JPH10163526A - Light-emitting element and light-emitting diode - Google Patents
Light-emitting element and light-emitting diodeInfo
- Publication number
- JPH10163526A JPH10163526A JP31597196A JP31597196A JPH10163526A JP H10163526 A JPH10163526 A JP H10163526A JP 31597196 A JP31597196 A JP 31597196A JP 31597196 A JP31597196 A JP 31597196A JP H10163526 A JPH10163526 A JP H10163526A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- light
- emitting element
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、単体で白色発光で
きる発光素子及びこの発光素子を用いた発光ダイオード
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device capable of emitting white light by itself and a light emitting diode using the light emitting device.
【０００２】[0002]
【従来の技術】近年、単一の発光素子を有し、単体で白
色発光できる発光ダイオードに対する需要が増進してい
る。2. Description of the Related Art In recent years, demand for a light emitting diode having a single light emitting element and capable of emitting white light by itself has been increasing.
【０００３】そして、白色発光する発光ダイオードを構
成できる技術として、特開平５−１５２６０９号公報記
載の第１技術と、特開平７−９９３４５号公報記載の第
２技術とが、知られている。As a technique capable of forming a light emitting diode that emits white light, there are known a first technique described in JP-A-5-152609 and a second technique described in JP-A-7-99345.
【０００４】[0004]
【発明が解決しようとする課題】このうち、第１技術で
は、窒化ガリウム系化合物半導体からなり、青色ないし
黄緑色に発光する発光素子を、樹脂モールドで包囲して
いる。また、発光素子によって励起されて蛍光を発する
蛍光物質を、この樹脂モールド中全体に、均等に存在さ
せたものである。According to the first technique, a light emitting element made of a gallium nitride-based compound semiconductor and emitting blue or yellow-green light is surrounded by a resin mold. Further, a fluorescent substance which emits fluorescence when excited by the light emitting element is uniformly present in the entire resin mold.
【０００５】しかしながら、このような構成では、発光
ダイオードを消灯させておきたい場合に、当該発光ダイ
オードに、外部光（例えば、当該発光ダイオードの周囲
にある別の発光ダイオードの光など）が入射すると、樹
脂モールド中の蛍光物質は、樹脂モールドの周辺部分に
も存在しているので、この蛍光物質が励起されて、意に
反する発光が起こってしまう。However, in such a configuration, when it is desired to turn off the light emitting diode, when external light (for example, light of another light emitting diode around the light emitting diode) enters the light emitting diode, the light emitting diode is turned off. Since the fluorescent substance in the resin mold also exists in the peripheral portion of the resin mold, the fluorescent substance is excited, and unintended light emission occurs.
【０００６】また、第２技術では、上述と同種の発光素
子を用いている。そして、この発光素子が実装される基
板として、発光素子を収納できる凹部（カップ）を有す
るリードフレームを使用する。In the second technique, the same kind of light emitting element as described above is used. Then, a lead frame having a concave portion (cup) that can accommodate the light emitting element is used as a substrate on which the light emitting element is mounted.
【０００７】さらに、樹脂モールドを形成する前に、凹
部内の発光素子の上から、蛍光物質を含む第１の樹脂
を、ディスペンサなどを用いて塗布し、この第１の樹脂
を硬化させている。Further, before forming the resin mold, a first resin containing a fluorescent substance is applied from above the light emitting element in the concave portion using a dispenser or the like, and the first resin is cured. .
【０００８】しかる後、第１の樹脂を含めて、発光素子
及びリードフレームの周囲を樹脂モールドで包囲してい
る。After that, the periphery of the light emitting element and the lead frame including the first resin is surrounded by a resin mold.
【０００９】なるほど、このようにすれば、蛍光物質
は、発光ダイオードの中心付近（発光素子の周囲）のみ
に存在するから、外部光による不要な発光が発生しにく
いと思われる。In this case, since the fluorescent substance exists only in the vicinity of the center of the light emitting diode (around the light emitting element), unnecessary light emission by external light is unlikely to occur.
【００１０】しかしながら、基板として、凹部を有する
特別な種類のものを採用せざるを得ない。その理由は、
次のようになる。However, a special type of substrate having a concave portion must be used as the substrate. The reason is,
It looks like this:
【００１１】第１の樹脂は、塗布時に、流動性を有して
いる。したがって、少なくとも第１の樹脂が硬化するま
では、塗布された第１の樹脂を塗布された量のまま、発
光素子の近傍から外れないように、凹部で保持する必要
があるからである。The first resin has fluidity when applied. Therefore, at least until the first resin is cured, it is necessary to hold the applied first resin in the recess in the applied amount so as not to come off from the vicinity of the light emitting element.
【００１２】したがって、この発光ダイオードは、使用
できる基板の品種が限定されてしまい、幅広い用途に対
応することができない。Therefore, this light emitting diode is limited in the types of substrates that can be used, and cannot be used for a wide range of applications.
【００１３】加えて、第１の樹脂は、ディスペンサなど
で塗布されるのであるから、塗布量のコントロールが難
しく、発光素子の発する光と蛍光物質の量とがアンバラ
ンスになることもある。したがって、発光ダイオードか
ら放出される光が、予定する白色から他の色にずれやす
い。In addition, since the first resin is applied with a dispenser or the like, it is difficult to control the applied amount, and the light emitted from the light emitting element and the amount of the fluorescent substance may be unbalanced. Therefore, the light emitted from the light emitting diode is likely to shift from the expected white to another color.
【００１４】そこで本発明は、幅広い用途に対応でき、
しかも単体で白色からの色ずれが少ない発光素子及びそ
れを用いた発光ダイオードを提供することを目的とす
る。Therefore, the present invention can be applied to a wide range of applications,
In addition, it is an object of the present invention to provide a light emitting element having a small color shift from white and a light emitting diode using the same.
【００１５】[0015]
【課題を解決するための手段】本発明の発光素子は、窒
化ガリウム系化合物半導体と、窒化ガリウム系化合物半
導体の上面または下面の一方に形成されるｐ電極及びｎ
電極と、ｐ電極及びｎ電極が外部に露呈するように窒化
ガリウム系化合物半導体と一体的に形成され、かつ窒化
ガリウム系化合物半導体が発する光に対して補色の関係
にある光を発する蛍光物質を含む蛍光膜層とを備えてい
る。According to the present invention, there is provided a light emitting device comprising a gallium nitride-based compound semiconductor, a p-electrode formed on one of an upper surface and a lower surface of the gallium nitride-based compound semiconductor, and an n-type electrode.
The electrode, the p-electrode and the n-electrode are formed integrally with the gallium nitride-based compound semiconductor so as to be exposed to the outside, and a fluorescent substance that emits light having a complementary color to the light emitted by the gallium nitride-based compound semiconductor is used. And a fluorescent film layer containing the same.
【００１６】また本発明の発光ダイオードは、発光素子
と、発光素子が搭載されるとともに、ｐ電極とｎ電極が
電気的に接続される基板と、基板と発光素子を包囲する
樹脂ケースとを有する。Further, the light emitting diode of the present invention has a light emitting element, a substrate on which the light emitting element is mounted, and a p electrode and an n electrode are electrically connected, and a resin case surrounding the substrate and the light emitting element. .
【００１７】[0017]
【発明の実施の形態】請求項１記載の発光素子は、窒化
ガリウム系化合物半導体と、窒化ガリウム系化合物半導
体の上面または下面の一方に形成されるｐ電極及びｎ電
極と、ｐ電極及びｎ電極が外部に露呈するように窒化ガ
リウム系化合物半導体と一体的に形成され、かつ窒化ガ
リウム系化合物半導体が発する光に対して補色の関係に
ある光を発する蛍光物質を含む蛍光膜層とを備えてい
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A light emitting device according to a first aspect of the present invention comprises a gallium nitride compound semiconductor, a p electrode and an n electrode formed on one of the upper and lower surfaces of the gallium nitride compound semiconductor, a p electrode and an n electrode. And a phosphor film layer containing a fluorescent substance that emits light having a complementary color to light emitted by the gallium nitride-based compound semiconductor, and is formed integrally with the gallium nitride-based compound semiconductor so as to be exposed to the outside. I have.
【００１８】また請求項５記載の発光ダイオードは、こ
の発光素子と、発光素子が搭載されるとともに、ｐ電極
とｎ電極が電気的に接続される基板と、基板と発光素子
を包囲する樹脂ケースとを有する。According to a fifth aspect of the present invention, there is provided a light emitting diode, a light emitting element, a substrate on which the light emitting element is mounted, and a p electrode and an n electrode electrically connected, and a resin case surrounding the substrate and the light emitting element. And
【００１９】したがって、発光素子自身を形成する、エ
ピ成長工程と電極形成工程とからなる一連のプロセス中
で、蛍光膜層を、発光素子と一体的に構成することがで
きる。即ち、発光素子の周囲に存在する蛍光物質の量
を、容易かつ正確に制御でき、発光素子単体だけで正確
な白色の発光を行える。Therefore, the phosphor film layer can be integrally formed with the light emitting element in a series of processes for forming the light emitting element itself, which includes the epi growth step and the electrode forming step. That is, the amount of the fluorescent substance present around the light emitting element can be easily and accurately controlled, and accurate white light emission can be performed only by the light emitting element alone.
【００２０】また、蛍光膜層はこの一連のプロセス中で
形成できるから、蛍光膜層の外面をフラットにすること
も容易である。Further, since the fluorescent film layer can be formed in this series of processes, it is easy to make the outer surface of the fluorescent film layer flat.
【００２１】したがって、基板に発光素子を実装した後
に、流動性を有する樹脂（蛍光物質を含有する）を塗布
したり、この樹脂を保持したりする必要はない。このた
め、発光素子が実装される基板は、凹部なしでも差し支
えなく、品種を選ばない。Therefore, after mounting the light emitting element on the substrate, it is not necessary to apply a fluid resin (containing a fluorescent substance) or to hold the resin. For this reason, the substrate on which the light emitting element is mounted may be without a concave portion, and the type is not limited.
【００２２】そして、この発光素子を形成できたら、基
板に搭載して必要な接続を行い、樹脂ケースで包囲すれ
ばよい。このプロセスは、赤色や黄緑色の発光ダイオー
ドと同様に、特別な樹脂の塗布などを行わずに完了でき
る。Then, when this light emitting element can be formed, the light emitting element can be mounted on a substrate to make necessary connections, and can be surrounded by a resin case. This process can be completed without any special resin application or the like, like the red and yellow-green light emitting diodes.
【００２３】次に図面を参照しながら、本発明の実施の
形態について説明する。まず、図１、図２を用いて、発
光素子Ｃの製造プロセスを説明する。Next, an embodiment of the present invention will be described with reference to the drawings. First, the manufacturing process of the light emitting element C will be described with reference to FIGS.
【００２４】はじめに、エピ成長工程を行う。即ち、サ
ファイア基板１の上面に、ＧａＮバッファ層２を形成す
る。さらに、ｎ型ＧａＮ層３、ＩｎＧａＮ活性層４、ｐ
型ＡｌＧａＮ層５、ｐ型ＧａＮ層６を順に積層してゆ
き、ダブルヘテロ構造を構成する。First, an epi growth step is performed. That is, the GaN buffer layer 2 is formed on the upper surface of the sapphire substrate 1. Further, an n-type GaN layer 3, an InGaN active layer 4,
The type AlGaN layer 5 and the p-type GaN layer 6 are sequentially stacked to form a double hetero structure.
【００２５】次に、フォトリソグラフィーやスパッタリ
ングなどによる電極形成工程を行う。Next, an electrode forming step by photolithography or sputtering is performed.
【００２６】まず、ｎ型ＧａＮ層３、ＩｎＧａＮ活性層
４、ｐ型ＡｌＧａＮ層５、ｐ型ＧａＮ層６をエッチング
して、ｎ型ＧａＮ層３とｐ型ＧａＮ層６を上方に露呈さ
せる。First, the n-type GaN layer 3, the InGaN active layer 4, the p-type AlGaN layer 5, and the p-type GaN layer 6 are etched to expose the n-type GaN layer 3 and the p-type GaN layer 6 upward.
【００２７】そして、ｎ型ＧａＮ層３上にｎ電極７を形
成し、ｐ型ＧａＮ層６上にｐ電極９を形成する。なお本
形態では、ｎ電極７とｐ電極９とは、発光素子Ｃの上面
側に位置している。また、ｎ電極７をＴｉとＡｌから、
ｐ電極９をＮｉとＡｕから構成した。このようにする
と、ワイヤボンディング中の接合性が良好となる。Then, an n-electrode 7 is formed on the n-type GaN layer 3, and a p-electrode 9 is formed on the p-type GaN layer 6. In this embodiment, the n-electrode 7 and the p-electrode 9 are located on the upper surface of the light-emitting element C. The n-electrode 7 is made of Ti and Al.
The p electrode 9 was composed of Ni and Au. By doing so, the bondability during wire bonding is improved.
【００２８】勿論、発光素子Ｃと基板との接続は、ワイ
ヤボンディング法に限定されるものではなく、バンプ法
など他の工法によってもよい。Of course, the connection between the light emitting element C and the substrate is not limited to the wire bonding method, but may be another method such as a bump method.
【００２９】さらに、この電極形成工程中で、次のよう
に、蛍光膜層を形成する。即ち、サファイア基板１の下
面上に第１蛍光膜層１０を形成し、ｐ型ＧａＮ層６とｎ
型ＧａＮ層３との上に第２蛍光膜層１１を形成する。そ
して、適当なレジストなどを用いて、図１に示すよう
に、ｎ電極７とｐ電極９とが外部に露呈するようにす
る。Further, during this electrode forming step, a fluorescent film layer is formed as follows. That is, the first fluorescent film layer 10 is formed on the lower surface of the sapphire substrate 1, and the p-type GaN layer 6 and the n-type
The second fluorescent film layer 11 is formed on the GaN layer 3. Then, using an appropriate resist or the like, the n-electrode 7 and the p-electrode 9 are exposed to the outside as shown in FIG.
【００３０】これら蛍光膜層１０、１１は、片方のみ形
成してもよいし、両方形成してもよい。どのように構成
するかは、発光素子Ｃとしての発光色（白色）のバラン
スを考慮して決定する。勿論、第１蛍光膜層１０のみを
形成する方が、両電極７、９を露呈させるために蛍光膜
の除去を行う必要がないから、より好ましい。The fluorescent film layers 10 and 11 may be formed only on one side or on both sides. The configuration is determined in consideration of the balance of the emission color (white) as the light emitting element C. Of course, it is more preferable to form only the first fluorescent film layer 10 because it is not necessary to remove the fluorescent film in order to expose the electrodes 7 and 9.
【００３１】これら蛍光膜層１０、１１は、エポキシ樹
脂またはポリイミドなどの透光性のバインダーを主材と
し、主材中には、蛍光膜層が無い状態での発光素子Ｃの
発光色（青色）に対して補色の関係にある蛍光色を呈す
る蛍光物質が、一定の分布になるように分散している。Each of the fluorescent film layers 10 and 11 is mainly composed of a translucent binder such as epoxy resin or polyimide, and the main material has a light emission color (blue) of the light emitting element C in the absence of the fluorescent film layer. ), Fluorescent substances exhibiting fluorescent colors that are complementary to each other are dispersed so as to have a constant distribution.
【００３２】そして、これら蛍光膜層１０、１１は、ス
ピナーで塗布して硬化させるものである。したがって、
ディスペンサなどで滴下するような場合と比べると、量
のコントロールが格段に容易であって、厚さＨ１、Ｈ２
を正確に規定できる。このため、蛍光物質の量と、蛍光
膜層がない状態での発光素子Ｃの発色とのバランスを厳
格にとることができ、発光素子Ｃ単体で色ずれが少なく
正確な白色発光ができる。The fluorescent film layers 10 and 11 are applied by a spinner and cured. Therefore,
Compared to the case of dropping with a dispenser or the like, the control of the amount is much easier, and the thickness H1, H2
Can be defined accurately. For this reason, the amount of the fluorescent substance and the color development of the light emitting element C without the fluorescent film layer can be strictly balanced, and the light emitting element C alone can emit accurate white light with little color shift.
【００３３】また、厚さＨ１、Ｈ２が正確であり、第１
蛍光膜層１０の下面（発光素子Ｃの外面）をフラットに
できる。したがって、どのような基板であっても、簡単
に実装でき、広範な用途に対応できる。The thicknesses H1 and H2 are accurate, and the first
The lower surface of phosphor layer 10 (the outer surface of light emitting element C) can be made flat. Therefore, it can be easily mounted on any substrate and can be used in a wide range of applications.
【００３４】例えば、図３（ａ）のように、プリント基
板に表面実装されるチップ型発光ダイオードの基板１２
（凹凸が無く平坦）にも実装できる。また、図３（ｂ）
のように、砲弾型発光ダイオードに頻繁に用いられるカ
ップ（凹部）１４を備えた基板としてのリードフレーム
にも実装できる。なお、１５はカップ１４に対面する他
方のリードである。For example, as shown in FIG. 3A, a substrate 12 of a chip type light emitting diode which is surface-mounted on a printed circuit board.
(Flat without irregularities). FIG. 3 (b)
As described above, the present invention can also be mounted on a lead frame as a substrate having a cup (recess) 14 frequently used for a bullet-type light emitting diode. In addition, 15 is the other lead facing the cup 14.
【００３５】このように基板１２、１３に発光素子Ｃを
搭載したら、ｐ電極９とｎ電極７を基板１２に電気的に
接続する。そして、通常の発光ダイオード（チップ型ま
たは砲弾型）と同様に、蛍光物質を含む樹脂の塗布など
を行うことなく、基板１２、１３と発光素子Ｃを透光性
を備えた樹脂ケースで包囲して、白色の発光ダイオード
とするものである。After the light emitting element C is mounted on the substrates 12 and 13 as described above, the p electrode 9 and the n electrode 7 are electrically connected to the substrate 12. Then, similarly to a normal light emitting diode (chip type or shell type), the substrates 12, 13 and the light emitting element C are surrounded by a resin case having a light transmitting property without applying a resin containing a fluorescent substance. And a white light emitting diode.
【００３６】次に、図４及び図５を用いて、本発明の代
替技術を紹介する。このものは、図２において、蛍光膜
層１０、１１がない発光素子Ｃ（単なる青色の発光素
子）しか入手できないときに好適である。Next, an alternative technique of the present invention will be introduced with reference to FIGS. This is suitable when only the light-emitting device C without the fluorescent film layers 10 and 11 (mere blue light-emitting device) can be obtained in FIG.
【００３７】図４には、チップ型発光ダイオードに関す
る技術を示している。即ち、図４（ａ）に示すように、
治具１６に複数のポケット１７を設け、それぞれのポケ
ット１７に青色の発光素子を収納した矩形の樹脂ケース
１８をセットする。FIG. 4 shows a technique relating to a chip type light emitting diode. That is, as shown in FIG.
A plurality of pockets 17 are provided in the jig 16, and a rectangular resin case 18 containing a blue light emitting element is set in each pocket 17.
【００３８】次に、樹脂ケース１８の上面に位置するパ
ターン孔１９を備えたマスク２０を治具１６上に重ね
る。そして、マスク２０上で、スキージ２１を矢印Ｎ１
方向にスライドさせ、パターン孔１９を介して上述の蛍
光膜層１０、１１と同様の樹脂２２を樹脂ケース１８の
上面に塗布する。Next, a mask 20 having a pattern hole 19 located on the upper surface of the resin case 18 is overlaid on the jig 16. Then, on the mask 20, the squeegee 21 is moved to the arrow N1.
The resin 22 similar to the above-described fluorescent film layers 10 and 11 is applied to the upper surface of the resin case 18 through the pattern holes 19.
【００３９】このようにスクリーン印刷法によってお
り、パターン孔１９の平面形状と厚さは一定であるか
ら、ディスペンサで樹脂２２を滴下するよりも、正確な
量だけ樹脂２２を塗布できる。As described above, since the planar shape and the thickness of the pattern holes 19 are constant by the screen printing method, the resin 22 can be applied in a more precise amount than when the resin 22 is dropped with a dispenser.
【００４０】そして、塗布が済んだら、樹脂２２を硬化
させて、図４（ｂ）に示すように、樹脂ケース１８の上
面上に、樹脂２２の層を形成するものである。After the application, the resin 22 is cured to form a layer of the resin 22 on the upper surface of the resin case 18 as shown in FIG. 4B.
【００４１】このようにすれば、樹脂ケース１８をプリ
ント基板上に表面実装することができ、見かけ上白色発
光するチップ型発光ダイオードとして使用できる。In this manner, the resin case 18 can be surface-mounted on a printed circuit board, and can be used as a chip-type light emitting diode that emits white light in appearance.
【００４２】図５には、砲弾型発光ダイオードに関する
技術を示している。この例では、図５（ａ）に示すよう
に、樹脂２２と同様の樹脂を用いてすり鉢状のキャップ
２３を形成しておく。FIG. 5 shows a technique relating to a shell type light emitting diode. In this example, as shown in FIG. 5A, a mortar-shaped cap 23 is formed using the same resin as the resin 22.
【００４３】そして、このキャップ２３を図示している
ように、天地逆転した状態で保持し、キャップ２３内に
透光性を有する充填樹脂２４を流し込む。Then, as shown in the figure, the cap 23 is held upside down, and a translucent filling resin 24 is poured into the cap 23.
【００４４】一方、図５（ｂ）のように、単なる青色の
発光素子Ｄをリードフレームに搭載して電気的に接続し
ておく。On the other hand, as shown in FIG. 5B, a simple blue light emitting element D is mounted on a lead frame and is electrically connected.
【００４５】そして、硬化する前の充填樹脂２４の中に
発光素子Ｄなどを入れ、硬化させて砲弾型発光ダイオー
ドとするものである（図５（ｃ））。なお、キャップ２
３は充填樹脂２４の硬化後、樹脂ケースを構成すること
となる。Then, the light emitting element D and the like are put in the filling resin 24 before being cured, and are cured to form a shell type light emitting diode (FIG. 5C). In addition, cap 2
Reference numeral 3 indicates that the resin case is formed after the filling resin 24 is cured.
【００４６】このようにすれば、砲弾型発光ダイオード
のリードを回路基板に挿入し半田付けすることができ、
見かけ上白色発光する砲弾型発光ダイオードとして使用
できる。In this way, the lead of the bullet type light emitting diode can be inserted into the circuit board and soldered,
It can be used as a shell-type light emitting diode that emits white light in appearance.
【００４７】[0047]
【発明の効果】本発明は、以上のように構成したので、
砲弾型やチップ型など幅広い用途に対応でき、単体で正
確な白色で発光する発光素子が得られるし、外部光に影
響されにくい発光ダイオードを容易に構成できる。The present invention is configured as described above.
It can be used for a wide range of uses such as shell type and chip type. A light emitting element that emits accurate white light can be obtained by itself, and a light emitting diode that is not easily affected by external light can be easily configured.
【図１】本発明の一実施の形態における発光素子の平面
図FIG. 1 is a plan view of a light-emitting element according to one embodiment of the present invention.
【図２】図１のＡ−Ａ断面図FIG. 2 is a sectional view taken along line AA of FIG. 1;
【図３】（ａ）本発明の一実施の形態における発光素子
の実装状態説明図 （ｂ）本発明の一実施の形態における発光素子の実装状
態説明図3A is a diagram illustrating a mounting state of a light emitting element according to an embodiment of the present invention; FIG. 3B is a diagram illustrating a mounting state of a light emitting element according to an embodiment of the present invention;
【図４】（ａ）本発明の一実施の形態における発光ダイ
オードの製造工程説明図 （ｂ）本発明の一実施の形態における発光ダイオードの
製造工程説明図FIG. 4A is a diagram illustrating a manufacturing process of a light emitting diode according to an embodiment of the present invention; and FIG. 4B is a diagram illustrating a manufacturing process of a light emitting diode according to an embodiment of the present invention.
【図５】（ａ）本発明の一実施の形態における発光ダイ
オードの製造工程説明図 （ｂ）本発明の一実施の形態における発光ダイオードの
製造工程説明図 （ｃ）本発明の一実施の形態における発光ダイオードの
製造工程説明図5A is a diagram illustrating a manufacturing process of a light-emitting diode according to an embodiment of the present invention. FIG. 5B is a diagram illustrating a manufacturing process of a light-emitting diode according to an embodiment of the present invention. Diagram for manufacturing process of light emitting diode in
Ｃ 発光素子 ７ ｎ電極 ９ ｐ電極 １０ 第１蛍光膜層 １１ 第２蛍光膜層 C light emitting element 7 n-electrode 9 p-electrode 10 first fluorescent film layer 11 second fluorescent film layer
Claims (7)
ガリウム系化合物半導体の上面または下面の一方に形成
されるｐ電極及びｎ電極と、前記ｐ電極及びｎ電極が外
部に露呈するように前記窒化ガリウム系化合物半導体と
一体的に形成され、かつ前記窒化ガリウム系化合物半導
体が発する光に対して補色の関係にある光を発する蛍光
物質を含む蛍光膜層とを備えたことを特徴とする発光素
子。A gallium nitride-based compound semiconductor; a p-electrode and an n-electrode formed on one of an upper surface and a lower surface of the gallium nitride-based compound semiconductor; and the nitride such that the p-electrode and the n-electrode are exposed to the outside. A light-emitting element comprising: a phosphor film layer formed integrally with the gallium-based compound semiconductor and containing a phosphor emitting light having a complementary color to light emitted by the gallium nitride-based compound semiconductor. .
前記蛍光物質を均一に分布させ、硬化させて形成されて
いることを特徴とする請求項１記載の発光素子。2. The light emitting device according to claim 1, wherein said fluorescent film layer is formed by uniformly dispersing and curing said fluorescent substance in a resin having translucency.
形成する電極形成工程中に形成されることを特徴とする
請求項１記載の発光素子。3. The light emitting device according to claim 1, wherein said phosphor film layer is formed during an electrode forming step for forming said p electrode and n electrode.
物半導体の上面または下面の一方あるいは双方に形成さ
れていることを特徴とする請求項１記載の発光素子。4. The light emitting device according to claim 1, wherein said fluorescent film layer is formed on one or both of an upper surface and a lower surface of said gallium nitride-based compound semiconductor.
ガリウム系化合物半導体の上面または下面の一方に形成
されるｐ電極及びｎ電極と、前記ｐ電極及びｎ電極が外
部に露呈するように前記窒化ガリウム系化合物半導体と
一体的に形成され、かつ前記窒化ガリウム系化合物半導
体が発する光に対して補色の関係にある光を発する蛍光
物質を含む蛍光膜層とを備えた発光素子と、 前記発光素子が搭載されるとともに、前記ｐ電極と前記
ｎ電極が電気的に接続される基板と、 前記基板と前記発光素子を包囲する樹脂ケースとを有す
ることを特徴とする発光ダイオード。5. A gallium nitride-based compound semiconductor, a p-electrode and an n-electrode formed on one of an upper surface and a lower surface of the gallium nitride-based compound semiconductor, and the nitrided electrode such that the p-electrode and the n-electrode are exposed to the outside. A light-emitting element integrally formed with the gallium-based compound semiconductor and having a fluorescent film layer containing a fluorescent substance that emits light having a complementary color to light emitted by the gallium nitride-based compound semiconductor; and A light emitting diode, comprising: a substrate on which the p electrode and the n electrode are electrically connected; and a resin case surrounding the substrate and the light emitting element.
前記樹脂ケースは表面実装用であることを特徴とする請
求項５記載の発光ダイオード。6. The substrate is a flat substrate having no irregularities.
The light emitting diode according to claim 5, wherein the resin case is for surface mounting.
凹部を備えたリードフレームであり、前記樹脂ケースは
砲弾状の形状をなすことを特徴とする請求項５記載の発
光ダイオード。7. The light emitting diode according to claim 5, wherein said substrate is a lead frame provided with a concave portion for mounting said light emitting element, and said resin case has a shell shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31597196A JPH10163526A (en) | 1996-11-27 | 1996-11-27 | Light-emitting element and light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31597196A JPH10163526A (en) | 1996-11-27 | 1996-11-27 | Light-emitting element and light-emitting diode |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006007091A Division JP2006108719A (en) | 2006-01-16 | 2006-01-16 | Light emitting element |
| JP2006007090A Division JP3888387B2 (en) | 2006-01-16 | 2006-01-16 | Manufacturing method of light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10163526A true JPH10163526A (en) | 1998-06-19 |
Family
ID=18071792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31597196A Withdrawn JPH10163526A (en) | 1996-11-27 | 1996-11-27 | Light-emitting element and light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10163526A (en) |
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| JPH10321906A (en) * | 1997-05-16 | 1998-12-04 | Seiwa Electric Mfg Co Ltd | Light-emitting diode and display device using the same |
| JP2000174346A (en) * | 1998-12-01 | 2000-06-23 | Mitsubishi Cable Ind Ltd | Light-emitting device |
| WO2000038250A1 (en) * | 1998-12-22 | 2000-06-29 | Honeywell Inc. | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
| WO2001024283A1 (en) * | 1999-09-27 | 2001-04-05 | Lumileds Lighting, U.S., Llc | Light emitting diode comprising a thin phosphor-conversion film |
| WO2000060381A3 (en) * | 1999-03-01 | 2001-04-12 | Matsushita Electric Corp | Flat panel solid state light source |
| JP2001298216A (en) * | 2000-04-12 | 2001-10-26 | Matsushita Electric Ind Co Ltd | Surface-mounting semiconductor light-emitting device |
| EP1150361A1 (en) * | 2000-04-24 | 2001-10-31 | LumiLeds Lighting U.S., LLC | A light emitting diode device that emits white light |
| WO2002029906A3 (en) * | 2000-10-04 | 2002-07-25 | Lighthouse Technologies Ltd | Led with embedded conversion layer |
| US6696704B1 (en) | 1999-01-11 | 2004-02-24 | Matsushita Electric Industrial Co., Ltd. | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit |
| US6914267B2 (en) | 1999-06-23 | 2005-07-05 | Citizen Electronics Co. Ltd. | Light emitting diode |
| JP2006013551A (en) * | 2002-03-25 | 2006-01-12 | Sanyo Electric Co Ltd | Semiconductor laser apparatus |
| JP2006108662A (en) * | 2004-09-30 | 2006-04-20 | Osram Opto Semiconductors Gmbh | Luminescence diode chip having converter layer, and method of manufacturing the same |
| JP2007180111A (en) * | 2005-12-27 | 2007-07-12 | Showa Denko Kk | Light-emitting device |
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| JPH10321906A (en) * | 1997-05-16 | 1998-12-04 | Seiwa Electric Mfg Co Ltd | Light-emitting diode and display device using the same |
| JP2000174346A (en) * | 1998-12-01 | 2000-06-23 | Mitsubishi Cable Ind Ltd | Light-emitting device |
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| JP2001298216A (en) * | 2000-04-12 | 2001-10-26 | Matsushita Electric Ind Co Ltd | Surface-mounting semiconductor light-emitting device |
| EP1150361A1 (en) * | 2000-04-24 | 2001-10-31 | LumiLeds Lighting U.S., LLC | A light emitting diode device that emits white light |
| WO2002029906A3 (en) * | 2000-10-04 | 2002-07-25 | Lighthouse Technologies Ltd | Led with embedded conversion layer |
| JP2006013551A (en) * | 2002-03-25 | 2006-01-12 | Sanyo Electric Co Ltd | Semiconductor laser apparatus |
| US7889770B2 (en) | 2002-03-25 | 2011-02-15 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
| US7280572B2 (en) | 2002-03-25 | 2007-10-09 | Sanyo Electric Co., Ltd. | Semiconductor laser beam device |
| JP2006108662A (en) * | 2004-09-30 | 2006-04-20 | Osram Opto Semiconductors Gmbh | Luminescence diode chip having converter layer, and method of manufacturing the same |
| JP2007180111A (en) * | 2005-12-27 | 2007-07-12 | Showa Denko Kk | Light-emitting device |
| JP2007273989A (en) * | 2006-03-31 | 2007-10-18 | Samsung Electro-Mechanics Co Ltd | White light-emitting element |
| JP2007324630A (en) * | 2007-09-10 | 2007-12-13 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device |
| JP2009130360A (en) * | 2007-11-19 | 2009-06-11 | Iljin Semiconductor Co Ltd | White light-emitting diode chip and method of manufacturing the same |
| JP2013140964A (en) * | 2011-12-28 | 2013-07-18 | Led Engin Inc | Accumulation of phosphor on upper part of die using dry film photoresist |
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