JP2001223388A - Light source device - Google Patents

Light source device

Info

Publication number
JP2001223388A
JP2001223388A JP2000032116A JP2000032116A JP2001223388A JP 2001223388 A JP2001223388 A JP 2001223388A JP 2000032116 A JP2000032116 A JP 2000032116A JP 2000032116 A JP2000032116 A JP 2000032116A JP 2001223388 A JP2001223388 A JP 2001223388A
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
emitting element
light
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000032116A
Other languages
Japanese (ja)
Inventor
Tasuku Fujiwara
翼 藤原
Keisei Nakano
景生 中野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Leiz Corp
Original Assignee
Nippon Leiz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Leiz Corp filed Critical Nippon Leiz Corp
Priority to JP2000032116A priority Critical patent/JP2001223388A/en
Priority to AU32261/01A priority patent/AU3226101A/en
Priority to US09/937,847 priority patent/US6680568B2/en
Priority to CNB018008577A priority patent/CN1225801C/en
Priority to KR1020017012899A priority patent/KR100748815B1/en
Priority to TW090102958A priority patent/TW530424B/en
Priority to PCT/JP2001/000930 priority patent/WO2001059851A1/en
Priority to EP01904371A priority patent/EP1187228A4/en
Publication of JP2001223388A publication Critical patent/JP2001223388A/en
Priority to HK02102855.8A priority patent/HK1041367A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide light emission higher in brightness compared to conventional one during use for extended period. SOLUTION: In a light source device 1A comprising a semiconductor light- emitting element 4 of InGaAl, InGaAlN, InGaN, and GaN, the semiconductor light-emitting element 4 is transparent which is bonded and fitted on a reflective pattern 2a (and/or an electric-wiring pattern) with a transparent resin 3 where a wavelength conversion material is mixed. A desired light emission is provided from the light emission of the semiconductor light-emitting element 4 itself as well as from the light returning after being wavelength-converted with the transparent resin 3.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、液晶表示装置等の
光源として用いられる光源装置に関し、特に、長期間に
わたって高輝度な発光が得られる光源装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light source device used as a light source of a liquid crystal display device or the like, and more particularly to a light source device capable of obtaining high-luminance light emission for a long period of time.

【０００２】[0002]

【従来の技術】半導体発光素子である発光ダイオード
は、小型に構成され、球切れなどの心配もなく、効率良
く鮮明な発光色を得ることができる。また、駆動特性に
も優れており、振動やオン・オフのスイッチングによる
繰り返し動作にも強いという特徴がある。このため、各
種インジケータや液晶表示装置などの光源として利用さ
れている。2. Description of the Related Art Light-emitting diodes, which are semiconductor light-emitting elements, are small in size and can efficiently obtain clear luminescent colors without fear of burnout. In addition, they have excellent driving characteristics and are resistant to repetitive operations due to vibration and on / off switching. Therefore, it is used as a light source for various indicators and liquid crystal display devices.

【０００３】ところで、この種の発光ダイオードは、優
れた単色性ピーク波長を有しているために、例えば赤色
系、緑色系および青色系の各色に発光する発光ダイオー
ドを利用して白色系の光源装置を構成する場合、各色に
発光する発光ダイオードを近接配置した状態で発光させ
て拡散混色させる必要があった。Since this type of light emitting diode has an excellent monochromatic peak wavelength, for example, a white light source is used by using light emitting diodes that emit light of red, green and blue colors, for example. In the case of configuring the device, it is necessary to emit light in a state where the light emitting diodes that emit light of each color are arranged close to each other to diffuse and mix colors.

【０００４】すなわち、白色系の光源装置を得るために
は、赤色系、緑色系および青色系の３種類の発光ダイオ
ード、または青緑色系および黄色系の２種類の発光ダイ
オードが必要であり、発光色の異なる複数種類の発光ダ
イオードを使用しなければならなかった。That is, in order to obtain a white light source device, three kinds of light emitting diodes of red, green and blue, or two kinds of light emitting diodes of blue green and yellow are necessary. Multiple types of light emitting diodes of different colors had to be used.

【０００５】しかも、半導体からなる発光ダイオードチ
ップは、物によって色調や輝度にバラツキがあり、複数
の発光ダイオードが各々異なる材料で構成される場合に
は各発光ダイオードチップの駆動電力などが異なり、個
々に電源を確保する必要があった。In addition, the light emitting diode chips made of semiconductors vary in color tone and luminance depending on the object. When a plurality of light emitting diodes are made of different materials, the driving power of each light emitting diode chip and the like are different. Needed to secure power.

【０００６】このため、出射光が白色光となるように、
各発光ダイオード毎に供給される電流などを調節しなけ
ればならなかった。また、使用される発光ダイオード
は、個々の温度特性の差や経時変化が異なり色調も変化
するという問題があった。さらには、各発光ダイオード
チップからの発光を均一に混色させなければ、出射光に
色むらが生じてしまい、所望とする白色系の発光を得る
ことができないおそれがった。For this reason, the emitted light becomes white light.
The current supplied to each light-emitting diode had to be adjusted. In addition, there is a problem that the light emitting diodes used have different temperature characteristics, different aging, and different color tones. Furthermore, if the light emitted from each light emitting diode chip is not uniformly mixed, the emitted light may be uneven in color, and a desired white light may not be obtained.

【０００７】そこで、上記問題点を解決した発光ダイオ
ードとして、例えば特開平７−９９３４５号公報や特開
平１０−１９００６６号公報に開示されるものが知られ
ている。Therefore, as a light emitting diode which has solved the above-mentioned problems, those disclosed in, for example, JP-A-7-99345 and JP-A-10-190066 are known.

【０００８】特開平７−９９３４５号公報に開示される
発光ダイオードは、カップの底部にＬＥＤチップが載置
され、カップ内部にＬＥＤチップの発光波長を他の波長
に変換する蛍光物質（または発光チップの発光波長を一
部吸収するフィルター物質）が含有された樹脂（色変換
部材）が充填され、この樹脂を包囲するようにさらに樹
脂が設けられたものである。In the light emitting diode disclosed in Japanese Patent Application Laid-Open No. 7-99345, a LED chip is mounted on the bottom of a cup, and a fluorescent substance (or a light emitting chip) for converting the emission wavelength of the LED chip to another wavelength is provided inside the cup. A resin (color conversion member) containing a filter substance that partially absorbs the emission wavelength of (1) is filled, and a resin is further provided so as to surround the resin.

【０００９】特開平１０−１９００６６号公報に開示さ
れる発光ダイオードは、基板上にダイボンド部材によっ
て固定されたＬＥＤチップと、ＬＥＤチップの上に設け
られＬＥＤチップからの発光の少なくとも一部を吸収し
波長変換して発光する蛍光物質を含む色変換部材とを有
するものである。A light emitting diode disclosed in Japanese Patent Application Laid-Open No. H10-190066 discloses an LED chip fixed on a substrate by a die bonding member, and is provided on the LED chip and absorbs at least a part of light emitted from the LED chip. A color conversion member containing a fluorescent substance that emits light by wavelength conversion.

【００１０】上述したいずれの公報に開示される発光ダ
イオードは、１種類の半導体発光素子自身の発光色から
他の発光色を得るものであり、ＬＥＤチップからの発光
を波長変換した発光ダイオードとして、青色系の発光ダ
イオードの発光と、その発光を吸収し黄色系を発光する
蛍光体からの発光との混色により白色系の発光を得てい
る。The light-emitting diodes disclosed in any of the above publications obtain another light-emitting color from the light-emitting color of one kind of semiconductor light-emitting element itself. White light emission is obtained by mixing light emission of a blue light emitting diode and light emission from a phosphor that absorbs the light emission and emits a yellow light.

【００１１】[0011]

【発明が解決しようとする課題】上述した特開平７−９
９３４５号公報や特開平１０−１９００６６号公報に開
示される発光ダイオードは、ＬＥＤチップの上に色変換
部材が設けられる構成であり、白色光を得る場合、ＬＥ
Ｄチップ上方に放射したＬＥＤチップ自身の青色光と、
ＬＥＤチップ上に設けた色変換部材により変換された黄
色光との分散した光が、人間の目に白色光のように見え
る。SUMMARY OF THE INVENTION The above-mentioned JP-A-7-9
The light-emitting diode disclosed in JP 9345 and JP-A-10-190066 has a configuration in which a color conversion member is provided on an LED chip.
The blue light of the LED chip itself emitted above the D chip,
The dispersed light with the yellow light converted by the color conversion member provided on the LED chip looks like white light to human eyes.

【００１２】ところで、クリアで輝度の高い白色光を得
るためには、青色光と黄色光との分散および分布が均一
かつ一定で有る必要があるが、特開平７−９９３４５号
公報や特開平１０−１９００６６号公報に開示される構
成では、ＬＥＤチップ上方の色変換部材で青色光が遮ら
れ、色変換部材で色変換された光と、ＬＥＤチップ自身
が放射する青色光との合成された光量によって輝度が決
定されるので、色変換部材の分散および分布を均一に行
わねばならず、輝度があまり良くないという問題があっ
た。In order to obtain clear and high-brightness white light, it is necessary that the dispersion and distribution of blue light and yellow light be uniform and constant, as disclosed in JP-A-7-99345 and JP-A-10-99345. In the configuration disclosed in Japanese Patent Publication No. -190066, blue light is blocked by the color conversion member above the LED chip, and the combined light amount of the light that has been color-converted by the color conversion member and the blue light emitted by the LED chip itself. Since the luminance is determined by this, the dispersion and distribution of the color conversion members must be made uniform, and there is a problem that the luminance is not very good.

【００１３】また、ＬＥＤチップからの光を波長変換す
るための蛍光物質を含む色変換部材とは別に、発光チッ
プまたはＬＥＤチップを固定するためのダイボンド部材
（マウント部材）が必要であった。In addition, a die bonding member (mounting member) for fixing the light emitting chip or the LED chip is required separately from the color conversion member containing a fluorescent substance for converting the wavelength of the light from the LED chip.

【００１４】ところで、この種の光源装置としては、例
えば液晶表示装置などの光源として用いるため、上述し
た特開平７−９９３４５号公報や特開平１０−１９００
６６号公報に開示される発光ダイオードにより得られる
発光では充分とは言えず、より長期間の使用環境下にお
いて高輝度な発光（特に、白色系の発光）が望まれてい
た。By the way, as this type of light source device, for use as a light source for a liquid crystal display device, for example, the above-mentioned JP-A-7-99345 and JP-A-10-1900 are used.
The light emission obtained by the light-emitting diode disclosed in Japanese Patent Publication No. 66 cannot be said to be sufficient, and high-luminance light emission (particularly, white light emission) has been desired under a longer use environment.

【００１５】本発明は、上記のような課題を解決するた
めになされたたもので、従来と比較して、長期間の使用
環境下において輝度の高い発光が得られる光源装置を提
供することにある。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a light source device which can emit light with high luminance under a long-term use environment as compared with the related art. is there.

【００１６】[0016]

【課題を解決するための手段】本発明の請求項１に係る
光源装置は、半導体発光素子が透明性を有し、半導体発
光素子を載置する反射性を有したパターン上または／お
よび電気配線パターン上に波長変換材料を混入した透明
樹脂によって半導体発光素子を接着固定したことを特徴
とする。According to a first aspect of the present invention, there is provided a light source device, wherein the semiconductor light emitting element has a transparency and a reflective pattern for mounting the semiconductor light emitting element and / or an electric wiring. The semiconductor light emitting device is characterized in that the semiconductor light emitting element is bonded and fixed on the pattern with a transparent resin mixed with a wavelength conversion material.

【００１７】請求項１に係る光源装置は、半導体発光素
子が透明性を有し、半導体発光素子を載置する反射性を
有したパターン上または／および電気配線パターン上に
波長変換材料を混入した透明樹脂によって半導体発光素
子を接着固定する構成とし、半導体発光素子上方に放射
した半導体発光素子自身の光と、半導体発光素子下方に
放射した光を透明樹脂の波長変換材料により色変換され
た光として再度上方に反射させ、上方に放射光と上方に
反射光とが完全に混ざり合って均一な光を上方に放射す
るので、波長変換材料を分散せずに一様に分布させるこ
とで、従来の半導体発光素子の上に蛍光材を混入した透
明樹脂が塗布、載置あるいは被覆により設けられた構成
よりもクリアで輝度の高い発光を得ることができる。In the light source device according to the first aspect, the semiconductor light emitting element has transparency, and a wavelength conversion material is mixed on a reflective pattern for mounting the semiconductor light emitting element and / or on an electric wiring pattern. The semiconductor light emitting element is bonded and fixed with a transparent resin, and the light emitted from the semiconductor light emitting element itself emitted above the semiconductor light emitting element and the light emitted below the semiconductor light emitting element are converted into light by the color conversion material of the transparent resin. The reflected light is reflected upward again, and the emitted light and the reflected light are completely mixed upward and emit uniform light upward. Clearer and higher-luminance light emission can be obtained than in a configuration in which a transparent resin mixed with a fluorescent material is applied, placed or covered on a semiconductor light emitting element.

【００１８】また、請求項２に係る光源装置は、半導体
発光素子を、パターンまたは／および電気配線パターン
を施し光反射材を混入させた樹脂で凹状にモールド形成
し、凹状部内に波長変換材料を混入した樹脂によって接
着固定することを特徴とする。According to a second aspect of the present invention, in the light source device, the semiconductor light emitting element is formed into a concave shape with a resin in which a pattern and / or an electric wiring pattern is applied and a light reflecting material is mixed, and a wavelength conversion material is formed in the concave portion. It is characterized by being adhered and fixed by the mixed resin.

【００１９】請求項２に係る光源装置は、半導体発光素
子を、パターンまたは／および電気配線パターンを施し
光反射材を混入させた樹脂で凹状にモールド形成し、凹
状部内に波長変換材料を混入した樹脂によって接着固定
するので、従来の半導体発光素子の上に蛍光材を混入し
た透明樹脂が設けられた場合に比べて高輝度の発光を得
ることができ、しかも、半導体発光素子が凹状部内に波
長変換材料を混入した樹脂によって接着固定するので、
より多くの波長変換された光を再度半導体発光素子に戻
して集光性を高めることができる。According to a second aspect of the present invention, in the light source device, the semiconductor light emitting element is formed into a concave shape with a resin in which a pattern and / or an electric wiring pattern is formed and a light reflecting material is mixed, and a wavelength conversion material is mixed in the concave portion. Since the resin is adhered and fixed, it is possible to obtain higher-luminance light emission than in the case where a transparent resin mixed with a fluorescent material is provided on a conventional semiconductor light emitting element, and the semiconductor light emitting element has a wavelength within the concave portion. Since it is adhesively fixed with resin mixed with conversion material,
It is possible to return more wavelength-converted light to the semiconductor light emitting element again to enhance the light collecting property.

【００２０】さらに、請求項３に係る光源装置は、半導
体発光素子が波長変換材料と導電性材料を混入した透明
樹脂によって接着固定されることを特徴とする。Further, the light source device according to claim 3 is characterized in that the semiconductor light emitting element is bonded and fixed by a transparent resin mixed with a wavelength conversion material and a conductive material.

【００２１】請求項３に係る光源装置は、半導体発光素
子が波長変換材料と導電性材料を混入した透明樹脂によ
って接着固定されるので、半導体発光素子自身への静電
気の帯電を防止することができる。In the light source device according to the third aspect, since the semiconductor light emitting element is bonded and fixed by the transparent resin in which the wavelength conversion material and the conductive material are mixed, it is possible to prevent the semiconductor light emitting element itself from being charged with static electricity. .

【００２２】また、請求項４に係る光源装置は、パター
ンまたは／および電気配線パターンを、セラミック基板
上や液晶ポリマー樹脂基板上やガラス布エポキシ樹脂基
板上、またはリードフレームで形成することを特徴とす
る。According to a fourth aspect of the present invention, in the light source device, the pattern and / or the electric wiring pattern is formed on a ceramic substrate, a liquid crystal polymer resin substrate, a glass cloth epoxy resin substrate, or a lead frame. I do.

【００２３】請求項４に係る光源装置は、パターンまた
は／および電気配線パターンを、セラミック基板上や液
晶ポリマー樹脂基板上やガラス布エポキシ樹脂基板上、
またはリードフレームで形成するので、場所や材質にと
らわれず、何処でも接着固定して白色等の発光を得るこ
とができる。According to a fourth aspect of the present invention, in the light source device, the pattern and / or the electric wiring pattern is formed on a ceramic substrate, a liquid crystal polymer resin substrate, a glass cloth epoxy resin substrate,
Alternatively, since it is formed by a lead frame, it can be adhered and fixed anywhere to obtain light emission such as white light regardless of a place or a material.

【００２４】さらに、請求項５に係る光源装置は、半導
体発光素子が透明性を有し、半導体発光素子を載置する
反射性を有したパターン上または／および電気配線パタ
ーン上に波長変換材料を混入した透明樹脂によって形成
された印刷パターン上に半導体発光素子を透明接着剤で
固定することを特徴とする。Further, in the light source device according to the fifth aspect, the semiconductor light emitting element has transparency, and the wavelength conversion material is provided on a reflective pattern and / or an electric wiring pattern on which the semiconductor light emitting element is mounted. The semiconductor light emitting device is fixed on a print pattern formed by the mixed transparent resin with a transparent adhesive.

【００２５】請求項５に係る光源装置は、半導体発光素
子が透明性を有し、半導体発光素子を載置する反射性を
有したパターン上または／および電気配線パターン上に
波長変換材料を混入した透明樹脂によって形成された印
刷パターン上に半導体発光素子を透明接着剤で固定する
ので、均一化、量産化等の品質、生産性の向上に優れた
光源装置を作製することができる。According to a fifth aspect of the present invention, in the light source device, the semiconductor light emitting element has transparency, and a wavelength conversion material is mixed on a reflective pattern for mounting the semiconductor light emitting element and / or on an electric wiring pattern. Since the semiconductor light emitting element is fixed on the print pattern formed of the transparent resin with the transparent adhesive, it is possible to manufacture a light source device excellent in quality and productivity such as uniformity and mass production.

【００２６】さらにまた、請求項６に係る光源装置は、
半導体発光素子が、透明性の有する基板上に活性層を配
するとともに活性層上に透明電極を設けたことを特徴と
する。Further, the light source device according to claim 6 is
The semiconductor light emitting device is characterized in that an active layer is provided on a substrate having transparency and a transparent electrode is provided on the active layer.

【００２７】請求項６に係る光源装置は、半導体発光素
子が、透明性の有する基板上に活性層を配するとともに
活性層上に透明電極を設けたので、波長変換材料を含有
する透明樹脂に向かって光を出射し、これに伴って戻っ
てくる波長変換された光を透過させ、この波長変換され
た光と半導体発光素子自身の発光とにより白色光等の発
光を得ることができる。According to a sixth aspect of the present invention, in the light source device, the semiconductor light emitting element includes the active layer disposed on the transparent substrate and the transparent electrode provided on the active layer. The light is emitted toward the light source, and the wavelength-converted light that returns with the light is transmitted. The light having the wavelength converted and the light emitted from the semiconductor light emitting element itself can emit light such as white light.

【００２８】[0028]

【発明の実施の形態】以下、本発明の実施の形態を添付
図面に基づいて説明する。なお、本発明は、セラミック
基板、液晶ポリマー樹脂基板、ガラス布エポキシ樹脂基
板のいずれかの基板または金属薄板からなるリードフレ
ーム上、または前記基板またはリードフレームのパター
ン上または／および電気配線パターン上に、波長変換材
料を混入した透明樹脂により透明性を有する半導体発光
素子を接着固定し、波長変換材料を混入した樹脂が半導
体発光素子を基板またはリードフレームに固定するため
のダイボンド部材と兼用して構成材料を削減することに
より作業性および経済性に優れ、長期間にわたって高輝
度な発光が得られる光源装置を提供するものである。Embodiments of the present invention will be described below with reference to the accompanying drawings. In addition, the present invention relates to any one of a ceramic substrate, a liquid crystal polymer resin substrate, and a glass cloth epoxy resin substrate or a lead frame made of a thin metal plate, or a pattern of the substrate or the lead frame and / or an electric wiring pattern. A semiconductor light emitting element having transparency is bonded and fixed with a transparent resin mixed with a wavelength conversion material, and the resin mixed with the wavelength conversion material is also used as a die bond member for fixing the semiconductor light emitting element to a substrate or a lead frame. It is an object of the present invention to provide a light source device which is excellent in workability and economy by reducing the number of materials and which can emit light with high luminance for a long period of time.

【００２９】図１は、本発明に係る光源装置の第１実施
の形態を示す全体図である。図１に示すように、第１実
施の形態の光源装置１（１Ａ）は、インジェクションな
いしトランスファーモルドタイプのものであり、パター
ン２、透明樹脂３、半導体発光素子４、ボンディングワ
イヤ５、リード端子６およびモールドケース７から概略
構成される。なお、本例におけるパターン２は電気配線
パターンも含むものである。FIG. 1 is an overall view showing a first embodiment of a light source device according to the present invention. As shown in FIG. 1, the light source device 1 (1A) of the first embodiment is of an injection or transfer mold type, and includes a pattern 2, a transparent resin 3, a semiconductor light emitting element 4, a bonding wire 5, and a lead terminal 6. And a mold case 7. Note that the pattern 2 in this example also includes an electric wiring pattern.

【００３０】パターン２（２ａ，２ｂ）は、インサート
成形によって樹脂にパターン形状を形成した燐青銅材等
からなるリードフレームを挿入してリードフレーム上に
形成されている。The pattern 2 (2a, 2b) is formed on a lead frame by inserting a lead frame made of a phosphor bronze material or the like having a pattern formed in a resin by insert molding.

【００３１】透明樹脂３は、無色透明なエポキシ樹脂等
に無機系の蛍光顔料や有機系の蛍光染料等からなる波長
変換材料を混入させたものである。例えばエポキシ樹脂
に蛍光材（ＹＡＧ）を混入する場合、エポキシ樹脂と蛍
光材との重量比率は、１：３〜１：４程度である。この
透明樹脂３は、パターン２上に塗布したり、蛍光材混入
インク等の印刷により印刷パターンとしてパターン２上
に形成することができる。The transparent resin 3 is obtained by mixing a color conversion material such as an inorganic fluorescent pigment or an organic fluorescent dye into a colorless and transparent epoxy resin or the like. For example, when a fluorescent material (YAG) is mixed into an epoxy resin, the weight ratio between the epoxy resin and the fluorescent material is about 1: 3 to 1: 4. The transparent resin 3 can be applied on the pattern 2 or formed as a print pattern on the pattern 2 by printing with a fluorescent material-mixed ink or the like.

【００３２】図１における透明樹脂３は、モールドケー
ス７の凹状部７ａ内の底面に露出するパターン３と半導
体発光素子４の下面（電極を持たない面）との間に介在
して設けられ、半導体発光素子４をパターン３に固着す
る接着剤としての機能も兼ねている。The transparent resin 3 in FIG. 1 is provided between the pattern 3 exposed on the bottom surface in the concave portion 7a of the mold case 7 and the lower surface (the surface having no electrodes) of the semiconductor light emitting element 4, It also has a function as an adhesive for fixing the semiconductor light emitting element 4 to the pattern 3.

【００３３】透明樹脂３は、青色発光の半導体発光素子
４からの光を（Ｙ，Ｇｄ）3 （Ａｌ，Ｇａ）5 Ｏ12等の
ＹＡＧ（イットリウム・アルミニウム・ガーネット）系
等からなる橙色蛍光顔料や橙色蛍光染料の波長変換材料
を混入した樹脂に投射すると黄色の光が得られる。そし
て、透明樹脂３の波長変換材料により色変換された黄色
光と、半導体発光素子４自身が放射する青色光とが混ざ
り合うことにより、半導体発光素子４上方から放射され
る光が白色光となる。The transparent resin 3 converts the light from the semiconductor light emitting element 4 emitting blue light into an orange fluorescent pigment made of YAG (yttrium aluminum garnet) such as (Y, Gd) 3 (Al, Ga) 5 O 12. When the light is projected onto a resin mixed with a wavelength conversion material such as an orange fluorescent dye, yellow light is obtained. Then, the yellow light color-converted by the wavelength conversion material of the transparent resin 3 is mixed with the blue light emitted by the semiconductor light emitting element 4 itself, so that the light emitted from above the semiconductor light emitting element 4 becomes white light. .

【００３４】また、透明樹脂３は、例えば緑色発光の半
導体発光素子４からの光を赤色蛍光顔料や赤色蛍光染料
の波長変換材料を混入した樹脂に投射すると黄色系の光
が得られ、青色発光の半導体発光素子４からの光を緑色
蛍光顔料や緑色蛍光染料の波長変換材料を混入した樹脂
に投射すると青緑色系の光が得られる。The transparent resin 3 emits yellow light when the light from the green light emitting semiconductor light emitting element 4 is projected onto a resin mixed with a wavelength conversion material such as a red fluorescent pigment or a red fluorescent dye. When the light from the semiconductor light emitting element 4 is projected onto a resin mixed with a wavelength conversion material such as a green fluorescent pigment or a green fluorescent dye, blue-green light is obtained.

【００３５】なお、透明樹脂３としては、無色透明なエ
ポキシ樹脂等に無機系の蛍光顔料や有機系の蛍光染料等
からなる波長変換材料と導電性材料を混入させたものを
使用することもできる。The transparent resin 3 may be a colorless and transparent epoxy resin mixed with a wavelength conversion material such as an inorganic fluorescent pigment or an organic fluorescent dye and a conductive material. .

【００３６】導電性材料は、銀粒子のようなフィラを蛍
光材に悪影響を及ぼさない程度に混入させて、半導体発
光素子４自身のＰ電極とＮ電極とが低電荷でショートし
ない程度の高抵抗値を持ち、電荷の高いものに対しては
導電性を持つような微量の添加により、半導体発光素子
４全体に印加電圧よりも高電位な静電気等が帯電して
も、グランドに流して、特に静電気等に弱いＩｎＧａＡ
ｌＰやＩｎＧａＡｌＮやＩｎＧａＮおよびＧａＮ系の半
導体発光素子自身を静電気等から防いでいる。The conductive material is mixed with a filler such as silver particles so as not to adversely affect the fluorescent material, and has a high resistance such that the P electrode and the N electrode of the semiconductor light emitting device 4 itself are short-circuited by low charge. Even if the semiconductor light-emitting element 4 is charged with static electricity or the like having a higher potential than the applied voltage due to the addition of a very small amount having a value and having conductivity with respect to those having a high electric charge, it flows to the ground, InGaAs weak against static electricity
IP, InGaAlN, InGaN, and GaN-based semiconductor light emitting devices themselves are protected from static electricity and the like.

【００３７】具体的に、導電性材料は、蛍光材混入樹脂
部の体積抵抗を１５０Ｋ〜３００Ｋ程度にし、半導体発
光素子４の順方向抵抗が１６５Ω、また逆耐圧抵抗が
２．５ＭΩである。これにより、半導体発光素子４に対
してリークしない程度の抵抗であるとともに逆耐圧抵抗
よりも低い抵抗値のため、グランドに電流を流して半導
体発光素子４自身への静電気の帯電防止を行うことがで
きる。Specifically, the conductive material has a volume resistance of the fluorescent material mixed resin portion of about 150 K to 300 K, a forward resistance of the semiconductor light emitting element 4 is 165 Ω, and a reverse withstand voltage resistance is 2.5 MΩ. Thus, since the resistance is such that the semiconductor light emitting element 4 does not leak and has a lower resistance value than the reverse breakdown voltage resistance, it is possible to prevent a static electricity from being applied to the semiconductor light emitting element 4 by flowing a current to the ground. it can.

【００３８】半導体発光素子４は、ｎ型層上に活性層を
中心にダブルヘテロ構造からなるＩｎＧａＡｌＰ系、Ｉ
ｎＧａＡｌＮ系、ＩｎＧａＮ系、ＧａＮ系のいずれかの
化合物の半導体チップからなる発光素子であり、有機金
属気相成長法等で製作される。また、半導体発光素子４
自身の基板はＡｌ2 Ｏ3 やＩｎＰサファイア等の透明基
板からなり、この基板上に活性層を配し、活性層上に透
明電極が形成されている。半導体発光素子４に取り付け
る電極は、Ｉｎ2 Ｏ3 、ＳｎＯ2 、ＩＴＯ等からなる導
電性透明電極等をスパッタリング、真空蒸着、化学蒸着
等により生成させて製作する。The semiconductor light emitting device 4 is composed of an InGaAlP-based, heterostructure having a double heterostructure centered on an active layer on an n-type layer.
It is a light emitting element comprising a semiconductor chip of any of nGaAlN-based, InGaN-based, and GaN-based compounds, and is manufactured by metal organic chemical vapor deposition or the like. The semiconductor light emitting device 4
Its own substrate is made of a transparent substrate such as Al 2 O 3 or InP sapphire, on which an active layer is arranged, and a transparent electrode is formed on the active layer. The electrode attached to the semiconductor light emitting element 4 is manufactured by generating a conductive transparent electrode made of In 2 O 3 , SnO 2 , ITO or the like by sputtering, vacuum deposition, chemical vapor deposition or the like.

【００３９】そして、半導体発光素子４は、一方の面
（図１の上面）にアノード電極およびカソード電極を有
しており、電極を持たない他方の面（図１の下面）側が
透明樹脂３上に載置されて固着されている。半導体発光
素子４のアノード電極およびカソード電極は、ボンディ
ングワイヤ５でパターン２ａ，２ｂにワイヤーボンディ
ングされている。The semiconductor light emitting element 4 has an anode electrode and a cathode electrode on one surface (upper surface in FIG. 1), and the other surface (lower surface in FIG. 1) having no electrode is on the transparent resin 3. And is fixed. An anode electrode and a cathode electrode of the semiconductor light emitting element 4 are wire-bonded to the patterns 2a and 2b by bonding wires 5.

【００４０】ボンディングワイヤ５は金線等の導通線か
らなり、半導体発光素子４のアノード電極とパターン２
ａとの間、カソード電極とパターン２ｂとの間をそれぞ
れボンダによって電気的に接続している。The bonding wire 5 is made of a conductive wire such as a gold wire, and is connected to the anode electrode of the semiconductor light emitting element 4 and the pattern 2.
a and the cathode electrode and the pattern 2b are electrically connected by a bonder.

【００４１】リード端子６（６ａ，６ｂ）は、導通性お
よび弾性力のある燐青銅等の銅合金材等からなるリード
フレームをモールドケース７から直接取り出して形成さ
れている。リード端子６ａは、パターン２ａと電気的に
接続されて半導体発光素子４のアノード電極側と等し
く、本発明の光源装置１（１Ａ）としての陽極（＋）と
して使用されるように構成される。The lead terminals 6 (6a, 6b) are formed by directly taking out a lead frame made of a copper alloy material such as phosphor bronze having conductivity and elasticity from the mold case 7. The lead terminal 6a is electrically connected to the pattern 2a, is equal to the anode electrode side of the semiconductor light emitting element 4, and is configured to be used as an anode (+) as the light source device 1 (1A) of the present invention.

【００４２】また、リード端子６ｂは、パターン２ｂと
電気的に接続されて半導体発光素子４のカソード電極側
と等しく、本発明の光源装置１（１Ａ）としての陰極
（−）として使用されるように構成される。The lead terminal 6b is electrically connected to the pattern 2b and is equal to the cathode electrode side of the semiconductor light emitting element 4, so that it is used as a cathode (-) as the light source device 1 (1A) of the present invention. It is composed of

【００４３】モールドケース７は、変成ポリアミド、ポ
リブチレンテレフタレートや芳香族系ポリエステル等か
らなる液晶ポリマなどの絶縁性の有る材料に、チタン酸
バリウム等の白色粉体を混入させて凹状にモールド形成
されており、凹状部７ａ内の底面にパターン２が露出し
ている。The mold case 7 is formed into a concave shape by mixing a white powder such as barium titanate into an insulating material such as a liquid crystal polymer made of modified polyamide, polybutylene terephthalate, aromatic polyester or the like. The pattern 2 is exposed on the bottom surface in the concave portion 7a.

【００４４】また、モールドケース７は、光の反射性と
遮光性の良いチタン酸バリウム等の白色粉体によって半
導体発光素子４の側面側から出光する光を効率良く反射
し、図示しないテーパ状の凹面により上方に出射すると
ともに、本発明の光源装置１（１Ａ）の発光した光を外
部に漏れない様に遮光する。The mold case 7 efficiently reflects the light emitted from the side surface of the semiconductor light emitting element 4 by a white powder such as barium titanate having good light reflectivity and light shielding property. The light is emitted upward by the concave surface, and the light emitted from the light source device 1 (1A) of the present invention is shielded so as not to leak outside.

【００４５】さらに、図示しないが、モールドケース７
内には、パターン２、半導体発光素子４、ボンディング
ワイヤ５等の保護のために無色透明なエポキシ樹脂等が
充填されている。Although not shown, the mold case 7
The inside is filled with a colorless and transparent epoxy resin or the like for protecting the pattern 2, the semiconductor light emitting element 4, the bonding wire 5, and the like.

【００４６】上記のように構成される光源装置１（１
Ａ）では、青色発光の半導体発光素子４を用い、透明樹
脂３として橙色蛍光顔料や橙色蛍光染料の波長変換材料
（または波長変換材料と導電性材料）を混入した樹脂を
用いることにより、クリアで輝度の高い白色光を得るこ
とができる。すなわち、半導体発光素子４の上方から青
色光が放射され、半導体発光素子４の下方に放射した青
色光が透明樹脂３の波長変換材料によって黄色光に色変
換される。この色変換された黄色光は、透明樹脂３の上
方および下方に放射される。透明樹脂３の下方に放射さ
れた黄色光は、下部のリード２ａの面で反射されて上方
に放射される。そして、半導体発光素子４自身が放射す
る青色光と、透明樹脂３の波長変換材料によって色変換
された黄色光とが混ざり合って半導体発光素子４の上方
から白色光が放射される。The light source device 1 (1
In A), a blue light emitting semiconductor light emitting element 4 is used, and as the transparent resin 3, a resin mixed with a wavelength conversion material of an orange fluorescent pigment or an orange fluorescent dye (or a wavelength conversion material and a conductive material) is used to achieve clearness. White light with high luminance can be obtained. That is, blue light is emitted from above the semiconductor light emitting element 4, and the blue light emitted below the semiconductor light emitting element 4 is converted into yellow light by the wavelength conversion material of the transparent resin 3. The color-converted yellow light is emitted above and below the transparent resin 3. The yellow light emitted below the transparent resin 3 is reflected by the surface of the lower lead 2a and emitted upward. Then, the blue light emitted by the semiconductor light emitting element 4 itself and the yellow light color-converted by the wavelength conversion material of the transparent resin 3 are mixed, and white light is emitted from above the semiconductor light emitting element 4.

【００４７】次に、図２は本発明に係る光源装置の第２
実施の形態を示す全体図である。なお、図１に示す第１
実施の形態の光源装置と略同等の構成要素には同一番号
を付して説明する。FIG. 2 shows a second embodiment of the light source device according to the present invention.
FIG. 1 is an overall view showing an embodiment. In addition, the first shown in FIG.
Components that are substantially the same as those of the light source device according to the embodiment will be described with the same reference numerals.

【００４８】図２に示すように、第２実施の形態の光源
装置１Ｂ（１）は、チップタイプのものであり、基板１
１、パターン２、透明樹脂３、半導体発光素子４、ボン
ディングワイヤ５、端子電極１６および出光モールド部
１７から構成されている。なお、本例におけるパターン
２は電気配線パターンも含むものである。As shown in FIG. 2, the light source device 1B (1) of the second embodiment is of a chip type, and
1, a pattern 2, a transparent resin 3, a semiconductor light emitting element 4, a bonding wire 5, a terminal electrode 16, and a light emitting mold part 17. Note that the pattern 2 in this example also includes an electric wiring pattern.

【００４９】基板１１は、電気絶縁性に優れたセラミッ
ク基板、液晶ポリマー樹脂基板、ガラス布エポキシ樹脂
基板等の基板からなり、表面にはパターン２（２ａ，２
ｂ）が形成される。The substrate 11 is composed of a substrate such as a ceramic substrate having excellent electrical insulation, a liquid crystal polymer resin substrate, a glass cloth epoxy resin substrate, and the like, and has a pattern 2 (2a, 2
b) is formed.

【００５０】さらに説明すると、セラミック基板からな
る基板１１は、ＡｌＯやＳｉＯを主成分とし、さらにＺ
ｒＯ、ＴｉＯ、ＴｉＣ、ＳｉＣおよびＳｉＮ等との化合
物からなり、耐熱性や硬度、強度に優れ、白色系の表面
を持ち、半導体発光素子４からの発光された光を効率良
く反射する。More specifically, the substrate 11 made of a ceramic substrate contains AlO or SiO as a main component and further has a Z
It is made of a compound with rO, TiO, TiC, SiC, SiN, etc., has excellent heat resistance, hardness and strength, has a white surface, and efficiently reflects light emitted from the semiconductor light emitting element 4.

【００５１】また、液晶ポリマー樹脂やガラス布エポキ
シ樹脂からなる基板１１は、液晶ポリマーやガラス布エ
ポキシ樹脂などの絶縁性の有る材料に、チタン酸バリウ
ム等の白色粉体を混入または塗布させて成形し、半導体
発光素子４からの発光された光を効率良く反射する。The substrate 11 made of a liquid crystal polymer resin or a glass cloth epoxy resin is molded by mixing or applying a white powder such as barium titanate to an insulating material such as a liquid crystal polymer or a glass cloth epoxy resin. Then, the light emitted from the semiconductor light emitting element 4 is efficiently reflected.

【００５２】なお、基板１１としては、珪素樹脂、紙エ
ポキシ樹脂、合成繊維布エポキシ樹脂および紙フェノー
ル樹脂等の積層板や変成ポリイミド、ポリブチレンテレ
フタレート、ポリカーボネートや芳香族ポリエステル等
からなる板にパターン印刷を施して半導体発光素子４か
らの発光された光を効率良く反射する構成としてもよ
い。The substrate 11 is formed by pattern printing on a laminate of silicon resin, paper epoxy resin, synthetic fiber cloth epoxy resin, paper phenol resin or the like, or a plate made of modified polyimide, polybutylene terephthalate, polycarbonate, aromatic polyester or the like. May be applied to efficiently reflect the light emitted from the semiconductor light emitting element 4.

【００５３】パターン２（２ａ，２ｂ）は、セラミック
基板、液晶ポリマー樹脂、ガラス布エポキシ樹脂基板の
いずれかの基板１１上に真空蒸着スパッタリング、イオ
ンプレーティング、ＣＶＤ（化学蒸着）、エッチング
（ウエット、ドライ）等により電気的接続をするパター
ン形状に形成されており、金属メッキを施した後、さら
に金や銀等の貴金属メッキを施し、端子電極１６（１６
ａ，１６ｂ）に電気的に接続される。The pattern 2 (2a, 2b) is formed by vacuum deposition sputtering, ion plating, CVD (chemical vapor deposition), and etching (wet, wet) on a substrate 11 of a ceramic substrate, a liquid crystal polymer resin, or a glass cloth epoxy resin substrate. It is formed in a pattern shape for electrical connection by dry) or the like. After metal plating, a noble metal plating such as gold or silver is further applied to the terminal electrode 16 (16).
a, 16b).

【００５４】透明樹脂３は、無色透明なエポキシ樹脂等
に無機系の蛍光顔料や有機系の蛍光染料等からなる波長
変換材料を混入させたものである。例えばエポキシ樹脂
に蛍光材（ＹＡＧ）を混入する場合、エポキシ樹脂と蛍
光材との重量比率は、１：３〜１：４程度である。この
透明樹脂３は、パターン２上に塗布したり、蛍光材混入
インク等の印刷により印刷パターンとしてパターン２上
に形成することができる。The transparent resin 3 is obtained by mixing a color conversion material such as an inorganic fluorescent pigment or an organic fluorescent dye into a colorless and transparent epoxy resin or the like. For example, when a fluorescent material (YAG) is mixed into an epoxy resin, the weight ratio between the epoxy resin and the fluorescent material is about 1: 3 to 1: 4. The transparent resin 3 can be applied on the pattern 2 or formed as a print pattern on the pattern 2 by printing with a fluorescent material-mixed ink or the like.

【００５５】図２における透明樹脂３は、基板１１上の
パターン３と半導体発光素子４の下面（電極を持たない
面）との間に介在して設けられ、半導体発光素子４をパ
ターン３に固着する接着剤としての機能も兼ねている。The transparent resin 3 in FIG. 2 is provided between the pattern 3 on the substrate 11 and the lower surface of the semiconductor light emitting element 4 (the surface having no electrodes), and fixes the semiconductor light emitting element 4 to the pattern 3. It also has the function of an adhesive to be used.

【００５６】透明樹脂３は、青色発光の半導体発光素子
４からの光を（Ｙ，Ｇｄ）3 （Ａｌ，Ｇａ）5 Ｏ12等の
ＹＡＧ（イットリウム・アルミニウム・ガーネット）系
等からなる橙色蛍光顔料や橙色蛍光染料の波長変換材料
を混入した樹脂に投射すると黄色の光が得られる。そし
て、透明樹脂３の波長変換材料により色変換された黄色
光と、半導体発光素子４自身が放射する青色光とが混ざ
り合うことにより、半導体発光素子４上方から放射され
る光が白色光となる。The transparent resin 3 is an orange fluorescent pigment made of YAG (yttrium aluminum garnet) such as (Y, Gd) 3 (Al, Ga) 5 O 12 or the like from the blue light emitting semiconductor light emitting element 4. When the light is projected onto a resin mixed with a wavelength conversion material such as an orange fluorescent dye, yellow light is obtained. Then, the yellow light color-converted by the wavelength conversion material of the transparent resin 3 is mixed with the blue light emitted by the semiconductor light emitting element 4 itself, so that the light emitted from above the semiconductor light emitting element 4 becomes white light. .

【００５７】また、透明樹脂３は、例えば緑色発光の半
導体発光素子４からの光を赤色蛍光顔料や赤色蛍光染料
の波長変換材料を混入した樹脂に投射すると黄色系の光
が得られ、青色発光の半導体発光素子４からの光を緑色
蛍光顔料や緑色蛍光染料の波長変換材料を混入した樹脂
に投射すると青緑色系の光が得られる。The transparent resin 3 emits yellow light when the light from the semiconductor light emitting element 4 for emitting green light is projected onto a resin mixed with a wavelength conversion material such as a red fluorescent pigment or a red fluorescent dye. When the light from the semiconductor light emitting element 4 is projected onto a resin mixed with a wavelength conversion material such as a green fluorescent pigment or a green fluorescent dye, blue-green light is obtained.

【００５８】なお、透明樹脂３としては、無色透明なエ
ポキシ樹脂等に無機系の蛍光顔料や有機系の蛍光染料等
からなる波長変換材料と導電性材料を混入させたものを
使用することもできる。The transparent resin 3 may be made of a colorless and transparent epoxy resin mixed with a wavelength conversion material such as an inorganic fluorescent pigment or an organic fluorescent dye and a conductive material. .

【００５９】導電性材料は、銀粒子のようなフィラを蛍
光材に悪影響を及ぼさない程度に混入させて、半導体発
光素子４自身のＰ電極とＮ電極とが低電荷でショートし
ない程度の高抵抗値を持ち、電荷の高いものに対しては
導電性を持つような微量の添加により、半導体発光素子
４全体に印加電圧よりも高電位な静電気等が帯電して
も、グランドに流して、特に静電気等に弱いＩｎＧａＡ
ｌＰやＩｎＧａＡｌＮやＩｎＧａＮおよびＧａＮ系の半
導体発光素子自身を静電気等から防いでいる。The conductive material is mixed with a filler such as silver particles so as not to adversely affect the fluorescent material, and has a high resistance such that the P electrode and the N electrode of the semiconductor light emitting device 4 itself are short-circuited by low charge. Even if the semiconductor light-emitting element 4 is charged with static electricity or the like having a higher potential than the applied voltage due to the addition of a very small amount having a value and having conductivity with respect to those having a high electric charge, it flows to the ground, InGaAs weak against static electricity
IP, InGaAlN, InGaN, and GaN-based semiconductor light emitting devices themselves are protected from static electricity and the like.

【００６０】具体的に、導電性材料は、蛍光材混入樹脂
部の体積抵抗を１５０Ｋ〜３００Ｋ程度にし、半導体発
光素子４の順方向抵抗が１６５Ω、また逆耐圧抵抗が
２．５ＭΩである。これにより、半導体発光素子４に対
してリークしない程度の抵抗であるとともに逆耐圧抵抗
よりも低い抵抗値のため、グランドに電流を流して半導
体発光素子４自身への静電気の帯電防止を行うことがで
きる。Specifically, the conductive material is such that the volume resistance of the fluorescent material-mixed resin portion is about 150 K to 300 K, the forward resistance of the semiconductor light emitting element 4 is 165 Ω, and the reverse withstand voltage resistance is 2.5 MΩ. Thus, since the resistance is such that the semiconductor light emitting element 4 does not leak and has a lower resistance value than the reverse breakdown voltage resistance, it is possible to prevent a static electricity from being applied to the semiconductor light emitting element 4 by flowing a current to the ground. it can.

【００６１】半導体発光素子４は、ｎ型層上に活性層を
中心にダブルヘテロ構造からなるＩｎＧａＡｌＰ系、Ｉ
ｎＧａＡｌＮ系、ＩｎＧａＮ系、ＧａＮ系のいずれかの
化合物の半導体チップからなる発光素子であり、有機金
属気相成長法等で製作されている。また、半導体発光素
子４自身の基板はＡｌ2 Ｏ3 やＩｎＰサファイア等の透
明基板からなり、この基板上に活性層を配し、活性層上
に透明電極が形成されている。半導体発光素子４に取り
付ける電極は、Ｉｎ2 Ｏ3 、ＳｎＯ2 、ＩＴＯ等からな
る導電性透明電極等をスパッタリング、真空蒸着、化学
蒸着等により生成させて製作する。The semiconductor light-emitting device 4 is composed of an InGaAlP-based, heterostructure having a double heterostructure centered on an active layer on an n-type layer.
This is a light-emitting element composed of a semiconductor chip of any of nGaAlN-based, InGaN-based, and GaN-based compounds, and is manufactured by metal organic chemical vapor deposition or the like. The substrate of the semiconductor light emitting element 4 itself is made of a transparent substrate such as Al 2 O 3 or InP sapphire, and an active layer is provided on the substrate, and a transparent electrode is formed on the active layer. The electrode attached to the semiconductor light emitting element 4 is manufactured by generating a conductive transparent electrode made of In 2 O 3 , SnO 2 , ITO or the like by sputtering, vacuum deposition, chemical vapor deposition or the like.

【００６２】そして、半導体発光素子４は、一方の面
（図２の上面）にアノード電極およびカソード電極を有
しており、電極を持たない他方の面（図２の下面）側が
透明樹脂３によって固着されている。半導体発光素子４
のアノード電極およびカソード電極は、ボンディングワ
イヤ５でパターン２ａ，２ｂにワイヤーボンディングさ
れている。The semiconductor light emitting element 4 has an anode electrode and a cathode electrode on one surface (upper surface in FIG. 2), and the other surface (lower surface in FIG. 2) having no electrode is made of a transparent resin 3. It is fixed. Semiconductor light emitting element 4
The anode electrode and the cathode electrode are wire-bonded to the patterns 2a and 2b by a bonding wire 5.

【００６３】ボンディングワイヤ５は金線等の導通線か
らなり、半導体発光素子４のアノード電極とパターン２
ａとの間、カソード電極とパターン２ｂとの間をそれぞ
れボンダによって電気的に接続している。The bonding wire 5 is made of a conductive wire such as a gold wire, and is connected to the anode electrode of the semiconductor light emitting element 4 and the pattern 2.
a and the cathode electrode and the pattern 2b are electrically connected by a bonder.

【００６４】端子電極１６（１６ａ，１６ｂ）は、基板
１１の端部に電気伝導性の良い金属等で厚く金属メッキ
をしたり導通性および弾性力のある燐青銅材等を機械的
に取り付けることにより形成される。The terminal electrodes 16 (16 a, 16 b) are formed by thickly plating a metal with good electrical conductivity or the like with a conductive or elastic phosphor bronze material or the like on the end of the substrate 11. Formed by

【００６５】端子電極１６ａは、パターン２ａと電気的
に接続されて半導体発光素子４のアノード電極側と等し
く、本発明の光源装置１（１Ｂ）としての陽極（＋）と
して使用されるように構成される。The terminal electrode 16a is electrically connected to the pattern 2a, is equal to the anode electrode side of the semiconductor light emitting element 4, and is configured to be used as an anode (+) as the light source device 1 (1B) of the present invention. Is done.

【００６６】端子電極１６ｂは、パターン２ｂと電気的
に接続されて半導体発光素子４のカソード電極側と等し
く、本発明の光源装置１（１Ｂ）としての陰極（−）と
して使用されるように構成される。The terminal electrode 16b is electrically connected to the pattern 2b, is equal to the cathode electrode side of the semiconductor light emitting element 4, and is configured to be used as a cathode (-) as the light source device 1 (1B) of the present invention. Is done.

【００６７】出光モールド部１７は、無色透明なエポキ
シ樹脂からなり、矩形状に成型され、半導体発光素子４
の発光層からの光（上部の電極側や側面の４方）を効率
良く出射する。また、出光モールド部１７は、パターン
２、半導体発光素子４、ボンディングワイヤ５等を保護
している。The light emitting mold section 17 is made of a colorless and transparent epoxy resin, is molded in a rectangular shape, and
From the light emitting layer (the upper electrode side and the four sides) are efficiently emitted. Further, the light emitting mold section 17 protects the pattern 2, the semiconductor light emitting element 4, the bonding wire 5, and the like.

【００６８】なお、図示はしないが、出光モールド部１
７は、光線が一方向性になるドーム型等、目的や仕様に
合った自由な形状に形成することができる。Although not shown, the light emitting mold 1
7 can be formed in any shape suitable for the purpose and specification, such as a dome shape in which light rays are unidirectional.

【００６９】上記のように構成される光源装置１（１
Ｂ）では、青色発光の半導体発光素子４を用い、透明樹
脂３として橙色蛍光顔料や橙色蛍光染料の波長変換材料
（または波長変換材料と導電性材料）を混入した樹脂を
用いることにより、クリアで輝度の高い白色光を得るこ
とができる。すなわち、半導体発光素子４の上方から青
色光が放射され、半導体発光素子４の下方に放射した青
色光が透明樹脂３の波長変換材料によって黄色光に色変
換される。この色変換された黄色光は、透明樹脂３の上
方および下方に放射される。透明樹脂３の下方に放射さ
れた黄色光は、下部のリード２ａの面で反射されて上方
に放射される。そして、半導体発光素子４自身が放射す
る青色光と、透明樹脂３の波長変換材料によって色変換
された黄色光とが混ざり合って半導体発光素子４の上方
から白色光が放射される。The light source device 1 (1
In B), a blue light emitting semiconductor light emitting element 4 is used, and as a transparent resin 3, a resin mixed with a wavelength conversion material of an orange fluorescent pigment or an orange fluorescent dye (or a wavelength conversion material and a conductive material) is used to achieve clearness. White light with high luminance can be obtained. That is, blue light is emitted from above the semiconductor light emitting element 4, and the blue light emitted below the semiconductor light emitting element 4 is converted into yellow light by the wavelength conversion material of the transparent resin 3. The color-converted yellow light is emitted above and below the transparent resin 3. The yellow light emitted below the transparent resin 3 is reflected by the surface of the lower lead 2a and emitted upward. Then, the blue light emitted by the semiconductor light emitting element 4 itself and the yellow light color-converted by the wavelength conversion material of the transparent resin 3 are mixed, and white light is emitted from above the semiconductor light emitting element 4.

【００７０】ところで、図１および図２に示す構成で
は、半導体発光素子４が一方のパターン２ａ上に透明樹
脂３により固着されたものであるが、図３（ａ）〜
（ｃ）に示すような構成としてもよい。By the way, in the configuration shown in FIGS. 1 and 2, the semiconductor light emitting element 4 is fixed on one of the patterns 2a by the transparent resin 3, but FIGS.
The configuration as shown in FIG.

【００７１】図３（ａ）に示す構成では、パターン２
ａ，２ｂが形成されていない部分、具体的には、モール
ドケース７の凹状部７ａ内の底面に表出するパターン２
ａとパターン２ｂの間の部分（絶縁パターンを含む）、
又は基板１１上のパターン２ａ，２ｂ間の部分（絶縁パ
ターンを含む）に透明樹脂３を介して半導体発光素子４
が固着されており、半導体発光素子４のアノード電極お
よびカソード電極がそれぞれパターン２ａ，２ｂにボン
ディングワイヤ５によりワイヤーボンディングされてい
る。In the configuration shown in FIG.
a, 2b are not formed, specifically, the pattern 2 exposed on the bottom surface in the concave portion 7a of the mold case 7.
a between the pattern a and the pattern 2b (including the insulating pattern);
Alternatively, the semiconductor light emitting element 4 may be interposed between the patterns 2 a and 2 b (including the insulating pattern) on the substrate 11 via the transparent resin 3.
Are fixed, and the anode electrode and the cathode electrode of the semiconductor light emitting element 4 are wire-bonded to the patterns 2a and 2b by bonding wires 5, respectively.

【００７２】図３（ｂ）に示す構成では、モールドケー
ス７の凹状部７ａ内の底面に表出するパターン２ａ，２
ｂ間、又は基板１１上のパターン２ａ，２ｂ間に跨がっ
て透明樹脂３を介して半導体発光素子４が固着されてお
り、半導体発光素子４のアノード電極およびカソード電
極がそれぞれパターン２ａ，２ｂにボンディングワイヤ
５によりワイヤーボンディングされている。その際、透
明樹脂３としては、導電性材料を含有しない波長変換材
料を混入した絶縁性部材が使用される。また、透明樹脂
３として、導電性材料および波長変換材料を混入したも
のを使用する場合には、図示しないが、透明樹脂３をパ
ターンのマイナス側のみに接地（接触する様に載置）す
る。In the configuration shown in FIG. 3B, the patterns 2a, 2 exposed on the bottom surface in the concave portion 7a of the mold case 7 are formed.
The semiconductor light emitting element 4 is fixed via the transparent resin 3 so as to extend between the patterns 2a and 2b on the substrate 11 or between the patterns 2a and 2b on the substrate 11, and the anode electrode and the cathode electrode of the semiconductor light emitting element 4 are Are bonded by a bonding wire 5. At this time, as the transparent resin 3, an insulating member mixed with a wavelength conversion material containing no conductive material is used. In the case where a material mixed with a conductive material and a wavelength conversion material is used as the transparent resin 3, the transparent resin 3 is grounded (mounted so as to be in contact with) only on the minus side of the pattern, though not shown.

【００７３】図３（ｃ）に示す構成では、パターン２
ａ，２ｂが形成されていない部分、具体的には、モール
ドケース７の凹状部７ａ内、又は基板１１に形成された
凹状部１１ａ内の底面および周面に透明樹脂３を介して
半導体発光素子４が固着されており、半導体発光素子４
のアノード電極およびカソード電極がそれぞれパターン
２ａ，２ｂにボンディングワイヤ５によりワイヤーボン
ディングされている。この構成によれば、半導体発光素
子４の下面および側面４方から出射された光は、透明樹
脂３を通り波長変換された後、凹状部７ａ又は凹状部１
１ａで反射されて再び半導体発光素子４に戻り、この波
長変換された光と半導体発光素子４自身の光の混色によ
る光が上面から出射される。In the configuration shown in FIG.
a, 2b are not formed, more specifically, the semiconductor light emitting element is formed on the bottom and the peripheral surface of the concave portion 7a of the mold case 7 or the concave portion 11a formed on the substrate 11 via the transparent resin 3. 4, the semiconductor light emitting element 4
The anode electrode and the cathode electrode are wire-bonded to the patterns 2a and 2b by bonding wires 5, respectively. According to this configuration, light emitted from the lower surface and the four side surfaces of the semiconductor light emitting element 4 passes through the transparent resin 3 and is wavelength-converted, and then the concave portion 7a or the concave portion 1 is formed.
The light reflected by 1a returns to the semiconductor light emitting element 4 again, and the light resulting from the color mixture of the wavelength-converted light and the light of the semiconductor light emitting element 4 itself is emitted from the upper surface.

【００７４】なお、図３（ｃ）の例では、半導体発光素
子４の下面および側面４方が各々透明樹脂３を介して凹
状部７ａ内又は凹状部１１ａ内に固着されているが、半
導体発光素子４の下面のみを透明樹脂３を介して凹状部
７ａ内又は凹状部１１ａ内に固着した構成としてもよ
い。また、図３（ｃ）の例では、半導体発光素子４の上
部が凹状部７ａ（又は１１ａ）より突出して固着されて
いるが、半導体発光素子４全体を凹状部７ａ（又は１１
ａ）内に納めるように固着してもよい。In the example of FIG. 3C, the lower surface and the side surface 4 of the semiconductor light emitting element 4 are fixed in the concave portion 7a or the concave portion 11a via the transparent resin 3, respectively. Only the lower surface of the element 4 may be fixed to the inside of the concave portion 7a or the inside of the concave portion 11a via the transparent resin 3. Further, in the example of FIG. 3C, the upper portion of the semiconductor light emitting device 4 is fixed so as to protrude from the concave portion 7a (or 11a), but the entire semiconductor light emitting device 4 is fixed to the concave portion 7a (or 11a).
It may be fixed so as to fit in a).

【００７５】そして、上述した図３（ａ）〜（ｃ）の構
成において、橙色蛍光顔料や橙色蛍光染料を混入した樹
脂で透明樹脂３を形成し、半導体発光素子４を青色発光
の半導体発光素子４とすれば、半導体発光素子４の下方
向に放射した光が透明樹脂４３の波長変換材料で黄色光
に色変換され、この黄色光が上方および下方に放射し、
下方に放射された黄色光が下部で反射して上方に戻り、
これら黄色光が半導体発光素子４から直接上方に放射し
た青色光と混合し、半導体発光素子４の上面から白色光
を出射させることができる。3A to 3C, the transparent resin 3 is formed of a resin mixed with an orange fluorescent pigment or an orange fluorescent dye, and the semiconductor light emitting element 4 is changed to a blue light emitting semiconductor light emitting element. 4, the light emitted downward from the semiconductor light emitting element 4 is color-converted into yellow light by the wavelength conversion material of the transparent resin 43, and the yellow light is emitted upward and downward,
The yellow light emitted downward reflects at the bottom and returns upward,
The yellow light is mixed with the blue light directly emitted upward from the semiconductor light emitting element 4, and white light can be emitted from the upper surface of the semiconductor light emitting element 4.

【００７６】ところで、図示はしないが、反射性を有し
たパターン（または／および電気配線パターン）上に波
長変換材料を混入した透明樹脂によって印刷パターンを
形成し、この印刷パターン上に半導体発光素子を透明接
着剤で固定する構成としてもよい。Although not shown, a printed pattern is formed on a reflective pattern (or / and an electrical wiring pattern) using a transparent resin mixed with a wavelength conversion material, and a semiconductor light emitting element is formed on the printed pattern. It may be configured to be fixed with a transparent adhesive.

【００７７】その際、使用される透明接着剤は、粘性の
低い液状のシアノアクリレート系の透明接着剤である。
これにより、エポキシ樹脂系の接着剤と異なり、発熱を
伴わずに半導体発光素子に対し悪影響を及ぼさずに半導
体発光素子を瞬間的に接着固定できるとともに硬化に熱
を必要とせず、また接着スピードが速いので、生産性、
経済性にも富んでいる。In this case, the transparent adhesive used is a liquid cyanoacrylate-based transparent adhesive having low viscosity.
As a result, unlike an epoxy resin-based adhesive, the semiconductor light emitting device can be instantaneously bonded and fixed without generating heat and without adversely affecting the semiconductor light emitting device. Fast, productivity,
It is also very economical.

【００７８】また、粘性の高いシアノアクリレート系の
透明接着剤に波長変換材料（波長変換材料と導電性材
料）を混入させた透明樹脂を用いれば、印刷工程と接着
工程を一度で行うことが可能である。Further, if a transparent resin in which a wavelength conversion material (a wavelength conversion material and a conductive material) is mixed with a viscous cyanoacrylate-based transparent adhesive is used, the printing step and the bonding step can be performed at once. It is.

【００７９】[0079]

【実施例】従来の半導体発光素子の上に蛍光材を混入し
た透明樹脂を設けた構成と本実施例の半導体発光素子の
下に蛍光材を混入した透明樹脂で接着固定または蛍光材
を混入した透明樹脂上に半導体発光素子を載置（接着）
した構成について、弊社のエレメントタイプ（Ｌ１８０
０）に実装した物について下記に示す条件で光度測定の
比較を行った。その測定結果を下記表１に示す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A conventional semiconductor light emitting device is provided with a transparent resin mixed with a fluorescent material on top of the conventional semiconductor light emitting device, and a semiconductor resin light emitting device of the present embodiment is bonded or fixed with a transparent resin mixed with a fluorescent material or mixed with a fluorescent material. Placing semiconductor light-emitting elements on transparent resin (adhesion)
Of our configuration, our element type (L180
A comparison of luminous intensity measurement was performed on the device mounted in 0) under the following conditions. The measurement results are shown in Table 1 below.

【００８０】使用チップ：Ｅ１Ｃ１０−１Ｂ００１（Ｂ
Ｌチップ−豊田合成） 使用蛍光材：（ＹＡＧ８１００４）、使用樹脂：エポキ
シ樹脂（従来および本実施例同材料） 仕様：従来タイプ（蛍光材を半導体発光素子の上部に設
ける）、本実施例タイプ（蛍光材を半導体発光素子の下
部に設ける） 測定条件：１チップ当たりの電流１０ｍＡ時の光度を測
定 測定数量：各１３個 測定機材：ＬＥＤテスターUsed chip: E1C10-1B001 (B
L chip-Toyoda Gosei) Fluorescent material used: (YAG81004), resin used: epoxy resin (same material as in the conventional and this embodiment) Specifications: Conventional type (the fluorescent material is provided above the semiconductor light emitting element), this embodiment type ( (A fluorescent material is provided below the semiconductor light emitting element.) Measurement conditions: Measure luminous intensity at a current of 10 mA per chip Measurement quantity: 13 each Measurement equipment: LED tester

【００８１】[0081]

【表１】 [Table 1]

【００８２】表１を見て明らかなように、従来の構成に
比べて本実施例の構成の方が平均光度約３２．５％向上
することが判る。As is apparent from Table 1, it can be seen that the average luminous intensity of the structure of this embodiment is improved by about 32.5% as compared with the conventional structure.

【００８３】このように、本例における光源装置１で
は、反射性を有したパターン上または／および電気配線
パターン上に波長変換材料（または波長変換材料と導電
性材料）を混入した透明樹脂３によって半導体発光素子
４を接着固定し、半導体発光素子４の１方向（上面）以
外の方向（下面、側面の４方）に出射された光を波長変
換材料（または波長変換材料と導電性材料）を混入した
透明樹脂３により波長変換させ、この波長変換された光
を再度半導体発光素子４を透過させることにより、上記
１方向から混合光として出射させている。As described above, in the light source device 1 of the present embodiment, the transparent resin 3 in which the wavelength conversion material (or the wavelength conversion material and the conductive material) is mixed on the reflective pattern and / or the electric wiring pattern. The semiconductor light emitting element 4 is adhered and fixed, and light emitted in directions (lower and side directions) other than one direction (upper surface) of the semiconductor light emitting element 4 is converted into a wavelength converting material (or a wavelength converting material and a conductive material). The wavelength is converted by the mixed transparent resin 3, and the wavelength-converted light is transmitted through the semiconductor light emitting element 4 again, so that the light is emitted as mixed light from the one direction.

【００８４】そして、白色光を得る場合には、半導体発
光素子４として青色光を出射するものを用い、透明樹脂
３として橙色蛍光顔料や橙色蛍光染料の波長変換材料
（または波長変換材料と導電性材料）を混入した樹脂を
用いることにより、半導体発光素子４自身の青色光が半
導体発光素子４の上方に放射され、半導体発光素子４下
方に放射した青色光が透明樹脂３の波長変換材料により
変換された黄色光として再度上方に反射し、上方に放射
した青色光と上方に反射した黄色光とが完全に混ざり合
って均一な白色光を上方の放射する。これにより、クリ
アで輝度の高い白色光を得ることができるとともに波長
変換材料（色変換部材）を分散せずに一様に分布させれ
ばよい。When white light is to be obtained, a semiconductor light emitting element 4 that emits blue light is used, and a transparent resin 3 is a wavelength conversion material of an orange fluorescent pigment or an orange fluorescent dye (or a wavelength conversion material and a conductive material). ), The blue light of the semiconductor light emitting element 4 itself is emitted above the semiconductor light emitting element 4, and the blue light emitted below the semiconductor light emitting element 4 is converted by the wavelength conversion material of the transparent resin 3. The reflected yellow light is reflected upward again, and the blue light emitted upward and the yellow light reflected upward are completely mixed to emit uniform white light upward. Thereby, clear and high-luminance white light can be obtained, and the wavelength conversion material (color conversion member) may be uniformly distributed without being dispersed.

【００８５】[0085]

【発明の効果】以上のように、請求項１に係る光源装置
は、半導体発光素子が透明性を有し、半導体発光素子を
載置する反射性を有したパターン上または／および電気
配線パターン上に波長変換材料を混入した透明樹脂によ
って半導体発光素子を接着固定する構成とし、半導体発
光素子上方に放射した半導体発光素子自身の光と、半導
体発光素子下方に放射した光を透明樹脂の波長変換材料
により色変換された光として再度上方に反射させ、上方
に放射光と上方に反射光とが完全に混ざり合って均一な
光を上方に放射するので、波長変換材料を分散せずに一
様に分布させることで、従来の半導体発光素子の上に蛍
光材を混入した透明樹脂が塗布、載置あるいは被覆によ
り設けられた構成よりもクリアで輝度の高い発光を得る
ことができる。As described above, in the light source device according to the first aspect, the semiconductor light emitting element has transparency, and the semiconductor light emitting element has a reflective pattern and / or an electrical wiring pattern on which the semiconductor light emitting element is mounted. The semiconductor light-emitting element is bonded and fixed with a transparent resin mixed with a wavelength-converting material, and the light emitted from the semiconductor light-emitting element itself emitted above the semiconductor light-emitting element and the light emitted below the semiconductor light-emitting element are converted into a wavelength-converting material of a transparent resin. The reflected light is reflected upward again as color-converted light, and the emitted light and the reflected light are completely mixed upward and emit uniform light upward, so that the wavelength conversion material is uniformly dispersed without dispersion. By distributing, it is possible to obtain clearer and brighter light emission than a configuration in which a transparent resin mixed with a fluorescent material is applied, placed or covered by a conventional semiconductor light emitting element.

【００８６】請求項２に係る光源装置は、半導体発光素
子を、パターンまたは／および電気配線パターンを施し
光反射材を混入させた樹脂で凹状にモールド形成し、凹
状部内に波長変換材料を混入した樹脂によって接着固定
するので、従来の半導体発光素子の上に蛍光材を混入し
た透明樹脂が設けられた場合に比べて高輝度の発光を得
ることができ、しかも、半導体発光素子が凹状部内、例
えば凹状部の底面または／および側面４方を波長変換材
料を混入した樹脂によって接着固定するので、より多く
の波長変換された光を再度半導体発光素子に戻して集光
性を高めることができる。In the light source device according to the second aspect, the semiconductor light emitting element is molded into a concave shape with a resin in which a pattern and / or an electric wiring pattern is applied and a light reflecting material is mixed, and a wavelength conversion material is mixed in the concave portion. Since the resin is adhered and fixed, it is possible to obtain higher-luminance light emission than in the case where a transparent resin mixed with a fluorescent material is provided on a conventional semiconductor light emitting element, and furthermore, the semiconductor light emitting element is formed in a concave portion, for example. Since the bottom surface and / or the four side surfaces of the concave portion are bonded and fixed with a resin mixed with a wavelength conversion material, more wavelength-converted light can be returned to the semiconductor light emitting element again to improve the light collecting property.

【００８７】請求項３に係る光源装置は、半導体発光素
子が波長変換材料と導電性材料を混入した透明樹脂によ
って接着固定されるので、半導体発光素子自身に帯電し
た静電気を導電性材料を通じて外部に流すことが可能と
なり、半導体発光素子自身への静電気の帯電を防止する
ことができる。In the light source device according to the third aspect, since the semiconductor light emitting element is bonded and fixed by the transparent resin in which the wavelength conversion material and the conductive material are mixed, the static electricity charged in the semiconductor light emitting element itself is externally transmitted through the conductive material. This makes it possible to prevent the semiconductor light emitting element itself from being charged with static electricity.

【００８８】請求項４に係る光源装置は、パターンまた
は／および電気配線パターンを、セラミック基板上や液
晶ポリマー樹脂基板上やガラス布エポキシ樹脂基板上、
またはリードフレームで形成するので、場所や材質にと
らわれず、何処でも接着固定して白色等の発光を得るこ
とができる。According to a fourth aspect of the present invention, in the light source device, the pattern and / or the electric wiring pattern is formed on a ceramic substrate, a liquid crystal polymer resin substrate, a glass cloth epoxy resin substrate,
Alternatively, since it is formed by a lead frame, it can be adhered and fixed anywhere to obtain light emission such as white light regardless of a place or a material.

【００８９】請求項５に係る光源装置は、半導体発光素
子が透明性を有し、半導体発光素子を載置する反射性を
有したパターン上または／および電気配線パターン上に
波長変換材料を混入した透明樹脂によって形成された印
刷パターン上に半導体発光素子を透明接着剤で固定する
ので、均一化、量産化等の品質、生産性の向上に優れた
光源装置を作製することができる。In the light source device according to the fifth aspect, the semiconductor light emitting element has transparency, and a wavelength conversion material is mixed on a reflective pattern or / and an electric wiring pattern on which the semiconductor light emitting element is mounted. Since the semiconductor light emitting element is fixed on the print pattern formed of the transparent resin with the transparent adhesive, it is possible to manufacture a light source device excellent in quality and productivity such as uniformity and mass production.

【００９０】請求項６に係る光源装置は、半導体発光素
子が、透明性の有する基板上に活性層を配するとともに
活性層上に透明電極を設けたので、波長変換材料を含有
する透明樹脂に向かって光を出射し、これに伴って戻っ
てくる波長変換された光を透過させ、この波長変換され
た光と半導体発光素子自身の発光とにより白色光等の発
光を得ることができる。According to a sixth aspect of the present invention, in the light source device, the semiconductor light emitting element has the active layer disposed on the transparent substrate and the transparent electrode provided on the active layer. The light is emitted toward the light source, and the wavelength-converted light that returns with the light is transmitted. The light having the wavelength converted and the light emitted from the semiconductor light emitting element itself can emit light such as white light.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明に係る光源装置の第１実施の形態を示す
全体図FIG. 1 is an overall view showing a first embodiment of a light source device according to the present invention.

【図２】本発明に係る光源装置の第２実施の形態を示す
全体図FIG. 2 is an overall view showing a second embodiment of the light source device according to the present invention.

【図３】（ａ）〜（ｃ）本発明に係る光源装置の要部の
他の構成例を示す断面図FIGS. 3A to 3C are cross-sectional views illustrating another configuration example of a main part of the light source device according to the present invention.

【符号の説明】[Explanation of symbols]

１（１Ａ，１Ｂ）…光源装置、２（２ａ，２ｂ）…パタ
ーン、３…透明樹脂、４…半導体発光素子、５…ボンデ
ィングワイヤ、６…リード端子、７…モールドケース、
７ａ…凹状部、１１…基板、１１ａ…凹状部、１６…端
子電極、１７…出光モールド部。1 (1A, 1B): Light source device, 2 (2a, 2b): Pattern, 3: Transparent resin, 4: Semiconductor light emitting element, 5: Bonding wire, 6: Lead terminal, 7: Mold case,
7a: concave portion, 11: substrate, 11a: concave portion, 16: terminal electrode, 17: light emitting mold portion.

【手続補正書】[Procedure amendment]

【提出日】平成１３年２月２６日（２００１．２．２
６）[Submission Date] February 26, 2001 (2001.2.2)
6)

【手続補正１】[Procedure amendment 1]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】請求項１[Correction target item name] Claim 1

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【手続補正２】[Procedure amendment 2]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００１６[Correction target item name] 0016

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００１６】[0016]

【課題を解決するための手段】本発明の請求項１に係る
光源装置は、半導体発光素子が透明性を有し、半導体発
光素子を載置する反射性を有した基板またはリードフレ
ーム上、または基板またはリードフレームのパターン上
または／および電気配線パターン上に波長変換材料を混
入した透明樹脂によって半導体発光素子を接着固定し、
半導体発光素子下方に放射した光を波長変換材料により
色変換して再度上方に反射した反射光と、半導体発光素
子上方に放射した半導体発光素子自身の放射光とが混ざ
り合って半導体発光素子上方に放射することを特徴とす
る。According to a first aspect of the present invention, there is provided a light source device, wherein the semiconductor light emitting element has transparency, and is provided on a reflective substrate or lead frame on which the semiconductor light emitting element is mounted, or A semiconductor light emitting element is adhered and fixed with a transparent resin mixed with a wavelength conversion material on a pattern of a substrate or a lead frame or / and on an electric wiring pattern,
The reflected light, which is color-converted by the wavelength conversion material from the light radiated below the semiconductor light-emitting element and reflected upward again, and the radiated light of the semiconductor light-emitting element itself radiated above the semiconductor light-emitting element are mixed to form a light above the semiconductor light-emitting element It is characterized by emitting.

【手続補正３】[Procedure amendment 3]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００１７[Correction target item name] 0017

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００１７】請求項１に係る光源装置は、半導体発光素
子が透明性を有し、半導体発光素子を載置する反射性を
有した基板またはリードフレーム上、または基板または
リードフレームのパターン上または／および電気配線パ
ターン上に波長変換材料を混入した透明樹脂によって半
導体発光素子を接着固定し、半導体発光素子下方に放射
した光を波長変換材料により色変換して再度上方に反射
した反射光と、半導体発光素子上方に放射した半導体発
光素子自身の放射光とが混ざり合って半導体発光素子上
方に放射するので、波長変換材料を分散せずに一様に分
布させることで、放射光と反射光とが完全に混ざり合っ
て均一な光を上方に放射することができる。In the light source device according to the first aspect, the semiconductor light emitting element has transparency, and is on a reflective substrate or lead frame on which the semiconductor light emitting element is mounted, or on a pattern of the substrate or the lead frame. And a semiconductor light emitting element is adhered and fixed to the electric wiring pattern with a transparent resin mixed with a wavelength conversion material, and the reflected light reflected upward by the color conversion of light radiated below the semiconductor light emitting element and reflected again by the wavelength conversion material, Since the emitted light of the semiconductor light emitting element itself emitted above the light emitting element is mixed and emitted above the semiconductor light emitting element, the emitted light and the reflected light are dispersed by dispersing the wavelength conversion material uniformly without dispersing. It can be mixed completely and emit uniform light upward.

【手続補正４】[Procedure amendment 4]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００３２[Correction target item name] 0032

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００３２】図１における透明樹脂３は、モールドケー
ス７の凹状部７ａ内の底面に露出するパターン２（２
ａ）と半導体発光素子４の下面（電極を持たない面）と
の間に介在して設けられ、半導体発光素子４をパターン
２に固着する接着剤としての機能も兼ねている。The transparent resin 3 in FIG. 1 has a pattern 2 (2) exposed on the bottom surface in the concave portion 7a of the mold case 7.
a) and the lower surface of the semiconductor light emitting device 4 (the surface having no electrode), which also functions as an adhesive for fixing the semiconductor light emitting device 4 to the pattern 2.

【手続補正５】[Procedure amendment 5]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００５５[Correction target item name] 0055

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００５５】図２における透明樹脂３は、基板１１上の
パターン２（２ａ）と半導体発光素子４の下面（電極を
持たない面）との間に介在して設けられ、半導体発光素
子４をパターン２に固着する接着剤としての機能も兼ね
ている。The transparent resin 3 in FIG. 2 is provided between the pattern 2 (2 a) on the substrate 11 and the lower surface (the surface having no electrodes) of the semiconductor light emitting device 4. 2 also functions as an adhesive to be fixed.

【手続補正６】[Procedure amendment 6]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００８４[Correction target item name]

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００８４】そして、白色光を得る場合には、半導体発
光素子４として青色光を出射するものを用い、透明樹脂
３として橙色蛍光顔料や橙色蛍光染料の波長変換材料
（または波長変換材料と導電性材料）を混入した樹脂を
用いることにより、半導体発光素子４自身の青色光が半
導体発光素子４の上方に放射され、半導体発光素子４下
方に放射した青色光が透明樹脂３の波長変換材料により
変換された黄色光として再度上方に反射し、上方に放射
した青色光と上方に反射した黄色光とが完全に混ざり合
って均一な白色光を上方に放射する。これにより、クリ
アで輝度の高い白色光を得ることができるとともに波長
変換材料（色変換部材）を分散せずに一様に分布させれ
ばよい。When white light is to be obtained, a semiconductor light emitting element 4 that emits blue light is used, and a transparent resin 3 is a wavelength conversion material of an orange fluorescent pigment or an orange fluorescent dye (or a wavelength conversion material and a conductive material). ), The blue light of the semiconductor light emitting element 4 itself is emitted above the semiconductor light emitting element 4, and the blue light emitted below the semiconductor light emitting element 4 is converted by the wavelength conversion material of the transparent resin 3. The reflected yellow light is reflected upward again, and the blue light emitted upward and the yellow light reflected upward are completely mixed to emit uniform white light upward. Thereby, clear and high-luminance white light can be obtained, and the wavelength conversion material (color conversion member) may be uniformly distributed without being dispersed.

【手続補正７】[Procedure amendment 7]

【補正対象書類名】明細書[Document name to be amended] Statement

【補正対象項目名】００８５[Correction target item name] 0085

【補正方法】変更[Correction method] Change

【補正内容】[Correction contents]

【００８５】以上のように、請求項１に係る光源装置
は、半導体発光素子が透明性を有し、半導体発光素子を
載置する反射性を有した基板またはリードフレーム上、
または基板またはリードフレームのパターン上または／
および電気配線パターン上に波長変換材料を混入した透
明樹脂によって半導体発光素子を接着固定し、半導体発
光素子下方に放射した光を波長変換材料により色変換し
て再度上方に反射した反射光と、半導体発光素子上方に
放射した半導体発光素子自身の放射光とが混ざり合って
半導体発光素子上方に放射するので、波長変換材料を分
散せずに一様に分布させることで、放射光と反射光とが
完全に混ざり合って均一な光を上方に放射し、従来の半
導体発光素子の上に蛍光材を混入した透明樹脂が塗布、
載置あるいは被覆により設けられた構成よりもクリアで
輝度の高い発光を得ることができる。As described above, in the light source device according to the first aspect, the semiconductor light emitting element has transparency, and the semiconductor light emitting element is mounted on a reflective substrate or lead frame on which the semiconductor light emitting element is mounted.
Or on the pattern of the board or lead frame or /
And a semiconductor light emitting element is adhered and fixed to the electric wiring pattern with a transparent resin mixed with a wavelength conversion material, and the reflected light reflected upward by the color conversion of light radiated below the semiconductor light emitting element and reflected again by the wavelength conversion material, Since the emitted light of the semiconductor light emitting element itself emitted above the light emitting element is mixed and emitted above the semiconductor light emitting element, the emitted light and the reflected light are dispersed by dispersing the wavelength conversion material uniformly without dispersing. Completely mixed and emits uniform light upward, transparent resin mixed with fluorescent material is applied on the conventional semiconductor light emitting element,
Clearer and higher-luminance light can be obtained than the structure provided by mounting or covering.

───────────────────────────────────────────────────── フロントページの続き Ｆターム(参考） 2H091 FA43Z FA45Z LA18 5F041 AA04 AA11 CA40 CB36 DA01 DA07 DA09 DA16 DA42 DA57 FF01  ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H091 FA43Z FA45Z LA18 5F041 AA04 AA11 CA40 CB36 DA01 DA07 DA09 DA16 DA42 DA57 FF01

Claims (6)

【特許請求の範囲】[Claims] 【請求項１】 ＩｎＧａＡｌやＩｎＧａＡｌＮやＩｎＧ
ａＮおよびＧａＮ系の半導体発光素子を有する光源装置
において、 前記半導体発光素子が透明性を有し、前記半導体発光素
子を載置する反射性を有したパターン上または／および
電気配線パターン上に波長変換材料を混入した透明樹脂
によって前記半導体発光素子を接着固定したことを特徴
とする光源装置。1. InGaAl, InGaAlN, and InG
A light source device having an aN and a GaN-based semiconductor light emitting device, wherein the semiconductor light emitting device has transparency, and wavelength conversion is performed on a reflective pattern or / and an electrical wiring pattern on which the semiconductor light emitting device is mounted. A light source device, wherein the semiconductor light emitting element is bonded and fixed with a transparent resin mixed with a material. 【請求項２】 前記半導体発光素子は、前記パターンま
たは／および前記電気配線パターンを施し光反射材を混
入させた樹脂で凹状にモールド形成し、前記凹状部内に
波長変換材料を混入した樹脂によって接着固定すること
を特徴とする請求項１記載の光源装置。2. The semiconductor light emitting element is formed by molding the pattern and / or the electric wiring pattern into a concave shape with a resin mixed with a light reflecting material, and bonded by a resin mixed with a wavelength conversion material in the concave portion. The light source device according to claim 1, wherein the light source device is fixed. 【請求項３】 前記半導体発光素子は、前記波長変換材
料と導電性材料を混入した透明樹脂によって接着固定さ
れることを特徴とする請求項１又は２記載の光源装置。3. The light source device according to claim 1, wherein the semiconductor light emitting element is bonded and fixed by a transparent resin in which the wavelength conversion material and a conductive material are mixed. 【請求項４】 前記パターンまたは／および前記電気配
線パターンは、セラミック基板上や液晶ポリマー樹脂基
板上やガラス布エポキシ樹脂基板上、またはリードフレ
ームで形成することを特徴とする請求項１〜３のいずれ
かに記載の光源装置。4. The method according to claim 1, wherein the pattern and / or the electric wiring pattern is formed on a ceramic substrate, a liquid crystal polymer resin substrate, a glass cloth epoxy resin substrate, or a lead frame. The light source device according to any one of the above. 【請求項５】 ＩｎＧａＡｌやＩｎＧａＡｌＮやＩｎＧ
ａＮおよびＧａＮ系の半導体発光素子を有する光源装置
において、 前記半導体発光素子が透明性を有し、前記半導体発光素
子を載置する反射性を有したパターン上または／および
電気配線パターン上に波長変換材料を混入した透明樹脂
によって形成された印刷パターン上に前記半導体発光素
子を透明接着剤で固定することを特徴とする光源装置。5. InGaAl, InGaAlN or InG
A light source device having an aN and a GaN-based semiconductor light emitting device, wherein the semiconductor light emitting device has transparency, and wavelength conversion is performed on a reflective pattern or / and an electrical wiring pattern on which the semiconductor light emitting device is mounted. A light source device, wherein the semiconductor light emitting element is fixed with a transparent adhesive on a print pattern formed of a transparent resin mixed with a material. 【請求項６】 前記半導体発光素子は、透明性の有する
基板上に活性層を配するとともに当該活性層上に透明電
極を設けたことを特徴とする請求項１または５記載の光
源装置。6. The light source device according to claim 1, wherein the semiconductor light-emitting element has an active layer disposed on a transparent substrate and a transparent electrode provided on the active layer.
JP2000032116A 2000-02-09 2000-02-09 Light source device Pending JP2001223388A (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2000032116A JP2001223388A (en) 2000-02-09 2000-02-09 Light source device
AU32261/01A AU3226101A (en) 2000-02-09 2001-02-09 Light source
US09/937,847 US6680568B2 (en) 2000-02-09 2001-02-09 Light source
CNB018008577A CN1225801C (en) 2000-02-09 2001-02-09 Light source
KR1020017012899A KR100748815B1 (en) 2000-02-09 2001-02-09 Light source
TW090102958A TW530424B (en) 2000-02-09 2001-02-09 Light source device
PCT/JP2001/000930 WO2001059851A1 (en) 2000-02-09 2001-02-09 Light source
EP01904371A EP1187228A4 (en) 2000-02-09 2001-02-09 Light source
HK02102855.8A HK1041367A1 (en) 2000-02-09 2002-04-16 Light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000032116A JP2001223388A (en) 2000-02-09 2000-02-09 Light source device

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Publication Number Publication Date
JP2001223388A true JP2001223388A (en) 2001-08-17

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ID=18556770

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Country Link
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Publication number Priority date Publication date Assignee Title
US6835958B2 (en) 2002-02-06 2004-12-28 Toyoda Gosei Co., Ltd. Light-emitting device
JP2006287267A (en) * 2006-07-25 2006-10-19 Nippon Leiz Co Ltd Method for manufacturing light source device
JP2006310887A (en) * 2006-07-25 2006-11-09 Nippon Leiz Co Ltd Method of manufacturing light source device
JP2007123927A (en) * 2006-12-18 2007-05-17 Mitsubishi Cable Ind Ltd Light emitting device and illuminator using it
JP2007514320A (en) * 2003-12-09 2007-05-31 ゲルコアー リミテッド ライアビリティ カンパニー Surface mount light emitting chip package
JP2011134761A (en) * 2009-12-22 2011-07-07 Toshiba Corp Light emitting device
JP2011134762A (en) * 2009-12-22 2011-07-07 Toshiba Corp Light emitting device
JP2014140072A (en) * 2014-04-16 2014-07-31 Rohm Co Ltd Light-emitting element module
US9312462B2 (en) 2010-04-30 2016-04-12 Rohm Co., Ltd. LED module
US9666772B2 (en) * 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics

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JPS60261181A (en) * 1984-06-07 1985-12-24 Toshiba Corp Semiconductor device
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835958B2 (en) 2002-02-06 2004-12-28 Toyoda Gosei Co., Ltd. Light-emitting device
US9666772B2 (en) * 2003-04-30 2017-05-30 Cree, Inc. High powered light emitter packages with compact optics
JP2007514320A (en) * 2003-12-09 2007-05-31 ゲルコアー リミテッド ライアビリティ カンパニー Surface mount light emitting chip package
JP2006287267A (en) * 2006-07-25 2006-10-19 Nippon Leiz Co Ltd Method for manufacturing light source device
JP2006310887A (en) * 2006-07-25 2006-11-09 Nippon Leiz Co Ltd Method of manufacturing light source device
JP2007123927A (en) * 2006-12-18 2007-05-17 Mitsubishi Cable Ind Ltd Light emitting device and illuminator using it
JP2011134761A (en) * 2009-12-22 2011-07-07 Toshiba Corp Light emitting device
JP2011134762A (en) * 2009-12-22 2011-07-07 Toshiba Corp Light emitting device
US9312462B2 (en) 2010-04-30 2016-04-12 Rohm Co., Ltd. LED module
JP2014140072A (en) * 2014-04-16 2014-07-31 Rohm Co Ltd Light-emitting element module

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