JP2947343B2 - Light emitting diode device - Google Patents
Light emitting diode deviceInfo
- Publication number
- JP2947343B2 JP2947343B2 JP22278597A JP22278597A JP2947343B2 JP 2947343 B2 JP2947343 B2 JP 2947343B2 JP 22278597 A JP22278597 A JP 22278597A JP 22278597 A JP22278597 A JP 22278597A JP 2947343 B2 JP2947343 B2 JP 2947343B2
- Authority
- JP
- Japan
- Prior art keywords
- emitting diode
- light
- light emitting
- chip
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 55
- 239000004020 conductor Substances 0.000 claims description 31
- 239000011347 resin Substances 0.000 claims description 31
- 229920005989 resin Polymers 0.000 claims description 31
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000007789 sealing Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000126 substance Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオード装
置、特に発光ダイオードチップから照射される光を波長
変換して外部に放出する発光ダイオード装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-emitting diode device, and more particularly to a light-emitting diode device that converts light emitted from a light-emitting diode chip into a wavelength and emits the light to the outside.
【０００２】[0002]
【従来の技術】図３は発光ダイオードチップから照射さ
れる光の波長を蛍光体によって変換する従来の発光ダイ
オード装置の断面図を示す。図３に示すように、発光ダ
イオード装置（１）では、カソード側のリード（３）の
カップ部（３ａ）の底面（３ｂ）に発光ダイオードチッ
プ（２）を固着し、ボンディングワイヤ（５）により発
光ダイオードチップ（２）のカソード電極をカソード側
のリード（３）の上端部（９）に接続すると共に、発光
ダイオードチップ（２）のアノード電極をボンディング
ワイヤ（６）によりアノード側のリード（４）の上端部
（１０）に接続する。カップ部（３ａ）に固着された発
光ダイオードチップ（２）は、カップ部（３ａ）内に充
填された樹脂（７）により被覆され、更に発光ダイオー
ドチップ（２）、カソード側のリード（３）のカップ部
（３ａ）、アノード側のリード（４）の上端部（１
０）、ボンディングワイヤ（５、６）は光透過性の封止
樹脂（８）内に封入される。樹脂（７）は蛍光物質を混
入した光透過性の樹脂である。2. Description of the Related Art FIG. 3 is a cross-sectional view of a conventional light emitting diode device for converting the wavelength of light emitted from a light emitting diode chip by a phosphor. As shown in FIG. 3, in the light emitting diode device (1), the light emitting diode chip (2) is fixed to the bottom surface (3b) of the cup portion (3a) of the lead (3) on the cathode side, and the bonding wire (5) is used. The cathode electrode of the light emitting diode chip (2) is connected to the upper end (9) of the lead (3) on the cathode side, and the anode electrode of the light emitting diode chip (2) is connected to the lead (4) on the anode side by a bonding wire (6). ) To the upper end (10). The light emitting diode chip (2) fixed to the cup (3a) is covered with a resin (7) filled in the cup (3a), and further, the light emitting diode chip (2) and the cathode-side lead (3). Cup (3a), and the upper end (1) of the lead (4) on the anode side.
0), the bonding wires (5, 6) are sealed in a light-transmitting sealing resin (8). The resin (7) is a light transmissive resin mixed with a fluorescent substance.
【０００３】発光ダイオード装置（１）のカソード側の
リード（３）とアノード側のリード（４）との間に電圧
を印加し、発光ダイオードチップ（２）に通電すると、
発光ダイオードチップ（２）から照射される光は、樹脂
（７）内を通りリード（３）のカップ部（３ａ）の側壁
（３ｃ）で反射した後に、透明な封止樹脂（８）を通り
発光ダイオード装置（１）の外部に放出される。なお、
発光ダイオードチップ（２）の上面から放射されてカッ
プ部（３ａ）の側壁（３ｃ）で反射されずに直接に樹脂
（７）及び封止樹脂（８）を通って発光ダイオード装置
（１）の外部に放出される光もある。封止樹脂（８）の
先端にはレンズ部（８ａ）が形成され、封止樹脂（８）
内を通過する光は、レンズ部（８ａ）によって集光され
て指向性が高められる。発光ダイオードチップ（２）の
発光時に、発光ダイオードチップ（２）から照射される
光は樹脂（７）内に混入された蛍光物質によって異なる
波長に変換されて放出される。この結果、発光ダイオー
ド装置（１）からは発光ダイオードチップ（２）から照
射された光とは異なる波長の光が放出される。When a voltage is applied between the cathode-side lead (3) and the anode-side lead (4) of the light-emitting diode device (1) to energize the light-emitting diode chip (2),
Light emitted from the light emitting diode chip (2) passes through the resin (7), is reflected on the side wall (3c) of the cup (3a) of the lead (3), and then passes through the transparent sealing resin (8). The light is emitted outside the light emitting diode device (1). In addition,
The light emitted from the upper surface of the light emitting diode chip (2) is not reflected by the side wall (3c) of the cup part (3a), but directly passes through the resin (7) and the sealing resin (8), and the light emitting diode device (1) Some light is emitted to the outside. At the tip of the sealing resin (8), a lens portion (8a) is formed, and the sealing resin (8) is formed.
Light passing through the inside is condensed by the lens portion (8a), and the directivity is enhanced. When the light emitting diode chip (2) emits light, light emitted from the light emitting diode chip (2) is converted into a different wavelength by a fluorescent substance mixed in the resin (7) and emitted. As a result, light having a different wavelength from the light emitted from the light emitting diode chip (2) is emitted from the light emitting diode device (1).
【０００４】[0004]
【発明が解決しようとする課題】従来の発光ダイオード
装置（１）を製造する際には、まずリード（３）のカッ
プ部（３ａ）に発光ダイオードチップ（２）を取付け、
次に発光ダイオードチップ（２）とリード（３）間にボ
ンディングワイヤ（５、６）を取付け、その後カップ部
（３ａ）に蛍光物質を含有する樹脂（７）を注入する。
樹脂（７）をカップ部（３ａ）に注入するとき、樹脂充
填装置のシリンジ（syringe／スポイト）の先端をカッ
プ部（３ａ）の上部に近接させる。この場合、シリンジ
の先端が発光ダイオードチップ（２）及びボンディング
ワイヤ（５、６）に接触することが多く、発光ダイオー
ドチップ（２）及びボンディングワイヤ（５、６）に接
触すると、発光ダイオードチップ（２）を傷つけたり、
ボンディングワイヤ（５、６）を変形し又は断線若しく
はフレームとの短絡を生じさせる場合がある。特に金又
はアルミニウム等の軟質金属の細線で形成されるボンデ
ィングワイヤ（５、６）は、小さな外力が加えられても
変形、断線又は短絡を生じやすい。When manufacturing a conventional light emitting diode device (1), first, a light emitting diode chip (2) is attached to a cup (3a) of a lead (3).
Next, bonding wires (5, 6) are attached between the light emitting diode chip (2) and the leads (3), and then a resin (7) containing a fluorescent substance is injected into the cup (3a).
When injecting the resin (7) into the cup (3a), the tip of a syringe (syringe / dropper) of the resin filling device is brought close to the upper part of the cup (3a). In this case, the tip of the syringe often comes into contact with the light emitting diode chip (2) and the bonding wires (5, 6). When the tip of the syringe comes into contact with the light emitting diode chip (2) and the bonding wires (5, 6), the light emitting diode chip ( 2) hurt,
The bonding wires (5, 6) may be deformed or may be disconnected or short-circuited to the frame. In particular, the bonding wires (5, 6) formed of a thin wire of a soft metal such as gold or aluminum are likely to be deformed, disconnected or short-circuited even when a small external force is applied.
【０００５】ボンディングワイヤ（５、６）が断線又は
短絡した発光ダイオード装置（１）は不良品となる結
果、製造歩留まりが低下する。また、外力が加えられた
ボンディングワイヤ（５、６）は、断線又は短絡しなく
ても、発光ダイオードチップ（２）のカソード電極若し
くはアノード電極又はリード（３、４）に対するボンデ
ィングワイヤ（５、６）の接続部分の接着力が低下する
ことがあり、信頼性の点で問題があった。The light emitting diode device (1) in which the bonding wires (5, 6) are disconnected or short-circuited becomes a defective product, resulting in a reduced production yield. Further, the bonding wires (5, 6) to which the external force is applied can be bonded to the cathode electrode or the anode electrode of the light emitting diode chip (2) or the leads (3, 4) without disconnection or short circuit. In some cases, the adhesive strength of the connection portion of (1) may be reduced, and there is a problem in reliability.
【０００６】本発明は、発光ダイオードチップ及びボン
ディングワイヤの損傷、断線、短絡又は変形を発生せず
に、発光ダイオードチップから発生する光の波長変換を
行なう発光ダイオード装置を提供することを目的とす
る。また、本発明は、発光ダイオードチップから照射さ
れる光を蛍光体チップ内で所望の波長に変換して封止樹
脂を通して外部に放出できる発光ダイオード装置を提供
することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode device for converting the wavelength of light generated from a light emitting diode chip without causing damage, disconnection, short circuit or deformation of the light emitting diode chip and bonding wires. . It is another object of the present invention to provide a light emitting diode device that can convert light emitted from a light emitting diode chip into a desired wavelength in a phosphor chip and emit the light to the outside through a sealing resin.
【０００７】[0007]
【課題を達成するための手段】本発明による発光ダイオ
ード装置は、一対の配線導体（３、４）と、一対の配線
導体（３、４）の一方の端部に接着された発光ダイオー
ドチップ（２）と、発光ダイオードチップ（２）の電極
と一対の配線導体（３、４）の少なくとも一方とを電気
的に接続するボンディングワイヤ（５、６）と、発光ダ
イオードチップ（２）、ボンディングワイヤ（５、６）
及び配線導体（３、４）の端部を被覆する光透過性の封
止樹脂（８）とを備えている。発光ダイオードチップ
（２）から照射される光を吸収して他の発光波長に変換
する蛍光物質を含む蛍光体チップ（１２）を一対の配線
導体（３、４）の一方に固着し、光透過性の接着剤（１
５）を介して蛍光体チップ（１２）上に発光ダイオード
チップ（２）を固着する。A light emitting diode device according to the present invention comprises a pair of wiring conductors (3, 4) and a light emitting diode chip (3) bonded to one end of the pair of wiring conductors (3, 4). 2) a bonding wire (5, 6) for electrically connecting an electrode of the light emitting diode chip (2) to at least one of the pair of wiring conductors (3, 4); a light emitting diode chip (2); (5, 6)
And a light-transmitting sealing resin (8) for covering the ends of the wiring conductors (3, 4). A phosphor chip (12) containing a fluorescent substance that absorbs light emitted from the light emitting diode chip (2) and converts the light into another emission wavelength is fixed to one of the pair of wiring conductors (3, 4), and light is transmitted. Adhesive (1
The light emitting diode chip (2) is fixed on the phosphor chip (12) via 5).
【０００８】本発明によれば、発光ダイオードチップ
（２）から四方に放射された光成分の内、下方向に放出
された光成分及び横方向に放出されカップ部（１６）の
側壁（１６ｂ）で散乱し反射した光成分の一部は蛍光体
チップ（１２）に達し、そこで波長変換されて異なった
波長の光となった後に、蛍光体チップ（１２）から放出
される。この波長変換された光は、蛍光体チップ（１
２）によって波長変換されない光成分と混じり合って封
止樹脂（８）を通して発光ダイオード装置（１１）の外
部に放出される。配線導体（３）のカップ部（１６）に
予め蛍光体チップ（１２）を接着した後に発光ダイオー
ドチップ（２）及びボンディングワイヤ（５、６）を取
り付けて本発明の発光ダイオード装置を製造できるの
で、シリンジにより蛍光物質を含んだ樹脂をカップ部
（１６）に充填する必要がなく、発光ダイオードチップ
（２）及びボンディングワイヤ（５、６）の損傷、断
線、短絡又は変形を発生しない。また、発光ダイオード
チップ（２）から照射される光を蛍光体チップ（１２）
内で所望の波長に変換して封止樹脂（８）を通して外部
に放出することができる。光透過性の接着剤（１５）を
使用すると発光ダイオードチップ（２）及び蛍光体チッ
プ（１２）の発光が減衰しない。According to the present invention, of the light components emitted from the light emitting diode chip (2) in all directions, the light components emitted downward and the sidewalls (16b) of the cup portion (16) emitted horizontally. A part of the light component scattered and reflected by the light reaches the phosphor chip (12), where the light component is wavelength-converted into light of a different wavelength, and then emitted from the phosphor chip (12). This wavelength-converted light is applied to the phosphor chip (1).
The light component which is not wavelength-converted by 2) is mixed with the light component and emitted to the outside of the light emitting diode device (11) through the sealing resin (8). Since the phosphor chip (12) is previously bonded to the cup portion (16) of the wiring conductor (3), and the light emitting diode chip (2) and the bonding wires (5, 6) are attached, the light emitting diode device of the present invention can be manufactured. It is not necessary to fill the resin containing the fluorescent substance into the cup part (16) with a syringe, and the light emitting diode chip (2) and the bonding wires (5, 6) are not damaged, broken, short-circuited or deformed. Further, the light emitted from the light emitting diode chip (2) is converted into a phosphor chip (12).
It can be converted to a desired wavelength within and emitted outside through the sealing resin (8). When the light-transmitting adhesive (15) is used, the light emission of the light emitting diode chip (2) and the phosphor chip (12) does not attenuate.
【０００９】本発明の実施の形態では、一対の配線導体
（３、４）の一方の端部に形成されたカップ部（１６）
の底部（１６ａ）に蛍光体チップ（１２）を接着し、蛍
光体チップ（１２）上に発光ダイオードチップ（２）を
接着する。本発明の他の実施の形態では、絶縁性基板
（１７）の一方の主面にカップ部（１６）と、カップ部
（１６）から絶縁性基板（１７）の一方の主面に沿って
互いに反対方向に外側に延びる一対の配線導体（３、
４）とを形成し、カップ部（１６）の底部（１６ａ）に
て一対の配線導体（３、４）の一方に発光ダイオードチ
ップ（２）を固着する。配線導体（３、４）は絶縁性基
板（１７）の一方の主面から側面に沿って他方の主面に
延びる。蛍光体チップ（１２）はカップ部（１６）の上
縁部（１４）から突出しない。蛍光体チップ（１２）が
カップ部（１６）の外側に突出しないため、蛍光体チッ
プ（１２）により光の波長変換を行いつつ外部光による
偽灯も防止できる。In one embodiment of the present invention, a cup (16) formed at one end of a pair of wiring conductors (3, 4).
The phosphor chip (12) is adhered to the bottom (16a) of the above, and the light emitting diode chip (2) is adhered to the phosphor chip (12). In another embodiment of the present invention, a cup portion (16) is provided on one main surface of the insulating substrate (17), and the cup portion (16) is connected to each other along one main surface of the insulating substrate (17). A pair of wiring conductors (3,
4), and the light emitting diode chip (2) is fixed to one of the pair of wiring conductors (3, 4) at the bottom (16a) of the cup (16). The wiring conductors (3, 4) extend from one main surface of the insulating substrate (17) along the side surface to the other main surface. The phosphor chip (12) does not protrude from the upper edge (14) of the cup (16). Since the phosphor chip (12) does not protrude outside the cup (16), it is possible to prevent false light due to external light while performing wavelength conversion of light by the phosphor chip (12).
【００１０】[0010]
【発明の実施の形態】以下、本発明による発光ダイオー
ド装置の実施の形態を図１及び図２について説明する。
図１及び図２では図３に示す箇所と同一の部分には同一
の符号を付し説明を省略する。図１に示すように、本発
明による発光ダイオード装置（１１）は、カソード側の
リードとしての配線導体（３）のカップ部（１６）の底
部（１６ａ）に蛍光体チップ（１２）を接着剤（１３）
により固着する。蛍光体チップ（１２）は蛍光物質を含
む光透過性の結晶体、焼成体、樹脂等の混合無機材料、
混合有機材料又は混合無機有機材料によって構成され
る。接着剤（１３）は、光透過性の又は透明な有機接着
剤が使用される。蛍光体チップ（１２）の上部には、発
光ダイオードチップ（２）がカップ部（１６）の上縁部
（１４）から突出しないように、光透過性の又は透明な
接着剤（１５）を介して固着されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a light emitting diode device according to the present invention will be described below with reference to FIGS.
1 and 2, the same portions as those shown in FIG. 3 are denoted by the same reference numerals, and description thereof will be omitted. As shown in FIG. 1, in a light emitting diode device (11) according to the present invention, a phosphor chip (12) is adhered to a bottom portion (16a) of a cup portion (16) of a wiring conductor (3) as a cathode lead. (13)
To stick. The phosphor chip (12) is made of a mixed inorganic material such as a light-transmitting crystal containing a fluorescent substance, a fired body, a resin,
It is composed of a mixed organic material or a mixed inorganic organic material. As the adhesive (13), a light-transmitting or transparent organic adhesive is used. A light transmitting or transparent adhesive (15) is provided on the upper part of the phosphor chip (12) so that the light emitting diode chip (2) does not protrude from the upper edge (14) of the cup part (16). It is fixed.
【００１１】従来の発光ダイオード装置（１）と同様
に、発光ダイオードチップ（２）のカソード電極及びア
ノード電極をそれぞれボンディングワイヤ（５、６）に
よりカソード側及びアノード側のリードとしての配線導
体（３、４）に接続する。従来の発光ダイオード装置と
同様に封止樹脂（８）によって発光ダイオードチップ
（２）、カツプ部（１６）、ボンディングワイヤ（５、
６）及び配線導体（３、４）の端部が被覆される。配線
導体（３、４）間に電圧を印加して発光ダイオードチッ
プ（２）に通電すると、発光ダイオードチップ（２）か
ら光が照射される。その際に、発光ダイオードチップ
（２）から四方に放射された光成分の内、下方向に放出
された光成分及び横方向に放出されカップ部（１６）の
側壁（３ｃ）で散乱し反射した光成分の一部は蛍光体チ
ップ（１２）に達し、そこで波長変換されて異なった波
長の光となった後に蛍光体チップ（１２）から放出され
る。この波長変換された光は、発光ダイオードチップ
（２）の上面側から照射されて蛍光体チップ（１２）に
よって波長変換されない光成分と混じり合って封止樹脂
（８）を通して発光ダイオード装置（１１）の外部に放
出される。Similarly to the conventional light emitting diode device (1), the cathode electrode and the anode electrode of the light emitting diode chip (2) are connected to the wiring conductors (3) as the cathode and anode leads by bonding wires (5, 6), respectively. , 4). Similar to the conventional light emitting diode device, the light emitting diode chip (2), the cap (16), the bonding wires (5,
6) and the ends of the wiring conductors (3, 4) are covered. When a voltage is applied between the wiring conductors (3, 4) to energize the light emitting diode chip (2), light is emitted from the light emitting diode chip (2). At this time, of the light components emitted in all directions from the light emitting diode chip (2), the light component emitted downward and the light component emitted laterally are scattered and reflected on the side wall (3c) of the cup portion (16). Part of the light component reaches the phosphor chip (12), where the wavelength is converted to light of a different wavelength, and then emitted from the phosphor chip (12). The wavelength-converted light is emitted from the upper surface side of the light-emitting diode chip (2), is mixed with a light component that is not wavelength-converted by the phosphor chip (12), and is mixed with the light-emitting diode device (11) through the sealing resin (8). Released to the outside.
【００１２】具体的には、例えば発光ダイオードチップ
（２）に発光波長のピークが約４４０ｎｍから約４７０
ｎｍのＧａＮ系の青色発光ダイオードチップ（２）を用
い、また蛍光体チップ（１２）に付活剤としてＣｅ（セ
リウム）を適量添加したＹＡＧ（イットリウム・アルミ
ニウム・ガーネット・化学式Ｙ3Ａｌ5Ｏ12、励起波長の
ピーク約４５０ｎｍ、発光波長のピーク約５４０ｎｍの
黄緑色光）の単結晶を用いれば、青色発光ダイオードチ
ップ（２）の発光波長とＹＡＧ蛍光体の励起波長とがほ
ぼ一致するため効率良く波長変換が行なわれる。またＹ
ＡＧ蛍光体の発光スペクトル分布が半値幅約１３０ｎｍ
と広域なため、発光ダイオード装置（１１）の外部に放
出される光は発光ダイオードチップ（２）の発光と蛍光
体チップ（１２）の発光とが混色された青みがかった白
色光となる。蛍光体チップ（１２）の発光スペクトル分
布をシフトさせて発光ダイオード装置（１１）の発光を
更に所望の色調に調整するときは、ＹＡＧ蛍光体の結晶
構造を一部変更すればよい。例えばＧａ（ガリウム）又
は／及びＬｕ（ルテチウム）を適量添加すれば短波長側
にシフトし、Ｇｄ（ガドリニウム）等を適量添加すれば
長波長側にシフトする。More specifically, for example, the light emitting diode chip (2) has a peak emission wavelength from about 440 nm to about 470 nm.
YAG (yttrium / aluminum / garnet / chemical formula Y 3 Al 5 O 12 ) using a GaN-based blue light emitting diode chip (2) of nm and a phosphor chip (12) to which Ce (cerium) is added in an appropriate amount as an activator. When a single crystal having an excitation wavelength peak of about 450 nm and an emission wavelength peak of about 540 nm is used, the emission wavelength of the blue light-emitting diode chip (2) and the excitation wavelength of the YAG phosphor substantially match, so that efficiency is improved. Wavelength conversion is performed well. Also Y
The emission spectrum distribution of the AG phosphor has a half width of about 130 nm.
Light emitted outside the light emitting diode device (11) is bluish white light in which light emitted from the light emitting diode chip (2) and light emitted from the phosphor chip (12) are mixed. To further adjust the emission of the light emitting diode device (11) to a desired color tone by shifting the emission spectrum distribution of the phosphor chip (12), the crystal structure of the YAG phosphor may be partially changed. For example, when an appropriate amount of Ga (gallium) and / or Lu (lutetium) is added, the wavelength shifts to a shorter wavelength, and when an appropriate amount of Gd (gadolinium) or the like is added, the wavelength shifts to a longer wavelength.
【００１３】このように、発光ダイオードチップ（２）
から照射される光の一部は蛍光体チップ（１２）を通過
する際に蛍光体チップ（１２）に含まれる蛍光物質によ
って吸収され、他の異なる発光波長に変換されるため、
発光ダイオードチップ（２）から照射された光とは異な
る発光色となって封止樹脂（８）内に入射される。発光
ダイオードチップ（２）及び蛍光体チップ（１２）の発
光を減衰させないため、接着剤（１３）（１５）は、発
光ダイオードチップ（２）から照射される光及び蛍光体
チップ（１２）を通り波長変換された光の両方の発光波
長に対し透明である。この場合、発光ダイオード装置
（１１）から外部に放出される光の指向角を広げ又は発
光ダイオードチップ（２）から極力多量の光を蛍光体チ
ップ（１２）に到達させるため、粉末シリカ等の散乱剤
を封止樹脂（８）に混合しても良い。As described above, the light emitting diode chip (2)
A part of the light emitted from the phosphor chip (12) is absorbed by the phosphor contained in the phosphor chip (12) when passing through the phosphor chip (12), and is converted into another different emission wavelength.
The light emitted from the light emitting diode chip (2) has a different emission color from the light emitted from the light emitting diode chip (2), and is incident on the sealing resin (8). In order not to attenuate the light emission of the light emitting diode chip (2) and the phosphor chip (12), the adhesives (13) and (15) pass through the light emitted from the light emitting diode chip (2) and the phosphor chip (12). The wavelength-converted light is transparent to both emission wavelengths. In this case, in order to widen the directivity angle of the light emitted from the light emitting diode device (11) to the outside or to allow as much light as possible from the light emitting diode chip (2) to reach the phosphor chip (12), scattering of powdered silica or the like occurs. An agent may be mixed with the sealing resin (8).
【００１４】本実施の形態では、前記のように配線導体
（３）のカップ部（１６）に蛍光体チップ（１２）を接
着した後にボンディングワイヤ（５、６）を取付けて、
本発明の発光ダイオード装置（１１）を製造できるの
で、シリンジにより蛍光物質の混入した樹脂をカップ部
（１６）に充填する必要がなく、発光ダイオードチップ
（２）及びボンディングワイヤ（５、６）の損傷、断
線、短絡又は変形を発生しない。また、発光ダイオード
チップ（２）から照射される光を蛍光体チップ（１２）
内で、所望の波長に変換して封止樹脂（８）を通して外
部に放出することができる。更に、複数の発光ダイオー
ド装置（１１）が互いに隣接して配置されるとき、通電
され且つ点灯された発光ダイオード装置（１１）からの
放射光によって隣接する他の発光ダイオード装置（１
１）が励起されて点灯して見える偽灯が生じるおそれが
ある。本実施の形態では、発光ダイオードチップ（２）
がカップ部（１６）の上縁部（１４）よりも外側に突出
しないため、蛍光体チップ（１２）により光の波長変換
を行いつつ外部光による偽灯を確実に防止できる。な
お、蛍光体チップ（１２）がカップ部（１６）の上縁部
（１４）よりも外側に突出しなければ、この偽灯防止効
果を得ることができる。In this embodiment, the bonding wires (5, 6) are attached after the phosphor chip (12) is bonded to the cup (16) of the wiring conductor (3) as described above.
Since the light emitting diode device (11) of the present invention can be manufactured, there is no need to fill the cup portion (16) with a resin mixed with a fluorescent substance with a syringe, and the light emitting diode chip (2) and the bonding wires (5, 6) can be used. Does not cause damage, disconnection, short circuit or deformation. Further, the light emitted from the light emitting diode chip (2) is converted into a phosphor chip (12).
Inside, it can be converted to a desired wavelength and emitted to the outside through the sealing resin (8). Furthermore, when a plurality of light emitting diode devices (11) are arranged adjacent to each other, the light emitting diode device (11) that is energized and turned on emits light from the adjacent light emitting diode device (1).
There is a possibility that a false light that appears to be lit by being excited when 1) is generated. In the present embodiment, the light emitting diode chip (2)
Does not protrude outside the upper edge portion (14) of the cup portion (16), it is possible to surely prevent false light by external light while performing wavelength conversion of light by the phosphor chip (12). If the phosphor chip (12) does not protrude beyond the upper edge (14) of the cup (16), this false light prevention effect can be obtained.
【００１５】図２は、チップ形発光ダイオード装置（２
１）に適用した本発明の他の実施の形態を示す。チップ
形発光ダイオード装置（２１）では、絶縁性基板（１
７）の一方の主面にカップ部（１６）と、相互に離間し
た配線導体（３、４）とが形成され、配線導体（３、
４）の一方の端部は、カップ部（１６）内に配置され
る。発光ダイオードチップ（２）はカップ部（１６）の
底部（１６ａ）にて配線導体（３）に蛍光体チップ（１
２）を介して固着される。図１の発光ダイオード装置と
同様に、蛍光体チップ（１２）は接着剤（１３）によつ
て配線電極（３）に固着され、発光ダイオードチップ
（２）は接着剤（１５）によって蛍光体チップ（１２）
に固着される。接着剤（１３、１５）は、発光ダイオー
ドチップ（２）から照射される光及び蛍光体チップ（１
２）を通り波長変換された光の両方の発光波長に対し透
明である。配線導体（３、４）の他方の端部は、絶縁性
基板（１７）の側面及び他方の主面に延びて配置され
る。発光ダイオードチップ（２）のカソード電極及びア
ノード電極はそれぞれボンディングワイヤ（５、６）に
より配線導体（３、４）に接続される。発光ダイオード
チップ（２）、カップ部（１６）、ボンディングワイヤ
（５、６）、配線導体（３、４）の一方の端部側は絶縁
性基板（１７）の一方の主面に形成された断面台形状の
封止樹脂（８）によって被覆される。図２の発光ダイオ
ード装置（２１）でも、発光ダイオードチップ（２）か
ら照射された光の一部が蛍光体チツプ（１２）の蛍光物
質によって発光波長が変換され、図１の発光ダイオード
装置と同様の作用効果が得られる。FIG. 2 shows a chip type light emitting diode device (2).
Another embodiment of the present invention applied to 1) is shown. In the chip type light emitting diode device (21), the insulating substrate (1) is used.
A cup part (16) and wiring conductors (3, 4) spaced apart from each other are formed on one main surface of the wiring conductor (3, 7).
One end of 4) is arranged in the cup part (16). The light emitting diode chip (2) is attached to the wiring conductor (3) at the bottom (16a) of the cup (16) by the phosphor chip (1).
It is fixed through 2). Similar to the light emitting diode device of FIG. 1, the phosphor chip (12) is fixed to the wiring electrode (3) by an adhesive (13), and the light emitting diode chip (2) is fixed to the phosphor chip by an adhesive (15). (12)
To be fixed. The adhesives (13, 15) are used for light emitted from the light emitting diode chip (2) and the phosphor chip (1).
It is transparent to both emission wavelengths of the wavelength-converted light passing through 2). The other ends of the wiring conductors (3, 4) are arranged to extend to the side surface and the other main surface of the insulating substrate (17). The cathode electrode and the anode electrode of the light emitting diode chip (2) are connected to the wiring conductors (3, 4) by bonding wires (5, 6), respectively. One end side of the light emitting diode chip (2), the cup part (16), the bonding wires (5, 6), and the wiring conductors (3, 4) is formed on one main surface of the insulating substrate (17). It is covered with a sealing resin (8) having a trapezoidal cross section. In the light emitting diode device (21) of FIG. 2 as well, a part of the light emitted from the light emitting diode chip (2) has its emission wavelength converted by the fluorescent substance of the phosphor chip (12). The operation and effect of the invention can be obtained.
【００１６】本発明の前記実施の形態は変更が可能であ
る。例えば、図１及び図２の発光ダイオード装置（１
１、２１）では、カップ部（１６）に接着剤（１３）に
よって蛍光体チップ（１２）を接着した後に、接着剤
（１５）により蛍光体チップ（１２）の上面に発光ダイ
オードチップ（２）を接着するか又は予め蛍光体チップ
（１２）と発光ダイオードチップ（２）とを接着剤（１
５）で接着した組立体を用意した後、接着剤（１３）に
より蛍光体チップ（１２）をカップ部（１６）の底部
（１６ａ）に接着してもよい。また、発光ダイオードチ
ップ（２）の表面を蛍光物質を含有しない透明の樹脂で
被覆してもよい。蛍光物質を含有しない樹脂であれば、
発光ダイオードチップ（２）の上にラフに被覆でき、ま
た流動性にも優れるので、発光ダイオードチップ（２）
又はボンディングワイヤ（５、６）の損傷等を生じさせ
ることがない。また、カップ部（１６）の上縁部（１
４）から突出しない追加の蛍光体チップ（１２）をカッ
プ部（１６）の側壁（１６ｂ）に固着してもよい。図２
の発光ダイオード装置（２１）では、絶縁性基板（１
７）の一方の主面にカップ部（１６）を設けない構造と
することもできる。The above embodiment of the present invention can be modified. For example, the light emitting diode device (1) shown in FIGS.
In (1, 21), after the phosphor chip (12) is adhered to the cup portion (16) with the adhesive (13), the light emitting diode chip (2) is attached to the upper surface of the phosphor chip (12) with the adhesive (15). Or bonding the phosphor chip (12) and the light emitting diode chip (2) in advance with an adhesive (1).
After preparing the assembly bonded in 5), the phosphor chip (12) may be bonded to the bottom (16a) of the cup portion (16) with an adhesive (13). Further, the surface of the light emitting diode chip (2) may be covered with a transparent resin containing no fluorescent substance. If the resin does not contain a fluorescent substance,
The light emitting diode chip (2) can be roughly coated on the light emitting diode chip (2) and has excellent fluidity.
In addition, the bonding wires (5, 6) are not damaged. In addition, the upper edge portion (1) of the cup portion (16)
4) An additional phosphor chip (12) that does not protrude may be fixed to the side wall (16b) of the cup part (16). FIG.
In the light emitting diode device (21), the insulating substrate (1) is used.
The structure in which the cup portion (16) is not provided on one main surface of 7) may be adopted.
【００１７】[0017]
【発明の効果】前記のように、本発明では、蛍光物質を
含む樹脂をカップ部に注入する必要がないため、発光ダ
イオードチップ又はボンディングワイヤを損傷、破断、
短絡又は変形させない。このため、蛍光体により発光ダ
イオードチップから照射される光を所望の波長に変換で
き且つ信頼性が高く安価な発光ダイオード装置を歩留ま
り良く得ることができる。As described above, according to the present invention, since it is not necessary to inject a resin containing a fluorescent substance into the cup, the light emitting diode chip or the bonding wire may be damaged or broken.
Do not short or deform. For this reason, the light emitted from the light emitting diode chip can be converted into a desired wavelength by the phosphor, and a highly reliable and inexpensive light emitting diode device can be obtained with high yield.
【図１】 本発明による発光ダイオード装置の断面図FIG. 1 is a sectional view of a light emitting diode device according to the present invention.
【図２】 本発明の他の実施の形態を示す発光ダイオー
ド装置の断面図FIG. 2 is a cross-sectional view of a light-emitting diode device showing another embodiment of the present invention.
【図３】 従来の発光ダイオード装置の断面図FIG. 3 is a cross-sectional view of a conventional light emitting diode device.
２・・発光ダイオードチップ、 ３、４・・配線導体、
５、６・・ボンディングワイヤ、 ８・・封止樹脂、
１１、２１・・発光ダイオード装置、 １２・・蛍光
体チップ、 １３、１５・・接着剤、 １６・・カップ
部、 １７・・絶縁性基板、2, light-emitting diode chip, 3, 4, wiring conductor,
5,6..bonding wire, 8..sealing resin,
11, 21 ··· Light emitting diode device, 12 ·· Phosphor chip, 13, 15 ·· Adhesive, 16 ·· Cup part, 17 ·· Insulating substrate,
Claims (5)
配線導体（３、４）の一方の端部に接着された発光ダイ
オードチップ（２）と、該発光ダイオードチップ（２）
の電極と前記一対の配線導体（３、４）の少なくとも一
方とを電気的に接続するボンディングワイヤ（５、６）
と、前記発光ダイオードチップ（２）、ボンディングワ
イヤ（５、６）及び配線導体（３、４）の端部を被覆す
る光透過性の封止樹脂（８）とを備えた発光ダイオード
装置において、 前記発光ダイオードチップ（２）から照射される光を吸
収して他の発光波長に変換する蛍光物質を含む蛍光体チ
ップ（１２）を前記一対の配線導体（３、４）の一方に
固着し、 光透過性の接着剤（１５）を介して前記蛍光体チップ
（１２）上に前記発光ダイオードチップ（２）を固着し
たことを特徴とする発光ダイオード装置。1. A pair of wiring conductors (3, 4), a light emitting diode chip (2) adhered to one end of the pair of wiring conductors (3, 4), and the light emitting diode chip (2)
Bonding wires (5, 6) for electrically connecting the electrodes and at least one of the pair of wiring conductors (3, 4).
And a light-transmitting sealing resin (8) covering the ends of the light-emitting diode chip (2), bonding wires (5, 6) and wiring conductors (3, 4). A phosphor chip (12) containing a phosphor that absorbs light emitted from the light emitting diode chip (2) and converts the light to another emission wavelength is fixed to one of the pair of wiring conductors (3, 4); A light-emitting diode device comprising the light-emitting diode chip (2) fixed to the phosphor chip (12) via a light-transmitting adhesive (15).
端部に形成されたカップ部（１６）の底部（１６ａ）に
前記蛍光体チップ（１２）を接着し、該蛍光体チップ
（１２）上に前記発光ダイオードチップ（２）を接着し
た請求項１に記載の発光ダイオード装置。2. The phosphor chip (12) is bonded to a bottom (16a) of a cup (16) formed at one end of the pair of wiring conductors (3, 4). The light-emitting diode device according to claim 1, wherein the light-emitting diode chip (2) is adhered on the (12).
プ部（１６）と、該カップ部（１６）から前記絶縁性基
板（１７）の一方の主面に沿って互いに反対方向に外側
に延びる前記一対の配線導体（３、４）とを形成し、前
記カップ部（１６）の底部（１６ａ）にて前記一対の配
線導体（３、４）の一方に前記発光ダイオードチップ
（２）を固着した請求項１に記載の発光ダイオード装
置。3. A cup portion (16) on one main surface of the insulating substrate (17), and in opposite directions from the cup portion (16) along one main surface of the insulating substrate (17). The pair of wiring conductors (3, 4) extending outward are formed, and the light emitting diode chip (2) is attached to one of the pair of wiring conductors (3, 4) at the bottom (16a) of the cup portion (16). 2. The light emitting diode device according to claim 1, wherein the light emitting diode device is fixed.
部（１６）の上縁部（１４）から突出しない請求項２又
は請求項３の何れかに記載の発光ダイオード装置。4. The light emitting diode device according to claim 2, wherein said phosphor chip (12) does not protrude from an upper edge portion (14) of said cup portion (16).
板（１７）の一方の主面から側面に沿って他方の主面に
延びる請求項３に記載の発光ダイオード装置。5. The light emitting diode device according to claim 3, wherein the wiring conductors extend from one main surface of the insulating substrate to the other main surface along the side surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22278597A JP2947343B2 (en) | 1997-08-19 | 1997-08-19 | Light emitting diode device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22278597A JP2947343B2 (en) | 1997-08-19 | 1997-08-19 | Light emitting diode device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1168169A JPH1168169A (en) | 1999-03-09 |
| JP2947343B2 true JP2947343B2 (en) | 1999-09-13 |
Family
ID=16787866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22278597A Expired - Fee Related JP2947343B2 (en) | 1997-08-19 | 1997-08-19 | Light emitting diode device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2947343B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100990337B1 (en) * | 2004-02-19 | 2010-10-29 | 홍-유안 테크놀러지 씨오., 엘티디. | A fabrication equipment of a light emitting device |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3400958B2 (en) * | 1999-07-07 | 2003-04-28 | 株式会社シチズン電子 | Multicolor light emitting diode |
| WO2000079605A1 (en) | 1999-06-23 | 2000-12-28 | Citizen Electronics Co., Ltd. | Light emitting diode |
| JP2001085747A (en) * | 1999-09-13 | 2001-03-30 | Sanken Electric Co Ltd | Semiconductor light-emitting device |
| CN1225801C (en) * | 2000-02-09 | 2005-11-02 | 日本光源股份有限公司 | Light source |
| JP2002141559A (en) * | 2000-10-31 | 2002-05-17 | Sanken Electric Co Ltd | Light emitting semiconductor chip assembly and light emitting semiconductor lead frame |
| EP1473771A1 (en) * | 2003-04-14 | 2004-11-03 | Epitech Corporation, Ltd. | Color mixing light emitting diode |
| JP6024685B2 (en) * | 2014-03-06 | 2016-11-16 | 日亜化学工業株式会社 | Light emitting device |
-
1997
- 1997-08-19 JP JP22278597A patent/JP2947343B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100990337B1 (en) * | 2004-02-19 | 2010-10-29 | 홍-유안 테크놀러지 씨오., 엘티디. | A fabrication equipment of a light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1168169A (en) | 1999-03-09 |
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