at least some of the openings.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a plurality of semiconductor light emitting elements and a supporting base. Each of the semiconductor light emitting elements includes a transparent substrate, at least one LED structure, a first connecting electrode and a second connecting electrode. The transparent substrate has a support surface and a second main surface disposed opposite to each other. The LED structure is disposed on the support surface and forms a first main surface where light emitted from with at least a part of the support surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting electrode and the second connecting electrode are respectively disposed on different sides of the transparent substrate. The first connecting electrode and the second connecting electrode are electrically connected to the LED structure. The supporting base includes a plurality of openings. The openings are disposed as an array. The semiconductor light emitting elements are disposed correspondingly to at least some of the openings.
  • Another preferred embodiment of the present invention provides a device frame of an illumination device. The device frame includes a supporting base and a plurality of supports. Each of the supports extends from the supporting base. Each of the supports includes at least one opening and a plurality of electrodes disposed on two sides of the opening.
  • In the illumination device of the present invention, the LED structure is fixed on the transparent substrate, and the transparent substrate allows the light beam emitted by the LED structure passing through. Accordingly, the illumination device in the present invention can emit light in at least multi-directions or all directions. The luminous efficiency of the illumination device may be accordingly enhanced, and the light shape of the LED illumination device may also be improved.
  • These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a semiconductor light emitting element according to a preferred embodiment of the present invention.
  • FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between a light emitting diode structure and conductors according to a preferred embodiment of the present invention.
  • FIG. 6 and FIG. 7 are schematic diagrams illustrating a disposition of a wavelength conversion layer according to a preferred embodiment of the present invention.
  • FIG. 8 is a cross-sectional diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIG. 9 is a cross-sectional diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIG. 10 is a schematic diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIG. 11 is a schematic diagram illustrating a supporting base according to a preferred embodiment of the present invention.
  • FIG. 12 is a schematic diagram illustrating a circuit board according to a preferred embodiment of the present invention.
  • FIG. 13 is a schematic diagram illustrating a reflector according to a preferred embodiment of the present invention.
  • FIG. 14 is a schematic diagram illustrating a diamond-like carbon film according to a preferred embodiment of the present invention.
  • FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 16 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 17 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 18-20 are schematic diagrams illustrating a transparent substrate inserted or bonded to a supporting base according to a preferred embodiment of the present invention.
  • FIG. 21 and FIG. 22 are schematic diagrams illustrating a transparent substrate bonded to a supporting base with supports according to a preferred embodiment of the present invention.
  • FIG. 23 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 24 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention.
  • FIG. 25 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 26-29 are schematic diagrams illustrating transparent substrates point-symmetrically or line-symmetrically disposed on a supporting structure according to a preferred embodiment of the present invention.
  • FIG. 30 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 31 and FIG. 32 are schematic diagrams illustrating a lamp housing according to a preferred embodiment of the present invention.
  • FIG. 33 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 34 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 35 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 36 is a structural diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 37 is a structural diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention.
  • FIGS. 38-40 are schematic diagrams illustrating preferred optical units used in the embodiments shown in FIGS. 33-37 according to the present invention.
    •  DETAILED DESCRIPTION
  • Please refer to FIG. 1 and FIG. 2. FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a semiconductor light emitting element according to a preferred embodiment of the present invention. As shown in FIG. 1 and FIG. 2, a semiconductor light emitting element 1 includes a transparent substrate 2, a support surface 210, a first main surface 21A, a second main surface 21B and at least one light emitting diode (LED) structure 3 providing light in multi-directions. The transparent substrate 2, which is a sheet type substrate, has two main surfaces, and one of the surfaces is the support surface 210. The LED structure 3 capable of emitting light is disposed on the support surface 210. A light emitting surface 34 of the LED structure 3 uncovered by the transparent substrate 2 and at least a part of the support surface 210 without the LED structure form the first main surface 21A where light emitted from. The second main surface 21B is another main surface of the transparent substrate 2 without the LED structures 3. The disposition described above may also be reversed, or the LED structure 3 may be disposed on the two surfaces of the transparent substrate 2. In one embodiment, LED structures 3 may be disposed on the support surface 210 of the transparent substrate 2 interlacedly corresponding to other LED structures 3 disposed on the second main surface 21B, such that light beams emitted from LED structures 3 on one surface of the transparent substrate 2 would not be blocked by other LED structures 3 on another surface of the transparent substrate 2. The luminance of the semiconductor light emitting element 1 may be increased accordingly. A material of the transparent substrate 2, such as sapphire, ceramic, glass, plastic, rubber or etc., may comprise one selected from aluminum oxide (Al2O3), magnesium oxide, beryllium oxide, yttrium oxide, thorium dioxide, zirconium dioxide, lead zirconium titanate, gallium arsenide, zinc sulfide, zinc selenide, calcium fluoride, magnesium fluoride, silicon carbide (SiC) or polymer. Preferably, the transparent substrate may be a sapphire substrate in a preferred embodiment of the present invention. The structure of the sapphire substrate is substantially single crystal. The sapphire substrate has properties of higher light transmittance and better heat dissipation capability. The sapphire substrate may be used to increase the life time of the semiconductor light emitting element 1. However, the conventional sapphire substrate used for growing a conventional light emitting diode may be fragile when applied in the present invention. According to experiment results of the present invention, the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness thicker than or equal to 200 micrometers so as to perform better reliability, supporting performance and transparency. For effectively emitting light in multi-directions, including dual-directions or full directions, from the semiconductor light emitting element 1, the LED structure 3 in this invention preferably has a beam angle greater than 180 degrees. Accordingly, the LED structure 3 disposed on the transparent substrate 2 may emit light beams from the light emitting surface 34 toward a direction away from the transparent substrate 2, and the LED structure 3 may also emit light beams at least partially entering the transparent substrate 2. The light beams entering the transparent substrate 2 may emerge from the second main surface 21B opposite to the first main surface 21A, and the light beams entering the transparent substrate 2 may also be emitted from a part of the support surface 210 without LED structures 3 or emitted from other surface of the transparent substrate 2. The semiconductor light emitting element 1 may then be capable of emitting light in multi-directions including dual-directions or full directions. In this invention, an area of the first main surface 21A or an area of the second main surface 21B is larger than 5 times of a total area formed from at least one of the light emitting surfaces 34 of each LED structure, and this is a preferred proportion according to the consideration of both the luminous efficiency and the heat dissipation performance.
  • Additionally, in another preferred embodiment of the present invention, a difference in color temperatures of light beams emitted from the first main surface 21A and the second main surface 21B is smaller than or equal to 1500K so as to uniform light emitting effects of the semiconductor light emitting element 1. In addition, under the thickness condition of the transparent substrate 2 mentioned above, a light transmittance of the transparent substrate 3 is larger than or equal to 70% for light beams having a wavelength range larger than or equal to 420 nanometers, or light beams having a wavelength rage smaller than or equal to 470 nanometers.
  • The present invention is not limited to the embodiment described above. The following description will detail the different embodiments in the present invention. To simplify the description, similar components in each of the following embodiments are marked with identical symbols. For making it easier to understand the differences between the embodiments, the following description will detail the dissimilarities among different embodiments and the identical features will not be redundantly described.
  • Please refer to FIGS. 3-5. In the present invention, the LED structure 3 includes a first electrode 31A and a second electrode 31B for receiving electricity. The first electrode 31A and the second electrode 31B are respectively and electrically connected to a first connecting conductor 23A and a second connecting conductor 23B on the transparent substrate 2. FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between the light emitting diode structure 3 and the conductors. FIG. 3 illustrates a horizontal type LED structure, the LED structure 3 is formed on the support surface 210 of the transparent substrate 2, and the electrodes 31A and 31B are coupled to the connecting conductors 23A and 23B by wire bonding. FIG. 4 illustrates a flip chip type LED structure 3, and the LED structure 3 is disposed reversely and electrically coupled to the transparent substrate 2 by the first electrode 31A and the second electrode 31B. The first electrode 31A and the second electrode 31B may be directly coupled to the first connecting conductor 23A and the second connecting conductor 23B by welding or adhering. As shown in FIG. 5, the first electrode 31A and the second electrode 31B are disposed on different surfaces of the LED structure 3, and the LED structure 3 is vertically disposed so as to respectively connect the electrodes 31A and 31B to the connecting conductors 23A and 23B.
  • Please refer to FIG. 6 and FIG. 7. The semiconductor light emitting element 1 in the present invention may further include a wavelength conversion layer 4. The wavelength conversion layer 4 may be selectively disposed on the first main surface 21A or/and the second main surface 21B, or directly on the LED structures 3. The wavelength conversion layer 4 may directly contact the LED structures 3, or the wavelength conversion layer 4 may be separated from the LED structures 3 by a distance without directly contact. The wavelength conversion layer 4 contains at least one kind of fluorescent powders such as organic fluorescent powder or inorganic fluorescent powder of garnet series, sulfate series or silicate series. The wavelength conversion layer 4 may then be able to at least partially absorb a light beam emitted from the LED structure 3 and covert the light beam into another light beams having different wavelength range. For example, when blue light beams are emitted from the LED structure 3, a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4, and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the semiconductor light emitting element 1. Additionally, a luminance of the first main surface 21A is different from a luminance of the second main surface 21B because a light source of the first main surface 21A mainly comes from light beams directly emitted from the LED structure 3, and a light source of the second main surface 21B comes from light beams passing through the transparent substrate 2. Therefore, in a semiconductor light emitting element 1 of another preferred embodiment, concentrations of the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21A and the wavelength conversion layer 4 disposed on the second main surface 21B are arranged correspondingly. Preferably, a ratio of a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the first main surface 21A to a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21B may ranges from 1:0.5 to 1:3, or a ratio of the fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21B to the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21A may ranges from 1:0.5 to 1:3. The luminance and the lighting effect of the semiconductor light emitting element 1 may become more appropriate for different applications accordingly. A difference in color temperatures of light beams emitted from the first main surface 21A and the second main surface 21B may then be controlled to be smaller than or equal to 1500K. A wavelength converting efficiency and light emitting performance of the semiconductor light emitting element 1 may then be enhanced.
  • Please refer to FIG. 8. FIG. 8 is a cross-sectional diagram illustrating a semiconductor light emitting element 1 according to another preferred embodiment of the present invention. As shown in FIG. 8, the semiconductor light emitting element 1 in this embodiment includes a transparent substrate 2 and at least one LED structure 14 providing light in multi-directions. The transparent substrate 2 has a support surface 210 and a second main surface 21B disposed opposite to each other. The LED structure 14 is disposed on the support surface 210 of the transparent substrate 2. The LED structure 14 includes a first electrode 16 and a second electrode 18. The first electrode 16 and the second electrode 18 are configured to be electrically connected to other devices. A light emitting surface 34 of the LED structure 14 uncovered by the transparent substrate 2 and at least a part of the support surface 210 without the LED structure 14 form a first main surface 21A where light emitted from.
  • The LED structure 14 may include a substrate 141, an N-typed semiconductor layer 142, an active layer 143 and a P-typed semiconductor layer 144. In this embodiment, the substrate 141 of the LED structure 14 may be attached on the transparent substrate 2 by such as a chip bonding layer 28. Apart from being used to attach the LED structure 14, a light intensity may also be increased by optimizing the material property of the chip bonding layer 28. For example, a refractive index of the chip bonding layer 28 is preferably between a refractive index of the substrate 141 and a refractive index of the transparent substrate 2 so as to increase the intensity of light emitted from the LED structure 14. In addition, the chip bonding layer 28 may be a transparent adhesive or other appropriate bonding material. The first electrode 16 and the second electrode 18 are disposed on the side of the LED structure 14 opposite to the chip bonding layer 28. The first electrode 16 and the second electrode 18 are electrically connected to the P-typed semiconductor layer 144 and the N-typed semiconductor layer 142 respectively (FIG. 8 does not show the connecting relation between the second electrode 18 and the N-typed semiconductor layer 142). Horizontal level of an upper surface of the first electrode 16 and an upper surface of the second electrode 18 are substantially the same. The first electrode 16 and the second electrode 18 may be metal electrodes, but not limited thereto. In addition, the semiconductor light emitting element 1 further includes a first connecting conductor 20, a second connecting conductor 22 and a wavelength conversion layer 4. The first connecting conductor 20 and the second connecting conductor 22 are disposed on the transparent substrate 2. The first connecting conductor 20 and the second connecting conductor 22 may be metal wires or other conductive patterns, but not limited thereto. The first electrode 16 and the second electrode 18 are respectively connected to the first connecting conductor 20 and the second connecting conductor 22 electrically by wire bonding or welding, but not limited thereto. The wavelength conversion layer 4 is disposed on the transparent substrate 2, and the wavelength conversion layer 4 may cover the LED structure 14. Additionally, the wavelength conversion layer 4 may further cover the second main surface 21B of the transparent substrate 2.
  • In addition, a non-planar structure 12M may be selectively disposed on the surfaces of the transparent substrate 2 for increasing the intensity of light emitted from the transparent substrate 2 and unifying the distribution of the emitted light. The non-planar structure 12M may be a convex geometric structure or a concave geometric structure, such as a pyramid, a cone, a hemispheroid, a triangular prism and so forth. The non-planar structures 12M may be arranged regularly or randomly. Furthermore, a diamond-like carbon (DLC) film 25 may be selectively disposed on the surfaces of the transparent substrate 2 so as to enhance the thermal conductive ability and the heat dissipating performance.
  • Please refer to FIG. 9. FIG. 9 is a cross-sectional diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention. Compared with the embodiment shown in FIG. 8, in the semiconductor light emitting element 1 of this embodiment, the first electrode 16, the second electrode 18 and a first chip bonding layer 28A are disposed on the same surface of the LED structure 14. That the first electrode 16 and the second electrode 18 are electrically connected to the first connecting conductor 20 and the second connecting conductor 22 by flip chip. Wherein the first connecting conductor 20 and the second connecting conductor 22 may respectively extend corresponding to the positions of the first electrode 16 and 18. And the first electrode 16 and the second electrode 18 may be respectively connected to the first connecting conductor 20 and the second connecting conductor 22 electrically through a second chip bonding layer 28B. The second chip bonding layer 28B may be a conductive bump such as a gold bump or a solder bump, a conductive glue such as a silver glue, or an eutectic layer such as an Au—Sn alloy eutectic layer or an In—Bi—Sn alloy eutectic layer, but not limited to this. By employing the second chip bonding layer 28B, the first chip bonding layer 28A under the LED structure 14 may not be required or may be replaced by the wavelength conversion layer 4.
  • Please refer to FIG. 10. FIG. 10 is a schematic diagram illustrating a semiconductor light emitting element according to another preferred embodiment of the present invention. As shown in FIG. 10, a semiconductor light emitting element 310 in this invention includes the transparent substrate 2, at least one LED structure 3, a first connecting electrode 311A, a second connecting electrode 311B and at least one wavelength conversion layer 4. The LED structure 3 is disposed on the support surface 210 of the transparent substrate 2 and forms a first main surface 21A where light emitted from. In this embodiment, the LED structure 3 has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure 3 penetrate into the transparent substrate 2. At least a part of the penetrating light beams may be emitted from a second main surface 21B which is opposite to the first main surface 21A, and the other penetrating light beams may be emitted from other surfaces of the transparent substrate 2, so as to form the semiconductor light emitting element 310 providing light in multi-directions. The first connecting electrode 311A and the second connecting electrode 311B are respectively disposed on different sides of the transparent substrate 2 or on the same side of the transparent substrate 2 (not shown in FIG. 10). The first connecting electrode 311A and the second connecting electrode 311B may be electrodes of the semiconductor light emitting element 310 respectively formed by extension parts of a first connecting conductor and a second connecting conductor on the transparent substrate 2, and the first connecting electrode 311A and the second connecting electrode 311B are electrically connected to the LED structure 3 accordingly. The wavelength conversion layer 4 at least covers the LED structure 3 and exposes at least a part of the first connecting electrode 311A and the second connecting electrode 311B. The wavelength conversion layer 4 at least partially absorbs a light beam emitted from the LED structure 3 or/and the transparent substrate 2, and coverts the light beam into alight beam having another wavelength range. The converted light and the light which are not absorbed by the wavelength conversion layer 4 are mixed to extend the total wavelength range of the light beams emitted from the semiconductor light emitting element 310 and improve the light emitting performance of the semiconductor light emitting element 310. Because the semiconductor light emitting element 310 in this embodiment includes the first connecting electrode 311A and the second connecting electrode 311B respectively disposed on the transparent substrate 2, traditional LED packaging process may be omitted and the semiconductor light emitting element 310 may be independently manufactured and then combined with an appropriate supporting base. Accordingly, the total manufacturing yield may be improved, the structure may be simplified and applications of the corresponding supporting base may also be increased.
  • Please refer to FIG. 11. An illumination device 11 is provided in this embodiment. The illumination device 11 includes a supporting base 5 and the semiconductor light emitting element described above. The transparent substrate 2 of the semiconductor light emitting element may stand on (or lie on) and be electrically coupled to the supporting base 5. A first angle θ1 exists between the transparent substrate 2 and the supporting base 5. The first angle θ1 may be fixed or be adjusted according to the light shape requirement of the illumination device. Preferably, the first angle θ1 ranges from 30 degrees to 150 degrees.
  • Please refer to FIG. 12. The supporting base 5 of the illumination device 11 in the present invention may further include a circuit board 6 electrically coupled to a power supply. The circuit board 6 is electrically coupled to a first connecting conductor and a second connecting conductor (not shown in FIG. 12) so as to be electrically connected to the LED structure 3. The power supply may then provide electricity to the LED ship 3 for emitting light via the circuit board 6. In other preferred embodiment of the present invention, the LED structure 3 may also be electrically connected to the supporting base directly via the first connecting conductor and the second connecting conductor (not shown in FIG. 12) without the circuit board 6, and the power supply may provide electricity to the LED ship 3 via the supporting base 5.
  • Please refer to FIG. 13. The illumination device 11 of the present invention may further include a reflector or filter 8 disposed on the second main surface 21B or the support surface 210. The reflector or filter 8 may be used to reflect at least a part of light beams emitted from the LED structure 3 and passing through the transparent substrate 2. At least a part of the reflected light beams may be changed to be emitted from the first main surface 21A. The reflector 8 may include at least one metal layer or a Bragg reflector, but not limited thereto. The Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes disposed in a stack configuration, or the Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes and a plurality of metal oxide layers disposed in a stack configuration.
  • Please refer to FIG. 14. The illumination device 11 of the present invention may further include a diamond-like carbon (DLC) film 9 disposed on the support surface 210 or/and the second main surface 21B of the transparent substrate 2 so as to enhance the thermal conductive ability and the heat dissipating performance.
  • Please refer to FIG. 15. FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 15, an illumination device 10 in this embodiment includes a supporting base 26 and the semiconductor light emitting element described in the present invention. The semiconductor light emitting element includes a transparent substrate 2 and at least one LED structure 14. The semiconductor light emitting element may be at least partially embedded into the supporting base 26. An electrode 30 and an electrode 32 of the supporting base 26 are electrically connected to the connecting conductors of the semiconductor light emitting element. Driving voltage V+ and V− may be accordingly provided through the electrodes 30 and 32 respectively to the LED structure 14 for emitting the light beam L. The LED structure 14 includes a first electrode 16 and a second electrode 18 respectively and electrically connected to the first connecting conductor 20 and the second connecting conductor 22 by wire bonding, but not limited thereto. Additionally, the LED structure 14 has a beam angle greater than 180 degrees or has a plurality of light emitting surfaces, and then the illumination device 10 may emit light beams from the first main surface 21A and the second main surface 21B. Furthermore, because some of the light beams may be emitted directly from the LED structure 14 and/or the other four side surfaces of the transparent substrate 2, the illumination device 10 may accordingly emit light from multi sides or six sides or in full directions.
  • The semiconductor light emitting element may further include a wavelength conversion layer 4 selectively disposed on the LED structure 14, the first main surface 21A or the second main surface 21B. The wavelength conversion layer 4 may at least partially absorb a light beam emitted from the LED structure 14 and covert the light beam into another light beam having different wavelength range so as to emit light with specific color or light having a wider wavelength range from the illumination device 10. For example, when blue light beams are emitted from the LED structure 14, a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4, and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the illumination device 10. Additionally, the transparent substrate 2 may be directly or indirectly fixed on the supporting base 26 in a parallel state or a non-parallel state. For instance, the transparent substrate 2 may be vertically fixed on the supporting base 26 by mounting a side wall of the transparent substrate 2 with the supporting base 26 directly, or the transparent substrate 2 may be horizontally disposed on the supporting base 26, but not limited thereto. The transparent substrate 2 preferably includes materials with high thermal conductivity, and heat generated from the LED structure 14 may be accordingly dissipated to the supporting base 26 through the transparent substrate 2, such that the high power LED structures can be applied in the illumination device of the present invention accordingly. However, in a preferred embodiment of the present invention, at the same power consumption of the illumination device, more LED structures with relatively low power are dispersed on the transparent substrate 2 so as to fully utilize the thermal conductivity capability of the transparent substrate 2. For example, a power of the LED structure in this embodiment may be equal to or lower than 0.2 watt, but not limited thereto.
  • Please refer to FIG. 16. FIG. 16 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. Compared with the illumination shown in FIG. 15, an illumination device 10′ in this embodiment includes a plurality of LED structures 14, and at least some of the LED structures 14 are electrically connected to each other in series. Each of the LED structures 14 includes the first electrode 16 and the second electrode 18. The first electrode 16 of one LED structure 14 disposed on one end of the series is electrically connected to the first connecting conductor 20, and the second electrode 18 of another LED structure 14 disposed on another end of the series is electrically connected to the second connecting conductor 22, but not limited thereto. The LED structures 14 may be electrically connected in series or in parallel. The LED structures 14 may be LED structures emitting identical color, such as blue LED structures, or LED structures emitting different colors may also be applied and combined according to different demands. The illumination device 10′ may emit light in much more different colors by further employing the wavelength conversion layer 4 according to the present invention.
  • Please refer to FIG. 17. FIG. 17 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. Compared with the illumination devices shown in FIG. 15 and FIG. 16, an illumination device 50 in this embodiment further includes a support 51 configured to connect the semiconductor light emitting element and the supporting base 26. The transparent substrate 2 of the semiconductor light emitting element is fixed on a side of the support 51 by a unit bonding layer 52, and another side of the support 51 may be disposed on or inserted into the supporting base 26. Additionally, the support 51 is flexible so as to form an angle between the transparent substrate 2 and the supporting base 26, and the angle ranges from 30 degrees to 150 degrees. A material of the support 51 may include one selected from aluminum, composite metallic material, copper conductor, electric wire, ceramic substrate, printed circuit board, or other appropriate materials.
  • Please refer to FIGS. 18-20. When the transparent substrate 2 in the present invention is disposed on a supporting base 5, the transparent substrate 2 may be inserted or bonded to the supporting base 5.
  • As shown in FIG. 18. When the transparent substrate 2 is disposed on the supporting base 5, the transparent substrate 2 is inserted in to a single socket 61 of the supporting base 5, and the semiconductor light emitting element may be electrically coupled to the single socket 61 via connecting conductors. The LED structures (not shown in FIG. 18) on the transparent substrate 2 have to be electrically coupled to a power supply from or through the supporting base 5, and at least part of the conductive pattern or the connecting conductors are extended to an edge of the transparent substrate 2 and integrated in to an connecting finger having a plurality of conductive contact sheets or an electrically connecting port such as the connecting electrodes 311A and 311B described above (not shown in FIG. 18). When the transparent substrate 2 is inserted into the socket 61, the LED structure (not shown in FIG. 18) may then receive electricity from or through the supporting base 5, and the transparent substrate 2 may be fixed by the socket 61 of the supporting base 5 accordingly.
  • Please refer to FIG. 19. FIG. 19 is a schematic diagram illustrating the transparent substrate 2 inserted into a multi sockets of the supporting base 5. In this embodiment, the transparent substrate 2 has a dual-pin structure. One of the pins may be configured as a positive electrode of the device, and another one of the pins may be configured as a negative electrode of the device. Both of the pins have at least one conductive contact sheet respectively so as to act as connecting ports. Accordingly, there are at least two sockets 61 having corresponding shape and size with the pins so as to smoothly insert the transparent substrate 2 into the supporting base 5 and provide electricity to the LED structure.
  • Please refer to FIG. 20. The transparent substrate 2 is bonded to the supporting base 5 by the device bonding layer. In the bonding process, metal materials such as gold, tin, indium, bismuth or silver may be used in combining or welding the transparent substrate 2 and the supporting base 5. Additionally, conductive silica gel or epoxy material may also be used in fixing the transparent substrate 2 on the supporting base 5. The conductive pattern and the connecting conductors of the semiconductor light emitting element may be electrically connected to the supporting base via the device bonding layer accordingly.
  • Please refer to FIG. 21 and FIG. 22. The supporting base 5 of the illumination device 11 described in the present invention may be a substrate comprising one selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board. There is at least one support 62 on a surface or edge of the supporting base 5. The support 62 may be separated from the supporting base 5, or the support 62 and the supporting base 5 are monolithically integrated. The semiconductor light emitting element may be electrically coupled to the support 62 by bonding, and a device bonding layer 63 is used to fix the transparent substrate 2 on the supporting base 5. The first angle θ1 is maintained between the transparent substrate 2 and a surface of the supporting base 5 without supports. The semiconductor light emitting elements may also be disposed on the surface of the supporting base 5 without supports so as to enhance the light emitting performance of the illumination device 11. Additionally, the semiconductor light emitting element may also be inserted and connected to the support 62 (not shown in FIG. 21 and FIG. 22), wherein a connector may be used to connect the semiconductor light emitting element and the support (and/or the support and the supporting base) so as to fix the transparent substrate 2 on the supporting base 5. Because the supporting base 5 and the support 62 are flexible, it is more convenient to apply the present invention to different applications. Moreover, the color variety of the illumination device 11 may be enhanced for different demands by combining using the semiconductor light emitting elements having different light color.
  • Please refer to FIG. 23. As shown in FIG. 23, an illumination device in this embodiment includes at least one semiconductor light emitting element 1 and a supporting base 5. The supporting base 5 includes at least one support 62 and at least one circuit pattern P. An end of the transparent substrate of the semiconductor light emitting element 1 is electrically coupled to the support 62 so as to avoid or reduce the shielding influence caused by the support 62 for light emitting from the semiconductor light emitting element 1. The supporting base 5 may be selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board. The support 62 may be formed by cutting and bending a part of the supporting base 5 to form an angle (as the first angle θ1 shown in FIG. 21 and FIG. 22). The circuit pattern P is disposed on supporting base 5, and the circuit pattern P has at least one set of electrical port to be electrically connected to a power supply. Another part of the circuit pattern P extends on the support 62 so as to be electrically connected to the semiconductor light emitting element 1, and the semiconductor light emitting element 1 may than be electrically connected to the power supply via the circuit pattern P of the supporting base 5. In addition, the supporting base 5 may further include at least one hole H or at least one gap G, and fixing devices such as screws, nails or bolts may be used to combine the supporting base 5 with other device via the hole H or the gap G according to the application conditions of the illumination device. Meanwhile, the hole H or the gap G may also be used to increase the heat radiating area and enhance the heat dissipation capability of the illumination device.
  • Please refer to FIG. 24. FIG. 24 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 24, a device frame 322 in this embodiment includes a supporting base 5 and at least one support 62. Compared with the embodiment shown in FIG. 23, the support 62 in this embodiment includes at least one stripe part 342 and an opening 330. The electrode 30 and the electrode 32 are respectively disposed on two sides of the opening 330. The stripe part 342 forms at least one wall of the opening 330. One semiconductor light emitting element described in the present invention is disposed correspondingly to the opening 330 and electrically coupled to the support 62. The connecting conductors of the semiconductor light emitting element is electrically connected to the electrode 30 and the electrode 32 so as to drive the semiconductor light emitting element by a power supply via the support 62 and the circuit pattern on the supporting base 5. A size of the opening 330 may not be smaller than a main light emitting surface of the semiconductor light emitting element so as to prevent light beams emitted from the semiconductor light emitting element from being blocked by the support 62. A connection part between the support 62 and the supporting base 5 may be adjustable so as to adjust the angle between the support 62 and the supporting base 5 as required.
  • Please refer to FIG. 24 and FIG. 25. FIG. 25 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. Compared with the embodiment shown in FIG. 24, an illumination device 302 shown in FIG. 25 further includes at least one support 62 having a plurality of openings 330. The openings 330 are respectively disposed on two opposite sides of the support 62, and the stripe part 342 forms at least one wall of each opening 330. The semiconductor light emitting element 310 are disposed correspondingly to the openings 330, and the conductive pattern or the connecting electrodes (not shown in FIG. 25) of each semiconductor light emitting element 310 are respectively disposed correspondingly and electrically connected to the electrode 30 and 32. The illumination device 302 in this embodiment may further include a plurality of the supports 62. The support 62 is disposed between the semiconductor light emitting element 1 and the supporting base 5. A length of the support 62 may substantially range from 5.8 to 20 um. Angles between the supporting base 5 and the supports 62 with the semiconductor light emitting element disposed on may be modified respectively. In other words, an angle between the supporting base 5 and at least one of the supports 62 may be different from an angle between the supporting base 5 and another one of the supports 62 so as to perform required light emitting effects, but not limited thereto. Additionally, semiconductor light emitting elements emitting light having different wavelength ranges may be disposed on an identical support or on different supports so as to enrich the color effect of the illumination device.
  • For enhancing the luminance and improving the light emitting effect, in an illumination device of another preferred embodiment of the present invention, a plurality of the semiconductor light emitting elements comprising the transparent substrates are disposed on the supporting bases detailed above or on other supporting structures. A point-symmetric distribution or a line-symmetric distribution may be applied. The semiconductor light emitting elements comprising the transparent substrates may be point-symmetrically disposed on the supporting structure or line-symmetrically disposed on the supporting structure. Please refer to FIGS. 26-29. In the illumination devices of the embodiments shown in FIGS. 26-29, the semiconductor light emitting elements are disposed on the supporting structures having different shapes. The light beams emitted from the illumination devices 11 may be uniform because of the point-symmetric distribution or the line-symmetric distribution (the LED structures are not shown in FIGS. 26-29). The light emitting effects of the illumination devices 11 may be further improved by adjusting the first angle described above. As shown in FIG. 26, the semiconductor light emitting elements are point-symmetrically arranged and form an angle between each other in 90 degrees. Therefore, at least two of the semiconductor light emitting elements may face any one of the four sides of the illumination device 11. As shown in FIG. 27, the angle between the semiconductor light emitting elements is smaller than 90 degrees. As shown in FIG. 29, the angle between the semiconductor light emitting elements is larger than 90 degrees. In another preferred embodiment of the present invention (not shown), the semiconductor light emitting elements may be asymmetrically disposed and at least apart of the semiconductor light emitting elements may be disposed in a crowd or separately disposed so as to perform required light shape according to different applications of the illumination device.
  • Please refer to FIG. 30. FIG. 30 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 30, an illumination device 301 includes a semiconductor light emitting element 310 and a support 321. The support 321 includes an opening 330, and the semiconductor light emitting element 310 is disposed correspondingly to the opening 330. In this embodiment, an external part of the support 321 may be work as a pin or be bent to form a connecting pad required in surface mounting so as to be fixed and electrically connected to other electrical circuit units. A light emitting surface of the semiconductor light emitting element 310 is disposed in the opening 330, and the illumination device 301 may still emit light from multi sides or six sides accordingly whether the support 321 is transparent or not.
  • Please refer to FIG. 31. An illumination device is provided in this embodiment of the present invention. The illumination device includes a lamp housing 7 having a tube shape, at least one semiconductor light emitting element 1 and a supporting structure 60. The semiconductor light emitting element 1 is disposed on the supporting structure 60, and at least a part of the semiconductor light emitting element 1 is disposed in space formed by the lamp housing 7. Please refer to FIG. 32. When more semiconductor light emitting elements 1 are disposed in the lamp housing 7, the first main surfaces 21A of the semiconductor light emitting elements 1 are arranged separately and not parallel to one another. Additionally, the semiconductor light emitting elements 1 are at least partially disposed in space formed by the lamp housing 7, and the semiconductor light emitting elements 1 are not closely adjacent to an inner wall of the lamp housing 7. Preferably, a distance D between the semiconductor light emitting element 1 and the lamp housing 7 may be equal to or larger than 500 micrometers. However, the lamp housing 7 may also be formed by filling glue, and the lamp housing 7 may at least partially cover and directly contact the semiconductor light emitting element 1.
  • FIGS. 33-37 are structural diagrams illustrating an illumination device 10 for providing a dazzling light according to different embodiments of the present invention. As shown in FIG. 33, the illumination device 10 may comprise a support 62, a semiconductor light emitting element 1 disposed on the support 62, and an optical unit 70 disposed on the semiconductor light emitting element 1. The semiconductor light emitting element 1 may comprise the same structure and provide light in multi-directions as disclosed in above embodiments according to the present invention. The semiconductor light emitting element 1 may be shaped like a card, a stick, a popsicle, a cube, or a candle. The optical unit 70 may include a covering side 72 and a light dispersion side 74. The covering side 72 and the light dispersion side 74 are opposite and correspond to each other. The covering side 72 faces the semiconductor light emitting element 1 as the optical unit 70 is disposed on the semiconductor light emitting element 1. The optical unit 70 further includes at least one optical structure 76 disposed on the light dispersion side 74, and a surface of the light dispersion side 74, without the optical structure 76 disposed thereon, may be formed as a flat surface. The optical structure 76 may be shaped like a pyramid or a part of a diamond. An amount of the optical structure 76 can be one or more, which depends on design demand. When the amount of the optical structure 76 is more than one, the optical structures 76 are disposed in an array arrangement, an interlaced arrangement or a concentric arrangement, which are respectively shown in FIGS. 38-40. The optical structure 76 is adapted to disperse the light received from the covering side 72 to different directions. Refraction angle of the light, which passes through the optical structure 76, is varied and corresponds to wavelength of the light and refractive index difference between the optical structure 76 and environmental medium (such as air). More specific to this embodiment, the semiconductor light emitting element 1 includes a transparent substrate 2 having a support surface 210 and a second main surface 21B disposed opposite to each other, and a light emitting diode (LED) structure 14 disposed on the support surface 210 of the transparent substrate 2. A first main surface 21A, where light emitted from, is formed by the LED structure 14 and at least a part of the support surface without the LED structure 14, and at least a part of the light emitted from the LED structure 14 may pass through the transparent substrate 2 and emerge from the second main surface 21B. An amount of the LED structure 14 may be one or more. The optical unit 70 is disposed on the first main surface 21A of the semiconductor light emitting element 1, and a wavelength conversion layer 4 is sandwiched by the optical unit 70 and the transparent substrate 2. A surface of the covering side 72 is substantially parallel to a corresponding surface of the wavelength conversion layer 4.
  • In addition, as shown in FIG. 33, the optical unit 70 may further include a first dispersion portion 78, a second dispersion portion 80 and a connection portion 82. The connection portion 82 is connected between the first dispersion portion 78 and the second dispersion portion 80, so that a section view of the optical unit 70 can be a U-shaped form. As the optical unit 70 is assembled with the semiconductor light emitting element 1, the first dispersion portion 78 and the second dispersion portion 80 respectively cover the first main surface 21A and the second main surface 21B of the transparent substrate 2. An inner surface 821 of the connection portion 82 faces a side surface 2 a of the transparent substrate 2, and a recess 84 can be formed on the surface 821. A section view of the recess 84 of the connection portion 82 includes a recess angle θ2, which may be ranged from 70 to 140 degrees. The recess angle θ2 may be preferably equal or close to 90 degrees. In the embodiment, an outer surface 823 of the connection portion 82, which extends from the light dispersion side 74, is flat. The light can emerge from the surface 823 of the connection portion 82 and the light dispersion sides 74 of the dispersion portions 78, 80.
  • In contrast to the embodiment shown in FIG. 33, an optical unit 70 of an illumination device 10, shown in FIG. 34 according to another embodiment of the present invention, may further selectively include at least one optical structure 76 disposed on an outer surface 823 of a connection portion 82, which means the optical structures 76 may be disposed on a connection portion 82 and dispersion portions 78, 80 of the optical unit 70. Such that the light of the illumination device 10 can further be dispersed via the surface 823 and the light dispersion side 74 of the optical unit 70. According to another embodiment of the present invention, as shown in FIG. 35, a connection portion 82 of an optical unit 70 may include a convex portion 86. The convex portion 86 may comprise a curvature radius ranged from 0.01 to 10 mm, and a preferably value of the curvature radius of the convex portion 86 may be equal or close to 3 mm. The convex portion 86 can be adapted to disperse the light emitted from a semiconductor light emitting element 1 (or an LED structure 14) through an upper end of the optical unit 70.
  • As shown in FIGS. 33-35, a sectional view of the optical structure 73 disposed on the first dispersion portion 78 or the second dispersion portion 80 may be shaped like a triangle, and the triangle includes a tip angle θ3 which may range from 30 to 140 degrees. Further, the optical structure 73 disposed on the surface 823 of the connection portion 82 may be also shaped like a triangle, and the triangle includes a tip angle θ3 which may range from 50 to 140 degrees. The tip angles θ3 of the optical structures 73 disposed on first dispersion portion 78, the second dispersion portion 80 and/or the connection portion 82 may be preferably equal or close to 70 degrees.
  • According to some embodiments of the present invention, at least a part of the optical unit 70 may directly contact the wavelength conversion layer 4. However, according to other embodiments of the present invention, a distance D1 between the covering side 72 of the optical unit 70 and the wavelength conversion layer 4 may exist and be ranged from 0 to 2 mm. The distance D1 between the covering side 72 and the wavelength conversion layer 4 is preferably equal or close to 0.2 mm. Similarly, a distance D2 between the connection portion 82 of the optical unit 70 and the side surface 2 a of the transparent substrate 2 may exist and be ranged from 0 to 2 mm. The distance D2 between the connection portion 82 and the side surface 2 a is preferably equal or close to 0.2 mm. Furthermore, a distance D3 between the covering side 72 of the optical unit 70 and the LED structure 14 may exist and be ranged from 0 to 2 mm. The distance D3 is similar to the distance D1 because the wavelength conversion layer 4 may be laid on the LED structure 14.
  • Please refer to FIG. 36. FIG. 36 is a schematic diagram illustrating an illumination device 11 according to another preferred embodiment of the present invention. In contrast to the embodiment of the present invention shown in FIG. 23, the illumination device 11 may further include an optical unit 70 disposed on a semiconductor light emitting element 1, and a crystal member 88 which covers the optical unit 70 and the semiconductor light emitting element 1. More specific to this embodiment, the illumination device 11 may comprise a supporting base 5, three supports 62 coupled with the supporting base, three semiconductor light emitting elements 1 respectively disposed on the supports 62, and the crystal member 88 covering the semiconductor light emitting elements 1. The supports 62 with the semiconductor light emitting elements 1 may be symmetrically disposed on the supporting base 5. Each of the semiconductor light emitting elements 1 may comprise at least two light emitting surfaces opposite to each other, and optical units 70 having a plurality of optical structures 76 may be disposed on the both surfaces of the semiconductor light emitting elements 1, and therefore the semiconductor light emitting element 1 may be sandwiched by the optical units 76. The optical unit 70 may be a sheet type element, as shown in FIGS. 38-40, and bonded to the semiconductor light emitting element 1. The crystal member 88 may have a space and the semiconductor light emitting elements 1 with the optical units 70 are disposed in the space. A distance between each of the semiconductor light emitting elements 1 and the crystal member 88 may range from 0 to 20 cm. The light emitted from the semiconductor light emitting element 1 can be dispersed by the optical structures 76 of the optical unit 70, and be refracted by the crystal member 88, so that the illumination device 11 according to the present invention can provide bifurcation brilliance and be used for chandelier application.
  • Please refer to FIG. 37. FIG. 37 is an exploded diagram illustrating a semiconductor light emitting element 1′ according to another preferred embodiment of the present invention. The semiconductor light emitting element 1′ may include a cube-shaped light emitting unit 90 and an optical unit 70. The cube-shaped light emitting unit 90 may include at least two light emitting surfaces 92 opposite to each other. The optical unit 70 is disposed on at least one of the light emitting surfaces 92 of the cube-shaped light emitting unit 90. When the optical unit 70 is assembled with the cube-shaped light emitting unit 90, a first dispersion portion 78 and a second dispersion portion 80 of the optical unit 70 respectively cover the opposite light emitting surfaces 92, and a covering side 72 of the optical unit 70 faces the cube-shaped light emitting unit 90. A plurality of optical structures 76 are disposed on the light dispersion side 74 of the optical unit 70, which is opposite to the covering side 72, and is utilized to disperse the light received from the covering side 72 to different directions corresponding to the wavelength of the light and the refractive index difference between the optical structure 76 and the environmental medium.
  • A medium within the distance D1, D2, D3 between the optical unit 70 and the light emitting unit 90 can be glue, air or a vacuum. The optical unit 70 is made of light guiding material, and is adapted to guide the light emitted from the light emitting unit 90 to be out of the first dispersion portion 78, the second dispersion portion 80 and the connection portion 82 via the optical structures 76 disposed on the light dispersion sides 74 and the surface 823. Therefore, the optical unit 70 has light guiding function and light dispersing function to show magnificently brilliant performance. The optical structure 76 can be a polygon taper, such as the trigonal pyramid, the quadrangular pyramid and so on. The light passing through the optical unit 70 is dispersed by the optical structure 76, so that the semiconductor light emitting element 1 may emit the light with non-directional property and can be used for providing bifurcation and gorgeous brilliance.
  • In above embodiments according to the present invention, elements having the same numerals as ones of the above-mentioned embodiment may have the same structures and functions, and the detailed description is omitted herein for simplicity.
  • Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims (27)

What is claimed is:
1. A semiconductor light emitting element, comprising:
a transparent substrate, having a support surface and a second main surface disposed opposite to each other;
a light emitting diode (LED) structure disposed on the support surface, a first main surface, where light emitted from, being formed by the LED structure and at least a part of the support surface without the LED structure, and at least a part of the light emitted from the LED structure may pass through the transparent substrate and emerge from the second main surface; and
an optical unit disposed on the first main surface, the optical unit comprising a covering side facing the transparent substrate, and a light dispersion side corresponding to the covering surface;
wherein the optical unit further comprises at least one optical structure disposed on the light dispersion side to disperse light received from the covering side to different directions corresponding to wavelength of the light.
2. The semiconductor light emitting element of claim 1, further comprising:
a wavelength conversion layer sandwiched by the optical unit and the transparent substrate, wherein a surface of the covering side of the optical unit is parallel to a corresponding surface of the wavelength conversion layer.
3. The semiconductor light emitting element of claim 1, wherein the optical unit further comprises a first dispersion portion and a second dispersion portion, and the first dispersion portion and the second dispersion portion cover the first main surface and the second main surface of the transparent substrate respectively.
4. The semiconductor light emitting element of claim 3, wherein the optical unit further comprises a connection portion connected between the first dispersion portion and the second dispersion portion.
5. The semiconductor light emitting element of claim 4, wherein a surface of the connection portion facing a side surface of the transparent substrate comprises a recess.
6. The semiconductor light emitting element of claim 5, wherein a section view of the recess of the connection portion comprises a recess angle ranged from 70 to 140 degrees.
7. The semiconductor light emitting element of claim 6, wherein the recess angle may be equal or close to 90 degrees.
8. The semiconductor light emitting element of claim 4, wherein the connection portion of the optical unit comprises at least one optical structure disposed on a surface extending from a light dispersion side of the first dispersion portion or the second dispersion portion.
9. The semiconductor light emitting element of claim 1, wherein a section view of the optical structure is shaped like a triangle and comprises a tip angle ranged from 30 to 140 degrees.
10. The semiconductor light emitting element of claim 8, wherein a section view of the optical structure is shaped like triangle and comprises a tip angle ranged from 50 to 140 degrees.
11. The semiconductor light emitting element of claim 10, wherein the tip angle may be equal or close to 70 degrees.
12. The semiconductor light emitting element of claim 1, wherein an amount of the optical structure is more than 1 and the optical structures are disposed in an array arrangement, an interlaced arrangement or a concentric arrangement.
13. The semiconductor light emitting element of claim 5, wherein the connection portion comprises a convex portion.
14. The semiconductor light emitting element of claim 13, wherein a curvature radius of the convex portion may be ranged from 0.01 to 10 mm.
15. The semiconductor light emitting element of claim 14, wherein the curvature radius of the convex portion may be equal or close to 3 mm.
16. The semiconductor light emitting element of claim 2, wherein at least part of the optical unit directly contacts the wavelength conversion layer.
17. The semiconductor light emitting element of claim 2, wherein a distance between the covering side of the optical unit and the wavelength conversion layer is ranged from 0 to 2 mm.
18. The semiconductor light emitting element of claim 17, wherein the distance between the covering side of the optical unit and the wavelength conversion layer is equal or close to 0.2 mm.
19. The semiconductor light emitting element of claim 4, wherein a distance between the connection portion of the optical unit and the side surface of the transparent substrate is ranged from 0 to 2 mm.
20. The semiconductor light emitting element of claim 19, wherein the distance between the connection portion of the optical unit and the side surface of the transparent substrate is equal or close to 0.2 mm.
21. The semiconductor light emitting element of claim 1, wherein at least part of the optical unit directly contacts the LED structure.
22. The semiconductor light emitting element of claim 1, wherein a distance between the covering side of the optical unit and the LED structure is ranged from 0 to 2 mm.
23. The semiconductor light emitting element of claim 1, wherein the optical structure is shaped like a pyramid.
24. An illumination device, comprising:
a semiconductor light emitting element of claim 1; and
a crystal member, disposed near the semiconductor light emitting element and received light emitted from the semiconductor light emitting element.
25. An illumination device of claim 24, wherein a distance between the semiconductor light emitting element and the crystal member is ranged from 0 to 20 cm.
26. A semiconductor light emitting element, comprising:
a cube-shaped light emitting unit; and
an optical unit disposed on at least one of light emitting surfaces of the cube-shaped light emitting unit, the optical unit comprising a covering side facing the cube-shaped light emitting unit, and a light dispersion side corresponding to the covering surface;
wherein the optical unit further comprises at least one optical structure disposed on the light dispersion side to disperse light received from the covering side to different directions corresponding to wavelength of the light.
27. The semiconductor light emitting element of claim 26, wherein the cube-shaped light emitting unit comprises at least two light emitting surfaces opposite to each other, the optical unit further comprises a first dispersion portion and a second dispersion portion, and the first dispersion portion and the second dispersion portion cover the light emitting surfaces of cube-shaped light emitting unit respectively.
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TW104107764A TWI550898B (en) 2014-03-18 2015-03-11 Semiconductor light emitting element and illumination device comprising the same
CN201510114780.7A CN104934521B (en) 2014-03-18 2015-03-16 Semiconductor light-emitting elements and its light-emitting device
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US13/903,998 US20130320363A1 (en) 2012-05-29 2013-05-28 Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device
US13/904,038 US9123868B2 (en) 2012-05-29 2013-05-29 Light emitting element and illumination device thereof
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