JP2000164936A - Light emitting display device - Google Patents
Light emitting display deviceInfo
- Publication number
- JP2000164936A JP2000164936A JP33589698A JP33589698A JP2000164936A JP 2000164936 A JP2000164936 A JP 2000164936A JP 33589698 A JP33589698 A JP 33589698A JP 33589698 A JP33589698 A JP 33589698A JP 2000164936 A JP2000164936 A JP 2000164936A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- semiconductor light
- resin
- display device
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体発光素子
や波長変換材料混入樹脂で被着した半導体発光素子等を
リードフレーム上に複数設け、特に静電気等に弱い青色
系発光の半導体発光素子に対してダイオードを逆極性に
並列接続し、フルカラで電気的ショックに強い半導体発
光素子の実現を可能にする発光表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a plurality of semiconductor light emitting devices and a semiconductor light emitting device coated with a resin mixed with a wavelength conversion material provided on a lead frame. The present invention relates to a light-emitting display device in which diodes are connected in parallel with opposite polarities to realize a semiconductor light-emitting device that is full-color and resistant to electric shock.
【０００２】[0002]
【従来の技術】従来のフルカラ表示させる発光表示装置
は、発光色が赤色（Ｒｅｄ）、青色（Ｂｌｕｅ）および
緑色（Ｇｒｅｅｎ）の半導体発光素子、いわゆるＲＢＧ
の三つの半導体発光素子を用いたランプを１ユニットと
するＬＥＤランプを用いたものが知られている。2. Description of the Related Art A conventional light-emitting display device for full-color display is a semiconductor light-emitting device of red (Red), blue (Blue) and green (Green), so-called RBG.
There is known an LED lamp using one of the above three semiconductor light emitting elements as a unit.
【０００３】また、発光色が赤色（Ｒｅｄ）、青色（Ｂ
ｌｕｅ）および緑色（Ｇｒｅｅｎ）の半導体発光素子の
三つの半導体発光素子を一つのリードフレーム等に設け
たフルカラの発光表示装置も知られている。[0003] The emission color is red (Red), blue (B
A full-color light-emitting display device in which three semiconductor light-emitting elements, ie, a blue light-emitting element and a green light-emitting element, are provided on a single lead frame or the like is also known.
【０００４】さらに、半導体発光素子自身の発光色から
他の発光色を得るため、例えば特開平７−９９３４５号
公報に開示されているように、リードフレームのカップ
状に形成した底部上に半導体発光素子を載置し、カップ
内部に半導体発光素子の発光波長を他の波長に変換する
蛍光物質を含有した樹脂で包囲して異なる発光色を得る
発光ダイオードが知られている。Further, in order to obtain another emission color from the emission color of the semiconductor light emitting element itself, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-99345, a semiconductor light emitting device is provided on the bottom of a lead frame formed in a cup shape. 2. Description of the Related Art There is known a light emitting diode in which an element is placed and surrounded by a resin containing a fluorescent substance for converting the emission wavelength of a semiconductor light emitting element into another wavelength inside a cup, thereby obtaining different emission colors.
【０００５】また、同様に半導体発光素子の発光波長を
他の波長に変換してＬＥＤランプ単体で白色の発光色を
得るため、青色発光の半導体発光素子等を波長変換材料
が含有した樹脂全体でランプ形状に包囲したものも知ら
れている。Similarly, in order to convert the emission wavelength of the semiconductor light emitting element to another wavelength to obtain a white light emission color with the LED lamp alone, the blue light emitting semiconductor light emitting element and the like are made of the entire resin containing the wavelength conversion material. A lamp surrounded by a lamp is also known.
【０００６】[0006]
【発明が解決しようとする課題】従来のフルカラ表示さ
せる発光表示装置は、赤色、青色および緑色発光色の半
導体発光素子を３つ用いたランプを１ユニットとして使
用する場合には、発光表示装置が大型化なってしまうと
いう課題がある。しかも、互いの半導体発光素子間の距
離があるので、混合色が得にくく、混合色のばらつきや
画面色が粗くなってしまう課題もある。A conventional light-emitting display device for full-color display uses a lamp using three semiconductor light-emitting elements of red, blue and green colors as one unit. There is a problem that it becomes large. Moreover, since there is a distance between the semiconductor light emitting elements, it is difficult to obtain a mixed color, and there is also a problem that the mixed color varies and the screen color becomes coarse.
【０００７】また、従来の発光色が赤色（Ｒｅｄ）、青
色（Ｂｌｕｅ）および緑色（Ｇｒｅｅｎ）の半導体発光
素子の三つの半導体発光素子を一つのリードフレーム等
に設けたフルカラの発光表示装置では、白色の発光色を
得る場合に赤色、青色および緑色等全ての半導体発光素
子に電荷を供給しなければ成らないので、電力消費が大
きく、省エネルギに対する課題や携帯機器等のバッテリ
必要スペースに対する課題がある。Further, in a conventional full color light emitting display device in which three semiconductor light emitting elements of red (Red), blue (Blue) and green (Green) are provided on one lead frame or the like, In order to obtain a white light emission color, electric charges must be supplied to all the semiconductor light emitting elements such as red, blue and green, so that the power consumption is large, and there is a problem of energy saving and a problem of a space required for a battery such as a portable device. is there.
【０００８】さらに、特開平７−９９３４５号公報に開
示されているように、リードフレームのカップ状に形成
した底部上に載置した半導体発光素子に波長変換する蛍
光物質を含有した樹脂で包囲して異なる発光色を得る発
光ダイオードは、リードフレーム材料自身でカップを形
成するため、複数の電気的パターンが作成できず、単一
の電極となってしまう。その結果、複数の半導体発光素
子の載置ができず、さらに単色の半導体発光素子のみの
ために混合色が得にくい課題がある。Further, as disclosed in Japanese Patent Application Laid-Open No. 7-99345, a semiconductor light emitting device mounted on a cup-shaped bottom of a lead frame is surrounded by a resin containing a fluorescent substance for wavelength conversion. A light emitting diode that obtains a different emission color by forming a cup with the lead frame material itself cannot form a plurality of electrical patterns and becomes a single electrode. As a result, there is a problem that a plurality of semiconductor light emitting elements cannot be mounted, and it is difficult to obtain a mixed color because only a single color semiconductor light emitting element is used.
【０００９】また、同様に半導体発光素子の発光波長を
他の波長に変換してＬＥＤランプ単体で白色の発光色を
得るために青色発光の半導体発光素子等を波長変換材料
が含有した樹脂全体でランプ形状に包囲した構成では、
波長変換材料の使用量が多くなってしまうとともに波長
変換材料の分散分布の安定性に課題がある。Similarly, in order to convert the emission wavelength of the semiconductor light emitting element to another wavelength and obtain a white light emission color by the LED lamp alone, the entire resin containing the blue light emitting semiconductor light emitting element or the like containing the wavelength conversion material. In the configuration surrounded by the lamp shape,
As the amount of the wavelength conversion material used increases, there is a problem in the stability of the dispersion distribution of the wavelength conversion material.
【００１０】さらに、ＩｎＧａＡｌＰ系、ＩｎＧａＡｌ
Ｎ系、ＩｎＧａＮ系等からなる青色発光色の半導体発光
素子は、発光する活性層が静電気等の電気的ショックに
より破壊する課題がある。Further, InGaAlP, InGaAl
A semiconductor light-emitting device of a blue emission color such as an N-based or InGaN-based semiconductor has a problem that a light-emitting active layer is broken by an electric shock such as static electricity.
【００１１】本発明はこのような課題を解決するためな
されたもので、複数の半導体発光素子をリードフレーム
上に載置し、さらに白色光を得るために３つのＲＧＢ半
導体発光素子を用いずに青色発光の半導体発光素子に波
長変換材料を混入した樹脂で被着して白色光を得るとと
もにダイオードを逆極性に並列接続して静電気等に対し
回避した取扱が容易で省エネに優れたフルカラの表示が
行える発光表示装置を提供することにある。The present invention has been made to solve such a problem, and a plurality of semiconductor light emitting devices are mounted on a lead frame, and three RGB light emitting devices are not used to obtain white light. Full-color display that is easy to handle, avoids static electricity, etc. by connecting a diode in parallel with a reverse polarity to obtain white light by attaching a blue light emitting semiconductor light emitting element to a resin mixed with a wavelength conversion material, and saving energy. It is an object of the present invention to provide a light emitting display device capable of performing the above.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するため
請求項１に係る発光表示装置は、複数の半導体発光素子
の少なくとも１つ以上が波長変換材料を混入した樹脂で
被着されるとともに、ダイオードが逆極性に並列接続さ
れることを特徴とする。According to a first aspect of the present invention, there is provided a light emitting display device, wherein at least one of a plurality of semiconductor light emitting elements is coated with a resin mixed with a wavelength conversion material. The diode is connected in parallel with the opposite polarity.
【００１３】請求項１に係る発光表示装置は、複数の半
導体発光素子の少なくとも１つ以上が波長変換材料を混
入した樹脂で被着するとともに、ダイオードを逆極性に
並列接続するので、ｎ層からなるカソード側に静電気等
の高電荷が加わっても逆極性に並列接続した整流素子に
流れることによって半導体発光素子に電流が流れない。In the light-emitting display device according to the first aspect, at least one of the plurality of semiconductor light-emitting elements is covered with a resin mixed with a wavelength conversion material, and the diodes are connected in parallel with opposite polarities. Even if a high charge such as static electricity is applied to the cathode side, the current flows through the rectifier connected in parallel with the opposite polarity, so that no current flows through the semiconductor light emitting element.
【００１４】また、請求項２に係る発光表示装置は、複
数の半導体発光素子の少なくとも１つ以上が波長変換材
料を混入した樹脂で被着され、さらに透明樹脂でレンズ
状に被包形成されることを特徴とする。According to a second aspect of the present invention, in the light emitting display device, at least one of the plurality of semiconductor light emitting elements is covered with a resin mixed with a wavelength conversion material, and further formed in a lens shape with a transparent resin. It is characterized by the following.
【００１５】請求項２に係る発光表示装置は、複数の半
導体発光素子の少なくとも１つ以上を波長変換材料を混
入した樹脂で被着し、さらに透明樹脂でレンズ状に被包
形成したので、少ない数の半導体発光素子でフルカラや
白色光を得られるとともに出射光を集光し輝度を高くす
ることができる。In the light-emitting display device according to the second aspect, at least one of the plurality of semiconductor light-emitting elements is covered with a resin mixed with a wavelength conversion material, and furthermore is formed in a lens shape with a transparent resin, so that a small number of semiconductor light-emitting elements are formed. Full color or white light can be obtained with a number of semiconductor light emitting elements, and emitted light can be collected to increase the luminance.
【００１６】さらに、請求項３に係る発光表示装置は、
複数の半導体発光素子の少なくとも１つ以上が波長変換
材料を混入した樹脂で被着され、さらに透明樹脂でレン
ズ状に被包形成されるとともに、底部に透明樹脂が充填
されることを特徴とする。Further, the light emitting display device according to claim 3 is
At least one of the plurality of semiconductor light emitting elements is covered with a resin mixed with a wavelength conversion material, is further formed in a lens shape with a transparent resin, and is filled with a transparent resin at the bottom. .
【００１７】請求項３に係る発光表示装置は、複数の半
導体発光素子の少なくとも１つ以上を波長変換材料を混
入した樹脂で被着し、さらに透明樹脂でレンズ状に被包
形成するとともに、底部を透明樹脂で充填したので、少
ない数の半導体発光素子でフルカラや白色光を得られる
とともに、出射光を集光して輝度を上げ、さらに発光表
示装置の表面での輝度を均一にできる。According to a third aspect of the present invention, in the light emitting display device, at least one of the plurality of semiconductor light emitting elements is covered with a resin mixed with a wavelength conversion material, and further formed as a lens with a transparent resin. Is filled with a transparent resin, a full color or white light can be obtained with a small number of semiconductor light emitting elements, the emitted light can be condensed to increase the luminance, and the luminance on the surface of the light emitting display device can be made uniform.
【００１８】また、請求項４に係る発光表示装置は、複
数の半導体発光素子の少なくとも１つ以上が波長変換材
料を混入した樹脂で被着されるとともに、ダイオードが
逆極性に並列接続され、さらに底部に透明樹脂が充填さ
れることを特徴とする。According to a fourth aspect of the present invention, in the light emitting display device, at least one of the plurality of semiconductor light emitting elements is covered with a resin mixed with a wavelength conversion material, and the diodes are connected in parallel with opposite polarities. The transparent resin is filled in the bottom part.
【００１９】請求項４に係る発光表示装置は、複数の半
導体発光素子の少なくとも１つ以上を波長変換材料を混
入した樹脂を被着するとともに、ダイオードを逆極性に
並列接続し、さらに底部を透明樹脂で充填したので、少
ない数の半導体発光素子でフルカラや白色光を得られる
とともに、出射光を集光して輝度を上げ、さらに発光表
示装置の表面での輝度を均一にでき、またダイオード等
をリードフレームの凹状底部へより強く固定するととも
に、素子等を保護する。According to a fourth aspect of the present invention, at least one of the plurality of semiconductor light emitting elements is coated with a resin mixed with a wavelength conversion material, diodes are connected in parallel with opposite polarities, and the bottom is transparent. Filled with resin, it is possible to obtain full color or white light with a small number of semiconductor light emitting elements, to condense outgoing light to increase luminance, and to further uniform the luminance on the surface of the light emitting display device, Is firmly fixed to the concave bottom of the lead frame and at the same time protects the elements and the like.
【００２０】[0020]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づき説明する。なお、本発明は、半導体発光素
子や波長変換材料を混入した樹脂で被着した半導体発光
素子等をリードフレーム上に複数載置し、各種の発光色
を得るとともにダイオードを逆極性に並列接続して静電
気等に対し回避し、取扱が容易で省エネに優れたフルカ
ラ表示が可能な発光表示装置を提供するものである。Embodiments of the present invention will be described below with reference to the accompanying drawings. In the present invention, a plurality of semiconductor light emitting elements, semiconductor light emitting elements and the like, which are coated with a resin mixed with a wavelength conversion material, are mounted on a lead frame to obtain various emission colors and connect diodes in parallel with opposite polarities. The present invention provides a light-emitting display device capable of performing a full-color display which is easy to handle and saves energy by avoiding static electricity and the like.
【００２１】図１は本発明に係る発光表示装置の実施の
形態を示す全体斜視図、図２は図１の発光表示装置の断
面図である。図１及び図２に示すように、本実施の形態
の発光表示装置１は、インジェクションモールド成型さ
れたもので、リードフレーム２、モールドケース３、半
導体発光素子４、波長変換材料混入樹脂５、レンズ状透
明樹脂６、ダイオード７、ワイヤ８、リード端子９およ
び出光窓１０から構成されている。FIG. 1 is an overall perspective view showing an embodiment of a light emitting display according to the present invention, and FIG. 2 is a sectional view of the light emitting display of FIG. As shown in FIGS. 1 and 2, the light emitting display device 1 of the present embodiment is formed by injection molding, and includes a lead frame 2, a mold case 3, a semiconductor light emitting element 4, a resin 5 mixed with a wavelength conversion material, a lens. It comprises a transparent resin 6, a diode 7, a wire 8, a lead terminal 9, and a light exit window 10.
【００２２】リードフレーム２は、導電性および弾性力
のある燐青銅やアルミニウム等の金属薄板からなり、半
導体発光素子４やダイオード７を載置する複数の載置パ
ターンや電気的接続する配線パターン２ａ，２ｂ等と複
数のリード端子９および図示しない支持枠部等を１ユニ
ットとして、多数ユニットを並設されるようにパンチプ
レス等により形成される。The lead frame 2 is made of a conductive and elastic thin metal plate such as phosphor bronze or aluminum, and has a plurality of mounting patterns on which the semiconductor light emitting elements 4 and the diodes 7 are mounted and a wiring pattern 2a for electrical connection. , 2b, etc., a plurality of lead terminals 9, and a support frame (not shown) are formed as one unit by a punch press or the like so that many units are arranged in parallel.
【００２３】リードフレーム２は図示しない金型によっ
て面対称に挟み込まれ、載置パターンや配線パターン２
ａ，２ｂが表出して凹なる底部を形成するようにリード
フレーム２にモールドケース３がインサートモールド成
形される。The lead frame 2 is sandwiched in plane symmetry by a mold (not shown), and
A mold case 3 is insert-molded on the lead frame 2 so that a and 2b are exposed to form a concave bottom.
【００２４】なお、リードフレーム２は、モールドケー
ス３のインサートモールド成形、半導体発光素子４やダ
イオード７等のチップのマウント、ボンディング、ワイ
ヤ８のボンディング、波長変換材料混入樹脂５の被着、
レンズ状透明樹脂６の被包形成、レンズ状透明樹脂６お
よび凹状底部への透明樹脂の充填等の工程まで全体のフ
レームを保持し、最終的にはリード端子９のみを残して
切断除去される。The lead frame 2 is formed by insert molding of a mold case 3, mounting chips such as a semiconductor light emitting element 4 and a diode 7, bonding, bonding wires 8, bonding a resin 5 mixed with a wavelength conversion material, and the like.
The entire frame is held until processes such as encapsulation of the lens-shaped transparent resin 6 and filling of the lens-shaped transparent resin 6 and the concave bottom with the transparent resin, and are finally cut and removed leaving only the lead terminals 9. .
【００２５】モールドケース３は、変成ポリアミド、ポ
リブチレンテレフタレート、ナイロン４６や芳香族系ポ
リエステル等からなる液晶ポリマなどの絶縁性の有る材
料に、光の反射性を良くするためにチタン酸バリウム等
の白色粉体を混入させたものを加熱して圧力を加え、射
出成型により形成される。The mold case 3 is made of an insulating material such as a liquid crystal polymer made of modified polyamide, polybutylene terephthalate, nylon 46, aromatic polyester or the like, and a barium titanate or the like for improving light reflectivity. It is formed by injection molding by heating and applying pressure by mixing white powder.
【００２６】半導体発光素子４，４ｂは、ＧａＰ、Ｇａ
Ａｓ、ＧａＮ、ＳｉＣ、ＧａＡｓＰ、ＧａＡｌＡｓ、Ｉ
ｎＧａＮ、ＩｎＧａＡｌＰ、ＩｎＧａＡｌＮ等の化合物
半導体などからなり、各色を発光する。The semiconductor light emitting devices 4 and 4b are GaP, Ga
As, GaN, SiC, GaAsP, GaAlAs, I
It is made of a compound semiconductor such as nGaN, InGaAlP, and InGaAlN, and emits each color.
【００２７】特に青色発光にはＩｎＧａＡｌＰ系、Ｉｎ
ＧａＡｌＮ系、ＩｎＧａＮ系などの半導体発光素子が用
いられ、Ｇａの添加量によって黄緑色から赤色や青色か
ら黄緑色のように、ある範囲において各種の発光色が得
られる。In particular, for blue light emission, InGaAlP-based, In
A semiconductor light-emitting element such as a GaAlN-based or InGaN-based semiconductor is used, and various emission colors can be obtained in a certain range such as yellow-green to red or blue to yellow-green depending on the amount of Ga added.
【００２８】なお、図１の例では、波長変換材料混入樹
脂５で被着した素子を半導体発光素子４とし、波長変換
材料混入樹脂５を被着せずに発光色が発光素子のままの
素子を半導体発光素子４ｂとして区別している。In the example shown in FIG. 1, the element coated with the wavelength conversion material-mixed resin 5 is referred to as a semiconductor light-emitting element 4, and the element whose luminescent color is a light-emitting element without the wavelength conversion material-mixed resin 5 is used. It is distinguished as the semiconductor light emitting element 4b.
【００２９】半導体発光素子４，４ｂは、これら素子の
チップをパターン２ａ，２ｂ等にダイボンダで載置し、
フィラを樹脂に分散させた銀ペースト等により電気的接
続および機械的接続が行われ、対電極側にワイヤーボン
ディングして電気的接続が行われる。The semiconductor light-emitting elements 4 and 4b are mounted with chips of these elements on the patterns 2a and 2b by a die bonder.
Electrical connection and mechanical connection are performed by a silver paste or the like in which a filler is dispersed in resin, and electrical connection is performed by wire bonding to the counter electrode side.
【００３０】波長変換材料混入樹脂５は、無機系の蛍光
顔料や有機系の蛍光染料等からなり、無色透明なエポキ
シ樹脂やシリコーン樹脂等に混合分散させたものであ
り、半導体発光素子４を覆うように被着される。これに
より、半導体発光素子４の発光色を他の異なる色に変換
している。波長変換材料混入樹脂５は、例えば緑色発光
の半導体発光素子４からの光を赤色蛍光顔料や赤色蛍光
染料を混入した樹脂に投射すると黄色系の光が得られ、
青色発光の半導体発光素子４からの光を緑色蛍光顔料や
緑色蛍光染料を混入した樹脂に投射すると青緑色系の光
が得られる。The wavelength conversion material-mixed resin 5 is made of an inorganic fluorescent pigment or an organic fluorescent dye, and is mixed and dispersed in a colorless and transparent epoxy resin, silicone resin, or the like, and covers the semiconductor light emitting element 4. So that it is adhered. Thereby, the emission color of the semiconductor light emitting element 4 is converted into another different color. For example, when the wavelength conversion material-mixed resin 5 projects light from the green light emitting semiconductor light emitting element 4 onto a resin mixed with a red fluorescent pigment or a red fluorescent dye, yellow light is obtained,
When light from the blue light emitting semiconductor light emitting element 4 is projected onto a resin mixed with a green fluorescent pigment or a green fluorescent dye, blue-green light is obtained.
【００３１】なお、赤色蛍光顔料としては、例えばＹ2
Ｏ3 ：ＥｕやＹ（Ｐ，Ｖ）Ｏ4 ：Ｅｕ等がある。また、
緑色蛍光顔料としては、例えばＺｎ2 ＳｉＯ4 ：Ｍｎ等
がある。さらに、橙色蛍光顔料としては、ＣａＳｉ
Ｏ3 ：Ｐｂ，ＭｎやＹ3 Ａｌ5 Ｏ 12系等がある。As the red fluorescent pigment, for example, YTwo
OThree: Eu or Y (P, V) OFour: Eu and the like. Also,
As the green fluorescent pigment, for example, ZnTwoSiOFour: Mn, etc.
There is. Further, as the orange fluorescent pigment, CaSi
OThree: Pb, Mn or YThreeAlFiveO 12System.
【００３２】また、波長変換材料混入樹脂５は、半導体
発光素子４等の発光した光の吸収により励起されエネル
ギ準位の低い基底状態からエネルギ準位の高い励起状態
に遷移し、基底状態に戻る時に電子エネルギを振動や回
転等の熱エネルギに変化することなく光として放出する
物である。すなわち、波長変換材料混入樹脂５は、一般
にストークスの法則の様に、半導体発光素子４の発光波
長よりも波長変換材料からの発光波長のほうが長い発光
や２段階的な電子励起が励起過程に含まれ、反ストーク
スな半導体発光素子４の発光波長よりも波長変換材料か
らの発光波長のほうが短い発光をも含まれる。The resin 5 mixed with the wavelength conversion material is excited by absorption of light emitted from the semiconductor light emitting element 4 or the like, and transitions from a ground state having a low energy level to an excited state having a high energy level, and returns to the ground state. It is a substance that emits electron energy as light without changing it into heat energy such as vibration or rotation. That is, the resin 5 mixed with the wavelength conversion material generally includes, as in Stokes' law, emission in which the emission wavelength from the wavelength conversion material is longer than the emission wavelength of the semiconductor light emitting element 4 and two-step electronic excitation in the excitation process. This also includes light emission whose emission wavelength from the wavelength conversion material is shorter than the emission wavelength of the anti-Stokes semiconductor light emitting element 4.
【００３３】さらに、波長変換材料混入樹脂５は、無色
透明なエポキシ樹脂やシリコーン樹脂等に混合分散する
比率によって、エポキシ樹脂部分を透過した半導体発光
素子４本来の色調と波長変換材料で波長変換された色調
との混合によって色度図等に示される色調が得られる。Further, the wavelength conversion material-mixed resin 5 is wavelength-converted by the intrinsic color tone and wavelength conversion material of the semiconductor light emitting element 4 that has passed through the epoxy resin portion, according to the ratio of being mixed and dispersed in a colorless and transparent epoxy resin or silicone resin. The color tone shown in the chromaticity diagram and the like is obtained by mixing with the color tone.
【００３４】例えば、青色発光の半導体発光素子４から
の光を橙色蛍光顔料や橙色蛍光染料を混入した波長変換
材料混入樹脂５に投射すると、青色光と橙色光との混合
によって白色光が得られ、波長変換材料が多い場合には
橙色の色調が濃い光が得られ、波長変換材料が少ない場
合には青色の色調が濃い光が得られる。For example, when light from a blue light emitting semiconductor light emitting element 4 is projected onto a wavelength conversion material mixed resin 5 mixed with an orange fluorescent pigment or an orange fluorescent dye, white light is obtained by mixing the blue light and the orange light. When the amount of the wavelength converting material is large, light with a deep orange color tone is obtained, and when the amount of the wavelength converting material is small, light with a deep blue color tone is obtained.
【００３５】レンズ状透明樹脂６は、透明なエポキシ樹
脂等からなり、半導体発光素子４に被着した波長変換材
料混入樹脂５の表面にレンズ状に被包形成される。この
レンズ状透明樹脂６は、半導体発光素子４自身の発光色
と波長変換された発光色とを集光して白色光として光束
を出射する。The lens-shaped transparent resin 6 is made of a transparent epoxy resin or the like, and is formed in a lens shape on the surface of the wavelength conversion material-mixed resin 5 attached to the semiconductor light emitting element 4. The lens-shaped transparent resin 6 condenses the emission color of the semiconductor light-emitting element 4 itself and the emission color whose wavelength has been converted, and emits a light beam as white light.
【００３６】ダイオード７は、半導体発光素子４に対し
て逆極性に並列接続するために、カソード電極側がパタ
ーン２ｂ上に載置されダイボンドされており、アノード
電極側からボンディングワイヤ８でパターン２ａにワイ
ヤーボンディングされている。これにより、静電気等の
電気的ショックによって半導体発光素子４の絶縁層や発
光を行う活性層を中心とした部分の絶縁破壊を回避して
いる。In order to connect the diode 7 in parallel with the semiconductor light emitting element 4 in reverse polarity, the cathode electrode side is mounted on the pattern 2b and die-bonded. Bonded. This avoids dielectric breakdown of the insulating layer of the semiconductor light emitting element 4 and the portion around the active layer for emitting light due to electric shock such as static electricity.
【００３７】また、特にＩｎＧａＡｌＰ系、ＩｎＧａＡ
ｌＮ系、ＩｎＧａＮ系の化合物の半導体発光素子等は静
電気等に弱いが、これら対象半導体発光素子以外でも近
年半導体発光素子の微少化が進むにつれ、これらダイオ
ード（整流素子）７の逆極性に並列接続することにより
静電気による絶縁破壊を回避する事が可能である。In particular, InGaAlP-based, InGaAs
1N-based and InGaN-based compound semiconductor light-emitting devices are susceptible to static electricity and the like. By doing so, it is possible to avoid dielectric breakdown due to static electricity.
【００３８】ワイヤ８は金線等からなり、半導体発光素
子４等のアノード電極とパターン２ｂ等とをボンダによ
って電気的に接続している。同様にダイオード７のアノ
ード電極とパターン２ａとをボンダによって電気的に接
続している。The wire 8 is made of a gold wire or the like, and electrically connects an anode electrode of the semiconductor light emitting element 4 or the like to the pattern 2b or the like by a bonder. Similarly, the anode electrode of the diode 7 and the pattern 2a are electrically connected by a bonder.
【００３９】リード端子９は、導電性および弾性力のあ
る燐青銅等の銅合金材またはアルミニウム等からなるリ
ードフレームをモールドケース３から直接取り出して形
成される。リード端子９は、例えばパターン２ｂと電気
的に接続されて半導体発光素子４のアノード電極側と等
しく、本発明の発光表示装置としての陽極（＋）として
使用されるように構成される。同様に、パターン２ａと
電気的に接続されたリード端子は半導体発光素子４のカ
ソード電極側と等しく、陰極（−）として使用されるよ
うに構成される。The lead terminal 9 is formed by directly taking out a lead frame made of a copper alloy material such as phosphor bronze having conductivity and elasticity or aluminum or the like from the mold case 3. The lead terminal 9 is electrically connected to the pattern 2b, for example, and is equal to the anode electrode side of the semiconductor light emitting element 4, and is configured to be used as an anode (+) in the light emitting display of the present invention. Similarly, the lead terminal electrically connected to the pattern 2a is equal to the cathode electrode side of the semiconductor light emitting element 4, and is configured to be used as a cathode (-).
【００４０】出光窓１０は、モールドケース３の開口部
であり、キャスティングタイプの場合には、無色透明な
エポキシ樹脂等を充填したフラットな面やレンズ状の凸
面からなり、目的に応じてエポキシ樹脂に光散乱剤を混
入させ、モールドケース３の開口部表面での輝度を均一
にするとともに、半導体発光素子４，４ｂ、ダイオード
７、ワイヤ８および波長変換材料混入樹脂５やレンズ状
透明樹脂６等全体も固定させている。The light exit window 10 is an opening of the mold case 3. In the case of a casting type, the light exit window 10 has a flat surface or a lens-like convex surface filled with a colorless and transparent epoxy resin or the like. A light scattering agent is mixed into the mold case 3 to make the brightness on the surface of the opening of the mold case 3 uniform, and the semiconductor light emitting elements 4, 4b, the diode 7, the wire 8, the wavelength conversion material-mixed resin 5, the lens-shaped transparent resin 6, and the like. The whole is also fixed.
【００４１】また、レンズ状透明樹脂６によって集光作
用を高める場合には、レンズ状透明樹脂６の屈折率より
も低屈折率のエポキシ樹脂等の異屈折率材を用いてより
効率を上げることが可能である。When the light-collecting action is enhanced by the lens-shaped transparent resin 6, the efficiency is further increased by using a different refractive index material such as an epoxy resin having a lower refractive index than the refractive index of the lens-shaped transparent resin 6. Is possible.
【００４２】さらに、本発明の発光表示装置の使用目的
による機械的、化学的特性仕様によって、シリコーン樹
脂をモールドケース３の開口部に充填しても良い。Further, the opening of the mold case 3 may be filled with a silicone resin according to the mechanical and chemical characteristics specifications according to the intended use of the light emitting display device of the present invention.
【００４３】また、モールドケース３内部に樹脂等を充
填しないエアギャップタイプの場合には、モールドケー
ス３内部側面を傾斜させ、反射効率が最大になる様に傾
斜角度を設計する。In the case of an air gap type in which the inside of the mold case 3 is not filled with resin or the like, the inside side surface of the mold case 3 is inclined to design the inclination angle so that the reflection efficiency is maximized.
【００４４】さらに、モールドケース３の開口部表面で
の輝度を均一にするために散乱フィルムやコントラスト
を向上するために光学フィルタを用いる場合もある。Further, in some cases, a scattering film is used to make the brightness on the surface of the opening of the mold case 3 uniform, and an optical filter is used to improve the contrast.
【００４５】[0045]
【実施例】次に、本発明に係る発光表示装置の実施例に
ついて説明する。 （実施例１）青色発光の半導体発光素子に対して逆電圧
を印加した場合、半導体発光素子単体の構成では、５回
の試験に於いて印加電圧３００Ｖ以上で全て不良となっ
た。また、半導体発光素子に逆接続にダイオードを挿入
した場合には、５回の試験に於いて印加電圧５０００Ｖ
でも絶縁破壊を示さなかった。Next, an embodiment of the light emitting display device according to the present invention will be described. (Example 1) When a reverse voltage was applied to a blue light emitting semiconductor light emitting device, all of the semiconductor light emitting devices failed when the applied voltage was 300 V or more in five tests. When a diode is inserted in the semiconductor light emitting device in reverse connection, the applied voltage is 5000 V in five tests.
However, it did not show dielectric breakdown.
【００４６】（実施例２）ＹＡＧ（イットリウム・アル
ミニウム・ガーネット）系の蛍光顔料である（Ｙ，Ｇ
ｄ）3 （Ａｌ，Ｇａ）5 Ｏ12：Ｃｅの（Ｙ，Ｇｄ）
3 （Ａｌ，Ｇａ）5 Ｏ12とＣｅとの原子量比を各種変
え、この比率が１：４の時に、さらに蛍光顔料の平均粒
径を８μｍ程度にした物を無色透明なエポキシ樹脂と重
量比１：１に調整した波長変換材料混入樹脂による橙色
の発光色と青色発光の半導体発光素子の発光色とにより
白色の光を得ることができた。(Example 2) YAG (yttrium aluminum garnet) based fluorescent pigment (Y, G
d) 3 (Al, Ga) 5 O 12: the Ce (Y, Gd)
3 (Al, Ga) changed 5 O 12 with various atomic weight ratio of Ce, the ratio is 1: when the 4, further colorless transparent epoxy resin in a weight ratio of the ones you order of 8μm average particle diameter of the fluorescent pigment White light could be obtained from the orange light emission color of the resin mixed with the wavelength conversion material adjusted to 1: 1 and the light emission color of the blue light emitting semiconductor light emitting element.
【００４７】なお、上記実施例に青色発光の半導体発光
素子としては、豊田合成（株）のＥ１Ｃ００−１ＢＡ０
１を用いた。In the above embodiment, the semiconductor light emitting device emitting blue light is E1C00-1BA0 manufactured by Toyoda Gosei Co., Ltd.
1 was used.
【００４８】[0048]
【発明の効果】以上のように、請求項１に係る発光表示
装置は、複数の半導体発光素子の少なくとも１つ以上を
波長変換材料を混入した樹脂を被着するとともに、ダイ
オードを逆極性に並列接続するので、ｎ層からなるカソ
ード側に静電気等の高電荷が加わっても逆極性に並列接
続した整流素子に流れることによって半導体発光素子に
電流が流れない。これにより、半導体発光素子の絶縁破
壊を回避し発光表示装置としての歩留りの向上が図れ
る。As described above, in the light emitting display device according to the first aspect, at least one of the plurality of semiconductor light emitting elements is coated with a resin mixed with a wavelength conversion material, and the diodes are arranged in parallel with the opposite polarity. Since the connection is made, even if a high charge such as static electricity is applied to the cathode side composed of the n-layer, the current flows through the rectifier connected in parallel with the opposite polarity, so that no current flows through the semiconductor light emitting element. Thereby, the dielectric breakdown of the semiconductor light emitting element can be avoided and the yield as the light emitting display device can be improved.
【００４９】また、請求項２に係る発光表示装置は、複
数の半導体発光素子の少なくとも１つ以上を波長変換材
料を混入した樹脂で被着し、さらに透明樹脂でレンズ状
に被包形成したので、少ない数の半導体発光素子でフル
カラや白色光を得られるとともに、出射光を集光して輝
度を高くすることができ、省エネに対応できる。In the light-emitting display device according to the second aspect, at least one of the plurality of semiconductor light-emitting elements is covered with a resin mixed with a wavelength conversion material, and is further formed in a lens shape with a transparent resin. In addition, full color or white light can be obtained with a small number of semiconductor light emitting elements, and emitted light can be condensed to increase the luminance, thereby achieving energy saving.
【００５０】さらに、請求項３に係る発光表示装置は、
複数の半導体発光素子の少なくとも１つ以上を波長変換
材料を混入した樹脂で被着し、さらに透明樹脂でレンズ
状に被包形成するとともに、底部を透明樹脂で充填した
ので、少ない数の半導体発光素子でフルカラや白色光を
得られるとともに、出射光を集光して輝度を上げ、さら
に発光表示装置の表面での輝度を均一にできる。しか
も、消費電力の低減等コストパフォーマンスに優れた発
光表示装置を提供できる。Further, the light emitting display device according to claim 3 is
At least one of the plurality of semiconductor light-emitting elements is covered with a resin mixed with a wavelength conversion material, and further, is formed in a lens shape with a transparent resin, and the bottom is filled with a transparent resin. A full color or white light can be obtained by the element, the emitted light can be collected, the luminance can be increased, and the luminance on the surface of the light emitting display device can be made uniform. In addition, a light-emitting display device with excellent cost performance such as reduction in power consumption can be provided.
【００５１】また、請求項４に係る発光表示装置は、複
数の半導体発光素子の少なくとも１つ以上を波長変換材
料を混入した樹脂を被着するとともに、ダイオードを逆
極性に並列接続し、さらに底部を透明樹脂で充填したの
で、少ない数の半導体発光素子でフルカラや白色光を得
られるとともに、出射光を集光して輝度を上げ、さらに
発光表示装置の表面での輝度を均一にでき、またダイオ
ード等をリードフレームの凹状底部へより強く固定する
とともに、素子等を保護でき、消費電力の低減など経済
性や半導体発光素子の絶縁破壊の回避による取扱が容易
にできる。According to a fourth aspect of the present invention, in the light emitting display device, at least one of the plurality of semiconductor light emitting elements is coated with a resin mixed with a wavelength conversion material, and diodes are connected in parallel with opposite polarities. Filled with transparent resin, it is possible to obtain full color or white light with a small number of semiconductor light-emitting elements, to converge the emitted light to increase the luminance, and to further uniform the luminance on the surface of the light-emitting display device, and The diode and the like can be more firmly fixed to the concave bottom portion of the lead frame, and the element and the like can be protected. Therefore, economy such as reduction of power consumption and easy handling by avoiding dielectric breakdown of the semiconductor light emitting element can be facilitated.
【００５２】よって、フルカラ表示ができ白色表示時に
ＲＧＢの各色の半導体発光素子を用いずに表現出来ると
ともに、静電気による絶縁破壊を回避し、取扱を容易に
し静電気対策を必要とせず、さらに消費電力の低減など
経済性、作業性に優れ、各種用途に適した分野への利用
が可能な発光表示装置である。Therefore, full color display can be performed, and white color can be displayed without using semiconductor light emitting elements of each color of RGB. In addition, dielectric breakdown due to static electricity can be avoided, handling can be facilitated, no countermeasure against static electricity is required, and power consumption is further reduced. This light emitting display device is excellent in economy and workability, such as reduction, and can be used in fields suitable for various uses.
【図１】本発明に係る発光表示装置の実施の形態を示す
全体斜視図FIG. 1 is an overall perspective view showing an embodiment of a light emitting display device according to the present invention.
【図２】図１の発光表示装置の断面図FIG. 2 is a cross-sectional view of the light-emitting display device of FIG.
１…発光表示装置、２…リードフレーム、２ａ，２ｂ…
載置パターン、配線パターン、３…モールドケース、
４，４ｂ…半導体発光素子、５…波長変換材料混入樹
脂、６…レンズ状透明樹脂、７…ダイオード、８…ワイ
ヤ、９…リード端子、１０…出光窓。DESCRIPTION OF SYMBOLS 1 ... Light-emitting display device, 2 ... Lead frame, 2a, 2b ...
Mounting pattern, wiring pattern, 3 ... mold case,
4, 4b: semiconductor light emitting element, 5: resin mixed with wavelength conversion material, 6: lens-shaped transparent resin, 7: diode, 8: wire, 9: lead terminal, 10: light emitting window.
─────────────────────────────────────────────────────
────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成１２年１月７日（２０００．１．７）[Submission date] January 7, 2000 (2000.1.7)
【手続補正１】[Procedure amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】全文[Correction target item name] Full text
【補正方法】変更[Correction method] Change
【補正内容】[Correction contents]
【書類名】 明細書[Document Name] Statement
【発明の名称】 発光表示装置[Title of the Invention] Light-emitting display device
【特許請求の範囲】[Claims]
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】この発明は、半導体発光素子
や波長変換材料混入樹脂で被着した半導体発光素子等を
リードフレーム上に複数設け、特に静電気等に弱い青色
系発光の半導体発光素子に対してダイオードを逆極性に
並列接続し、フルカラで電気的ショックに強い半導体発
光素子の実現を可能にする発光表示装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a plurality of semiconductor light emitting devices and a semiconductor light emitting device coated with a resin mixed with a wavelength conversion material provided on a lead frame. The present invention relates to a light-emitting display device in which diodes are connected in parallel with opposite polarities to realize a semiconductor light-emitting device that is full-color and resistant to electric shock.
【０００２】[0002]
【従来の技術】従来のフルカラ表示させる発光表示装置
は、発光色が赤色（Ｒｅｄ）、青色（Ｂｌｕｅ）および
緑色（Ｇｒｅｅｎ）の半導体発光素子、いわゆるＲＢＧ
の三つの半導体発光素子を用いたランプを１ユニットと
するＬＥＤランプを用いたものが知られている。2. Description of the Related Art A conventional light-emitting display device for full-color display is a semiconductor light-emitting device of red (Red), blue (Blue) and green (Green), so-called RBG.
There is known an LED lamp using one of the above three semiconductor light emitting elements as a unit.
【０００３】また、発光色が赤色（Ｒｅｄ）、青色（Ｂ
ｌｕｅ）および緑色（Ｇｒｅｅｎ）の半導体発光素子の
三つの半導体発光素子を一つのリードフレーム等に設け
たフルカラの発光表示装置も知られている。[0003] The emission color is red (Red), blue (B
A full-color light-emitting display device in which three semiconductor light-emitting elements, ie, a blue light-emitting element and a green light-emitting element, are provided on a single lead frame or the like is also known.
【０００４】さらに、半導体発光素子自身の発光色から
他の発光色を得るため、例えば特開平７−９９３４５号
公報に開示されているように、リードフレームのカップ
状に形成した底部上に半導体発光素子を載置し、カップ
内部に半導体発光素子の発光波長を他の波長に変換する
蛍光物質を含有した樹脂で包囲して異なる発光色を得る
発光ダイオードが知られている。Further, in order to obtain another emission color from the emission color of the semiconductor light emitting element itself, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-99345, a semiconductor light emitting device is provided on the bottom of a lead frame formed in a cup shape. 2. Description of the Related Art There is known a light emitting diode in which an element is placed and surrounded by a resin containing a fluorescent substance for converting the emission wavelength of a semiconductor light emitting element into another wavelength inside a cup, thereby obtaining different emission colors.
【０００５】また、同様に半導体発光素子の発光波長を
他の波長に変換してＬＥＤランプ単体で白色の発光色を
得るため、青色発光の半導体発光素子等を波長変換材料
が含有した樹脂全体でランプ形状に包囲したものも知ら
れている。Similarly, in order to convert the emission wavelength of the semiconductor light emitting element to another wavelength to obtain a white light emission color with the LED lamp alone, the blue light emitting semiconductor light emitting element and the like are made of the entire resin containing the wavelength conversion material. A lamp surrounded by a lamp is also known.
【０００６】[0006]
【発明が解決しようとする課題】従来のフルカラ表示さ
せる発光表示装置は、赤色、青色および緑色発光色の半
導体発光素子を３つ用いたランプを１ユニットとして使
用する場合には、発光表示装置が大型化なってしまうと
いう課題がある。しかも、互いの半導体発光素子間の距
離があるので、混合色が得にくく、混合色のばらつきや
画面色が粗くなってしまう課題もある。A conventional light-emitting display device for full-color display uses a lamp using three semiconductor light-emitting elements of red, blue and green colors as one unit. There is a problem that it becomes large. Moreover, since there is a distance between the semiconductor light emitting elements, it is difficult to obtain a mixed color, and there is also a problem that the mixed color varies and the screen color becomes coarse.
【０００７】また、従来の発光色が赤色（Ｒｅｄ）、青
色（Ｂｌｕｅ）および緑色（Ｇｒｅｅｎ）の半導体発光
素子の三つの半導体発光素子を一つのリードフレーム等
に設けたフルカラの発光表示装置では、白色の発光色を
得る場合に赤色、青色および緑色等全ての半導体発光素
子に電荷を供給しなければ成らないので、電力消費が大
きく、省エネルギに対する課題や携帯機器等のバッテリ
必要スペースに対する課題がある。Further, in a conventional full color light emitting display device in which three semiconductor light emitting elements of red (Red), blue (Blue) and green (Green) are provided on one lead frame or the like, In order to obtain a white light emission color, electric charges must be supplied to all the semiconductor light emitting elements such as red, blue and green, so that the power consumption is large, and there is a problem of energy saving and a problem of a space required for a battery such as a portable device. is there.
【０００８】さらに、特開平７−９９３４５号公報に開
示されているように、リードフレームのカップ状に形成
した底部上に載置した半導体発光素子に波長変換する蛍
光物質を含有した樹脂で包囲して異なる発光色を得る発
光ダイオードは、リードフレーム材料自身でカップを形
成するため、複数の電気的パターンが作成できず、単一
の電極となってしまう。その結果、複数の半導体発光素
子の載置ができず、さらに単色の半導体発光素子のみの
ために混合色が得にくい課題がある。Further, as disclosed in Japanese Patent Application Laid-Open No. 7-99345, a semiconductor light emitting device mounted on a cup-shaped bottom of a lead frame is surrounded by a resin containing a fluorescent substance for wavelength conversion. A light emitting diode that obtains a different emission color by forming a cup with the lead frame material itself cannot form a plurality of electrical patterns and becomes a single electrode. As a result, there is a problem that a plurality of semiconductor light emitting elements cannot be mounted, and it is difficult to obtain a mixed color because only a single color semiconductor light emitting element is used.
【０００９】また、同様に半導体発光素子の発光波長を
他の波長に変換してＬＥＤランプ単体で白色の発光色を
得るために青色発光の半導体発光素子等を波長変換材料
が含有した樹脂全体でランプ形状に包囲した構成では、
波長変換材料の使用量が多くなってしまうとともに波長
変換材料の分散分布の安定性に課題がある。Similarly, in order to convert the emission wavelength of the semiconductor light emitting element to another wavelength and obtain a white light emission color by the LED lamp alone, the entire resin containing the blue light emitting semiconductor light emitting element or the like containing the wavelength conversion material. In the configuration surrounded by the lamp shape,
As the amount of the wavelength conversion material used increases, there is a problem in the stability of the dispersion distribution of the wavelength conversion material.
【００１０】さらに、ＩｎＧａＡｌＰ系、ＩｎＧａＡｌ
Ｎ系、ＩｎＧａＮ系等からなる青色発光色の半導体発光
素子は、発光する活性層が静電気等の電気的ショックに
より破壊する課題がある。Further, InGaAlP, InGaAl
A semiconductor light-emitting device of a blue emission color such as an N-based or InGaN-based semiconductor has a problem that a light-emitting active layer is broken by an electric shock such as static electricity.
【００１１】本発明はこのような課題を解決するためな
されたもので、複数の半導体発光素子をリードフレーム
上に載置し、さらに白色光を得るために３つのＲＧＢ半
導体発光素子を用いずに青色発光の半導体発光素子に波
長変換材料を混入した樹脂で被着して白色光を得るとと
もにダイオードを逆極性に並列接続して静電気等に対し
回避した取扱が容易で省エネに優れたフルカラの表示が
行える発光表示装置を提供することにある。The present invention has been made to solve such a problem, and a plurality of semiconductor light emitting devices are mounted on a lead frame, and three RGB light emitting devices are not used to obtain white light. Full-color display that is easy to handle, avoids static electricity, etc. by connecting a diode in parallel with a reverse polarity to obtain white light by attaching a blue light emitting semiconductor light emitting element to a resin mixed with a wavelength conversion material, and saving energy. It is an object of the present invention to provide a light emitting display device capable of performing the above.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するため
請求項１に係る発光表示装置は、青色に発光する半導体
発光素子が、橙色蛍光顔料や橙色蛍光染料を混入した波
長変換材料混入樹脂で被着されるとともに、波長変換材
料混入樹脂の上から透明樹脂でレンズ状に被包形成さ
れ、さらにダイオードが逆極性に並列接続され、底部に
透明樹脂が充填されることを特徴とする。According to a first aspect of the present invention, there is provided a light emitting display device, wherein a semiconductor light emitting element which emits blue light is made of a resin having a wavelength conversion material mixed with an orange fluorescent pigment or an orange fluorescent dye. In addition to being attached, the lens is encapsulated in a lens shape with a transparent resin from above the resin mixed with the wavelength conversion material, and diodes are connected in parallel with opposite polarities, and the bottom is filled with the transparent resin.
【００１３】請求項１に係る発光表示装置は、青色に発
光する半導体発光素子が、橙色蛍光顔料や橙色蛍光染料
を混入した波長変換材料混入樹脂で被着されるととも
に、波長変換材料混入樹脂の上から透明樹脂でレンズ状
に被包形成され、さらにダイオードが逆極性に並列接続
され、底部に透明樹脂が充填されるので、ｎ層からなる
カソード側に静電気等の高電荷が加わっても逆極性に並
列接続した整流素子に流れることによって半導体発光素
子に電流が流れない。また、少ない数の半導体発光素子
でフルカラや白色光を得られるとともに、出射光を集光
して輝度を上げ、さらに発光表示装置の表面での輝度を
均一にできる。さらに、ダイオード等をリードフレーム
の凹状底部へより強く固定するとともに、素子等を保護
する。According to a first aspect of the present invention, in the light emitting display device, the semiconductor light emitting element that emits blue light is covered with a wavelength conversion material-mixed resin mixed with an orange fluorescent pigment or an orange fluorescent dye. A lens is formed in a lens shape from above with a transparent resin, and a diode is connected in parallel with the opposite polarity.The bottom is filled with the transparent resin. The current does not flow through the semiconductor light emitting element due to the flow through the rectifiers connected in parallel in the polarity. In addition, full color or white light can be obtained with a small number of semiconductor light emitting elements, the emitted light can be condensed to increase the luminance, and the luminance on the surface of the light emitting display device can be made uniform. Further, the diode and the like are more strongly fixed to the concave bottom portion of the lead frame, and the elements and the like are protected.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づき説明する。なお、本発明は、半導体発光素
子や波長変換材料を混入した樹脂で被着した半導体発光
素子等をリードフレーム上に複数載置し、各種の発光色
を得るとともにダイオードを逆極性に並列接続して静電
気等に対し回避し、取扱が容易で省エネに優れたフルカ
ラ表示が可能な発光表示装置を提供するものである。Embodiments of the present invention will be described below with reference to the accompanying drawings. In the present invention, a plurality of semiconductor light emitting elements, semiconductor light emitting elements and the like, which are coated with a resin mixed with a wavelength conversion material, are mounted on a lead frame to obtain various emission colors and connect diodes in parallel with opposite polarities. The present invention provides a light-emitting display device capable of performing a full-color display which is easy to handle and saves energy by avoiding static electricity and the like.
【００１５】図１は本発明に係る発光表示装置の実施の
形態を示す全体斜視図、図２は図１の発光表示装置の断
面図である。図１及び図２に示すように、本実施の形態
の発光表示装置１は、インジェクションモールド成型さ
れたもので、リードフレーム２、モールドケース３、半
導体発光素子４、波長変換材料混入樹脂５、レンズ状透
明樹脂６、ダイオード７、ワイヤ８、リード端子９およ
び出光窓１０から構成されている。FIG. 1 is an overall perspective view showing an embodiment of a light emitting display device according to the present invention, and FIG. 2 is a sectional view of the light emitting display device shown in FIG. As shown in FIGS. 1 and 2, the light emitting display device 1 of the present embodiment is formed by injection molding, and includes a lead frame 2, a mold case 3, a semiconductor light emitting element 4, a resin 5 mixed with a wavelength conversion material, a lens. It comprises a transparent resin 6, a diode 7, a wire 8, a lead terminal 9, and a light exit window 10.
【００１６】リードフレーム２は、導電性および弾性力
のある燐青銅やアルミニウム等の金属薄板からなり、半
導体発光素子４やダイオード７を載置する複数の載置パ
ターンや電気的接続する配線パターン２ａ，２ｂ等と複
数のリード端子９および図示しない支持枠部等を１ユニ
ットとして、多数ユニットを並設されるようにパンチプ
レス等により形成される。The lead frame 2 is made of a conductive and elastic thin metal plate such as phosphor bronze or aluminum, and has a plurality of mounting patterns on which the semiconductor light emitting elements 4 and the diodes 7 are mounted and a wiring pattern 2a for electrical connection. , 2b, etc., a plurality of lead terminals 9, and a support frame (not shown) are formed as one unit by a punch press or the like so that many units are arranged in parallel.
【００１７】リードフレーム２は図示しない金型によっ
て面対称に挟み込まれ、載置パターンや配線パターン２
ａ，２ｂが表出して凹なる底部を形成するようにリード
フレーム２にモールドケース３がインサートモールド成
形される。The lead frame 2 is sandwiched by a mold (not shown) in plane symmetry, and the mounting pattern and the wiring pattern 2
A mold case 3 is insert-molded on the lead frame 2 so that a and 2b are exposed to form a concave bottom.
【００１８】なお、リードフレーム２は、モールドケー
ス３のインサートモールド成形、半導体発光素子４やダ
イオード７等のチップのマウント、ボンディング、ワイ
ヤ８のボンディング、波長変換材料混入樹脂５の被着、
レンズ状透明樹脂６の被包形成、レンズ状透明樹脂６お
よび凹状底部への透明樹脂の充填等の工程まで全体のフ
レームを保持し、最終的にはリード端子９のみを残して
切断除去される。The lead frame 2 is formed by insert molding of a mold case 3, mounting chips such as a semiconductor light emitting element 4 and a diode 7, bonding, bonding of wires 8, adhesion of a resin 5 mixed with a wavelength conversion material, and the like.
The entire frame is held until processes such as encapsulation of the lens-shaped transparent resin 6 and filling of the lens-shaped transparent resin 6 and the concave bottom with the transparent resin, and are finally cut and removed leaving only the lead terminals 9. .
【００１９】モールドケース３は、変成ポリアミド、ポ
リブチレンテレフタレート、ナイロン４６や芳香族系ポ
リエステル等からなる液晶ポリマなどの絶縁性の有る材
料に、光の反射性を良くするためにチタン酸バリウム等
の白色粉体を混入させたものを加熱して圧力を加え、射
出成型により形成される。The mold case 3 is made of an insulating material such as a liquid crystal polymer made of modified polyamide, polybutylene terephthalate, nylon 46, aromatic polyester, or the like, and is made of barium titanate or the like to improve light reflectivity. It is formed by injection molding by heating and applying pressure by mixing white powder.
【００２０】半導体発光素子４，４ｂは、ＧａＰ、Ｇａ
Ａｓ、ＧａＮ、ＳｉＣ、ＧａＡｓＰ、ＧａＡｌＡｓ、Ｉ
ｎＧａＮ、ＩｎＧａＡｌＰ、ＩｎＧａＡｌＮ等の化合物
半導体などからなり、各色を発光する。The semiconductor light emitting devices 4 and 4b are GaP, Ga
As, GaN, SiC, GaAsP, GaAlAs, I
It is made of a compound semiconductor such as nGaN, InGaAlP, and InGaAlN, and emits each color.
【００２１】特に青色発光にはＩｎＧａＡｌＰ系、Ｉｎ
ＧａＡｌＮ系、ＩｎＧａＮ系などの半導体発光素子が用
いられ、Ｇａの添加量によって黄緑色から赤色や青色か
ら黄緑色のように、ある範囲において各種の発光色が得
られる。In particular, for blue light emission, InGaAlP-based, In
A semiconductor light-emitting element such as a GaAlN-based or InGaN-based semiconductor is used, and various emission colors can be obtained in a certain range such as yellow-green to red or blue to yellow-green depending on the amount of Ga added.
【００２２】なお、図１の例では、波長変換材料混入樹
脂５で被着した素子を半導体発光素子４とし、波長変換
材料混入樹脂５を被着せずに発光色が発光素子のままの
素子を半導体発光素子４ｂとして区別している。In the example of FIG. 1, the element covered with the wavelength conversion material-mixed resin 5 is referred to as a semiconductor light-emitting element 4, and the element whose luminescent color is a light-emitting element without the wavelength-converted material-mixed resin 5 is used. It is distinguished as the semiconductor light emitting element 4b.
【００２３】半導体発光素子４，４ｂは、これら素子の
チップをパターン２ａ，２ｂ等にダイボンダで載置し、
フィラを樹脂に分散させた銀ペースト等により電気的接
続および機械的接続が行われ、対電極側にワイヤーボン
ディングして電気的接続が行われる。The semiconductor light emitting elements 4 and 4b are mounted on a pattern 2a, 2b or the like by a die bonder with chips of these elements.
Electrical connection and mechanical connection are performed by a silver paste or the like in which a filler is dispersed in resin, and electrical connection is performed by wire bonding to the counter electrode side.
【００２４】波長変換材料混入樹脂５は、無機系の蛍光
顔料や有機系の蛍光染料等からなり、無色透明なエポキ
シ樹脂やシリコーン樹脂等に混合分散させたものであ
り、半導体発光素子４を覆うように被着される。これに
より、半導体発光素子４の発光色を他の異なる色に変換
している。波長変換材料混入樹脂５は、例えば緑色発光
の半導体発光素子４からの光を赤色蛍光顔料や赤色蛍光
染料を混入した樹脂に投射すると黄色系の光が得られ、
青色発光の半導体発光素子４からの光を緑色蛍光顔料や
緑色蛍光染料を混入した樹脂に投射すると青緑色系の光
が得られる。The wavelength conversion material mixed resin 5 is made of an inorganic fluorescent pigment, an organic fluorescent dye, or the like, and is mixed and dispersed in a colorless and transparent epoxy resin, a silicone resin, or the like, and covers the semiconductor light emitting element 4. So that it is adhered. Thereby, the emission color of the semiconductor light emitting element 4 is converted into another different color. For example, when the wavelength conversion material-mixed resin 5 projects light from the green light emitting semiconductor light emitting element 4 onto a resin mixed with a red fluorescent pigment or a red fluorescent dye, yellow light is obtained,
When light from the blue light emitting semiconductor light emitting element 4 is projected onto a resin mixed with a green fluorescent pigment or a green fluorescent dye, blue-green light is obtained.
【００２５】なお、赤色蛍光顔料としては、例えばＹ2
Ｏ3 ：ＥｕやＹ（Ｐ，Ｖ）Ｏ4 ：Ｅｕ等がある。また、
緑色蛍光顔料としては、例えばＺｎ2 ＳｉＯ4 ：Ｍｎ等
がある。さらに、橙色蛍光顔料としては、ＣａＳｉ
Ｏ3 ：Ｐｂ，ＭｎやＹ3 Ａｌ5 Ｏ 12系等がある。As the red fluorescent pigment, for example, YTwo
OThree: Eu or Y (P, V) OFour: Eu and the like. Also,
As the green fluorescent pigment, for example, ZnTwoSiOFour: Mn, etc.
There is. Further, as the orange fluorescent pigment, CaSi
OThree: Pb, Mn or YThreeAlFiveO 12System.
【００２６】また、波長変換材料混入樹脂５は、半導体
発光素子４等の発光した光の吸収により励起されエネル
ギ準位の低い基底状態からエネルギ準位の高い励起状態
に遷移し、基底状態に戻る時に電子エネルギを振動や回
転等の熱エネルギに変化することなく光として放出する
物である。すなわち、波長変換材料混入樹脂５は、一般
にストークスの法則の様に、半導体発光素子４の発光波
長よりも波長変換材料からの発光波長のほうが長い発光
や２段階的な電子励起が励起過程に含まれ、反ストーク
スな半導体発光素子４の発光波長よりも波長変換材料か
らの発光波長のほうが短い発光をも含まれる。The resin 5 mixed with the wavelength conversion material is excited by absorption of light emitted from the semiconductor light emitting element 4 or the like, and transitions from a ground state having a low energy level to an excited state having a high energy level, and returns to the ground state. It is a substance that emits electron energy as light without changing it into heat energy such as vibration or rotation. That is, the resin 5 mixed with the wavelength conversion material generally includes, as in Stokes' law, emission in which the emission wavelength from the wavelength conversion material is longer than the emission wavelength of the semiconductor light emitting element 4 and two-step electronic excitation in the excitation process. This also includes light emission whose emission wavelength from the wavelength conversion material is shorter than the emission wavelength of the anti-Stokes semiconductor light emitting element 4.
【００２７】さらに、波長変換材料混入樹脂５は、無色
透明なエポキシ樹脂やシリコーン樹脂等に混合分散する
比率によって、エポキシ樹脂部分を透過した半導体発光
素子４本来の色調と波長変換材料で波長変換された色調
との混合によって色度図等に示される色調が得られる。Further, the wavelength conversion material-mixed resin 5 is wavelength-converted by the original color tone and wavelength conversion material of the semiconductor light emitting element 4 which has passed through the epoxy resin portion, according to the ratio of being mixed and dispersed in a colorless and transparent epoxy resin or silicone resin. The color tone shown in the chromaticity diagram and the like is obtained by mixing with the color tone.
【００２８】例えば、青色発光の半導体発光素子４から
の光を橙色蛍光顔料や橙色蛍光染料を混入した波長変換
材料混入樹脂５に投射すると、青色光と橙色光との混合
によって白色光が得られ、波長変換材料が多い場合には
橙色の色調が濃い光が得られ、波長変換材料が少ない場
合には青色の色調が濃い光が得られる。For example, when light from a blue light emitting semiconductor light emitting element 4 is projected onto a resin 5 mixed with a wavelength conversion material mixed with an orange fluorescent pigment or an orange fluorescent dye, white light is obtained by mixing the blue light and the orange light. When the amount of the wavelength converting material is large, light with a deep orange color tone is obtained, and when the amount of the wavelength converting material is small, light with a deep blue color tone is obtained.
【００２９】レンズ状透明樹脂６は、透明なエポキシ樹
脂等からなり、半導体発光素子４に被着した波長変換材
料混入樹脂５の表面にレンズ状に被包形成される。この
レンズ状透明樹脂６は、半導体発光素子４自身の発光色
と波長変換された発光色とを集光して白色光として光束
を出射する。The lens-shaped transparent resin 6 is made of a transparent epoxy resin or the like, and is formed in a lens shape on the surface of the wavelength conversion material-mixed resin 5 attached to the semiconductor light emitting element 4. The lens-shaped transparent resin 6 condenses the emission color of the semiconductor light-emitting element 4 itself and the emission color whose wavelength has been converted, and emits a light beam as white light.
【００３０】ダイオード７は、半導体発光素子４に対し
て逆極性に並列接続するために、カソード電極側がパタ
ーン２ｂ上に載置されダイボンドされており、アノード
電極側からボンディングワイヤ８でパターン２ａにワイ
ヤーボンディングされている。これにより、静電気等の
電気的ショックによって半導体発光素子４の絶縁層や発
光を行う活性層を中心とした部分の絶縁破壊を回避して
いる。In order to connect the diode 7 in parallel with the semiconductor light emitting element 4 in the opposite polarity, the cathode electrode side is mounted on the pattern 2b and die-bonded, and the bonding wire 8 is used to wire the pattern 2a from the anode electrode side. Bonded. This avoids dielectric breakdown of the insulating layer of the semiconductor light emitting element 4 and the portion around the active layer for emitting light due to electric shock such as static electricity.
【００３１】また、特にＩｎＧａＡｌＰ系、ＩｎＧａＡ
ｌＮ系、ＩｎＧａＮ系の化合物の半導体発光素子等は静
電気等に弱いが、これら対象半導体発光素子以外でも近
年半導体発光素子の微少化が進むにつれ、これらダイオ
ード（整流素子）７の逆極性に並列接続することにより
静電気による絶縁破壊を回避する事が可能である。In particular, InGaAlP-based, InGaAs
1N-based and InGaN-based compound semiconductor light-emitting devices are susceptible to static electricity and the like. By doing so, it is possible to avoid dielectric breakdown due to static electricity.
【００３２】ワイヤ８は金線等からなり、半導体発光素
子４等のアノード電極とパターン２ｂ等とをボンダによ
って電気的に接続している。同様にダイオード７のアノ
ード電極とパターン２ａとをボンダによって電気的に接
続している。The wire 8 is made of a gold wire or the like, and electrically connects an anode electrode of the semiconductor light emitting element 4 or the like to the pattern 2b or the like by a bonder. Similarly, the anode electrode of the diode 7 and the pattern 2a are electrically connected by a bonder.
【００３３】リード端子９は、導電性および弾性力のあ
る燐青銅等の銅合金材またはアルミニウム等からなるリ
ードフレームをモールドケース３から直接取り出して形
成される。リード端子９は、例えばパターン２ｂと電気
的に接続されて半導体発光素子４のアノード電極側と等
しく、本発明の発光表示装置としての陽極（＋）として
使用されるように構成される。同様に、パターン２ａと
電気的に接続されたリード端子は半導体発光素子４のカ
ソード電極側と等しく、陰極（−）として使用されるよ
うに構成される。The lead terminal 9 is formed by directly taking out a lead frame made of a copper alloy material such as phosphor bronze or aluminum having conductivity and elasticity or aluminum from the mold case 3. The lead terminal 9 is electrically connected to the pattern 2b, for example, and is equal to the anode electrode side of the semiconductor light emitting element 4, and is configured to be used as an anode (+) in the light emitting display of the present invention. Similarly, the lead terminal electrically connected to the pattern 2a is equal to the cathode electrode side of the semiconductor light emitting element 4, and is configured to be used as a cathode (-).
【００３４】出光窓１０は、モールドケース３の開口部
であり、キャスティングタイプの場合には、無色透明な
エポキシ樹脂等を充填したフラットな面やレンズ状の凸
面からなり、目的に応じてエポキシ樹脂に光散乱剤を混
入させ、モールドケース３の開口部表面での輝度を均一
にするとともに、半導体発光素子４，４ｂ、ダイオード
７、ワイヤ８および波長変換材料混入樹脂５やレンズ状
透明樹脂６等全体も固定させている。The light exit window 10 is an opening of the mold case 3. In the case of the casting type, the light exit window 10 has a flat surface or a lens-like convex surface filled with a colorless and transparent epoxy resin or the like. A light scattering agent is mixed into the mold case 3 to make the brightness on the surface of the opening of the mold case 3 uniform, and the semiconductor light emitting elements 4, 4b, the diode 7, the wire 8, the wavelength conversion material-mixed resin 5, the lens-shaped transparent resin 6, and the like. The whole is also fixed.
【００３５】また、レンズ状透明樹脂６によって集光作
用を高める場合には、レンズ状透明樹脂６の屈折率より
も低屈折率のエポキシ樹脂等の異屈折率材を用いてより
効率を上げることが可能である。When the light-collecting action is enhanced by the lens-shaped transparent resin 6, the efficiency is further increased by using a different refractive index material such as an epoxy resin having a refractive index lower than that of the lens-shaped transparent resin 6. Is possible.
【００３６】さらに、本発明の発光表示装置の使用目的
による機械的、化学的特性仕様によって、シリコーン樹
脂をモールドケース３の開口部に充填しても良い。Further, the opening of the mold case 3 may be filled with a silicone resin according to the mechanical and chemical characteristics specifications according to the intended use of the light emitting display device of the present invention.
【００３７】また、モールドケース３内部に樹脂等を充
填しないエアギャップタイプの場合には、モールドケー
ス３内部側面を傾斜させ、反射効率が最大になる様に傾
斜角度を設計する。In the case of an air gap type in which the inside of the mold case 3 is not filled with resin or the like, the inside side surface of the mold case 3 is inclined to design the inclination angle so that the reflection efficiency is maximized.
【００３８】さらに、モールドケース３の開口部表面で
の輝度を均一にするために散乱フィルムやコントラスト
を向上するために光学フィルタを用いる場合もある。Further, in some cases, a scattering film is used to make the luminance on the surface of the opening of the mold case 3 uniform, and an optical filter is used to improve the contrast.
【００３９】[0039]
【実施例】次に、本発明に係る発光表示装置の実施例に
ついて説明する。 （実施例１）青色発光の半導体発光素子に対して逆電圧
を印加した場合、半導体発光素子単体の構成では、５回
の試験に於いて印加電圧３００Ｖ以上で全て不良となっ
た。また、半導体発光素子に逆接続にダイオードを挿入
した場合には、５回の試験に於いて印加電圧５０００Ｖ
でも絶縁破壊を示さなかった。Next, an embodiment of the light emitting display device according to the present invention will be described. (Example 1) When a reverse voltage was applied to a blue light emitting semiconductor light emitting device, all of the semiconductor light emitting devices failed when the applied voltage was 300 V or more in five tests. When a diode is inserted in the semiconductor light emitting device in reverse connection, the applied voltage is 5000 V in five tests.
However, it did not show dielectric breakdown.
【００４０】（実施例２）ＹＡＧ（イットリウム・アル
ミニウム・ガーネット）系の蛍光顔料である（Ｙ，Ｇ
ｄ）3 （Ａｌ，Ｇａ）5 Ｏ12：Ｃｅの（Ｙ，Ｇｄ）
3 （Ａｌ，Ｇａ）5 Ｏ12とＣｅとの原子量比を各種変
え、この比率が１：４の時に、さらに蛍光顔料の平均粒
径を８μｍ程度にした物を無色透明なエポキシ樹脂と重
量比１：１に調整した波長変換材料混入樹脂による橙色
の発光色と青色発光の半導体発光素子の発光色とにより
白色の光を得ることができた。Example 2 A YAG (yttrium aluminum garnet) fluorescent pigment (Y, G
d) 3 (Al, Ga) 5 O 12: the Ce (Y, Gd)
3 (Al, Ga) changed 5 O 12 with various atomic weight ratio of Ce, the ratio is 1: when the 4, further colorless transparent epoxy resin in a weight ratio of the ones you order of 8μm average particle diameter of the fluorescent pigment White light could be obtained from the orange light emission color of the resin mixed with the wavelength conversion material adjusted to 1: 1 and the light emission color of the blue light emitting semiconductor light emitting element.
【００４１】なお、上記実施例に青色発光の半導体発光
素子としては、豊田合成（株）のＥ１Ｃ００−１ＢＡ０
１を用いた。In the above embodiment, the semiconductor light emitting device for emitting blue light includes E1C00-1BA0 manufactured by Toyoda Gosei Co., Ltd.
1 was used.
【００４２】[0042]
【発明の効果】以上のように、請求項１に係る発光表示
装置は、青色に発光する半導体発光素子が、橙色蛍光顔
料や橙色蛍光染料を混入した波長変換材料混入樹脂で被
着されるとともに、波長変換材料混入樹脂の上から透明
樹脂でレンズ状に被包形成され、さらにダイオードが逆
極性に並列接続され、底部に透明樹脂が充填されるの
で、ｎ層からなるカソード側に静電気等の高電荷が加わ
っても逆極性に並列接続した整流素子に流れることによ
って半導体発光素子に電流が流れない。これにより、半
導体発光素子の絶縁破壊を回避し発光表示装置としての
歩留りの向上が図れる。As described above, in the light-emitting display device according to the first aspect, the semiconductor light-emitting element that emits blue light is covered with the wavelength conversion material mixed resin mixed with the orange fluorescent pigment or the orange fluorescent dye. The lens is encapsulated in the form of a lens with a transparent resin from above the resin mixed with the wavelength conversion material, and the diode is connected in parallel with the opposite polarity, and the bottom is filled with the transparent resin. Even if a high charge is applied, no current flows to the semiconductor light emitting device by flowing to the rectifying device connected in parallel with the opposite polarity. Thereby, the dielectric breakdown of the semiconductor light emitting element can be avoided and the yield as the light emitting display device can be improved.
【００４３】また、少ない数の半導体発光素子でフルカ
ラや白色光を得られるとともに、出射光を集光して輝度
を上げ、さらに発光表示装置の表面での輝度を均一にで
きる。しかも、消費電力の低減等コストパフォーマンス
に優れた発光表示装置を提供できる。In addition, full color or white light can be obtained with a small number of semiconductor light emitting elements, the emitted light can be condensed to increase the luminance, and the luminance on the surface of the light emitting display can be made uniform. In addition, a light-emitting display device with excellent cost performance such as reduction in power consumption can be provided.
【００４４】さらに、ダイオード等をリードフレームの
凹状底部へより強く固定するとともに、素子等を保護で
き、消費電力の低減など経済性や半導体発光素子の絶縁
破壊の回避による取扱が容易にできる。Further, the diode and the like can be more firmly fixed to the concave bottom portion of the lead frame, and the element and the like can be protected. Thus, the economy can be reduced by reducing the power consumption, and the handling can be facilitated by avoiding the dielectric breakdown of the semiconductor light emitting element.
【００４５】よって、フルカラ表示ができ白色表示時に
ＲＧＢの各色の半導体発光素子を用いずに表現出来ると
ともに、静電気による絶縁破壊を回避し、取扱を容易に
し静電気対策を必要とせず、さらに消費電力の低減など
経済性、作業性に優れ、各種用途に適した分野への利用
が可能な発光表示装置である。Therefore, full color display can be performed, and white color can be displayed without using semiconductor light emitting elements of each color of RGB. In addition, dielectric breakdown due to static electricity can be avoided, handling can be facilitated, static electricity countermeasures are not required, and power consumption is further reduced. This light emitting display device is excellent in economy and workability, such as reduction, and can be used in fields suitable for various uses.
【図面の簡単な説明】[Brief description of the drawings]
【図１】本発明に係る発光表示装置の実施の形態を示す
全体斜視図FIG. 1 is an overall perspective view showing an embodiment of a light emitting display device according to the present invention.
【図２】図１の発光表示装置の断面図FIG. 2 is a cross-sectional view of the light-emitting display device of FIG.
【符号の説明】 １…発光表示装置、２…リードフレーム、２ａ，２ｂ…
載置パターン、配線パターン、３…モールドケース、
４，４ｂ…半導体発光素子、５…波長変換材料混入樹
脂、６…レンズ状透明樹脂、７…ダイオード、８…ワイ
ヤ、９…リード端子、１０…出光窓。[Description of Signs] 1. Light-emitting display device, 2. Lead frame, 2a, 2b ...
Mounting pattern, wiring pattern, 3 ... mold case,
4, 4b: semiconductor light emitting element, 5: resin mixed with wavelength conversion material, 6: lens-shaped transparent resin, 7: diode, 8: wire, 9: lead terminal, 10: light emitting window.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 遠藤 司 東京都多摩市永山６−22−６ 日本デンヨ ー株式会社内 Ｆターム(参考） 4M109 AA02 BA01 CA02 CA05 CA21 DA07 EA02 EA10 EB08 EB12 EC11 ED04 EE12 EE13 EE15 FA04 GA01 5F041 AA12 AA24 AA44 CA40 DA07 DA21 DA44 EE25 FF01 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Tsukasa Endo 6-22-6 Nagayama, Tama-shi, Tokyo F-term in Denyo Corporation (reference) 4M109 AA02 BA01 CA02 CA05 CA21 DA07 EA02 EA10 EB08 EB12 EC11 ED04 EE12 EE13 EE15 FA04 GA01 5F041 AA12 AA24 AA44 CA40 DA07 DA21 DA44 EE25 FF01
Claims (4)
子が載置されるパターンと電気的接続する配線パターン
とを有し、前記複数の半導体発光素子、前記パターンお
よび前記配線パターンが表出して凹状の底部に位置する
ように前記リードフレームが光反射材を混入した樹脂か
らなるモールドケースで覆われた構造の発光表示装置に
おいて、 前記半導体発光素子は、少なくとも１つ以上が波長変換
材料を混入した樹脂で被着されるとともに、ダイオード
が逆極性に並列接続されることを特徴とする発光表示装
置。1. A semiconductor device comprising: a pattern on which a plurality of semiconductor light-emitting elements are mounted on a lead frame; and a wiring pattern for electrical connection, wherein the plurality of semiconductor light-emitting elements, the pattern, and the wiring pattern are exposed and concave. In a light emitting display device having a structure in which the lead frame is covered with a mold case made of a resin mixed with a light reflecting material so as to be located at the bottom of the semiconductor light emitting device, at least one of the semiconductor light emitting elements has a wavelength conversion material mixed therein. A light-emitting display device comprising a resin and a diode connected in parallel with a reverse polarity.
子が載置されるパターンと電気的接続する配線パターン
とを有し、前記複数の半導体発光素子、前記パターンお
よび前記配線パターンが表出して凹なる底部を形成する
ように前記リードフレームが光反射材を混入した樹脂か
らなるモールドケースで覆われた構造の発光表示装置に
おいて、 前記半導体発光素子は、少なくとも１つ以上が波長変換
材料を混入した樹脂で被着され、さらに透明樹脂でレン
ズ状に被包形成されることを特徴とする発光表示装置。2. A semiconductor device comprising: a pattern on which a plurality of semiconductor light emitting elements are mounted on a lead frame; and a wiring pattern for electrical connection, wherein the plurality of semiconductor light emitting elements, the pattern, and the wiring pattern are exposed and recessed. In a light emitting display device having a structure in which the lead frame is covered with a mold case made of a resin mixed with a light reflecting material so as to form a bottom portion, at least one of the semiconductor light emitting elements has a wavelength conversion material mixed therein. A light-emitting display device, wherein the light-emitting display device is covered with a resin and is further formed in a lens shape with a transparent resin.
子が載置されるパターンと電気的接続する配線パターン
とを有し、前記複数の半導体発光素子、前記パターンお
よび前記配線パターンが表出して凹なる底部を形成する
ように前記リードフレームが光反射材を混入した樹脂か
らなるモールドケースで覆われた構造の発光表示装置に
おいて、 前記半導体発光素子は、少なくとも１つ以上が波長変換
材料を混入した樹脂で被着され、さらに透明樹脂でレン
ズ状に被包形成されるとともに、前記底部に透明樹脂が
充填されることを特徴とする発光表示装置。3. A semiconductor device comprising a pattern on which a plurality of semiconductor light-emitting elements are mounted on a lead frame and a wiring pattern for electrical connection, wherein the plurality of semiconductor light-emitting elements, the pattern, and the wiring pattern are exposed and recessed. In a light emitting display device having a structure in which the lead frame is covered with a mold case made of a resin mixed with a light reflecting material so as to form a bottom portion, at least one of the semiconductor light emitting elements has a wavelength conversion material mixed therein. A light-emitting display device, wherein the light-emitting display device is covered with a resin, is further formed in a lens shape with a transparent resin, and is filled with a transparent resin at the bottom.
子が載置されるパターンと電気的接続する配線パターン
とを有し、前記複数の半導体発光素子、前記パターンお
よび前記配線パターンが表出して凹なる底部を形成する
ように前記リードフレームが光反射材を混入した樹脂か
らなるモールドケースで覆われた構造の発光表示装置に
おいて、 前記半導体発光素子は、少なくとも１つ以上が波長変換
材料を混入した樹脂で被着されるとともに、ダイオード
が逆極性に並列接続され、さらに前記底部に透明樹脂が
充填されることを特徴とする発光表示装置。4. A semiconductor device comprising: a pattern on which a plurality of semiconductor light emitting elements are mounted on a lead frame; and a wiring pattern for electrical connection, wherein the plurality of semiconductor light emitting elements, the pattern and the wiring pattern are exposed and recessed. In a light emitting display device having a structure in which the lead frame is covered with a mold case made of a resin mixed with a light reflecting material so as to form a bottom portion, at least one of the semiconductor light emitting elements has a wavelength conversion material mixed therein. A light-emitting display device, wherein the light-emitting display device is covered with a resin, the diodes are connected in parallel with opposite polarities, and the bottom is filled with a transparent resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33589698A JP2000164936A (en) | 1998-11-26 | 1998-11-26 | Light emitting display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33589698A JP2000164936A (en) | 1998-11-26 | 1998-11-26 | Light emitting display device |
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| Publication Number | Publication Date |
|---|---|
| JP2000164936A true JP2000164936A (en) | 2000-06-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33589698A Pending JP2000164936A (en) | 1998-11-26 | 1998-11-26 | Light emitting display device |
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| JP (1) | JP2000164936A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002299691A (en) * | 2001-04-04 | 2002-10-11 | Seiwa Electric Mfg Co Ltd | Light emitting diode lamp and filter used therefor |
| WO2004017789A1 (en) * | 2002-07-30 | 2004-03-04 | Yoshida Industry Co., Ltd. | Storage case |
| JP2007329068A (en) * | 2006-06-09 | 2007-12-20 | Stanley Electric Co Ltd | Vehicular lighting fixture |
| JP2008186886A (en) * | 2007-01-29 | 2008-08-14 | Kyocera Chemical Corp | Resin-sealed semiconductor device having anti-imitation function |
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| JPH04109556U (en) * | 1991-03-08 | 1992-09-22 | シヤープ株式会社 | Reflective case type LED lamp |
| JPH0799345A (en) * | 1993-09-28 | 1995-04-11 | Nichia Chem Ind Ltd | Light emitting diode |
| JPH1065215A (en) * | 1996-08-22 | 1998-03-06 | Toyoda Gosei Co Ltd | Iii nitride semiconductor light-emitting device |
| JPH10190066A (en) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | Light emitting diode and led display using the same |
| JPH10242513A (en) * | 1996-07-29 | 1998-09-11 | Nichia Chem Ind Ltd | Light emitting diode and display device using the same |
| JPH10256610A (en) * | 1997-01-10 | 1998-09-25 | Rohm Co Ltd | Semiconductor light emitting device |
| JPH10284759A (en) * | 1997-04-10 | 1998-10-23 | Nichia Chem Ind Ltd | Light-emitting device and display using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH04109556U (en) * | 1991-03-08 | 1992-09-22 | シヤープ株式会社 | Reflective case type LED lamp |
| JPH0799345A (en) * | 1993-09-28 | 1995-04-11 | Nichia Chem Ind Ltd | Light emitting diode |
| JPH10242513A (en) * | 1996-07-29 | 1998-09-11 | Nichia Chem Ind Ltd | Light emitting diode and display device using the same |
| JPH1065215A (en) * | 1996-08-22 | 1998-03-06 | Toyoda Gosei Co Ltd | Iii nitride semiconductor light-emitting device |
| JPH10190066A (en) * | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | Light emitting diode and led display using the same |
| JPH10256610A (en) * | 1997-01-10 | 1998-09-25 | Rohm Co Ltd | Semiconductor light emitting device |
| JPH10284759A (en) * | 1997-04-10 | 1998-10-23 | Nichia Chem Ind Ltd | Light-emitting device and display using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002299691A (en) * | 2001-04-04 | 2002-10-11 | Seiwa Electric Mfg Co Ltd | Light emitting diode lamp and filter used therefor |
| WO2004017789A1 (en) * | 2002-07-30 | 2004-03-04 | Yoshida Industry Co., Ltd. | Storage case |
| US7393115B2 (en) | 2002-07-30 | 2008-07-01 | Yoshida Industry Co., Ltd. | Storage case |
| JP2007329068A (en) * | 2006-06-09 | 2007-12-20 | Stanley Electric Co Ltd | Vehicular lighting fixture |
| JP4729441B2 (en) * | 2006-06-09 | 2011-07-20 | スタンレー電気株式会社 | Vehicle lighting |
| JP2008186886A (en) * | 2007-01-29 | 2008-08-14 | Kyocera Chemical Corp | Resin-sealed semiconductor device having anti-imitation function |
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