CN203948978U - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
- Publication number
- CN203948978U CN203948978U CN201420285259.0U CN201420285259U CN203948978U CN 203948978 U CN203948978 U CN 203948978U CN 201420285259 U CN201420285259 U CN 201420285259U CN 203948978 U CN203948978 U CN 203948978U
- Authority
- CN
- China
- Prior art keywords
- light
- semiconductor luminous
- bearing seat
- load bearing
- assembly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 172
- 238000010276 construction Methods 0.000 claims abstract description 92
- 230000000712 assembly Effects 0.000 claims abstract description 39
- 238000000429 assembly Methods 0.000 claims abstract description 39
- 238000007598 dipping method Methods 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims description 58
- 238000006243 chemical reaction Methods 0.000 description 26
- 238000010586 diagram Methods 0.000 description 26
- 230000006872 improvement Effects 0.000 description 22
- 238000005286 illumination Methods 0.000 description 21
- 239000000463 material Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 13
- 238000004026 adhesive bonding Methods 0.000 description 6
- 238000013459 approach Methods 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 241000209094 Oryza Species 0.000 description 2
- 235000007164 Oryza sativa Nutrition 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- CODVACFVSVNQPY-UHFFFAOYSA-N [Co].[C] Chemical compound [Co].[C] CODVACFVSVNQPY-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 235000009566 rice Nutrition 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- -1 yittrium oxide Chemical compound 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910016338 Bi—Sn Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 1
- 229910003452 thorium oxide Inorganic materials 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
Abstract
The utility model provides a kind of light-emitting device, comprising: load bearing seat, and described load bearing seat has symmetrical centre; And a plurality of semiconductor luminous assemblies, described semiconductor luminous assembly is arranged on described load bearing seat and around described symmetrical centre; Wherein, in described a plurality of semiconductor luminous assemblies, at least one semiconductor luminous assembly comprises: transparency carrier, and described transparency carrier has supporting surface and the second first type surface being oppositely arranged; And light emitting diode construction, be arranged at described supporting surface, and with the described supporting surface that at least a portion of described light emitting diode construction is not set form can be luminous the first first type surface, at least a portion light that described light emitting diode construction sends is by described transparency carrier and by described the second first type surface bright dipping.Light-emitting device of the present utility model can send polytropism light or omni-directional light, and the luminous efficiency of light-emitting device obtains corresponding lifting, and the light shape of LED illuminating device is also improved thereupon.
Description
Technical field
The utility model relates to field of semiconductor illumination, relates in particular to a kind of light-emitting device.
Background technology
The light source of only a kind of directive property that light emitting diode (light emitting diode, LED) itself sends, the light source that is not a kind of divergence form as conventional bulb.Therefore, light emitting diode can be restricted in application.For example, traditional light emitting diode cannot or be difficult to reach needed illuminating effect in the illumination application of general indoor or outdoors.In addition, it is luminous that the light-emitting device of traditional light emitting diode only can one side, has lower luminous efficiency.
Utility model content
The purpose of this utility model is to provide a kind of light-emitting device, and it is luminous that the light-emitting device that has solved traditional light emitting diode only can one side, has the technical problem of lower luminous efficiency.
In order to solve the problems of the technologies described above, a kind of light-emitting device of the present utility model, comprising:
Load bearing seat, described load bearing seat has symmetrical centre; And
A plurality of semiconductor luminous assemblies, described semiconductor luminous assembly is arranged on described load bearing seat and around described symmetrical centre;
Wherein, in described a plurality of semiconductor luminous assembly, at least one semiconductor luminous assembly comprises:
Transparency carrier, described transparency carrier has supporting surface and the second first type surface being oppositely arranged; And
Light emitting diode construction, be arranged at described supporting surface, and with the described supporting surface that at least a portion of described light emitting diode construction is not set form can be luminous the first first type surface, at least a portion light that described light emitting diode construction sends is by described transparency carrier and by described the second first type surface bright dipping.
As the further improvement of the above-mentioned light-emitting device of the utility model, in described load bearing seat and described a plurality of semiconductor luminous assembly, between at least one semiconductor luminous assembly, have the first angle, and described the first angle is between 30-150 degree.
As the further improvement of the above-mentioned light-emitting device of the utility model, in described load bearing seat and described a plurality of semiconductor luminous assembly, between at least one semiconductor luminous assembly, have the first angle, and described the first angle is between 60-90 degree.
As the further improvement of the above-mentioned light-emitting device of the utility model, in described load bearing seat and described a plurality of semiconductor luminous assembly, between at least one semiconductor luminous assembly, have the first angle, and described the first angle equals or is comparable to 60 degree.
As the further improvement of the above-mentioned light-emitting device of the utility model, in described load bearing seat and described a plurality of semiconductor luminous assembly, between at least one semiconductor luminous assembly, have the first angle, and described the first angle equals or is comparable to 80 degree.
As the further improvement of the above-mentioned light-emitting device of the utility model, in described a plurality of semiconductor luminous assemblies, at least two semiconductor luminous assemblies are arranged in non-parallel mode.
As the further improvement of the above-mentioned light-emitting device of the utility model, in described a plurality of semiconductor luminous assemblies, at least two semiconductor luminous assemblies are arranged with parallel mode.
As the further improvement of the above-mentioned light-emitting device of the utility model, in described a plurality of semiconductor luminous assemblies, the main light emission of at least one semiconductor luminous assembly faces described symmetrical centre.
Further improvement as the above-mentioned light-emitting device of the utility model, described a plurality of semiconductor luminous assembly at least comprises the first mass-sending optical assembly and the second mass-sending optical assembly, and the distance between described the first mass-sending optical assembly and described symmetrical centre is different from the distance between described the second mass-sending optical assembly and described symmetrical centre.
As the further improvement of the above-mentioned light-emitting device of the utility model, the distance between described the first mass-sending optical assembly and described symmetrical centre is between 10-13.5 millimeter.
As the further improvement of the above-mentioned light-emitting device of the utility model, the distance between described the second mass-sending optical assembly and described symmetrical centre is between 2-13.5 millimeter.
As the further improvement of the above-mentioned light-emitting device of the utility model, described a plurality of semiconductor luminous assemblies at least comprise the first mass-sending optical assembly and the second mass-sending optical assembly, and the height of described the first mass-sending optical assembly is different from the height of described the second mass-sending optical assembly.
As the further improvement of the above-mentioned light-emitting device of the utility model, described light-emitting device also comprises:
A plurality of supports, are arranged in described load bearing seat and described a plurality of semiconductor luminous assembly between at least a portion semiconductor luminous assembly.
As the further improvement of the above-mentioned light-emitting device of the utility model, the length of described a plurality of supports is between 5-20 millimeter.
Further improvement as the above-mentioned light-emitting device of the utility model, described a plurality of semiconductor luminous assembly at least comprises the first mass-sending optical assembly and the second mass-sending optical assembly, and the first angle between described the first mass-sending optical assembly and described load bearing seat is different from the first angle between described the second mass-sending optical assembly and described load bearing seat.
As the further improvement of the above-mentioned light-emitting device of the utility model, described the first mass-sending optical assembly and described the second mass-sending optical assembly are staggered in described load bearing seat.
As the further improvement of the above-mentioned light-emitting device of the utility model, described the first mass-sending optical assembly and described the second mass-sending optical assembly are staggered in described load bearing seat.
As the further improvement of the above-mentioned light-emitting device of the utility model, described the first mass-sending optical assembly and described the second mass-sending optical assembly are staggered in described load bearing seat.
As the further improvement of the above-mentioned light-emitting device of the utility model, described load bearing seat is star or wheel shape.
As the further improvement of the above-mentioned light-emitting device of the utility model, described load bearing seat comprises at least two fins, and in described a plurality of semiconductor luminous assemblies, at least one semiconductor luminous assembly is arranged at described fin.
Further improvement as the above-mentioned light-emitting device of the utility model, described load bearing seat comprises central part and extension, described extension extends described central part, and in described a plurality of semiconductor luminous assemblies, at least two semiconductor luminous assemblies are arranged at respectively described central part and described extension.
Compared with prior art, in light-emitting device of the present utility model, light emitting diode construction is fixedly arranged on transparency carrier, and transparency carrier allows the light sending from light emitting diode construction to pass through.Therefore, light-emitting device of the present utility model can send polytropism light or omni-directional light, and the luminous efficiency of light-emitting device obtains corresponding lifting, and the light shape of LED illuminating device is also improved thereupon.
Accompanying drawing explanation
Fig. 1 and Fig. 2 are the structural representation of the semiconductor luminous assembly of a preferred embodiment of the present utility model.
Fig. 3, Fig. 4 and Fig. 5 are the multi-form light emitting diode construction 3 of a preferred embodiment of the present utility model and the schematic diagram that couples of wire.
Fig. 6 and Fig. 7 are the configuration schematic diagram of the wavelength conversion layer of a preferred embodiment of the present utility model.
Fig. 8 is the generalized section of the semiconductor luminous assembly of another preferred embodiment of the present utility model.
Fig. 9 is the generalized section of the semiconductor luminous assembly of another preferred embodiment of the present utility model.
Figure 10 is the schematic perspective view of the semiconductor luminous assembly of another preferred embodiment of the present utility model.
Figure 11 is the schematic diagram of the load bearing seat of a preferred embodiment of the present utility model.
Figure 12 is the schematic diagram of the circuit board of a preferred embodiment of the present utility model.
Figure 13 is the schematic diagram of the speculum of a preferred embodiment of the present utility model.
Figure 14 is the schematic diagram of the quasi cobalt carbon diaphragm of a preferred embodiment of the present utility model.
Figure 15 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.
Figure 16 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.
Figure 17 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.
Figure 18, Figure 19 and Figure 20 be the transparency carrier of a preferred embodiment of the present utility model peg graft or gluing in the schematic diagram of load bearing seat.
Figure 21 and Figure 22 are that the transparency carrier gluing of a preferred embodiment of the present utility model is in the schematic diagram of the standoff load bearing seat of tool.
Figure 23 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.
Figure 24 is the schematic diagram of device pedestal of the light-emitting device of another preferred embodiment of the present utility model.
Figure 25 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present utility model.
Figure 26, Figure 27, Figure 28 and Figure 29 are that the transparency carrier of a preferred embodiment of the present utility model is arranged at the schematic diagram of load carrier with point symmetry or line symmetric form.
Figure 30 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.
Figure 31 and Figure 32 are the schematic diagram of the lampshade of a preferred embodiment of the present utility model.
Figure 33 is the schematic diagram of the light-emitting device of the first embodiment of the present utility model.
Figure 34 is the illumination figure of the light-emitting device shown in Figure 33.
Figure 35 is the part schematic diagram of the light-emitting device of the second embodiment of the present utility model.
Figure 36 is the side view of the light-emitting device of the second embodiment of the present utility model.
Figure 37 is the illumination figure of the light-emitting device shown in Figure 35 and Figure 36.
Figure 38 and Figure 39 are respectively the part schematic diagram of the dissimilar light-emitting device of the utility model embodiment.
Figure 40 is the illumination figure of the light-emitting device of a preferred embodiment of the present utility model.
The specific embodiment
Below with reference to the specific embodiment shown in the drawings, the utility model is described in detail.But these embodiments do not limit the utility model, the conversion in the structure that those of ordinary skill in the art makes according to these embodiments, method or function is all included in protection domain of the present utility model.
Please refer to Fig. 1 and Fig. 2, Fig. 1 and Fig. 2 are the structural representation of the semiconductor luminous assembly of a preferred embodiment of the present utility model.As shown in Figures 1 and 2, semiconductor luminous assembly 1 comprises: transparency carrier 2, supporting surface 210, the first first type surface 21A, the second first type surface 21B and at least one light emitting diode construction 3.Dull and stereotyped or laminar transparency carrier 2 itself has two main surfaces, and one of them is supporting surface 210, and the light emitting diode construction 3 with lighting function can be arranged on this supporting surface 210.The light-emitting area 34 that light emitting diode construction 3 is not covered by transparency carrier 2 and the common formation of part supporting surface 210 that light emitting diode construction 3 is not set can be luminous the first first type surface 21A.Another main surface that transparency carrier 2 is not provided with light emitting diode construction 3 is the second first type surface 21B.Vice versa for aforementioned arrangement mode, and also can light emitting diode construction 3 be all set at 2 two faces of transparency carrier.In embodiment of the present utility model, light emitting diode construction 3 can be arranged at the supporting surface 210 of transparency carrier 2, and corresponding with other light emitting diode construction 3 that is arranged at the second first type surface 21B staggered, while making light emitting diode construction 3 on each face of transparency carrier 2 luminous, light is not covered by other light emitting diode construction 3 on transparency carrier 2 another sides, luminous intensity that so can corresponding increase semiconductor luminous assembly 1.Transparency carrier 2, as the material of sapphire substrate, ceramic substrate, glass substrate, plastics or rubber substrate etc., can comprise and be selected from aluminium oxide (Al
2o
3), the material of magnesia, beryllium oxide, yittrium oxide, thorium oxide, zirconia, lead lanthanum zirconate titanate, GaAs, zinc sulphide, zinc selenide, calcirm-fluoride, magnesium fluoride, carborundum (SiC) or chemical polymerization thing etc., wherein, a preferred embodiment of the present utility model is to adopt sapphire substrate as transparency carrier 2, because sapphire substrate is substantially mono-crystalline structures, not only there is good light transmittance, and heat-sinking capability is good, can extend the life-span of semiconductor luminous assembly 1.Yet, use traditional sapphire substrate in the utility model, to have easily cracked problem, therefore the utility model is through experimental verification, transparency carrier 2 of the present utility model preferably selects thickness to be more than or equal to the sapphire substrate of 200 microns (μ m), so can reach preferably reliability, and have preferably carrying and light transmission function.In order to make semiconductor luminous assembly 1 effectively send polytropism light, for example amphicheirality or omni-directional light, semiconductor luminous assembly 1 of the present utility model has at least the better rising angle of selecting of a light emitting diode construction 3 to be greater than 180 degree.Correspondingly, the light emitting diode construction 3 being arranged on transparency carrier 2 can send toward the light of advancing away from transparency carrier 2 directions from light-emitting area 34, and light emitting diode construction 3 also can be issued to the light that small part enters transparency carrier 2.And the light that enters transparency carrier 2 is except can, from the second first type surface 21B bright dipping of transparency carrier 2, other surperficial bright dippings of part supporting surface 210 with the substrate 2 of light emitting diode construction 3 also can being never set.Semiconductor luminous assembly 1 can at least two-sided bright dipping, multi-direction bright dipping or omnirange bright dipping.In the utility model, the area of the area of the first first type surface 21A or the second first type surface 21B is the more than five times of the gross area that are arranged at a light-emitting area 34 of its lip-deep all light emitting diode constructions 3, and this is to take into account the conditions such as luminous efficiency and heat radiation and be allocation ratio preferably.
In addition, another preferred embodiment of the present utility model is that the first first type surface 21A of semiconductor luminous assembly 1 and colour temperature difference that the second first type surface 21B sends are equal to or less than 1500K, makes semiconductor luminous assembly 1 have consistent more comprehensively illumination effect.Especially, when the thickness of transparency carrier 2 as previously mentioned, and the wave-length coverage of using bright dipping is being more than or equal to 420 rice how, and/or is less than or equal to 470 how during the light emitting diode construction 3 of rice, the light transmittance of transparency carrier 2 can be more than or equal to 70%.
The utility model is not limited with above-described embodiment.Below will sequentially introduce other preferred embodiment of the present utility model, and for the ease of relatively deviation the simplified illustration of each embodiment, use in the following embodiments identical symbol to mark identical assembly, and the deviation mainly for each embodiment describes, and no longer repeating part is repeated.
Please refer to Fig. 3, Fig. 4 and Fig. 5, the utility model is luminous to carry out in order to obtain power supply, and light emitting diode construction 3 comprises the first electrode 31A and the second electrode 31B.The first electrode 31A is connected respectively wire 23A and second with the second electrode 31B and connects wire 23B electric connection with first on transparency carrier 2.Wherein, Fig. 3, Fig. 4 and Fig. 5 have disclosed respectively the coupling mode of multi-form light emitting diode construction 3 and wire.Fig. 3 is horizontal type light emitting diode construction, and its light emitting diode construction 3 is formed on the supporting surface 210 of transparency carrier 2, and the first electrode 31A and the second electrode 31B are electrically coupled to respectively first in routing mode and are connected wire 23A and are connected wire 23B with second.Fig. 4 is crystal-coated light-emitting diodes structure 3, horizontal type light emitting diode construction 3 is inverted and by the first electrode 31A and the second electrode 31B, light emitting diode construction 3 and transparency carrier 2 is coupled.The first electrode 31A and the second electrode 31B are electrically coupled to respectively first with welding or gluing mode and are connected wire 23A and are connected wire 23B with second.As shown in Figure 5, the first electrode 31A and the second electrode 31B are arranged at the not coplanar of light emitting diode construction 3, light emitting diode construction 3 arranges in upright mode, the first electrode 31A can be welded or gluing mode is connected respectively wire 23A and second and connects wire 23B and be connected with first with the second electrode 31B.
Please refer to Fig. 6 and Fig. 7, semiconductor luminous assembly 1 of the present utility model can also comprise a wavelength conversion layer 4, and wavelength conversion layer 4 is selectively arranged at the first first type surface 21A and/or the second first type surface 21B is upper, or is directly arranged on light emitting diode construction 3.Wavelength conversion layer 4 can directly contact light emitting diode construction 3, or a segment distance adjacent with light emitting diode construction 3 and directly not contacting.Wavelength conversion layer 4 contains at least one fluorescent material, and for example garnet system, sulfate system or silicate etc. are inorganic or the fluorescent material of organic material.Wavelength conversion layer 4 is in order to emit beam at least part of light emitting diode construction 3 to be converted to the light of another kind of wave-length coverage.For example, when light emitting diode construction 3 sends blue light, the convertible part blue light of wavelength conversion layer 4 is gold-tinted, and makes semiconductor luminous assembly 1 under blue light and yellow light mix, finally send white light.In addition, the light that the light source of cause the first first type surface 21A mainly directly sends from light emitting diode construction 3, and the light source of the second first type surface 21B is the light sending through transparency carrier 2 from the light of light emitting diode construction 3, therefore the light intensity (illumination) of the first first type surface 21A can be different from the light intensity (illumination) of the second first type surface 21B.Therefore, semiconductor luminous assembly 1, the first first type surface 21A of another preferred embodiment of the utility model and the fluorescent material content of the wavelength conversion layer 4 on the second first type surface 21B are corresponding configuration.Better, preferably can from 1 to 0.5 to 1 to 3 with respect to the proportion of the fluorescent material content of the wavelength conversion layer 4 at the second first type surface 21B at the fluorescent material content of the wavelength conversion layer 4 of the first first type surface 21A, or preferably can from 1 to 0.5 to 1 to 3 with respect to the proportion of the fluorescent material content of the wavelength conversion layer 4 at the first first type surface 21A at the fluorescent material content of the wavelength conversion layer 4 of the second first type surface 21B.So, the illumination of semiconductor luminous assembly 1 of the present utility model or light shape can meet different application demands, and the colour temperature difference that the first first type surface 21A of semiconductor luminous assembly 1 and the second first type surface 21B send can be controlled in and is equal to or less than 1500K, to promote wavelength conversion efficiency and the illumination effect of semiconductor luminous assembly 1.
Please refer to Fig. 8.Fig. 8 is the generalized section of the semiconductor luminous assembly of another preferred embodiment of the present utility model.As shown in Figure 8, the semiconductor luminous assembly 1 of the present embodiment comprise a transparency carrier 2, with at least one light emitting diode construction 14 of polytropism bright dipping function is provided.Transparency carrier 2 has supporting surface positioned opposite to each other 210 and the second first type surface 21B.Light emitting diode construction 14 is arranged on the supporting surface 210 of transparency carrier 2.Light emitting diode construction 14 comprises the first electrode 16 and the second electrode 18, to be electrically connected other device.The light-emitting area 34 that light emitting diode construction 14 is not covered by transparency carrier 2, with the common first first type surface 21A of formation of the part supporting surface 210 that light emitting diode construction 14 is not set.
Light emitting diode construction 14 can comprise substrate 141, n type semiconductor layer 142, active layers 143 and p type semiconductor layer 144.In this embodiment, the substrate 141 of light emitting diode construction 14 can couple by chips incorporate layer 28 and transparency carrier 2.Emitting brightness can improve by the material behavior optimization of chips incorporate layer 28.For instance, the reflectivity of chips incorporate layer 28 is preferably between the reflectivity of substrate 141 and the reflectivity of transparency carrier 2, by increasing the emitting brightness of light emitting diode construction 14.In addition, chips incorporate layer 28 can be transparent viscose or other applicable bond material.The first electrode 16 is relative with chips incorporate layer 28 with the opposite side that the second electrode 18 is arranged on light emitting diode construction 14.The first electrode 16 is electrically connected to respectively p type semiconductor layer 144 and n type semiconductor layer 142 (annexation of the second electrode 18 and n type semiconductor layer 142 is not shown in Fig. 8) with the second electrode 18.The upper surface of the first electrode 16 is identical with the level standard essence of the upper surface of the second electrode 18.The first electrode 16 and the second electrode 18 can be metal electrode, but are not limited to this.In addition, semiconductor luminous assembly 1 also comprises that the first connection wire 20, second connects wire 22 and wavelength conversion layer 4.The first connection wire 20 is connected wire 22 with second and is arranged on transparency carrier 2.The first connection wire 20 is connected wire 22 and can be plain conductor or other conductive pattern with second, but is not limited to this.The first electrode 16 and the second electrode 18 are connected respectively to first with routing or welding manner and are connected wire 20 and are connected wire 22 with second, but are not limited to this.Wavelength conversion layer 4 is arranged on transparency carrier 2 and covers light emitting diode construction 14.In addition, wavelength conversion layer 4 also can be arranged on the second first type surface 21B of transparency carrier 2.
In addition, in order to increase the amount of light that light leaves from transparency carrier 2 and to make being evenly distributed of bright dipping, the surface of transparency carrier 2 also optionally arranges nonplanar structure 12M in this embodiment.Nonplanar structure 12M can be the geometry of various protrusion or depression, such as pyramid, cone, hemisphere or triangular prism etc., and can be systematicness arrangement or randomness arrangement.In addition, the surface of transparency carrier 2 also alternative one class be set bore carbon (diamond-like carbon, DLC) film 25 to increase heat conduction and radiating effect.
Please refer to Fig. 9, the schematic diagram of the semiconductor luminous assembly that Fig. 9 is another better alternate embodiment of the present utility model.Compared to the embodiment shown in Fig. 8, in the semiconductor luminous assembly 1 of the present embodiment, the first electrode 16, the second electrode 18 and the first chips incorporate layer 28A are arranged on the identical faces of light emitting diode construction 14.The first electrode 16 and the utilization of the second electrode 18 are covered crystal type and are electrically connected on first and are connected wire 20 and are connected wire 22 with second.Wherein, first connect wire 20 is connected with second wire 22 can be respectively from the position extension generation of corresponding the first electrode 16 and the second electrode 18.The first electrode 16 and the second electrode 18 can be electrically connected on respectively first by one second chips incorporate layer 28B and be connected wire 20 and be connected wire 22 with second.The second chips incorporate layer 28B can be conductive projection, and for example gold bump or solder projection, also can be conducting resinl, elargol for example, also can be eutectic layer, for example golden tin (Au-Sn) alloy-layer or low melting point (In-Bi-Sn) alloy-layer, but be not limited to this.In this embodiment, the first chips incorporate layer 28A can be vacancy or comprises wavelength conversion layer 4.
Please refer to Figure 10, the schematic perspective view of the semiconductor luminous assembly that Figure 10 is another preferred embodiment of the present utility model.As shown in figure 10, semiconductor luminous assembly 310 of the present utility model comprises transparency carrier 2, at least light emitting diode construction 3, the first connecting electrode 311A, the second connecting electrode 311B and at least one wavelength conversion layer 4.Light emitting diode construction 3 is arranged on the supporting surface 210 of transparency carrier 2, and the first first type surface 21A that formation can be luminous.In this embodiment, the rising angle of light emitting diode construction 3 is greater than 180 degree, and at least part of light that light emitting diode construction 3 sends can be injected transparency carrier 2, and at least a portion of injecting light can be from the second first type surface 21B bright dipping of corresponding the first first type surface 21A, and inject the remainder of light from other surperficial bright dippings of transparency carrier 2, and then reach the illumination effect of the polytropism bright dipping of semiconductor luminous assembly 310.The first connecting electrode 311A and the second connecting electrode 311B are separately positioned on not homonymy or the same side (not being shown in Figure 10) of transparency carrier 2.The first connecting electrode 311A and the second connecting electrode 311B can be respectively one first of semiconductor luminous assembly 310 on transparency carrier 2 and be connected wire and be connected chip that wire extends with one second to external electrode, and therefore the first connecting electrode 311A and the second connecting electrode 311B are correspondingly electrically connected at light emitting diode construction 3.Wavelength conversion layer 4 at least covers light emitting diode construction 3 and is exposed to the first connecting electrode 311A and the second connecting electrode 311B of small part.Wavelength conversion layer 4 absorbs the light that light emitting diode construction 3 and/or transparency carrier 2 send at least partly, and convert the light of another wave-length coverage to, then with the light mixed light not absorbed by wavelength conversion layer 4, to increase the emission wavelength scope of semiconductor luminous assembly 310, improve the illumination effect of semiconductor luminous assembly 310.Because the semiconductor luminous assembly 310 of the present embodiment has the first connecting electrode 311A and the second connecting electrode 311B that is arranged at respectively transparency carrier 2, traditional light-emitting diode encapsulating procedure can omit, semiconductor luminous assembly 310 carries out combination with applicable load bearing seat after can completing alone making again, therefore can reach and promote the advantages such as load bearing seat design variation that whole fine ratio of product, simplified structure and increase coordinate.
Please refer to Figure 11, an embodiment of the present utility model is the light-emitting device 11 that uses at least one aforesaid semiconductor luminescence component.Light-emitting device 11 comprises load bearing seat 5 and aforesaid semiconductor luminous assembly.The transparency carrier 2 of semiconductor luminous assembly be except lying against this load bearing seat 5, also can stand provided thereon and be coupled to this load bearing seat 5.Between transparency carrier 2 and load bearing seat 5, there is one first angle theta
1, the first angle theta
1can be fixing or need to change according to the light shape of light-emitting device.The first angle theta
1scope preferably between 30 degree to 150 degree.
Please refer to Figure 12, the load bearing seat 5 of light-emitting device 11 of the present utility model also can comprise circuit board 6, and circuit board 6 is coupled to external power source.Circuit board 6 electric property coupling the first connection wire and second on transparency carrier 2 connects wire (not being shown in Figure 12), and is electrically connected with light emitting diode construction 3, makes external power source pass through the luminous required power supply of circuit board 6 supply light emitting diode construction 3.In other preferred embodiment of the present utility model, if without this circuit board 6 is set, light emitting diode construction 3 also can connect wire (not being shown in Figure 12) by the first connection wire and second and directly be electrically connected at load bearing seat 5, and external power source can be powered via 5 pairs of light emitting diode constructions of load bearing seat 3.
Please refer to Figure 13, light-emitting device 11 of the present utility model also can comprise speculum or filter 8, is arranged at the second first type surface 21B or the supporting surface 210 of transparency carrier 2.Speculum or filter 8 can reflect the light that penetrates at least partly this transparency carrier 2 that this light emitting diode construction 3 sends, and make part be reflected light, change by this first first type surface 21A and penetrate.Speculum 8 can comprise at least one metal level or a Bragg mirror (Bragg reflector), but not as limit.Bragg mirror can be had dielectric film institute's storehouse of different refractivity and be formed by multilayer, or is had the dielectric film of different refractivity and multiple layer metal oxide institute's storehouse and formed by multilayer.
Please refer to Figure 14, light-emitting device 11 of the present utility model also can comprise class brill carbon (diamond-like carbon, DLC) film 9, and wherein quasi cobalt carbon diaphragm 9 is arranged on the supporting surface 210 and/or the second first type surface 21B of transparency carrier 2, to increase heat conduction and radiating effect.
Please refer to Figure 15.Figure 15 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.As shown in figure 15, the light-emitting device 10 of the present embodiment comprises load bearing seat 26 and at least one aforesaid semiconductor luminous assembly.Semiconductor luminous assembly comprises transparency carrier 2 and at least one light emitting diode construction 14.Semiconductor luminous assembly can be partially submerged in load bearing seat 26.The electrode 30,32 of load bearing seat 26 is electrically connected the connection wire 20,22 of semiconductor luminous assembly.One power supply can correspondingly provide driving voltage V+ by electrode 30,32, and V-is to drive light emitting diode construction 14 L that emits beam.Light emitting diode construction 14 comprises the first electrode 16 and the second electrode 18, is electrically connected to respectively the first connection wire 20 and is connected wire 22 with second, but be not limited to this in routing mode.In addition, the beam angle of light emitting diode construction 14 is greater than 180 degree or has a plurality of light-emitting areas, makes the light-emitting device 10 can be from the first first type surface 21A and the second first type surface 21B bright dipping.Moreover because part light also can be emitted by four sidewalls of light emitting diode construction 14 and/or transparency carrier 2, light-emitting device 10 can correspondingly have the characteristic of the luminous or omnirange bright dipping of multifaceted light-emitting, six.
Semiconductor luminous assembly can also comprise wavelength conversion layer 4, is selectively arranged on light emitting diode construction 14, the first first type surface 21A or the second first type surface 21B.Wavelength conversion layer 4 can absorb at least part of light that light emitting diode construction 14 sends the light that is converted to another wave-length coverage, so that light-emitting device 10 sends specific photochromic or light that wave-length coverage is larger.For instance, when light emitting diode construction 14 produces blue lights, the blue light of part is convertible into as gold-tinted after being irradiated to wavelength conversion layer 4, and light-emitting device 10 can send the white light that become with yellow light mix by blue light.In addition, transparency carrier 2 can parallel mode or non-parallel mode directly or the non-load bearing seat 26 that is directly fixed on.For instance, by the sidewall of transparency carrier 2 is fixed on to load bearing seat 26, transparency carrier 2 can erectly be fixedly arranged on load bearing seat 26 or transparency carrier 2 can be horizontally placed on load bearing seat 26, but is not limited to this.Transparency carrier 2 preferably comprises the material of high heat-conduction coefficient, and the heat that light emitting diode construction 14 produces can correspondingly be emitted to load bearing seat 26 via transparency carrier 2, and therefore high-power light emitting diode construction can be applicable to light-emitting device of the present utility model.In addition, one of in preferred embodiment of the present utility model, under same power condition, on the transparency carrier 12 of light-emitting device of the present utility model, form the light emitting diode construction of a plurality of smaller powers, to make full use of the thermal conduction characteristic of transparency carrier 12, for example the power of each light emitting diode construction 14 of the present embodiment can be equal to or less than 0.2 watt, but not as limit.
Please refer to Figure 16.Figure 16 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.Than the light-emitting device shown in Figure 15, the light-emitting device 10 ' of the present embodiment comprises a plurality of light emitting diode constructions 14, and the light emitting diode construction 14 of at least a portion is electrically connected to each other with series system.Each light emitting diode construction 14 comprises the first electrode 16 and the second electrode 18.The first electrode 16 of one of them light emitting diode construction 14 is arranged on an outer end of series connection and is electrically connected at the first connection wire 20, and the second electrode 18 of another light emitting diode construction 14 is arranged on the other end of series connection and is electrically connected at the second connection wire 22, but is not limited to this.A plurality of light emitting diode constructions 14 can serial or parallel connection mode be electrically connected to each other.A plurality of light emitting diode constructions 14 can send identical coloured light, for example, be all blue light diode, or a plurality of light emitting diode construction 14 sends respectively different color light, to meet different application demand.Light-emitting device 10 ' of the present utility model also can send more kinds of different coloured light by wavelength conversion layer 4.
Please refer to Figure 17.Figure 17 is the schematic diagram of the light-emitting device of another preferred embodiment of the present utility model.Than the light-emitting device shown in Figure 15 and Figure 16, the light-emitting device 50 of the present embodiment also comprises a support 51, in order to connect semiconductor luminous assembly and load bearing seat 26.The transparency carrier 2 of semiconductor luminous assembly is fixed on a side of support 51 by an assembly bonding layer 52, and the opposite side of support 51 can be embedded at or insert load bearing seat 26.In addition, support 51 has elasticity and can between transparency carrier 2 and load bearing seat 26, shape have angle, and angle is between 30-150 degree.The material of support 51 can comprise and is selected from aluminium, copper, composite metal, electric wire, pottery, printed circuit board (PCB) or other applicable materials.
Please refer to Figure 18, Figure 19 and Figure 20, when the transparency carrier 2 in the utility model is arranged on load bearing seat 5, wherein a preferred embodiment can be by pegging graft or the mode of gluing is reached engaging of transparency carrier 2 and load bearing seat 5.
As shown in figure 18, in the time of on transparency carrier 2 is arranged on load bearing seat 5, transparency carrier 2 is plugged in the single slot 61 of load bearing seat 5, and makes semiconductor luminous assembly be electrically coupled to slot 61 by connecting wire.Light emitting diode construction on transparency carrier 2 (not being shown in Figure 18) is electrically coupled to power supply by load bearing seat 5, and at least part of conductive pattern on transparency carrier 2 or connection wire extend the edge that is connected to transparency carrier 2, and be integrated into golden finger structure or the electrical port with a plurality of conductive contact blades, for example electrically port can be aforesaid connecting electrode 311A and connecting electrode 311B (not being shown in Figure 18).When transparency carrier 2 is plugged in slot 61, light emitting diode construction (not being shown in Figure 18) can obtain power supply by load bearing seat 5, and transparency carrier 2 can correspondingly be fixed on the slot 61 of load bearing seat 5.
Please refer to Figure 19, Figure 19 is the structural representation that transparency carrier 2 is plugged in a plurality of slots of load bearing seat 5.In this embodiment, transparency carrier 2 has a pair of pin configuration, and the chip that one of them pin is semiconductor luminous assembly is anodal, and another pin is the chip negative pole of semiconductor luminous assembly.Two pins all have at least one conductive contact blade and using respectively as port.Accordingly, 5 of load bearing seats, there are at least two slots 61 that conform to pin inserting surface size, make transparency carrier 2 can be engaged in smoothly load bearing seat 5, and allow light emitting diode construction obtain power supply.
Please refer to Figure 20.Transparency carrier 2 is engaged in load bearing seat 5 by assembly bonding layer.In the process engaging, can do auxiliary transparency carrier 2 and the load bearing seat 5 of engaging of welding by metal materials such as gold, tin, indium, bismuth, silver.Or, also can use silica gel or the epoxy resin with electric conductivity to assist fixedly transparency carrier 2 on load bearing seat 5, to make the conductive pattern of semiconductor luminous assembly or connect wire to be correspondingly electrically connected at load bearing seat by assembly bonding layer.
Please refer to Figure 21 and Figure 22.The load bearing seat 5 of the light-emitting device 11 of the present embodiment can be a substrate, and baseplate material can comprise composition metal, electric wire, pottery or the printed circuit board (PCB) etc. that are selected from aluminium, copper, contain aluminium.The surface of load bearing seat 5 or side have at least one support 62.Support 62 is for can be with load bearing seat 5 the two mechanism's parts that are separated from each other, or integrated mechanism part.Semiconductor luminous assembly can couple with support 62 mutually by the mode of gluing, namely by assembly bonding layer 63, transparency carrier 2 is fixed on to load bearing seat 5.Between load bearing seat 5 and transparency carrier 2, there is the first angle theta as the aforementioned
1.The unsupported surface of load bearing seat 5 also can arrange semiconductor luminous assembly, to promote the illumination effect of light-emitting device 11.In addition, semiconductor luminous assembly can be by inserting mode connection bracket 62 (not being shown in Figure 21 and Figure 22) yet, namely by connector in conjunction with semiconductor luminous assembly and support (and/or support and load bearing seat), so that transparency carrier 2 is fixed on to load bearing seat 5.Because load bearing seat 5 is bent mechanism parts with support 62, therefore increased the flexibility of the utility model when application.Simultaneously also can be different photochromic by using the semiconductor luminous assembly of different emission wavelengths to be combined into, make light-emitting device 11 bright dippings there is variability to meet different demands.
Please refer to Figure 23.As shown in figure 23, the light-emitting device of the present embodiment comprises at least one semiconductor luminous assembly 1 and a load bearing seat 5.Load bearing seat 5 comprises at least one support 62 and at least one circuit pattern P.One end of the transparency carrier of semiconductor luminous assembly 1 couples mutually with support 62, to avoid or to reduce the screening effect of 62 pairs of semiconductor luminous assembly 1 bright dippings of support.The material of load bearing seat 5 can comprise be selected from aluminium, copper, containing materials such as aluminium composite metal, electric wire, pottery or printed circuit board (PCB)s.Support 62 is cut and is bent an angle (the first angle theta as shown in Figure 21 and Figure 22 from a part for load bearing seat 5
1) form.Circuit pattern P is arranged on load bearing seat 5, and circuit pattern P also has at least one group of electrical end points to be electrically connected a power supply.Circuit pattern P another some extend on support 62 to be electrically connected semiconductor luminous assembly 1, make semiconductor luminous assembly 1 be electrically connected at power supply by the circuit pattern P of load bearing seat 5.In addition, load bearing seat 5 can also comprise at least one hole H or at least one breach G, makes fixture can load bearing seat 5 be made to further structure with other assemblies according to light-emitting device application scenarios by this hole H or breach G as screw, nail or latch etc. and fills or install.Meanwhile, the setting of hole H or breach G also increases the area of dissipation of load bearing seat 5, promotes the radiating effect of light-emitting device.
Please refer to Figure 24.Figure 24 is the schematic perspective view of device pedestal of the light-emitting device of another preferred embodiment of the present utility model.As shown in figure 24, the device pedestal 322 of the present embodiment comprises a load bearing seat 5 and at least one support 62.Compared to the embodiment of Figure 23, the support 62 of the present embodiment comprises at least one strip portion 342 and a breach 330.Electrode 30,32 is arranged at respectively the both sides of breach 330, and stripes 342 at least forms an abutment wall of breach 330.Semiconductor luminous assembly of the present utility model couples with support 62 by corresponding breach 330.The connection wire system of semiconductor luminous assembly is electrically connected at electrode 30,32, makes the semiconductor luminous assembly can be by the circuit pattern on support 62 and load bearing seat 5 and a power supply electric property coupling and driven.The size of breach 330 can be not less than the main light-emitting area of semiconductor luminous assembly, and the bright dipping of semiconductor luminous assembly can not covered by support 62.Junction between support 62 and load bearing seat 5 can be a movable design, and angle between support 62 and load bearing seat 5 can optionally be adjusted.
Please refer to Figure 24 and Figure 25.Figure 25 is the schematic perspective view of the light-emitting device of another preferred embodiment of the present utility model.Than the embodiment of Figure 24, the light-emitting device 302 shown in Figure 25 also comprises at least one support 62 with a plurality of breach 330.A plurality of breach 330 are two relative edges that are arranged at respectively support 62, and stripes 342 at least forms an abutment wall of each breach 330.A plurality of semiconductor luminous assemblies 310 are and the corresponding setting of a plurality of breach 330, and the circuit pattern of each semiconductor luminous assembly 310 or connecting electrode (not being shown in Figure 25) respectively with the corresponding setting of electrode 30 and electrode 32 electrically connect.The light-emitting device 302 of the present embodiment further can comprise a plurality of supports 62, and support 62 is arranged between semiconductor luminous assembly 1 and load bearing seat 5.The length of support 62 can essence between 5.8-20 micron (μ m).Each is provided with the support 62 of semiconductor luminous assembly and the angle between load bearing seat 5 can optionally be adjusted separately.In other words, the angle between load bearing seat 5 and at least one support 62 can be different from the angle between load bearing seat 5 and other support 62, to reach required illumination effect, but not as limit.In addition, also can in same supports or different support setting, there is the combination of the semiconductor luminous assembly of different emission wavelength scopes, make the color effect of light-emitting device abundanter.
In order to improve brightness and to improve illumination effect, the light-emitting device of another preferred embodiment of the present utility model is arranged in a plurality of semiconductor luminous assemblies with transparency carrier on the load bearing seat or other load carriers such as previous embodiment simultaneously, now can adopt point symmetry or line symmetric arrays mode is arranged, a plurality of semiconductor luminous assemblies with transparency carrier are arranged on load carrier with the form of point symmetry or line symmetry.Please refer to light-emitting device 11 top views of Figure 26, Figure 27, Figure 28 and Figure 29, the light-emitting device 11 of each embodiment arranges a plurality of semiconductor luminous assemblies on various difform load carriers 60, and with the form configuration of point symmetry or line symmetry, the bright dipping that makes light-emitting device 11 of the present utility model is (light emitting diode construction omits and illustrates) evenly.The going out light effect and also can do again further adjustment and improvement by changing the size of the first above-mentioned angle of light-emitting device 11.As shown in figure 26, press from both sides an angle of 90 degrees arrange between semiconductor luminous assembly in point symmetry mode, now arbitrary from the four sides of light-emitting device 11 sees all over against at least two semiconductor luminous assemblies toward light-emitting device 11.As shown in figure 27, between the semiconductor luminous assembly of light-emitting device 11, angle is less than 90 degree.As shown in figure 28, the semiconductor luminous assembly of light-emitting device 11 is along the edge setting of load carrier 60.As shown in figure 29, between the semiconductor luminous assembly of light-emitting device, angle is greater than 90 degree.In another preferred embodiment of the present utility model (not being shown in figure), a plurality of semiconductor luminous assemblies can asymmetric arrangement mode, and at least a portion of a plurality of semiconductor luminous assemblies can be concentrated or scattering device, to reach the light shape needs of light-emitting device 11 when the different application.
Please refer to Figure 30.Figure 30 is the generalized section of the light-emitting device of another preferred embodiment of the present utility model.As shown in figure 30, light-emitting device 301 comprises semiconductor luminous assembly 310 and support 321.Support 321 comprises a breach 330, and semiconductor luminous assembly 310 setting corresponding to breach 330.In the present embodiment, the outside of support 321 also can be used as pin or is bent into the required connection pad of surface soldered, to fix and/or to be electrically connected at other circuit units.One light-emitting area of semiconductor luminous assembly 310 is arranged in breach 330, no matter whether support 321 is light transmissive material, light-emitting device 301 all can be possessed multiaspect or six luminous illumination effects.
Please refer to Figure 31, is the light-emitting device of the utility model specific embodiment.Light-emitting device comprises tubular lampshade 7, at least one semiconductor luminous assembly 1 and load carrier 60.Semiconductor luminous assembly 1 is arranged on load carrier 60, and the semiconductor luminous assembly 1 of at least a portion is positioned at the formed space of tubular lampshade 7.Refer again to the section signal of Figure 32.When a plurality of semiconductor luminous assemblies 1 are arranged within lampshade 7, between the first first type surface 21A of each semiconductor luminous assembly 1, be with mode spaced apart not parallel to each other.In addition, at least a portion of a plurality of semiconductor luminous assemblies 1 can be arranged in the formed space of lampshade 7, and is not close to the inwall of lampshade 7.In preferred embodiment, semiconductor luminous assembly 1 can equate or be greater than 500 microns (μ m) with the distance D between lampshade 7, but also can encapsulating mode form lampshade 7, and makes the lampshade 7 coated semiconductor luminous assembly 1 that is also directly contacted with at least partly.
Refer to Figure 23 and Figure 33, Figure 33 is the schematic diagram of the light-emitting device 11 of another embodiment of the utility model.One of difference of the embodiment of Figure 23 and Figure 33 is that semiconductor luminous assembly 1 quantity of Figure 33 embodiment is 3, and semiconductor luminous assembly 1 is around the symmetrical centre that is arranged at load bearing seat 5.Arbitrary luminescence component 1 of a plurality of luminescence components 1 can comprise at least one main light emission face, and it faces the symmetrical centre of load bearing seat 5.In several embodiment of the present utility model, there is the quantity that at least one main light emission face faces the semiconductor luminous assembly 1 of load bearing seat 5 symmetrical centre and can be at least two.Between corresponding semiconductor luminous assembly 1 and load bearing seat 5, at least there is first angle theta
1, and the first angle theta
1scope essence between 30-150 degree.The light-emitting device 11 of the present embodiment also can comprise a candle-type lamp cover 7, complete covering semiconductor luminous assembly 1, support 62 and load bearing seat 5.Owing to working as the first angle theta
1angle equal or approach 90 while spending, light-emitting device 11 may thereby produce inhomogeneous light, therefore in other embodiments, the first angle theta
1angle goodly equal or approach 60 degree or 80 degree, this angle can change and respective change along with semiconductor luminous assembly 1 and the spacing of lampshade 7.The illumination figure of the light-emitting device 11 of the present embodiment refers to Figure 34.
Because it is even not that the light of the light-emitting device 11 in the above-described embodiment as shown in Figure 33 and Figure 34 distributes, the utility model further proposes the embodiment of the better improvement scheme of tool.Refer to Figure 35 and Figure 36.Figure 35 is the part schematic diagram of the light-emitting device 11 of another embodiment of the utility model, and Figure 36 is the respective side of light-emitting device 11.The light-emitting device 11 of the present embodiment can comprise at least two stands 62 and at least two semiconductor luminous assemblies 1.Two supports 62 are with respect to load bearing seat 5 turnovers and not towards the symmetrical centre 5a of load bearing seat 5.Two semiconductor luminous assemblies 1 are separately positioned on corresponding support 62 and around symmetrical centre 5a.The main light emission face of luminescence component 1 can not face the symmetrical centre 5a of load bearing seat 5.Load bearing seat 5 can be star or wheel shape.Load bearing seat 5 can comprise at least two fins, and support 62 can extend from a side of fin.So, a plurality of semiconductor luminous assemblies 1 that are arranged on these supports 62 can be done to arrange more closely, the going out luminous intensity and can be enhanced of light-emitting device 11, and this is also one of advantage of the present utility model.The light-emitting device 11 of the present embodiment also can comprise candle-type lamp cover 7, complete covering semiconductor luminous assembly 1, support 62 and load bearing seat 5.Take the present embodiment as example, when the quantity of semiconductor luminous assembly 1 is three, the height of lampshade 7 can equal or be comparable to 51.39 millimeters, the bottom internal diameter of lampshade 7 can equal or be comparable to 34.92 millimeters, the spacing of support 62 and the symmetrical centre 5a of load bearing seat 5 can be between 2-3 millimeter, and the length of support 62 can be between 5-15 millimeter.As above-mentioned, a preferred embodiment system is by the first angle theta
1preferably be decided to be and equal or be comparable to 80 degree, and the length of support 62 is preferably decided to be and equals or be comparable to 13.6 millimeters.Illumination figure as shown in figure 37, the previous embodiment that the distribution of light of the light-emitting device 11 of this preferred embodiment is compared Figure 33 and Figure 34 is more even.Each semiconductor luminous assembly 1 emitted light of the present embodiment can compensate shade block, and light can be evenly distributed in the All Ranges of lampshade 7 and do not have a dark space.The utility model reintroduces the preferred embodiment that another kind can reach aforementioned illuminating effect, and it is by the first angle theta
1preferably be decided to be and equal or be comparable to 80 degree, the length of support 62 is preferably decided to be and equals or be comparable to 15 millimeters, and the spacing of the symmetrical centre 5a of support 62 and load bearing seat 5 is preferably decided to be and equals or be comparable to 2 millimeters.
In one of them embodiment of the present utility model, light-emitting device 11 can comprise at least two semiconductor luminous assemblies 1 that are arranged at load bearing seat 5, and wherein the main light emission face of at least one semiconductor luminous assembly 1 can not face the symmetrical centre of load bearing seat 5.A plurality of semiconductor luminous assemblies 1 of light-emitting device 11 wherein one of at least also can further comprise at least one main light emission face of the symmetrical centre that faces load bearing seat 5.Thus, the light that different semiconductor luminous assemblies 1 are exported can project and pass through lampshade 7 around, and compensates the shade of light-emitting device 11 of the present utility model when bright dipping.Yet in other different application aspect, at least two semiconductor luminous assemblies 1 are gone back alternative and are arranged with parallel mode or non-parallel mode.
Except aforementioned several embodiment, the utility model proposes other in addition in order to the luminous several embodiment of uniform illuminating device 11.Refer to Figure 38 to Figure 40.Figure 38 and Figure 39 are respectively according to the schematic diagram of the part of the dissimilar light-emitting device 11 of the utility model embodiment.Figure 40 is the illumination figure of one of them light-emitting device 11 of preferred embodiment in following detailed description in detail.Light-emitting device 11 as shown in Figure 25, Figure 38 or Figure 39 can comprise the load bearing seat 5 with first group of support 62 and second group of support 62, and the semiconductor luminous assembly 1 with the first mass-sending optical assembly 1a and the second mass-sending optical assembly 1b.The first mass-sending optical assembly 1a and the second mass-sending optical assembly 1b respectively correspondence are arranged on first group of support 62 and second group of support 62.First group of support 62 and second group of support 62 can be staggered in load bearing seat 5.The quantity of first group of support 62 can be identical or be different from the quantity of second group of support 62.Load bearing seat 5 can have symmetrical centre.As shown in Figure 25 or Figure 38, in an embodiment of evenly the utility model light-emitting device 11 bright dippings, the first angle theta between the first mass-sending optical assembly 1a and load bearing seat 5
1can be different from the first angle theta between the second mass-sending optical assembly 1b and load bearing seat 5
1.In another embodiment of evenly the utility model light-emitting device 11 bright dippings, the length of first group of support 62 can be different from the length of second group of support 62, with Figure 38 or Figure 39, be depicted as example, 62 to the second groups of supports of first group of support, 62 height, make the height of the first mass-sending optical assembly 1a can be different from the height of the second mass-sending optical assembly 1b.In the another embodiment of evenly the utility model light-emitting device 11 bright dippings, distance between the first group of support 62 and symmetrical centre can be different from the distance between second group of support 62 and symmetrical centre, for instance, as shown in figure 39, the distance between the first group of support 62 and symmetrical centre can be greater than the distance between second group of support 62 and symmetrical centre.
Take one of preferred embodiment of the present utility model as example, as shown in figure 38, as the first mass-sending optical assembly 1a of semiconductor luminous assembly 1 and the quantity of the second mass-sending optical assembly 1b is identical and while being all four, the diameter of load bearing seat 5 can be between 21-25 millimeter, the first angle theta between the first mass-sending optical assembly 1a and load bearing seat 5
1can be between 30-150 degree, the first angle theta between the second mass-sending optical assembly 1b and load bearing seat 5
1can be between 30-150 degree, the length of first group of support 62 can be between 10-20 millimeter, and the length of second group of support 62 can be between 12-17 millimeter.According to aforementioned, its better embodiment includes: the diameter of load bearing seat 5 is better can be identical or approach 21 millimeters, the first angle theta between the first mass-sending optical assembly 1a and load bearing seat 5
1better the first angle theta being same as between the second mass-sending optical assembly 1b and load bearing seat 5
1, and angle theta
1equal or approach 80 degree, the length of first group of support 62 is better to be equaled or approaches 15 millimeters, and the length of second group of support 62 is better to be equaled or approaches 12 millimeters.
According to one of preferred embodiment, light-emitting device 11 also can further comprise a ball-type lampshade 7, as shown in figure 39.The load bearing seat 5 of light-emitting device 11 can further comprise a central part and an extension, and extension is to extend from central part.The support 62 of distinct group can extend respectively a side of central part and a side of extension.Another preferred embodiment shown in Figure 39 of take is example, when the quantity of the semiconductor luminous assembly 1 of first group and second group is identical and equal four, the external diameter of lampshade 7 equals or is comparable to 60 millimeters, the bottom internal diameter of lampshade 7 equals or is comparable to 32 millimeters, the first angle theta between the first mass-sending optical assembly 1a and load bearing seat 5
1can be between 30-150 degree, the first angle theta between the second mass-sending optical assembly 1b and load bearing seat 5
1can be between 30-150 degree, distance between the symmetrical centre of the first group of support 62 and load bearing seat 5 can be between 10-13.5 millimeter, distance between the symmetrical centre of the second group of support 62 and load bearing seat 5 can be between 2-13.5 millimeter, the length of first group of support 62 can be between 5-16 millimeter, and the length of second group of support 62 can be between 5-20 millimeter.According to aforementioned, its better embodiment includes: the first angle theta between the first mass-sending optical assembly 1a and load bearing seat 5
1be preferably and equal or be comparable to 80 degree, the first angle theta between the second mass-sending optical assembly 1b and load bearing seat 5
1be preferably and equal or be comparable to 60 degree, the length of first group of support 62 is preferably and equals or be comparable to 15.8 millimeters, the length of second group of support 62 is preferably and equals or be comparable to 5.8 millimeters, distance between the symmetrical centre of the first group of support 62 and load bearing seat 5 is preferably and equals or be comparable to 12 millimeters, and the distance between the symmetrical centre of the second group of support 62 and load bearing seat 5 is preferably and equals or be comparable to 5 millimeters.As shown in figure 40, shade when light-emitting device 11 is luminous reduces the illumination figure of the light-emitting device 11 of this preferred embodiment, makes the luminous more even of light-emitting device 11.
In addition, from overlooking light-emitting device 11, the semiconductor luminous assembly 1 of card-type, long strip type or clavate type can be arranged on load bearing seat 5 and can form V-type, U-shaped, triangle and polygon and arrange, and its arrangement mode is all applicable to aforementioned all embodiment of the present utility model.The utility model can be applicable to the fields such as bulb, fluorescent tube, advertising billboard, and light-emitting device of the present utility model is because of the real dark tool economic benefit of the advantages such as its better illumination effect, low power consumption and bright dipping be even and practical value.
In sum, in light-emitting device of the present utility model, light emitting diode construction is fixedly arranged on transparency carrier, and transparency carrier allows the light sending from light emitting diode construction to pass through.Therefore, light-emitting device of the present utility model can send polytropism light or omni-directional light, and the luminous efficiency of light-emitting device obtains corresponding lifting, and the light shape of LED illuminating device is also improved thereupon.
Be to be understood that, although this description is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should make description as a whole, technical scheme in each embodiment also can, through appropriately combined, form other embodiment that it will be appreciated by those skilled in the art that.
Listed a series of detailed description is above only illustrating for feasibility embodiment of the present utility model; they are not in order to limit protection domain of the present utility model, all disengaging within equivalent embodiment that the utility model skill spirit does or change all should be included in protection domain of the present utility model.
Claims (21)
1. a light-emitting device, is characterized in that, comprising:
Load bearing seat, described load bearing seat has symmetrical centre; And
A plurality of semiconductor luminous assemblies, described semiconductor luminous assembly is arranged on described load bearing seat and around described symmetrical centre;
Wherein, in described a plurality of semiconductor luminous assembly, at least one semiconductor luminous assembly comprises:
Transparency carrier, described transparency carrier has supporting surface and the second first type surface being oppositely arranged; And
Light emitting diode construction, be arranged at described supporting surface, and with the described supporting surface that at least a portion of described light emitting diode construction is not set form can be luminous the first first type surface, at least a portion light that described light emitting diode construction sends is by described transparency carrier and by described the second first type surface bright dipping.
2. light-emitting device according to claim 1, is characterized in that, have the first angle, and described the first angle is between 30-150 degree in described load bearing seat and described a plurality of semiconductor luminous assembly between at least one semiconductor luminous assembly.
3. light-emitting device according to claim 1, is characterized in that, have the first angle, and described the first angle is between 60-90 degree in described load bearing seat and described a plurality of semiconductor luminous assembly between at least one semiconductor luminous assembly.
4. light-emitting device according to claim 1, is characterized in that, in described load bearing seat and described a plurality of semiconductor luminous assembly, between at least one semiconductor luminous assembly, has the first angle, and described the first angle equals or is comparable to 60 degree.
5. light-emitting device according to claim 1, is characterized in that, in described load bearing seat and described a plurality of semiconductor luminous assembly, between at least one semiconductor luminous assembly, has the first angle, and described the first angle equals or is comparable to 80 degree.
6. light-emitting device according to claim 1, is characterized in that, in described a plurality of semiconductor luminous assemblies, at least two semiconductor luminous assemblies are arranged in non-parallel mode.
7. light-emitting device according to claim 1, is characterized in that, in described a plurality of semiconductor luminous assemblies, at least two semiconductor luminous assemblies are arranged with parallel mode.
8. light-emitting device according to claim 1, is characterized in that, in described a plurality of semiconductor luminous assemblies, the main light emission of at least one semiconductor luminous assembly faces described symmetrical centre.
9. light-emitting device according to claim 1, it is characterized in that, described a plurality of semiconductor luminous assembly at least comprises the first mass-sending optical assembly and the second mass-sending optical assembly, and the distance between described the first mass-sending optical assembly and described symmetrical centre is different from the distance between described the second mass-sending optical assembly and described symmetrical centre.
10. light-emitting device according to claim 9, is characterized in that, the distance between described the first mass-sending optical assembly and described symmetrical centre is between 10-13.5 millimeter.
11. light-emitting devices according to claim 9, is characterized in that, the distance between described the second mass-sending optical assembly and described symmetrical centre is between 2-13.5 millimeter.
12. light-emitting devices according to claim 1, is characterized in that, described a plurality of semiconductor luminous assemblies at least comprise the first mass-sending optical assembly and the second mass-sending optical assembly, and the height of described the first mass-sending optical assembly is different from the height of described the second mass-sending optical assembly.
13. light-emitting devices according to claim 1, is characterized in that, described light-emitting device also comprises:
A plurality of supports, are arranged in described load bearing seat and described a plurality of semiconductor luminous assembly between at least a portion semiconductor luminous assembly.
14. light-emitting devices according to claim 13, is characterized in that, the length of described a plurality of supports is between 5-20 millimeter.
15. light-emitting devices according to claim 1, it is characterized in that, described a plurality of semiconductor luminous assembly at least comprises the first mass-sending optical assembly and the second mass-sending optical assembly, and the first angle between described the first mass-sending optical assembly and described load bearing seat is different from the first angle between described the second mass-sending optical assembly and described load bearing seat.
16. light-emitting devices according to claim 9, is characterized in that, described the first mass-sending optical assembly and described the second mass-sending optical assembly are staggered in described load bearing seat.
17. light-emitting devices according to claim 12, is characterized in that, described the first mass-sending optical assembly and described the second mass-sending optical assembly are staggered in described load bearing seat.
18. light-emitting devices according to claim 15, is characterized in that, described the first mass-sending optical assembly and described the second mass-sending optical assembly are staggered in described load bearing seat.
19. light-emitting devices according to claim 1, is characterized in that, described load bearing seat is star or wheel shape.
20. light-emitting devices according to claim 1, is characterized in that, described load bearing seat comprises at least two fins, and in described a plurality of semiconductor luminous assemblies, at least one semiconductor luminous assembly is arranged at described fin.
21. light-emitting devices according to claim 1, it is characterized in that, described load bearing seat comprises central part and extension, described extension extends described central part, and in described a plurality of semiconductor luminous assemblies, at least two semiconductor luminous assemblies are arranged at respectively described central part and described extension.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/089,708 | 2013-11-25 | ||
| US14/089,708 US9368483B2 (en) | 2012-05-29 | 2013-11-25 | Illumination device capable of decreasing shadow of lighting effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203948978U true CN203948978U (en) | 2014-11-19 |
Family
ID=51891014
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420285259.0U Expired - Lifetime CN203948978U (en) | 2013-11-25 | 2014-05-30 | Light-emitting device |
| CN201410237251.1A Pending CN104654067A (en) | 2013-11-25 | 2014-05-30 | Light-emitting device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410237251.1A Pending CN104654067A (en) | 2013-11-25 | 2014-05-30 | Light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN203948978U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104654067A (en) * | 2013-11-25 | 2015-05-27 | 璨圆光电股份有限公司 | Light-emitting device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201954332U (en) * | 2011-02-16 | 2011-08-31 | 李志成 | LED energy-saving lamp |
| CN202101025U (en) * | 2011-06-13 | 2012-01-04 | 林珍赐 | Novel LED bulb |
| CN203277380U (en) * | 2012-05-29 | 2013-11-06 | 璨圆光电股份有限公司 | Light-emitting component and light-emitting device thereof |
| CN202733581U (en) * | 2012-08-27 | 2013-02-13 | 程敬鹏 | LED bulb capable of emitting light at full angles |
| CN202972711U (en) * | 2012-12-28 | 2013-06-05 | 李敏 | Light-emitting diode (LED) lamp set and light-emitting bulb |
| CN203948978U (en) * | 2013-11-25 | 2014-11-19 | 璨圆光电股份有限公司 | Light-emitting device |
-
2014
- 2014-05-30 CN CN201420285259.0U patent/CN203948978U/en not_active Expired - Lifetime
- 2014-05-30 CN CN201410237251.1A patent/CN104654067A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104654067A (en) * | 2013-11-25 | 2015-05-27 | 璨圆光电股份有限公司 | Light-emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104654067A (en) | 2015-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20220178527A1 (en) | Light emitting apparatus | |
| CN203277380U (en) | Light-emitting component and light-emitting device thereof | |
| CN204118121U (en) | Light-emitting device | |
| CN203521459U (en) | Light-emitting assembly and light-emitting device | |
| TWI511279B (en) | Sapphire substrate configured to form light emitting diode chip providing light in multi-directions | |
| CN203948978U (en) | Light-emitting device | |
| TWI533468B (en) | Light emitting element and illumination device thereof | |
| CN204668357U (en) | Semiconductor light-emitting elements and light-emitting device thereof | |
| CN204459854U (en) | Lighting device | |
| TWI570350B (en) | Illumination device | |
| CN106169467A (en) | Light-emitting device | |
| KR20130106459A (en) | Lighting device package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20161025 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: EPISTAR Corp. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Patentee before: Formosa Epitaxy Incorporation |
|
| CX01 | Expiry of patent term |
Granted publication date: 20141119 |