JP2009055066A - Light emitting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device flip-chip mounting a light emitting element, which has electrodes formed on its one identical surface, stably to lead electrodes located in a concave portion of a package. <P>SOLUTION: The light emitting device includes: a package having a concave portion, and formed by insert molding so that a pair of positive and negative lead electrodes are exposed on the bottom of the concave portion; and a light emitting element face-down mounted on the lead electrodes. Between the lead electrodes and the light emitting element, provided is a sub-mount mounting the light emitting element thereon. The sub-mount is provided with a conductive member at least on its top surface, and the conductive member is electrically connected to the light emitting element and the lead electrodes by a conductive joint member. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

The present invention relates to a light-emitting diode that emits red light from ultraviolet light that is optimal for light sources of displays, optical communications, OA devices, and portable devices, and has a particularly excellent heat dissipation path and mechanical stress from the outside. The present invention relates to a light emitting device having excellent durability.

Nowadays, light emitting diodes capable of emitting ultraviolet light, light emitting diodes capable of emitting white light, and laser diodes have been developed as light emitting devices in addition to light emitting diodes capable of emitting RGB (red, green, and blue) with high luminance. These semiconductor light emitting devices have excellent characteristics such as high luminance, low power consumption and long life. For this reason, it has begun to be used not only as a backlight for various types of outdoor and indoor displays, traffic signals such as traffic and railways, various indicators, signs, and liquid crystal devices, but also as illumination itself.

As such a light emitting device, a surface mount type light emitting device shown in FIGS. 14 and 15 is used. The surface-mounted light emitting device of FIGS. 14 and 15 is called a frame insert type, and lead electrodes are formed by injection molding so that a pair of positive and negative lead electrodes to which light emitting elements are electrically connected are sandwiched from above and below by resin. Is integrated with the resin package. The end portion of the lead electrode protrudes to the outside, and is connected to a wiring pattern or the like by bending the end portion later. The resin package has an opening, and the lead electrode is exposed so that the light emitting element is mounted on the lead electrode. The opening has a tapered shape, and the light from the light emitting element can be efficiently reflected by inclining the inner wall. The light emitting element is
A pair of positive and negative electrodes are formed on the opposing surface, one electrode of the light emitting element is connected to the lead electrode of the resin package, and the other electrode is connected to the other lead electrode by a conductive wire. ing.

JP-A-11-87780

However, when a light-emitting element such as a gallium nitride compound semiconductor, which is difficult to form electrodes on both sides, is mounted on a frame insert type resin package, the electrodes are placed on the same surface as in the face-up mounting form. It must be formed and electrically connected by two wires. As described above, when two wires are formed, the wire is shaded and light extraction efficiency is deteriorated, and a defect due to wire breakage or the like occurs, resulting in a low yield. Therefore, mounting of the light emitting element by face down is preferable. However, in the frame insert type, when a 0.15 mm thick copper alloy is used, the distance between the positive and negative lead electrodes is about 0.1.
The limit is 5 mm, and it is difficult to make the distance between the positive and negative electrodes 0.1 mm or less that allows the light-emitting element to be placed face-down with good stability. In addition, the adhesion of the lead electrode to the resin package is not necessarily good, and it is affected by heat, weight, and ultrasonic waves given when the light emitting element and the lead electrode are joined,
Since both opposing lead electrodes slightly vibrate, they cannot be fully alloyed. SUMMARY OF THE INVENTION An object of the present invention is to provide a surface-mount light-emitting device that uses a flip-chip light-emitting element and has excellent stability and high reliability.

A semiconductor light emitting device according to claim 1 of the present invention has a recess, and a package formed by insert molding so that a pair of positive and negative lead electrodes are exposed on the bottom surface of the recess,
A light-emitting device having a light-emitting element mounted face-down on the lead electrode, the light-emitting device having a sub-mount capable of mounting the light-emitting element between the lead electrode and the light-emitting element; Has a conductive member, and the conductive member is
The light emitting element and the lead electrode are electrically connected by a conductive bonding member.
With such a configuration, the light-emitting element and the lead electrode can be electrically connected with high stability by face-down mounting, so that a highly reliable surface-mounted light-emitting device can be obtained.

In the semiconductor light emitting device according to claim 2 of the present invention, the submount has a rectangular shape extending in the direction between the lead electrodes. With this configuration,
The submount is arranged over the negative electrode from the positive electrode, and the light emitting element can be electrically connected to the lead electrode.

In the semiconductor light emitting device according to claim 3 of the present invention, the submount has a short side longer than the diagonal of the light emitting element. If comprised in this way, the adhesiveness of the electroconductive member and light emitting element which were formed on the submount surface with the electroconductive joining member can be improved, and it can be used with sufficient stability.

In the semiconductor light emitting device according to claim 4 of the present invention, the submount has an area at least twice that of the light emitting element. With such a configuration, heat dissipation is improved, and handling is facilitated when placing on the lead electrode.

In the semiconductor light emitting device according to claim 5 of the present invention, the submount has a through hole penetrating in the thickness direction, and the through hole is continuous with the conductive members on the upper surface and the lower surface of the submount on the inner wall. A conductive member is provided, and the upper surface and the lower surface of the submount are electrically connected through the through hole. With such a configuration, a heat dissipation path can be further provided at a position close to the light emitting element, and heat dissipation efficiency can be improved.

In the semiconductor light emitting device according to claim 6 of the present invention, a plurality of through holes are formed. With such a configuration, the heat dissipation efficiency described above can be further increased.

In the semiconductor light emitting device according to claim 7 of the present invention, the central axis of the light emitting element coincides with the central axis of the submount, and the through hole is positioned symmetrically with respect to the central axis in the outer peripheral portion of the light emitting element. Is formed. Such a configuration is preferable because the stability of the mounting portion of the light emitting element is increased and there is no bias in the adhesion and heat dissipation path.

In the semiconductor light emitting device according to claim 8 of the present invention, the through hole has a cylindrical shape. Such a configuration is preferable because the conductive members formed on the upper surface and the lower surface of the submount on which the light emitting element is placed can be easily connected and the flow of heat becomes smoother.

In the semiconductor light emitting device according to claim 9 of the present invention, the adhesive portion is in contact with at least a part of the inner wall of the through hole. With such a configuration, since the bonding area between the submount and the conductive bonding member can be increased, peeling and deviation of the submount from the lead electrode can be suppressed.

In the semiconductor light emitting device according to claim 10 of the present invention, the submount is made of glass epoxy resin or BT resin. With such a configuration, the submount can be formed relatively easily.

According to the present invention, since a submount having a sufficient length for mounting between lead electrodes can be used, a light emitting element can be electrically connected with good stability by face-down mounting. It is possible to provide a surface-mount light-emitting device that is rich in surface light.

    Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 and 2 show a light-emitting device according to an embodiment of the present invention.
A submount is disposed in the package in which the lead electrodes are integrally formed so as to straddle between the positive and negative electrodes of the lead electrodes. Conductive members are formed on the upper and lower surfaces of the submount. The conductive member on the lower surface of the submount is in a state of being electrically connected to the lead electrode. In addition, the conductive member on the upper surface of the submount is formed so as to be separated so that the light emitting element is placed with the electrode formation surface side facing and can be electrically connected.

With such a configuration, the light-emitting element can be placed face-down with good stability. The light from the light emitting element is emitted from the substrate side to the outside, so that the efficiency of extracting the light to the outside is improved, and no wire for conducting is required, so there is no defect due to disconnection or the like. , You can also increase the yield. Furthermore, since the submount is formed with a conductive member made of a thin metal thin film on a relatively hard insulating substrate or the like, the submount is affected by slight vibration that occurs when the electrode of the light emitting element and the conductive member are joined. It can be alloyed without any problems. Therefore, the light-emitting element can be prevented from being peeled off or displaced, so that a highly reliable light-emitting device can be provided.

In addition, when a through-hole is formed in the submount as shown in FIG. 3, it is possible to provide a conductive material also inside the through-hole, and it is possible to improve heat dissipation, and further, it is disposed on the lead electrode. Since the conductive joining member used in the process can be provided up to the inside of the through hole, the adhesion is improved.

In addition, after the submount on which the light emitting element is placed in the package recess shown in the sectional view of FIG. 4 is installed so as to cross between the two electrodes of the lead electrode, a translucent resin such as epoxy resin or silicone resin is used. It can also be sealed with. If it does in this way, a light emitting element and a submount can be protected, and the brightness of light can also be raised by mixing a glass filler etc.

Further, as shown in FIG. 7, the light emitting element and the submount can be integrated with the sealing resin in advance before being arranged in the package recess. If you do this,
The adhesion between the light-emitting element and the submount can be further improved and peeling can be prevented, so that it becomes easy to handle, and by adding a fluorescent substance, a diffusing agent, or the like inside the sealing resin, the light emission characteristics can be further improved. . Hereafter, each structure in embodiment of this invention is explained in full detail.

(Light emitting element)
In the present invention, the light emitting element is not particularly limited, but has a pair of positive and negative electrodes on the same surface, and when a fluorescent material is used, a light emitting layer capable of emitting an emission wavelength capable of exciting the fluorescent material. A semiconductor light-emitting element having is preferable. Examples of such semiconductor light emitting devices include various semiconductors such as AlInGaP and GaN, but nitride semiconductors capable of emitting short wavelengths capable of efficiently exciting fluorescent materials (
_{In X Al Y Ga 1-X} -Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferably exemplified. Examples of the semiconductor structure include a homostructure, a heterostructure, or a double heterostructure having a MIS junction, a PIN junction, a pn junction, or the like. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal. In addition, a single quantum well structure or a multiple quantum well structure in which the semiconductor active layer is formed in a thin film in which a quantum effect is generated can be used.

When nitride semiconductor is used, the semiconductor substrate is sapphire, spinel, SiC
A material such as Si, ZnO or the like is preferably used. In order to form a nitride semiconductor with good crystallinity with high productivity, it is preferable to use a sapphire substrate. A buffer layer of GaN, AlN, GaAlN, etc. is formed on the sapphire substrate, and p is formed thereon.
A nitride semiconductor having an n junction is formed.

As an example of a light-emitting element having a pn junction using a nitride semiconductor, a first contact layer formed of n-type gallium nitride on a buffer layer, n-type aluminum nitride,
A first clad layer made of gallium, an active layer made of indium gallium nitride, a second clad layer made of p-type aluminum nitride / gallium, and a second contact layer made of p-type gallium nitride in this order For example, a laminated double hetero structure.

Nitride semiconductors exhibit n-type conductivity without being doped with impurities. When forming a desired n-type nitride semiconductor, for example, to improve luminous efficiency, it is preferable to appropriately introduce Si, Ge, Se, Te, C, etc. as an n-type dopant. On the other hand, when forming a p-type nitride semiconductor, p-type dopants Zn, Mg, Be, C
a, Sr, Ba and the like are doped. Since nitride semiconductors are not easily converted to p-type by simply doping with a p-type dopant, it is preferable to reduce resistance by heating in a furnace or plasma irradiation after introducing the p-type dopant. After the electrodes are formed, a light emitting element made of a nitride semiconductor can be formed by cutting the semiconductor wafer into chips.

In the light emitting diode of the present invention, in order to emit white light, the emission wavelength of the light emitting element is preferably 400 nm or more and 530 nm or less in consideration of the complementary color relationship with the emission wavelength from the fluorescent material, deterioration of the translucent resin, and the like. 420 nm or more and 490 nm or less is more preferable. In order to improve excitation and light emission efficiency of the light emitting element and the fluorescent material, respectively, 450 nm or more and 475 nm or less are more preferable.

(Submount)
As shown in FIG. 2, the submant according to the embodiment of the present invention has a light emitting element mounted on a conductive member formed on the upper surface, and the conductive member formed on the lower surface is a lead integrated with the package. Bonded with electrodes. Since the conductive member is patterned by etching a thin film such as copper formed on the surface of the submount, the conductive member can be provided with a smaller interval than between the positive and negative lead electrodes in the package. With such a configuration, the light emitting element and the lead electrode can be electrically connected with high stability. Any material can be used as the material for the submount as long as it can be easily processed and is durable. As specific examples, glass epoxy resins described later, or various materials such as copper, aluminum, various alloys, and ceramics can be used.

When the submount is made of a conductive material such as a metal material, the heat conductivity is higher than that of the insulating material, and thus heat generated in the light emitting element can be efficiently guided to the outside. As a material used for the conductive member, in order to efficiently extract heat from the light emitting element to the outside, a material having good thermal conductivity is preferable, and Au, Cu, Al, or an alloy thereof can be suitably used. In particular, copper and aluminum can be suitably used from the viewpoint of ease of processing. Thus, when using a conductive material as a submount, after forming an insulating film such as SiO ₂ or SiN _X to be electrically insulated, a thin film pattern such as copper, gold, silver, or an alloy containing these metals, A film formed by CVD, sputtering or plating such as a laminated film containing these metals can be suitably used. A metal or alloy having a high reflectance can be used as appropriate according to the emission wavelength.

When the submount is made of a semiconductor material, a protective element can be provided inside the submount, and the electrostatic withstand voltage can be increased.

Moreover, since it becomes easy to handle that it consists of an insulating material, it is preferable.
For example, a submount can be formed by forming a conductive member on the flat plate of the glass epoxy resin described above. Such a conductive member is provided so as to be continuous from the upper surface to the lower surface of the submount in order to electrically connect the electrode provided on the light emitting element and the lead electrode of the package. The conductive member may be provided so as to be exposed on the side surface of the submount. When the through hole is provided as shown in FIG. 5, the conductive member may be provided inside the through hole. When providing through a through-hole, you may provide only in the side by which a light emitting element is arrange | positioned like FIG. 6, but the heat dissipation effect can be acquired more by covering all the inner walls of a through-hole. When the distance between the positive and negative electrodes of the light-emitting element is 0.1 mm, the conductive member on the upper surface of the submount is approximately 0.05 to 0.00 mm so that it can be joined to these electrodes.
Since it is possible to provide an interval of about 08 mm, it is possible to mount face down.

The above-mentioned through-hole can be formed by using a drill, a laser, a punching process or the like on a flat plate made of a glass epoxy resin on which a copper thin film for forming a conductive member is previously formed. By providing the through hole, the heat dissipation can be further improved, and the inner wall of the through hole and the conductive bonding member can be brought into contact with each other to be firmly bonded to the lead electrode.

Such a through hole is formed to have openings on the upper surface and the lower surface of the submount on which the light emitting element is placed. If the submount is electrically connected to the light emitting element, a through hole can be provided in the vicinity of the mounting portion of the light emitting element. However, if the through hole is formed apart from the light emitting element, the stability is improved. It is preferable because the light emitting element can be mounted on the submount well.

Further, the number and size of the through holes are not limited. Although only one through-hole can be provided, providing a plurality of through-holes increases the portion covered with the conductive material and enlarges the heat dissipation path, thereby improving the heat dissipation. In addition, since the contact area between the bonding member provided for bonding to the lead electrode and the inner wall of the through hole is increased, the adhesion is improved. When an even number of through-holes are provided, stability and heat dissipation can be achieved if they are provided symmetrically with respect to the center of the submount or the center axis of the light emitting element mounted on the center of the submount. Is preferable. In FIG. 5, the through-hole is formed in the same shape from the upper surface to the lower surface in a substantially directly downward direction, but may be formed to be inclined from the upper surface to the lower surface. In addition, it is preferable that the through-hole has a cylindrical shape because stress is less likely to be partially concentrated, which does not cause a problem and can dissipate heat uniformly. However, the shape is not limited to this, and an ellipse, a quadrangle, a triangle, and the like can be selected, and the shape of the opening, the angle of the side surface of the through hole, and the like are not particularly limited. Moreover, when it forms so that it may become small as it approaches a lower surface like FIG. 9, since an electroconductive joining member will be caught in a through-hole inside when it hardens | cures, it will become more stable and will not peel easily.

The size and the like of the submount can be appropriately determined according to the light emitting element and the package. The width of the submount may be narrower than that of the light-emitting element as long as the light-emitting element can be placed and conducted between the lead electrodes. If the submount is substantially rectangular or longer than the light emitting element, and the length of the short side is longer than the diagonal of the light emitting element, it should be easy to handle and be placed on the lead electrode with good stability. Can do. When the area of the submount is 2 times or more or 5 to 100% of the area of the bottom surface of the recess of the package, the heat dissipation becomes good. As shown in FIG. 10, the submount can be disposed on the entire surface so as to cover the concave portion of the package. The submount covers part or all of the package exposed between the lead electrodes, and the conductive member on the surface of the submount has a high reflectivity, so that light absorption by the package can be suppressed and reflected. Therefore, it is possible to efficiently extract light to the outside. Further, the package exposed portion between the lead electrodes is 5 to 100%, preferably 50%, depending on the submount.
By covering the above, the reflectance can be increased as described above.

The thickness of the submount is not particularly limited as long as it is within the package and does not affect the directivity of the light emitting device, but if it is 0.2 to 0.3 mm, the heat dissipation becomes good. Since the light emitting element is positioned in the middle with respect to the depth of the package, the influence of the thermal stress of the resin that seals the package on the light emitting element is preferably reduced.

(package)
The package of the present invention has a concave shape, and a pair of positive and negative lead electrodes are exposed on the bottom surface of the concave portion. When such a package is made of a resin, it is formed relatively easily by insert molding in which the lead electrode is sandwiched between the forming molds, the molten resin is injected from the gate into the closed mold and cured. can do.

The lead electrode can be configured using a high thermal conductor such as iron-containing copper. In addition, in order to improve the reflectance of light from the light emitting element and prevent the lead base material from being oxidized, the surface of the lead electrode can be plated with metal such as silver, aluminum, copper or gold.
Further, it is preferable to make the surface smooth in order to improve the reflectance of the surface of the lead electrode.
In addition, it is preferable to increase the area of the lead electrode, and by doing this,
The heat dissipation can be improved, and the temperature rise of the light emitting element disposed via the submount can be effectively suppressed. Accordingly, a relatively large amount of power can be input to the light emitting element, and the light output can be improved.

A lead electrode forms the part used as the positive / negative lead electrode of each package molded object by punching a long metal plate using a press. In the portion corresponding to each package molded body of the long metal plate after press working, the positive lead electrode is negative so that one end surface thereof faces the one end surface of the negative lead electrode at the bottom surface of the package recess after molding. These lead electrodes are separated from each other.

The material used for the package in which the lead electrode is insert-molded is a liquid crystal polymer, polyphthalamide, polybutylene terephthalate, or the like.
Preferably, it is polyphthalamide, and the package made of such a resin is
It does not easily deteriorate against heat and light from the light emitting element, and can withstand stresses such as bending the lead frame.

Further, the inside of the package recess can be sealed with a mold resin after the submount on which the light emitting element is mounted is joined to the lead electrode.

(Conductive bonding member)
The conductive bonding member according to the embodiment of the light emitting device of the present invention includes a first bonding member for bonding the light emitting element and the conductive member on the upper surface of the submount, and the conductive member and the package on the lower surface of the submount. There is a second joining member that joins the molded lead electrode.

The first joining member is formed by bumps made of aluminum, gold, solder, or the like. Such a bump is placed on the electrode of the light-emitting element, and is placed opposite to the wiring pattern on the light-emitting element mounting surface of the submount.
. A load is applied to the light emitting element while applying an ultrasonic wave of 5 to 2 W, and bonding is performed by alloying a conductive bonding member between the light emitting element and the submount.

The second adhesive member is joined with a conductive paste of silver, gold, or copper. After an appropriate amount of such a conductive paste is applied to two locations on the submount mounting portion, the submount is mounted, and thermosetting is performed at 150 ° C. for 1 hour to enable bonding.

In addition to the portion where the second adhesive member is provided between the submount and the lead electrode, it is also possible to provide a fixing portion made of an insulating adhesive or the like. On this occasion,
Providing a fixing portion made of an insulating material in the package portion exposed between the lead electrodes can prevent a short circuit or the like due to the conductive adhesive placed on both lead electrodes flowing out.

(Sealing member)
In the embodiment of the present invention, after the light emitting element is placed on the submount, at least a part of the light emitting element can be covered with a sealing member as shown in FIG. Such a sealing member protects the light emitting element and also has a function as an adhesive for fixing the submount and the light emitting element. The light emitting element and the submount can be bonded only with the first bonding member, but when stronger adhesiveness is required, the sealing member is provided so as to cover the light emitting element and its periphery, thereby providing adhesion. Can be improved. In the present invention, if a through hole is provided and formed so as to continue to the inside, the area in contact with the submount increases,
Since it can contact | connect three-dimensionally, since strong adhesive force is obtained, it is preferable.

As a material used as the sealing member, a material including a light reflecting member that reflects light from the light emitting element or a light transmitting member that can transmit light can be used, and cured by heat or light. Possible resins can be used. In the case of using a sealing member including a light reflecting member, the sealing member is not provided on the upper surface of the light emitting element, and is provided so as to be continuous with the through hole from the side surface of the element. By providing the sealing member including the light reflecting member on the side surface of the light emitting element, light can be emitted only from the upper surface of the light emitting element. Since the resin used as the sealing member may be easily deteriorated depending on the wavelength of light emitted from the light emitting element, the deterioration can be suppressed by using the sealing member including the light reflecting member only on the side surface. . If the resin deteriorates and yellows, it absorbs light and the light emission efficiency decreases. However, such problems can also be avoided by suppressing the deterioration.

Further, when a sealing member including a light reflecting member is used as shown in FIG. 8, it is possible to prevent light from being emitted to the submount side by providing not only on the side surface of the light emitting element but also on the bottom surface. . A first conductive member is provided between the submount and the light emitting element. When there is a gap, it is preferable to provide a light reflecting member so as to fill the gap. Since the distance between the bottom surface of the light emitting element and the submount is short, when light is emitted from the bottom of the light emitting element, the resin is likely to deteriorate due to repeated reflection, so a sealing member including a light reflecting member is used. Such deterioration can be prevented. In this case, a sealing member including a light reflecting member is provided so as to be continuous from the side surface of the light emitting element, and further provided so as to be continuous to the through hole, thereby improving adhesiveness with the submount and improving light extraction efficiency. Can be made. In addition, the light extraction efficiency can be improved by providing the light emitting element so as to continue from the bottom to the through hole.

As the light reflecting member, it is preferable to use at least one selected from the group consisting of silicon oxide, barium titanate, titanium oxide, and aluminum oxide. Particles made of these members can be used as a light reflecting member mixed in a sealing member.

In the case of using a translucent member, since it can be continuously provided from the upper surface of the light emitting element to the through hole, a stronger adhesive force can be obtained. And the sealing member which has both the above light reflection members and a translucent member is used, for example, a light reflection member is provided only in the side surface of a light emitting element like FIG. May be formed so as to reach the through hole from the upper surface of the light emitting element. As described above, the through hole may be filled with a translucent member or a light reflecting member, and if it is provided continuously from at least the side surface of the light emitting element, the effect of improving the adhesive force. Is obtained.

When using a translucent member as shown in FIG. 7, you may mix the light-diffusion material which diffuses light. Thereby, the dispersibility of light improves and it can be set as a uniform light-emitting device. Further, a fluorescent material that is excited by light from the light emitting element and can emit light having a wavelength longer than that wavelength may be mixed. Thereby, since mixed color light of light from the light emitting element and light from the fluorescent material can be emitted, a light emitting device having various emission wavelengths can be obtained. The fluorescent material can be contained in a resin that seals the concave portion after the submount on which the light emitting element is placed is arranged in the concave portion of the package, but this reduces the amount of the fluorescent material used. Further, since it can be mixed uniformly, luminance unevenness and the like can be prevented.

The sealing member only needs to be continuous from at least the side surface of the light emitting element to the through hole,
Furthermore, even if it continues to the lower surface, it may be formed so as to continue through a part of the side surface of the through hole. Further, a space for the second bonding member can be provided and sealed so that the second bonding member can be provided up to the inside of the through hole. Such a sealing member can be provided by potting, or can be provided by a method such as printing application after the upper surface of the light emitting element is protected with a mask or the like.

(Fluorescent substance)
The fluorescent substance that can be used in the present invention may be an inorganic fluorescent substance or an organic fluorescent substance as long as it is excited by the emission wavelength emitted from the light emitting element and can emit visible light having a longer wavelength than the light. The emission color of all visible light from purple to red can be applied. Specifically, examples of inorganic phosphors include silicate phosphors, phosphate phosphors, aluminate phosphors, rare earth phosphors, rare earth acid phosphors, and zinc sulfide phosphors. . Specifically, in a green light emitting phosphor, Y ₂ SiO ₅ : Ce
, Tb, MgAl ₁₁ O ₁₉ : Ce, Tb, BaMg ₂ Al ₁₆ O ₂₇ : Mn,
(Zn, Cd) S: Ag, ZnS: Au, Cu, Al, ZnS: Cu, Al, S
rAl ₂ O _4: Eu, a blue light emitting phosphor _{(SrCaBa) 5 (PO 4)} 3 C
l: Eu, (BaCa) ₅ (PO ₄ ) ₃ Cl: Eu, BaMg ₂ Al ₁₆ O ₂₇
: Eu, Sr ₅ (PO ₄ ) ₃ Cl: Eu, Sr ₂ P ₂ O ₇ : Eu, ZnS: Ag
Al, ZnS: Ag, Al (pigmented), ZnS: AgCl, Zn
S: AgCl (pigmented), Y ₂ O ₂ S: Eu for red light emitting phosphors
Y ₂ O ₂ S: Eu (pigmented), Y ₂ O ₃ : Eu, 3.5 MgO.
0.5MgF ₂ · GeO ₂ : Mn, Y (PV) O ₄ : Eu, 5MgO · 3Li ₂
O.Sb ₂ O ₅ : Mn, Mg ₂ TiO ₄ : Mn and the like can be mentioned. As for those having relatively high luminous efficiency, SrAl ₂ O ₄ : Eu is used for green light emitting phosphors, Sr ₅ (PO ₄ ) ₃ Cl: Eu is used for blue light emitting phosphors, and Y ₂ O ₂ is used for red light emitting phosphors. S:
Eu.

(Example 1)
A flat plate made of glass epoxy is used as the submount. A copper thin film is formed as a conductive member on the upper and lower surfaces of the flat plate by a method such as adhesion or lamination. Next, a negative film is attached to the flat plate, exposed, and removed by chemical etching or the like to form a copper thin film pattern as shown by the hatched portion in FIG.
This copper thin film forming plate is formed using a drill, etching, laser, or the like so that a plurality of through holes are arranged in the X direction and the Y direction as shown in FIG. Next, as shown in the cross-sectional view of FIG. 13C, the copper thin film is formed so as to continue from the upper surface to the lower surface through the through-holes. Thereby, although the through holes arranged in the X direction are provided to be continuous, a copper thin film is formed such that the glass epoxy resin is exposed away from each other on the upper surface and the lower surface. That is, the copper thin films with four through holes arranged in the X direction are continuous, and the copper thin films with two through holes arranged in the Y direction are formed without contact.

Next, as shown in FIG. 13D, the light emitting elements are arranged on the copper thin film so as to be in contact with both of the copper thin films formed between the through holes arranged in the Y direction and apart from each other. At this time,
A glass epoxy flat plate is placed on a heater heated to 100 ° C., and a gold bump is formed on the mounting portion of the light emitting element of the glass epoxy flat plate while applying a 1 W ultrasonic wave and a load of 60 gf by a bump bonder. Thereafter, the light emitting element is alloyed on the glass epoxy flat plate while applying heat, load and ultrasonic waves by a mounter.

Then potted on into the through hole as shown in FIG. 13 (f) a resin containing TiO ₂ as a light reflecting member. At this time, it is necessary to control the amount of the resin so that the TiO ₂ -containing resin does not cover the upper surface of the light emitting element. After the TiO ₂ -containing resin is cured, the flat plate is cut at the broken line portion of FIG. 13 (f) to form individual submounts on which the light emitting elements are mounted as shown in FIG. 13 (g). it can. The submount thus formed has a short side of 0.6 mm, a long side of 1.4 mm, and a thickness of 0.3 m.
The distance between the copper thin films on the upper surface of the submount is 0.08 mm. The distance between the electrodes of the mounted light emitting element is 0.1 mm.

Next, the lead electrode is placed in the insert-molded resin package. In the resin package, a metal plate made of a copper alloy metal with a thickness of 0.15 mm is formed by punching using a press to form a portion serving as a lead electrode, and a pair of positive and negative lead electrode portions formed in this way are placed in a mold. It is inserted and closed, and a resin is poured into the mold and cured. The resin package has a concave shape, and a part of the package is exposed between a pair of positive and negative lead electrodes and a lead of 0.15 mm. The copper thin film on the lower surface of the submount on which the light emitting element is mounted and each lead electrode are joined with silver paste so as to cross the positive and negative lead electrodes in such a package, and then the inside of the package recess is epoxy resin By sealing with, it can be set as the light-emitting device of this invention.

(Example 2)
In Example 1, the individual sub-units on which the light-emitting elements are mounted by cutting the light-emitting elements mounted by gold bumps on the glass epoxy resin flat plate on which the conductive member made of a copper thin film is formed. Split as a mount. Next, using a silver paste as the conductive bonding member, the submount was bonded to the lead electrode of the resin package. Since the conductive bonding member is cured after entering the inside of the through hole, the bonding between the submount and the lead electrode can be made strong. Next, the inside of the recess of the package is sealed with an epoxy resin. The epoxy resin contains 5% YAG with respect to the weight ratio. With such a structure, the light-emitting device of the present invention can be obtained.

Schematic perspective view showing a light emitting device of the present invention Schematic plan view showing a light emitting device of the present invention Schematic plan view showing another light emitting device of the present invention Typical sectional drawing which shows AA of FIG. Typical sectional drawing which shows the other light-emitting device of this invention. Typical sectional drawing which shows the other light-emitting device of this invention. Typical sectional drawing which shows the other light-emitting device of this invention. Typical sectional drawing which shows the other light-emitting device of this invention. Typical sectional drawing which shows the other light-emitting device of this invention. Schematic plan view showing another light emitting device of the present invention Typical sectional drawing which shows the other light-emitting device of this invention. Typical sectional drawing which shows the other light-emitting device of this invention. FIG. 6 is a process diagram illustrating a process for forming a light emitting device of the present invention. (A) Schematic diagram of the flat plate on which the conductive member is formed (b) Schematic diagram of the flat plate on which the through hole is formed (c) Cross-sectional view of FIG. 13 (b) (d) Schematic of the flat plate on which the light emitting element is arranged Fig. (E) Cross section of Fig. 13 (d) (f) Schematic diagram of substrate on which light reflecting member is formed (g) Cross section of Fig. 13 (f) Schematic plan view showing a light emitting device shown for comparison with the present invention Schematic sectional view showing AA in FIG.

Explanation of symbols

1. 1. Light emitting element 2. Submount 3. Conductive member 4. Lead electrode First joining member 6. Second joining member 7. Package 8 Wire 9. Through hole 10. Translucent member 11. Sealing member including light reflecting member

Claims (10)

A light-emitting device having a recess, a package formed by insert molding so that a pair of positive and negative lead electrodes is exposed on the bottom surface of the recess, and a light-emitting element mounted face-down on the lead electrode,
A submount capable of mounting the light emitting element is provided between the lead electrode and the light emitting element. The submount includes a conductive member on at least a surface, and the conductive member includes the light emitting element and the light emitting element. A light emitting device, wherein the light emitting device is electrically connected by a lead electrode and a conductive bonding member. The semiconductor light-emitting device according to claim 1, wherein the submount has a rectangular shape extending in a direction between the lead electrodes. The semiconductor light-emitting device according to claim 2, wherein the submount has a shorter side length longer than a diagonal line of the light-emitting element. 4. The semiconductor light emitting device according to claim 1, wherein the submount has an area at least twice as large as that of the light emitting element. The submount has a through-hole penetrating in the thickness direction, and the through-hole has a conductive member on the inner wall that is continuous with the conductive member on the upper surface and the lower surface of the submount. The semiconductor light-emitting device according to claim 1, wherein an upper surface and a lower surface of the submount are electrically connected. The semiconductor light emitting device according to claim 5, wherein a plurality of the through holes are formed. The central axis of the light emitting element coincides with the central axis of the submount, and the through hole is formed at a position symmetrical to the central axis in an outer peripheral portion of the light emitting element. Semiconductor light emitting device. The semiconductor light-emitting device according to claim 5, wherein the through hole has a cylindrical shape. The semiconductor light emitting device according to claim 5, wherein the adhesion portion is in contact with at least a part of an inner wall of the through hole. The semiconductor light-emitting device according to claim 1, wherein the submount is made of glass epoxy or BT resin.

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