JP2006216765A - Light source apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light source apparatus capable of emitting light, that is made different wavelengths and made a narrower wavelength range, in the exit direction of the apparatus. <P>SOLUTION: The light source 1 comprises a semiconductor light emitting element 4 composed of an electrode 8 on a surface 14 or/and a rear surface 15; and a wavelength conversion resin in which a wavelength conversion material 6 excited by radiation light emitted from an active layer 5 of the semiconductor light emitting element 4, for converting the radiation light to light having a different wavelength of that of the radiation light is mixed into a resin having adhesiveness and transmitting light. The wavelength resin is provided on at least the active layer 5 of side surfaces 12a, 12b, 13a, 13b perpendicular to the surface 14 and the rear surface 15, and ones of the side surfaces are placed at an opposite position in an exit direction. It is thus possible to obtain exit light in an upper direction and in a transversal direction of the placed side surfaces, and to obtain high brightness exit light and converted light by projecting light emanating directly from the active layer existent on the side surfaces to the wavelength conversion resin. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  In the present invention, one of a pair of side surfaces opposed to each other of four side surfaces which are perpendicular to the active layer made of a compound crystal of a semiconductor light emitting element (XY direction) is set as an emission side as a device, and the other side. Is placed on the bottom of the device, and wavelength conversion material is provided on these side surfaces, so that the emitted light different from the high-brightness semiconductor light emitting element itself or the emitted light with a narrower wavelength peak width of the semiconductor light emitting element can be obtained. The present invention relates to a light source device that can be obtained.

  As a conventional light source device, as shown in FIG. 5, electrodes 8 a and 8 b are provided on the surface portion 14 (surface parallel to the surface of the active layer 5) of the semiconductor light emitting element 4, and the fluorescent material 6 is provided on these surface portions 14. (Wavelength conversion material) is provided, and the semiconductor light emitting element 4 is fixed on the conductive pattern electrodes 3a and 3b provided on the bottom of the case 2 with an adhesive 7, and the conductive pattern electrodes are bonded from the electrodes 8a and 8b to the bonding wires 9. What is connected to 3 a and 3 b, is filled with a permeable resin 11 in the case 2, and is emitted from the opening 10.

However, the electrodes 8a and 8b are provided on the back surface portion 15, or the fluorescent material 6 (wavelength conversion material) is provided on the back surface portion 15, and the surface portion 14 is placed and bonded so that the back surface portion 15 faces the opening 10 direction. The method of fixing with the agent 7 is the same.
JP 2001-177158 A

  The above-described conventional light source device can take a large light emitting surface, but the light from the active layer must pass through the P layer and the N layer, and there is a problem in obtaining a strong light beam. Further, since the electrodes are provided on the front surface portion and the back surface portion (surface parallel to the active layer surface) of the semiconductor light emitting device, the fluorescent material (wavelength conversion material) is uniformly provided and the emitted light at the electrode portion is obtained. There are issues that cannot be done.

  The present invention has been made in order to solve the above-described problems. Conventionally, an electrode or the like is provided, and a front surface portion or a back surface portion that is in the Z direction with respect to the layer of the active layer becomes an emission direction of the device. As described above, the back surface portion and the front surface portion of the semiconductor light emitting element are mounted on the device. In the present invention, the side surface portion (XY direction) having an active layer connected to the front surface portion and the back surface portion of the semiconductor light emitting element. Place the other opposite side surface part on the device so that one side surface side is in the emission direction of the device, and emit directly from the active layer exposed on these side surfaces in the emission direction of the device In addition, the present invention provides a light source device that can emit light having a different wavelength or a narrower wavelength range depending on the wavelength conversion material in the emission direction of the device by using the emitted light.

A light source device according to claim 1 of the present invention includes a semiconductor light emitting element having electrodes on the front surface portion and / or the back surface portion,
A wavelength conversion material that is excited by radiation light emitted from the active layer of the semiconductor light emitting element and converts the wavelength conversion material to a wavelength different from that of the radiation light, and a wavelength conversion resin mixed with a resin that has adhesiveness and transmits light,
The wavelength conversion resin is provided on at least the active layer of the side surface orthogonal to the front surface portion and the back surface portion, and one of the side surface portions is placed at a position facing the emission direction of the apparatus.

A light source device according to claim 1 includes a semiconductor light emitting element having electrodes on the front surface portion and / or the back surface portion,
A wavelength conversion material that is excited by radiation light emitted from the active layer of the semiconductor light emitting element and converts the wavelength conversion material to a wavelength different from that of the radiation light, and a wavelength conversion resin mixed with a resin that has adhesiveness and transmits light,
Since the wavelength conversion resin is provided on at least the active layer of the side surface orthogonal to the front surface portion and the back surface portion, and one of the side surface portions is mounted at a position opposite to the emission direction of the device, the mounted upper direction and horizontal direction The light emitted directly from the active layer present on the side surface can be projected onto the wavelength conversion resin.

  In the light source device according to claim 2, one side surface side of the side surface portion of the semiconductor light emitting element is placed on the wavelength conversion resin and the wavelength conversion resin is provided on the other side surface portion. Features.

  In the light source device according to claim 2, one side surface side of the side surface portion of the semiconductor light emitting element is placed on the wavelength conversion resin and the wavelength conversion resin is provided on the other side surface portion. All the light directly emitted from the active layer present in the light can be projected onto the wavelength conversion resin.

  Furthermore, the light source device according to claim 3 is characterized in that a wavelength conversion resin is provided on a front surface portion and / or a back surface portion of the semiconductor light emitting element.

  Since the light source device according to claim 3 is provided with the wavelength conversion resin on the front surface portion and / or the back surface portion of the semiconductor light emitting element, the semiconductor light emitting device has the back surface portion and transparency using a substrate having transparency. Light from the active layer transmitted from the surface portion on which the electrode is provided can be projected onto the wavelength conversion resin.

  The light source device according to claim 4 is characterized in that the resin having adhesiveness and transmitting light is transparent or opaque and colorless or colored.

  In the light source device according to claim 4, since the resin having adhesiveness and transmitting light is transparent or opaque and colorless or colored, it is possible to obtain light emitted from the light source device suitable for the purpose. it can.

  Furthermore, in the light source device according to claim 5, the front surface portions and the back surface portions or the front surface portions of the four semiconductor light emitting elements are arranged such that one side of the front surface portion and one side of the back surface portion are in contact with or in proximity to each other. It arrange | positions so that a back surface part may face substantially right angle.

  In the light source device according to claim 5, the four semiconductor light-emitting elements are arranged such that one side of the front surface portion and one side of the back surface portion are in contact with each other or close to each other. Since the portions are arranged so as to face each other at a substantially right angle, high-luminance outgoing light can be obtained.

As described above, the light source device according to claim 1 includes a semiconductor light emitting element having an electrode on the front surface portion and / or the back surface portion,
A wavelength conversion material that is excited by radiation light emitted from the active layer of the semiconductor light emitting element and converts the wavelength conversion material to a wavelength different from that of the radiation light, and a wavelength conversion resin mixed with a resin that has adhesiveness and transmits light,
Since the wavelength conversion resin is provided on at least the active layer of the side surface orthogonal to the front surface portion and the back surface portion, and one of the side surface portions is mounted at a position opposite to the emission direction of the device, the mounted upper direction and horizontal direction The outgoing light can be obtained. And since the light directly radiate | emitted from the active layer which exists in a side part can be projected on wavelength conversion resin, a high-intensity emitted light and converted light can be obtained. Further, since the active layer itself is a thin layer, it is possible to obtain a minute emitted light such as a pinpoint.

  In the light source device according to claim 2, since one side surface side of the side surface portion of the semiconductor light emitting element is placed on the wavelength conversion resin and the wavelength conversion resin is provided on the other side surface portion, All light directly emitted from the active layer present on the side surface can be projected onto the wavelength conversion resin. As a result, it is possible to obtain light whose wavelength has been efficiently converted without waste.

  Furthermore, since the light source device according to claim 3 is provided with the wavelength conversion resin on the front surface portion and / or the back surface portion of the semiconductor light emitting element, the back surface portion and the transparency using the substrate having transparency on the semiconductor light emitting element are provided. The light from the active layer transmitted from the surface portion on which the electrode is provided can be projected onto the wavelength conversion resin. As a result, all light can be obtained as wavelength-converted light without waste.

  In the light source device according to claim 4, since the resin having adhesiveness and transmitting light is transparent or opaque and colorless or colored, the light emitted from the light source device suitable for the purpose is obtained. be able to. Specifically, it is possible to obtain various kinds of emitted light according to the purpose, such as clear monochromatic light, monochromatic light changed to shade, white light, sharp and clear light or hazy light with haze. .

  Furthermore, in the light source device according to claim 5, the front surface portions and the back surface portions or the front surface portions of the four semiconductor light emitting elements are arranged such that one side of the front surface portion and one side of the back surface portion are in contact with or in proximity to each other. And the back surface portion are arranged so as to face each other at a substantially right angle, so that high-luminance outgoing light can be obtained. In addition, common wiring can be performed and workability is excellent.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
1 is a schematic perspective view of a light source device according to the present invention, FIG. 2 is a schematic cross-sectional view of the light source device according to the present invention, FIG. 3 is a schematic front view of the light source device according to the present invention, and FIG. It is a schematic perspective view of a semiconductor light emitting element mounting state of the light source device.

  As shown in FIG. 4, the present invention does not use the layer wall junction surface of the active layer of the semiconductor light emitting device as the emission direction of the light source device as in the prior art, but the back surface portion of the semiconductor light emitting device 4 made of a compound crystal. 15 (for example, a sapphire substrate), and a pair of opposing side surface portions of the four side surface portions 12a, 12b, 13a and 13b from which the active layer 5 formed between the back surface portion 15 and the front surface portion 14 is exposed. One of the side surfaces 13a of 13a and 13b is set as an emission side as the device, the other side surface portion 13b is placed on the bottom of the device, and the wavelength conversion material 6 is provided on these side surfaces 12a, 12b, 13a and 13b. Thus, a light source device is provided that can obtain outgoing light different from the high-luminance semiconductor light-emitting element 4 itself or outgoing light with a narrower wavelength peak width of the semiconductor light-emitting element 4.

  As shown in FIGS. 1 and 2, the light source device 1 is a colorless and transparent adhesive 7 in which a wavelength conversion material 6 is mixed at a position where the lead frame 3 and the conductive pattern 3 are provided on the bottom 2 b of the case 2. The semiconductor light emitting element 4 is fixedly mounted, and the electrodes 8a and 8b provided on the surface portion 14 can be electrically connected to the lead frame 3 and the conductive pattern 3 by the bonding wires 9a and 9b, respectively, and electricity can be supplied from the terminal 16. Like.

  Further, the light source device 1 includes the active layer 5 provided on the side surface portion 13 a of the semiconductor light emitting element 4 facing the opening 10 of the case 2 and the side surface portions 12 a and 12 b of the semiconductor light emitting element 4 facing the inclined surface 17 of the case 2. The colorless and transparent adhesives 7 and 7 'mixed with the wavelength conversion material 6 are respectively provided in the active layer 5 and the opening 10 is filled with a filling resin 11 such as a colorless and transparent resin. . In this example, the wavelength conversion material 6 mixed with the adhesives 7 and 7 'is used as the wavelength conversion resin. However, the semiconductor light emitting element 4 is placed on the pattern 3 with the adhesive 7 without mixing the wavelength conversion material 6. It may be fixedly mounted on.

  The light source device 1 includes a lead frame 3 of an injection or transfer mold type or an electrically insulating substrate provided with a conductive pattern 3 to bond a semiconductor light emitting element 4 with a die bonder, and a bonding wire 9 to form a conductive pattern 3. Bond to.

  In the case of an injection or transfer mold type, a lead frame 3 made of a phosphor bronze material or the like in which a pattern is formed in a resin by insert molding is inserted to form a resin on the lead frame 3.

  However, at this time, there is nothing in the area of the mounting bottom 2b of the semiconductor light emitting element 4, the lead frame 3 for bonding the bonding wire 9, and the opening 10 for emitting light from the semiconductor light emitting element 4.

  The lead frame 3 is made of a material having good electrical conductivity such as phosphor bronze material and aluminum and having toughness and plasticity.

  The lead frame 3 is made of a precious metal such as a gold plating or a copper plating, and then a gold plating or the like is performed, and an exposed portion of the electrode terminal 16 or the like, a portion where the semiconductor light emitting element 4 is placed, a portion where the bonding wire 9 is bonded, or the like This prevents the surface of the lead frame 3 from being electrically oxidized during die bonder, wire bonding, etc., reduces the electrical resistance, and reduces the overall conductivity and the contact resistance at the electrode terminal 16.

  Although not shown, the electrically insulating substrate is mainly composed of AlO or SiO, and is made of a compound such as ZrO, TiO, TiC, SiC, or SiN, and has excellent heat resistance, hardness, and strength, and has a white surface. And a liquid crystal polymer resin substrate formed by mixing or applying a white powder such as titanium oxide, a glass cloth epoxy resin substrate, or the like.

  Furthermore, it can also be comprised from laminated boards, such as a silicon resin, paper epoxy resin, synthetic fiber cloth epoxy resin, and paper phenol resin, modified polyamide, polybutylene terephthalate, polycarbonate, aromatic polyester, etc.

  The conductive pattern 3 is formed by depositing a highly conductive metal by vacuum deposition, sputtering, ion plating, CVD (chemical vapor deposition), etching (wet, dry) or the like.

The semiconductor light-emitting element 4 is a high-luminance light-emitting element such as a quaternary compound or a compound such as InGaAlP, InGaAlN, or InGaN. Specifically, the semiconductor light emitting element 4 is manufactured on a substrate such as Al ₂ O ₃ , InP sapphire, SiC, GaAs, ZnSe or the like by metal organic vapor phase epitaxy or the like, and the uppermost portion thereof is In ₂ O ₃ , SnO. _2. Transparent electrodes 8a and 8b are provided by sputtering, vacuum vapor deposition, chemical vapor deposition or the like using a material made of ITO or the like.

  Further, the semiconductor light emitting element 4 has the anode electrode 8a and the cathode electrode 8b on one surface (the surface portion 14 in the example of FIGS. 1 and 2), but the anode electrode 8a and the cathode electrode on the back surface portion 15 side. 8b may be provided, or one anode electrode 8a or one cathode electrode 8b may be provided on the front surface portion 14 and the back surface portion 15, respectively.

  The wavelength conversion material 6 is an inorganic or organic fluorescent pigment, fluorescent dye, or the like. The wavelength conversion material 6 is mixed with a colorless and transparent adhesive 7 to form a wavelength conversion resin. The wavelength conversion resin is used as the semiconductor light emitting device 4. The active layer 5 is provided on the side surface.

  For example, a wavelength conversion resin is provided between the bottom 2b of the case 2 and one side surface of the semiconductor light emitting element 4 placed on the bottom 2b, and is fixedly bonded. Similarly, the remaining three side surfaces also remain in the direction of the inclined surface 17 of the case 2 and the direction of the opening 10 with the wavelength conversion resin obtained by mixing the wavelength conversion material 6 in the colorless and transparent adhesive 7 '. Provided on three sides.

  Although not shown here, the wavelength conversion resin in which the wavelength conversion material 6 is mixed in the colorless and transparent adhesive 7 ′ is used as the front surface portion 14 or the back surface portion 15 (side surfaces 12 a, 12 b, 13 a, It may be provided on a surface other than 13b.

  For example, the wavelength conversion material 6 that emits blue emitted light directly from the side surfaces from the active layer 5 of the InGaAlN-based semiconductor light-emitting element 4 and is excited by the light from the semiconductor light-emitting element 4 on these side surfaces to emit yellow or orange light. Transparent adhesives 7 and 7 'mixed with (YAG-based) are provided on side surfaces 12a, 12b, 13a and 13b as wavelength conversion resins. As a result, the emission color mixed by the blue emission color of the semiconductor light emitting element 4 itself and the emission color such as yellow or orange from the wavelength conversion material 6 becomes white, and directly from the side surface 13 a facing the opening 10. The light from the side surfaces 12a and 12b that proceed to the opening 10 and oppose the inclined surface 17 of the case 2 is reflected by the inclined surface 17 and travels in the direction of the opening 10, and the mounting side that opposes the bottom 2b of the remaining case 2 The light from the side surface portion 13b passes through the semiconductor light emitting element 4 itself and travels in the direction of the opening 10.

  Further, a transparent adhesive 7 ′ in which the wavelength conversion material 6 (YAG type) is mixed is also provided as a wavelength conversion resin on the front surface portion 14 and the back surface portion 15 other than the side surface portions 12 a, 12 b, 13 a, 13 b of the semiconductor light emitting element 4. Then, the light of the semiconductor light emitting element 4 itself and the light from the wavelength conversion material 6 are mixed and proceed in the direction of the inclined surface 17 of the case 2, reflected by the inclined surface 17 and proceed in the direction of the opening 10.

  If a fluorescent material that emits light of the same color as the emitted light from the semiconductor light emitting element 4 is used in place of the wavelength converting material 6, clearer emitted light can be emitted.

  The adhesive 7 and the adhesive 7 'may be a transparent adhesive having the same color as that of the final outgoing light. Depending on the desired outgoing light, the adhesive 7 and the adhesive 7' are not transparent (clear light) but are transparent in the case of outgoing light having turbidity. Not necessary.

  The bonding wires 9a and 9b are made of conductive wires such as gold wires, and are electrically connected between the anode electrode 8a and the pattern 3 of the semiconductor light emitting element 4 and between the cathode electrode 8b and the pattern 3 by a bonder. ing.

  The space of the opening 10 is filled with a transparent resin such as a colorless and transparent epoxy resin or silicone resin as the filling resin 11. As a result, the semiconductor light emitting element 4 is fixed more strongly, and the light emitted from the semiconductor light emitting element 4 is emitted from the opening 10 without being attenuated without being exposed to the air layer. In addition, the bonding wires 9a and 9b are fixed, and the purpose of preventing disconnection due to vibration or the like is achieved.

  Also, if the space of the opening 10 is filled with a transparent resin such as a transparent epoxy resin or silicone resin adjusted to the same color as the emitted light of the semiconductor light emitting element 4 as the filling resin 11, a clearer emission color is emitted. Can be made.

  Further, if the resin in which the wavelength conversion material 6 made of an inorganic fluorescent pigment, an organic fluorescent dye, or the like is mixed in a colorless transparent resin is filled in the space of the opening 10 as the filling resin 11, the semiconductor light emitting element 4 itself The light emitted from the semiconductor light-emitting element 4 excited by the semiconductor light-emitting element 4 and light having a wavelength different from that of the semiconductor light-emitting element 4 are emitted to adjust the chromaticity more clearly, or the wavelength provided on the active layer 5 When the wavelength conversion amount in the conversion material 6 is small, the wavelength conversion light can be supplemented.

  Case 2 is made of an insulating resin material such as a modified polyamide, polybutylene terephthalate, nylon 46 or an aromatic polyester, etc., and titanium oxide or the like for improving light reflectivity and light shielding properties. The white powder mixed with is molded into a shape having the opening 10 by heat injection molding.

  The case 2 has an inner wall from the opening 10 to the bottom 2b as an inclined surface 17, and light emitted from the semiconductor light emitting device 4 (two side surface portions 12a and 12b of the semiconductor light emitting device 4, the front surface portion 14 and the back surface portion). 15 and the light obtained by wavelength-converting the light emitted from the semiconductor light emitting element 4 are reflected by the inclined surface 17 and emitted from the opening 10.

  Note that the surface of the inclined surface 17 does not have to be a mirror surface completely, and it is possible to obtain a broad reflected light by processing fine irregularities and to strengthen the bonding (bonding) with the transparent resin to be filled. Can do.

  The electrode terminal 16 is provided such that the lead frame 3 is used as it is, or the surface thereof is plated with a noble metal or the like and exposed to the outside from one side surface 2c of the case 2 using aluminum or copper having good electrical conductivity. .

  Next, as an embodiment of the present invention, FIG. 3 shows a view from a substantially upper front (opening 10) of the light source device. 3 shows four sides of the front surface portion 14 of the semiconductor light emitting device 4 shown in FIG. 4 and the back surface portion 15 on the conductive pattern 3 provided on the electrically insulating substrate provided on the bottom 2b of the case 2. The active layer of each semiconductor light-emitting element 4 is arranged so that the surface portions 14 and the back surface portions 15 face each other at substantially right angles so as to be in contact with or close to one side (arranged in a cross shape without a center portion). 1 side surface part 13b in which 5 is exposed is placed and fixed on an adhesive 7 (not shown), and the side surface part 13a in which the active layer 5 faces upward is directed in the direction of the opening 10, and each surface part 14 The electrodes 8a and 8b are electrically connected to the conductive pattern 3 by bonding wires 9a and 9b, respectively.

  At this time, in order to connect each semiconductor light emitting element 4 in parallel, the anode electrodes 8a are connected to the anode side conductive pattern 3 by the bonding wire 9a, and the cathode electrodes 8b are connected to the cathode side conductive pattern 3 by the bonding wire 9b. To do.

  Although not shown, when the semiconductor light emitting elements 4 in FIG. 3 are connected in series, the anode electrode 8a and the cathode electrode 8b of each semiconductor light emitting element 4 are once bonded to the conductive pattern 3 with the bonding wires 9 (islands). The final anode electrode 8a is connected to the conductive pattern 3 which is connected to the terminal electrode 16 by the bonding wire 9a and the cathode electrode 8b is connected by the bonding wire 9b.

  Although not shown here, similarly to FIGS. 1 and 2, the wavelength formed of the adhesive 7 in which the wavelength conversion material 6 is mixed when the one side surface portion 13 b of each semiconductor light emitting element 4 is placed on the pattern 3. A configuration in which a wavelength conversion resin composed of an adhesive 7 in which the wavelength conversion material 6 is mixed is also applied to or adhered to the side surface portion 13a and the other side surface portions 12a and 12b with the active layer 5 facing upward by being adhesively fixed with a conversion resin. It is also good.

  By the way, in embodiment mentioned above, when wavelength conversion resin (adhesive 7 which mixed the wavelength conversion material 6) is provided in the side part 12a, 12b, 13a, 13b of the semiconductor light-emitting device 4, the surface part 14, and the back surface part 15 For this, it is sufficient to cover at least the region of the active layer 5 instead of the entire surface.

  In this way, the side surface portion 13a where the active layer 5 is exposed is directly directed to the opening 10 that emits light from the light source device 1, and similarly, the side surface portion 13b, the side surface portion 12a, and the side surface portion 12b where the active layer 5 is exposed. The light emitted from the target light source device 1 can be obtained as high-luminance light by actively using the light emitted from the light source.

  As described above, the present invention places one side of the semiconductor light emitting element where the active layer is exposed on a conductive pattern provided on a lead frame or an insulating material by insert molding or the like. The wavelength conversion material that emits a different wavelength or a specific wavelength of the semiconductor light emitting element by exciting the light emitted from the semiconductor light emitting element to the side surface opposite to the light emitting device From the active layer, which is the light emitting group of the semiconductor light-emitting element, or light converted in wavelength by this high-intensity light from the opening. A light source device that emits light.

Suitable for light sources for backlights of small mobile products to light sources for backlights of large liquid crystal display devices, etc. Especially because of high brightness, it can sufficiently cope with places where there is external light such as car navigation systems. it can.
Furthermore, a full color display can be provided by arranging a large number of light source devices of the present invention in a matrix.

1 is a schematic perspective view of a light source device according to the present invention. It is a schematic sectional drawing of the light source device which concerns on this invention. It is a substantially upper front view of the light source device according to the present invention. It is a schematic perspective view of the light-emitting device mounting state of the light-emitting device according to the present invention. It is a schematic sectional drawing of the conventional light source device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light source device 2 Case 2b Bottom part 2c Case side surface 3 Lead frame and electroconductive pattern 4 Semiconductor light emitting element 5 Active layer 6 Wavelength conversion material 7, 7 'Adhesive 8a, 8b Electrode 9a, 9b Bonding wire 10 Opening part 11 Filling resin 12a , 12b Side surface portion 13a, 13b Side surface portion 14 Surface portion 15 Back surface portion 16 Electrode terminal 17 Inclined surface

Claims (5)

A semiconductor light emitting device having electrodes on the front surface portion and / or the back surface portion;
A wavelength conversion material that is excited by radiation emitted from the active layer of the semiconductor light emitting element and converts the wavelength conversion material to a wavelength different from that of the radiation, and a wavelength conversion resin mixed with a resin that has adhesiveness and transmits light,
The light source device, wherein the wavelength conversion resin is provided on at least an active layer of a side surface orthogonal to the front surface portion and the back surface portion, and one of the side surface portions is placed at a position opposite to the emission direction of the device. . 2. The semiconductor light emitting device according to claim 1, wherein one side surface side of the side surface portion is placed on the wavelength conversion resin and the wavelength conversion resin is provided on the other side surface portion. The light source device described. The light source device according to claim 1, wherein the semiconductor light emitting element is provided with the wavelength conversion resin on the front surface portion and / or the back surface portion. 2. The light source device according to claim 1, wherein the resin having adhesiveness and transmitting light is transparent or opaque, and is colorless or colored. The four semiconductor light emitting elements are arranged such that one side of the front surface portion and one side of the back surface portion are in contact with or close to each other, the front surface portions and the back surface portions, or the front surface portion and the back surface portion. The light source device according to claim 1, wherein the light source devices are arranged so as to face each other at a substantially right angle.

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