CN106169467A - Light-emitting device - Google Patents

Light-emitting device Download PDF

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Publication number
CN106169467A
CN106169467A CN201610836364.2A CN201610836364A CN106169467A CN 106169467 A CN106169467 A CN 106169467A CN 201610836364 A CN201610836364 A CN 201610836364A CN 106169467 A CN106169467 A CN 106169467A
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CN
China
Prior art keywords
light
emitting diode
backlight unit
transparency carrier
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610836364.2A
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Chinese (zh)
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CN106169467B (en
Inventor
潘锡明
郑惟纲
黄知澍
李承鸿
叶时有
蒲计志
杨程光
汤士杰
洪祥富
王子翔
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Epistar Corp
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Epistar Corp
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Publication date
Application filed by Epistar Corp filed Critical Epistar Corp
Priority to CN201610836364.2A priority Critical patent/CN106169467B/en
Priority claimed from CN201310191958.9A external-priority patent/CN103456869B/en
Publication of CN106169467A publication Critical patent/CN106169467A/en
Application granted granted Critical
Publication of CN106169467B publication Critical patent/CN106169467B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention provides a kind of light-emitting device, including: light-emitting diode chip for backlight unit and load bearing seat, light-emitting diode chip for backlight unit includes transparency carrier, the first light emitting diode construction and wavelength conversion layer, and transparency carrier has growth face and side；First light emitting diode construction is arranged on described growth face；Wavelength conversion layer covers described first light emitting diode construction, but does not cover described side；Load bearing seat connects described light-emitting diode chip for backlight unit, and described load bearing seat and described transparency carrier form the angle of a non-90 degree.The present invention can improve light type cost-effective with improving luminous efficiency, illumination effect.

Description

Light-emitting device
Technical field
The present invention is about a kind of light-emitting device.
Background technology
The light that light emitting diode (light emitting diode, LED) itself is issued is biased into a kind of directivity Light source, be not as open market sell the light source that bulb is a kind of divergence form, therefore application on can be restricted.Lift Example illustrates, application on the light fixture of general indoor and outdoor lighting is also unable to reach required light type.Additionally, it is known that light-emitting diodes Die only can one side luminous, therefore there is relatively low luminous efficiency.
Summary of the invention
One purpose of the present invention is to provide a light-emitting device, with improving luminous efficiency, illumination effect, improves light type and saves Cost-saving.
For solving above-mentioned technical problem, the technical solution adopted in the present invention is:
A kind of light-emitting device, including:
Light-emitting diode chip for backlight unit, including:
Transparency carrier, has growth face and side；
The first light emitting diode construction being arranged on described growth face；And
Wavelength conversion layer, covers described first light emitting diode construction, but does not cover described side；And
Load bearing seat, connects described light-emitting diode chip for backlight unit, and described load bearing seat and described transparency carrier form the angle of a non-90 degree.
As a further improvement on the present invention, the second light emitting diode construction being arranged on described growth face is also included.
As a further improvement on the present invention, described wavelength conversion layer seriality ground covers described first light emitting diode knot Structure and described second light emitting diode construction.
As a further improvement on the present invention, described first light emitting diode construction and described second light emitting diode knot Structure connects in a series arrangement.
As a further improvement on the present invention, described wavelength conversion layer directly contacts described first light emitting diode construction.
As a further improvement on the present invention, described transparency carrier also includes first not covered by described wavelength conversion layer Part.
As a further improvement on the present invention, described light-emitting diode chip for backlight unit also includes being arranged on described Part I Connect electrode.
As a further improvement on the present invention, described transparency carrier also includes the master meter relative to each other with described growth face Face, described wavelength conversion layer covers described first type surface.
As a further improvement on the present invention, at least part of light that described first light emitting diode construction is sent can be penetrated Enter described transparency carrier and go out light from described first type surface.
As a further improvement on the present invention, at least part of light that described first light emitting diode construction is sent can be penetrated Enter described transparency carrier and go out light from described side.
Light emitting diode construction is arranged on transparency carrier by the light-emitting diode chip for backlight unit of the present invention, and light emitting diode knot The light that structure is sent can penetrate transparency carrier.Therefore the light-emitting diode chip for backlight unit of the present invention can the most multi-direction or omnirange be sent out Light, raising luminous efficiency also can improve the problem that light-emitting diode chip for backlight unit light type is the best in the past.It addition, the present invention's states load bearing seat Angle with described transparency carrier forms a non-90 degree, can promote illumination effect.
Accompanying drawing explanation
Figure 1A Yu Figure 1B is the structural representation of the light-emitting diode chip for backlight unit of a preferred embodiment of the present invention.
Fig. 2 A, Fig. 2 B are coupled to the light emitting diode construction of the multi-form of the preferred embodiment that Fig. 2 C is the present invention The schematic diagram of wire.
Fig. 3 A and Fig. 3 B is the layout schematic diagram of the wavelength conversion layer of a preferred embodiment of the present invention.
Fig. 4 is the generalized section of the light-emitting diode chip for backlight unit of another preferred embodiment of the present invention.
Fig. 5 is the equivalent circuit of the light-emitting diode chip for backlight unit of an alternate embodiment of another preferred embodiment of the present invention Figure.
Fig. 6 is the schematic diagram of the light-emitting diode chip for backlight unit of another preferred embodiment of the present invention.
Fig. 7 A is the schematic diagram of the load bearing seat of a preferred embodiment of the present invention.
Fig. 7 B is the schematic diagram of the circuit substrate of a preferred embodiment of the present invention.
Fig. 7 C is the schematic diagram of the reflecting mirror of a preferred embodiment of the present invention.
Fig. 7 D is the schematic diagram of the diamond-like carbon film of a preferred embodiment of the present invention.
Fig. 8 is the schematic diagram of the light-emitting device of a preferred embodiment of the present invention.
Fig. 9 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Figure 10 A, Figure 10 B and Figure 10 C are that the transparency carrier grafting of a preferred embodiment of the present invention or gluing are in load bearing seat Schematic diagram.
Figure 11 A and Figure 11 B is that the transparency carrier gluing of a preferred embodiment of the present invention is in the showing of load bearing seat of tool support It is intended to.
Figure 12 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention.
Figure 13 is the schematic perspective view of the device pedestal of the light-emitting device of another preferred embodiment of the present invention.
Figure 14 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention.
Figure 15 A, Figure 15 B, Figure 15 C and Figure 15 D are that a preferred embodiment of the present invention is saturating with point symmetry or line symmetric arrays Bright substrate schematic top plan view on load carrier.
Figure 16 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
The schematic diagram of the lamp housing of Figure 17 A and a preferred embodiment that 17B figure is the present invention.
Figure 17 C is the top cross-sectional view of the billboard-type lamp housing of a preferred embodiment of the present invention.
Figure 17 D, Figure 17 E, Figure 17 F and Figure 17 G are the enforcement schematic diagram of the bulb lamp formula of a preferred embodiment of the present invention.
Figure 18 is the schematic diagram of the lamp bar of another preferred embodiment of the present invention.
Figure 19 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention.
Figure 20 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.
Detailed description of the invention
Describe the present invention below with reference to detailed description of the invention shown in the drawings.But these embodiments are also It is not intended to the present invention, structure that those of ordinary skill in the art is made, method or functionally according to these embodiments Conversion is all contained in protection scope of the present invention.
Refer to shown in Figure 1A Yu Figure 1B, Figure 1A Yu Figure 1B is the light-emitting diode chip for backlight unit of a preferred embodiment of the present invention Or the structural representation of luminous plaque.As shown in Figure 1A Yu Figure 1B, light-emitting diode chip for backlight unit 1 includes: a transparency carrier 2；One growth face 210；One first first type surface 21A；One second first type surface 21B and at least multi-direction light-emitting diode structure 3.Wherein, Transparency carrier 2 is as flat sheet shape and has two main face bodies, and any of which main face body is growth face 210, has The light emitting diode construction 3 of lighting function is arranged on this growth face 210, and light emitting diode construction 3 is not hidden by transparency carrier 2 The light-emitting area 34 covered, with the part growth face 210 being not provided with light emitting diode construction 3 be collectively forming can be luminous the first master meter Face 21A.It is then the second first type surface 21B that transparency carrier 2 is not provided with another main face body of light emitting diode construction 3.Above-mentioned layout Mode order equally reaches effect on the contrary, and also can be respectively provided with light emitting diode construction 3 in 2 two faces of transparency carrier, its In light emitting diode construction 3 on two faces can correspondence be staggered, when making the light emitting diode construction 3 on each luminous, light Line can penetrate transparency carrier 2 smoothly and go out light from another side, and do not covered by the light emitting diode construction on another side, increases single The luminous intensity that plane is long-pending.The material of transparency carrier 2 can be aluminium oxide (Al2O3), the sapphire containing aluminium oxide, carborundum (SiC), glass, plastics or rubber, wherein, a kind of preferred embodiment of the present invention is to use sapphire substrate, because this Material substantially mono-crystalline structures, not only has preferable light transmittance, and heat-sinking capability is good, can extend light-emitting diode chip for backlight unit 1 Life-span；But use tradition sapphire substrate to have the problem of easy fragmentation in the present invention, therefore the present invention experiments verify that, the present invention Transparency carrier 2 preferably select thickness more than or equal to the sapphire substrate of 200 microns (um), so can reach the most reliable Degree, and have preferably carrying and light transmission function.Preferably to can be selected for rising angle big for the light emitting diode construction 3 of the present invention simultaneously In 180 degree of persons, the light emitting diode construction 3 being i.e. arranged on transparency carrier 2 can send toward away from orientation substrate except light-emitting area 34 Outside the light left, light emitting diode construction 3 also can send the light being at least partially into transparency carrier 2, and enters transparent base The light of plate 2 is in addition to the second first type surface 21B of first first type surface 21A corresponding on transparency carrier 2 goes out light, it is possible to from transparency carrier The part growth face 210 being not provided with light emitting diode construction 3 of 2 goes out light with other surfaces, makes the light-emitting diode chip for backlight unit 1 can be down to Reach less two-sided go out light or omnirange go out the multi-direction light-out effect such as light.In the present invention, the first first type surface 21A or the second master meter The area of face 21B is more than five times of the summation area of the light-emitting area 34 of light emitting diode construction 3, is so designed as taking into account and sends out The best allocation ratio of the conditions such as light efficiency and heat radiation.
It addition, another preferred embodiment of the present invention is the first first type surface 21A and second master meter of light-emitting diode chip for backlight unit 1 The colour temperature difference that face 21B sends equals to or less than 1500K, makes light-emitting diode chip for backlight unit 1 have the most consistent illumination effect.And On the light transmission features of transparency carrier 2, the wave-length coverage emitted beam when light emitting diode construction 3 is more than or equal to 420 nanometers, And/or when the wave-length coverage of this light is less than or equal to 470 nanometer, under above-mentioned transparency carrier 2 thickness condition, transparency carrier The light transmittance of 2 is more than or equal to 70%.
The present invention is not limited with above-described embodiment.Hereafter will sequentially introduce other preferred embodiment of the present invention, and be It is easy to the deviation of each embodiment of comparison and simplifies explanation, using identical symbol mark equivalent in the following embodiments Assembly, and the deviation mainly for each embodiment illustrates, and no longer repeats repeating part.
Refer to Fig. 2 A, Fig. 2 B and Fig. 2 C, the present invention powers to obtain to carry out luminescence, light emitting diode construction 3 Body include one first electrode 31A and one second electrode 31B, this first electrode 31A and the second electrode 31B the most respectively be positioned at transparent One first connection wire 23A and one second on substrate 2 connects wire 23B and is electrically connected with.Wherein, Fig. 2 A, Fig. 2 B and Fig. 2 C Disclose respectively multi-form light emitting diode construction 3 and with the coupling mode of wire.Fig. 2 A is horizontal type light emitting diode Structure, wherein light emitting diode construction 3 is formed on the growth face 210 of transparency carrier 2, the first electrode 31A and the second electrode 31B It is electrically coupled to the first connection wire 23A and second respectively in routing mode and connects wire 23B；2B figure is crystal-coated light-emitting two Pole tubular construction, light emitting diode construction 3 couples with transparency carrier 2 for being inverted and passing through the first electrode 31A and the second electrode 31B, Wherein the first electrode 31A and the second electrode 31B is electrically coupled to the first connection wire 23A and the respectively with welding or gluing mode Two connect wire 23B；Fig. 2 C is then to arrange the first electrode 31A and the second electrode 31B at the two ends of light emitting diode construction 3, and The first electrode 31A and the second electrode 31B is made to be connected wire with first respectively in the way of upright setting light emitting diode construction 3 23A and second connects wire 23B and is connected.
Refer to Fig. 3 A and Fig. 3 B, the light-emitting diode chip for backlight unit 1 of the present invention also includes a wavelength conversion layer 4, and it is arranged at On first first type surface 21A and/or the second first type surface 21B, or it is directly arranged on light emitting diode construction 3, and it can be direct Contact light emitting diode construction 3, or a segment distance adjacent with light emitting diode construction 3 and be not directly contacted with.Wavelength conversion layer 4 Containing at least one fluorescent material, as inorganic in garnet system, sulfate system or silicate etc. or the fluorescent material of organic material, with Receive the light that at least partially luminescent diode structure 3 emits beam and is converted to another kind of wave-length coverage.Such as, light-emitting diodes is worked as Tubular construction 3 sends blue light, and wavelength conversion layer 4 conversion portion blue light is gold-tinted, and makes light-emitting diode chip for backlight unit 1 at blue light and gold-tinted White light is finally sent under mixing.The light-emitting area being mainly light emitting diode construction 3 additionally, due to the first first type surface 21A light source is straight Picking out light, the second first type surface 21B light source is then the light that the light penetration transparency carrier 2 of light emitting diode construction 3 sends, luminous The light intensity on two surfaces of diode chip for backlight unit 1 is different, so another preferred embodiment of the present invention is light-emitting diodes tube core The fluorescent material content corresponding configuration of the sheet 1 wavelength conversion layer 4 on the first first type surface 21A and the second first type surface 21B, wherein first (or the fluorescent material on light emitting diode construction is to the second first type surface 21B to the fluorescent material on the second first type surface 21B for first type surface 21A On fluorescent material) content ratio scope preferably from 1 to 0.5 to 1 to 3, can make light intensity or the light of light-emitting diode chip for backlight unit 1 Shape can meet application demand, and makes the first first type surface 21A and the second first type surface 21B of light-emitting diode chip for backlight unit 1 send Colour temperature difference equals to or less than 1500K, promotes wavelength conversion efficiency and the illumination effect of light-emitting diode chip for backlight unit 1.
Refer to Fig. 4.Fig. 4 is the generalized section of the light-emitting diode chip for backlight unit of another preferred embodiment of the present invention.As Shown in Fig. 4, the light-emitting diode chip for backlight unit 10 of the present embodiment includes that a transparency carrier 2, several light emitting diode constructions 14, one are exhausted Edge layer 20 and a conductive pattern 22.It is positioned opposite to each other with one second first type surface 21B that transparency carrier 2 has a growth face 210.If A dry light emitting diode construction 14 arranges or is formed on the growth face 210 of transparency carrier 2, and each light emitting diode construction 14 wraps Include one first electrode 16 and one second electrode 18.The light-emitting area 34 that light emitting diode construction 14 is not covered by transparency carrier 2, with The part growth face 210 being not provided with light emitting diode construction 14 is collectively forming one first first type surface 21A.Insulating barrier 20 at least provided with On several light emitting diode constructions 14 of part.Conductive pattern 22 be arranged on insulating barrier 20 and with at least part of first electrode 16 are electrically connected with at least part of second electrode 18.Conductive pattern 22 can be constituted by such as metallic circuit layout or general routing Pattern, but the conductive pattern being not limited and can being constituted by other material.
Light emitting diode construction 14 can include one first semiconductor layer 141, active layers 142 and one second semiconductor layer 143, it is sequentially formed on transparency carrier 2.First semiconductor layer 141 can be preferably a n type semiconductor layer, and the second semiconductor layer 143 can be preferably a p type semiconductor layer, but is not limited.First semiconductor layer 141, active layers 142 and the second semiconductor layer The material of 143 includes the nitride of three A races, such as aluminium nitride (AlN) or gallium nitride (GaN), but is not limited.Light-emitting diodes Die 10 can farther include a cushion 13, is formed between the first semiconductor layer 141 and transparency carrier 2.Cushion 13 Material can include the nitride of three A races, such as aluminium nitride or gallium nitride (GaN), but be not limited.First electrode 16 and Two electrodes 18 are electrically connected with the second semiconductor layer 143 and the first semiconductor layer 141 respectively.First electrode 16 and the second electrode 18 can be metal electrode, but is not limited.
It addition, light-emitting diode chip for backlight unit 10 also includes that a wavelength conversion layer 4 is arranged at transparency carrier 2 and light emitting diode knot On structure 14.The light (not shown) that light emitting diode construction 14 is sent can be a specific wavelength, and wavelength conversion layer 4 can be at least This specific wavelength of fractional conversion, can make light-emitting diode chip for backlight unit 10 send other specific wavelength or wave-length coverage by this conversion Bigger light.
In the present embodiment, light emitting diode construction 14 is electrically connected with in a series arrangement by conductive pattern 22, but not As limit.It addition, in the present embodiment, insulating barrier 20, conductive pattern 22, light emitting diode construction 14 (include that the first half lead Body layer 141, active layers 142 and the second semiconductor layer 143) and cushion 13 for make in the lump, i.e. cushion 13, the first half lead After body layer 141, active layers 142 and the second semiconductor layer 143 are sequentially arranged on transparency carrier 2, the most sequentially arrange absolutely Edge layer 20 and conductive pattern 22 also cut.Insulating barrier 20 such as lithographic and etch process available with conductive pattern 22 set Put, but be not limited.The insulating barrier 20 of the light-emitting diode chip for backlight unit 10 of the present embodiment, conductive pattern 22 are tied with light emitting diode Structure 14 utilizes wafer scale manufacture method to be made, and can save cost of manufacture in a large number and have preferably reliability.
In the present invention, in order to increase amount of light that light leaves from transparency carrier 2 and use being evenly distributed of light, second is main Surface 21B optionally has a nonplanar structure 12M.Nonplanar structure 12M can be the geometry knot of various protrusion or depression Structure, such as pyramid, cone, hemisphere or triangular prism etc., and the arrangement of nonplanar structure 12M can be systematicness arrangement or with Machine arranges.It addition, be optionally provided with a diamond-like carbon film (diamond-like on the second first type surface 21B Carbon, DLC) 25, in order to increase heat conduction and radiating effect.It addition, between the second first type surface 21B and diamond-like carbon film 25 One blooming 28 can be set.In the selection of material, the refractive index of blooming 28 preferably can between the refractive index of transparency carrier 2 with Between the refractive index of diamond-like carbon film 25 or the refractive index of wavelength conversion layer 4, amount of light can be increased by this conversion.
Refer to Fig. 5, and please with reference to Fig. 4 and other are above-mentioned graphic.Fig. 5 is sending out of an alternate embodiment of the present invention The equivalent circuit diagram of luminous diode chip.As it is shown in figure 5, in this alternate embodiment, several of light-emitting diode chip for backlight unit 10 ' Light emitting diode construction 14 can be electrically connected with and pass through connection wire with outer by conductive pattern 22 with series/parallel hybrid mode Portion's power supply electric property coupling.
Refer to the schematic perspective view of the light-emitting diode chip for backlight unit of another preferred embodiment that Fig. 6, Fig. 6 are the present invention.As Shown in Fig. 6, the light-emitting diode chip for backlight unit 310 of the present invention includes that transparency carrier 2, an at least light emitting diode construction 3,1 first is even Receiving electrode 311A, one second connection electrode 311B and at least one wavelength conversion layer 4.Wherein light emitting diode construction 3 is arranged at On the growth face 210 of bright substrate 2, and form one first first type surface 21A of luminescence.In this embodiment, light emitting diode construction 3 A rising angle more than 180 degree, and at least part of light that light emitting diode construction 3 is sent can inject transparency carrier 2, and Inject light and at least partly can go out light from the one second first type surface 21B of corresponding first first type surface 21A, part from transparency carrier 2 its His surface goes out light, and then reaches multiaspect or the illumination effect of hexahedro luminescence.First connects electrode 311A and second connects electrode 311B is respectively arranged at two ends or homonymy (not shown) on transparency carrier 2, and respectively one first connection on transparency carrier 2 is led The chip that line and one second connection wire are extended is to external electrode, so first connects electrode 311A and second connection electrode 311B It is electrically connected with light emitting diode construction 3 respectively.Wavelength conversion layer 4 at least covers light emitting diode construction 3 and/or the second master meter Face 21B also exposes at least part of first connection electrode 311A and the second connection electrode 311B, and wherein wavelength conversion layer 4 is at least part of Absorb the light that light emitting diode construction 3 and/or transparency carrier 2 are sent, and be converted into the light of another wavelength, then with not Absorbed light mixed light, increases emission wavelength range and the illumination effect of light-emitting diode chip for backlight unit 310.That is wavelength turns Change layer 4 and can not cover the first connection electrode 311A and second connection electrode 311B.Light-emitting diode chip for backlight unit due to the present embodiment 310 have the first connection electrode 311A and the second connection electrode 311B being respectively arranged at opposite end on transparency carrier 2, so Light-emitting diode chip for backlight unit 310 is combined with applicable load bearing seat after can completing alone to make again, without using Conventional luminescent Diode encapsulation procedure, therefore can reach and promotes overall fine ratio of product, simplifies the load bearing seat design joined together by structure and increase The effects such as change.
Refer to Fig. 7 A, one embodiment of the invention is to use the light-emitting device 11 of above-mentioned light-emitting diode chip for backlight unit, wherein Light-emitting device 11 also includes a load bearing seat 5, makes the transparency carrier 2 of light-emitting diode chip for backlight unit except lying against this load bearing seat 5, it is possible to Erect thereon and be coupled to this load bearing seat 5, make that there is between transparency carrier 2 and load bearing seat 5 one first angle theta1, this first folder Angle θ1Angle can be fixing or need to transfer according to light-emitting device light shape, wherein the first angle theta of preferred embodiment1Angular range Between 30 degree to 150 degree.
Refer to Fig. 7 B, the load bearing seat 5 of the light-emitting device 11 of the present invention also includes a circuit substrate 6 and external power source coupling Connect, and be electrically coupled on transparency carrier 2 first connection wire and second connect wire (not shown), and and light-emitting diodes Tubular construction 3 is electrically connected with, and makes external power source pass through the luminous required power supply of circuit substrate supply light emitting diode construction 3.If without setting Putting this circuit substrate 6, light emitting diode construction 3 also can be directed through the first connection wire and second and connect wire (not shown) It is electrically connected at load bearing seat 5, makes external power source via load bearing seat 5, this light emitting diode construction 3 can be powered.
Refer to Fig. 7 C, the light-emitting device 11 of the present invention also includes that a reflecting mirror or wave filter 8 are arranged at the second first type surface 21B is upper or on growth face 210, described reflecting mirror or wave filter 8 can reflect described light emitting diode construction 3 and be sent at least partly Light, and make the light partly injecting described transparency carrier 2 change by described first first type surface 21A injection.This reflecting mirror 8 can include At least one metal level or a Bragg mirror (Bragg reflector), but be not limited.Wherein, Bragg mirror Can be had dielectric film institute's storehouse of different refractivity by multilamellar and constitute, or it is thin to be had the dielectric of different refractivity by multilamellar Film is constituted with multiple layer metal oxide institute's storehouse.
Refer to Fig. 7 D, the transparency carrier 2 of the light-emitting device 11 of the present invention also includes a diamond-like carbon film (diamond- Like carbon, DLC) 9, wherein this diamond-like carbon film 9 is arranged at growth face 210 and/or second master of transparency carrier 2 On the 21B of surface, to increase heat conduction and radiating effect.
Refer to Fig. 8.Fig. 8 is the light-emitting device schematic diagram of a preferred embodiment of the present invention.As shown in Figure 8, this enforcement The light-emitting device 100 of example includes light-emitting diode chip for backlight unit 10 and a load bearing seat 26, and wherein this light-emitting diode chip for backlight unit 10 embeds In this load bearing seat 26, and being electrically connected with through connecting the wire electrode 30,32 with this load bearing seat, a power supply can be by this electrode 30,32 provide driving voltage V+, V-to drive this light-emitting diode chip for backlight unit 10 to emit beam L.At the present embodiment light-emitting device In 100, the structure of light-emitting diode chip for backlight unit 10 can be as described in above-described embodiment, and conductive pattern 22 and at least partially luminescent two poles First electrode 16 of tubular construction 14 is electrically connected with the second electrode 18, make at least partially luminescent diode structure 14 formed series connection or Other are such as circuit such as in parallel or connection in series-parallel, and wherein conductive pattern 22 can be such as metallic circuit layout or typically routing pie graph Case, but be not limited, the conductive pattern that also can be constituted by other material or form；And be not connected with this conductive pattern 22 First electrode 16 and the second electrode 18 are then electrically connected with by being connected the wire electrode 30,32 respectively with load bearing seat 26.Additionally send out The beam angle of at least one light emitting diode construction 14 emitted light L of luminous diode chip 10 is more than 180 degree or has multiple Light-emitting area so that the light direction of this light-emitting diode chip for backlight unit 10 includes going out from the first first type surface 21A and the second first type surface 21B Light, and some light also can make light emitting diode by four sidewalls injections of light emitting diode construction 14 and/or transparency carrier 2 Chip 10 have hexahedro luminescence or omnirange etc. multi-direction go out light characteristic.
It addition, the light-emitting diode chip for backlight unit 10 of the present embodiment also includes wavelength conversion layer 4, diamond-like carbon film 25 and optics Film 28 is set in turn on the second first type surface 21B of transparency carrier 2, and wavelength conversion layer 4 may further be provided in luminous two On pole tubular construction 14 or the first first type surface 21A.Wherein wavelength conversion layer 4 is switchable to small part light emitting diode construction 14 and is sent out The light gone out is the light of another wave-length coverage, makes light-emitting diode chip for backlight unit 10 send specific photochromic or that wave-length coverage is bigger light The some blue light that line, such as light emitting diode construction 14 produce is convertible into as gold-tinted after being irradiated to wavelength conversion layer 4, and sends out Luminous diode chip 10 can send the white light being mixed into by blue light and gold-tinted.Wherein light emitting diode construction 14 and light-emitting diodes Die 10 improves heat radiation and luminous efficiency, and light-emitting diode chip for backlight unit 10 because arranging diamond-like carbon film 25 and blooming 28 Transparency carrier 2 there is the material of good thermal conduction characteristic, heat produced by light emitting diode construction can be directly conducted to Load bearing seat 26, so the light-emitting device of the present invention can use high-power light emitting diode construction, but the luminescence of preferred embodiment Device is under same power condition, forms and spread the light emitting diode construction of multiple smaller power on the substrate 12, to fill Dividing the thermal conduction characteristic utilizing substrate 12, the power such as each light emitting diode construction 14 of the present embodiment is less than or equal to such as 0.2 watt, but be not limited.
Refer to Fig. 9.Fig. 9 is the light-emitting device schematic diagram of a preferred embodiment of the present invention.As it is shown in figure 9, this enforcement The light-emitting device 200 of example also includes a support 51, in order to connecting luminous diode chip 10 and load bearing seat 26, wherein light-emitting diodes Die 10 is fixed on the side of support 51 by a bonding layer 52, and the opposite side of support 51 can be located on load bearing seat 26.Separately Support arm 51 is elastic can to adjust angle, θ1, make the angle theta of light-emitting diode chip for backlight unit 10 and load bearing seat 261Between 30 degree to 150 degree Between.The material of support 51 can include selected from aluminum metal, composite metal material, copper conductor, electric wire, ceramic substrate or printing electricity Road plate arbitrary.
Refer to Figure 10 A, Figure 10 B and Figure 10 C, when the transparency carrier 2 in the present invention is arranged on load bearing seat 5, preferably Embodiment is to reach both joints by the way of grafting or gluing.
As shown in Figure 10 A, transparency carrier 2 is for being arranged on load bearing seat 5, and is plugged in the monotrysian type slot 61 of load bearing seat 5, Make light-emitting diode chip for backlight unit by connecting wire and this slot 61 electric property coupling.At this moment the knot of the light emitting diode on transparency carrier 2 Structure (not shown) couples mutually with the power supply supply of load bearing seat 5, and conductive pattern or the connection wire on transparency carrier 2 extends to Bright substrate 2 edge is also integrated into golden finger structure or such as connection electrode 311A and 311B with several conductive contact blades, the most just It it is electrical port.Slot 61 can allow transparency carrier 2 insert, and makes light emitting diode construction (not shown) power at acquisition load bearing seat 5 While, transparency carrier 2 is also fixed in the slot 61 of load bearing seat 5.
Refer to Figure 10 B, it is by grafting transparency carrier 2 structural representation of porous type slot on load bearing seat 5.? In this embodiment, transparency carrier 2 has at least a pair of pin configuration, and one of them pin can be electrical positive pole, and another then may be used For electrical negative pole, all there is conductive contact blade as port at two.It is to say, electrically hold at least provided with one on above-mentioned pin Mouthful.And accordingly, at load bearing seat 5, then there is the slot 61 that at least two is consistent with pin inserting surface size, make the transparency carrier 2 can Engage smoothly with load bearing seat 5, and allow light emitting diode construction obtain power supply.
Refer to Figure 10 C, it is for engage transparency carrier 2 with load bearing seat 5.Engage during, can through gold, The metals such as stannum, indium, bismuth, silver do welding auxiliary and engage, or make the silica gel of apparatus electric conductivity or epoxy resin auxiliary fixing Transparency carrier 2, and the conductive pattern of light-emitting diode chip for backlight unit can be made or connect wire by bonding layer and the electrode on load bearing seat It is electrically connected with.
Refer to Figure 11 A and Figure 11 B, the light-emitting device 11 of the present embodiment mainly comprises described in same above-described embodiment, wherein Load bearing seat 5 can be aluminum metal, combined type alumina-bearing material, copper conductor or the electric wire composition that a metal basal board is the most bent, it is possible to For ceramic substrate or printed circuit board (PCB).The surface of load bearing seat 5 or side have at least one support 62, and this support 62 is and carrying Seat 5 separates or the mechanism member of integration.Light-emitting diode chip for backlight unit can couple, also with support 62 phase by the way of gluing or welding Just it is made by bonding layer 63 and transparency carrier 2 is fixed on load bearing seat 5, and the surface of part unsupported with load bearing seat 5 maintains tool There is the first angle theta1, and the surface of the unsupported part of load bearing seat 5 may also set up light-emitting diode chip for backlight unit to promote light-emitting device The illumination effect of 11；It addition, the mode that light-emitting diode chip for backlight unit also can pass through grafting (not shown) is connected with support 62, the most just It is made by adapter and combines chip and support and/or support and load bearing seat, and transparency carrier 2 is fixed on load bearing seat 5.Owing to holding Carry seat 5 bent with support 62, therefore add the light-emitting device 11 motility when application, several can be used simultaneously different The LED chip of emission wavelength is closed out different photochromic, makes light-emitting device 11 have variability with satisfied different demands.
Refer to Figure 12.As shown in figure 12, the light-emitting device of the present embodiment includes at least one light-emitting diode chip for backlight unit 1 and Load bearing seat 5, wherein this load bearing seat 5 includes at least one support 62 and at least one circuit pattern P.The master of light-emitting diode chip for backlight unit 1 Form and as described in embodiment before, and can couple with support 62 phase with one end of transparency carrier, to avoid or to reduce support 62 Light-emitting diode chip for backlight unit 1 is gone out the screening effect of light.Load bearing seat 5 can be aluminum metal substrate, combined type aluminum metal substrate, copper Wire or electric wire are constituted, it is possible to for ceramic substrate or printed circuit board (PCB), support 62 can be cut also from a part for load bearing seat 5 Bend an angle (the first angle theta such as above-mentioned Figure 11 A Yu Figure 11 B1) form.Circuit pattern P is arranged on load bearing seat 5, and has There are at least 1 electrical end points of group and a power supply to be electrically connected with, and some extends on support 62 and light-emitting diode chip for backlight unit 1 Connect wire to be electrically connected with, make this light-emitting diode chip for backlight unit 1 can be electrically connected with the power supply by the circuit pattern P of load bearing seat 5.Hold Carry seat 5 and also include at least one hole H or at least breach G, make the fixture such as screw, nail or latch etc. can be by this hole Load bearing seat 5 is made further structure dress or installation, simultaneously hole H or scarce with other assemblies according to light-emitting device application scenarios by H or breach G Mouth G also increases the area of dissipation of load bearing seat 5, promotes the radiating effect of light-emitting device.
Refer to Figure 13.Figure 13 is the three-dimensional signal of the device pedestal of the light-emitting device of another preferred embodiment of the present invention Figure.As shown in figure 13, the device pedestal 322 of the present embodiment includes load bearing seat 5 and at least one support 62, with the enforcement of Figure 12 Example is compared, and the support 62 of the present embodiment also includes at least one shape portion 342 and a breach 330, and wherein electrode 30,32 is respectively provided with In the both sides of breach 330 or homonymy (Figure 13 does not shows), stripes 342 at least constitutes an abutment wall of this breach 330.One light-emitting diodes Die is to coupling with this support 62 by breach 330, and the connection wire of this light-emitting diode chip for backlight unit is electrical with electrode 30,32 Connect, make this light-emitting diode chip for backlight unit can be driven by the circuit pattern on support 62 and load bearing seat and a power supply electric property coupling Dynamic.Wherein breach 330 size need to make light-emitting diode chip for backlight unit in the face of propping up not less than a main exiting surface of light-emitting diode chip for backlight unit The light that goes out in frame 62 direction is not covered by support 62.Junction between support 62 and load bearing seat 5 can be a movable design, so that Between support 62 and load bearing seat 5, angle can optionally be adjusted.
Refer to Figure 13 and Figure 14.Figure 14 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present invention. Comparing with the embodiment of Figure 13, the light-emitting device 302 shown in Figure 14 also includes at least one support 62 having several breach 330, Wherein these several breach 330 are respectively arranged at the both sides of support 62, make stripes 342 at least while constitute this several breach One abutment wall of 330.Several breach 330 of several light-emitting diode chip for backlight unit 310 and this are correspondingly arranged, and each light-emitting diodes tube core Conductive pattern or the connection electrode (not shown) of sheet 310 are correspondingly arranged with electrode 30 and electrode 32 and electrical connection respectively.This The light-emitting device 302 of embodiment may further include several supports 62, is each provided with the support of light-emitting diode chip for backlight unit 310 Between 62 and load bearing seat 5, angle can the most each be adjusted, in other words, at least part of support 62 and load bearing seat 5 it Between angle can be the most different to reach required illumination effect, but be not limited thereto.Can in same supports or not the most yet The LED chip arranging different emission wavelength range with support is closed, and the color effect making light-emitting device is more rich.
In order to improve brightness and improve illumination effect, the light-emitting device of another embodiment of the present invention is by several transparent bases The light-emitting diode chip for backlight unit that plate is formed is arranged in as, on the load bearing seat of above-described embodiment or other load carriers, now may be used simultaneously Adopting the form symmetrically or non-symmetrically arranged to arrange, multiple transparency carriers are namely formed by preferably asymmetrical arrangement Light-emitting diode chip for backlight unit is arranged on load carrier with the form that point symmetry or line are symmetrical.Refer to Figure 15 A, Figure 15 B, Figure 15 C With Figure 15 D, the light-emitting device of each embodiment arranges several light-emitting diodes tube cores on various difform load carriers 60 Sheet, and allow the light that of integrated illuminating device 11 can uniform (light emitting diode construction province with the form that point symmetry or line are symmetrical Slightly signal), the light-out effect of these light-emitting devices 11 is done further also by the size changing the first above-mentioned angle again Adjustment and improvement.As shown in fig. 15, between light-emitting diode chip for backlight unit, press from both sides an angle of 90 degrees in point symmetry mode, now fill from luminescence Any surface putting four sides is seen the most just at least 2 light-emitting diode chip for backlight unit in light-emitting device；Light-emitting device shown in Figure 15 B Between light-emitting diode chip for backlight unit, angle is less than 90 degree；Between the light-emitting diode chip for backlight unit of the light-emitting device shown in Figure 15 D, angle is big In 90 degree.Another embodiment then sets the most centralised or decentralised for multiple light-emitting diode chip for backlight unit in asymmetric arrangement mode Put, need (not shown) reaching light-emitting device light shape when the different application.
Refer to Figure 16.Figure 16 is the generalized section of the light-emitting device of another preferred embodiment of the present invention.Such as Figure 16 Shown in, light-emitting device 301 includes light-emitting diode chip for backlight unit 310 and a support 321.Support 321 includes a breach 330, and sends out Luminous diode chip 310 is correspondingly arranged with breach 330.Wherein, the extension of the support 321 of the present embodiment can be used as pin or It is bent into connection pad needed for surface soldered, in order to fix and/or to be electrically connected at other circuit units.Due to light-emitting diode chip for backlight unit One exiting surface of 310 is arranged in breach 330, no matter so whether support 321 is light transmissive material, light-emitting device 301 all can be protected There is the multi-direction illumination effect of hexahedro luminescence.
Refer to Figure 17 A, for the light-emitting device of the one of the specific embodiment of the invention, this light-emitting device includes an elongate tubular Lamp housing 7, at least one light-emitting diode chip for backlight unit 1 and a load carrier 60, wherein light-emitting diode chip for backlight unit 1 is arranged at load carrier On 60 and remain at least partially within the space that the lamp housing 7 of elongate tubular is formed.Refer to Figure 17 B again, this embodiment includes two Individual above light-emitting diode chip for backlight unit 1 is arranged in lamp housing 7, between the first first type surface 21A of these light-emitting diode chip for backlight unit 1 be with Mode the most parallel to each other arranges.It addition, light-emitting diode chip for backlight unit 1 is at least partially disposed in the formed space of lamp housing 7, and not Being close to the inwall of lamp housing 7, preferred embodiment is to have one between light-emitting diode chip for backlight unit 1 and lamp housing 7 more than or equal to 500 microns Distance D of (μm)；But also can design and form lamp housing 7 in encapsulating mode, and make this lamp housing 7 at least partly be coated with and be directly contacted with This light-emitting diode chip for backlight unit 1.
Refer to Figure 17 C, the light-emitting device of another specific embodiment of the present invention, wherein the lamp housing 7 of this light-emitting device has Having at least one cover 71, this cover 71 can be to be printed with the space of a whole page of advertisement or other need the display device of backlight, and this The illumination that the first first type surface 21A and the second first type surface 21B of the light-emitting diode chip for backlight unit 1 of invention is provided forms the back of the body of cover 71 Light, wherein, the angular range of the second angle formed between light-emitting diode chip for backlight unit 1 and cover 71 is between 0 degree ~ 45 degree (second Angle is 0 degree in figure, therefore does not shows).In order to ensure transparency carrier and multi-direction go out light light emitting diode construction combined by Luminous energy produced by the light-emitting diode chip for backlight unit become or luminous plaque/light tiles penetrates lamp housing 7, light-emitting diode chip for backlight unit 1 uniformly Being at least partially disposed in the space that lamp housing 7 is formed, and be not the most close to the inwall of lamp housing 7, preferred embodiment is luminous Distance D more than or equal to 500 microns is had between diode chip for backlight unit 1 and lamp housing 7；But also can design and form lamp in encapsulating mode Shell 7, and make lamp housing 7 at least partly be coated with and be directly contacted with transparency carrier 2.
Refer to Figure 17 D, Figure 17 E, Figure 17 F and Figure 17 G, for another series specific embodiment of the present invention, light-emitting device Farther include spherical lamp housing 7 and a base 64.In Figure 17 D, compare with embodiment before, the luminous dress of the present embodiment Putting and also include a spherical lamp housing 7, a load bearing seat 5 is further disposed upon on a base 64, and wherein this base 64 can be conventional lights Bubble base, this lamp housing 7 can couple and be coated with light-emitting diode chip for backlight unit and load bearing seat 5 with base 64, or lamp housing 7 can directly with carry Seat 5 couples and is coated with light-emitting diode chip for backlight unit.The form of base 64 is regardless of, and can be platform or separately has carrying teat, such as Figure 17 E Shown in.In Figure 17 F, the inner side of lamp housing 7 is coated with wavelength conversion layer 4, can allow light produced by light emitting diode construction 3 extremely Rare part can be converted into the light of another wave-length coverage before leaving lamp housing 7.And in Figure 17 G, then disclose use double The lamp housing 7 of layer and the design of lamp housing 7 ', have a space S between lamp housing 7 and lamp housing 7 ', utilize lamp housing 7, lamp housing 7 ' and both Between space S light-emitting device can be made to be further change on the illumination effect such as decorative pattern and color.
Refer to the schematic diagram of the lamp bar of another preferred embodiment that Figure 18 and Figure 19, Figure 18 are the present invention, Figure 19 is this The schematic perspective view of the light-emitting device of another preferred embodiment of invention.As shown in figure 18, if the lamp bar 323 of the present embodiment includes Dry breach 330.Lamp bar 323 has a bearing of trend X, and breach 330 is along bearing of trend X spread configuration.Several are multi-direction The breach 330 of the light-emitting diode chip for backlight unit correspondence lamp bar 323 going out light arranges and forms a luminous lamp strip, but is not limited thereto. It addition, lamp bar 323 also includes that several different electrical electrodes 30 and 32 and one first connect external electrode 350A and one second even External electrode 350B.Electrode 30 and 32 is respectively arranged at both sides or the homonymy (not shown) of each breach 330.First connects external electrode 350A And second even external electrode 350B be electrically connected with and be arranged at the both sides of lamp bar 323 with each electrode 30 and 32 respectively.Such as Figure 19 institute Showing, light-emitting device 303 includes lamp bar 323 and a device frame 360 of above-described embodiment.Wherein, it is provided with light emitting diode The lamp bar 323 of chip 310 can optionally be arranged on device frame 360 by vertical, level or in the way of tiltedly putting, and lamp bar 323 can External electrode 350A and second even external electrode 350B is connected electrical with a power supply by device frame 360 by be positioned at both sides first Link, but be not limited thereto.It addition, the blooming that light-emitting device 303 also can optionally be arranged in pairs or groups applicable (such as diffusion barrier) with The illumination effect that in adjusting apparatus framework 360, light-emitting diode chip for backlight unit 310 is formed.
Refer to the schematic diagram of the light-emitting device of another preferred embodiment that Figure 20, Figure 20 are the present invention.As shown in figure 20, Light-emitting device 304 includes several light-emitting diode chip for backlight unit 310 and load bearing seats 324.Load bearing seat 324 includes several breach 330, breach 330 is with a matrix-style spread configuration, and each light-emitting diode chip for backlight unit 310 is correspondingly arranged with breach 330.This enforcement Each light-emitting diode chip for backlight unit 310 of example is similar to the aforementioned embodiment with the connected mode of breach 330, therefore repeats no more.In this reality Executing in example, load bearing seat 324 also includes the first even external electrode 350A and second even external electrode 350B, in order to other external modules It is electrically connected with.It addition, the light-emitting device 304 of the present embodiment can be used for billboard or direct type backlight module, and load bearing seat 324 is relatively Good embodiment is for having light transmitting property, but is not limited thereto.
In sum, the light-emitting diode chip for backlight unit of the present invention uses transparency carrier and goes out the light luminescence through transparency carrier Diode structure, therefore has a multi-direction illumination effect that hexahedro luminescence or omnirange are luminous etc., and can improving luminous efficiency also Improve the problem that existing light-emitting diode chip for backlight unit light type is the best.It addition, transparency carrier includes selecting from having good conduction of heat The material of characteristic, makes heat energy produced by this light emitting diode construction can dispel the heat quickly through transparency carrier.Meanwhile, this The insulating barrier of bright light-emitting diode chip for backlight unit, conductive pattern and light emitting diode construction may utilize wafer scale manufacture method system Make, cost of manufacture can be saved in a large number and there is preferably reliability.
Disclosed light-emitting diode chip for backlight unit or luminous plaque/light tiles, for by setting light emitting diode construction It is placed on transparency carrier and is formed, therefore the light-emitting diode chip for backlight unit of the present invention can be by effective and utilization the most flexibly；And Two main faces of light-emitting diode chip for backlight unit all can go out light, therefore can obtain the light extraction efficiency of maximum under minimum power supply, and There is uniform light-out effect, regardless of whether be to be applied to the fields such as bulb, fluorescent tube, billboard, all can represent its illumination effect good, low The advantage such as power consumption and uniform in light emission, is a light-emitting diode chip for backlight unit with economy and practical value really.

Claims (10)

1. a light-emitting device, it is characterised in that including:
Light-emitting diode chip for backlight unit, including:
Transparency carrier, has growth face and side；
The first light emitting diode construction being arranged on described growth face；And
Wavelength conversion layer, covers described first light emitting diode construction, but does not cover described side；And
Load bearing seat, connects described light-emitting diode chip for backlight unit, and described load bearing seat and described transparency carrier form the angle of a non-90 degree.
Light-emitting device the most according to claim 1, it is characterised in that also include second be arranged on described growth face Optical diode structure.
Light-emitting device the most according to claim 2, it is characterised in that described wavelength conversion layer seriality ground covers described the One light emitting diode construction and described second light emitting diode construction.
Light-emitting device the most according to claim 2, it is characterised in that described first light emitting diode construction and described Two light emitting diode constructions connect in a series arrangement.
Light-emitting device the most according to claim 1, it is characterised in that described wavelength conversion layer directly contacts described first Optical diode structure.
Light-emitting device the most according to claim 1, it is characterised in that described transparency carrier also includes not turned by described wavelength Change the Part I that layer covers.
Light-emitting device the most according to claim 6, it is characterised in that described light-emitting diode chip for backlight unit also includes being arranged at institute State the connection electrode on Part I.
Light-emitting device the most according to claim 1, it is characterised in that described transparency carrier also include with described growth face that This relative first type surface, described wavelength conversion layer covers described first type surface.
Light-emitting device the most according to claim 8, it is characterised in that described first light emitting diode construction sent to Small part light can be injected described transparency carrier and go out light from described first type surface.
Light-emitting device the most according to claim 1, it is characterised in that described first light emitting diode construction is sent At least partly light can be injected described transparency carrier and go out light from described side.
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