JP3400958B2 - Multicolor light emitting diode - Google Patents
Multicolor light emitting diodeInfo
- Publication number
- JP3400958B2 JP3400958B2 JP19344199A JP19344199A JP3400958B2 JP 3400958 B2 JP3400958 B2 JP 3400958B2 JP 19344199 A JP19344199 A JP 19344199A JP 19344199 A JP19344199 A JP 19344199A JP 3400958 B2 JP3400958 B2 JP 3400958B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light emitting
- fluorescent material
- diode element
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000463 material Substances 0.000 claims description 57
- 229920005989 resin Polymers 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 239000010410 layer Substances 0.000 claims description 29
- 239000012790 adhesive layer Substances 0.000 claims description 23
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 11
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 239000008393 encapsulating agent Substances 0.000 description 9
- 239000003086 colorant Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- -1 gallium nitride compound Chemical class 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、台座上に複数の発
光ダイオード素子を搭載し、発光ダイオード素子を単独
で若しくは複数を同時に発光させてなる多色発光ダイオ
ードに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multicolor light emitting diode in which a plurality of light emitting diode elements are mounted on a pedestal, and the light emitting diode elements alone or simultaneously emit light.
【０００２】[0002]
【従来の技術】従来の多色発光ダイオードとしては、赤
色、青色、緑色の各発光ダイオードの内、２色又は３色
を組合せたハイブリッド型のものが知られている。図９
に示したものは表面実装型の２色発光ダイオード１であ
り、台座となるガラスエポキシ基板２（以下ガラエポ基
板という）上に種類の異なる２つの発光ダイオード素子
３，４が搭載され、その上方を樹脂封止体５によって保
護されたものである。ガラエポ基板２の上面には上記２
つの発光ダイオード素子３，４を載置固定するためのカ
ソード電極６ａ，６ｂと、各発光ダイオード素子３，４
をボンディングワイヤ７によって接続するアノード電極
８ａ，８ｂが設けられている。2. Description of the Related Art As a conventional multicolor light emitting diode, a hybrid type of a combination of two or three colors among red, blue and green light emitting diodes is known. Figure 9
2 is a surface-mounting type two-color light emitting diode 1, in which two different types of light emitting diode elements 3 and 4 are mounted on a glass epoxy substrate 2 (hereinafter referred to as a glass epoxy substrate) serving as a pedestal, and the upper portion thereof is It is protected by the resin sealing body 5. On the upper surface of the glass epoxy substrate 2, the above 2
Cathode electrodes 6a, 6b for mounting and fixing one light emitting diode element 3, 4 and each light emitting diode element 3, 4
There are provided anode electrodes 8a and 8b for connecting to each other by a bonding wire 7.
【０００３】上記の２色発光ダイオード１において、２
つの発光ダイオード素子３，４を青色と赤色で構成した
場合には、青色又は赤色を片方ずつ単色発光させること
ができる他、両者を同時に発光させることで様々な混色
発光が得られ、発光ダイオード素子３，４の電流値を制
御することで発光色度を調整することができる。In the above two-color light emitting diode 1, two
When the two light emitting diode elements 3 and 4 are composed of blue and red, respectively, blue or red can be made to emit a single color, or both can be made to emit light at the same time to obtain various mixed color light emission. The emission chromaticity can be adjusted by controlling the current values of 3 and 4.
【０００４】ところで、多色発光ダイオードにおいて白
色発光を得ようとする場合には、例えば上記図９で示し
た発光ダイオード素子３，４の内、一方を窒化ガリウム
系化合物半導体からなる青色発光ダイオード素子で構成
し、樹脂封止体５の中にイットリウム化合物等の蛍光材
（黒点で表示）を分散させることで白色発光を得ること
ができる。即ち、青色の発光ダイオード素子３を発光さ
せると、四方八方に放射される青色発光が樹脂封止体５
に分散されている蛍光材を励起し、波長変換することで
白色発光が得られるものである。In order to obtain white light emission from a multicolor light emitting diode, for example, one of the light emitting diode elements 3 and 4 shown in FIG. 9 is a blue light emitting diode element made of a gallium nitride compound semiconductor. And a fluorescent material (indicated by a black dot) such as an yttrium compound is dispersed in the resin encapsulation body 5, whereby white light emission can be obtained. That is, when the blue light emitting diode element 3 is caused to emit light, blue light emitted in all directions is emitted from the resin sealing body 5.
The white light is obtained by exciting the fluorescent material dispersed in and converting the wavelength.
【０００５】また、図１０に示したようなフルカラー発
光ダイオード１０によっても白色発光を得ることができ
る。これは台座１１の上面に赤色、青色、緑色を発光す
る３種類の発光ダイオード素子１２，１３，１４を載置
すると共に、この発光ダイオード素子１２，１３，１４
と各電極端子１５，１６，１７とを接続し、これら発光
ダイオード素子１２，１３，１４の上方を砲弾形の樹脂
封止体１８によって保護した構造のものである。このよ
うな構成からなるフルカラー発光ダイオード１０にあっ
ては、赤、青、緑の単色発光を得ることができることは
勿論、組み合わせによってほとんど全ての色度を表示す
ることができ、電流値を微妙に制御することで白色発光
も得ることができる。White light can also be obtained by the full-color light emitting diode 10 as shown in FIG. This is to mount three kinds of light emitting diode elements 12, 13, 14 which emit red, blue, and green on the upper surface of the pedestal 11, and to mount the light emitting diode elements 12, 13, 14
And the respective electrode terminals 15, 16 and 17 are connected, and the upper portions of the light emitting diode elements 12, 13 and 14 are protected by a shell-shaped resin sealing body 18. In the full-color light-emitting diode 10 having such a structure, it is possible to obtain red, blue, and green monochromatic light emission, and it is possible to display almost all chromaticities by combination, and the current value is delicately changed. White light emission can also be obtained by controlling.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、上記前
者の２色発光ダイオード１にあっては、樹脂封止体５の
中に分散された蛍光材によって光の透過率が低下してし
まい、白色発光のみならず他方の発光ダイオード素子４
から発光される赤色の輝度も低下し、くすんだ色になっ
てしまうといった問題があった。また、前者の場合には
発光ダイオード素子３，４の上方を被覆する樹脂封止体
５の全体に蛍光材が分散しているために、青色波長の発
光ダイオード素子３を用いた場合には全て白色に波長変
換してしまうことから、青色自体を発光させることがで
きなかった。However, in the former two-color light emitting diode 1, the fluorescent material dispersed in the resin encapsulant 5 reduces the light transmittance, and thus white light is emitted. Not only the other light emitting diode element 4
There is a problem that the brightness of red light emitted from the device also decreases, resulting in a dull color. In the former case, since the fluorescent material is dispersed throughout the resin encapsulant 5 covering the light emitting diode elements 3 and 4, when the light emitting diode element 3 of the blue wavelength is used, all of them are used. Since the wavelength is converted to white, blue itself cannot be emitted.
【０００７】一方、後者のフルカラー発光ダイオード１
０にあっては、白色発光させるためには３色の発光ダイ
オード素子１２，１３，１４の各電流値を微妙に制御し
なければならず、制御回路が複雑になると共に、高輝度
の白色発光を安定的に発光させるのが難しい。また、白
色発光させるためには３色の発光ダイオード素子１２，
１３，１４を同時に発光させなければならないために、
電流消費量が大きくなってしまうといった問題もあっ
た。On the other hand, the latter full-color light emitting diode 1
In the case of 0, in order to emit white light, it is necessary to finely control each current value of the light emitting diode elements 12, 13, 14 of the three colors, the control circuit becomes complicated, and white light emission of high brightness is achieved. It is difficult to emit a stable light. Further, in order to emit white light, the three-color light emitting diode elements 12,
Since 13 and 14 have to emit light at the same time,
There is also a problem that the current consumption becomes large.
【０００８】そこで、本発明の目的は、白色発光を含む
多色発光ダイオードにおいて、発光輝度を低下させるこ
となく、簡易な手段で白色発光を得ることができ、且つ
電流消費量の少ない多色発光ダイオードを提供すること
にある。Therefore, it is an object of the present invention to provide a multicolor light emitting diode which emits white light and can emit white light by a simple means without lowering the emission brightness and consumes less current. To provide a diode.
【０００９】[0009]
【課題を解決するための手段】上記課題を解決するため
に、本発明の請求項１に係る発光ダイオードは、電極が
形成された台座の上面に複数の発光ダイオード素子を配
置し、発光ダイオード素子と前記電極とを接続すると共
に発光ダイオード素子の上方を樹脂封止体によってパッ
ケージングし、前記発光ダイオード素子を単独で若しく
は複数を同時に発光させてなる多色発光ダイオードにお
いて、前記一つにパッケージングされた複数の発光ダイ
オード素子のうち、少なくとも一つが窒化ガリウム系化
合物半導体によって形成された青色発光ダイオード素子
であり、この青色発光ダイオード素子の裏面側に蛍光材
含有接着層を設けて白色発光を得るようにすると共に、
前記蛍光材含有接着層の周囲を前記台座の上面に設けた
堰によって囲むようにしたことを特徴とする。In order to solve the above-mentioned problems, a light-emitting diode according to claim 1 of the present invention has a plurality of light-emitting diode elements arranged on an upper surface of a pedestal on which electrodes are formed. A multicolor light emitting diode in which the above-mentioned light emitting diode element is packaged with a resin encapsulant, and the light emitting diode element is allowed to emit light alone or in a plurality at the same time. At least one of the plurality of light emitting diode elements is a blue light emitting diode element formed of a gallium nitride-based compound semiconductor, and a fluorescent material is provided on the back surface side of the blue light emitting diode element.
With the inclusion adhesive layer to obtain white light emission,
The periphery of the fluorescent material-containing adhesive layer was provided on the upper surface of the pedestal
It is characterized by being surrounded by a weir .
【００１０】[0010]
【００１１】[0011]
【００１２】[0012]
【００１３】また、本発明の請求項２に係る多色発光ダ
イオードは、前記堰が前記台座の上面に設けた板状電極
に形成され、この板状電極に開設された蛍光材含有接着
層充填用の孔の内周縁であることを特徴とする。A multicolor light emitting device according to claim 2 of the present invention.
The ion is characterized in that the weir is formed on a plate-shaped electrode provided on the upper surface of the pedestal and is an inner peripheral edge of a hole for filling a fluorescent material-containing adhesive layer formed in the plate-shaped electrode.
【００１４】また、本発明の請求項３に係る多色発光ダ
イオードは、前記蛍光材含有接着層が蛍光材含有樹脂層
と接着剤とに分離して形成され、台座の上面には蛍光材
含有樹脂層と接着剤層とが層状に形成されることを特徴
とする。A multicolor light emitting device according to claim 3 of the present invention.
In the ion, the fluorescent material-containing adhesive layer is a fluorescent material-containing resin layer.
It is characterized in that the fluorescent material-containing resin layer and the adhesive layer are formed in layers on the upper surface of the pedestal.
【００１５】また、本発明の請求項４に係る多色発光ダ
イオードは、前記蛍光材含有樹脂層が、台座の上面に蛍
光材含有塗料を印刷塗布するか又は蛍光材含有シートを
貼付することによって形成されることを特徴とする。A multicolor light emitting device according to a fourth aspect of the present invention.
The iod is characterized in that the fluorescent material-containing resin layer is formed by print-coating a fluorescent material-containing paint on the upper surface of the pedestal or attaching a fluorescent material-containing sheet.
【００１６】[0016]
【発明の実施の形態】以下、添付図面に基づいて本発明
に係る多色発光ダイオードの実施の形態を詳細に説明す
る。図１及び図２は、表面実装型の多色発光ダイオード
に適用した場合の実施例を示したものである。この実施
例に係る多色発光ダイオード２１は、台座となる矩形状
のガラスエポキシ基板２２の上面にカソード電極２３
ａ，２３ｂとアノード電極２４ａ，２４ｂがパターン形
成され、各スルーホール２５ａ，２５ｂ及び２６ａ，２
６ｂによって裏側に回り込んだ下面電極がマザーボード
２７上のプリント配線２８，２９に半田３０で固定され
ることによって表面実装を実現するものである。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a multicolor light emitting diode according to the present invention will be described below in detail with reference to the accompanying drawings. 1 and 2 show an embodiment when applied to a surface mounting type multicolor light emitting diode. In the multicolor light emitting diode 21 according to this embodiment, the cathode electrode 23 is formed on the upper surface of a rectangular glass epoxy substrate 22 that serves as a pedestal.
a, 23b and anode electrodes 24a, 24b are patterned to form through holes 25a, 25b and 26a, 2
The lower surface electrode that wraps around on the back side by 6b is fixed to the printed wirings 28 and 29 on the mother board 27 with the solder 30 to realize surface mounting.
【００１７】前記ガラエポ基板２２の上面に形成された
一対のカソード電極２３ａ，２３ｂ上には第１の発光ダ
イオード素子３１と第２の発光ダイオード素子３２がそ
れぞれ搭載されている。第１の発光ダイオード素子３１
は窒化ガリウム系化合物半導体からなる青色発光素子で
あり、図３に示したように、サファイヤ基板３３の上面
にｎ型半導体層３４とｐ型半導体層３５を成長させた構
造である。ｎ型半導体層３４及びｐ型半導体層３５は電
極３６，３７を備えており、前記カソード電極２３ａ及
びアノード電極２４ａにボンディングワイヤ３８，３９
によって接続されている。A first light emitting diode element 31 and a second light emitting diode element 32 are mounted on the pair of cathode electrodes 23a and 23b formed on the upper surface of the glass epoxy substrate 22, respectively. First light emitting diode element 31
Is a blue light emitting element made of a gallium nitride-based compound semiconductor, and has a structure in which an n-type semiconductor layer 34 and a p-type semiconductor layer 35 are grown on the upper surface of a sapphire substrate 33, as shown in FIG. The n-type semiconductor layer 34 and the p-type semiconductor layer 35 are provided with electrodes 36 and 37, and bonding wires 38 and 39 are attached to the cathode electrode 23a and the anode electrode 24a.
Connected by.
【００１８】また、第１の発光ダイオード素子３１は、
その裏面側に設けた蛍光材含有接着層４０を介してカソ
ード電極２３ａの上面に接着されている。この蛍光材含
有接着層４０は、図３に示したように、絶縁性の接着剤
４１をベースとしてその中に適当量の蛍光材４２を均一
に分散させたものである。これをカソード電極２３ａの
上面に所定の厚さになるように塗布し、その上に発光ダ
イオード素子３１を載せ置き、接着剤４１を加熱固化す
ることで、第１の発光ダイオード素子３１の裏面がカソ
ード電極２３ａの上面に固定される。Further, the first light emitting diode element 31 is
It is adhered to the upper surface of the cathode electrode 23a via the fluorescent material-containing adhesive layer 40 provided on the back surface side. As shown in FIG. 3, the fluorescent material-containing adhesive layer 40 has an insulating adhesive agent 41 as a base and an appropriate amount of fluorescent material 42 uniformly dispersed therein. This is applied to the upper surface of the cathode electrode 23a so as to have a predetermined thickness, the light emitting diode element 31 is placed thereon, and the adhesive 41 is heated and solidified, so that the back surface of the first light emitting diode element 31 is removed. It is fixed on the upper surface of the cathode electrode 23a.
【００１９】上記蛍光材４２は、第１の発光ダイオード
素子３１からの発光エネルギによって励起され、短波長
可視光を長波長可視光に変換するものであり、例えばイ
ットリウム化合物等の蛍光物質が用いられる。そのた
め、第１の発光ダイオード素子３１からの青色発光は、
波長変換によって黄色に変換され四方八方に発光し、青
色発光との混色によって白色に見える。The fluorescent material 42 is excited by the emission energy from the first light emitting diode element 31 and converts short-wavelength visible light into long-wavelength visible light. For example, a fluorescent material such as an yttrium compound is used. . Therefore, the blue light emitted from the first light emitting diode element 31 is
It is converted to yellow by wavelength conversion and emits light in all directions and appears white due to color mixing with blue emission.
【００２０】一方、第２の発光ダイオード素子３２は、
リン化ガリウムアルミニウムインジウム系化合物半導体
（ＧａＡｌＩｎＰ）を材料とした赤色発光ダイオード素
子であり、カソード電極２３ｂの上に導電性接着剤４３
を介して固定され、その上面電極とアノード電極２４ｂ
とがボンディングワイヤ４４によって接続されている。On the other hand, the second light emitting diode element 32 is
A red light emitting diode element made of a gallium aluminum indium phosphide-based compound semiconductor (GaAlInP), which is a conductive adhesive 43 on the cathode electrode 23b.
Fixed via the upper electrode and the anode electrode 24b
And are connected by a bonding wire 44.
【００２１】図１及び図２に示したように、ガラエポ基
板２２の上面に並んで配置された発光ダイオード素子３
１，３２の上方は、透明の樹脂封止体４５によって保護
されている。この樹脂封止体４５は、エポキシ樹脂を主
成分としたものであり、カソード電極２３ａ，２３ｂの
スルーホール部２５ａ，２５ｂおよびアノード電極２４
ａ，２４ｂのスルーホール部２６ａ，２６ｂを残してガ
ラエポ基板２２の上面に直方体形状に形成されている。As shown in FIGS. 1 and 2, the light emitting diode elements 3 arranged side by side on the upper surface of the glass epoxy substrate 22.
The upper portions of the parts 1 and 32 are protected by a transparent resin sealing body 45. The resin encapsulant 45 is mainly composed of epoxy resin, and has through holes 25a and 25b of the cathode electrodes 23a and 23b and the anode electrode 24.
It is formed in a rectangular parallelepiped shape on the upper surface of the glass epoxy substrate 22 except the through holes 26a and 26b of a and 24b.
【００２２】従って、上記実施例における多色発光ダイ
オード２１にあっては、第１の発光ダイオード素子３１
に電流が流れると、ｎ型半導体層３４とｐ型半導体層３
５との境界面で青色発光し、この青色発光が上方、側方
及び下方へ青色光４６として発光する。特に下方側へ発
光した青色光４６は蛍光材含有接着層４０の中に分散さ
れている蛍光材４２に当たって励起され、波長変換を受
けて四方八方に黄色光４７として発光する。そして、こ
の黄色光４７が前記第１の発光ダイオード素子３１の上
方及び側方へ発光した青色光４６と混色し、多色発光ダ
イオード２１を見た時に白色発光として認識される。第
１の発光ダイオード素子３１の上方は、直方体形状の樹
脂封止体４５によって保護され、前述の青色光４６及び
波長変換された黄色光４７がこの中を直進するが、この
樹脂封止体４５がエポキシ系の透明樹脂を主成分として
おり、従来と異なって蛍光材を含まないので光の透過率
が良く、結果的に白色発光の輝度アップが図られること
になる。また、この実施例では第１の発光ダイオード素
子３１に電流を流すだけで白色発光が得られるので、従
来のように複数の発光ダイオード素子の混色によって白
色発光を得る場合に比べて電流消費量が格段に少なくて
済む。Therefore, in the multicolor light emitting diode 21 in the above embodiment, the first light emitting diode element 31 is used.
When a current flows through the n-type semiconductor layer 34 and the p-type semiconductor layer 3
Blue light is emitted at the boundary surface with 5, and this blue light is emitted as blue light 46 in the upward, lateral, and downward directions. In particular, the blue light 46 emitted to the lower side hits the fluorescent material 42 dispersed in the fluorescent material-containing adhesive layer 40, is excited, undergoes wavelength conversion, and emits as yellow light 47 in all directions. Then, the yellow light 47 is mixed with the blue light 46 emitted above and to the side of the first light emitting diode element 31, and is recognized as white light emission when the multicolor light emitting diode 21 is viewed. The upper part of the first light emitting diode element 31 is protected by a rectangular parallelepiped resin encapsulant 45, and the blue light 46 and the wavelength-converted yellow light 47 described above travel straight through the resin encapsulant 45. Contains an epoxy-based transparent resin as a main component and does not contain a fluorescent material unlike the prior art, so that the light transmittance is good, and as a result, the brightness of white light emission is increased. Further, in this embodiment, white light emission can be obtained only by passing a current through the first light emitting diode element 31, so that the current consumption amount is smaller than that in the conventional case where white light emission is obtained by mixing a plurality of light emitting diode elements. Remarkably less.
【００２３】一方、赤色発光を得る場合には、第２の発
光ダイオード素子３２に電流を流すことで得られるが、
樹脂封止体４５が透明であることから光の透過率が低下
することなく高輝度の赤色発光が得られる。On the other hand, in order to obtain red light emission, it can be obtained by passing a current through the second light emitting diode element 32.
Since the resin encapsulant 45 is transparent, high-luminance red light emission can be obtained without reducing the light transmittance.
【００２４】図４は、本発明の第２実施例を示したもの
であり、第２の発光ダイオード素子３２を前記実施例に
おける赤色発光から青色発光のものに代え、これをカソ
ード電極２３ｂの上に載置したものである。この青色の
発光ダイオード素子３２は、第１の発光ダイオード素子
３１と同じ窒化ガリウム系化合物半導体を材料としたも
のである。従って、カソード電極２３ｂの上面には絶縁
性の接着剤４１を介して固定され、カソード電極２３ｂ
及びアノード電極２４ｂとはそれぞれボンディングワイ
ヤ３８，３９で導通が図られている。なお、その他の構
成は前記第１実施例と同様であるので、詳細な説明は省
略する。FIG. 4 shows a second embodiment of the present invention, in which the second light emitting diode element 32 is replaced with a red light emitting diode in the above embodiment, which is placed on the cathode electrode 23b. It was placed in. The blue light emitting diode element 32 is made of the same gallium nitride-based compound semiconductor as that of the first light emitting diode element 31. Therefore, it is fixed to the upper surface of the cathode electrode 23b through the insulating adhesive 41, and the cathode electrode 23b
And the anode electrode 24b are electrically connected by bonding wires 38 and 39, respectively. Since the other construction is the same as that of the first embodiment, detailed description will be omitted.
【００２５】この実施例にあっては、第１の発光ダイオ
ード素子３１は上記実施例と同様、白色発光が得られる
一方、第２の発光ダイオード素子３２に電流を供給した
ときには青色発光が得られる。このように、全く同じ形
態の発光ダイオード素子を搭載しながら、青色と白色の
２色発光を容易に得ることができる。In this embodiment, white light emission is obtained from the first light emitting diode element 31 as in the above embodiment, while blue light emission is obtained when a current is supplied to the second light emitting diode element 32. . In this way, it is possible to easily obtain two-color light emission of blue and white while mounting the light emitting diode elements of exactly the same form.
【００２６】図５は、本発明の第３実施例を示したもの
である。この実施例に係る多色発光ダイオードはフルカ
ラーのものであるが、従来とは異なって４つの発光ダイ
オード素子によってあらゆる色を表現することが可能で
ある。即ち、白色発光を第１の発光ダイオード素子３１
によって発光させ、白色以外のあらゆる色を第２、第
３、第４の発光ダイオード素子３２，５０，５１の組み
合わせによって表示する構成である。横長のガラエポ基
板２２上にカソード電極２３ａ〜２３ｄとアノード電極
２４ａ〜２４ｄを４列に並べて形成し、カソード電極２
３ａ〜２３ｄ上に第１〜第４の発光ダイオード素子３
１，３２，５０，５１を順に搭載したものである。この
実施例では第１〜第４の発光ダイオード素子３１，３
２，５０，５１が白色、緑色、青色、赤色の発光ダイオ
ード素子であり、第１〜第３の発光ダイオード３１，３
２，５０は、いずれも窒化ガリウム系化合物半導体を材
料とし、第４の発光ダイオード素子５１はリン化ガリウ
ムアルミニウムインジウム系化合物半導体を材料として
いる。FIG. 5 shows a third embodiment of the present invention. Although the multicolor light emitting diode according to this embodiment is a full-color light emitting diode, it is possible to express all colors with four light emitting diode elements unlike the conventional one. That is, white light is emitted from the first light emitting diode element 31.
It is made to emit light and display all colors other than white by a combination of the second, third and fourth light emitting diode elements 32, 50 and 51. The cathode electrodes 23a to 23d and the anode electrodes 24a to 24d are formed in four rows on the horizontally long glass epoxy substrate 22.
First to fourth light emitting diode elements 3 on 3a to 23d
1, 32, 50, 51 are mounted in order. In this embodiment, the first to fourth light emitting diode elements 31, 3
2, 50 and 51 are white, green, blue and red light emitting diode elements, and the first to third light emitting diodes 31, 3
2, 50 are both made of a gallium nitride-based compound semiconductor, and the fourth light-emitting diode element 51 is made of a gallium aluminum indium phosphide-based compound semiconductor.
【００２７】前記第１の発光ダイオード３１は、蛍光材
含有接着層４０によってカソード電極２３ａの上面に固
着され、第２及び第３の発光ダイオード素子３２，５０
は絶縁性の接着剤４１によってカソード電極２３ｂ，２
３ｃの上面に固着されている。また、第４の発光ダイオ
ード素子５１は導電性接着剤４３によってカソード電極
２３ｄの上面に固着されている。なお、第１〜第３の発
光ダイオード素子３１，３２，５０は、各カソード電極
２３ａ，２３ｂ，２３ｃとボンディングワイヤ３８によ
って接続され、また、アノード電極２４ａ，２４ｂ，２
４ｃ，２４ｄとは第４の発光ダイオード素子５１も含め
てボンディングワイヤ３９，４４によって接続されてい
る。第１〜第４の発光ダイオード素子３１，３２，５
０，５１の上方は、一体に成形した樹脂封止体４５によ
って保護されている。The first light emitting diode 31 is fixed to the upper surface of the cathode electrode 23a by a fluorescent material-containing adhesive layer 40, and the second and third light emitting diode elements 32 and 50 are provided.
Is a cathode electrode 23b, 2 with an insulating adhesive 41.
It is fixed to the upper surface of 3c. The fourth light emitting diode element 51 is fixed to the upper surface of the cathode electrode 23d with a conductive adhesive 43. The first to third light emitting diode elements 31, 32, 50 are connected to the cathode electrodes 23a, 23b, 23c by the bonding wires 38, and the anode electrodes 24a, 24b, 2 are connected.
4c and 24d, including the fourth light emitting diode element 51, are connected by bonding wires 39 and 44. First to fourth light emitting diode elements 31, 32, 5
The upper part of 0 and 51 is protected by a resin molding 45 that is integrally molded.
【００２８】従って、この実施例ではそれぞれの発光ダ
イオード素子３１，３２，５０，５１を単色発光できる
ことは勿論、緑色、青色、赤色を発光する第２〜第４の
発光ダイオード素子３２，５０，５１の電流値を制御す
ることであらゆる色を発光させることができると共に、
白色発光は第１の発光ダイオード素子３１を単色発光さ
せることで得られ、従来のフルカラー発光ダイオードの
ように、微妙な電流制御を行う必要がない。Therefore, in this embodiment, each of the light emitting diode elements 31, 32, 50 and 51 can emit light of a single color, and of course, the second to fourth light emitting diode elements 32, 50 and 51 which emit green, blue and red light. All colors can be emitted by controlling the current value of
White light emission is obtained by causing the first light emitting diode element 31 to emit a single color, and it is not necessary to perform delicate current control as in the conventional full color light emitting diode.
【００２９】図６及び図７は、上記実施例１乃至３にお
いて、第１の発光ダイオード素子３１の裏面側に設けら
れた蛍光材含有接着層４０の厚みを確保する場合の実施
例である。この実施例では上記カソード電極２３ａに第
１の発光ダイオード素子３１の平面形状より少し小さめ
の角孔５２を開設し、この角孔５２内に上記蛍光材含有
接着層４０を充填すると共に、その上に第１の発光ダイ
オード素子３１を載置して固定したものである。この実
施例では、蛍光材含有接着層４０を角孔５２内に充填し
た時に、角孔５２の内周縁５３が堰の役目をして蛍光材
含有接着層４０の流れ出しを防ぐので、所定の厚みを確
保することができると共に、第１の発光ダイオード素子
３１の下面全体に亘って均一な厚みを確保することがで
きる。FIGS. 6 and 7 are examples in which the thickness of the fluorescent material-containing adhesive layer 40 provided on the back surface side of the first light emitting diode element 31 is secured in the first to third embodiments. In this embodiment, a square hole 52, which is slightly smaller than the planar shape of the first light emitting diode element 31, is formed in the cathode electrode 23a, and the fluorescent material-containing adhesive layer 40 is filled in the square hole 52 and the square hole 52 is formed on the square hole 52. The first light emitting diode element 31 is mounted and fixed on the. In this embodiment, when the fluorescent material-containing adhesive layer 40 is filled in the square hole 52, the inner peripheral edge 53 of the square hole 52 functions as a weir to prevent the fluorescent material-containing adhesive layer 40 from flowing out, so that a predetermined thickness is obtained. It is possible to secure a uniform thickness over the entire lower surface of the first light emitting diode element 31.
【００３０】図８は、前記実施例１乃至３において、蛍
光材含有接着層４０の接着剤４１と蛍光材４２とを分離
し、透明樹脂材の中に上述の蛍光材４２を分散させてガ
ラエポ基板２２の上面に印刷塗布し、蛍光材含有樹脂層
５４を形成すると共に、その上に透明の接着剤４１を塗
布して２層構造としたものである。蛍光材含有樹脂層５
４は、重ね刷りなどによって所定の厚みに形成すること
ができる。この実施例にあっては、第１の発光ダイオー
ド素子３１から裏面側に向かう青色発光は、接着剤４１
を通過して蛍光材含有樹脂層５４内に分散された蛍光材
４２に当たって励起され、黄色発光に波長変換されて四
方八方に発光するが、蛍光材含有樹脂層５４の厚みを大
きく確保することができると共に厚みの調整が容易であ
るため、青色発光との混色度合いを調整し易いといった
メリットがある。なお、蛍光材含有樹脂層５４を、蛍光
材含有シートによって形成することもできる。FIG. 8 shows that, in the first to third embodiments, the adhesive 41 and the fluorescent material 42 of the fluorescent material-containing adhesive layer 40 are separated, and the fluorescent material 42 is dispersed in the transparent resin material to make the glass epoxy. The fluorescent material-containing resin layer 54 is formed by printing and coating on the upper surface of the substrate 22, and a transparent adhesive 41 is coated thereon to form a two-layer structure. Fluorescent material-containing resin layer 5
4 can be formed to a predetermined thickness by overprinting or the like. In this embodiment, the blue light emitted from the first light emitting diode element 31 toward the back surface side is the adhesive 41.
The fluorescent material 42 dispersed in the fluorescent material-containing resin layer 54 is excited by the light, is converted into a wavelength of yellow light, and emits light in all directions. However, it is possible to secure a large thickness of the fluorescent material-containing resin layer 54. Since this is possible and the thickness can be easily adjusted, there is an advantage that it is easy to adjust the degree of color mixture with blue light emission. The fluorescent material-containing resin layer 54 may be formed of a fluorescent material-containing sheet.
【００３１】なお、上記いずれの実施例も、図２に示し
たように、マザーボード２７上のプリント配線２８，２
９に直接表面実装されるチップ型の発光ダイオードにつ
いて説明したものであるが、この発明の多色発光ダイオ
ードは、従来例で説明したリードフレーム型のものにも
適用することができる。即ち、複数の発光ダイオード素
子が載置される台座の一部に蛍光材含有接着層を塗布
し、その上に窒化ガリウム系化合物半導体からなる青色
の発光ダイオード素子を固着することで、砲弾形の樹脂
封止体の中に蛍光材を分散させなくても白色発光を含む
高輝度の多色発光を得ることができる。In each of the above embodiments, as shown in FIG. 2, the printed wirings 28, 2 on the motherboard 27 are arranged.
Although the chip type light emitting diode directly mounted on the surface 9 is described, the multicolor light emitting diode of the present invention can also be applied to the lead frame type light emitting device described in the conventional example. That is, a fluorescent material-containing adhesive layer is applied to a part of a pedestal on which a plurality of light emitting diode elements are mounted, and a blue light emitting diode element made of a gallium nitride-based compound semiconductor is fixed on the adhesive layer, thereby forming a bullet-shaped High-luminance multicolor emission including white emission can be obtained without dispersing the fluorescent material in the resin encapsulant.
【００３２】また、上記いずれの実施例も発光ダイオー
ド素子と電極をボンディングワイヤによって接続した場
合について説明したが、この発明はこれに限定されるも
のではなく、例えば半田バンプを用いたフリップチップ
実装などの接続方法も含まれるものである。In each of the above embodiments, the case where the light emitting diode element and the electrode are connected by the bonding wire has been described, but the present invention is not limited to this. For example, flip chip mounting using solder bumps or the like. The connection method of is also included.
【００３３】[0033]
【発明の効果】以上説明したように、本発明に係る多色
発光ダイオードによれば、台座上に搭載した複数の発光
ダイオード素子のうち、少なくとも一つが窒化ガリウム
系化合物半導体によって形成された青色発光ダイオード
素子であり、この青色発光ダイオード素子の裏面側に蛍
光材含有層を設けることで白色発光を得るようにしたの
で、従来のように樹脂封止体の中に波長変換用の蛍光材
を分散させて白色発光を得たり、フルカラー発光ダイオ
ードのように３個の発光ダイオード素子の微妙な電流制
御によって白色発光を得るのとは異なって、発光輝度の
低下を招くことがなく、白色以外の発光も高輝度が保た
れる。また、微妙な電流制御を必要とせずに簡易な手段
で白色発光を得ることができると共に電流消費量も少な
くて済む。更に、本発明によれば、白色発光と青色発光
の組み合わせによる２色発光ダイオードも容易に提供す
ることができる。As described above, according to the multicolor light emitting diode according to the present invention, at least one of the plurality of light emitting diode elements mounted on the pedestal emits blue light. Since it is a diode element and white light emission is obtained by providing a fluorescent material containing layer on the back side of this blue light emitting diode element, the fluorescent material for wavelength conversion is dispersed in the resin encapsulant as in the past. Different from white light emission obtained by controlling the current of three light emitting diode elements such as full-color light emitting diode, white light emission is not caused, and light emission other than white light is not caused. High brightness is maintained. Further, white light emission can be obtained by a simple means without requiring delicate current control, and current consumption can be reduced. Further, according to the present invention, it is possible to easily provide a two-color light emitting diode that is a combination of white light emission and blue light emission.
【００３４】[0034]
【００３５】また、本発明に係る発光ダイオードによれ
ば、堰を設けてその中に蛍光材含有層を配置したり、蛍
光材含有層を印刷やシートによって形成したことで、蛍
光材含有層の厚みを確保できると共に、その厚みを任意
に調整できるといった効果がある。Further, according to the light emitting diode of the present invention, by providing a weir and disposing the fluorescent material-containing layer therein, or by forming the fluorescent material-containing layer by printing or a sheet, the fluorescent material-containing layer can be formed. There is an effect that the thickness can be secured and the thickness can be arbitrarily adjusted.
【００３６】また、本発明に係る発光ダイオードは、表
面実装タイプのチップ型発光ダイオードとして最適であ
り、量産性にも優れた構造である。Further, the light emitting diode according to the present invention is optimal as a surface mount type chip type light emitting diode and has a structure excellent in mass productivity.
【図１】本発明に係る多色発光ダイオードの第１実施例
を示す斜視図である。FIG. 1 is a perspective view showing a first embodiment of a multicolor light emitting diode according to the present invention.
【図２】上記発光ダイオードをマザーボードに実装した
時の上記図１におけるＡ−Ａ線に沿った断面図である。FIG. 2 is a sectional view taken along the line AA in FIG. 1 when the light emitting diode is mounted on a motherboard.
【図３】上記発光ダイオードにおいて、発光ダイオード
素子の裏面側での波長変換の原理を示す図である。FIG. 3 is a diagram showing the principle of wavelength conversion on the back surface side of the light emitting diode element in the light emitting diode.
【図４】本発明に係る多色発光ダイオードの第２実施例
を示す斜視図である。FIG. 4 is a perspective view showing a second embodiment of a multicolor light emitting diode according to the present invention.
【図５】本発明に係る多色発光ダイオードの第３実施例
を示す斜視図である。FIG. 5 is a perspective view showing a third embodiment of a multicolor light emitting diode according to the present invention.
【図６】本発明に係る多色発光ダイオードにおいて、カ
ソード電極の一部に堰を設けた場合の部分斜視図であ
る。FIG. 6 is a partial perspective view of a multicolor light emitting diode according to the present invention in which a weir is provided in a part of a cathode electrode.
【図７】上記堰を設けた場合の多色発光ダイオードの断
面図である。FIG. 7 is a cross-sectional view of a multicolor light emitting diode when the weir is provided.
【図８】本発明に係る多色発光ダイオードにおいて、蛍
光材含有樹脂層と接着剤層とを分離して２層構造とした
場合の断面図である。FIG. 8 is a cross-sectional view of a multicolor light emitting diode according to the present invention in which a fluorescent material-containing resin layer and an adhesive layer are separated to form a two-layer structure.
【図９】従来における表面実装型の多色発光ダイオード
の一例を示す斜視図である。FIG. 9 is a perspective view showing an example of a conventional surface mount multicolor light emitting diode.
【図１０】従来におけるリードフレーム型の多色発光ダ
イオードの一例を示す断面図である。FIG. 10 is a sectional view showing an example of a conventional lead frame type multicolor light emitting diode.
２１ 多色発光ダイオード ２２ ガラスエポキシ基板（台座） ３１ 第１の発光ダイオード素子 ３２ 第２の発光ダイオード素子 ４０ 蛍光材含有接着層（蛍光材含有層） ４１ 接着剤 ４２ 蛍光材 ５０ 第３の発光ダイオード素子 ５１ 第４の発光ダイオード素子 ５３ 角孔の内周縁（堰） ５４ 蛍光材含有樹脂層（蛍光材含有層） 21 Multicolor LED 22 Glass epoxy substrate (base) 31 First light emitting diode element 32 Second light emitting diode element 40 Adhesive layer containing fluorescent material (fluorescent material containing layer) 41 adhesive 42 Fluorescent material 50 Third light emitting diode element 51 Fourth Light-Emitting Diode Element 53 Inner rim of square hole (weir) 54 Fluorescent Material-Containing Resin Layer (Fluorescent Material-Containing Layer)
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 25/04 Ｈ０１Ｌ 25/04 Ｚ 25/18 (56)参考文献 特開 平11−68169（ＪＰ，Ａ) 特開 平10−290029（ＪＰ，Ａ) 特開 平10−242513（ＪＰ，Ａ) 特開 平10−151794（ＪＰ，Ａ) 実開 平４−63661（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 C09K 11/08 C09K 11/62 C09K 11/70 CQF H01L 25/04 H01L 25/18 ＪＩＣＳＴファイル（ＪＯＩＳ)─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H01L 25/04 H01L 25/04 Z 25/18 (56) References JP-A-11-68169 (JP, A) JP-A-10 -290029 (JP, A) JP-A-10-242513 (JP, A) JP-A-10-151794 (JP, A) Actual development 4-63661 (JP, U) (58) Fields investigated (Int.Cl) . 7 , DB name) H01L 33/00 C09K 11/08 C09K 11/62 C09K 11/70 CQF H01L 25/04 H01L 25/18 JISST file (JOIS)
Claims (4)
光ダイオード素子を配置し、発光ダイオード素子と前記
電極とを接続すると共に発光ダイオード素子の上方を樹
脂封止体によってパッケージングし、前記発光ダイオー
ド素子を単独で若しくは複数を同時に発光させてなる多
色発光ダイオードにおいて、 前記一つにパッケージングされた複数の発光ダイオード
素子のうち、少なくとも一つが窒化ガリウム系化合物半
導体によって形成された青色発光ダイオード素子であ
り、この青色発光ダイオード素子の裏面側に蛍光材含有
接着層を設けて白色発光を得るようにすると共に、前記
蛍光材含有接着層の周囲を前記台座の上面に設けた堰に
よって囲むようにしたことを特徴とする多色発光ダイオ
ード。1. A plurality of light emitting diode elements are arranged on an upper surface of a pedestal on which an electrode is formed, the light emitting diode element and the electrode are connected to each other, and the upper part of the light emitting diode element is packaged with a resin sealing body, A multi-color light emitting diode, which comprises a single light emitting diode device or a plurality of light emitting diode devices simultaneously emitting blue light, wherein at least one of the plurality of light emitting diode devices packaged in one is made of a gallium nitride-based compound semiconductor. It is a diode element and contains a fluorescent material on the back side of this blue light emitting diode element.
The adhesive layer is provided with so as to obtain white light emission, the
A weir provided around the fluorescent material-containing adhesive layer on the upper surface of the pedestal
Therefore , a multicolor light emitting diode characterized by being surrounded .
極に形成され、この板状電極に開設された蛍光材含有接
着層充填用の孔の内周縁であることを特徴とする請求項
１記載の多色発光ダイオード。 2. The weir is formed in a plate-shaped electrode provided on the upper surface of the pedestal, and is an inner peripheral edge of a hole for filling a fluorescent material-containing adhesive layer formed in the plate-shaped electrode. Term
1. The multicolor light emitting diode described in 1 .
層と接着剤とに分離して形成され、台座の上面には蛍光
材含有樹脂層と接着剤層とが層状に形成されることを特
徴とする請求項１又は２記載の多色発光ダイオード。 3. The fluorescent material-containing adhesive layer is a fluorescent material-containing resin.
The multicolor light emitting diode according to claim 1 or 2, wherein the layer and the adhesive are formed separately, and the fluorescent material-containing resin layer and the adhesive layer are formed in layers on the upper surface of the pedestal.
蛍光材含有塗料を印刷塗布するか又は蛍光材含有シート
を貼付することによって形成されることを特徴とする請
求項３記載の多色発光ダイオード。 Wherein said fluorescent material-containing resin layer, multi according to claim 3, characterized in that it is formed by sticking the or fluorescent material containing sheet a fluorescent material-containing coating on the upper surface of the base printing coating Color light emitting diode.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19344199A JP3400958B2 (en) | 1999-07-07 | 1999-07-07 | Multicolor light emitting diode |
| CNB008011915A CN1224112C (en) | 1999-06-23 | 2000-06-20 | Light emitting diode |
| EP00937311A EP1107321A4 (en) | 1999-06-23 | 2000-06-20 | Light emitting diode |
| PCT/JP2000/004006 WO2000079605A1 (en) | 1999-06-23 | 2000-06-20 | Light emitting diode |
| KR10-2001-7002306A KR100425566B1 (en) | 1999-06-23 | 2000-06-20 | Light emitting diode |
| US10/817,895 US6914267B2 (en) | 1999-06-23 | 2004-04-06 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19344199A JP3400958B2 (en) | 1999-07-07 | 1999-07-07 | Multicolor light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2001024238A JP2001024238A (en) | 2001-01-26 |
| JP3400958B2 true JP3400958B2 (en) | 2003-04-28 |
Family
ID=16308051
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19344199A Expired - Lifetime JP3400958B2 (en) | 1999-06-23 | 1999-07-07 | Multicolor light emitting diode |
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| Country | Link |
|---|---|
| JP (1) | JP3400958B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001212082A (en) * | 2000-02-07 | 2001-08-07 | Rabo Sufia Kk | Dyschromethesiameter |
| JP2002241586A (en) * | 2001-02-19 | 2002-08-28 | Matsushita Electric Ind Co Ltd | Wavelength conversion paste material, composite light- emitting element, semiconductor light-emitting device, and method for producing the same |
| JP4709405B2 (en) * | 2001-03-15 | 2011-06-22 | シチズン電子株式会社 | Light emitting diode |
| JP2003046131A (en) * | 2001-07-27 | 2003-02-14 | Matsushita Electric Ind Co Ltd | Semiconductor light emitting device with chromaticity correction function |
| JP3972670B2 (en) | 2002-02-06 | 2007-09-05 | 豊田合成株式会社 | Light emitting device |
| KR100499129B1 (en) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | Light emitting laser diode and fabricatin method thereof |
| JP2005005482A (en) * | 2003-06-12 | 2005-01-06 | Citizen Electronics Co Ltd | Led light emitting device and color display device using the same |
| EP1964184A2 (en) * | 2005-12-14 | 2008-09-03 | Koninklijke Philips Electronics N.V. | Solid-state light source and method of producing light of a desired color point |
| KR101241528B1 (en) * | 2006-09-25 | 2013-03-08 | 엘지이노텍 주식회사 | Light Emitting device |
| KR100980969B1 (en) * | 2008-08-14 | 2010-09-07 | 현대자동차주식회사 | Mounting device of jack up instrument |
| TWI651871B (en) | 2013-06-27 | 2019-02-21 | 晶元光電股份有限公司 | Light-emitting component and manufacturing method |
| CN104282817B (en) * | 2013-07-01 | 2019-08-06 | 晶元光电股份有限公司 | Light-emitting diode component and production method |
| CN108028303B (en) * | 2015-09-18 | 2020-01-24 | 西铁城电子株式会社 | Light emitting device |
| JP6694153B2 (en) * | 2015-09-24 | 2020-05-13 | 東芝ライテック株式会社 | Light emitting device and lighting device |
| CN107946441A (en) * | 2016-10-12 | 2018-04-20 | 亿光电子工业股份有限公司 | Light-emitting device and light-emitting diode encapsulation structure |
| JP6973727B2 (en) * | 2017-03-15 | 2021-12-01 | ローム株式会社 | Electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2508409Y2 (en) * | 1990-10-12 | 1996-08-21 | サンケン電気株式会社 | Light emitting display |
| JP2927279B2 (en) * | 1996-07-29 | 1999-07-28 | 日亜化学工業株式会社 | Light emitting diode |
| JP3992770B2 (en) * | 1996-11-22 | 2007-10-17 | 日亜化学工業株式会社 | Light emitting device and method for forming the same |
| JP3741512B2 (en) * | 1997-04-14 | 2006-02-01 | ローム株式会社 | LED chip parts |
| JP2947344B2 (en) * | 1997-08-19 | 1999-09-13 | サンケン電気株式会社 | Light emitting diode device |
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