CN105318278B - Luminescence component - Google Patents
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- CN105318278B CN105318278B CN201510450634.1A CN201510450634A CN105318278B CN 105318278 B CN105318278 B CN 105318278B CN 201510450634 A CN201510450634 A CN 201510450634A CN 105318278 B CN105318278 B CN 105318278B
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- 238000004020 luminiscence type Methods 0.000 title claims abstract description 64
- 238000006243 chemical reaction Methods 0.000 claims abstract description 84
- 210000004276 hyalin Anatomy 0.000 claims description 26
- NOQGZXFMHARMLW-UHFFFAOYSA-N Daminozide Chemical group CN(C)NC(=O)CCC(O)=O NOQGZXFMHARMLW-UHFFFAOYSA-N 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 description 36
- 230000003287 optical effect Effects 0.000 description 35
- 238000010586 diagram Methods 0.000 description 26
- 230000008859 change Effects 0.000 description 16
- 238000002310 reflectometry Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
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- 230000000875 corresponding effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
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- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
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- 238000010168 coupling process Methods 0.000 description 2
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- 238000003475 lamination Methods 0.000 description 2
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/04—Refractors for light sources of lens shape
- F21V5/048—Refractors for light sources of lens shape the lens being a simple lens adapted to cooperate with a point-like source for emitting mainly in one direction and having an axis coincident with the main light transmission direction, e.g. convergent or divergent lenses, plano-concave or plano-convex lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Abstract
The present invention discloses a kind of luminescence component, has a light emitting device and a wavelength conversion layer, and light emitting device has one first upper surface and one first side surface, and wavelength conversion layer covers the first upper surface and has one second upper surface and a second side.The ratio of the distance between first upper surface and the second upper surface and the distance between first side and second side is between 1.1~1.3.
Description
Technical field
It is luminous with a light-emitting component and an optical element more particularly to one the present invention relates to a luminescence component
Component.
Background technique
Use light emitting diode (light-emitting diode；LED light emitting device) because have energy-saving and environmental protection,
Long service life and it is small in size the advantages that, just gradually replace conventional incandescent sources.
Several light-emitting components, such as lens, reflection unit and wavelength shifter can be used to change light emitting device
Optical characteristics.Lens can be used to collect or redistribute the light issued from light emitting diode.Reflector can will be sent out
The light that optical diode issues re-directs the direction of needs.Moreover, wavelength shifter, for example, fluorescent powder, pigment or
The light that light emitting diode issues can be converted into other color by quanta point material.
Summary of the invention
One luminescence component has a light emitting device and a wavelength conversion layer, and light emitting device has one first upper surface and one the
One side surface, wavelength conversion layer cover the first upper surface and have one second upper surface and a second side.First upper surface with
The ratio of the distance between second upper surface and the distance between first side and second side is between 1.1~1.3.
One luminescence component, the wavelength for connecting the second lens with one with a light emitting device, one first lens, one second lens
Conversion layer.First lens are located on light emitting device, there is one first upper surface to bend to a first direction, the second lens are located at
On first lens, there is an inner surface to bend to a second direction, first direction is different from second direction.
One luminescence component has the first light emitting device, the second light emitting device, the first light emitting device of covering and the second luminous dress
Diffusion layer, the prism layer on diffusion layer and the LCD module being located in prism layer set.Second light emitting device, with the first hair
There is a distance between electro-optical device.First light emitting device or the second light emitting device have a light field in LCD module, and the half of light field
Diameter or characteristic length are or more the distance between the first light emitting device and the second light emitting device twice.
Detailed description of the invention
Figure 1A~Fig. 1 H is the schematic diagram of light emitting device in the embodiment of the present invention；
Fig. 2A~Fig. 2 D is the optical characteristics schematic diagram of light emitting device in the embodiment of the present invention；
Fig. 3 A is the schematic diagram of luminescence component in the embodiment of the present invention；
Fig. 3 B~Fig. 3 C is the structure chart in the embodiment of the present invention；
Fig. 3 D~Fig. 3 E is the optical characteristics schematic diagram of luminescence component in the embodiment of the present invention；
Fig. 4 A~Fig. 4 B is the structure chart in the embodiment of the present invention；
Fig. 4 C~Fig. 4 F is the structure and optical characteristics schematic diagram of luminescence component in the embodiment of the present invention；
Fig. 5 A~Fig. 5 C is the schematic diagram of light emitting device in the embodiment of the present invention；
Fig. 6 A~Fig. 6 F is the schematic diagram of light emitting device in the embodiment of the present invention；
Fig. 7 A~Fig. 7 J is schematic diagram and the schematic diagram of relevant optical characteristics of luminescence component in the embodiment of the present invention；
Fig. 8 A~Fig. 8 D is the schematic diagram of luminescence component in the embodiment of the present invention；
Fig. 9 A~Fig. 9 D is the schematic diagram of luminescence component in the embodiment of the present invention；
Figure 10 A~Figure 10 D is the schematic diagram of the luminescence component of one embodiment of the invention；
Figure 11 A~Figure 11 H is the schematic diagram of the luminescence component of one embodiment of the invention and the signal of relevant optical characteristics
Figure；
Figure 12 A~Figure 12 E is the measurement equipment and the schematic diagram of relevant result of one embodiment of the invention；
Figure 13 is the schematic diagram of the luminescence component of one embodiment of the invention.
Symbol description
1000A、1000B、1000C、1000D、1000E、1000F、1000G、1000H、2000A、2000B、2000C、
2000D, 2000E, the light emitting device of 2000F, 3000,4000,5000,6000,8000
1003A, 1007A, 1007C, 1007E, 1008A, 1008C, 1008D, 1009B luminescence component
2 light emitting diodes
3 particles
4,40,42,44,46,48,50,52 wavelength conversion layer
6 hyaline layers
8 transparency covers
10 support plates
18 diffusion layers
20 prism layers
22 LCD modules
24 spectrometers
100 upper surfaces
120,122 conductor portion
140,142 side wall
160,162,164,166, the lens of 170a, 170b, 172,174,176,180,184
1740,1840 hole
1760,1762 alar part
178a, 178b aperture
180 biconvex lens
L1, L2 light
The edge E1, E2
The surface S1, S2
U, the U ' uniformity
Specific embodiment
Figure 1A shows the schematic diagram of a light emitting device 1000A in one embodiment of the invention.Light emitting device 1000A includes a hair
Optical diode 2 and a wavelength conversion layer 4 are formed directly on light emitting diode 2, and around light emitting diode 2.Shine dress
1000B is set to be formed between wavelength conversion layer 4 and light emitting diode 2 with a hyaline layer 6.Hyaline layer 6 covers light emitting diode 2
Upper surface and side surface, and laterally extend to the edge of light emitting device 1000B.Therefore, light emitting diode 2 and wavelength convert
Layer 4 is separated by hyaline layer 6.
There is light emitting device 1000C a transparency cover 8 to be formed on wavelength conversion layer 4.Light emitting device 1000D is saturating with one
8, one, the bright lid hyaline layer 6 of wavelength conversion layer 4, one sequentially stacks from top to bottom with a light emitting diode 2.Light emitting device
The wavelength conversion layer 4 of 1000D has a following table and a upper surface.The profile of lower surface is consistent with the upper surface profile of hyaline layer 6
Or it is approximate.The profile of upper surface and the upper surface profile of transparency cover 8 are consistent or close.In addition, wavelength convert dress layer 4 is upper and lower
Surface can have same or different profile.There are two parallel each other for the tool of wavelength conversion layer 4 of light emitting device 1000D
Surface (the upper surface and the lower surface).The wavelength conversion layer 4 of light emitting device 1000E is formed on hyaline layer 6, and has a following table
Face is close to hyaline layer 6.The lower surface of wavelength conversion layer 4 has a profile same or similar with the upper surface of hyaline layer 6, and
The upper surface of wavelength conversion layer 4 then has a flat profile, or is parallel to the upper of light emitting device 1000E or transparency cover 8
Surface.The wavelength conversion layer 4 of light emitting device 1000E has a lower surface and a flat upper surface, wherein lower surface substantially edge
The contour extension of light emitting diode 2.
With reference to Figure 1B and Fig. 1 D, hyaline layer 6 has a curved profile.This curved profile is in light emitting diode 2
Upper surface is raised deviously.Wavelength conversion layer 4 is formed in the curved upper surface of hyaline layer 6, therefore is had under an indent
Surface.Hyaline layer 6 is similar to the lower surface of 2 profile of light emitting diode with more a profile.With reference to Fig. 1 F, Fig. 1 G and Fig. 1 H, thoroughly
Bright layer 6 and wavelength conversion layer 4 generally have one fall U (reversed-U) shape.With reference to Fig. 1 H, transparency cover 8 also has
The shape of U.This shape for falling U has a top and a side, and wherein side is thinner than top.
Fig. 2A~Fig. 2 D shows the optical characteristics of light emitting device in the embodiment of the present invention.It is light emitting device shown by Fig. 2A
The light extraction efficiency (Light Extraction Efficiency) of 1000A~1000H.These light extraction efficiencies between 100~
140lm/W.And light emitting device 1000F has optimal smooth extraction efficiency.Be shown by Fig. 2 B light emitting device 1000A~
1000H is in the color temperature change of+90 °~-90 ° of light field.These variations are between 100~450K.Fig. 2 C~Fig. 2 D is shown with two kinds
Commensurate does not indicate the color change in each angle, and wherein Δ u ' v ' is between 0.001~0.009, and Δ y be then between 0.01~
Between 0.1.
Fig. 3 A shows a structure with the luminescence component 1003A of an embodiment in the present invention.Luminescence component 1003A has
One light emitting device 1000C is formed on the upper surface 100 of support plate 10 via conductor portion 120 and 122.Luminescence component 1003A's
Side wall 140 and 142 can be can be with Lambertian (lambert) scattering surface of scattering light, as shown in Figure 3B.Upper surface 100
It can be the surface with 90% reflectivity and 10% absorptivity, or can be with the Lambertian table of scattering light
Face, as shown in Figure 3 C.Eight luminescence components (light emitting device 1000A~1000H) shown by Fig. 3 D+90 °~-90 ° it
Between color with angulation change degree, wherein eight luminescence components have 142 kenel of different upper surfaces 100 and side wall.With reference to
Fig. 3 D, when the side wall of this structure is Lambertian scattering surface, color space provided by this structure is uniform
The difference that degree (color space uniformity) comes when being flat surface than side wall.
It is this eight light extraction efficiencies with different upper surfaces 100 and the luminescence component of side wall 140 shown by Fig. 3 E.
And each luminescence component measures under different conditions at four kinds.The first condition is that upper surface 100 dissipates for Lambertian
Reflective surface, and side wall 140 and 142 is plane.It is all Lambertian that second of condition, which is upper surface 100, side wall 140 and 142,
Scattering surface.The third condition is that upper surface 100 is a reflecting surface, and side wall 140 and 142 is plane, wherein upper surface
100 be 90% for the reflectivity of the light from light emitting diode.4th kind of condition is that upper surface 100 is reflecting surface, and side
Wall 140 and 142 is Lambertian scattering surface.According to Fig. 3 D~Fig. 3 E, luminescence component with light emitting device 1000F and
Luminescence component with light emitting device 1000B has luminous efficiency and color temperature difference greater than 130lm/W under identical condition
It is different to be lower than 0.04.
It is two structures of embodiment in the present invention shown by Fig. 4 A~Fig. 4 B.Wavelength convert in Fig. 4 A and Fig. 4 B
When the thickness of layer increases, the luminous efficiency of two structures is both increased, and the color uniformity in space also increases, and two knots
The colour temperature uniformity of structure also increases.Moreover, the thickness of wavelength conversion layer 4 increases, and has more for the structure in Fig. 4 B
It is apparent to influence.For more specifically, when the thickness of wavelength conversion layer 4 increases to 300 μm by 100 μm, the knot of Fig. 4 B
The light extraction efficiency of structure, which increases 4.89%, Δ CCT and is reduced to 128K and Δ u ' v ' from 486K, drops to 0.002 from 0.0088.
When the thickness of wavelength conversion layer 4 increases to 400 μm by 100 μm, and the luminous efficiency of the structure of Fig. 4 A increases
10.97%, Δ CCT is reduced to 289K and Δ u ' v ' from 529K and drops to 0.0055 from 0.0089.However, the structure in Fig. 4 B
Only need to increase the thickness of less wavelength conversion layer 4, it will be able to obtain the optical characteristics roughly the same with the structure of Fig. 4 A.
Fig. 4 C~Fig. 4 F show be embodiment in the present invention structure and optical characteristics.In Fig. 4 D~Fig. 4 F, abscissa
Represent optical characteristics, such as light extraction efficiency, color temperature change Δ CCT and chrominance space uniformity Δ u ' v '.And abscissa generation
Table, the width W in Fig. 4 C, between light emitting diode 2 and wavelength conversion layer 4.When height H increases to 350 μm from 50 μm, width
W increases to 350 μm from 50 μm, and light extraction efficiency increases about 7.53% from 135lm/W, as shown in Figure 4 D.As illustrated in figure 4f, color
It spends spatially uniform Δ u ' v ' and falls below 0.01 from 0.02, be about reduction of 34.8%.As shown in Figure 4 E, color temperature change Δ
CCT falls below 500K from 1100K or so.When height H is greater than 250 μm, light extraction efficiency can be obviously improved.When
Height H be 50 μm and width W for 150 μm when, chrominance space uniformity Δ u ' v ' is about 0.01.
Fig. 5 A~Fig. 5 C shows the structure chart in the embodiment of the present invention.With reference to the structure in Fig. 5 A, when height H is about
The size of 750 μm and light emitting device is about 2 × 2mm2When, it is uniform that light extraction efficiency is greater than 135lm/W, chrominance space
It is about 200K that property Δ u ' v, which is about 0.04 and color temperature change Δ CCT,.Light emitting device in Fig. 5 A is 350 μm in height H
And the size of light emitting device is about 1 × 1mm2In the case where or height H be 450 μm and light emitting device size it is big
It is approximately 1.2 × 1.2mm2In the case where, it can have better optical characteristics, such as light extraction efficiency, chrominance space uniformity
Δ u ' v ' and color temperature change Δ CCT.
With reference to the structure of Fig. 5 B, when the size that height H is 750 μm and light emitting device is about 1.8 × 1.8mm2Feelings
Under condition, chrominance space uniformity Δ u ' v is about 0.02, and color temperature change Δ CCT is about 100K.Light extraction efficiency is in height H
The size for being 750 μm and light emitting device is about 2 × 2mm2The case where when, be greater than 135lm/W.And the luminous dress in Fig. 5 B
It sets, is about 1.2 × 1.2mm in the size that height H is 350 μm and light emitting device2In the case where or height H be 450 μm
And the size of light emitting device is about 1.2 × 1.2mm2In the case where when, have a better optical characteristics, such as light extraction effect
Rate, chrominance space uniformity Δ u ' v ' and color temperature change Δ CCT.
Compared to the structure of Fig. 5 B, light emitting device in Fig. 5 C height H be the size of 350 μm and light emitting device about
It is 1.2 × 1.2mm2In the case where, height H be the size of 450 μm and light emitting device be about 1.2 × 1.2mm2In the case where,
It is about 1.4 × 1.4mm that either height H, which is the size of 750 μm and light emitting device,2In the case where, can have preferable
The optical characteristics such as light extraction efficiency, chrominance space uniformity Δ u ' v ' and color temperature change Δ CCT.Shining in Fig. 5 A~Fig. 5 C
For device under the conditions of specific dimensions and height, the light issued has preferable optical characteristics.For example, work as depth-width ratio
When HWR (HWR=H/W) is between 1.1~1.3, the light that is issued has good chrominance space uniformity Δ u ' v ',
And when depth-width ratio HWR is greater than 0.7, chrominance space uniformity Δ u ' v ' then falls in 4 MacAdam's ellipse (MacAdam
Ellipse in).
Light emitting device in Fig. 5 A~Fig. 5 C can be more arranged on as on the support plate 10 in Fig. 3 A, and these dresses that shine
The light for setting sending can be influenced by upper surface 100.For example, when the reflectivity of upper surface 100 is reduced to 90% from 100%
When, luminous efficiency reduces 18.42%, 18.13% and 20.28% respectively.In another embodiment, work as upper surface
100 be a Lambertian scattering surface, and reflectivity from 100% be reduced to 90% when, light extraction efficiency drops respectively
Low 11.56%, 12.14% and 11.93%.In another embodiment, the colour temperature of the light issued when light emitting device from
When 6500K is changed to 30000K, reduce 7.63% when light extraction efficiency is relative to colour temperature 6500K respectively,
7.58% and 6.22%.The spy for the light that structure in Fig. 1, Fig. 3 A~Fig. 3 B, Fig. 4 A~Fig. 4 C or Fig. 5 A~Fig. 5 C is issued
Size, integrally-built size, the reflectivity of upper surface 100 or the light emitting device that property can be wavelength-converted layer 4 emit beam
Color influenced.
Fig. 6 A~Fig. 6 F shows the schematic diagram of light emitting device in the embodiment of the present invention.Particle 3 is added into light emitting device
Within the wavelength conversion layer 4 of 2000A, 2000B and 2000E, be added within the hyaline layer 6 of light emitting device 2000C and 2000F,
It is also added within the transparency cover 8 of light emitting device 2000D.Particle 3 is used to promote the scattering or reflection of light.Particle 3 is not
It is transparent, and at least absorbs the light that a part is issued from light emitting diode.Pass through the addition of particle 3, light emitting device
The space chromacity uniformity of 2000A~2000F can be improved, but light extraction efficiency also reduces 35% respectively, 5%,
31%, 54%, 4% and 43%.
As shown in Fig. 3 A~Fig. 3 E, light extraction efficiency can't be significantly affected by sidewall surfaces reflectivity, no matter side wall
Surface be Lambertian scattering surface either reflectivity be 100% surface.As Figure 1A~Fig. 1 H, Fig. 4 A~Fig. 4 C,
Shown in Fig. 5 A~Fig. 5 C and Fig. 6 A~Fig. 6 F, light extraction efficiency is easier the reflectivity by the surface of support plate 10 or the dress that shines
The size set is influenced.For example, the reflectivity on the surface of support plate 10 is higher, light extraction efficiency can promote about 18%~20%.
Or setting reflecting layer can also increase by about 11~12% light extraction efficiency between light emitting device and support plate 10.Furthermore have
Between the light emitting device for having similar coloration spatial uniformity, light extraction effect can also be promoted by increasing the size of light emitting device
Rate.Such as when the size of light emitting device is 25 times of light emitting diode or is more, light extraction efficiency can be from
127lm/W increases to 138/W, that is, has increased about 8% light extraction efficiency.
In addition to this, the particle 3 in HWR or structure can also influence the light uniformity that light emitting device is issued.For example,
Chrominance space uniformity Δ u ' v ' when HWR is between 1.1~1.3 in each angle is just lower than 0.04.In another example when
When the concentration of particle 3 in structure is about 5%, the chrominance space uniformity Δ u ' v ' between -80 °~+80 ° is just low
In 0.01.
Fig. 7 A~Fig. 7 F shows schematic diagram and some relevant optical characteristics of luminescence component in the embodiment of the present invention.Figure
7A, Fig. 7 C and the broken line representative in Fig. 7 E with arrow are path of the light in luminescence component, and in Fig. 7 B, Fig. 7 D and Fig. 7 F
The light field image of the luminous pattern of these luminescence components is shown.
There is luminescence component in Fig. 7 A a light emitting device 3000 to be formed in the light emitting device on a support plate 10
3000, the first lens 160, one of a covering light emitting device 3000 be located at the second lens 162 on the first lens 160 and
One is located at the wavelength conversion layer 4 on the second lens 162.The light issued from light emitting device 3000 is first by the first lens
The second lens 162 are entered back into behind 160 change directions.The light to come from the first lens 160 is then by 162 side of change of the second lens
To simultaneously toward the direction advance for being essentially perpendicular to support plate 10.As shown in Figure 7 B, the interior zone of luminous pattern is with higher bright
Degree, and interior zone generally corresponds to the size and shape of the first lens 160.The area ratio of interior zone and entire light field
Example, is generally corresponding to forward projection's area ratio to the first lens 160 and the second lens 162.
In detail, as shown in Figure 7 A, lens 162 have a upper surface, a lower surface, multiple to connect with wavelength conversion layer 4
Side wall and a depression to accommodate the first lens 160 and light emitting device 3000.Depression has a convex surface toward light emitting device
3000 direction protrusion, and have a substantially equal width with lens 160.And side of multiple side walls from upper surface toward lower surface
To adjacent to each other inside.In other words, from the point of view of cross-sectional view/top view, upper surface is bigger than lower surface/wide.Side wall can be flat
The combination of face, curved surface or plane and curved surface.In one embodiment, upper surface or lower surface can be round, oval
Shape, rectangle, triangle or other geometries.Moreover, upper surface and lower surface can have same or different shape
Shape.When the angle difference for the light that light emitting device 3000 is issued, these light can be by side wall or convex refractive
Or scattering.As shown, convex surface can be into the upper surface of lens 162 compared to the peripheral region of 162 upper surface of lens
More light (or so that light is advanced with collimating fashion) is collected in heart district domain, as shown in Figure 7 B.
As seen in figure 7 c, most of light issued from light emitting device 3000 is led again by after the scattering of the first lens 160
To the edge or periphery to the third lens 164, and reflected by the third lens 164.So as illustrated in fig. 7d, luminous pattern
Edge or periphery can be brighter than interior zone.
In detail, as seen in figure 7 c, lens 164 have one be connected with wavelength conversion layer 4 upper surface, a lower surface,
Multiple side walls and a hole are to accommodate lens 160 and light emitting device 3000.The section in hole is triangle, with inclined side
Edge.The lower width in hole is bigger than the maximum width of lens 160.In several embodiments, compared to the upper surface of lens 164
Intermediate region, inclined edge (or surface) can disperse the peripheral region of upper surface of more light to lens 164, such as
Shown in Fig. 7 D.
As seen in figure 7e, the 4th lens 166 have with the similar structure of the second lens 162.In detail, as seen in figure 7e,
There is lens 166 a flat upper surface to be connected to wavelength conversion layer 4, a lower surface, multiple sides with a hole to accommodate
Lens 160 and light emitting device 3000.Hole has a convex surface, and the curvature on this convex surface is smaller than the convex surface in 162 hole.From
The light that light emitting device 3000 issues is moved to lens 166 to other places in lens 166 after first being bent by lens 160.Phase
Compared with structure shown in Fig. 7 A, light is scattered by lens 160 (especially convex surface), rather than as shown in Figure 7 A, light is with standard
Straight mode is with mobile perpendicular to the direction of support plate 10.In addition, the light that light emitting device 3000 issues also can be by the side of lens 166
Wall is reflected.Optical design of the luminous pattern shown by Fig. 7 F compared to Fig. 7 B has preferably in light intensity distributions
Evenness.
It is in luminescence component, from the positive light L1 light issued in wavelength conversion layer 4 and light backwards shown by Fig. 7 G
Line L2.Light L1 can have different optical characteristics from light L2 in different luminescence components, be exactly shown by following table
Fig. 7 A, Fig. 7 C, luminescence component in Fig. 7 E light L1 and light L2 property difference.For example, in the luminescence component of Fig. 7 A,
Positive light L1 and the colour temperature difference between the light L2 are less than 1000K, and forward direction light L1 and backwards between light L2
Light extraction efficiency difference be greater than 10lm/W.
The phosphor concentration 30% of wavelength conversion layer 4 in Fig. 7 A and with a thickness of 0.5mm, and the wavelength convert in Fig. 7 E
Layer 4 phosphor concentration 50% and with a thickness of 0.25mm.Wavelength conversion layer 4 in Fig. 7 C with a thickness of 0.45mm, and outside
The phosphor concentration in region is 30%, and the phosphor concentration of inside region is 10%, as shown in fig. 7h.In one embodiment, from
The angle between light and wavelength conversion layer that light emitting device issues hardly influences the light issued from luminescence component
Optical characteristics.With reference to Fig. 7 I~Fig. 7 J, the angle of three incident rays and wavelength conversion layer is 45 °, 60 ° and 90 ° respectively, is such as schemed
Shown in 7I.And the other side in wavelength conversion layer relative to these three light one, measure the light intensity of these three corresponding light
Spend it is almost the same, as shown in figure 7j.
It is the schematic diagram of luminescence component 1008A shown by Fig. 8 A.Luminescence component 1008A has one to be turned by a first wave length
That changes that layer 40, a second wave length conversion layer 42 and the hyaline layer 60 being formed between wavelength conversion layer 40 and 42 stacked is folded
Layer.The light that luminescence component 1008A in Fig. 8 A is issued, optical characteristics can be influenced by certain characteristics of this lamination, example
As the thickness and first wave length conversion layer 40 and second wave length of first wave length conversion layer 40 and second wave length conversion layer 42 are converted
The concentration expressed in percentage by weight (wt%) of layer 42 is all that possible will affect the parameter of the light extraction efficiency of luminescence component 1008A.Light compared with
It is easy to be absorbed by the wavelength conversion layer with higher weight percentage concentration, therefore light extraction efficiency is turned in more light by wavelength
It changes in the case that layer absorbs and also reduces.When the thickness of wavelength conversion layer is thicker, indicate that light will be through in wavelength conversion layer
Longer distance is crossed, therefore, light is also easier to be absorbed and reduce light extraction efficiency.In another embodiment, with reference to Fig. 8 B,
This lamination be design allow light can pass through second wave length conversion layer 42 before, allow light first first wave length conversion layer 40 with
Roundtrip between second wave length conversion layer 42.In one embodiment, with reference to following table, the concentration of first wave length conversion layer 40 is
70%, the concentration of second wave length conversion layer 40 is 5%, and the thickness of first wave length conversion layer 40 and second wave length conversion layer 42 is all
0.3mm.Positive light L1 and backwards to colour temperature (CCT) standard deviation of light L2 it is in the luminescence component 1007A of Fig. 7 A
2720.383, but be 1258.146 in the luminescence component 1008A of Fig. 8 A.Total light of luminescence component 1007A in Fig. 7 A extracts
Total light extraction efficiency (about 137.087lm/ of the efficiency (about 138.256lm/W) with the luminescence component 1008A in Fig. 8 A
W) close.By using the structure with two layers of wavelength conversion layer, component 1008A in Fig. 8 A it is positive on direction backwards
It can maintain similar light extraction efficiency and preferred colour temperature (CCT) standard deviation is provided.In one embodiment, first wave length is converted
Influence of the phosphor concentration of layer 40 to positive light L1 colour temperature (CCT), compared with the phosphor concentration pair of second wave length conversion layer 42
Influence backwards to light L2 colour temperature (CCT) is big.
It is the luminescence component of embodiment according to the present invention shown by Fig. 8 C~Fig. 8 D.Luminescence component in Fig. 8 C
1008C has two light emitting devices 3000 being separately positioned on two support plates 10, can issue light towards the left side and the right
Line.The left and right sides of wavelength conversion layer 44 between lens 170a and 170b can be used to absorb and convert to send out from two
The light of electro-optical device 3000.The two light sources all issue identical coloured light, for example, infrared light, feux rouges, green light, blue light with it is ultraviolet
Light.It, can when wavelength convert particle concentration of the colour temperature of luminescence component 1008C in wavelength conversion layer 44 increases in one embodiment
To be lowered to 6500K.However, when the wavelength conversion material concentration in wavelength conversion layer 44 increase to 30% or it is more when
It waits, colour temperature will remain unchanged in 6500K or so.Likewise, when the wavelength convert particle concentration in wavelength conversion layer 44 increases,
Luminous efficiency is consequently increased.Light extraction efficiency can promote about 290lm/W.But the wavelength in wavelength conversion layer 44 turns
Conversion materials concentration increase to 30% or it is more when light extraction efficiency will be maintained at 290lm/W or so.
There is a light emitting device 3000 to be located on support plate 10 component 1008D in Fig. 8 D, two wavelength conversion layers 46 and
48 and a lens 172 be covered with light emitting device 3000 and these wavelength conversion layers 46 and 48.With reference to Fig. 8 D, light L1 with
Light L3 is incident on wavelength conversion layer 46 and 48 positive side after being redirected to and light L2 and light L4 are by again
The side at the back side of wavelength conversion layer 46 and 48 is incident on after guiding.In one embodiment, the thickness of wavelength conversion layer 46 and 48
It is all 0.55mm.
The optical characteristics of luminescence component is as shown in the following chart, and lens 172 are opposite with central axis or central plane (not shown)
Claim, therefore symmetrical light path can be provided.In other words, light L1 and L3 is relatively mirror image, light L2 and light L4
It is relatively mirror image.Colour temperature standard deviation between light L1 and light L2 or light L3 and light L4 is less than 600K, also than figure
The standard deviation of optical module in 7A is low.Light extraction efficiency is greater than 150lm/W, then is the light extraction than the optical module in Fig. 7 A
It is high-efficient.
Fig. 9 A~Fig. 9 D shows the schematic diagram of multiple luminescence components according to an embodiment of the present invention.With reference to Fig. 9 A, lens
174A and 50 optical coupling of wavelength conversion layer.Light can enter from the side of lens, then leave from the other side.When the incidence of light
Angle appropriate can control, and between the upper surface and lower surface inside lens 174 when generation total reflection, light is just
Can in lens 174 roundtrip, and light can hit from different positions and wavelength conversion layer 50 and be absorbed.Mostly light
Line is absorbed, and wavelength conversion layer 50 can also generate the light more converted.
Luminescence component 1009B in Fig. 9 B has a light emitting device 4000 to be set on support plate 10, one has hole
1740 lens 174 and one it is set to wavelength conversion layer 50 on lens 174.Light emitting device 4000 is arranged on hole
In 1740, and it is completely covered by lens 174.The illuminated diagram of the positive side of lens 174 is shown in TU 9C, and Fig. 9 D is shown
Illuminated diagram of the mirror 174 backwards to side.The optical characteristics of luminescence component 1009B is listed below, wherein the mark of the colour temperature of light L1 and L2
Quasi- difference is lower than 200K, and whole light extraction efficiency is 140lm/W or so.
Figure 10 A~Figure 10 D shows the schematic diagram of luminescence component according to an embodiment of the invention.With reference to Figure 10 A~figure
10B, light roundtrip in lens 176.Lens 176 have one first alar part 1760 and one second alar part 1762.First wing
A tilt angle theta 1 is accompanied between portion 1760 and support plate 10.A tilt angle theta 2 is accompanied between second alar part 1762 and support plate 10.
In one embodiment, tilt angle theta 1 and tilt angle theta 2 are equally all 30 °.As shown in Figure 10 A, light L1 is in the second alar part
1762 internal reflections twice perhaps repeatedly after be then passed through 52 light L2 of wavelength conversion layer 1762 internal reflection of the second alar part twice or
It is mobile toward the direction far from wavelength conversion layer 52 again after repeatedly, and do not pass through wavelength conversion layer 52.Wavelength conversion layer 52 is not
It is only located on the surface S1 between the first alar part 1760 and the second alar part 1762 and S2, also is located at the edge of the first alar part 1760
On the edge E1 of E2 and the second alar part 1762.As shown in Figure 10 B, the first alar part 1760 and the second alar part 1762 are with V-arrangement/U
The shape of shape bifurcated on light emitting device 5000, light L1 are moved with L3 in figure with similar path.By using figure
Lens in 10A~Figure 10 B, the wavelength of light L1~L3 are easier to be wavelength-converted the conversion of layer 52.Luminescence component in Figure 10 B
It is located on support plate 10 with a light emitting device 5000, the lens 176 with the first alar part 1760 and the second alar part 1762,
An and wavelength conversion layer 52.Figure 10 C shows the figure of the positive side for lens 176, and shown in Figure 10 D
The figure backwards to side for lens 176.The optical characteristics of component is listed below, and light L1 is low with the colour temperature standard deviation of L2
In 700K, and total light extraction efficiency is then greater than 150lm/W.
With reference to Figure 11 A, there are component multiple light emitting devices 6000 (to show five light emitting devices 6000 in figure, but shine
The quantity of device is the amount doesn't matter), one between light emitting device 6000 there are the diffusion layer of a distance 18, one be located at diffusion layer
Prism layer 20 and one on 18 are located at liquid crystal screen (LCD) module 22 on prism layer 20, and light emitting device 6000 expands
The backlight module of a liquid crystal display can be formed by dissipating layer 18 and prism layer 20, and liquid crystal screen (LCD) module 22 has one
Lens.Diffusion layer 18 can redistribute the light for carrying out selfluminous device 6000, to increase the light uniformity of light emitting device 6000,
And prism layer 20 has multiple prisms to concentrate light.Therefore, the light field uniformity in LCD module 22 also increases.It is real one
It applies in example, the lens in liquid crystal screen (LCD) module 22 are greater than two adjacent luminous dresses with the distance between light emitting device 6000
The distance set.
The schematic diagram of component is shown in Figure 11 B.Label H represents the distance between light emitting device 6000 and LCD module 22,
What label R was represented is radius of the light emitting region in LCD module 22, and label d represent between adjacent light emitting device it is lateral away from
From.The smaller light field also represented in LCD module 22 of H is smaller, that is, radius R smaller.In one embodiment, light emitting device 6000
Light field radius size in liquid crystal screen (LCD) module 22 (or lens in module) is equal to two light emitting devices 6000
Between twice of distance.The top view schematic diagram of the arrangement of light emitting device 6000 is shown in Figure 11 C~Figure 11 D.Light emitting device
6000 are aligned to the triangle being connected with each other in Figure 11 C, and light emitting device 6000 is aligned to be connected with each other in Figure 11 D
Square.Light emitting device is aligned to different shapes, can provide different optical profiles.The list of arrangement in Figure 11 C
Plane accumulates provided Illumination Distribution figure as depicted in fig. 11E, Illumination Distribution figure provided by the unit area of the arrangement in Figure 11 D
As shown in fig. 11f.In one embodiment, the radius R of the light field of single a light emitting device 6000 can be configured to and adjacent hair
The shortest distance between electro-optical device 6000 is identical.As shown in Figure 11 E and Figure 11 F, different colors respectively represents different illuminations
Degree, and the Detailed controls of color and lighting level are referred to the legend in figure.
In the present embodiment, Figure 11 G is optical uniformity caused by the displacement of a light emitting device 6000 in the X direction
The schematic diagram of variation, the signal of the variation of optical uniformity caused by the displacement of mono- light emitting device 6000 of Figure 11 H in the Y direction
Figure.What the abscissa in Figure 11 G or Figure 11 H represented is the position of a light emitting device 6000 in luminescence component relative to original
The offset distance of this position, what the ordinate in Figure 11 G or Figure 11 H represented is the normalized uniformity of illuminance of luminescence component.
As shown in Figure 11 G and Figure 11 H, the arrangement mode of the displacement of positive (X>0 or Y>0) and negative sense (X<0 or Y<0) in square
In, similar reduction amplitude is all caused to the uniformity of illumination.However in rounded projections arranged mode, positive (X > 0 or Y > 0) with
Influence of the displacement of negative sense (X < 0 or Y < 0) to the uniformity of illumination is then different.For the arrangement mode of triangle, negative sense
Displacement caused by uniformity of illuminance reduction, it is more than reduction caused by positive displacement.Whether it is arranged in triangle
Perhaps the seat where square arrangement light emitting device has column in (to the forward or past negative sense) in X-direction or Y-direction
When the displacement of 0.1mm, optical uniformity can all fall below 0.9 times of maximum value.
It is measurement equipment according to an embodiment of the invention shown by Figure 12 A~Figure 12 B.Equipment in 12A figure can
To measure the far-field optical characteristics of 7000 emitted light of light emitting device, the light issued from light emitting device 7000 can pass through first
It is received after aperture 178a and the second aperture 178b by spectrometer 24.First aperture 178a and the second aperture 178b removes part light
Line, and the light for being retained in special angle is absorbed by spectrometer 24.The equipment of Figure 12 B can measure light emitting device 7000 and be issued
The midfield optical characteristics of light, and can be connect after convex lens 180 by spectrometer 24 from the light that light emitting device 7000 issues
It receives.
Part is shown using the obtained measurement of device in Figure 12 A in Figure 12 C~Figure 12 E, wherein Figure 12 C~
0 degree of Figure 12 E is generally corresponding to the center of light emitting device 7000, and angle represents measuring point and 7000 center of light emitting device
Angle.Figure 12 C then respectively illustrates luminous intensity, the luminous intensity of yellow light of blue light after normalization, and whole luminous intensity.All
Light can have blue light, yellow light or other coloured light.As shown in the figure, different light have different strong in different angles
Degree.Figure 12 D then respectively illustrates the ratio YBR of the luminous intensity of yellow light and the luminous intensity of blue light, this ratio is exhausted with angle
Value is increased and is increased.Especially yellow light is easier to be observed in biggish angle, and this also results in luminous pattern and is scheming
There is a partially yellow region around case.With reference to Figure 12 E, greater than 6500K, (light emitting device center is attached by 0 degree by correlated colour temperature CCT
About 4500K (light emitting device near its circumference) when closely) being reduced to 90 degree.
As shown in figure 13, lens 184 can with device to light emitting device 8000 with homogenize the illumination of issued light with
Color.Blue light can be transferred to the direction of greater angle by lens 184, and yellow light is turned to the direction of smaller angle.Lens
184 are located at the hole 1840 of body lower surface with a main body with one, and hole 1840 defines a space to accommodate hair
Electro-optical device 8000.The cross-sectional view in hole 1840 has a upper inner surface and a lower inner surface.Upper inner surface has a clock
Shape/arch shape/profile.Lower inner surface has the hangover for extending to 184 lower surface of lens.Upper inner surface and lower interior table
Face can have same or different curvature.In addition, upper inner surface itself or lower inner surface itself can have one or more
A curvature.There are several regions being connected in the outer surface of lens 184, and (as shown in figure 13, these regions can regard on cross-sectional view
For line segment), the coupling part of adjacent area can have the angle change perceived specific specific coloured light to be directed to
Direction.For example, it with the coloured light of shorter wavelength, such as blue light, can be bent downwards when bumping against upper zone；
And the coloured light with longer wavelength, such as yellow light, it can be folded upward at when bumping against lower region.
The present invention advocates U.S.'s Applicatioll the 62/029977th and United States Non-Provisional application case the 14/810180th simultaneously
Number priority, wherein No. 62/029977 Chinese Papers for being included of U.S.'s Applicatioll and associated profiles all quote for
A part of present application.
It is to be understood that in the present invention the above embodiments in appropriate circumstances, be can be combined with each other or replace, rather than
It is only limitted to described specific embodiment.Each embodiment cited by the present invention is only to illustrate the present invention, not to limit
The scope of the present invention.Anyone connects and does not depart from spirit of the invention any obvious modification or change made for the present invention
With range.
Claims (10)
1. a kind of luminescence component, includes:
Light emitting device includes the first upper surface and the first side surface；And
Outermost wavelength conversion layer covers first upper surface, and has the second upper surface and the second side surface,
Wherein, between the distance between first upper surface and second upper surface and first side surface and second side surface
Distance ratio between 1.1~1.3.
Also include hyaline layer 2. luminescence component as described in claim 1, be formed in the light emitting device and the wavelength conversion layer it
Between.
Also include support plate 3. luminescence component as described in claim 1, which has third upper surface, be connected to relative to
The lower surface of first upper surface, wherein the third upper surface is Lambertian scattering surface.
4. luminescence component as described in claim 1 is also set on the light emitting device comprising lens, wherein the lens include
First alar part and the second alar part.
5. luminescence component as described in claim 1 includes also transparency cover, is set on the wavelength conversion layer.
6. luminescence component as claimed in claim 5, wherein the transparency cover also includes opaque particle.
7. luminescence component as described in claim 1, wherein the wavelength conversion layer also includes opaque particle.
8. luminescence component as claimed in claim 2, wherein the hyaline layer also includes opaque particle.
9. luminescence component as described in claim 1, wherein first upper surface is parallel to second upper surface.
10. luminescence component as described in claim 1, wherein first side surface is parallel to the second side surface.
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| CN201910879067.XA CN110578912B (en) | 2014-07-28 | 2015-07-28 | Light emitting assembly |
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| US201462029977P | 2014-07-28 | 2014-07-28 | |
| US62/029,977 | 2014-07-28 | ||
| US14/810,180 US9911907B2 (en) | 2014-07-28 | 2015-07-27 | Light-emitting apparatus |
| US14/810,180 | 2015-07-27 |
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| CN110231734A (en) * | 2018-03-06 | 2019-09-13 | 中强光电股份有限公司 | Light source module and its surface light source component |
| CN110286519B (en) * | 2019-05-29 | 2022-03-11 | 深圳赛时达科技有限公司 | Quantum dot backlight module |
| CN110187560A (en) * | 2019-05-29 | 2019-08-30 | 深圳市赛时达光电科技有限公司 | Quantum dot film |
| CN113866179B (en) * | 2021-12-02 | 2022-03-15 | 苏州长光华芯光电技术股份有限公司 | Defect detection system and method for semiconductor laser chip |
| CN115542610A (en) * | 2022-10-26 | 2022-12-30 | 南通惟怡新材料科技有限公司 | Side light-emitting quantum dot lens, backlight module and quantum dot lens manufacturing method |
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