JP2007103981A - Light source device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a high luminance clear luminescence free from uneven coloring by utilizing exit light from a semiconductor light emitting element effectively. <P>SOLUTION: The light source device 1 has a transparent semiconductor light emitting element 4. On the pattern 2a of a lead frame 21, transparent resin 3 mixed with a wavelength conversion material is formed with an area larger than that of the semiconductor light emitting element 4. The semiconductor light emitting element 4 is bonded onto the transparent resin 3. Light emitted from the rear surface 4a of the semiconductor light emitting element 4 is subjected to wavelength conversion by the wavelength conversion material in the transparent resin 3, and the light subjected to wavelength conversion is reflected on the pattern 2a of the lead frame 21. The reflected light is mixed with light emitted directly from the surface of the semiconductor light emitting element 4 and mixed light is radiated from the surface 4b of the semiconductor light emitting element 4. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a light source device that is used as a light source for various lamps, displays, and the like, and is useful as a light source for a liquid crystal display device such as a mobile phone, a portable terminal device, and a small terminal device. The present invention relates to a light source device that can provide a white light source and is rich in weight reduction, economy, and miniaturization.

  A conventional light source using a semiconductor light emitting element has various names such as a light source, a light source device, a display device, a light emitting diode, and an LED lamp. As in the present invention, a light source device that obtains white light by combining a blue light emitting diode and a wavelength conversion material (phosphor) is known as disclosed in Patent Document 1 below. In the light source device disclosed in Patent Document 1, an LED chip, which is a gallium nitride compound semiconductor, is electrically connected to an inner lead in a cup of a mount lead, and a transparent resin containing a phosphor is placed in the cup. Filled. In some cases, a chip-type gallium nitride compound semiconductor is disposed in a casing, and a transparent resin containing a phosphor is filled in the casing.

Further, as a conventional white light source device, a device using a light emitting diode that emits light of each of red, green, and blue colors having an excellent monochromatic peak wavelength is known.
Japanese Patent Laid-Open No. 10-242513

  For example, as shown in Patent Document 1, a conventional white light-emitting diode includes an LED chip that is a gallium nitride compound semiconductor electrically connected to a mount lead cup through an inner lead, and contains a phosphor. A transparent resin is filled in the cup. Further, a chip-type gallium nitride-based compound semiconductor is disposed in the housing, and a transparent resin containing a phosphor is filled in the housing.

  That is, a gallium nitride-based compound semiconductor is disposed in a cup or a housing, and the upper portion and four side surfaces are filled with a phosphor such as a wavelength conversion material. For this reason, the light emitted from the upper part and the four side surfaces of the gallium nitride compound semiconductor collides with the phosphor, and secondarily emits light (wavelength converted light) from the part where the light collides. The light beam having a high energy travels to the gallium nitride compound semiconductor in the direction opposite to the emission direction and is reflected by the gallium nitride compound semiconductor. Furthermore, the light travels in the same direction as the intended emission direction and mixes with the light beam of the gallium nitride compound semiconductor itself that does not collide with the phosphor during this time, and is recognized as white light. In addition, the position where the emitted light collides with the phosphor is random, and the three-dimensional cubic space is such that the light whose wavelength is converted by colliding with the phosphor travels in the same direction as the emission direction while colliding with the phosphor again. Mix the light inside. For this reason, there are problems such as unevenness in luminance and chromaticity and the occurrence of spots.

  In the light source device disclosed in Patent Document 1, a gallium nitride compound semiconductor is disposed in a cup or a housing, and a phosphor such as a wavelength conversion material is filled on the top and four side surfaces. Yes. As a result, the phosphor is uniformly dispersed in the transparent resin. Moreover, there is a problem that it is difficult to control the dispersion amount or thickness with respect to the four side surfaces and the dispersion amount or thickness with respect to the surface.

  Furthermore, the light emitting diode used in the conventional white light source device has an excellent monochromatic peak wavelength. For this reason, for example, when a white light source device is configured using light emitting diodes that emit red, green, and blue colors, light is emitted in a state in which the light emitting diodes that emit light of each color are arranged in close proximity to each other. It was necessary to let them.

  Specifically, in order to obtain a white light source device, three types of red, green, and blue light-emitting diodes or two types of blue-green and yellow light-emitting diodes are required. That is, in order to obtain a white light source device, a plurality of types of light emitting diodes having different emission colors had to be used.

  In addition, light emitting diode chips made of semiconductors vary in color tone and brightness depending on the object. When a plurality of light emitting diodes are made of different materials, the driving power of each light emitting diode chip is different, and it is necessary to individually secure a power source.

  For this reason, it has been necessary to adjust the current supplied to each light emitting diode so that the emitted light becomes white light. In addition, the light emitting diodes used have a problem in that the color tone changes due to differences in individual temperature characteristics and changes with time. Furthermore, unless the light emitted from each light-emitting diode chip is uniformly mixed, color unevenness occurs in the emitted light, and the desired white light emission may not be obtained.

  In particular, in a light source device in which three types of semiconductor light emitting elements of red, green, and blue emission colors are provided on a substrate and used as one unit, there is a problem that the device becomes large. In addition, since there is a distance between the semiconductor light emitting elements, there is a problem that it is difficult to obtain a mixed color, and the variation in the mixed color and the screen color become rough.

  Further, in a light source device in which three types of semiconductor light emitting elements of red, green, and blue light emitting colors are provided on one lead frame or the like, when obtaining a white light emitting color, all semiconductor light emitting elements such as red, green, and blue are charged. Must be supplied. For this reason, power consumption is large, and there are problems with respect to energy saving and with respect to battery-required spaces such as portable devices.

  The present invention has been made in order to solve the above-described problems, and provides a light source device capable of obtaining clear and high-luminance emission free from color spots by effectively using light emitted from a semiconductor light-emitting element. It is to provide.

A light source device according to claim 1 of the present invention includes a semiconductor light emitting element having transparency,
Corresponding to the anode electrode and the cathode electrode of the semiconductor light emitting device, a lead frame material having a concave portion formed of an inclined surface whose inner wall surface faces the side surface of the semiconductor light emitting device and expands from the bottom surface toward the opening;
A transparent resin mixed with a wavelength conversion material,
The transparent resin is provided more uniformly than the area of the mounting surface of the semiconductor light emitting element across the lead frame material of the anode electrical wiring pattern and the lead frame material of the cathode electrical wiring pattern, and on the transparent resin The semiconductor light emitting element is bonded and fixed, the wavelength of light emitted from the back surface of the semiconductor light emitting element is converted by the wavelength conversion material, and the wavelength converted light is reflected by the lead frame material and the electrical wiring pattern portion. The reflected light and the light emitted directly from the surface of the semiconductor light emitting element are mixed and radiated from the surface direction of the semiconductor light emitting element.

  According to the light source device of the first aspect, the light radiated downward from the back surface of the semiconductor light emitting element is again reflected upward as the light whose wavelength is converted by the wavelength conversion material of the transparent resin. Further, the light radiated from the four side surfaces of the semiconductor light emitting element and proceeded downward is reflected substantially upward again as wavelength converted light by the transparent resin wavelength conversion material provided in a larger area than the semiconductor light emitting element. It is done. Then, the reflected light and the direct radiation emitted from the semiconductor light emitting element are completely mixed. Thereby, uniform mixed light can be radiated | emitted from the surface of a semiconductor light-emitting device. Further, the transparent resin is provided in an area larger than the area of the semiconductor light emitting element. As a result, when the wavelength conversion material mixed in the transparent resin is applied or printed with a certain uniform thickness, the entire mixed color tone can be controlled not by the thickness but by the area. In addition, the semiconductor light emitting element can be fixed while the transparent resin also functions as an adhesive.

  The light source device according to claim 2 is characterized in that an angle formed between the inclined surface of the recess and the bottom surface of the recess is greater than 0 degree and not greater than 45 degrees.

  According to the light source device of the second aspect, among the emitted light from the directions of the four side surfaces of the semiconductor light emitting element, the light beam traveling in the lateral direction is reflected substantially upward. A light beam traveling slightly diagonally downward is reflected substantially upward inside the semiconductor light emitting element. The light beam traveling obliquely upward is reflected substantially upward on the outside of the semiconductor light emitting element. Therefore, the emitted light from the directions of the four side surfaces of the semiconductor light emitting element can be used effectively.

  Furthermore, the light source device according to claim 3 is characterized in that a conductive material is further mixed in the transparent resin.

  According to the light source device of the third aspect, since the conductive material is further mixed into the transparent resin in addition to the wavelength conversion material, if the semiconductor light emitting element is bonded and fixed on the transparent resin, the semiconductor light emitting element itself is obtained. Can be prevented from being charged with static electricity.

  The light source device according to claim 4 is characterized in that the semiconductor light emitting element is any one of InGaAlP, InGaAlN, InGaN, and GaN based semiconductor light emitting elements.

  According to the light source device according to claim 4, any one of InGaAlP, InGaAlN, InGaN, and GaN is selectively used as a semiconductor light emitting element, and a desired mixed color is obtained by a combination with a wavelength conversion material mixed in a transparent resin. Obtainable.

  As described above, according to the light source device of the first aspect, the light emitted downward from the back surface of the semiconductor light emitting element is reflected again upward as the light whose wavelength is converted by the wavelength conversion material of the transparent resin. Further, the light radiated from the four side surfaces of the semiconductor light emitting element and proceeded downward is reflected substantially upward again as wavelength converted light by the transparent resin wavelength conversion material provided in a larger area than the semiconductor light emitting element. It is done. Then, the reflected light and the direct radiation emitted from the semiconductor light emitting element are completely mixed. Thereby, uniform mixed light can be radiated | emitted from the surface of a semiconductor light-emitting device. Further, the transparent resin is provided in an area larger than the area of the semiconductor light emitting element. As a result, when the wavelength conversion material mixed in the transparent resin is applied or printed with a certain uniform thickness, the entire mixed color tone can be controlled not by the thickness but by the area. In addition, the semiconductor light emitting element can be fixed while the transparent resin also functions as an adhesive.

  According to the light source device of the second aspect, among the emitted light from the directions of the four side surfaces of the semiconductor light emitting element, the light beam traveling in the lateral direction is reflected substantially upward. A light beam traveling slightly diagonally downward is reflected substantially upward inside the semiconductor light emitting element. The light beam traveling obliquely upward is reflected substantially upward on the outside of the semiconductor light emitting element. Therefore, the emitted light from the directions of the four side surfaces of the semiconductor light emitting element can be used effectively.

  According to the light source device of the third aspect, since the conductive material is further mixed into the transparent resin in addition to the wavelength conversion material, if the semiconductor light emitting element is bonded and fixed on the transparent resin, the semiconductor light emitting element itself is obtained. Can be prevented from being charged with static electricity.

  According to the light source device according to claim 4, any one of InGaAlP, InGaAlN, InGaN, and GaN is selectively used as a semiconductor light emitting element, and a desired mixed color is obtained by a combination with a wavelength conversion material mixed in a transparent resin. Obtainable.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
The light source device of the present invention is a light source device using a transparent InGaAlP, InGaAlN, InGaN, or GaN-based semiconductor light emitting element. This light source device uses, for example, a reflective lead frame, substrate or case as a base material. The transparent resin mixed with the wavelength conversion material has an area larger than the area of the back surface of the semiconductor light emitting element (mounting area of the semiconductor light emitting element) on the reflective pattern and the electric wiring pattern of these base materials. A semiconductor light emitting element is mounted on the transparent resin.

  FIG. 1 is a schematic perspective view of a light source device according to a first embodiment of the present invention. FIG. 2 is a partial side sectional view of the light source device according to the first embodiment.

  The light source device 1 (1A) of the first embodiment shown in FIG. 1 is of an injection or transfer mold type. The light source device 1A includes a pattern 2 (2a, 2b) and a lead terminal 6 (6a, 6b), a transparent resin 3, a semiconductor light emitting element 4, and a bonding wire (hereinafter abbreviated as a wire) 5 formed on a lead frame 21. And a mold case (hereinafter abbreviated as “case”) 7. In addition, the pattern 2 in this example includes an electric wiring pattern.

  The pattern 2 (2a, 2b) is formed on a lead frame 21 made of a phosphor bronze material or the like having a predetermined pattern shape. The lead frame 21 is made of a thin metal plate such as aluminum having electrical conductivity and elasticity. The lead frame 21 includes a pattern for mounting the semiconductor light emitting element 4, a pattern 2 (2 a, 2 b) electrically connected to the semiconductor light emitting element 4, a lead terminal 6 (6 a, 6 b), a support frame portion (not shown), and the like as one unit. As described above, it is formed by a punch press or the like so that a large number of units are arranged in parallel. The lead frame 21 is insert-molded with a case 7 made of resin.

  When the lead frame 21 is slightly inferior in reflectivity like phosphor bronze, the lead frame 21 is plated with silver or the like to improve the reflection efficiency. The purpose of improving the reflection efficiency is to reflect the outgoing light beam from the back surface 4a of the semiconductor light emitting device 4 and guide it again toward the front surface 4b of the semiconductor light emitting device 4 and the outside of the side surface 4e of the semiconductor light emitting device 4.

  The lead frame 21 holds the entire frame until processes such as mounting of a chip such as the semiconductor light emitting element 4, bonding, bonding of the wire 5, and filling of the transparent resin 3. In the lead frame 21, only the lead terminals 6 (6a, 6b) are finally left and cut and removed.

  The transparent resin 3 is obtained by mixing a wavelength conversion material made of an inorganic fluorescent pigment or an organic fluorescent dye into a colorless and transparent epoxy resin or the like. For example, when a fluorescent material (YAG) is mixed in an epoxy resin, the weight ratio between the epoxy resin and the fluorescent material is about 1: 3 to 1: 4. The transparent resin 3 can be applied on the pattern 2 or formed on the pattern 2 as a print pattern by printing fluorescent material mixed ink or the like. The transparent resin 3 is always maintained at a constant amount by coating or printing. The transparent resin 3 also functions as an adhesive that fixes the semiconductor light emitting element 4 to the pattern 2.

  The transparent resin 3 is provided between the pattern 2 exposed on the bottom surface in the concave portion 7 a of the case 7 and the back surface 4 a (surface having no electrode) of the semiconductor light emitting element 4. More specifically, as shown in FIG. 2, the transparent resin 3 is placed on the pattern 2a of the lead frame 21 on the mounting surface of the semiconductor light emitting element 4 on the pattern 2a (corresponding to the area of the back surface 4a of the semiconductor light emitting element 4). 24, the outer periphery of the semiconductor light emitting element 4 is provided in a wide area with a larger area than the mounting surface 24 of the semiconductor light emitting element 4. Thereby, the light emitted from the back surface 4a of the semiconductor light emitting element 4 can be color-converted more efficiently, and an optimum color tone can be obtained even when the amount of the wavelength conversion material by printing or the like is small.

  That is, the transparent resin 3 converts the wavelength of light emitted from the back surface 4 a of the semiconductor light emitting element 4. Then, the wavelength-converted light is emitted to the semiconductor light emitting element 4 and reflected by the lower part (the bonding surface between the pattern 2a and the transparent resin 3). This reflected light is also emitted above the semiconductor light emitting element 4. This reflected light is mixed with the light emitted directly from the semiconductor light emitting element 4.

For example, when a blue light emitting material is used as the semiconductor light emitting element 4, the transparent resin 3 is YAG (yttrium, aluminum, garnet) such as CaSiO ₃ : Pb, Mn or (Y, Gd) ₃ (Al, Ga) ₅ O _12. ) It consists of a resin mixed with a wavelength conversion material containing an orange fluorescent pigment or an orange fluorescent dye. Thereby, yellow light is obtained by projecting blue light from the semiconductor light emitting element 4 onto a resin mixed with a wavelength conversion material containing an orange fluorescent pigment or an orange fluorescent dye. And the yellow light color-converted by the wavelength conversion material of the transparent resin 3 and the blue light emitted from the semiconductor light emitting element 4 itself are mixed, so that the light emitted upward from the surface 4b of the semiconductor light emitting element 4 is emitted. It becomes white light.

  Moreover, the transparent resin 3 consists of resin which mixed the wavelength conversion material containing a red fluorescent pigment or a red fluorescent dye, when the thing of green light emission is used as the semiconductor light emitting element 4, for example. Thereby, yellow light is obtained by projecting green light from the semiconductor light emitting element 4 onto a resin mixed with a wavelength conversion material containing a red fluorescent pigment or a red fluorescent dye.

  Further, when the transparent resin 3 is a semiconductor light emitting element 4 that emits blue light, if the transparent resin 3 is formed of a resin mixed with a wavelength conversion material containing a green fluorescent pigment or a green fluorescent dye, the blue color from the semiconductor light emitting element 4 can be obtained. By projecting light onto a resin mixed with a wavelength conversion material containing a green fluorescent pigment or a green fluorescent dye, blue-green light can be obtained.

  As the transparent resin 3, a colorless transparent epoxy resin or the like mixed with a wavelength conversion material made of an inorganic fluorescent pigment or an organic fluorescent dye and a conductive material can be used. .

  In this case, the conductive material is mixed to such an extent that fillers such as silver particles do not adversely affect the fluorescent material. Further, the conductive material has a high resistance value such that the P electrode and the N electrode of the semiconductor light emitting element 4 itself are not short-circuited with a low charge.

  In addition, even if the semiconductor light emitting element 4 has a high charge, even if the semiconductor light emitting element 4 is charged with a higher potential than the applied voltage due to the addition of a small amount so as to have conductivity, the static electricity Etc. to flow to the ground. As a result, the InGaAlP, InGaAlN, InGaN, or GaN-based semiconductor light emitting element 4 itself that is particularly vulnerable to static electricity and the like is prevented from static electricity and the like.

  Specifically, the volume resistance in the fluorescent material-mixed resin portion of the conductive material is about 150 kΩ to 300 kΩ. Further, the forward resistance of the semiconductor light emitting element 4 is 165Ω and the reverse withstand voltage resistance is 2.5 MΩ. Thereby, the resistance of the conductive material is a resistance that does not leak to the semiconductor light emitting element 4 and has a resistance value lower than that of the reverse breakdown voltage resistance. Therefore, it is possible to prevent static electricity from being charged to the semiconductor light emitting element 4 itself by supplying a current to the ground.

  The semiconductor light-emitting element 4 is a light-emitting element made of a semiconductor chip of an InGaAlP-based, InGaAlN-based, InGaN-based, or GaN-based compound having a double heterostructure centering on an active layer on an n-type layer. Produced by phase growth method.

Although not shown, the substrate of the semiconductor light emitting element 4 itself is made of a transparent substrate such as Al ₂ O ₃ or InP sapphire. An active layer is disposed on the transparent substrate, and a transparent electrode is formed on the active layer. The electrode attached to the semiconductor light emitting device 4 is manufactured by forming a conductive transparent electrode made of In ₂ O ₃ , SnO ₂ , ITO, or the like by sputtering, vacuum deposition, chemical vapor deposition, or the like.

  The semiconductor light emitting element 4 has an anode electrode and a cathode electrode on one surface (upper surface in FIG. 2: surface 4b). The other surface of the semiconductor light emitting element 4 that does not have an electrode (the lower surface in FIG. 2: the back surface 4 a) is placed on and fixed to the transparent resin 3. The anode electrode and the cathode electrode of the semiconductor light emitting element 4 are bonded to the patterns 2 a and 2 b with wires 5.

  The wire 5 is made of a conductive wire such as a gold wire. The wire 5 is electrically connected between the anode electrode of the semiconductor light emitting element 4 and the pattern 2a and between the cathode electrode and the pattern 2b by a bonder.

  The lead terminal 6 (6a, 6b) is formed by directly taking out a lead frame made of a copper alloy material such as phosphor bronze having electrical conductivity and elasticity from the case 7. The lead terminal 6a is electrically connected to the anode electrode side of the semiconductor light emitting element 4 via the pattern 2a. Thereby, the lead terminal 6a is comprised so that it may be used as an anode (+) as the light source device 1 (1A) of this invention.

  The lead terminal 6b is electrically connected to the cathode electrode side of the semiconductor light emitting element 4 via the pattern 2b. Thereby, the lead terminal 6b is configured to be used as a cathode (−) as the light source device 1 (1A) of the present invention.

  The case 7 has a concave portion 7a by mixing white powder such as barium titanate into an insulating material such as liquid crystal polymer made of modified polyamide, polybutylene terephthalate, aromatic polyester or the like. Molded. In addition, the bottom surface of the concave portion 7a of the case 7 may be formed with a reflective surface by performing metal deposition such as aluminum or laminating metal foil. In this case 7, the pattern 2 is exposed on the bottom surface in the concave portion 7a.

  The case 7 efficiently reflects the light emitted from the side surface of the semiconductor light emitting element 4 with a white powder such as barium titanate having good light reflectivity and light shielding properties. Then, the case 7 emits the reflected light upward by the tapered concave surface 7b of the concave portion 7a shown in FIG. The case 7 blocks the light emitted from the light source device 1 (1A) of the present invention so as not to leak outside.

  Further, as shown in FIG. 2, the concave portion 7a of the case 7 is filled with a protective layer 8 such as a colorless and transparent epoxy resin for protecting the pattern 2, the semiconductor light emitting element 4, the wire 5, and the like. .

  In the light source device 1 (1A) configured as described above, for example, a blue light emitting semiconductor light emitting element 4 is used, and the wavelength conversion material (or wavelength conversion material and conductive material) of an orange fluorescent pigment or an orange fluorescent dye as the transparent resin 3 is used. ) Can be used to obtain clear and bright white light. That is, blue light is emitted from above the semiconductor light emitting element 4, and the blue light emitted below the semiconductor light emitting element 4 is converted into yellow light by the wavelength conversion material of the transparent resin 3. The color-converted yellow light is emitted above and below the transparent resin 3. The yellow light emitted below the transparent resin 3 is reflected by the surface of the lower pattern 2a and emitted upward. Then, the blue light emitted from the semiconductor light emitting element 4 itself and the yellow light color-converted by the wavelength conversion material of the transparent resin 3 are mixed to emit white light from above the semiconductor light emitting element 4.

  FIG. 3 is a partial sectional view of a second embodiment of the light source device according to the present invention. FIG. 4 is a locus diagram on the inclined surface of the emitted light from the semiconductor light emitting element in the light source device of the second embodiment. In addition, the same number is attached | subjected to the component equivalent to 1 A of light source devices of 1st Embodiment, and the detailed description is abbreviate | omitted.

  The light source device 1B (1) of the second embodiment shown in FIG. 3 includes a lead frame 21, a transparent resin 3, a semiconductor light emitting element 4, and a case 7, similarly to the light source device 1A of the first embodiment. .

  The light source device 1B (1) is different from the light source device 1A in that it has an inclined surface 23 at a position on the pattern 2 of the lead frame 21 facing the four side surfaces 4e of the semiconductor light emitting element 4. .

  More specifically, the inclined surface 23 is outward from the outer position to the upper side of the contour position of the back surface 4a of the semiconductor light emitting element 4 shown in FIG. 4 or the contour position of the back surface 4a of the semiconductor light emitting element 4 shown in FIG. It is inclined to spread.

  This inclined surface 23 is outside when the angle θ formed between the contour position of the back surface 4a of the semiconductor light emitting element 4 and the imaginary extension line (LL line shown by the one-dot chain line in FIG. 3) of the back surface 4a is greater than 0 ° and 45 ° or less. It is preferable to spread it upward. 3 and 4, the inclination angle θ of the inclined surface 23 is 45 °. Thereby, the emitted light from the four side surfaces 4e of the semiconductor light emitting element 4 can be efficiently reflected upward.

  The transparent resin 3 always maintains a constant amount by coating or printing. As shown in FIG. 3, the transparent resin 3 includes a semiconductor light emitting element 4 on a lead frame 21 including a mounting surface 24 of the semiconductor light emitting element 4 and a wide area with a larger area than the size of the semiconductor light emitting element 4. Is provided up to a position on the inclined surface 23 facing the side surface 4e. Thereby, the light emitted from the semiconductor light emitting element 4 can be color-converted more efficiently, and an optimum color tone can be obtained even if the amount of the wavelength converting material by printing or the like is small.

Here, the locus of the light beam will be described with reference to FIGS.
The light emitted downward from the back surface 4 a of the semiconductor light emitting element 4 is wavelength-converted by the wavelength conversion material of the transparent resin 3. A part of the wavelength-converted light is emitted to the semiconductor light emitting element 4. The other wavelength-converted light is reflected by the pattern 2 a of the lead frame 21. This reflected light is also emitted to the semiconductor light emitting element 4. This light is mixed with the light transmitted through the semiconductor light emitting element 4 and directly emitted upward from the semiconductor light emitting element 4.

  Also, as shown in FIG. 4, among the light emitted from the four side surfaces 4 e of the semiconductor light emitting element 4, the light beam L <b> 22 that has traveled downward is included in the transparent resin 3 provided on the inclined surface 23. Wavelength conversion is performed by the wavelength conversion material. The light beam L22 is reflected at a reflection angle equal to the incident angle from the four side surfaces 4e of the semiconductor light emitting element 4. This light is mixed with the light beam L1 emitted in the horizontal direction from the four side surfaces 4e of the semiconductor light emitting element 4 and the light beam L11 traveling upward.

  Here, in the case of the light source device 1B provided with the inclined surface 23, as shown in FIG. 4, the light ray L1 traveling at a right angle to the side surface 4e is reflected at 45 ° by the inclined surface 23 having an inclination of 45 °. The reflected light beam L11 travels in the upper vertical direction (perpendicular to a virtual plane parallel to the surface 4b).

  As shown in FIG. 4, for example, a light ray L22 having an emission angle β1 = 30 ° emitted downward from a light ray L1 emitted from the side surface 4e is an inclined surface 23 having an inclination of 45 ° and is transparent. The wavelength is converted by the wavelength conversion material of the resin 3 and reflected. The light beam L23 that has been wavelength-converted and reflected is emitted slightly above the semiconductor light emitting element 4.

  Similarly, with respect to the light beam L1 emitted from the side surface 4e, a light beam L32 having an emission angle β of about 30 ° emitted upward is an inclined surface 23 having an inclination of 45 °, and is formed by the wavelength conversion material of the transparent resin 3. Wavelength converted and reflected. The light beam L <b> 33 that has been wavelength-converted and reflected is slightly separated from the semiconductor light emitting element 4 and emitted above the semiconductor light emitting element 4.

  Thus, the light emitted from the four side surfaces 4e of the semiconductor light emitting element 4 is transparent resin provided on the inclined surface 23 of the pattern 2 of the lead frame 21 corresponding to the positions of the four side surfaces 4e of the semiconductor light emitting element 4. The wavelength is converted by the wavelength converting material 3. Thereafter, the light is reflected in the vertically upward direction by the inclined surface 23. Then, this reflected light is mixed with direct light from the semiconductor light emitting element 4 or reflected light reflected without being wavelength-converted by the inclined surface 23, etc., and mixed from the upper side of the semiconductor light emitting element 4 as a mixed color (for example, white light). Is emitted.

  By the way, although FIG. 1 thru | or FIG. 4 demonstrated the structure which provides the transparent resin 3 on the pattern 2 of the lead frame 21 with an area larger than the mounting surface 24 of the semiconductor light-emitting device 4, the base material with which the transparent resin 3 is provided. Instead of the lead frame 21, the substrate 11 shown in FIGS. 5 and 6 or the case 7 shown in FIGS. 7 and 8 may be used.

  FIG. 5 is a partial sectional view of a light source device according to a third embodiment of the present invention. In addition, the same number is attached | subjected to the component substantially the same as 1 A of light source devices of 1st Embodiment, and the detailed description is abbreviate | omitted.

  In the light source device 1C (1) shown in FIG. 5, the substrate 11 is used as a base material. The substrate 11 is made of a substrate such as a ceramic substrate excellent in electrical insulation, a liquid crystal polymer resin substrate, a glass cloth epoxy resin substrate, and the pattern 2 (2a, 2b) is formed on the surface.

  For example, the substrate 11 made of a ceramic substrate is mainly composed of AlO or SiO, and further composed of a compound such as ZrO, TiO, TiC, SiC, SiN and the like. This ceramic substrate is excellent in heat resistance, hardness, and strength, has a white surface, and efficiently reflects the light emitted from the semiconductor light emitting element 4.

  The substrate 11 made of a liquid crystal polymer resin or a glass cloth epoxy resin is formed by mixing or applying a white powder such as barium titanate to an insulating material such as a liquid crystal polymer or a glass cloth epoxy resin. Therefore, the light emitted from the semiconductor light emitting element 4 is efficiently reflected.

  As the substrate 11, pattern printing is performed on a laminated plate made of silicon resin, paper epoxy resin, synthetic fiber cloth epoxy resin and paper phenol resin, or a plate made of modified polyimide, polybutylene terephthalate, polycarbonate, aromatic polyester, or the like. The light emitted from the semiconductor light emitting element 4 may be reflected efficiently. In addition, it can also be set as the structure which performs metal vapor deposition, such as aluminum, affixes the film-form thing and sheet-like metal which laminated | stacked metal foil, and provides a reflective surface.

  A rectangular recess 25 is formed on the surface of the substrate 11. The bottom surface of the recess 25 forms a smooth mounting surface 24 on which the semiconductor light emitting element 4 is mounted. The mounting surface 24 has an area equal to or larger than the back surface 4 a of the semiconductor light emitting element 4. The peripheral wall surface of the recess 25 faces the four side surfaces 4e of the semiconductor light emitting element 4 and forms an inclined surface 23 similar to that of the light source device 1B of the second embodiment.

  The transparent resin 3 is formed on the concave portion 25 on the substrate 11 by coating or printing, and always maintains a constant amount. And the area of the transparent resin 3 is larger than the area of the back surface 4a of the semiconductor light emitting element 4, as shown in FIG. Moreover, the back surface 4 a of the semiconductor light emitting element 4 is bonded onto the flat surface 25 a of the recess 25 via the transparent resin 3 so as to be included in the transparent resin 3.

  Note that the light source device 1C may have a configuration in which the concave portion 25 is not formed in the substrate 11, as shown in FIG. In this case, the transparent resin 3 is provided on the substrate 11. The area of the transparent resin 3 is larger than the area of the back surface 4 a of the semiconductor light emitting element 4. Moreover, the back surface 4 a of the semiconductor light emitting element 4 is bonded onto the substrate 11 via the transparent resin 3 so as to be included in the transparent resin 3.

  FIG. 7 is a partial sectional view of a light source device according to a fourth embodiment of the present invention. In addition, the same number is attached | subjected to the component substantially the same as the light source device 1A of 1st Embodiment, and the light source device 1B of 2nd Embodiment, and the detailed description is abbreviate | omitted.

  In the light source device 1D (1) of the fourth embodiment shown in FIG. 7, the case 7 is used as a base material. A rectangular recess 25 similar to the light source device 1 </ b> C of the third embodiment is formed on the bottom surface in the recess 7 a of the case 7. The bottom surface of the recess 25 forms a smooth mounting surface 24 on which the semiconductor light emitting element 4 is mounted. The mounting surface 24 has an area equal to or larger than the back surface 4 a of the semiconductor light emitting element 4. The peripheral wall surface of the recess 25 faces the four side surfaces 4e of the semiconductor light emitting element 4 and forms an inclined surface 23 similar to that of the light source device 1B of the second embodiment.

  The transparent resin 3 is formed on the concave portion 25 of the case 7 by coating or printing, and always maintains a constant amount. The area of the transparent resin 3 is larger than the area of the back surface 4a of the semiconductor light emitting element 4 as shown in FIG. Moreover, the back surface 4 a of the semiconductor light emitting element 4 is bonded onto the flat surface 25 a of the recess 25 via the transparent resin 3 so as to be included in the transparent resin 3.

  In the light source device 1D, as shown in FIG. 8, the concave portion 25 may not be formed in the concave portion 7a of the case 7. In this case, the transparent resin 3 is provided on the flat surface 7 c of the concave portion 7 a of the case 7. The area of the transparent resin 3 is larger than the area of the back surface 4 a of the semiconductor light emitting element 4. Moreover, the back surface 4 a of the semiconductor light emitting element 4 is bonded onto the flat surface 7 c of the case 7 via the transparent resin 3 so as to be included in the transparent resin 3.

  Thus, in the light source device 1 in this example, the wavelength conversion is performed on the reflective base material (the reflective substrate 11 or the lead frame 21, the reflective pattern or the electrical wiring pattern in the case 7). The semiconductor light emitting element 4 is bonded and fixed by a transparent resin 3 mixed with a material (or a wavelength conversion material and a conductive material). Thereby, the light emitted from the surface (back surface 4a, side surface 4e) other than the front surface 4b of the semiconductor light emitting element 4 is wavelength-converted by the wavelength conversion material (or the wavelength conversion material and the conductive material) of the transparent resin 3. Then, the wavelength-converted light passes through the semiconductor light emitting element 4 again and is emitted as mixed light from the surface 4b.

  When obtaining white light, a semiconductor light emitting element 4 that emits blue light is used. In addition, a resin mixed with a wavelength conversion material (or a wavelength conversion material and a conductive material) containing an orange fluorescent pigment or an orange fluorescent dye is used as the transparent resin 3. Thereby, the blue light of the semiconductor light emitting element 4 itself is emitted above the semiconductor light emitting element 4. Then, the blue light emitted below the semiconductor light emitting element 4 is reflected again by the semiconductor light emitting element 4 as yellow light converted by the wavelength conversion material of the transparent resin 3. Furthermore, the blue light emitted above the semiconductor light emitting element 4 and the yellow light reflected by the semiconductor light emitting element 4 are completely mixed, and uniform white light is emitted from above the semiconductor light emitting element 4. As a result, if the wavelength conversion material (color conversion member) is uniformly distributed, clearer and brighter white light can be obtained.

  In particular, as shown in FIGS. 3 to 5 and 7, according to the light source device having the inclined surface 23 facing the four side surfaces 4 e of the semiconductor light emitting element 4, the emitted light from the back surface 4 a of the semiconductor light emitting element 4. And most of the emitted light from the four side surfaces 4e of the semiconductor light emitting element 4 are wavelength-converted by the wavelength conversion material of the transparent resin 3 formed on the back surface 4a and the inclined surface 23 of the semiconductor light emitting element 4, and the semiconductor light emission Reflected by the element 4. Then, white light can be obtained by mixing the blue emitted light from the front surface 4b of the semiconductor light emitting element 4 and the yellow reflected light emitted from the back surface 4a and the side surface 4e and wavelength-converted. Thereby, it is possible to obtain a light source device which is excellent in color tone and is rich in weight reduction, economy and miniaturization.

  Further, in the light source device 1 of this example described above, the original light emission color of the semiconductor light emitting element 4 that has passed through the epoxy resin portion of the transparent resin 3 and the light emission color that has been wavelength-converted by the transparent resin 3 are mixed. Thereby, the color tone shown by a chromaticity diagram etc. can be obtained with the ratio which mixes and disperses in a colorless and transparent epoxy resin, silicone resin, etc. FIG.

  For example, when light from a blue light emitting semiconductor light emitting element 4 is projected onto a transparent resin 3 mixed with an orange fluorescent pigment or an orange fluorescent dye, white light is obtained by mixing blue light and orange light. When the amount of the transparent resin 3 is large, dark orange light is obtained. When the amount of the transparent resin 3 is small, light with a deep blue color tone can be obtained. However, even if the same amount of the transparent resin 3 has a large density distribution, the amount of wavelength-converted light that returns to the semiconductor light emitting element 4 again increases. Therefore, most of the light emitted from the semiconductor light emitting element 4 becomes wavelength converted light from the surface of the transparent resin 3.

  Therefore, in the light source devices 1B, 1C, and 1D shown in FIGS. 3 to 5 and 7, the base material (case 7, substrate 11, lead frame 21) has a recess, and includes a wavelength conversion material necessary for white light. The amount of the transparent resin 3 is maintained. And the colorless and transparent epoxy resin, silicone resin, etc. exist between the particles of the wavelength conversion material of the transparent resin 3. According to this configuration, the light wavelength-converted by the transparent resin 3 reaches the bottom surface of the recess, and the reflected light from the recess passes between the particles of the wavelength conversion material of the transparent resin 3. Thereby, the reflected light can be returned to the semiconductor light emitting element 4 again so that the reflection effect is not lost.

  Incidentally, as shown in FIG. 9, if the light source device 1 having the inclined surface 23 is configured to have the pattern (electric wiring pattern) 2 on the inclined surface 23, the pattern of the anode and cathode electrodes of the semiconductor light emitting element 4 and the pattern are provided. The wire (gold wire) 5 can be easily connected to the wire 2 by a wire bonder. In the case of adopting this configuration, the transparent resin 3 is provided in the portion of the inclined surface 23 facing the side surface 4e of the semiconductor light emitting element 4, and the space of the other portion of the inclined surface 23 is utilized. Pattern 2 is positioned.

1 is a schematic perspective configuration diagram of a first embodiment of a light source device according to the present invention. It is a fragmentary sectional side view of the light source device of 1st Embodiment of FIG. It is a fragmentary sectional view of 2nd Embodiment of the light source device which concerns on this invention, and is a sectional side view of the light source device which provided the inclined surface in the lead frame. In the structure of 2nd Embodiment of the light source device which concerns on this invention, it is a figure which shows the locus | trajectory of the light ray reflected on a reflective surface after wavelength-converting with the wavelength conversion material of transparent resin. It is a fragmentary sectional side view of 3rd Embodiment of the light source device which concerns on this invention. It is a fragmentary sectional side view which shows the modification of the light source device of 3rd Embodiment of FIG. It is a fragmentary sectional side view of 4th Embodiment of the light source device which concerns on this invention. It is a fragmentary sectional side view which shows the modification of the light source device of 4th Embodiment of FIG. It is a fragmentary sectional side view which shows the example which provided the electrical wiring pattern in the inclined surface of the recessed part of the light source device which concerns on this invention.

Explanation of symbols

1 (1A, 1B, 1C, 1D) Light source device 2 (2a, 2b) Pattern 3 Transparent resin 4 Semiconductor light emitting element 4a Back surface 4b Front surface 4e Side surface 5 Wire 6 (6a, 6b) Lead terminal 7 Case 7a Concave portion 7b Concave surface 8 Protective layer 11 Substrate 21 Lead frame 23 Inclined surface 24 Mounting surface 25 Recessed portion θ Angle formed between the inclined surface and the virtual extension line of the back surface portion L1, L11, L22, L23, L32, L33

Claims (4)

A semiconductor light emitting device having transparency;
Corresponding to the anode electrode and the cathode electrode of the semiconductor light emitting device, a lead frame material having a concave portion formed of an inclined surface whose inner wall surface faces the side surface of the semiconductor light emitting device and expands from the bottom surface toward the opening;
A transparent resin mixed with a wavelength conversion material,
The transparent resin is provided more uniformly than the area of the mounting surface of the semiconductor light emitting element across the lead frame material of the anode electrical wiring pattern and the lead frame material of the cathode electrical wiring pattern, and on the transparent resin The semiconductor light emitting element is bonded and fixed, the wavelength of light emitted from the back surface of the semiconductor light emitting element is converted by the wavelength conversion material, and the wavelength converted light is reflected by the lead frame material and the electrical wiring pattern portion. Then, the reflected light and the light emitted directly from the surface of the semiconductor light emitting element are mixed and emitted from the surface direction of the semiconductor light emitting element. The light source device according to claim 1, wherein an angle formed between the inclined surface of the concave portion and the bottom surface of the concave portion is greater than 0 degree and equal to or less than 45 degrees. The light source device according to claim 1, wherein a conductive material is further mixed in the transparent resin. The light source device according to any one of claims 1 to 3, wherein the semiconductor light emitting element is made of any one of InGaAlP, InGaAlN, InGaN, and GaN-based semiconductor light emitting elements.

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