CN104934521B - Semiconductor light-emitting elements and its light-emitting device - Google Patents
Semiconductor light-emitting elements and its light-emitting device Download PDFInfo
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- CN104934521B CN104934521B CN201510114780.7A CN201510114780A CN104934521B CN 104934521 B CN104934521 B CN 104934521B CN 201510114780 A CN201510114780 A CN 201510114780A CN 104934521 B CN104934521 B CN 104934521B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Abstract
Present invention is disclosed a kind of semiconductor light-emitting elements and its light-emitting device, semiconductor light-emitting elements include transparent substrates, LED structure and optical unit, which has the supporting surface being oppositely arranged and the second main surface；The LED structure is arranged in the supporting surface, and the formation of Chong Die with not with LED structure at least partly supporting surface can light extraction the first main surface；The optical unit is arranged in first main surface, and includes covering side and corresponding smooth radiation side, and wherein the covering side is towards the transparent substrates；The optical unit also includes an at least optical texture, is arranged in the light radiation side, at least part of the received light in covering side is diffused to different directions according to the wavelength of light.The semiconductor light-emitting elements of the present invention can reach polytropism light extraction, mixed light and the illumination effect of dispersion.
Description
Technical field
A kind of semiconductor light-emitting elements of present invention offer and its light-emitting device, it is espespecially a kind of to provide the half of polytropism light source
Conductor light-emitting component and light-emitting device with such semiconductor light-emitting elements.
Background technology
The light that light-emitting diode (light emitting diode, LED) itself is issued is a kind of light of directive property
Source, not if conventional bulb is a kind of light source of divergence form.Therefore, light-emitting diode can be above restricted in application.Citing and
Speech, Conventional luminescent diode can not or be difficult to reach required illumination effect in the illumination application of general indoor/outdoor.Separately
Outside, the light-emitting device of Conventional luminescent diode only can single side shine, therefore its luminous efficiency (luminance efficiency)
The light-emitting device of more traditional general indoor/outdoor illumination is low.
Invention content
The purpose of the present invention is to provide a kind of semiconductor light-emitting elements and its light-emitting devices.
One of for achieving the above object, the present invention provides a kind of semiconductor light-emitting elements, comprising transparent substrates, luminous
Diode structure and optical unit, transparent substrates have the supporting surface being oppositely arranged and the second main surface；Light-emitting diode knot
Structure is arranged in the supporting surface, and the formation of Chong Die with not with the LED structure at least partly supporting surface can light extraction the
One main surface, at least partly light which generates go out by the transparent substrates and from second main surface
Light；Optical unit setting includes covering side and light radiation side in first main surface, the optical unit, and the covering side is towards this
Transparent substrates, and the position of the light radiation side corresponds to the covering side；Wherein, which also includes an at least optics knot
Structure, setting is in the light radiation side, and the optical texture is according to the wavelength of light by least part of the received light in covering side
Diffuse to different directions.
As being further improved for an embodiment of the present invention, which also includes wavelength conversion layer, if
It sets between the optical unit and the transparent substrates, the surface on the covering side of the optical unit is parallel to the wavelength conversion layer
Corresponding surface.
As being further improved for an embodiment of the present invention, which also includes the first diverging portion and the second hair
The portion of dissipating is covered each by first main surface and second main surface of the transparent substrates.
As being further improved for an embodiment of the present invention, which also includes interconnecting piece, interconnecting piece connection
The first diverging portion and the second diverging portion.
As being further improved for an embodiment of the present invention, which has end of the surface towards the transparent substrates
Face, and the interconnecting piece has recess.
As being further improved for an embodiment of the present invention, the sectional plane of the recess of the interconnecting piece has angle 70
Spend the recess angle between 140 degree.
As being further improved for an embodiment of the present invention, the angle at the recess angle is equal or close to 90 degree.
As being further improved for an embodiment of the present invention, the interconnecting piece of the optical element includes an at least optics knot
Structure, which, which is arranged, is extending from the light radiation side in the first diverging portion or is extending from the light radiation side in the second diverging portion
The surface of formation.
As being further improved for an embodiment of the present invention, the sectional plane of the optical texture is similar or equal to triangle
Shape, and the triangle includes apex angle of the angle between 30 degree to 140 degree.
As being further improved for an embodiment of the present invention, the sectional plane of the optical texture is similar or equal to triangle
Shape, and the triangle includes apex angle of the angle between 50 degree to 140 degree.
As being further improved for an embodiment of the present invention, the angle of the apex angle is equal or close to 70 degree.
As being further improved for an embodiment of the present invention, the quantity of the optical texture is more than one, and those optics
Structure with array, be staggered or concentric arrangement setting.
As being further improved for an embodiment of the present invention, which includes lug boss.
As being further improved for an embodiment of the present invention, the radius of curvature of the lug boss 0.01 mm to 10 mm it
Between.
As being further improved for an embodiment of the present invention, the radius of curvature of the lug boss is equal or close to 3 mm.
As being further improved for an embodiment of the present invention, at least part of the optical unit is in direct contact the wavelength
Conversion layer.
As being further improved for an embodiment of the present invention, the covering side of the optical unit and the wavelength convert interlayer
Distance in 0 mm between 2 mm.
As being further improved for an embodiment of the present invention, the covering side of the optical unit and the wavelength convert interlayer
The distance be equal or close to 0.2 mm.
As being further improved for an embodiment of the present invention, between the interconnecting piece and the transparent substrates of the optical unit
Distance is in 0 mm between 2 mm.
As being further improved for an embodiment of the present invention, between the interconnecting piece and the transparent substrates of the optical unit
The distance is equal or close to 0.2 mm.
As being further improved for an embodiment of the present invention, at least part of the optical unit is in direct contact this and shines
Diode structure.
As being further improved for an embodiment of the present invention, the covering side of the optical unit and the light-emitting diode knot
Distance between structure is in 0 mm between 2 mm.
As being further improved for an embodiment of the present invention, which is similar or equal to pyramid.
One of for achieving the above object, the present invention provides a kind of semiconductor light-emitting elements, the list including cube shines
Member and optical unit, optical unit are arranged on an at least light-emitting surface for the cube luminescence unit, which includes to cover
Lid side and light radiation side, the covering side is towards the cube luminescence unit, and the position of the light radiation side corresponds to the covering
Side；Wherein, which also includes an at least optical texture, is arranged in the light radiation side, the optical texture is according to light
At least part of the received light in covering side is diffused to different directions by wavelength.
As being further improved for an embodiment of the present invention, which includes opposite at least two luminous
Face, the optical unit include also the first diverging portion and the second diverging portion, and the first diverging portion and second divergent portion do not cover
Cover those light-emitting surfaces of the cube luminescence unit.
One of for achieving the above object, the present invention provides a kind of light-emitting device, including semiconductor as described above is sent out
Optical element and crystal component, crystal component are positioned close to the position of the semiconductor light-emitting elements, which is used for receiving
The light that the semiconductor light-emitting elements are sent out.
As being further improved for an embodiment of the present invention, the distance between the semiconductor light-emitting elements and the crystal component
In 0 cm between 20 cm.
Compared with prior art, the beneficial effects of the present invention are：The semiconductor light-emitting elements of the present invention can reach more
Tropism light extraction, mixed light and the illumination effect of dispersion.
Description of the drawings
Fig. 1 and Fig. 2 is the structural schematic diagram of the semiconductor light-emitting elements of the preferred embodiment of the present invention；
Fig. 3, Fig. 4 and Fig. 5 are the various forms of LED structures and conducting wire of the preferred embodiment of the present invention
Couple schematic diagram；
Fig. 6 and Fig. 7 is the configuration schematic diagram of the wavelength conversion layer of the preferred embodiment of the present invention；
Fig. 8 is the diagrammatic cross-section of the semiconductor light-emitting elements of another preferred embodiment of the present invention；
Fig. 9 is the diagrammatic cross-section of the semiconductor light-emitting elements of another preferred embodiment of the present invention；
Figure 10 is the stereoscopic schematic diagram of the semiconductor light-emitting elements of another preferred embodiment of the present invention；
Figure 11 is the schematic diagram of the bearing seat of the preferred embodiment of the present invention；
Figure 12 is the schematic diagram of the circuit board of the preferred embodiment of the present invention；
Figure 13 is the schematic diagram of the speculum of the preferred embodiment of the present invention；
Figure 14 is the schematic diagram of the quasi cobalt carbon diaphragm of the preferred embodiment of the present invention；
Figure 15 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 16 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 17 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 18, Figure 19 and Figure 20 are the transparent substrates grafting of the preferred embodiment of the present invention or are adhered to showing for bearing seat
It is intended to；
Figure 21 and Figure 22 is the signal for the bearing seat that the transparent substrates of the preferred embodiment of the present invention are adhered to tool holder
Figure；
Figure 23 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 24 is the schematic diagram of the device pedestal of the light-emitting device of another preferred embodiment of the present invention；
Figure 25 is the stereoscopic schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 26, Figure 27, Figure 28 and Figure 29 are that the transparent substrates of the preferred embodiment of the present invention are symmetrical with point symmetry or line
Form is set to the schematic diagram of load carrier；
Figure 30 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 31 and Figure 32 is the schematic diagram of the lampshade of the preferred embodiment of the present invention；
Figure 33 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 34 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 35 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 36 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 37 is the schematic diagram of the light-emitting device of another preferred embodiment of the present invention；
Figure 38 to Figure 40 is schematic diagrames of the Figure 33 of the present invention to the preferred aspect of the optical unit of Figure 37 illustrated embodiments.
Specific implementation mode
Below with reference to specific implementation mode shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure that those skilled in the art are made according to these embodiments, method or functionally
Transformation is included within the scope of protection of the present invention.
It please refers to Fig.1 and Fig. 2, Fig. 1 and Fig. 2 shows for the structure of the semiconductor light-emitting elements of the preferred embodiment of the present invention
It is intended to.As shown in Figures 1 and 2, semiconductor light-emitting elements 1 include：Transparent substrates 2；Supporting surface 210；First main surface 21A；The
Two main surface 21B and at least a LED structure 3.There are two main for tablet or laminar transparent substrates 2 tool itself
Surface, one of them be supporting surface 210, with lighting function LED structure 3 may be disposed at this supporting surface 210 it
On.LED structure 3 is not by the light-emitting surface 34 that transparent substrates 2 cover and the part branch that LED structure 3 is not arranged
The the first main surface 21A that can be shone is collectively formed in support face 210.Transparent substrates 2 are not provided with the another main of LED structure 3
Surface is then the second main surface 21B.Vice versa for aforementioned arrangement mode, and also can be respectively provided with hair in two faces of transparent substrates 2
Near-infrafed photodiodes structure 3.In one embodiment of this invention, LED structure 3 may be disposed at the supporting surface of transparent substrates 2
210, and it is corresponding to the other LED structures 3 for being set to the second main surface 21B staggeredly, make on each face of transparent substrates 2
LED structure 3 when shining, light is not covered by other LED structures 3 on 2 another side of transparent substrates, such as
This can accordingly increase the luminous intensity of semiconductor light-emitting elements 1.Transparent substrates 2 such as sapphire substrate, ceramic substrate, glass base
The material of plate, plastic cement or rubber substrate etc. may include selected from aluminium oxide (Al2O3), magnesia, beryllium oxide, yttrium oxide, oxygen
It is poly- to change thorium, zirconium oxide, lead lanthanum zirconate titanate, GaAs, zinc sulphide, zinc selenide, calcirm-fluoride, magnesium fluoride, silicon carbide (SiC) or chemistry
Close the material of object etc., wherein one of present pre-ferred embodiments use sapphire substrate as transparent substrates 2, because of sapphire
Substrate substantially mono-crystalline structures not only have preferable light transmittance, and heat-sinking capability is good, can extend semiconductor light-emitting elements 1
Service life.However, the problem of easy fragmentation is had in the present invention using traditional sapphire substrate, therefore experiments verify that, the present invention
Transparent substrates 2 preferably select thickness to be greater than or equal to the sapphire substrate of 200 microns (um), so may achieve preferably reliable
Degree, and have preferably carrying and light transmission function.In order to make semiconductor light-emitting elements 1 efficiently send out polytropism light, such as
Amphicheirality or omni-directional light, a semiconductor light-emitting elements 1 of the invention at least LED structure 3 preferably can be selected out
Angular is more than the LED structure of 180 degree.Correspondingly, being set to LED structure 3 on transparent substrates 2 can be from
Light-emitting surface 34 is sent out toward the light advanced far from 2 direction of transparent substrates, and LED structure 3 can also send out and be at least partially into
The light of transparent substrates 2.And enter the light of transparent substrates 2 except can be in addition to the second main surface 21B light extractions of transparent substrates 2, also
The part supporting surface 210 of LED structure 3 and the other surfaces light extraction of substrate 2 can be never set.Semiconductor light-emitting elements 1
It can at least two-sided light extraction, multi-direction light extraction or omnidirection light extraction.In the present invention, the area or second of the first main surface 21A
The area of main surface 21B is the five of the summation area of the light-emitting surface 34 for all LED structures 3 being set on its surface
Times or more, this is to take into account the conditions such as luminous efficiency and heat dissipation and be preferable allocation ratio.
In addition, another preferred embodiment of the present invention is the first main surface 21A and the second main table of semiconductor light-emitting elements 1
The colour temperature difference that face 21B is sent out is equal to or less than 1500K, and semiconductor light-emitting elements 1 is made to have more comprehensively consistent illumination effect.Especially
Its, when the thickness of transparent substrates 2 is as previously mentioned, and using the wave-length coverage of light extraction more than or equal to 420 nanometers and/or small
When 470 nanometers of LED structure 3, the light transmittance of transparent substrates 2 can be greater than or equal to 70%.
The present invention is not limited with above-described embodiment.Hereafter other preferred embodiments of the present invention will be sequentially introduced, and is
Convenient for more each embodiment deviation and simplify explanation, marked in the following embodiments using identical symbol identical
Element, and illustrated mainly for the deviation of each embodiment, and no longer counterweight is multiple is partly repeated.
It please refers to Fig.3, Fig. 4 and Fig. 5, for the present invention in order to obtain power supply to shine, LED structure 3 includes the
One electrode 31A and second electrode 31B.First electrode 31A connect respectively with first on transparent substrates 2 with second electrode 31B and leads
Line 23A and the second connecting wire 23B are electrically connected.Wherein, Fig. 3, Fig. 4 and Fig. 5 disclose various forms of light-emitting diodes respectively
The coupling mode of body structure 3 and conducting wire.Fig. 3 is horizontal type LED structure, and LED structure 3 is formed in light transmission base
On the supporting surface 210 of plate 2, first electrode 31A and second electrode 31B is electrically coupled to the first connecting wire respectively in a manner of routing
23A and the second connecting wire 23B.Fig. 4 be crystal covering type light-emitting diode structure 3, by horizontal type LED structure 3 be inverted and by
First electrode 31A and second electrode 31B makes LED structure 3 be coupled with transparent substrates 2.The electricity of first electrode 31A and second
Pole 31B is to weld or bonding way is electrically coupled to the first connecting wire 23A and the second connecting wire 23B respectively.Such as Fig. 5 institutes
Show, first electrode 31A and second electrode 31B is set to the different sides of LED structure 3, and LED structure 3 is with straight
The setting of cube formula, allow first electrode 31A and second electrode 31B weld or bonding way respectively with the first connecting wire 23A
And second connecting wire 23B be connected.
Fig. 6 and Fig. 7 are please referred to, semiconductor light-emitting elements 1 of the invention can further include wavelength conversion layer 4, and selectivity is set
It is placed on the first main surface 21A or the second main surface 21B, or is directly arranged on LED structure 3.Wavelength
Conversion layer 4 can be in direct contact LED structure 3, or a distance adjacent with LED structure 3 without directly connecing
It touches.It is inorganic or have that wavelength conversion layer 4 contains at least one phosphor powder, such as garnet system, sulfate system or silicate etc.
The phosphor powder of machine material.Wavelength conversion layer 4 by the light that at least partly LED structure 3 is sent out being converted to another kind
The light of wave-length coverage.For example, when LED structure 3 sends out blue light, 4 convertible some blue light of wavelength conversion layer is Huang
Light, and semiconductor light-emitting elements 1 is made finally to send out white light under blue light is mixed with yellow light.In addition, because the first main surface 21A's
The light that light source is directly sent out essentially from LED structure 3, and the light source of the second main surface 21B is to come from light-emitting diodes
The light of body structure 3 passes through the light that sends out of transparent substrates 2, therefore the light intensity (illumination) of the first main surface 21A can be different from the
The light intensity (illumination) of two main surface 21B.Therefore, the semiconductor light-emitting elements 1 of another preferred embodiment of the invention, first
The fluorescent powder content corresponding configuration of main surface 21A and the wavelength conversion layer 4 on the second main surface 21B.For preferably, in the first master
The fluorescent powder content of the wavelength conversion layer 4 of surface 21A contains relative to the phosphor powder of the wavelength conversion layer 4 in the second main surface 21B
The proportional region of amount preferably can from 1 to 0.5 to 1 to 3, or the phosphor powder of wavelength conversion layer 4 in the second main surface 21B contains
Measuring preferably can be from 1 to 0.5 to 1 relative to the proportional region of the fluorescent powder content of the wavelength conversion layer 4 in the first main surface 21A
Than 3.In this way, the illumination or light shape of the semiconductor light-emitting elements 1 of the present invention can meet different application demands, and semiconductor is sent out
The colour temperature difference that the first main surface 21A and the second main surface 21B of optical element 1 are sent out is can be controlled in equal to or less than 1500K, with
Promote the wavelength conversion efficiency and illumination effect of semiconductor light-emitting elements 1.
Please refer to Fig. 8.Fig. 8 depicts the section signal of the semiconductor light-emitting elements of another preferred embodiment of the present invention
Figure.As shown in figure 8, the semiconductor light-emitting elements 1 of the present embodiment include transparent substrates 2 and provide polytropism light extraction function extremely
A few LED structure 14.Transparent substrates 2 have supporting surface 210 positioned opposite to each other and the second main surface 21B.It shines
Diode structure 14 is set on the supporting surface 210 of transparent substrates 2.LED structure 14 includes first electrode 16 and second
Electrode 18, to be electrically connected other devices.LED structure 14 not by light-emitting surface 34 that transparent substrates 2 cover, with do not set
The first main surface 21A is collectively formed in the part supporting surface 210 for setting LED structure 14.
LED structure 14 may include substrate 141, n type semiconductor layer 142, active layers 143 and p type semiconductor layer
144.In this embodiment, the substrate 141 of LED structure 14 can be coupled by chip binder course 28 and transparent substrates 2.Go out
Brightness can be improved because the material property of chip binder course 28 optimizes.For example, the reflectivity of chip binder course 28
It is preferably between the reflectivity of substrate 141 and the reflectivity of transparent substrates 2, uses and increase going out for LED structure 14
Brightness.In addition, chip binder course 28 can be transparent viscose glue or other suitable bond material.First electrode 16 and second electrode
18 be arranged it is opposite in the other side of LED structure 14 and chip binder course 28.First electrode 16 is distinguished with second electrode 18
Being electrically connected p type semiconductor layer 144, (second electrode 18 and the connection relation of n type semiconductor layer 142 are not shown with n type semiconductor layer 142
In Fig. 8).The upper surface of first electrode 16 and the level standard of the upper surface of second electrode 18 are substantially identical.First electrode 16 with
Second electrode 18 can be metal electrode, so without being limited thereto.In addition, semiconductor light-emitting elements 1 further include the first connecting wire 20,
Two connecting wires 22 and wavelength conversion layer 4.First connecting wire 20 and the second connecting wire 22 are arranged in transparent substrates 2.The
One connecting wire 20 and the second connecting wire 22 can be plain conductor or other conductive patterns, but not limited to this.First electrode 16
First connecting wire 20 and the second connecting wire 22 are connected respectively to routing or welding manner with second electrode 18, but are not limited to
This.Wavelength conversion layer 4 is arranged on transparent substrates 2 and covers LED structure 14.In addition, wavelength conversion layer 4 can also be set
It is placed on the second main surface 21B of transparent substrates 2.
In addition to this, in this embodiment in order to increase amount of light that light leaves from transparent substrates 2 and make point of light extraction
Cloth is uniform, the surface also optionally setting nonplanar structure 12M of transparent substrates 2.Nonplanar structure 12M can be various protrusion
Or the geometry, such as pyramid, cone, hemisphere or triangular prism etc. of recess, and can be systematicness arrangement or randomness
Arrangement.Furthermore the surface of transparent substrates 2 also alternative setting class bore carbon (diamond-like carbon, DLC) film 25 with
Increase heat conduction and heat dissipation effect.
Referring to FIG. 9, Fig. 9 depicts the signal of the semiconductor light-emitting elements of another preferable alternate embodiment of the present invention
Figure.Compared to embodiment shown in Fig. 8, in the semiconductor light-emitting elements 1 of the present embodiment, first electrode 16, second electrode 18
The identical faces of LED structure 14 are set to the first chip binder course 28A.First electrode 16 is utilized with second electrode 18
Rewinding method is electrically connected to the first connecting wire 20 and the second connecting wire 22.Wherein, the first connecting wire 20 is connect with second
Conducting wire 22 can extend from the position of corresponding first electrode 16 and second electrode 18 respectively to be generated.First electrode 16 and second electrode
18 can be electrically connected by the second chip binder course 28B in the first connecting wire 20 and the second connecting wire 22.Second chip
Binder course 28B can be conductive bump, such as gold bump or solder projection or conducting resinl, such as elargol, also can be congruent melting
Alloy-layer, such as golden tin (Au-Sn) alloy-layer or low melting point (In-Bi-Sn) alloy-layer, it is so without being limited thereto.In this embodiment,
First chip binder course 28A can be vacancy or include wavelength conversion layer 4.
Referring to FIG. 10, Figure 10 depicts the three-dimensional signal of the semiconductor light-emitting elements of another preferred embodiment of the present invention
Figure.As shown in Figure 10, semiconductor light-emitting elements 310 of the invention include transparent substrates 2, at least a LED structure 3, the
One connection electrode 311A, the second connection electrode 311B and an at least wavelength conversion layer 4.LED structure 3 is set to light transmission
On the supporting surface 210 of substrate 2, and form the first main surface 21A that can be shone.In this embodiment, LED structure 3
Light-emitting angle is more than 180 degree, and at least partly light that LED structure 3 is sent out can inject transparent substrates 2, and injects
At least part of light can be from the second main surface 21B light extractions of corresponding first main surface 21A, and inject the rest part of light
From the other surfaces light extraction of transparent substrates 2, and then reach the illumination effect of the polytropism light extraction of semiconductor light-emitting elements 310.The
One connection electrode 311A and the second connection electrode 311B is respectively arranged at not homonymy or the same side of transparent substrates 2（It is not illustrated in
Figure 10）.First connection electrode 311A and the second connection electrode 311B may respectively be the semiconductor light-emitting elements on transparent substrates 2
The chip that 310 the first connecting wire is extended with the second connecting wire is to external electrode, therefore the first connection electrode 311A and second
Connection electrode 311B is correspondingly electrically connected at LED structure 3.Wavelength conversion layer 4 at least covers LED structure
The 3 and at least part of first connection electrode 311A and the second connection electrode 311B of exposure.Wavelength conversion layer 4 at least partly absorbs
The light that LED structure 3 and/or transparent substrates 2 are sent out, and be converted into the light of another wave-length coverage, then with not
It is wavelength-converted the light mixed light of the absorption of layer 4, to increase the emission wavelength range of semiconductor light-emitting elements 310, improves semiconductor
The illumination effect of light-emitting component 310.It is respectively arranged at transparent substrates 2 since the semiconductor light-emitting elements 310 of the present embodiment have
The first connection electrode 311A and the second connection electrode 311B, traditional light-emitting diode encapsulation procedure can omit, semiconductor hair
Optical element 310 is combined with suitable bearing seat again after can completing the production alone, thus can reach the whole manufacturing yield of promotion,
The advantages that simplifying structure and increasing bearing seat design variation joined together.
1 is please referred to Fig.1, one embodiment of the invention uses the light-emitting device 11 of an at least aforesaid semiconductor light-emitting component.
Light-emitting device 11 includes bearing seat 5 and semiconductor light-emitting elements above-mentioned.The transparent substrates 2 of semiconductor light-emitting elements are removed and can be kept flat
In this bearing seat 5, it can also erect thereon and be coupled to this bearing seat 5.There is the first folder between transparent substrates 2 and bearing seat 5
Angle θ 1, the first angle theta 1 can change for fixation or according to the light shape of light-emitting device needs.The range of first angle theta 1 is preferably
Between 30 degree to 150 degree.
2 are please referred to Fig.1, the bearing seat 5 of light-emitting device 11 of the invention may also include circuit board 6, be coupled to external electrical
Source.Circuit board 6 and the first connecting wire and the second connecting wire being electrically coupled on transparent substrates 2（It is not illustrated in Figure 12）,
And be electrically connected with LED structure 3, so that external power supply is shone through the supply LED structure 3 of circuit board 6 required
Power supply.In other preferred embodiments of the present invention, if without this circuit board 6 is arranged, LED structure 3 also can pass through first
Connecting wire and the second connecting wire（It is not illustrated in Figure 12）It directly is electrically connected at bearing seat 5, makes external power supply can be via holding
5 pairs of LED structures 3 of seat are carried to power.
3 are please referred to Fig.1, light-emitting device 11 of the invention may also include speculum or optical filter 8, be set to transparent substrates 2
The second main surface 21B or supporting surface 210.Speculum or optical filter 8 can reflect the LED structure 3 and be sent out at least
The light of the partial penetration transparent substrates 2, and so that part is changed by reflection light and projected by first main surface 21A.Speculum 8 can
Including an at least metal layer or Bragg mirror (Bragg reflector), but not limited to this.Bragg mirror can be by
Multilayer have different refractivity dielectric film stack and constitute, or by multilayer have different refractivity dielectric film and
Multiple layer metal oxide is stacked and is constituted.
4 are please referred to Fig.1, light-emitting device 11 of the invention may also include class and bore carbon (diamond-like carbon, DLC)
Film 9, wherein quasi cobalt carbon diaphragm 9 are set on the supporting surface 210 and/or the second main surface 21B of transparent substrates 2, with increase heat conduction and
Heat dissipation effect.
Please refer to Fig.1 5.Figure 15 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.Such as Figure 15
Shown, the light-emitting device 10 of the present embodiment includes bearing seat 26 and at least one semiconductor light-emitting elements above-mentioned.Semiconductor light emitting
Element includes transparent substrates 2 and an at least LED structure 14.Semiconductor light-emitting elements can be partially submerged into bearing seat 26.
The electrode 30,32 of bearing seat 26 is electrically connected the connecting wire 20,22 of semiconductor light-emitting elements.Power supply can pass through electrode 30,32
Driving voltage V+, V- are correspondingly provided to drive LED structure 14 to emit beam L.LED structure 14 includes
First electrode 16 and second electrode 18, are electrically connected the first connecting wire 20 and the second connecting wire 22, so in a manner of routing
It is without being limited thereto.In addition, the beam angle of LED structure 14 is more than 180 degree or has multiple light-emitting surfaces so that light-emitting device
10 can be from the first main surface 21A and the second main surface 21B light extractions.Furthermore because some light also can be by LED structure 14
And/or emitted by four side walls of transparent substrates 2, light-emitting device 10 can accordingly have multifaceted light-emitting, six faces luminous or omnidirection
The characteristic of light extraction.
Semiconductor light-emitting elements further include wavelength conversion layer 4, are selectively set to LED structure 14, the first main table
On face 21A or the second main surface 21B.Wavelength conversion layer 4 can absorb at least partly light that LED structure 14 is sent out
And the light of another wave-length coverage is converted to, so that light-emitting device 10 sends out specific photochromic or larger wave-length coverage light.Citing
For, when LED structure 14 generates blue light, the blue light of part is convertible into after being irradiated to wavelength conversion layer 4 as Huang
Light, and light-emitting device 10 can send out the white light being mixed by blue light and yellow light.In addition, transparent substrates 2 can in parallel or
Non-parallel manner directly or indirect is fixed on bearing seat 26.For example, it holds by the side wall of transparent substrates 2 to be fixed on
Seat 26 is carried, transparent substrates 2, which can erectly be fixedly arranged on bearing seat 26 or transparent substrates 2, can be horizontally placed on bearing seat 26, so not
It is limited to this.Transparent substrates 2 preferably include the material of high heat-conduction coefficient, and the heat of the generation of LED structure 14 can be via
Transparent substrates 2 are correspondingly emitted to bearing seat 26, therefore high-power LED structure can be applicable to shining for the present invention
Device.In addition, in one of presently preferred embodiments of the present invention, under same power condition, the light transmission of light-emitting device of the invention
The LED structure that multiple smaller powers are formed on substrate 12, to make full use of the thermal conduction characteristic of transparent substrates 12, example
If the power of each LED structure 14 of the present embodiment can be equal to or less than 0.2 watt, but not limited to this.
Please refer to Fig.1 6.Figure 16 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.Compared to
The light-emitting device 10 ' of light-emitting device shown in figure 15, the present embodiment includes multiple LED structures 14, and at least part
LED structure 14 be electrically connected to each other in a series arrangement.Each LED structure 14 includes first electrode 16 and the
Two electrodes 18.The first electrode 16 of one of LED structure 14 is arranged in concatenated outer end and is electrically connected at first
Connecting wire 20, and the second electrode 18 of another LED structure 14 is arranged in the concatenated other end and is electrically connected at
Second connecting wire 22, it is so without being limited thereto.Multiple LED structures 14 can be electrically connected to each other in series or in parallel.
Multiple LED structures 14 can send out phase light of same color, such as all be blue light diode；Or multiple LED structures
14 send out different color light respectively, to meet different application demand.The light-emitting device 10 ' of the present invention can also be by wavelength conversion layer 4
Send out more kinds of different coloured light.
Please refer to Fig.1 7.Figure 17 depicts the schematic diagram of the light-emitting device of another preferred embodiment of the present invention.Compared to
Light-emitting device shown in Figure 15 and Figure 16, the light-emitting device 50 of the present embodiment can further include holder 51, to link semiconductor hair
Optical element and bearing seat 26.The transparent substrates 2 of semiconductor light-emitting elements are fixed on the side of holder 51 by element bonding layer 52,
And the other side of holder 51 can be embedded at or be inserted into bearing seat 26.In addition, holder 51 have elasticity and can transparent substrates 2 with hold
Angle is formed between load seat 26, and angle is between 30-150 degree.The material of holder 51 may include selected from aluminium, copper, compound
Formula metal, electric wire, ceramics, printed circuit board or other suitable materials.
8, Figure 19 and Figure 20 is please referred to Fig.1, it is preferably real when the transparent substrates 2 in the present invention are set on bearing seat 5
It applies one of example and can pass through the mode of grafting or bonding to reach the engagement of transparent substrates 2 and bearing seat 5.
As shown in figure 18, when transparent substrates 2 are set on bearing seat 5, transparent substrates 2 are plugged in the list of bearing seat 5
One slot 61, and semiconductor light-emitting elements is made to be electrically coupled to slot 61 through connecting wire.Light-emitting diodes on transparent substrates 2
Body structure (being not illustrated in Figure 18) is electrically coupled to power supply through bearing seat 5, and at least partly conductive pattern on transparent substrates 2 or
Connecting wire extends the edge for being connected to transparent substrates 2, and is integrated into the golden finger structure or electrical with multiple conductive contact blades
Port, such as it can be connection electrode 311A above-mentioned and connection electrode 311B (being not illustrated in Figure 18) to be electrically connected port.Work as light transmission
Substrate 2 is plugged in slot 61, and LED structure (being not illustrated in Figure 18) can be powered by bearing seat 5, and transparent substrates 2
The slot 61 of bearing seat 5 can be accordingly fixed on.
Please refer to Fig.1 the structural schematic diagram that 9, Figure 19 is multiple slots that transparent substrates 2 are plugged in bearing seat 5.It is real herein
It applies in example, it is the wafer anode of semiconductor light-emitting elements that transparent substrates 2, which have double pin configurations, one of pin, another
Pin is then the chip cathode of semiconductor light-emitting elements.Two pins all have an at least conductive contact blade using as connection
Port.Accordingly, bearing seat 5 then has at least two slots 61 being consistent with pin inserting surface size so that transparent substrates 2 can be suitable
Profit is engaged in bearing seat 5, and LED structure is allowed to be powered.
Please refer to Fig.2 0.Transparent substrates 2 are engaged in bearing seat 5 by element bonding layer.During engagement, Ke Yitou
The metal materials such as gold, tin, indium, bismuth, silver are crossed to do welding auxiliary and engage transparent substrates 2 and bearing seat 5.Alternatively, tool also can be used
Transparent substrates 2 are auxiliarily fixed on bearing seat 5 in the silica gel or epoxy resin of electric conductivity, make the conductive pattern of semiconductor light-emitting elements
Case or connecting wire can pass through element bonding layer and be correspondingly electrically connected at bearing seat.
Please refer to Fig.2 1 and Figure 22.The bearing seat 5 of the light-emitting device 11 of the present embodiment can be substrate, and baseplate material may include
Selected from aluminium, copper, the composition metal containing aluminium, electric wire, ceramics or printed circuit board etc..The surface or side of bearing seat 5 have
An at least holder 62.Holder 62 and bearing seat 5 can be two mechanism members being separated from each other or integrated mechanism member.Partly lead
Body light-emitting component can pass through the mode of bonding and 62 phase of holder couples, that is, consolidate transparent substrates 2 by element bonding layer 63
Due to bearing seat 5.There is the first angle theta 1 as the aforementioned between bearing seat 5 and transparent substrates 2.5 unsupported surface of bearing seat
Semiconductor light-emitting elements can be also set, to promote the illumination effect of light-emitting device 11.In addition, semiconductor light-emitting elements also can pass through
Inserting mode connecting bracket 62 (is not illustrated in Figure 21 and Figure 22), that is, by connector combination semiconductor light-emitting elements and holder
Transparent substrates 2 are fixed on bearing seat 5 by (and/or holder and bearing seat).Because bearing seat 5 and holder 62 are bent machines
Component, therefore increase flexibility of the present invention in application；It also can pass through and sent out using the semiconductor of different emission wavelengths simultaneously
Optical element is combined into different photochromic, and 11 light extraction of light-emitting device is made to have variability to meet different demands.
Please refer to Fig.2 3.As shown in figure 23, the light-emitting device of the present embodiment including at least semiconductor light emitting component 1 and is held
Carry seat 5.Bearing seat 5 includes an at least holder 62 and an at least circuit pattern P.The transparent substrates of semiconductor light-emitting elements 1
One end and 62 phase of holder couple, to avoid or reduce screening effect of the holder 62 to 1 light extraction of semiconductor light-emitting elements.Bearing seat 5
Material may include selected from the materials such as aluminium, copper, composite metal containing aluminium, electric wire, ceramics or printed circuit board.Holder 62 carries certainly
A part for seat 5 is cut and bends an angle to be formed (such as Figure 21 and the first angle theta 1 shown in Figure 22).Circuit pattern P is set
It is placed on bearing seat 5, circuit pattern P has at least one set of electrically endpoint to be electrically connected power supply.Circuit pattern P it is another some
It extends on holder 62 to be electrically connected semiconductor light-emitting elements 1, semiconductor light-emitting elements 1 is made to can pass through the circuit of bearing seat 5
Pattern P is electrically connected at power supply.In addition, bearing seat 5 can further include an an at least hole H or at least notch G, make fixing piece such as spiral shell
Silk, nail or bolt etc. can pass through hole H or notch G and make bearing seat 5 and other assemblies according to light-emitting device application scenarios
Further structure dress or installation.Meanwhile the setting of hole H or notch G also increases the heat dissipation area of bearing seat 5, promotes light-emitting device
Heat dissipation effect.
Please refer to Fig.2 4.Figure 24 depicts the solid of the device pedestal of the light-emitting device of another preferred embodiment of the present invention
Schematic diagram.As shown in figure 24, the device pedestal 322 of the present embodiment includes bearing seat 5 and an at least holder 62.Compared to Figure 23
Embodiment, the holder 62 of the present embodiment includes at least one shape portion 342 and notch 330.Electrode 30,32 is respectively arranged at notch
330 both sides, stripes 342 at least constitute the abutment wall of notch 330.The present invention semiconductor light-emitting elements corresponds to notch 330 and
Holder 62 couples.The connecting wire of semiconductor light-emitting elements is electrically connected at electrode 30,32, and semiconductor light-emitting elements is made to can pass through
Circuit pattern on holder 62 and bearing seat 5 is driven with power supply electric property coupling.The size of notch 330 can be not less than semiconductor
The main light-emitting surface of light-emitting component makes the light extraction of semiconductor light-emitting elements not covered by holder 62.Holder 62 and bearing seat 5 it
Between junction can be movable design, make angle between holder 62 and bearing seat 5 that can optionally be adjusted.
Please refer to Fig.2 4 and Figure 25.Figure 25 depicts the three-dimensional signal of the light-emitting device of another preferred embodiment of the present invention
Figure.Embodiment compared to Figure 24, light-emitting device 302 shown in Figure 25 further include at least holder with multiple notches 330
62.Multiple notches 330 are respectively arranged at two relative edges of holder 62, and stripes 342 at least constitute the abutment wall of each notch 330.
Multiple semiconductor light-emitting elements 310 are correspondingly arranged with multiple notches 330, and the circuit pattern of each semiconductor light-emitting elements 310 or
Connection electrode (being not illustrated in Figure 25) is correspondingly arranged respectively with electrode 30 and electrode 32 and electrical connection.The luminous dress of the present embodiment
It sets 302 and further may include that multiple holders 62, holder 62 are set between semiconductor light-emitting elements 1 and bearing seat 5.Holder 62
Length can be substantially between 5.8-20 microns (um).Each it is provided between the holder 62 of semiconductor light-emitting elements and bearing seat 5
Angle optionally can respectively be adjusted.In other words, the angle between bearing seat 5 and at least one holder 62 may differ from
Angle between bearing seat 5 and other a holders 62, to reach required illumination effect, but is not limited thereto.In addition, also may be used
In same supports or different support setting, the combination of the semiconductor light-emitting elements with different emission wavelength ranges, makes light-emitting device
Color effect it is more rich.
In order to improve the brightness and improve the light-emitting effect, the light-emitting device of another preferred embodiment of the invention has multiple
The semiconductor light-emitting elements of transparent substrates 2 are simutaneously arranged on the bearing seat or other load carriers of such as previous embodiment,
At this time can sampling site it is symmetrical or line is symmetrically arranged mode and arranges, i.e., multiple semiconductor light-emitting elements with transparent substrates 2 are to put pair
Claim or symmetrical form is set on load carrier.The light-emitting device 11 for please referring to Fig.2 6, Figure 27, Figure 28 and Figure 29 is overlooked
Multiple semiconductor light-emitting elements are arranged on various load carriers 60 of different shapes in figure, the light-emitting device 11 of each embodiment, and
And by point symmetry or it is symmetrical in the form of configure, enable the present invention light-emitting device 11 light extraction uniformly (light-emitting diode knot
Structure omits signal).The light-out effect of light-emitting device 11 can also again be done further by the size for changing the first above-mentioned angle
Adjustment and improvement.As shown in figure 26, an angle of 90 degrees arrangement is pressed from both sides between semiconductor light-emitting elements in a manner of point symmetry, at this time from luminous
Any surface in the four sides of device 11 sees equal face at least two semiconductor light-emitting elements toward light-emitting device 11.As shown in figure 27,
Angle is less than 90 degree between the semiconductor light-emitting elements of light-emitting device 11.As shown in figure 28, the semiconductor light emitting of light-emitting device 11
Element is arranged along the edge of load carrier 60.As shown in figure 29, angle is more than 90 between the semiconductor light-emitting elements of light-emitting device
Degree.The present invention another preferred embodiment (being not shown in the drawing), multiple semiconductor light-emitting elements can in a manner of asymmetric arrangement,
And at least part of multiple semiconductor light-emitting elements can concentrate or scattering device, to reach light-emitting device 11 when different application
Light shape need.
Please refer to Fig.3 0.Figure 30 depicts the diagrammatic cross-section of the light-emitting device of another preferred embodiment of the present invention.Such as
Shown in Figure 30, light-emitting device 301 includes semiconductor light-emitting elements 310 and holder 321.Holder 321 includes notch 330, and partly
Conductor light-emitting component 310 is correspondingly arranged with notch 330.In the present embodiment, the outside of holder 321 also can be used as pin or be bent into
Connection pad needed for surface soldered, to fix and/or be electrically connected at other circuit elements.The light-emitting surface of semiconductor light-emitting elements 310
It is set in notch 330, no matter whether holder 321 is translucent material, light-emitting device 301 can all possess multi-panel or six faces shine
Illumination effect.
1 is please referred to Fig.3, is the light-emitting device of the specific embodiment of the invention.Light-emitting device includes tubular lampshade 7, at least one
Semiconductor light-emitting elements 1 and load carrier 60.Semiconductor light-emitting elements 1 are set on load carrier 60, and at least part
Semiconductor light-emitting elements 1 be located at tubular lampshade 7 and be formed by space.It refer again to the section signal of Figure 32.When multiple half
It is with not mutual when conductor light-emitting component 1 is set within lampshade 7, between the first main surface 21A of each semiconductor light-emitting elements 1
Parallel mode spaced apart.It is formed by addition, at least part of multiple semiconductor light-emitting elements 1 can be set to lampshade 7
In space, and the inner wall of lampshade 7 it is not close to.Preferred embodiment is that the distance between semiconductor light-emitting elements 1 and lampshade 7 D can
It is equal or be more than 500 microns (μm)；But lampshade 7 can be also formed in a manner of encapsulating, and so that lampshade 7 is at least partly coated and directly connects
It touches in semiconductor light-emitting elements 1.
Figure 33 to Figure 37 be different embodiments of the invention to send out glare light-emitting device 10 schematic diagram.Such as Figure 33
Shown, light-emitting device 10 may include holder 62, the semiconductor light emitting unit 1 that is arranged on holder 62 and be arranged in semiconductor
On luminescence unit 1 and as the optical unit 70 of one of 1 component of semiconductor light emitting unit.Semiconductor light emitting unit 1 may include as
The structure of the polytropism light source of at least two-sided light extraction shown in present invention.Semiconductor light emitting unit 1 can be card-type,
Strip type, clavate type, Cubic or candle shape type.Optical unit 70 may include covering side 72 and light radiation side 74.Cover side 72
With light radiation side 74 opposite to each other and be correspondingly arranged.Optical unit 70 be arranged in semiconductor light emitting unit 1, covering side 72 towards
Semiconductor light emitting unit 1.Optical unit 70 also includes at least one optical texture 76, is arranged in light radiation side 74.Light radiation side
The 74 at least partly surfaces that optical texture 76 is not arranged can be flat surface.Optical texture 76 can be approximately or equal to pyramid or water chestnut
At least part of shape.The quantity of optical texture 76 can be one or more depending on effect on demand.When optical texture 76
When quantity is more than one, optical texture 76 can with array, be staggered or concentric arrangement setting, as shown in Figure 38 to Figure 40.Light
Learning structure 76 can exhale at least part for covering 72 received light of side from different directions.Light passes through optical texture
Refraction angle when 76 can be corresponding according to the difference of refractive index between wavelength of light and optical texture 76 and surrounding medium (such as air)
Change.Specifically, the present embodiment semiconductor light emitting unit 1 includes with supporting surface 210 and the second main surface being oppositely arranged
The transparent substrates 2 of 21B, and the LED structure 14 that is arranged on the supporting surface 210 of transparent substrates 2.Light-emitting diode
Structure 14 and at least partly supporting surface 210 that LED structure 14 is not set be collectively formed can light extraction the first main surface
21A.At least partly light that LED structure 14 is sent out may pass through transparent substrates 2 and by the second main surface 21B light extraction.Hair
The quantity of near-infrafed photodiodes structure 14 can be one or more.The first master in semiconductor light emitting unit 1 is arranged in optical unit 70
On the 21A of surface, and wavelength conversion layer 4 may be provided between optical unit 70 and transparent substrates 2.The surface for covering side 72 is substantially flat
Row is in the correspondence surface of wavelength conversion layer 4.
In addition, as shown in figure 33, optical unit 70 also may include the first diverging portion 78, the second diverging portion 80 and interconnecting piece
82.Interconnecting piece 82 is connected between the first diverging portion 78 and the second diverging portion 80, and it can be U-shaped knot to make the sectional view of optical unit 70
Structure.When optical unit 70 combines semiconductor light emitting unit 1, the first diverging portion 78 and the second diverging portion 80 are covered each by transparent substrates
2 the first main surface 21A and the second main surface 21B.End face 2a of the inner surface 821 of interconnecting piece 82 towards transparent substrates 2, and
Inner surface 821 can form recess 84.The sectional view of the recess 84 of interconnecting piece 82 has recess angle θ 2, and angle can be at 70 degree extremely
Between 140 degree.The angle θ 2 that is recessed can preferably be equal or close to 90 degree.In this embodiment, the outer surface 823 of interconnecting piece 82 is from light
Radiation side 74 extends and can be plane.Light can be dissipated via the outer surface 823 of interconnecting piece 82 and the first diverging portion 78 and second
The 74 outside light extraction of light radiation side in portion 80.
Compared to Figure 33 illustrated embodiments, the optics list of the light-emitting device 10 of another embodiment as shown in Figure 34 of the present invention
Member 70 is also alternative comprising at least one optical texture 76 being arranged on the outer surface of interconnecting piece 82 823, that is, in optics
It is equipped with optical texture 76 in the interconnecting piece 82 of unit 70, the first diverging portion 78 and the second diverging portion 80, makes light-emitting device 10
The light of generation can outward be dissipated via the outer surface 823 of optical unit 70 and light radiation side 74.Shown in Figure 35 of the present invention
In another embodiment, the interconnecting piece 82 of optical unit 70 may include lug boss 86.The range of the radius of curvature of lug boss 86 can be situated between
In 0.01 mm to 10 mm, and the preferred values of the radius of curvature of lug boss 86 are equal or close to 3 mm.Lug boss 86 can be used to by
Semiconductor light emitting unit 1 (or LED structure 14) is emitted and the light through 70 top of optical unit dissipates outward.
As shown in Figure 33 to Figure 35, the section view of the optical texture 76 in the first diverging portion 78 or the second diverging portion 80 is set
Figure can be similar or equal to triangle, and the triangle has vertex angle theta 3, and angle can be between 30 degree to 140 degree.Into
One step, the optical texture 76 being arranged on the outer surface of interconnecting piece 82 823 or similar or equal to triangle, and it is described
Triangle has vertex angle theta 3, and angle can be between 50 degree to 140 degree.Setting the first diverging portion 78, the second diverging portion 80 and/
Or the vertex angle theta 3 of the optical texture 76 on interconnecting piece 82 can preferably be equal or close to 70 degree.
Described in the several embodiments referred to according to the present invention, at least part of optical unit 70 can be in direct contact wavelength convert
Layer 4.However in other embodiments of the invention, existence range between the covering side 72 and wavelength conversion layer 4 of optical unit 70
In 0 mm to the distance D1 between 2 mm.The preferred values of distance D1 between the covering side 72 of optical unit 70 and wavelength conversion layer 4
0.2 mm can be equal or close to.Similarly, it also may be present between the interconnecting piece 82 of optical unit 70 and the end face 2a of transparent substrates 2
Range is in 0 mm to the distance D2 between 2 mm.The preferred values of distance D2 can be equal or close between interconnecting piece 82 and end face 2a
0.2 mm.In addition, range also may be present in 0 mm to 2 between the covering side 72 and LED structure 14 of optical unit 70
The distance between mm D3.Because wavelength conversion layer 4 can be laid on it is on LED structure 14 therefore, distance D3 be generally approximate away from
From D1.
Figure 36 is please referred to, Figure 36 is the schematic diagram of the light-emitting device 11 of another preferred embodiment of the present invention.Compared to this hair
Bright embodiment illustrated in fig. 23, light-emitting device 11 also may include that the optical unit 70 in semiconductor light emitting unit 1, and cladding is arranged
Optical unit 70 and semiconductor light emitting unit 1 and with crystal photo with or approximate optical effect crystal component 88.It is specific next
It says, the light-emitting device 11 of the present embodiment may include bearing seat 5, three holders 62 for being connected to bearing seat 5, be separately positioned on those
The semiconductor light emitting unit 1 of holder 62 and for coating the crystal component 88 of semiconductor light emitting unit 1.It is sent out with semiconductor
Those holders 62 of light unit 1 can be symmetricly set on bearing seat 5.Either one or two of those semiconductor light emitting units 1 may include phase
To at least two light-emitting surfaces of setting, and the optical unit 70 with multiple optical textures 76 may be provided at semiconductor light emitting unit
On 1 those light-emitting surfaces, i.e., semiconductor light emitting unit 1 is folded between optical texture 76.As shown in Figure 38 to Figure 40, optics list
Member 70 can be the chip component being attached on semiconductor light emitting unit 1.Crystal component 88, which can have, to be used for accommodating semiconductor light emitting
The space of unit 1 and optical texture 76.Distance between each semiconductor light-emitting elements 1 and crystal component 88 can be in 0 cm to 20 cm
Between.The light that semiconductor light-emitting elements 1 generate can be dissipated via the optical texture 76 of optical unit 70, then pass through crystal component
88 further refractions so that light-emitting device 11 of the invention can provide dazzling dazzling visual effect and can be applied to such as crystal
The decorating ceiling lamp of lamp.
Figure 37 is please referred to, Figure 37 is the element explosive view of the semiconductor light emitting unit 1 ' of another preferred embodiment of the present invention.
Semiconductor light emitting unit 1 ' may include cube luminescence unit 90 and optical unit 70.Cube luminescence unit 90 may include phase
To at least two light-emitting surfaces 92 of setting.At least one light-emitting surface 92 in cube luminescence unit 90 is arranged in optical unit 70
On.When optical unit 70 is combined with cube luminescence unit 90, the first diverging portion 78 and the second diverging portion of optical unit 70
80 are covered each by two opposite light-emitting surfaces 92, and the covering side 72 of optical unit 70 is towards cube luminescence unit 90.It is multiple
Optical texture 76 is arranged in the light radiation side 74 of optical unit 70 with covering side 72 relatively, will cover the light that side 72 is received
At least part of line is dissipated according to the refractive index difference between optical wavelength and optical texture 76 and surrounding medium toward different directions.
Can be viscose glue, air in medium of the optical unit 70 between cube luminescence unit 90 in distance D1, D2, D3
Or vacuum state.Optical unit 70 is made by optical material, for conducting the light of the generation of luminescence unit 90, and is existed through setting
The optical texture 76 of light radiation side 74 and outer surface 823 is by light from the first diverging portion 78, the second diverging portion 80 and interconnecting piece 82
Export.Therefore, optical unit 70 has the function of the diverging of guide-lighting and light to show magnificent dazzling effect.Optical texture 76 can be more
Angular cone, such as pyrometric cone, quadrangular pyramid.It is dissipated through optical texture 76 by the light of optical unit 70, therefore partly led outward
The light that body luminescence unit 1 is sent out has scalar property's optical characteristics, and can be used to provide and dazzle beautiful effect of shadow.
In above-mentioned multiple embodiments of the present invention, the element with identical number of any embodiment and other embodiments
Structure having the same and explanation, therefore do not repeat to be illustrated.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in the present invention in each embodiment may also be suitably combined to form this field skill to bright book
Other embodiment that art personnel are appreciated that and the part for also belonging to the present invention.
The series of detailed descriptions listed above only for the present invention feasible embodiment specifically
Bright, they are all without departing from equivalent implementations made by technical spirit of the present invention not to limit the scope of the invention
Or change should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of semiconductor light-emitting apparatus, it is characterised in that include：
Transparent substrates have the supporting surface being oppositely arranged and the second main surface and one positioned at the supporting surface and second master
Side between surface；
Multiple LED structures, be arranged in the supporting surface, and it is Chong Die with not with multiple LED structure at least
Partly the supporting surface formed can light extraction the first main surface, at least partly light that multiple LED structure generates passes through
The transparent substrates and from the second main surface light extraction；
Optical unit is provided only in first main surface and second main surface or in first main surface, the optical unit
Including covering side and light radiation side, the covering side is towards the transparent substrates, and the position of the light radiation side corresponds to the covering
Side；Optical texture, setting in the light radiation side, the optical texture according to the wavelength of light by the received light in covering side extremely
A few part diffuses to different directions；And
Phosphor powder is arranged on multiple LED structure.
2. semiconductor light-emitting apparatus as described in claim 1, which is characterized in that the optical unit also include the first diverging portion with
And the second diverging portion, it is covered each by first main surface and second main surface of the transparent substrates.
3. semiconductor light-emitting apparatus as described in claim 1, which is characterized in that the sectional plane of the optical texture be similar to or
Equal to triangle, and the triangle includes apex angle of the angle between 30 degree to 140 degree.
4. semiconductor light-emitting apparatus as described in claim 1, which is characterized in that the quantity of the optical texture is more than one, and
Those optical textures with array, be staggered or concentric arrangement setting.
5. semiconductor light-emitting apparatus as described in claim 1, which is characterized in that contain in the fluorescent powder of first main surface
Amount is different from the content in the fluorescent powder of second main surface.
6. semiconductor light-emitting apparatus as described in claim 1, which is characterized in that contain in the fluorescent powder of first main surface
Amount is equivalent to the content ratio range from 1 to 0.5 to 1 to 3 in the fluorescent powder of second main surface, or in second master
The content of the fluorescent powder on surface is equivalent to the content ratio range from 1 to 0.5 to 1 to 3 in the fluorescent powder of first main surface.
7. semiconductor light-emitting apparatus as described in claim 1, which is characterized in that the optical texture is similar or equal to pyramid
Shape.
8. a kind of light-emitting device, it is characterised in that include：
Semiconductor light-emitting apparatus as described in claim 1；And
Crystal component is positioned close to the position of the semiconductor light-emitting apparatus, which is used for receiving the semiconductor light emitting
The light that device is sent out.
9. light-emitting device as claimed in claim 8, which is characterized in that between the semiconductor light-emitting apparatus and the crystal component away from
From in 0cm between 20cm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/218,944 US20180006199A9 (en) | 2012-05-29 | 2014-03-18 | Semiconductor light emitting element with dispersive optical unit and illumination device comprising the same |
| US14/218,944 | 2014-03-18 |
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| CN104934521A CN104934521A (en) | 2015-09-23 |
| CN104934521B true CN104934521B (en) | 2018-10-23 |
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| CN201520148755.6U Active CN204668357U (en) | 2014-03-18 | 2015-03-16 | Semiconductor light-emitting elements and light-emitting device thereof |
| CN201510114780.7A Active CN104934521B (en) | 2014-03-18 | 2015-03-16 | Semiconductor light-emitting elements and its light-emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2636067Y (en) * | 2003-04-25 | 2004-08-25 | 吴汉文 | Lighting lamp decoration structure |
| CN201237144Y (en) * | 2008-07-02 | 2009-05-13 | 容振光 | Diode lamp cap structure |
| CN102537720A (en) * | 2010-11-30 | 2012-07-04 | 胜华科技股份有限公司 | Crystal lamp source |
| CN103456728A (en) * | 2012-05-29 | 2013-12-18 | 璨圆光电股份有限公司 | Light-emitting component and light-emitting device thereof |
| CN204668357U (en) * | 2014-03-18 | 2015-09-23 | 璨圆光电股份有限公司 | Semiconductor light-emitting elements and light-emitting device thereof |
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| US20050052885A1 (en) * | 2003-09-04 | 2005-03-10 | Amazing International Enterprise Limited | Structure of LED decoration lighting set |
| US7569406B2 (en) * | 2006-01-09 | 2009-08-04 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
| KR100703217B1 (en) * | 2006-02-22 | 2007-04-09 | 삼성전기주식회사 | Method for fabricating a light emitting diode package |
| WO2008060615A1 (en) * | 2006-11-15 | 2008-05-22 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
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- 2015-03-11 TW TW104107764A patent/TWI550898B/en active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2636067Y (en) * | 2003-04-25 | 2004-08-25 | 吴汉文 | Lighting lamp decoration structure |
| CN201237144Y (en) * | 2008-07-02 | 2009-05-13 | 容振光 | Diode lamp cap structure |
| CN102537720A (en) * | 2010-11-30 | 2012-07-04 | 胜华科技股份有限公司 | Crystal lamp source |
| CN103456728A (en) * | 2012-05-29 | 2013-12-18 | 璨圆光电股份有限公司 | Light-emitting component and light-emitting device thereof |
| CN204668357U (en) * | 2014-03-18 | 2015-09-23 | 璨圆光电股份有限公司 | Semiconductor light-emitting elements and light-emitting device thereof |
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| TW201537773A (en) | 2015-10-01 |
| TWI550898B (en) | 2016-09-21 |
| TWM507584U (en) | 2015-08-21 |
| CN204668357U (en) | 2015-09-23 |
| CN104934521A (en) | 2015-09-23 |
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