TWI506759B - A light emitting element capable of emitting white light and a method of mixing the same - Google Patents
A light emitting element capable of emitting white light and a method of mixing the same Download PDFInfo
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Description
本發明係有關一種白光發光元件及其混光方法，係以二種同系列材料磊晶之特定波長磊晶發光層之發光二極體元件，搭配與其激發白光之具適量與適當波長之螢光粉之至少一封裝材料所構成白光發光元件，並藉由二種具有特定波長磊晶發光層所構成之白光發光元件在光的顏色多樣性上互補，使其提高演色性及混光效果之可發出白光之發光元件及其混光方法。The present invention relates to a white light emitting device and a light mixing method thereof, which are two kinds of light emitting diode elements of a specific wavelength epitaxial light emitting layer which are epitaxially plated with the same series of materials, and a fluorescent light with an appropriate amount and an appropriate wavelength for exciting white light. At least one encapsulating material of the powder constitutes a white light emitting element, and the white light emitting elements formed by the two kinds of epitaxial emitting layers having specific wavelengths complement each other in color diversity, thereby improving color rendering and light mixing effects. A white light emitting element and a light mixing method thereof.
按LED的化合物半導體，是利用電能直接轉化為光能的原理，在半導體內正、負極二個端子施加電壓，電流通過，利用電子與電洞結合時，剩餘能量便以光的形式釋放，依其使用的材料的不同，其能階高低使光子能量產生不同波長的光，而成為人眼所能接受到各種顏色介於380-780nm之可見光或超出此範圍之不可見光，由於LED其壽命長，更無須有idling time，所以反應速度快，加上其體積小重量輕，更可於低電壓下即可操作(2~5V)，所造成之污染低，耗電量小，發熱量少(能源效率高)，容易大量製造及適 用產業範圍廣等特性，使得白光LED為近年來光電產業的發展主軸之一；目前白光LED的應用，在照明方面，主要是供汽車內閱讀燈、裝飾燈等使用，其餘約有95%以上是供LCD背光源使用，且因發光效率與壽命問題，目前該產品主要是供小尺寸背光源使用，就應用面來看，近期白光LED市場以彩色手機之螢幕背光源及手機附數位相機之閃光燈最為看好，後續遠期來看，白光LED目標將在大尺寸LCD背光源以及全球照明光源替換市場。The compound semiconductor according to the LED is a principle that directly converts electric energy into light energy. When a voltage is applied to the positive and negative terminals of the semiconductor, the current passes, and when the electron is combined with the hole, the remaining energy is released in the form of light. The material used is different in its energy level, so that the photon energy produces light of different wavelengths, and the human eye can receive visible light of various colors ranging from 380 to 780 nm or invisible light beyond this range. There is no need for idling time, so the reaction speed is fast, and its small size and light weight can be operated at low voltage (2~5V), resulting in low pollution, low power consumption and low heat generation. High energy efficiency), easy to manufacture and suitable With the wide range of industrial characteristics, white LED is one of the main axes of the development of optoelectronic industry in recent years. At present, the application of white LED is mainly used for reading lamps and decorative lights in automobiles, and the rest is more than 95%. It is used for LCD backlights, and due to luminous efficiency and longevity problems, the product is mainly used for small-sized backlights. In terms of application, the white LED market has recently adopted color screen backlights and mobile phones with digital cameras. The flash is most optimistic. In the future, the white LED target will be replaced by a large-size LCD backlight and a global lighting source.
又一般能被人眼感為白光之混合光，係由包括二種以上不同波長之混合光，例如同時受到紅、藍、綠光者是同時受到藍與黃光的刺激，至於目前市面混光產生白光之LED(Ligh-emitting Diode)製作技術係主要有單晶粒(Chip)或多晶粒：在多晶粒方面，係使用紅、藍、綠三色之LED，將各自顏色之LED所出之光線混成白光，此種方式之優點為可視需求調整所需要之光色，而該混光產生白光之LED則係將紅、綠、藍三種顏色(紅藍綠RGB)波長LED來形成白光LED照明，此種方式所產生的白光色彩飽和度最佳，演色性佳，但是由於紅光LED(AlGaInP磷化鋁銦鎵)與藍、綠光LED(AlInGaN氮化銦鎵)材料結構相差很大，除了波長配合配比要 能配出白色外，光強度亦要有適當的配比，因此在混光實施上有著相當之困難度，另外使用電壓(Vf)與光衰減程度、溫度特性及使用壽命都不同，需要三組回饋電路來控制所使用之三種LED形成白光，因此混光機構設計與控制電路設計相對複雜很多，並導致混合之白光光色隨時間產生變化，嚴重影響到系統的成本(增加)與其穩定性。Generally, it can be perceived by the human eye as a mixed light of white light, which is composed of mixed light of two or more different wavelengths. For example, those who are simultaneously subjected to red, blue, and green light are simultaneously stimulated by blue and yellow light, and the current market is mixed light. LED-emitting LEDs (Ligh-emitting Diode) technology mainly consists of single-chip (Chip) or multi-grain: in the case of multi-grain, LEDs of red, blue and green are used, and LEDs of respective colors are used. The light is mixed into white light. The advantage of this method is that the light color required for the visual adjustment can be adjusted, and the LED that combines the light to produce white light is red, green and blue (red, blue, green and RGB) wavelength LEDs to form white light. LED illumination, the white color produced by this method has the best color saturation and good color rendering, but the structure of the red LED (AlGaInP phosphide) is different from that of the blue and green LED (AlInGaN). Large, in addition to the wavelength matching ratio It can be equipped with white, and the light intensity must have an appropriate ratio. Therefore, it has considerable difficulty in the implementation of light mixing. In addition, the voltage (Vf) is different from the degree of light attenuation, temperature characteristics and service life. Three groups are required. The feedback circuit controls the three LEDs used to form white light. Therefore, the design of the light mixing mechanism and the control circuit design are relatively complicated, and the mixed white light color changes with time, which seriously affects the cost (increased) and stability of the system.
在單晶粒型方面，目前已商品化之白光LED所使用的製作技術主要有三：In terms of single-grain type, there are three main manufacturing techniques used for commercial white LEDs:
1.藍光LED配合黃色螢光粉：所使用的螢光粉主要為釔鋁石榴石結構之YAG螢光粉，粉體發出之黃光與未被吸收之藍光混合即可產生白光；由於單色藍光LED加上黃色螢光材料所形成的白光LED，其色彩飽和度(color saturation)較差，演色性(Ra)不佳，被照物體較不鮮艷，尤其是紅色較不清楚，不利人眼長期使用。1. Blue LED with yellow phosphor: The fluorescent powder used is mainly YAG phosphor of yttrium aluminum garnet structure, and the yellow light emitted by the powder is mixed with the unabsorbed blue light to produce white light; The white LED formed by the blue LED and the yellow fluorescent material has poor color saturation, poor color rendering (Ra), and the object to be illuminated is less vivid, especially the red color is unclear, which is unfavorable for the human eye. use.
2.藍光LED配合紅色與綠色螢光粉：所使用的螢光粉主要以含硫之螢光粉為主，螢光粉體發出之紅、綠光與未被吸收之藍光混合產生白光，然此種白光其色彩飽和度較佳且演色性較好，但螢光粉比例調配與量產調整適當色溫之白光不易，螢光粉均勻性控制也不易，不容易大量生產。2. Blue LED with red and green phosphor: The phosphor used is mainly composed of sulfur-containing phosphor, and the red and green light emitted by the phosphor powder is mixed with the unabsorbed blue light to produce white light. Such white light has better color saturation and good color rendering, but the proportion of fluorescent powder blending and mass production is not easy to adjust the white light of appropriate color temperature, and the control of uniformity of fluorescent powder is not easy, and it is not easy to mass produce.
3.紫外光LED配合紅色、藍色和綠色三色螢光粉：利用LED所產生之紫外光同時激發三種或三種以上可分別發出紅、藍、綠光之螢光粉，粉體發出三色光再混合成白光；該使用紫外光LED晶圓及配合一具有紅色、綠色、藍色三顏色混合之螢光粉所組合構成白光，雖使用紫外光UV-LED激發RGB螢光粉，控制電路較容易，但是UV-LED發光效率較低，Epoxy受到UV長期照射會變黃變質問題，影響到整體系統的發光效率，無法達到節能省碳的要求。3. Ultraviolet light LED with red, blue and green three-color fluorescent powder: use the ultraviolet light generated by LED to simultaneously excite three or more kinds of fluorescent powder which can respectively emit red, blue and green light, and the powder emits three-color light. Remixing into white light; the ultraviolet light LED wafer is combined with a phosphor powder having a mixture of red, green and blue colors to form white light. Although ultraviolet light UV-LED is used to excite RGB fluorescent powder, the control circuit is compared. It is easy, but the UV-LED has low luminous efficiency. Epoxy is subject to yellowing and long-term exposure to UV, which affects the luminous efficiency of the overall system and cannot meet the requirements of energy saving and carbon saving.
進者，先前雖有人發明諸多有關產生白光LED，然實際上係為無法達成演色性及混光效果極佳之白光，究其原因同樣係結構上無法有效克服及突破長期存在之問題，發明人茲列舉數例如后：如：美國專利第6,765,237號專利案，係在單顆磊晶片上方直接塗佈黃色螢光層，再以環氧樹脂(Epoxy)加以罩覆封裝以構成單一顆LED，所運用之發光技術為磊晶片依電光轉換效應發出單波長的藍光，照射螢光層使化學結構的電子能量從基態轉換到激發態產生黃色螢光，與藍光混為接近白色的光源。In addition, although some people have previously invented many kinds of white LEDs, they are actually unable to achieve white light with excellent color rendering and light mixing effects. The reason is also structurally unable to effectively overcome and break through long-standing problems. Inventors For example, U.S. Patent No. 6,765,237, which is directly coated with a yellow phosphor layer on top of a single epitaxial wafer, and then encapsulated with epoxy resin (Epoxy) to form a single LED. The illuminating technology is used to emit a single-wavelength blue light according to the electro-optical conversion effect of the epitaxial wafer. The illuminating layer of the fluorescent layer converts the electron energy of the chemical structure from the ground state to the excited state to generate yellow fluorescence, and is mixed with the blue light to be a white light source.
如：美國專利第5,998,925號所揭示之係利用之混光式LED是將GaN晶片和釔鋁石榴石(YAG)封裝在一起做成。GaN晶片發藍光(λ p=400~530nm， Wd=30nm)，高溫燒結製成的含Ce3+的YAG螢光粉受此藍光激發後發出黃色光發射，峰值550nm。藍光LED基片安裝在碗形反射腔中，覆蓋以混有YAG的樹脂薄層，約200-500nm。LED晶片發出的藍光一部分被YAG螢光粉吸收，另一部分藍光與YAG螢光粉發出的黃光混合，可以得到接近白光。For example, the light-mixing LEDs disclosed in U.S. Patent No. 5,998,925 are made by encapsulating a GaN wafer and yttrium aluminum garnet (YAG). GaN wafer emits blue light (λ p=400~530nm, Wd=30nm), the Ce3+-containing YAG phosphor powder prepared by high-temperature sintering is excited by the blue light to emit yellow light with a peak of 550 nm. The blue LED substrate is mounted in a bowl-shaped reflective cavity covered with a thin layer of resin mixed with YAG, about 200-500 nm. A part of the blue light emitted by the LED chip is absorbed by the YAG phosphor powder, and the other part of the blue light is mixed with the yellow light emitted by the YAG phosphor powder to obtain near white light.
如：中華民國專利公告編號385063之『新白光LED』，係由一紫外光LED晶圓及配合一具有紅色、綠色、藍色三顏色混合之螢光粉所組合構成，其特徵點為由紫外光LED晶圓產生紫外光，來激發塗或鍍在其表面或周圍之含有紅色、綠色、藍色三顏色混合之螢光粉，使產生白色光者。其中螢光粉可與透明膠混合後，與紫外光晶圓包裝成小粒狀結構，再用透明膠封裝成較大粒狀LED之結構。For example, the “New White LED” of the Republic of China Patent No. 385063 is composed of an ultraviolet LED wafer and a combination of red, green and blue phosphors. The characteristic point is UV. The light LED wafer generates ultraviolet light to excite the phosphor powder containing the red, green and blue mixed colors coated or plated on or around the surface to produce white light. The phosphor powder can be mixed with the transparent glue, and then packaged into a small granular structure with the ultraviolet wafer, and then encapsulated into a structure of a large granular LED with a transparent plastic.
如：日亞公司(NICHIA)於中華民國專利公開公告號200520262中亦提出一種發光裝置，其包含放出在近紫外光區域至可見光區域具有主發光峰波長之光之發光元件及螢光體。該發光裝置包含具有直接轉變型發光中心，或藉由發光元件直接激發之2種以上之螢光體，然而，此類產品的主要缺點在於紫外光LED的發光效率低，Epoxy受到UV長期照射會變黃遮蔽LED所發之光等問題。For example, a light-emitting device including a light-emitting element that emits light having a wavelength of a main light-emitting peak in a near-ultraviolet region to a visible light region, and a phosphor are also proposed in the Japanese Patent Publication No. 200520262. The illuminating device comprises two or more kinds of phosphors having a direct conversion type illuminating center or directly excited by a illuminating element. However, the main disadvantage of such products is that the illuminating efficiency of the ultraviolet illuminating LED is low, and Epoxy is exposed to long-term UV irradiation. Yellowing shields the light emitted by the LED and other issues.
雖然，日亞公司(NICHIA)於中華民國專利證號156177中提出一種面狀發光裝置，藉由一半導體發光元件(如藍光LED)及光致發光螢光體所發出光形成混色光，其中半導體發光元件為In之氮化合物，螢光體為二種以上的石榴石系氧化物，因此可產生二種以上螢光。然而，此類產品控制混光效果二種螢光粉調配與分佈不易控制，量產不易。Although NIUIA Corporation (NICHIA) proposed a planar light-emitting device in the Republic of China Patent No. 156177, a light-emitting light is formed by a semiconductor light-emitting element (such as a blue LED) and a photoluminescence phosphor, wherein the semiconductor Since the light-emitting element is a nitrogen compound of In, and the phosphor is two or more kinds of garnet-based oxides, two or more kinds of fluorescent light can be generated. However, such products control the light mixing effect. The two kinds of phosphor powders are not easy to control the distribution and distribution, and the mass production is not easy.
因此，本發明之發明人以此點為考量進行設計，終成一可藉由二種具有磊晶且能發出二種特定波長光，二種LED晶片波長相差30nm以上，為藍光與藍綠光，且均為AlInGaN氮化鋁銦鎵材料系列之發光二極體元件，在其上設有至少各一可激發白光之適量與適當波長螢光粉之封裝材料以構成白光偏藍至白光偏黃或白光偏綠至白光偏紅之兩組以上白光之發光元件，並藉該二組白光發光元件組合排列於系統或模組內，以形成在光的顏色多樣性上互補之多種顏色光混合成具有提高演色性及混光效果之白光，使其製程簡單、成本低、控制容易、良率高之可發光出白光之發光元件及其混光方法。Therefore, the inventors of the present invention have designed this point in consideration of the fact that two kinds of LEDs having epitaxial crystals and emitting two specific wavelengths can be emitted, and the wavelengths of the two kinds of LED chips differ by more than 30 nm, which is blue light and blue-green light. And all of the LED components of the AlInGaN aluminum indium gallium nitride material series, and at least one encapsulating material of an appropriate amount of fluorescent powder capable of exciting white light is formed thereon to constitute white light blue to white light yellow Or two or more white light emitting elements that are white to greenish to white and reddish, and are arranged in a system or a module by the combination of the two sets of white light emitting elements to form a plurality of colors of light complementary to the color diversity of the light. The white light with improved color rendering and light mixing effect, which is simple in process, low in cost, easy to control, and high in yield, can emit white light and its light mixing method.
為解決上述現有技術不足之處，本發明之主要目 的在於提供一種可發出白光之發光元件及其混光方法，其可發出白光之發光元件係藉由二種發光二極體元件於磊晶基板上磊晶能發出二種特定波長光，二種LED晶片波長相差30nm以上，波長為藍光與藍綠光，且均為AlInGaN氮化鋁銦鎵之同系列材料，並於其上設有能與發光二極體元件光源激發形成白光之適量與適當之至少一具螢光粉之封裝材料，以形成白光偏藍至白光偏黃及白光偏綠至白光偏紅之二組白光發光元件者；而其可發出白光之混光方法，係藉由二種具有特定波長設於磊晶基板上之磊晶發光層之發光二極體元件及可發出與其搭配互補之具螢光粉之至少一封裝材料以構成兩組白光發光元件組合排列於系統及模組內，以形成具有提高演色性及飽合度佳之由多種顏色光相混合白光者。In order to solve the above deficiencies of the prior art, the main object of the present invention The invention provides a light-emitting element capable of emitting white light and a light-mixing method thereof, wherein the light-emitting element capable of emitting white light emits two kinds of specific wavelength light by epitaxial deposition on the epitaxial substrate by two kinds of light-emitting diode elements, two kinds LED chips have wavelengths of more than 30 nm, wavelengths of blue and blue-green, and are all of the same series of AlInGaN aluminum nitride and indium gallium, and are provided with an appropriate amount of light that can be excited by the light source of the light-emitting diode element to form white light. At least one phosphor powder encapsulating material to form two groups of white light emitting elements of white light bluish to white light yellowish white and white light greenish to white light reddish; and the white light mixing method thereof can be performed by two a light emitting diode element having an epitaxial light emitting layer with a specific wavelength set on an epitaxial substrate and at least one encapsulating material capable of emitting a phosphor powder complementary thereto to form two sets of white light emitting elements arranged in a system and a mode Within the group, a person who has a mixture of white light of a plurality of colors with improved color rendering and saturation is formed.
本發明之次一目的，在於提供一種可發出白光之發光元件及其混光方法，其磊晶發光層材料特性相當接近、製程簡單、成本低，電壓、電流控制容易、良率高。A second object of the present invention is to provide a light-emitting element capable of emitting white light and a light-mixing method thereof, wherein the epitaxial light-emitting layer has relatively close material properties, simple process, low cost, easy voltage and current control, and high yield.
較佳者，本發明其磊晶發光層係為氮化鎵銦(InGaN)。Preferably, the epitaxial light-emitting layer of the present invention is indium gallium nitride (InGaN).
更進一步，本發明其磊晶發光層係為氮化鋁銦鎵(AlGaInN)。Furthermore, the epitaxial light-emitting layer of the present invention is aluminum indium gallium nitride (AlGaInN).
較佳者，本發明其封裝材料係為矽膠。Preferably, the encapsulating material of the present invention is silicone.
較佳者，本發明其封裝材料係為環氧樹脂(Epoxy)。Preferably, the encapsulating material of the present invention is an epoxy resin (Epoxy).
較佳者，本發明其磊晶基板係為藍寶石(Sapphire)。Preferably, the epitaxial substrate of the present invention is sapphire.
較佳者，本發明其磊晶基板係為無圖形化藍寶石基板(NSS，Non-patterned Sapphire Substrate)。Preferably, the epitaxial substrate of the present invention is a non-patterned Sapphire Substrate (NSS).
較佳者，本發明其磊晶基板係為圖形化藍寶石基板(PSS，Patterned Sapphire Substrate)。Preferably, the epitaxial substrate of the present invention is a patterned sapphire substrate (PSS, Pattern Sapphire Substrate).
更進一步，本發明其磊晶基板背面設有布拉格反射層(DBR，Distributed Bragg Reflectors)。Furthermore, in the present invention, a Bragg reflection layer (DBR, Distributed Bragg Reflectors) is provided on the back surface of the epitaxial substrate.
較佳者，本發明其磊晶基板係可為SiC(碳化矽)。Preferably, the epitaxial substrate of the present invention may be SiC (tantalum carbide).
較佳者，本發明其磊晶基板係可為Si(矽)。Preferably, the epitaxial substrate of the present invention may be Si.
較佳者，本發明其封裝材料之螢光粉係為黃色(藍光發光二極體)。Preferably, the phosphor powder of the encapsulating material of the present invention is yellow (blue light emitting diode).
較佳者，本發明其封裝材料之螢光粉係為紅色(藍綠光發光二極體)。Preferably, the phosphor powder of the encapsulating material of the present invention is red (blue-green light emitting diode).
更進一步，本發明之封裝材料之螢光粉係可為兩層或兩層以上。Furthermore, the phosphor powder of the encapsulating material of the present invention may be two or more layers.
較佳者，本發明其發光元件係可為LED LAMP燈結構。Preferably, the light-emitting element of the present invention may be an LED LAMP lamp structure.
較佳者，本發明其發光元件係可為塑料無引線晶片(PLCC，Plastic Leadless Chip Carrier)結構。Preferably, the light-emitting element of the present invention may be a plastic leadless chip (PLCC) structure.
較佳者，本發明其發光元件係可為表面黏著形成貼片式元件(SMD，Surface Mount Device)結構。Preferably, the light-emitting element of the present invention may be a surface mount to form a SMD (Surface Mount Device) structure.
較佳者，本發明其發光元件係為直接將螢光粉塗佈在LED晶片上，再做透明層(例如：SiO2 或Si3 N4 )保護，只將電極露出打線到支架或基座，而不再做封裝。Preferably, the light-emitting component of the present invention directly coats the phosphor powder on the LED wafer, and then protects the transparent layer (for example, SiO 2 or Si 3 N 4 ), and only exposes the electrode to the bracket or the base. And no longer do the packaging.
較佳者，本發明其發光二極體元件之固晶膠之膠體係選自由銀膠、可以導熱之絕緣膠、金屬粉末膠、鑽石粉膠、石墨粉膠及共晶金屬(Eutectic)所組成之一群組其中之一種膠體。Preferably, the glue system of the solid-state adhesive of the light-emitting diode element of the invention is selected from the group consisting of silver glue, heat conductive insulating glue, metal powder glue, diamond powder glue, graphite powder glue and eutectic metal (Eutectic). One of the groups is one of the colloids.
為達上述之目的，本發明係提供一種可發出白光之發光元件及其混光方法，其發光元件係包括有：二種發光二極體元件，二種LED晶片波長相差30nm以上，波長為藍光與藍綠光，且均為AlInGaN氮化鋁銦鎵之同系列材料的磊晶發光層，亦即兩種特定波長之LED發光二極體元件；至少一封裝材料，係封裝於該至少二種發光二極體元件上，該封裝材料於其內含有適當波長並與發光二極體元件之光源互補激發形成白光之適量螢光粉者。In order to achieve the above object, the present invention provides a light-emitting element capable of emitting white light and a light-mixing method thereof, the light-emitting element comprising: two kinds of light-emitting diode elements, the two kinds of LED chips having a wavelength difference of more than 30 nm and a wavelength of blue light An epitaxial light-emitting layer of the same series of materials as blue-green light and AlInGaN aluminum indium gallium nitride, that is, LED light-emitting diode elements of two specific wavelengths; at least one packaging material is encapsulated in the at least two kinds On the light-emitting diode element, the package material contains a suitable amount of phosphor powder in the appropriate wavelength and complementary to the light source of the light-emitting diode element to form a suitable amount of white light.
而藉此設計，利用封裝材料螢光粉吸收發光二極體元件光源而發射出之特定波長範圍之另一光源，並與該發光元件之光源混合，而組成一組LED白光偏藍至白光偏黃，另一組LED白光偏綠至白光偏紅之白光之發光元件。In this way, another light source of a specific wavelength range emitted by the fluorescent material of the light-emitting diode component is absorbed by the fluorescent material of the package material, and mixed with the light source of the light-emitting element to form a group of LED white light blue to white light. Yellow, another group of LED white light green to white light red light white light elements.
至於，本發明其發光二極體元件，進一步包括有：至少一支架，係作為電性連接接腳；固晶膠，係選擇性設於支架上；一磊晶基板，係設於固晶膠上，並於其上設有可發出特定波長範圍之磊晶；一磊晶發光層，係設於磊晶基板上，該磊晶發光層，進一步包括有：一n型氮化鎵、一多量子井雷射層、一p型氮化鎵；透明電極，係分別設於磊晶發光層P型氮化鎵及n型氮化鎵上；一晶粒p電極，係設於磊晶發光層P型氮化鎵或透明電極上；一晶粒n電極，係設於n型氮化鎵或透明電極上；接點，係分別設於晶粒p電極與晶粒n電極 上；打線，係分別與晶粒n極及晶粒p電極上之接點與支架連接；依照本發明一較佳實施例，上述之可發出白光之發光元件及其混光方法，更至少包括兩組本發明之白光發光元件相互搭配排列於模組或系統中。The LED component of the present invention further includes: at least one bracket as an electrical connection pin; a solid crystal glue selectively disposed on the bracket; and an epitaxial substrate disposed on the solid crystal glue And an epitaxial layer on the epitaxial substrate, the epitaxial luminescent layer further comprising: an n-type gallium nitride, a plurality of epitaxial layers a quantum well laser layer, a p-type gallium nitride; a transparent electrode, respectively disposed on the epitaxial light-emitting layer P-type gallium nitride and n-type gallium nitride; a crystal grain p-electrode is disposed on the epitaxial light-emitting layer P-type gallium nitride or transparent electrode; a grain n-electrode is disposed on the n-type gallium nitride or the transparent electrode; the contacts are respectively disposed on the crystal grain p-electrode and the crystal grain n-electrode Connecting the wires to the n-pole of the die and the contacts on the p-electrode of the die are respectively connected to the bracket; in accordance with a preferred embodiment of the present invention, the light-emitting component capable of emitting white light and the method of mixing the light thereof, at least The two sets of white light-emitting elements of the present invention are arranged in a module or system.
而本發明另一較佳實施例，其兩組以上之本發明具有特定波長之磊晶發光層之發光元件相互搭配排列於模組或系統中之排列方式，可以交互排列或各一排排列並聯或其他數目排組合而成。In another preferred embodiment of the present invention, two or more sets of the light-emitting elements of the present invention having a specific wavelength of the epitaxial light-emitting layer are arranged in a module or a system, and may be arranged alternately or in parallel in each row. Or a combination of other numbers.
為達上述之目的，本發明係提供一種可發出白光之發光元件及其混光方法，其混光方法係：由二種具有相同系列特定波長具磊晶發光層之發光二極體及至少一具互補顏色螢光粉之封裝材料搭配所產生白光之發光元件於模組或系統中，形成多種顏色光(例如：藍、藍綠、綠、黃、橘、紅等之至少四色所組成)相混合成提高高演色性及混光效果之白光。In order to achieve the above object, the present invention provides a light-emitting element capable of emitting white light and a light-mixing method thereof, wherein the light-mixing method is: two kinds of light-emitting diodes having the same series of specific wavelengths with an epitaxial light-emitting layer and at least one The encapsulating material with complementary color phosphor powder is combined with the white light emitting component in the module or system to form a plurality of color lights (for example, at least four colors of blue, blue green, green, yellow, orange, red, etc.) The light is mixed into a white light that improves high color rendering and light mixing.
為利 貴審查員瞭解本發明之發明特徵、內容與優點及其所能達成之功效，茲將本發明配合附圖，並 以實施例之表達形式詳細說明如下，而於文中所使用之圖式，其主旨僅為示意及輔助說明書之用，未必為本發明實施後之真實比例與精準配置，故不應就所附之圖式的比例與配置關係侷限本發明於實際實施上的專利範圍，合先敘明。In order to facilitate the reviewer's understanding of the features, aspects and advantages of the invention and the effects thereof, the present invention will be The embodiments are described in detail below, and the drawings used in the text are for illustrative purposes only and are not intended to be a true proportion and precise configuration after the implementation of the present invention, and therefore should not be attached thereto. Limitation of the ratio and configuration of the schema The scope of patents of the present invention in actual implementation is described in the first place.
請參閱第一圖所示，係為本發明之結構組合剖面圖，本發明之可發出白光之發光元件及其混光方法，其中之可發出白光之發光元件於一較佳之實施例中，包括有：二種發光二極體元件100、至少一封裝材料16。Referring to the first embodiment, which is a structural combination sectional view of the present invention, a white light emitting device and a light mixing method thereof, wherein a white light emitting device can be emitted in a preferred embodiment, including There are two light emitting diode elements 100 and at least one encapsulating material 16.
前述之發光二極體元件100，由二種LED晶片係由磊晶基板3上磊晶可發出波長相差30nm以上之藍光與藍綠光，且均為AlInGaN氮化鋁銦鎵之同系列材料的磊晶發光層200，於本實施例該磊晶基板3之材料係為藍寶石(Sapphire)，但並不以此限制本發明，其亦可為碳化矽(SiC)、矽(Si)或其他任何之材料，都屬於本發明的保護範圍，進而提供可發出特定波長範圍之磊晶發光層200成長於上；又該由藍寶石(Sapphire)材料構成之磊晶基板3為使其具有較佳之光電特性，於本發明其可為無圖形化藍寶石基板(NSS，Non-patterned Sapphire Substrate)或者亦可為圖形化藍寶石基板(PSS，Patterned Sapphire Substrate)，都屬於本發明的保護範圍；更進一步，為使該磊晶基板3具有較大之反射率於該磊晶基板3背面設有布拉格反射層30(DBR，Distributed Bragg Reflectors)，另為達成具有製程簡單、所使用之電壓及電流相同、成本低、控制容易、良率高等特性，本發明於磊晶基板3上長晶係採同系列材料之磊晶發光層200，於本實施例該磊晶發光層200係為能發出二種波長之同系列材料，於本實施例其可為氮化鋁銦鎵AlGaInN或氮化鎵銦(InGaN)，但並不以此限制本發明，舉凡能有發出具有二種波長相差30nm以上之藍光與藍綠光，甚至能發出紫光至綠光範圍間之任何系列材料的磊晶發光層200，都屬本發明的保護範圍。The above-mentioned light-emitting diode element 100 is made of two kinds of LED chips, and the epitaxial substrate 3 is epitaxially emitted to emit blue light and blue-green light having a wavelength difference of more than 30 nm, and both are AlInGaN aluminum indium gallium nitride series materials. The epitaxial light-emitting layer 200 is made of sapphire in the present embodiment, but the invention is not limited thereto. It may also be tantalum carbide (SiC), germanium (Si) or any other. The material belongs to the protection scope of the present invention, and further provides an epitaxial light-emitting layer 200 capable of emitting a specific wavelength range, and the epitaxial substrate 3 composed of a sapphire material has better photoelectric characteristics. In the present invention, it may be a non-patterned sapphire substrate (NSS, or a patterned sapphire substrate (PSS, Patterned Sapphire). Substrate) is a protection range of the present invention; further, in order to make the epitaxial substrate 3 have a large reflectance, a Bragg reflection layer 30 (DBR, Distributed Bragg Reflectors) is disposed on the back surface of the epitaxial substrate 3, and The invention has the advantages of simple process, the same voltage and current used, low cost, easy control, high yield, etc. The epitaxial light-emitting layer 200 of the same series of materials is obtained on the epitaxial substrate 3 in the present invention. The epitaxial luminescent layer 200 is a series of materials capable of emitting two kinds of wavelengths. In this embodiment, it may be aluminum indium gallium nitride (AlGaInN) or indium gallium nitride (InGaN), but the invention is not limited thereto. It is within the scope of the present invention to have an epitaxial luminescent layer 200 having two types of materials having wavelengths of more than 30 nm and blue and green light, and even emitting a range of violet to green light.
前述之封裝材料16，係封裝於發光二極體元件100上以構成發光元件，該封裝材料16於其內含有適當波長並與發光二極體元件100之光源互補激發形成白光之適量螢光粉160，本發明該含有適當波長之適量螢光粉160之封裝材料16，於本實施例係為環氧樹脂(Epoxy)，但並不以此限制本發明，其亦可為矽膠或其他任何材料，都屬本發明的保護範圍。再者，封裝材料16為使發光二極體元件100激發白光，其內所設之螢光粉160係有二種，一種為黃色，一種為紅色，但並不以此限制本發明，凡是能夠與發光二 極體元件100激發出白光之各種顏色螢光粉160，都屬本發明的保護範圍，又，本實施例該黃色螢光粉160係為釔-鋁-鎵/摻有鈰的釔-鋁-鎵(YAG/Y3A15G12：Ce)，至於該紅色螢光粉160於本實施例則為(硫化物/或摻有銪之硫化鍶SrS：Eu)；再者，另本發明之封裝材料16於本實施例為一層結構，但並不以此限制本發明，其亦可為一層以上之兩層結構或其他數目層數結構，藉由先有一層有螢光粉160之封裝材料16，再加上另一層封裝材料16，以形成光型與微調螢光粉160之量。The encapsulating material 16 is encapsulated on the LED component 100 to form a light-emitting component. The encapsulation material 16 contains an appropriate amount of phosphor powder in a suitable wavelength and complementary to the light source of the LED component 100 to form white light. 160. The encapsulating material 16 containing an appropriate amount of the appropriate amount of the phosphor powder 160 in the present invention is an epoxy resin (Epoxy) in this embodiment, but the invention is not limited thereto, and may be tannin or any other material. All are within the scope of protection of the present invention. Furthermore, the encapsulating material 16 is such that the light emitting diode element 100 excites white light, and the fluorescent powder 160 is provided in two types, one is yellow and the other is red, but the invention is not limited thereto. With glowing two The phosphor elements 160 of the various colors in which the polar body element 100 excites white light are all within the protection scope of the present invention. Moreover, the yellow fluorescent powder 160 in the present embodiment is a bismuth-aluminum-gallium/yttrium-doped yttrium-aluminum- Gallium (YAG/Y3A15G12:Ce), as for the red phosphor powder 160 in the present embodiment (sulfide/or antimony-doped antimony sulfide SrS:Eu); further, the encapsulation material 16 of the present invention is The embodiment is a layer structure, but is not limited thereto. It may also be a layer structure of two or more layers or other number of layers, by a layer of encapsulating material 16 having a phosphor powder 160, plus Another layer of encapsulating material 16 is formed to form the amount of light and fine tuned phosphors 160.
藉此設計，利用封裝材料16內含之螢光粉160吸收發光二極體元件100光源而發射出之特定波長範圍之另一光源，並與該發光元件之光源混合而組成白光之發光元件，另請配合參閱第二圖、第三圖所示，本發明其於適當位置設有提供發光能量之電極10、12並藉打線15與其連接下方設有凸出支架1之燈結構(LAMP)外(如第二圖所示)，亦可為下方為平面支架1之塑料無引線晶片/平面黏著形成貼片式元件結構(PLCC/SMD)(如第三圖所示)。By this design, another light source of a specific wavelength range emitted by the light-emitting powder 160 contained in the packaging material 16 is absorbed by the light source of the light-emitting diode element 100, and is mixed with the light source of the light-emitting element to form a white light-emitting element. Referring to the second and third figures, the present invention is provided with electrodes 10 and 12 for providing illuminating energy at appropriate positions, and is connected to the lamp structure (LAMP) provided with the protruding bracket 1 under the connection line 15 (As shown in the second figure), it is also possible to form a chip-type component structure (PLCC/SMD) for the plastic leadless wafer/plane adhesion of the planar support 1 (as shown in the third figure).
請配合參閱第二圖、第三圖A、第三圖B所示，係為本發明作為LED LAMP燈裝置之結構圖、為本發明PLCC/SMD結構圖(塑料無引線晶片/表面黏著形成貼 片式元件結構)、為本發明晶片具有透明層保護及螢光粉之結構圖，本發明可發出白光之發光元件，該前述之發光二極體元件100進一步包含有：至少一支架1、固晶膠2、布拉格反射層30、一磊晶基板3、一磊晶發光層200、透明電極9、11、一晶粒p電極10、一晶粒n電極12、接點14、13、打線15。其中，至少一支架1，係分別作為電性連接接腳，於第二圖中該支架1係呈凸出狀，而第三圖A與第二圖不同處，係在於第三圖A之支架1係呈平面式，而第三圖B係為晶片具有透明層保護及螢光粉之結構，但並不以此限制本發明，舉凡任何形式作為電性連接之接腳，都屬本發明的保護範圍；又本實施例中支架1數目為二，同樣並不以此限制本發明，其數目亦可為一個或其他數目，其係隨著不同磊晶基板3材料之不同及設計作改變(例如：SiC碳化矽為材料之磊晶基板3只有一支架1，另一電極在下方)；固晶膠2，係選擇性設支架1上，該固晶膠2之膠體係選自由銀膠或可以導熱之絕緣膠、金屬粉末膠、鑽石粉膠、石墨粉膠及共晶金屬(Eutectic)所組成之一群組其中之一種膠體，但並不以此限制本發明，其亦可為其他各種可以黏合之物質，都屬於本發明的保護範圍；一磊晶基板3，係設於固晶膠2上；布拉格反反射層30係 設於磊晶基板3之背面；一磊晶發光層200，係設於磊晶基板3上，其包含有一n型氮化鎵4(n-GaN)、一多量子井雷射層(MQW)5、一p型氮化鎵6(p-GaN)，而該磊晶發光層200結構係選自由單線-垂直或雙線所組成之一群組其中之一種結構，但並不以此限制本發明，其亦可為各種排列結構，都屬於本發明的保護範圍；透明電極9、11，係分別設於磊晶發光層200之P型氮化鎵6及設於n型氮化鎵4其適當位置之n型氮化鎵8上，其材料可為(ITO)(透明具導電性銦錫氧化物)或其他金屬，都屬本發明的保護範圍；一晶粒p電極10，係設於磊晶發光層200該P型氮化鎵或透明電極9上；一晶粒n電極12，係設於n型氮化鎵4或其適當位置8上之透明電極11上；接點13、14，於本實施例係分別設於晶粒p電極10及晶粒n電極12上；打線15，係分別與晶粒n電極12及晶粒p電極10上接點13、14與支架1連接，而該打線15之材料係選自由金線或銅線所組成之一群組其中之一種材料，但並不以此限制本發明，其亦可為各種導體之線材，都屬於本發明的保護範圍；如第三圖B所示之結構，係為本發明發光元件係為直接將適量螢光粉160塗佈在磊晶發光層200(即LED晶片)上，其上再做透明層1000保護，只將晶粒p電極10 及晶粒n電極12露出，並經由接點14、13將打線15電性連接到基座2000或如二圖、第三圖A所示之支架1上，而不再做封裝，又該透明層1000可為二氧化矽SiO2 或氮化矽Si3 N4 ，但並不以此限制本發，凡是可作為保護之任何電極絕緣材料，都屬本發明的保護範圍。Please refer to the second figure, the third figure A and the third figure B for the structure diagram of the invention as the LED LAMP lamp device, and the PLCC/SMD structure diagram of the invention (plastic leadless wafer/surface adhesion forming paste) The chip element structure is a structural diagram of the wafer having the transparent layer protection and the phosphor powder of the present invention. The present invention can emit a white light emitting element. The foregoing light emitting diode element 100 further includes: at least one bracket 1 and solid Crystal glue 2, Bragg reflection layer 30, an epitaxial substrate 3, an epitaxial light-emitting layer 200, transparent electrodes 9, 11, a die p electrode 10, a die n-electrode 12, contacts 14, 13, and a wire 15 . At least one bracket 1 is respectively used as an electrical connecting pin, and in the second figure, the bracket 1 is convex, and the third figure A is different from the second figure in the bracket of the third figure A. 1 is a flat type, and the third figure B is a structure in which the wafer has a transparent layer protection and a phosphor powder, but the invention is not limited thereto, and any form of the electrical connection pin is the invention. The protection range; in this embodiment, the number of the brackets 1 is two, and the invention is not limited thereto, and the number thereof may be one or other numbers, which are different according to the materials and design of the different epitaxial substrates 3 ( For example, the epitaxial substrate 3 of SiC tantalum carbide is only one support 1 and the other electrode is below; the solid crystal glue 2 is selectively provided on the support 1, and the glue system of the solid glue 2 is selected from silver glue or One kind of colloid which can be composed of one of heat conductive insulating glue, metal powder glue, diamond powder glue, graphite powder glue and eutectic metal, but it is not limited thereto, and it can also be various other kinds Substances that can be bonded are within the scope of protection of the present invention; The substrate 3 is disposed on the solid crystal adhesive 2; the Bragg anti-reflective layer 30 is disposed on the back surface of the epitaxial substrate 3; and an epitaxial light-emitting layer 200 is disposed on the epitaxial substrate 3, and includes an n-type nitride Gallium 4 (n-GaN), a multi-quantum well laser layer (MQW) 5, a p-type gallium nitride 6 (p-GaN), and the structure of the epitaxial light-emitting layer 200 is selected from a single line - vertical or double line One of the groups is composed of one of the structures, but is not limited thereto. It may also be various arrangement structures, and belongs to the protection range of the present invention; the transparent electrodes 9, 11 are respectively disposed on the epitaxial light-emitting layer. 200 P-type gallium nitride 6 and n-type gallium nitride 8 disposed at an appropriate position of n-type gallium nitride 4, the material of which may be (ITO) (transparent conductive indium tin oxide) or other metals. The protection range of the present invention is as follows: a die p electrode 10 is disposed on the epitaxial light-emitting layer 200 of the P-type gallium nitride or transparent electrode 9; a die n-electrode 12 is disposed on the n-type gallium nitride 4 or the transparent electrode 11 on the appropriate position 8; the contacts 13, 14 are respectively disposed on the die p electrode 10 and the die n electrode 12 in the embodiment; the wire 15 is respectively connected to the die n electrode 12 and grain p The contacts 13 and 14 of the electrode 10 are connected to the bracket 1 , and the material of the wire 15 is selected from one of a group consisting of a gold wire or a copper wire, but the invention is not limited thereto. The wire rods of various conductors belong to the protection range of the present invention; as shown in the third figure B, the light-emitting elements of the present invention are directly coated with an appropriate amount of phosphor powder 160 on the epitaxial light-emitting layer 200 (ie, LED). On the wafer, the transparent layer 1000 is further protected, and only the die p electrode 10 and the die n electrode 12 are exposed, and the wire 15 is electrically connected to the pedestal 2000 via the contacts 14, 13 or as shown in FIG. The holder 1 shown in FIG. 3A is not packaged, and the transparent layer 1000 may be cerium oxide SiO 2 or cerium nitride Si 3 N 4 , but this is not limited thereto, and can be used as Any electrode insulating material protected is within the scope of the present invention.
敬請配合參閱第四圖、第五圖、第六圖、第七圖所示，係為本發明特定波長之磊晶發光層所構成之白光之發光元件交互排列圖、本發明特定波長之磊晶發光層所構成白光之發光元件各一排並聯圖、本發明特定波長之磊晶發光層所構成之白光之發光元件(單一間隔)交互排列另一實施例圖、本發明特定波長之磊晶發光層所構成之白光之發光元件(兩間隔)交互排列又一實施例圖，本發明所提供之一種可發出白光之發光元件及其混光方法，其混光方法係：由至少二種具有相同系列材料特定波長具磊晶發光層200之發光二極體100，及具互補顏色螢光粉160之封裝材料16搭配所產生白光之發光元件於模組或系統中，形成類似藍、藍綠、綠、黃、橘、紅等之至少四色光所組成相混合成高演色性及混光效果極佳之白光，又本發明其各別發光元件皆為白光，可以相互搭配排列於模組或系統中，其互排列方式可以 交互排列(如第四圖所示)或各一排排列並聯使用(如第五圖所示)或為交互以各種不同間隔排列(如第六圖、第七圖所示)，另，為達到使本發明能藉由二種具有特定波長磊晶發光層200，再與其可以發出互補光之螢光粉，相互組成具有良好混光效果及高演色性之白光發光元件者，其發光元件所加適量適當波長之螢光粉160之封裝材料16，較佳者係為黃色或紅色兩種色之任意組合，原則上螢光粉160之可激發能隙小於磊晶發光層200材料之能隙(Bandgap)，例如：藍光(波長：460nm)晶片封裝結構之磊晶發光層200為發藍光之氮化鎵(GaN)及可以激發出黃光之螢光粉160，藉其相混光而成之白光；至於藍綠光(波長：495nm)晶片封裝結構之磊晶發光層200為發藍綠光之氮化鎵(GaN)及可激發出紅光之螢光粉160，藉其相混光而成之白光；由於上述經封裝好的LED發光元件由於都可以發出白光；惟前者可以選擇偏藍或偏黃，紅光會較缺乏，色溫會較偏高，而後者可以選擇偏綠或偏紅，藍光會缺乏，色溫會較偏低。由於LED發光元件漸漸在背光板與照明市場中扮演越來越重要之角色，色彩飽和度相對也越來越重要，藉由搭配上述都能產生白光之LED發光元件，以形成藍、綠、黃、紅四色光來相混合成為白光，而達到良好之混光 效果及演色性，由於兩種LED發光元件，都係以氮化鎵GaN或氮化鎵銦InGaN系列材料，因其成份相當接近，故所使用之電壓及電流均相同，完全不需要複雜的控制電路，使用上相當簡單容易，當作為背光或照明使用之個別白光發光元件封裝均形成白光LED發光元件，緃使有少數幾個LED發光元件故障，所發出光源仍為白光，只是其亮度降低而已，並不會發生如習用品而改變其顏色(即變成不是白光)之嚴重缺失，因此，本發明其長期使用縱使有部分LED發光元件故障也不會影響整體白光照明，可增加模組及系統的穩定性及使用壽命。Please refer to FIG. 4, FIG. 5, FIG. 6 and FIG. 7 for the arrangement of the light-emitting elements of the white light formed by the epitaxial light-emitting layer of the specific wavelength of the present invention, and the specific wavelength of the present invention. The light-emitting elements of the white light-emitting elements of the crystal light-emitting layer are arranged in parallel with each other, and the light-emitting elements of white light (single space) formed by the epitaxial light-emitting layer of the specific wavelength of the present invention are alternately arranged. Another embodiment is shown in the present invention. A light-emitting element (two spaces) formed by a light-emitting layer is alternately arranged in a different embodiment. The present invention provides a light-emitting element capable of emitting white light and a light-mixing method thereof. The light mixing method is: at least two types have The light-emitting diode 100 of the same series of materials having the specific wavelength of the epitaxial light-emitting layer 200 and the packaging material 16 with the complementary color fluorescent powder 160 are combined with the light-emitting elements generated by the white light in the module or system to form a blue, blue-green color. At least four colors of green, yellow, orange, red, etc. are mixed to form a white light with high color rendering and excellent light mixing effect, and the respective light emitting elements of the present invention are white light and can be arranged in line with each other. Module or system in which the mutual arrangement can Interactive arrangement (as shown in the fourth figure) or each row of parallel use (as shown in the fifth figure) or for the interaction at various intervals (as shown in the sixth and seventh figures), in addition, to achieve The present invention can be used to form a white light-emitting element having a good light-mixing effect and a high color rendering property by using two kinds of epitaxial light-emitting layers 200 having a specific wavelength and then emitting complementary light, and the light-emitting elements are added. The appropriate amount of the phosphor 16 of the appropriate wavelength of the encapsulating material 16 is preferably any combination of yellow or red. In principle, the excitable energy gap of the phosphor 160 is smaller than the energy gap of the material of the epitaxial emitting layer 200 ( Bandgap), for example, a blue light (wavelength: 460 nm) wafer package structure of the epitaxial light-emitting layer 200 is a blue-emitting gallium nitride (GaN) and a yellow light-emitting phosphor powder 160, which is mixed with white light; As for the blue-green light (wavelength: 495 nm) wafer package structure, the epitaxial light-emitting layer 200 is a blue-green light-emitting gallium nitride (GaN) and a red light-emitting phosphor powder 160, which is mixed by light. White light; since the above-mentioned packaged LED light-emitting elements can emit white light But the former may choose bluish or yellowish, red would be more lack, color temperature would be more high, while the latter can choose greenish or reddish, Blu-ray will lack, relatively low color temperature. As LED light-emitting elements are playing an increasingly important role in the backlight and lighting market, color saturation is becoming more and more important. By combining the above-mentioned LED light-emitting elements that can produce white light to form blue, green and yellow. The red four-color light is mixed to become white light, and a good mixed light is achieved. Effect and color rendering. Since the two LED light-emitting components are made of GaN GaN or InGaN InGaN series materials, the voltage and current are the same because they are quite close in composition, and no complicated control is needed. The circuit is quite simple and easy to use. When the individual white light-emitting component packages used as backlights or illuminations form white LED light-emitting components, even if a few LED light-emitting components fail, the emitted light source is still white light, but its brightness is reduced. There is no serious loss of color (ie, it is not white light), such as the use of the habit of the article. Therefore, the long-term use of the present invention, even if some LED light-emitting elements fail, does not affect the overall white light illumination, and the module and system can be added. Stability and service life.
本發明之另一實施例，係為形成兩種特定波長之白光LED發光元件：Another embodiment of the present invention is to form white light LED light-emitting elements of two specific wavelengths:
第一種白光LED發光元件(一)：係由藍光之磊晶發光層200，其波長455nm加上黃色螢光粉160之封裝材料16作混光(YAG/Y3A15O12：Ce)，其由國際照明委員會Commission Internationale de 1&apos；Eclairage發展的色座標為：CIE(x)=0.304，CIE(y)=0.335，Optical transfer Ratio=98.6%，色溫約7000K白光稍微偏藍。The first white LED light-emitting element (1) is an epitaxial light-emitting layer 200 of blue light, which is mixed with light at a wavelength of 455 nm and a yellow fluorescent powder 160 (YAG/Y3A15O12: Ce), which is used for international illumination. Commission's Commission Internationale de 1' Eclairage developed color coordinates: CIE (x) = 0.304, CIE (y) = 0.335, Optical transfer Ratio = 98.6%, color temperature of about 7000K white light slightly blue.
第二種白光LED發光元件(二)(A)：於本實施例係分別為二組，一係由藍綠光之磊晶發光層 200，其波長495nm加上紅色螢光粉160之封裝材料16作混光(硫化物/SrS：Eu)，其色座標為CIE(x)=0.302，CIE(y)=0.376，Optical transfer Ratio=92.0%，色溫約6500K白光稍微偏綠。The second white LED light-emitting element (2) (A): in this embodiment, respectively, two groups, one is an epitaxial light-emitting layer of blue-green light 200, the wavelength of 495nm plus the red fluorescent powder 160 encapsulation material 16 for light mixing (sulfide / SrS: Eu), the color coordinates of CIE (x) = 0.302, CIE (y) = 0.376, Optical transfer Ratio = 92.0%, the color temperature is about 6500K white light is slightly greenish.
而第二種白光LED發光元件(二)(B)另一組同樣係由藍綠光之磊晶發光層200，其波長495nm加上紅色螢光粉160之封裝材料16作混光(硫化物/SrS：Eu)，而其色座標及光學轉換率分別為CIE(x)=0.403，CIE(y)=0.391，Optical transfer Ratio=76.1%，色溫約3500K白光稍微偏橘；第二種白光LED發光元件(二)會加強紅色部分，與第一種白光LED發光元件搭配，會形成良好之混光效果與極佳的演色性，會有RGB-LED的效果而沒有其缺點。The second white LED light-emitting element (2) (B) is also composed of a blue-green light-emitting layer 200, which is mixed with light at a wavelength of 495 nm and a red fluorescent powder 160 (sulfide). /SrS:Eu), and its color coordinates and optical conversion rates are CIE(x)=0.403, CIE(y)=0.391, Optical transfer Ratio=76.1%, color temperature is about 3500K, white light is slightly orange; second white LED The light-emitting element (2) will strengthen the red part, and the first white light LED light-emitting element will form a good light mixing effect and excellent color rendering, and there will be an RGB-LED effect without its disadvantages.
本發明於照明背光應用時，使用上述兩種特定波長磊晶發光層200之兩組白光LED發光元件(一)、(二)在光的顏色多樣性上互補並作相互搭配於模組或系統中，使整個模組或系統提高其演色性及混光效果。又其相互排列方式可有很多種，由於每一組LED發光元件(一)(二)所使用長晶於磊晶基板3之磊晶發光層200材料為同系列，故在電壓特性及所使用之控制電路均相同，簡化其複雜性，而其作交互排列 方式敬請參閱第四圖所示之為本發明特定波長之磊晶發光層所構成之白光之發光元件交互排列圖，即將能發出白光之LED發光元件(一)、(二)交互排列組合於系統或模組內；本發明亦可以將LED發光元件(一)、(二)各一排排列並聯使用之排列方式敬請參閱第五圖所示之本發明特定波長之磊晶發光層所構成之白光之發光元件各一排並聯圖；本發明亦可將LED發光元件(一)、(二)交互間隔排列，如第五圖所示為單一間隔排列；如第六圖所示為兩間隔排列；但並不以此限制本發明，其可依需要調整該兩組LED發光元件(一)、(二)之比例，即其數目不必要為1：1，除了前述交互排列或各一排排列並聯或單一間隔排列或兩間隔排列使用外，亦可為其他各種排列方式或其他數目排列組合而成，都屬於本發明的保護範圍，也就是本發明其至少兩種能發出特定波長之長晶於磊晶基板3上之磊晶發光層200搭配適當與適量具螢光粉160之封裝材料16且能產生白光之發光元件(一)、(二)，其比例不必是1：1，因為該兩組白光之發光元件(一)、(二)與兩者的比例無關，一般組成光譜係由類似紅、橙、黃、綠、青、藍等顏色，而白光偏藍屬於高色溫之冷色及白光偏紅屬低色溫之暖色，因此，當本發明其一組LED發光元件(一)較 多時，則會產色溫較高之冷色光之顏色；當另一組LED發光元件(二)較多時，可藉其產生色溫較低之暖色光。In the illumination backlight application, the two sets of white LED light-emitting elements (1) and (2) using the above-mentioned two specific wavelength epitaxial light-emitting layers 200 are complementary in color diversity of light and matched with each other in a module or system. This allows the entire module or system to improve its color rendering and blending effects. Further, there are many ways of arranging each other. Since each set of LED light-emitting elements (1) and (2) uses the epitaxial light-emitting layer 200 of the epitaxial substrate 3 in the same series, the voltage characteristics and the used The control circuits are the same, simplifying their complexity, and they are arranged interactively. For the method, please refer to the alternating arrangement diagram of the white light-emitting elements formed by the epitaxial light-emitting layer of the specific wavelength of the present invention shown in the fourth figure, that is, the LED light-emitting elements (1) and (2) which can emit white light are alternately arranged and combined. In the system or the module, the present invention can also arrange the LED light-emitting elements (1) and (2) in a row and parallel arrangement. Please refer to the specific wavelength epitaxial light-emitting layer of the present invention shown in FIG. The light-emitting elements of the white light are connected in parallel in a row; the present invention can also arrange the LED light-emitting elements (1) and (2) alternately, as shown in the fifth figure, as a single interval arrangement; as shown in the sixth figure, the two intervals Arrangement; but the invention is not limited thereto, and the ratio of the two sets of LED light-emitting elements (1) and (2) can be adjusted as needed, that is, the number thereof is not necessarily 1:1, except for the aforementioned interactive arrangement or each row Arranged in parallel or in a single spaced arrangement or in two spaced arrangements, or in various other arrangements or other numbers, it is within the scope of the present invention, that is, at least two of the present invention can emit a specific wavelength. Crystal on the base The epitaxial luminescent layer 200 on the 3 is matched with a suitable amount of the light-emitting elements (1) and (2) of the package material 16 having the fluorescent powder 160 and capable of generating white light, and the ratio thereof is not necessarily 1:1 because the two groups of white light The light-emitting elements (1) and (2) are independent of the ratio of the two. The general composition spectrum is similar to red, orange, yellow, green, cyan, blue, etc., while the white light blue is a cool color of high color temperature and white light red. Warm color of low color temperature, therefore, when the present invention has a set of LED light-emitting elements (1) For a long time, the color of the cool color light with a higher color temperature will be produced; when another set of LED light-emitting elements (2) is more, the warm color light with a lower color temperature can be generated by the other.
藉此設計，本發明除了利用至少一封裝材料16其螢光粉160吸收具磊晶基板3之磊晶發光層200之光源而發射出之特定波長範圍之另一光源，並與該具磊晶發光層200之磊晶基板3之二種發光二極體元件100之光源混合組成白光偏藍至白光偏黃及白光偏綠至白光偏紅之兩組白光發光元件；其混光方法則藉由二種於磊晶基板3上磊晶具有相同系列材料且產生特定波長之磊晶發光層200及至少一具互補顏色螢光粉160之封裝材料16搭配產生白光之兩組發光元件排列於模組或系統中，並利用其間形成多種顏色光色(類似藍、藍綠、綠、黃、橘、紅等之至少四色所組成)相互混合，使其提高演色性及混光效果之白光，又其製程簡單、所使用之電壓及電流相同、成本低、控制容易、良率高，實符合新穎、進步性、產業上利用及突破性者。By this design, in addition to using at least one encapsulating material 16, the phosphor powder 160 absorbs another light source of a specific wavelength range emitted by the light source of the epitaxial light-emitting layer 200 having the epitaxial substrate 3, and is epitaxial with the epitaxial layer The light source of the two kinds of light emitting diode elements 100 of the epitaxial substrate 3 of the light emitting layer 200 is composed of two white light emitting elements of white light bluish to white light yellowish white and white light greenish to white light reddish; the light mixing method is by Two sets of light-emitting elements on the epitaxial substrate 3 having the same series of materials and having a specific wavelength of the epitaxial light-emitting layer 200 and at least one complementary color phosphor 160 are arranged in the module. Or in the system, and using a plurality of color light colors (composed of at least four colors of blue, blue green, green, yellow, orange, red, etc.) to be mixed with each other to improve the color rendering and the white light of the light mixing effect, The process is simple, the voltage and current used are the same, the cost is low, the control is easy, and the yield is high, which is in line with novelty, progress, industrial utilization and breakthrough.
綜觀上述所知，本發明在突破先前之製造技術和結構之困難，並且確實已達到所欲增進之功效，且也非所熟悉之已知技術和工藝者所易思及之加工過程，再者，本發明申請前都未曾公開或發表，其所具 有之新穎性、進步性、創新性，顯已符合國內、外之發明專利的申請要件，爰依法提出發明申請，懇請 貴局核准本件發明專利申請案，以勵發明，至感德便。In view of the above, the present invention overcomes the difficulties of the prior art manufacturing techniques and structures, and has indeed achieved the desired effect, and is not familiar with the known techniques and processes that are easily understood by the craftsman. , the invention has not been disclosed or published before the application, There are novelty, progress, and innovation. It has already met the requirements for domestic and foreign invention patents. If you file an invention application according to law, you are requested to approve the application for the invention patent to encourage invention.
以上所述之實施例僅係為說明本發明之技術思想及特點，其目的在使熟習此項技藝之人士能夠瞭解本發明之內容並據此實施，當不能以此限定本發明之專利範圍，即大凡依本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本發明之專利範圍內。The embodiments described above are merely illustrative of the technical spirit and the features of the present invention, and the purpose of the present invention is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention. That is, the equivalent variations or modifications made by the spirit of the present invention should still be included in the scope of the present invention.
1‧‧‧支架1‧‧‧ bracket
2‧‧‧固晶膠2‧‧‧solid glue
3‧‧‧磊晶基板3‧‧‧ epitaxial substrate
30‧‧‧布拉格反射層30‧‧‧ Bragg reflector
100‧‧‧發光二極體元件100‧‧‧Lighting diode components
200‧‧‧磊晶發光層200‧‧‧ epitaxial luminescent layer
4‧‧‧n-GaN(N型氮化鎵)4‧‧‧n-GaN (N-type gallium nitride)
5‧‧‧MQW(未含應力多量子井雷射)5‧‧‧MQW (unstressed multi-quantum well laser)
6‧‧‧p-GaN(p型氮化鎵)6‧‧‧p-GaN (p-type gallium nitride)
8‧‧‧n-GaN(n型氮化鎵)8‧‧‧n-GaN (n-type gallium nitride)
9‧‧‧透明電極9‧‧‧Transparent electrode
10‧‧‧Metal(晶粒p電極)10‧‧‧Metal (grain p-electrode)
11‧‧‧透明電極11‧‧‧Transparent electrode
12‧‧‧Metal(晶粒n電極)12‧‧‧Metal (grain n-electrode)
13、14‧‧‧接點13, 14‧‧‧Contacts
15‧‧‧打線15‧‧‧Line
16‧‧‧封裝材料16‧‧‧Packaging materials
160‧‧‧螢光粉160‧‧‧Flame powder
(一)‧‧‧發光元件(a) ‧‧‧Lighting elements
(二)‧‧‧發光元件(ii) ‧‧‧Lighting elements
1000‧‧‧透明層1000‧‧‧ transparent layer
2000‧‧‧基座2000‧‧‧Base
第一圖：係為本發明之結構組合剖面圖。The first figure is a sectional view of the structural combination of the present invention.
第二圖：係為本發明作為LED LAMP燈裝置之結構圖。The second figure is a structural diagram of the invention as an LED LAMP lamp device.
第三圖A：係為本發明PLCC/SMD結構圖(塑料無引線晶片/表面黏著形成貼片式元件結構)。Fig. 3A is a PLCC/SMD structure diagram of the present invention (plastic leadless wafer/surface adhesion forming a chip component structure).
第三圖B：為本發明晶片具有透明層保護及螢光粉之結構圖。Third Figure B is a structural diagram of a wafer having a transparent layer protection and a phosphor powder according to the present invention.
第四圖：係為本發明特定波長之磊晶發光層所構成之白光之發光元件交互排列圖。Fig. 4 is a view showing an arrangement of light-emitting elements of white light composed of an epitaxial light-emitting layer of a specific wavelength of the present invention.
第五圖：係為本發明特定波長之磊晶發光層所構成白光之發光元件各一排並聯圖。Fig. 5 is a parallel diagram of each row of light-emitting elements constituting white light of the epitaxial light-emitting layer of a specific wavelength of the present invention.
第六圖：係為本發明特定波長之磊晶發光層所構成之白光之發光元件(單一間隔)交互排列另一實施例圖。Fig. 6 is a view showing another embodiment of the arrangement of light-emitting elements (single spaces) of white light constituted by the epitaxial light-emitting layer of a specific wavelength of the present invention.
第七圖：係為本發明特定波長之磊晶發光層所構成之白光之發光元件(兩間隔)交互排列又一實施例圖。Fig. 7 is a view showing another embodiment of the arrangement of white light-emitting elements (two spaces) formed by the epitaxial light-emitting layer of a specific wavelength of the present invention.
1‧‧‧支架1‧‧‧ bracket
2‧‧‧固晶膠2‧‧‧solid glue
3‧‧‧磊晶基板3‧‧‧ epitaxial substrate
30‧‧‧布拉格反射層30‧‧‧ Bragg reflector
100‧‧‧發光二極體元件100‧‧‧Lighting diode components
200‧‧‧磊晶發光層200‧‧‧ epitaxial luminescent layer
4‧‧‧n-GaN(N型氮化鎵)4‧‧‧n-GaN (N-type gallium nitride)
5‧‧‧MQW(未含應力多量子井雷射)5‧‧‧MQW (unstressed multi-quantum well laser)
6‧‧‧p-GaN(p型氮化鎵)6‧‧‧p-GaN (p-type gallium nitride)
8‧‧‧n-GaN(n型氮化鎵)8‧‧‧n-GaN (n-type gallium nitride)
9‧‧‧透明電極9‧‧‧Transparent electrode
10‧‧‧Metal(晶粒p電極)10‧‧‧Metal (grain p-electrode)
11‧‧‧透明電極11‧‧‧Transparent electrode
12‧‧‧Metal(晶粒n電極)12‧‧‧Metal (grain n-electrode)
13、14‧‧‧接點13, 14‧‧‧Contacts
15‧‧‧打線15‧‧‧Line
16‧‧‧封裝材料16‧‧‧Packaging materials
160‧‧‧螢光粉160‧‧‧Flame powder
(一)‧‧‧發光元件(a) ‧‧‧Lighting elements
(二)‧‧‧發光元件(ii) ‧‧‧Lighting elements
1000‧‧‧透明層1000‧‧‧ transparent layer
2000‧‧‧基座2000‧‧‧Base
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| TW200525779A (en) * | 2004-01-27 | 2005-08-01 | Super Nova Optoelectronics Corp | White-like light emitting device and its manufacturing method |
| TW201013975A (en) * | 2008-09-23 | 2010-04-01 | Feng-Biao Liao | High performance three-wavelength illuminating device |
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| TW200525779A (en) * | 2004-01-27 | 2005-08-01 | Super Nova Optoelectronics Corp | White-like light emitting device and its manufacturing method |
| TW201013975A (en) * | 2008-09-23 | 2010-04-01 | Feng-Biao Liao | High performance three-wavelength illuminating device |
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