JPH10117018A - Chip-type light-emitting diode - Google Patents
Chip-type light-emitting diodeInfo
- Publication number
- JPH10117018A JPH10117018A JP8269806A JP26980696A JPH10117018A JP H10117018 A JPH10117018 A JP H10117018A JP 8269806 A JP8269806 A JP 8269806A JP 26980696 A JP26980696 A JP 26980696A JP H10117018 A JPH10117018 A JP H10117018A
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light
- light emitting
- diode element
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 25
- 238000009413 insulation Methods 0.000 abstract 5
- 238000007789 sealing Methods 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、携帯電話やポケッ
トベルなど小型の電子機器に搭載される薄型のチップ型
発光ダイオードに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin chip type light emitting diode mounted on a small electronic device such as a portable telephone or a pager.
【０００２】[0002]
【従来の技術】従来、この種のチップ型発光ダイオード
としては、例えば図４に示すように、ガラスエポキシ樹
脂基板等からなる絶縁基板１と、絶縁基板１の表面にエ
ッチング等により形成された一対のパターン電極（カソ
ード電極）２，（アノード電極）３と、一方のパターン
電極２上に塗布した銀ペーストなどの導電性接着剤４に
よって接続された発光ダイオード素子５と、発光ダイオ
ード素子５の発光面６側の電極７と前記パターン電極３
とを接続するボンディングワイヤ８と、発光ダイオード
素子５及びボンディングワイヤ８を封止するエポキシ樹
脂等からなる封止用樹脂体９とで構成されている。2. Description of the Related Art Conventionally, as this type of chip type light emitting diode, for example, as shown in FIG. 4, an insulating substrate 1 made of a glass epoxy resin substrate or the like, and a pair formed by etching or the like on the surface of the insulating substrate 1 are used. And a light emitting diode element 5 connected by a conductive adhesive 4 such as a silver paste applied to one of the pattern electrodes 2 and a light emitting diode element 5. The electrode 7 on the surface 6 and the pattern electrode 3
And a sealing resin body 9 made of an epoxy resin or the like for sealing the light emitting diode element 5 and the bonding wire 8.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上記従来の
チップ型発光ダイオード１０にあっては、ループ状のボ
ンディングワイヤ８を発光ダイオード素子５の発光面６
に設けられた電極７と絶縁基板１の表面に設けられたパ
ターン電極３との間に掛け渡して接続することから、ボ
ンディングワイヤ８のループの高さ、及び発光ダイオー
ド素子５からパターン電極３までの距離が一定以上必要
であり、結果的にチップ型発光ダイオード１０の製品寸
法を小さくすることに限界があった。また、製造工程に
おいてボンディングワイヤ８をワイヤボンディングする
ための工程も必要となっていた。By the way, in the above-mentioned conventional chip type light emitting diode 10, the loop-shaped bonding wire 8 is connected to the light emitting surface 6 of the light emitting diode element 5.
And the pattern electrode 3 provided on the surface of the insulating substrate 1 is connected between the electrode 7 and the pattern electrode 3, so that the height of the loop of the bonding wire 8 and the distance from the light emitting diode element 5 to the pattern electrode 3 Is required to be longer than a certain distance, and as a result, there is a limit in reducing the product size of the chip type light emitting diode 10. Further, a step for wire bonding the bonding wire 8 in the manufacturing process is also required.
【０００４】これらの課題を解決するために、例えば図
５及び図６に示したように、発光ダイオード素子５を、
その発光面６が絶縁基板１の表面に対して横向きとなる
ように載置し、発光ダイオード素子５の発光面６側に設
けた下辺電極１１と、発光面６の裏面側に設けた下辺電
極１２を絶縁基板１のパターン電極２，３に導電性接着
剤４を用いて直接接着する手段が考えられる。なお、符
号１５はパターン電極２，３間に塗布されたエポキシな
どの絶縁性接着剤である。In order to solve these problems, for example, as shown in FIG. 5 and FIG.
The light emitting surface 6 is placed so that the light emitting surface 6 is oriented laterally with respect to the surface of the insulating substrate 1, and the lower electrode 11 provided on the light emitting surface 6 side of the light emitting diode element 5 and the lower electrode provided on the back surface side of the light emitting surface 6 Means for directly bonding 12 to the pattern electrodes 2 and 3 of the insulating substrate 1 using the conductive adhesive 4 can be considered. Reference numeral 15 denotes an insulating adhesive such as epoxy applied between the pattern electrodes 2 and 3.
【０００５】しかし、この種のチップ型発光ダイオード
１０では、発光ダイオード素子５のＰ型半導体とＮ型半
導体の接合面１３付近から放出された光の大部分が、主
に発光ダイオード素子５の発光面６側に発せられるた
め、上述のように発光面６が絶縁基板１の表面に対して
横向きとなるように載置した場合、光の放射方向１４が
絶縁基板１の表面とほぼ平行となり、チップ型の発光ダ
イオードとして確保すべき上方向に対して必要な輝度が
得られないおそれがあった。However, in this type of chip type light emitting diode 10, most of the light emitted from the vicinity of the junction 13 between the P-type semiconductor and the N-type semiconductor of the light emitting diode element 5 is mainly emitted from the light emitting diode element 5. Since the light is emitted to the surface 6 side, when the light emitting surface 6 is placed so as to be lateral to the surface of the insulating substrate 1 as described above, the light emission direction 14 is substantially parallel to the surface of the insulating substrate 1, There is a possibility that necessary brightness may not be obtained in the upward direction to be secured as a chip-type light emitting diode.
【０００６】そこで本発明は、発光ダイオード素子と絶
縁基板のパターン電極とをワイヤボンディングすること
なく、直接接着剤を用いて導通させることでチップ型発
光ダイオードの製品寸法の極少化を促進しつつ、更にチ
ップ型発光ダイオードとして必要な上方向への輝度を確
保できるようにすることを目的とする。Therefore, the present invention promotes minimization of the product size of a chip type light emitting diode by directly conducting the light emitting diode element and a pattern electrode of an insulating substrate by using an adhesive without wire bonding, It is still another object of the present invention to secure an upward luminance required for a chip type light emitting diode.
【０００７】[0007]
【課題を解決するための手段】本発明は、上記課題を解
決するために、発光面側とその裏面側にそれぞれ電極が
形成された発光ダイオード素子を絶縁基板の表面に載置
し、絶縁基板に設けたパターン電極に導電性接着剤を用
いて、上記発光ダイオード素子の電極を接続したチップ
型発光ダイオードにおいて、上記発光ダイオード素子
を、その発光面が絶縁基板の表面に対して横向きとなる
ように載置すると共に該発光面を上向きに傾斜させ、且
つ発光ダイオード素子に形成された一対の電極を絶縁基
板のパターン電極に導電性接着剤を用いて直接接続した
ことを特徴とする。According to the present invention, in order to solve the above-mentioned problems, a light emitting diode element having electrodes formed on a light emitting surface side and a rear surface side thereof is mounted on a surface of an insulating substrate. In a chip-type light emitting diode in which the electrodes of the light emitting diode element are connected by using a conductive adhesive for the pattern electrodes provided on the light emitting diode element, the light emitting surface of the light emitting diode element is oriented laterally with respect to the surface of the insulating substrate. And the light emitting surface is inclined upward, and a pair of electrodes formed on the light emitting diode element are directly connected to the pattern electrodes of the insulating substrate using a conductive adhesive.
【０００８】[0008]
【発明の実施の形態】以下、添付図面に基づいて本発明
に係るチップ型発光ダイオードの実施例を詳細に説明す
る。図１及び図２に示した本発明の第１実施例におい
て、チップ型発光ダイオード２０は、ガラスエポキシ樹
脂基板等からなる絶縁基板２１と、絶縁基板２１の表面
にエッチング等により形成された一対のパターン電極２
２，２３と、このパターン電極２２，２３の電極間に塗
布されたエポキシなどの絶縁性接着剤２４と、この絶縁
性接着剤２４の上に接着載置された発光ダイオード素子
２５と、発光ダイオード素子２５を封止する封止用樹脂
体２６とで構成されている。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a chip type light emitting diode according to an embodiment of the present invention. In the first embodiment of the present invention shown in FIGS. 1 and 2, the chip-type light emitting diode 20 has an insulating substrate 21 made of a glass epoxy resin substrate or the like, and a pair of insulating substrates 21 formed on the surface of the insulating substrate 21 by etching or the like. Pattern electrode 2
2, 23, an insulating adhesive 24 such as epoxy applied between the pattern electrodes 22 and 23, a light emitting diode element 25 bonded and mounted on the insulating adhesive 24, and a light emitting diode. And a sealing resin body 26 for sealing the element 25.
【０００９】上記発光ダイオード素子２５は、側面形状
が平行四辺形の六面体で構成されており、発光面２７が
絶縁基板１の表面に対して横向きとなるように載置され
ると共に、発光面２７が上向きに傾斜している。また、
発光面２７の下辺および発光面２７の裏面側の下辺には
それぞれ下辺電極２８，３０が設けられ、これら下辺電
極２８，３０が絶縁基板１のパターン電極２２，２３に
銀ペーストなどの導電性接着剤３１によって直接に接続
されている。なお、上記発光ダイオード素子２５の発光
面２７の傾斜角度は、ウェハをダイシングする際に、ウ
ェハに対する切刃の角度を適宜設定することで、所望の
傾斜角度の発光ダイオード素子２５を得ることができ
る。The light-emitting diode element 25 is formed of a hexahedron having a parallelogram side surface. The light-emitting surface 27 is placed so as to be lateral to the surface of the insulating substrate 1. Is inclined upward. Also,
Lower electrodes 28 and 30 are provided on the lower side of the light emitting surface 27 and the lower side on the back side of the light emitting surface 27, respectively. These lower electrodes 28 and 30 are electrically conductively bonded to the pattern electrodes 22 and 23 of the insulating substrate 1 by silver paste or the like. It is directly connected by the agent 31. In addition, the light emitting diode element 25 having a desired inclination angle can be obtained by appropriately setting the angle of the cutting edge with respect to the wafer when dicing the wafer. .
【００１０】上述の構成からなるチップ型発光ダイオー
ド２０にあっては、発光ダイオード素子２５に電流が流
れると、Ｐ型及びＮ型半導体の接合面３２で発光し、主
に発光ダイオード素子２５の発光面２７と直交する方向
へ光が発せられ、その方向での輝度が最も大きくなる。
従って、図２に示したように、この実施例では発光ダイ
オード素子２５の発光面２７が上方へ向いて傾斜してい
るので、光の照射方向３３も斜め上方を向くことにな
り、絶縁基板１に対して上方向の輝度を確保できること
になる。In the chip-type light-emitting diode 20 having the above-described structure, when a current flows through the light-emitting diode element 25, light is emitted at the junction surface 32 of the P-type and N-type semiconductors. Light is emitted in a direction orthogonal to the surface 27, and the luminance in that direction is maximized.
Therefore, as shown in FIG. 2, in this embodiment, since the light emitting surface 27 of the light emitting diode element 25 is inclined upward, the light irradiation direction 33 also faces obliquely upward. , The luminance in the upward direction can be secured.
【００１１】図３は本発明に係るチップ型発光ダイオー
ド２０の第２実施例を示した断面図である。この実施例
では絶縁基板２１の表面を傾斜させ、この斜面上に一対
のパターン電極２２，２３を形成している。従って、こ
の斜面上に上述と同様の構成からなる発光ダイオード素
子２５を載置した場合、発光面２７が更に上向きとなる
ので、光の照射方向３３を第１実施例よりもさらに上向
きとすることができ、チップ型発光ダイオード２０をプ
リント基板（図示せず）に実装する際の基準面３４に対
して、更に上方向の輝度を確保することができる。な
お、上記絶縁基板２１の表面の傾斜角及び発光ダイオー
ド素子２５の発光面２７の傾斜角を適宜選択すること
で、所望の方向に光を発することができる。FIG. 3 is a sectional view showing a second embodiment of the chip type light emitting diode 20 according to the present invention. In this embodiment, the surface of the insulating substrate 21 is inclined, and a pair of pattern electrodes 22 and 23 are formed on the inclined surface. Therefore, when the light emitting diode element 25 having the same configuration as that described above is mounted on this slope, the light emitting surface 27 is further directed upward, so that the light irradiation direction 33 is set further upward than in the first embodiment. This makes it possible to further secure the luminance in the upward direction with respect to the reference surface 34 when the chip-type light emitting diode 20 is mounted on a printed board (not shown). Light can be emitted in a desired direction by appropriately selecting the inclination angle of the surface of the insulating substrate 21 and the inclination angle of the light emitting surface 27 of the light emitting diode element 25.
【００１２】[0012]
【発明の効果】以上説明したように、本発明に係るチッ
プ型ダイオードによれば、上述の構成としたので、製品
寸法の極少化を図ることができると共に、チップ型発光
ダイオードとして必要な上方向への輝度が確保できると
いった効果を奏する。また、ワイヤボンディングの製造
工程を省略できることから、製造コストの低廉化が図れ
る他、品質面での信頼性も向上するといった効果を奏す
る。As described above, according to the chip-type diode of the present invention, since the above-described configuration is employed, the size of the product can be minimized and the upward direction required for the chip-type light emitting diode can be achieved. This has the effect of ensuring the brightness of the image. Further, since the manufacturing process of the wire bonding can be omitted, the manufacturing cost can be reduced and the reliability in quality can be improved.
【図１】本発明に係るチップ型発光ダイオードの第１実
施例を示した斜視図である。FIG. 1 is a perspective view showing a first embodiment of a chip type light emitting diode according to the present invention.
【図２】上記図１のＡ−Ａ線断面図である。FIG. 2 is a sectional view taken along line AA of FIG. 1;
【図３】チップ型発光ダイオードの第２実施例を示した
断面図である。FIG. 3 is a cross-sectional view showing a second embodiment of a chip type light emitting diode.
【図４】従来のチップ型発光ダイオードの一例を示した
斜視図である。FIG. 4 is a perspective view showing an example of a conventional chip light emitting diode.
【図５】従来のチップ型発光ダイオードの他の例を示し
た斜視図である。FIG. 5 is a perspective view showing another example of a conventional chip-type light emitting diode.
【図６】上記図５のＢ−Ｂ線断面図である。FIG. 6 is a sectional view taken along line BB of FIG. 5;
２０ チップ型発光ダイオード ２１ 絶縁基板 ２２，２３ パターン電極 ２５ 発光ダイオード素子 ２７ 発光面 ２８，３０ 下辺電極 ３１ 導電性接着剤 Reference Signs List 20 chip type light emitting diode 21 insulating substrate 22, 23 pattern electrode 25 light emitting diode element 27 light emitting surface 28, 30 lower electrode 31 conductive adhesive
Claims (1)
形成された発光ダイオード素子を絶縁基板の表面に載置
し、絶縁基板に設けたパターン電極に導電性接着剤を用
いて、上記発光ダイオード素子の電極を接続したチップ
型発光ダイオードにおいて、 上記発光ダイオード素子を、その発光面が絶縁基板の表
面に対して横向きとなるように載置すると共に該発光面
を上向きに傾斜させ、且つ発光ダイオード素子に形成さ
れた一対の電極を絶縁基板のパターン電極に導電性接着
剤を用いて直接接続したことを特徴とするチップ型発光
ダイオード。1. A light emitting diode element having electrodes formed on a light emitting surface side and a back surface side thereof, respectively, is mounted on a surface of an insulating substrate, and the light emitting diode element is provided on the insulating substrate by using a conductive adhesive for a pattern electrode. In a chip-type light-emitting diode to which electrodes of a diode element are connected, the light-emitting diode element is mounted so that its light-emitting surface is oriented laterally with respect to the surface of the insulating substrate, and the light-emitting surface is inclined upward, and light is emitted. A chip-type light-emitting diode, wherein a pair of electrodes formed on a diode element is directly connected to a pattern electrode on an insulating substrate using a conductive adhesive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8269806A JPH10117018A (en) | 1996-10-11 | 1996-10-11 | Chip-type light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8269806A JPH10117018A (en) | 1996-10-11 | 1996-10-11 | Chip-type light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10117018A true JPH10117018A (en) | 1998-05-06 |
Family
ID=17477440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8269806A Pending JPH10117018A (en) | 1996-10-11 | 1996-10-11 | Chip-type light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10117018A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281445A (en) * | 2003-03-12 | 2004-10-07 | Sanyo Electric Co Ltd | Laminated light emitting diode element |
| KR20130021917A (en) * | 2011-08-24 | 2013-03-06 | 엘지이노텍 주식회사 | Light emitting device package |
| JP2013247369A (en) * | 2012-05-29 | 2013-12-09 | ▲さん▼圓光電股▲ふん▼有限公司 | Sapphire substrate for forming light emitting diode chip capable of emitting light in multiple directions, light emitting diode chip, and light emitting device |
| CN106169467A (en) * | 2013-05-22 | 2016-11-30 | 晶元光电股份有限公司 | Light-emitting device |
| US10247395B2 (en) | 2012-05-29 | 2019-04-02 | Epistar Corporation | Light emitting device |
| CN110085727A (en) * | 2019-06-04 | 2019-08-02 | 永林电子有限公司 | A kind of side tilts upward scattering and shines RGB Multifunctional LED device |
| JP2019201141A (en) * | 2018-05-17 | 2019-11-21 | スタンレー電気株式会社 | Optically transparent plate having light emitting function and method for manufacturing the same |
| DE102020125892A1 (en) | 2020-10-02 | 2022-04-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | OPTOELECTRONIC DEVICE AND METHOD OF PRODUCING OPTOELECTRONIC DEVICE |
-
1996
- 1996-10-11 JP JP8269806A patent/JPH10117018A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004281445A (en) * | 2003-03-12 | 2004-10-07 | Sanyo Electric Co Ltd | Laminated light emitting diode element |
| KR20130021917A (en) * | 2011-08-24 | 2013-03-06 | 엘지이노텍 주식회사 | Light emitting device package |
| JP2013247369A (en) * | 2012-05-29 | 2013-12-09 | ▲さん▼圓光電股▲ふん▼有限公司 | Sapphire substrate for forming light emitting diode chip capable of emitting light in multiple directions, light emitting diode chip, and light emitting device |
| US10247395B2 (en) | 2012-05-29 | 2019-04-02 | Epistar Corporation | Light emitting device |
| US10670244B2 (en) | 2012-05-29 | 2020-06-02 | Epistar Corporation | Light emitting device |
| US11255524B2 (en) | 2012-05-29 | 2022-02-22 | Epistar Corporation | Light emitting device |
| US11808436B2 (en) | 2012-05-29 | 2023-11-07 | Epistar Corporation | Light emitting apparatus |
| CN106169467A (en) * | 2013-05-22 | 2016-11-30 | 晶元光电股份有限公司 | Light-emitting device |
| JP2019201141A (en) * | 2018-05-17 | 2019-11-21 | スタンレー電気株式会社 | Optically transparent plate having light emitting function and method for manufacturing the same |
| CN110085727A (en) * | 2019-06-04 | 2019-08-02 | 永林电子有限公司 | A kind of side tilts upward scattering and shines RGB Multifunctional LED device |
| DE102020125892A1 (en) | 2020-10-02 | 2022-04-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | OPTOELECTRONIC DEVICE AND METHOD OF PRODUCING OPTOELECTRONIC DEVICE |
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