US20130320363A1 - Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device - Google Patents

Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device Download PDF

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Publication number
US20130320363A1
US20130320363A1 US13/903,998 US201313903998A US2013320363A1 US 20130320363 A1 US20130320363 A1 US 20130320363A1 US 201313903998 A US201313903998 A US 201313903998A US 2013320363 A1 US2013320363 A1 US 2013320363A1
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United States
Prior art keywords
led
disposed
main surface
sapphire substrate
led chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US13/903,998
Inventor
Shyi-Ming Pan
Wei-Kang Cheng
Chih-Shu Huang
Chen-Hong Lee
Shih-Yu Yeh
Chi-Chih Pu
Cheng-Kuang Yang
Shih-Chieh Tang
Siang-Fu Hong
Tzu-Hsiang Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Epistar Corp
Original Assignee
Formosa Epitaxy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW101125599A external-priority patent/TWI479695B/en
Priority claimed from TW101131198A external-priority patent/TW201409775A/en
Priority claimed from TW101131643A external-priority patent/TWI464908B/en
Priority claimed from TW101132185A external-priority patent/TWI577919B/en
Priority claimed from TW101132187A external-priority patent/TWI490432B/en
Priority claimed from TW102116429A external-priority patent/TWI533468B/en
Priority claimed from TW102116650A external-priority patent/TWI511279B/en
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Assigned to FORMOSA EPITAXY INCORPORATION reassignment FORMOSA EPITAXY INCORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHENG, WEI-KANG, Hong, Siang-Fu, HUANG, CHIH-SHU, LEE, CHEN-HONG, PAN, SHYI-MING, Pu, Chi-Chih, TANG, SHIH-CHIEH, Wang, Tzu-Hsiang, YANG, CHENG-KUANG, Yeh, Shih-Yu
Priority to US14/089,708 priority Critical patent/US9368483B2/en
Publication of US20130320363A1 publication Critical patent/US20130320363A1/en
Priority to US14/218,944 priority patent/US20180006199A9/en
Assigned to EPISTAR CORPORATION reassignment EPISTAR CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FORMOSA EPITAXY INCORPORATION
Priority to US15/631,482 priority patent/US10030857B2/en
Abandoned legal-status Critical Current

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Definitions

  • the present invention relates to a sapphire substrate, a light emitting diode chip, and an illumination device, and more particularly, to a sapphire substrate configured to form a light emitting diode chip providing light in multi-directions, a light emitting diode chip, and an illumination device including the light emitting diode chip.
  • a light beam emitted from a light emitting diode is a kind of directional light source, which is different from a dispersive light source of a conventional bulb. Accordingly, applications of LED are limited. For instance, the conventional LED can not or may be hard to provide required lighting effect for indoor and outdoor illumination applications. Additionally, conventional LED illumination devices emit light beams from a single side and luminous efficiency of the conventional LED illumination device is relatively low accordingly.
  • LED light emitting diode
  • a preferred embodiment of the present invention provides a sapphire substrate configured to form a light emitting diode chip providing light in multi-directions.
  • the sapphire substrate includes a growth surface and a second main surface opposite to each other.
  • a thickness of the sapphire substrate is thicker than or equal to 200 micrometers.
  • a preferred embodiment of the present invention provides a light emitting diode (LED) chip.
  • the LED chip includes a transparent substrate, a plurality of LED structures, an insulating layer and a conductive pattern.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structures are disposed on the growth surface and form a first main surface where light emitted from with at least a part of the growth surface without the LED structures.
  • Each of the LED structures includes a first electrode and a second electrode.
  • the insulating layer is disposed on at least some of the LED structures.
  • the conductive pattern is disposed on the insulating layer and electrically connected to at least some of the first electrodes and at least some of the second electrodes. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface.
  • the LED chip includes a transparent substrate and at least one LED structure.
  • a material of the transparent substrate includes sapphire, and the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the growth surface
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • the LED chip includes a transparent substrate, at least one LED structure and a wavelength conversion layer.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • the wavelength conversion layer is at least disposed on the LED structure or the second main surface. The wavelength conversion layer at least partially absorbs a light beam emitted from the LED structure and converts the light beam into another light beams having different wavelength range.
  • the LED chip includes a transparent substrate and a plurality of LED structures.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structures are disposed on the growth surface.
  • a light emitting surface of each LED structure uncovered by the transparent substrate and at least a part of the growth surface without the LED structures form a first main surface where light emitted from.
  • Each of the LED structures has a beam angle greater than 180 degrees. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface.
  • An area of the first main surface or an area of the second main surface is larger than 5 times of a total area formed from at least one of the light emitting surfaces of each LED structure.
  • the LED chip includes a transparent substrate, at least one diamond-like carbon (DLC) film, and at least one LED structure.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the DLC film is disposed on the transparent substrate.
  • the LED structure is disposed on the growth surface.
  • a light emitting surface of the LED structure uncovered by the transparent substrate and at least a part of the growth surface without the LED structure form a first main surface where light emitted from.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • the LED chip includes a transparent substrate, at least one LED structure and a reflector.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the reflector is disposed on the second main surface.
  • the LED structure is disposed on the growth surface.
  • a light emitting surface of the LED structure uncovered by the transparent substrate and at least part of the growth surface without the LED structure form a first main surface where light emitted from.
  • the LED structure has a beam angle greater than 180 degree.
  • the LED chip includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate.
  • the first connecting conductor and the second connecting conductor are electrically connected to the LED structure.
  • the illumination device includes a supporting base and an LED chip providing light in multi-directions, wherein the LED chip is disposed on the supporting base.
  • the illumination device includes a LED chip and a support.
  • the LED chip includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate.
  • the first connecting conductor and the second connecting conductor are electrically connected to the LED structure.
  • the support includes at least one opening, and the LED chip is disposed correspondingly to the opening.
  • the illumination device includes a plurality of LED chips and a device frame.
  • Each of the LED chips includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate.
  • the first connecting conductor and the second connecting conductor are electrically connected to the LED structure.
  • the device frame includes a supporting base and a plurality of supports extending outward from the supporting base. Each of the supports includes at least one opening, and the LED chips are disposed correspondingly to at least some of the openings.
  • the illumination device includes a plurality of LED chips and a light bar.
  • Each of the LED chips includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate.
  • the first connecting conductor and the second connecting conductor are electrically connected to the LED structure.
  • the light bar includes a plurality of openings.
  • the light bar has an extending direction, and the openings are disposed along the extending direction.
  • the LED chips are disposed correspondingly to at least some of the openings.
  • the illumination device includes a plurality of LED chips and a supporting base.
  • Each of the LED chips includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor.
  • the transparent substrate has a growth surface and a second main surface disposed opposite to each other.
  • the LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure.
  • the LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface.
  • the first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate.
  • the first connecting conductor and the second connecting conductor are electrically connected to the LED structure.
  • the supporting base includes a plurality of openings. The openings are disposed as an array. The LED chips are disposed correspondingly to at least some of the openings.
  • the device frame includes a supporting base and a plurality of supports. Each of the supports extends from the supporting base. Each of the supports includes at least one opening and a plurality of electrodes disposed on two sides of the opening.
  • the LED structure is disposed on the transparent substrate, and the transparent substrate allows the light beam emitted by the LED structure passing through. Accordingly, the LED chip in the present invention can emit light in at least multi-directions or all directions. The luminous efficiency of the illumination device may be accordingly enhanced, and the light shape of the LED illumination device may also be improved. Additionally, since the insulating layer, the conductive pattern and the LED structures of the LED chip in the present invention can be fabricated through wafer-level processes, the related manufacturing cost may be reduced, and the corresponding LED chip may have an improved reliability.
  • FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a light emitting diode (LED) chip according to a preferred embodiment of the present invention.
  • FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between a light emitting diode structure and conductors according to a preferred embodiment of the present invention.
  • FIG. 6 and FIG. 7 are schematic diagrams illustrating a disposition of a wavelength conversion layer according to a preferred embodiment of the present invention.
  • FIG. 8 is a cross-sectional diagram illustrating a LED chip according to another preferred embodiment of the present invention.
  • FIG. 9 is an equivalent circuit diagram of a LED chip according to another preferred embodiment of the present invention.
  • FIG. 10 is a schematic diagram illustrating a LED chip according to another preferred embodiment of the present invention.
  • FIG. 11 is a schematic diagram illustrating a supporting base according to a preferred embodiment of the present invention.
  • FIG. 12 is a schematic diagram illustrating a circuit board according to a preferred embodiment of the present invention.
  • FIG. 13 is a schematic diagram illustrating a reflector according to a preferred embodiment of the present invention.
  • FIG. 14 is a schematic diagram illustrating a diamond-like carbon film according to a preferred embodiment of the present invention.
  • FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 16 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 17-19 are schematic diagrams illustrating a transparent substrate inserted or adhered to a supporting base according to a preferred embodiment of the present invention.
  • FIG. 20 and FIG. 21 are schematic diagrams illustrating a transparent substrate adhered to a supporting base with supports according to a preferred embodiment of the present invention.
  • FIG. 22 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 23 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention.
  • FIG. 24 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 25-28 are schematic diagrams illustrating transparent substrates point-symmetrically or line-symmetrically disposed on a supporting structure according to a preferred embodiment of the present invention.
  • FIG. 29 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 30 and FIG. 31 are schematic diagrams illustrating a lamp housing according to a preferred embodiment of the present invention.
  • FIG. 32 is a top-view diagram illustrating an advertisement lamp housing according to a preferred embodiment of the present invention.
  • FIGS. 33-36 are schematic diagrams illustrating a bulb lamp according to a preferred embodiment of the present invention.
  • FIG. 37 is a schematic diagram illustrating a light bar according to another preferred embodiment of the present invention.
  • FIG. 38 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 39 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a light emitting diode (LED) chip or a light emitting plate according to a preferred embodiment of the present invention.
  • a LED chip 1 includes a transparent substrate 2 , a growth surface 210 , a first main surface 21 A, a second main surface 21 B and at least one LED structure 3 providing light in multi-directions.
  • the transparent substrate 2 which is a sheet type substrate, has two main surfaces, and one of the surfaces is the growth surface 210 .
  • the LED structure 3 capable of emitting light is disposed on the growth surface 210 .
  • a light emitting surface 34 of the LED structure 3 uncovered by the transparent substrate 2 and at least a part of the growth surface 210 without the LED structure form the first main surface 21 A where light emitted from.
  • the second main surface 21 B is another main surface of the transparent substrate 2 without the LED structures 3 .
  • the disposition described above may also be reversed, or the LED structure 3 may be disposed on the two surfaces of the transparent substrate 2 .
  • LED structures 3 may be disposed on the growth surface 210 of the transparent substrate 2 interlacedly corresponding to other LED structures 3 disposed on the second main surface 21 B, such that light beams emitted from LED structure 3 on one surface of the transparent substrate 2 would not be blocked by other LED structure 3 on another surface of the transparent substrate 2 .
  • a material of the transparent substrate 2 may comprise one selected from aluminum oxide (Al 2 O 3 ), sapphire containing aluminum oxide, silicon carbide (SiC), glass, plastic or rubber.
  • the transparent substrate may be a sapphire substrate in a preferred embodiment of the present invention.
  • the structure of the sapphire substrate is substantially single crystal.
  • the sapphire substrate has properties of higher light transmittance and better heat dissipation capability.
  • the sapphire substrate may be used to increase the life time of the LED chip 1 .
  • the conventional sapphire substrate used for forming conventional LED structure may be fragile when applied in the present invention.
  • the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness thicker than or equal to 200 micrometers so as to perform better reliability, supporting performance and transparency.
  • the LED structure 3 in this invention preferably has a beam angle greater than 180 degrees. Accordingly, the LED structure 3 disposed on the transparent substrate 2 may emit light beams from the light emitting surface 34 toward a direction away from the transparent substrate 2 , and the LED structure 3 may also emit light beams at least partially entering the transparent substrate 2 .
  • the light beams entering the transparent substrate 2 may emerge from the second main surface 21 B opposite to the first main surface 21 A, and the light beams entering the transparent substrate 2 may also be emitted from a part of the growth surface 210 without LED structures 3 or emitted from other surfaces of the transparent substrate 2 .
  • the LED chip 1 may then be capable of emitting light in multi-directions including dual-directions or full directions.
  • an area of the first main surface 21 A or an area of the second main surface 21 B is larger than 5 times of a total area formed from at least one of the light emitting surfaces 34 of each LED structure, and this is a preferred proportion according to the consideration of both the luminous efficiency and the heat dissipation performance.
  • a difference in color temperatures of light beams emitted from the first main surface 21 A and the second main surface 21 B of the LED chip 1 is smaller than or equal to 1500K so as to uniform light emitting effects of the LED chip 1 .
  • a light transmittance of the transparent substrate 3 is larger than or equal to 70% for light beams having a wavelength range larger than or equal to 420 nanometers, or light beams having a wavelength rage smaller than or equal to 470 nanometers.
  • the LED structure 3 includes a first electrode 31 A and a second electrode 31 B for receiving electricity.
  • the first electrode 31 A and the second electrode 31 B are respectively and electrically connected to a first connecting conductor 23 A and a second connecting conductor 23 B on the transparent substrate 2 .
  • FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between the light emitting diode structure 3 and the conductors.
  • FIG. 3 illustrates a horizontal type LED structure, the LED structure 3 is formed on the growth surface 210 of the transparent substrate 2 , and the electrodes 31 A and 31 B are coupled to the connecting conductors 23 A and 23 B by wire bonding.
  • the LED structure 3 is disposed reversely and coupled to the transparent substrate 2 by the first electrode 31 A and the second electrode 31 B.
  • the first electrode 31 A and the second electrode 31 B may be directly coupled to the first connecting conductor 23 A and the second connecting conductor 23 B by welding or adhering.
  • the first electrode 31 A and the second electrode 31 B are disposed on different surfaces of the LED structure 3 , and the LED structure 3 is vertically disposed so as to respectively connect the electrodes 31 A and 31 B to the connecting conductors 23 A and 23 B.
  • the LED chip 1 in the present invention may further include a wavelength conversion layer 4 .
  • the wavelength conversion layer 4 may be selectively disposed on the first main surface 21 A or/and the second main surface 21 B, or directly on the LED structures 3 .
  • the wavelength conversion layer 4 may directly contact the LED structures 3 , or the wavelength conversion layer 4 may be separated from the LED structures 3 by a distance without directly contact.
  • the wavelength conversion layer 4 contains at least one kind of fluorescent powders such as organic fluorescent powder or inorganic fluorescent powder of garnet series, sulfate series or silicate series.
  • the wavelength conversion layer 4 may then be able to at least partially absorb a light beam emitted from the LED structure 3 and covert the light beam into another light beams having different wavelength range.
  • a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4 , and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the LED chip 1 .
  • a luminance of the first main surface 21 A is different from a luminance of the second main surface 21 B because a light source of the first main surface 21 A mainly comes from light beams directly emitted from the LED structure 3 , and a light source of the second main surface 21 B comes from light beams passing through the transparent substrate 2 .
  • concentrations of the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21 A and the wavelength conversion layer 4 disposed on the second main surface 21 B are arranged correspondingly.
  • a ratio of a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the first main surface 21 A to a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21 B may ranges from 1:0.5 to 1:3, or a ratio of the fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21 B to the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21 A may ranges from 1:0.5 to 1:3.
  • the luminance and the lighting effect of the LED chip 1 may become more appropriate for different applications accordingly.
  • a difference in color temperatures of light beams emitted from the first main surface 21 A and the second main surface 21 B may then be controlled to be smaller than or equal to 1500K.
  • a wavelength converting efficiency and light emitting performance of the LED chip 1 may then be enhanced.
  • FIG. 8 is a cross-sectional diagram illustrating a LED chip according to another preferred embodiment of the present invention.
  • the LED chip 10 in this embodiment includes a transparent substrate 2 , a plurality of LED structures 14 , an insulating layer 20 and a conductive pattern 22 .
  • the transparent substrate 2 has a growth surface 210 and a second main surface 21 B disposed opposite to each other.
  • the LED structures 14 are disposed or formed on the growth surface.
  • Each of the LED structures 14 includes a first electrode 16 and a second electrode 18 .
  • a light emitting surface 34 of the LED structures 14 uncovered by the transparent substrate 2 and a part of the growth surface 210 without the LED structures 14 form a first main surface 21 A where light emitted from.
  • the insulating layer 20 is disposed at least on a part of the LED structure 14 .
  • the conductive pattern 22 is disposed on the insulating layer 20 and electrically connected to at least a part of the first electrodes 16 and at least a part of the second electrodes 18 .
  • the conductive pattern 22 may be a metal line layout or a pattern formed by wire bonding, but the present invention is not limited to this. Other appropriate materials may also be used to form the conductive pattern 22 .
  • the LED structure 14 may include a first semiconductor layer 141 , an active layer 142 and a second semiconductor layer 143 .
  • the first semiconductor layer 141 , the active layer 142 and the second semiconductor layer 143 are sequentially formed on the transparent substrate 2 .
  • the first semiconductor layer 141 may be an N-type semiconductor layer
  • the second semiconductor layer 143 may be a P-type semiconductor layer, but not limited thereto.
  • Materials of the first semiconductor layer 141 , the active layer 142 , and the second semiconductor layer 143 are selected from IIIA nitride group such as aluminum nitride (AlN) or gallium nitride (GaN), but not limited thereto.
  • the LED chip 10 may further include a buffer layer 13 formed between the first semiconductor layer 141 and the transparent substrate 2 .
  • a material of the buffer layer 13 may also be selected from IIIA nitride group such as aluminum nitride or gallium nitride, but not limited thereto.
  • the first electrode 16 is electrically connected to the second semiconductor layer 143
  • the second electrode 18 is electrically connected to the first semiconductor layer 141 .
  • the first electrode 16 and the second electrode 18 may be metal electrodes, but not limited thereto.
  • the LED chip 10 may further include wavelength conversion layers 4 disposed on the transparent substrate 2 and the LED structures.
  • a light beam (not shown) emitted from the LED structure 14 may have a specific wavelength range.
  • the wavelength conversion layer 4 may convert the light beam having the specific wavelength range into another light beam having different wavelength range or having a wider wavelength rage, and the LED chip 10 may emit the converted light beam accordingly.
  • the LED structures 14 are connected in series through the conductive pattern 22 , but not limited thereto.
  • the insulating layer 20 , the conductive pattern 22 , the LED structures 14 (each of which including the first semiconductor layer 141 , the active layer 142 and the second semiconductor layer 143 ) and the buffer layer 13 can be fabricated in consecutive processes.
  • the first semiconductor layer 141 , the active layer 142 and the second semiconductor layer 143 are sequentially formed on the transparent substrate 2
  • the insulating layer 20 and the conductive pattern 22 can be further formed. A dicing process is carried out afterward.
  • Processes for fabricating the insulating layer 20 and the conductive pattern 22 may include photolithography and etching processes, but not limited thereto. Since the insulating layer 20 , the conductive pattern 22 and the LED structures 14 in the LED chip 10 of this embodiment are all fabricated through wafer-level processes, the related manufacturing cost may be reduced, and the corresponding LED chip 10 may have an improved reliability.
  • the second main surface 21 B may selectively has a non-planar structure 12 M.
  • the non-planar structure 12 M may includes various convex or concave structures, such as pyramid, cone, hemispheroid, triangular prism and so forth.
  • the non-planar structure 12 M may be arranged regularly or randomly.
  • a diamond-like carbon (DLC) film 25 may be optionally disposed on the second main surface 21 B, which is used to increase the thermal conduction ability and thermal dissipation ability.
  • DLC diamond-like carbon
  • the optical film 28 may be chosen from a material having a refractive index between a refractive index of the transparent substrate 2 and a refractive index of the diamond-like carbon film 25 or the wavelength conversion layer 4 , to increase the light output of the LED chip 10 .
  • FIG. 9 is an equivalent circuit diagram of a LED chip according to another preferred embodiment of the present invention.
  • the LED structures 14 in an LED chip 10 ′ are electrically connected in a hybrid way by the conductive pattern 22 ; that is, some are in series and the others are in parallel.
  • the LED structures are further electrically coupled to a power supply via the connecting conductors.
  • FIG. 10 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • a LED chip 310 in this invention includes the transparent substrate 2 , at least one LED structure 3 , a first connecting electrode 311 A, a second connecting electrode 311 B and at least one wavelength conversion layer 4 .
  • the LED structure 3 is disposed on the growth surface 210 of the transparent substrate 2 and forms a first main surface 21 A where light emitted from.
  • the LED structure 3 has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure 3 penetrate into the transparent substrate 2 .
  • At least a part of the penetrating light beams may be emitted from a second main surface 21 B which is opposite to the first main surface 21 A, and the other penetrating light beams may be emitted from other surfaces of the transparent substrate 2 , so as to form the LED chip 310 providing light in multi-directions.
  • the first connecting electrode 311 A and the second connecting electrode 311 B are respectively disposed on different sides of the transparent substrate 2 or on the same side of the transparent substrate 2 (not shown in FIG. 10 ).
  • the first connecting electrode 311 A and the second connecting electrode 311 B may be electrodes of the chip 310 respectively formed by extension parts of a first connecting conductor and a second connecting conductor on the transparent substrate 2 , and the first connecting electrode 311 A and the second connecting electrode 311 B are electrically connected to the LED structure 3 accordingly.
  • the wavelength conversion layer 4 at least covers the LED structure 3 and exposes at least a part of the first connecting electrode 311 A and the second connecting electrode 311 B. In other words, the wavelength conversion layer 4 may also be disposed without covering the first connecting electrode 311 A and the second connecting electrode 311 B.
  • the wavelength conversion layer 4 at least partially absorbs a light beam emitted from the LED structure 3 or/and the transparent substrate 2 , and converts the light beam into a light beam having another wavelength range.
  • the converted light and the light which are not absorbed by the wavelength conversion layer 4 may be mixed to extend the total wavelength range of the light beams emitted from the LED chip 310 and improve the light emitting performance of the LED chip 310 .
  • the LED chip 310 in this embodiment includes the first connecting electrode 311 A and the second connecting electrode 311 B respectively disposed on the transparent substrate 2 , traditional LED packaging process may be omitted and the LED chip 310 may be independently manufactured and then combined with an appropriate supporting base. Accordingly, the total manufacturing yield may be improved, the structure may be simplified and the applications of the corresponding supporting base may also be increased.
  • the illumination device 11 includes a supporting base 5 and the LED chip described above.
  • the transparent substrate 2 of the LED chip may stand on (or lie on) and be electrically coupled to the supporting base 5 .
  • a first angle ⁇ 1 exists between the transparent substrate 2 and the supporting base 5 .
  • the first angle ⁇ 1 may be fixed or be adjusted according to the light shape requirement of the illumination device.
  • the first angle ⁇ 1 ranges from 30 degrees to 150 degrees.
  • the supporting base 5 of the illumination device 11 in the present invention may further includes a circuit board 6 electrically coupled to a power supply.
  • the circuit board 6 is electrically coupled to a first connecting conductor and a second connecting conductor (not shown in FIG. 12 ) so as to be electrically connected to the LED structure 3 .
  • the power supply may then provide electricity to the LED ship 3 for emitting light via the circuit board 6 .
  • the LED structure 3 may also be electrically connected to the supporting base directly via the first connecting conductor and the second connecting conductor (not shown in FIG. 12 ) without the circuit board 6 , and the power supply may provides electricity to the LED ship 3 via the supporting base 5 .
  • the illumination device 11 of the present invention may further include a reflector or filter 8 disposed on the second main surface 21 B or the growth surface 210 .
  • the reflector or filter 8 may be used to reflect at least a part of light beams emitted from the LED structure 3 and passing through the transparent substrate 2 . At least a part of the reflected light beams may be changed to be emitted from the first main surface 21 A.
  • the reflector 8 may includes at least one metal layer or a Bragg reflector, but not limited thereto.
  • the Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes disposed in a stack configuration, or the Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes and a plurality of metal oxide layers disposed in a stack configuration.
  • the illumination device 11 of the present invention may further include a diamond-like carbon (DLC) film 9 disposed on the growth surface 210 or/and the second main surface 21 B of the transparent substrate 2 so as to enhance the thermal conductive ability and the heat dissipating performance.
  • DLC diamond-like carbon
  • FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 100 in this embodiment includes a LED chip 10 and a supporting base 26 .
  • the LED chip 10 may be at least partially embedded into the supporting base 26 , and the LED chip 10 is electrically connected to the electrode 30 and the electrode 32 of the supporting base 26 via the connecting conductors.
  • Driving voltage V+ and driving voltage V ⁇ may be provided through the electrodes 30 and 32 respectively to the LED chip 10 for emitting a light beam L.
  • the structure of the LED chip 10 may be similar to the LED chip of other embodiments described above, and the conductive pattern 22 is electrically connected to the first electrodes 16 and the second electrodes 18 of at least a part of the LED structures 14 so as to electrically connect at least some of the LED structures 14 in series or other approaches such as in parallel.
  • the conductive pattern 22 may be a metal line layout or a pattern formed by wire bonding, but not limited thereto. Other appropriate materials or structures may also be used to form the conductive pattern 22 .
  • the first electrode 16 and the second electrode 18 which are not connected to the conductive pattern 22 , are respectively and electrically connected to the electrode 30 and the electrode 32 of the supporting base 26 via the connecting conductors.
  • At least one of the LED structures 14 of the LED chip 10 emits the light beam L with a beam angle greater than 180 degrees or has a plurality of light emitting surfaces, and then the LED chip 10 may emits light beams from the first main surface 21 A and the second main surface 21 B. Further more, because some of the light beams may be emitted directly from the LED structure 14 and/or the other four side surfaces of the transparent substrate 2 , the LED chip 10 may accordingly emit light from six sides or in full directions.
  • the LED chip 10 in this embodiment may further includes a wavelength conversion layer 4 , a DLC film 25 and an optical film 28 disposed on the second main surface 21 B of the transparent substrate 2 .
  • the wavelength conversion layer 4 may further be disposed on the LED structures 14 or the first main surface 21 A.
  • the wavelength conversion layer 4 may covert at least a part of light beams emitted from the LED structures 14 into another light beams having different wavelength range so as to emit light with specific color or light having a wider wavelength range from the LED chip 10 .
  • the blue light beams when blue light beams are emitted from the LED structure 14 , a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4 , and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the LED chip 10 .
  • the DLC film 25 and the optical film 28 may be used to enhance the thermal dissipation ability and the light emitting efficiency of the LED structure 14 and the LED chip 10 .
  • the transparent substrate 2 preferably includes materials with high thermal conductivity, and heat generated from the LED structure 14 may be accordingly dissipated directly to the supporting base 26 , such that the high power LED structures can be applied in the illumination device of the present invention accordingly.
  • a power of each LED structure 14 in this embodiment may be equal to or lower than 0.2 watt, but not limited thereto.
  • FIG. 16 is a schematic diagram illustrating an illumination device according to a preferred embodiment of the present invention.
  • an illumination device 200 in this embodiment may further includes a support 51 configured to connect the LED chip 10 and the supporting base 26 .
  • the LED chip 10 is fixed on a side of the support 51 by a bonding layer 52 , and another side of the support 51 may be disposed on the supporting base 26 .
  • the support 51 may be flexible so as to form an adjustable angle between the LED chip 10 and the supporting base 26 , and the angle ranges from 30 degrees to 150 degrees.
  • a material of the support 51 may include one selected from aluminum, composite metallic material, copper conductor, electric wire, ceramic substrate, printed circuit board, or other appropriate materials.
  • the transparent substrate 2 in the present invention When the transparent substrate 2 in the present invention is disposed on a supporting base 5 , the transparent substrate 2 may be inserted or bonded to the supporting base 5 .
  • the transparent substrate 2 When the transparent substrate 2 is disposed on the supporting base 5 , the transparent substrate 2 is inserted in to a single socket 61 of the supporting base 5 , and the LED chip may be electrically coupled to the single socket 61 via connecting conductors.
  • the LED structures (not shown in FIG. 17 ) on the transparent substrate 2 have to be electrically coupled to a power supply from or through the supporting base 5 , and at least part of the conductive pattern or the connecting conductors are extended to an edge of the transparent substrate 2 and integrated in to an connecting finger having a plurality of conductive contact sheets or an electrically connecting port such as the connecting electrodes 311 A and 311 B described above (not shown in FIG. 17 ).
  • the LED structure When the transparent substrate 2 is inserted into the socket 61 , the LED structure (not shown in FIG. 17 ) may then receive electricity from or through the supporting base 5 , and the transparent substrate 2 may be fixed by the socket 61 of the supporting base 5 accordingly.
  • FIG. 18 is a schematic diagram illustrating the transparent substrate 2 inserted into multi sockets of the supporting base 5 .
  • the transparent substrate 2 has a dual-pin structure.
  • One of the pins may be configured as a positive electrode of the chip, and another one of the pins may be configured as a negative electrode of the chip.
  • Both of the pins comprise at least a conductive contact sheet respectively so as to act as connecting ports.
  • at least one electrically connecting port is disposed on the pin.
  • there are at least two sockets 61 having corresponding shape and size with the pins so as to smoothly insert the transparent substrate 2 into the supporting base 5 and provide electricity to the LED structure.
  • the transparent substrate 2 is combined with the supporting base 5 .
  • metal materials such as gold, tin, indium, bismuth or silver may be used in combining or welding the transparent substrate 2 and the supporting base 5 .
  • conductive silica gel or epoxy material may also be used in fixing the transparent substrate 2 on the supporting base 5 .
  • the conductive pattern and the connecting conductors of the LED chip may be electrically connected to the supporting base via the bonding layer accordingly.
  • the supporting base 5 of the illumination device 11 described in the present invention may be a substrate comprising one selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board.
  • the support 62 may be separated from the supporting base 5 , or the support 62 and the supporting base 5 are monolithically integrated.
  • the LED chip may be electrically coupled to the support 62 by bonding, and a bonding layer 63 is used to fix the transparent substrate 2 on the supporting base 5 .
  • the first angle ⁇ 1 is maintained between the transparent substrate 2 and a surface of the supporting base 5 without supports.
  • the LED chip may also be disposed on the surface of the supporting base 5 without supports so as to enhance the light emitting performance of the illumination device 11 . Additionally, the LED chip may also be inserted and connected to the support 62 (not shown in FIG. 20 and FIG. 21 ), wherein a connector may be used to connect the LED chip and the support (and/or the support and the supporting base) so as to fix the transparent substrate 2 on the supporting base 5 . Because the supporting base 5 and the support 62 are flexible, it is more convenient to apply the present invention to different applications. Moreover, the color variety of the illumination device 11 may be enhanced for different demands by combining using LED chips having different light colors.
  • an illumination device in this embodiment includes at least one LED chip 1 and a supporting base 5 .
  • the supporting base 5 includes at least one support 62 and at least one circuit pattern P.
  • An end of the transparent substrate of the LED chip 1 is electrically coupled to the support 62 so as to avoid or reduce the shielding influence caused by the support 62 for light emitting from the LED chip 1 .
  • the supporting base 5 may comprise one selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board.
  • the support 62 may be formed by cutting and bending a part of the supporting base 5 to form an angle (as the first angle ⁇ 1 shown in FIG. 20 and FIG. 21 ).
  • the circuit pattern P is disposed on supporting base 5 , and the circuit pattern P has at least one set of electrical port to be electrically connected to a power supply. Another part of the circuit pattern P extends on the support 62 so as to be electrically connected to the LED chip 1 , and the LED chip 1 may than be electrically connected to the power supply via the circuit pattern P of the supporting base 5 .
  • the supporting base 5 may further include at least one hole H or at least one gap G, and fixing devices such as screws, nails or bolts may be used to combine the supporting base 5 with other device via the hole H or the gap G according to the application conditions of the illumination device. Meanwhile, the hole H or the gap G may also be used to increase the heat radiating area and enhance the heat dissipation capability of the illumination device.
  • FIG. 23 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention.
  • a device frame 322 in this embodiment includes a supporting base 5 and at least one support 62 .
  • the support 62 in this embodiment includes at least one stripe part 342 and an opening 330 .
  • the electrode 30 and the electrode 32 are respectively disposed on two sides of the opening 330 .
  • the stripe part 342 forms at least one wall of the opening 330 .
  • One LED chip described in the present invention is disposed correspondingly to the opening 330 and electrically coupled to the support 62 .
  • the connecting conductors of the LED chip is electrically connected to the electrode 30 and 32 so as to drive the LED chip by a power supply via the support 62 and the circuit pattern on the supporting base 5 .
  • a size of the opening 330 may not be smaller than a main light emitting surface of the LED chip so as to prevent light beams emitted from the LED chip from being blocked by the support 62 .
  • An interface between the support 62 and the supporting base 5 may be adjustable so as to adjust the angle between the support 62 and the supporting base 5 as required.
  • FIG. 24 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 302 shown in FIG. 24 further includes at least one support 62 having a plurality of openings 330 .
  • the openings 330 are respectively disposed on two opposite sides of the support 62 , and the stripe part 342 forms at least one wall of each opening 330 .
  • the LED chip 310 are disposed correspondingly to the openings 330 , and the conductive pattern or the connecting electrodes (not shown in FIG. 25 ) of each LED chip 310 are respectively disposed correspondingly and electrically connected to the electrode 30 and 32 .
  • the illumination device 302 in this embodiment may further include a plurality of the supports 62 .
  • Angles between the supporting base 5 and the supports 62 with the LED chip disposed on may be modified respectively.
  • an angle between the supporting base 5 and at least one of the supports 62 may be different from an angle between the supporting base 5 and another one of the supports 62 so as to perform required light emitting effects, but not limited thereto.
  • LED chips emitting light having different wavelength ranges may be disposed on an identical support or on different supports so as to enrich the color effect of the illumination device.
  • a plurality of the LED chips comprising the transparent substrates are disposed on the supporting bases detailed above or on other supporting structures.
  • a point-symmetric distribution or a line-symmetric distribution may be applied.
  • the LED chips comprising the transparent substrates may be point-symmetrically disposed on the supporting structure or line-symmetrically disposed on the supporting structure.
  • FIGS. 25-28 Please refer to FIGS. 25-28 .
  • the LED chips are disposed on the supporting structures having different shapes.
  • the light beams emitted from the illumination devices 11 may be uniform because of the point-symmetric distribution or the line-symmetric distribution (the LED structures are not shown in FIGS. 25-28 ).
  • the light emitting effects of the illumination devices 11 may be further improved by adjusting the first angle described above.
  • the LED chips are point-symmetrically arranged and form an angle between each other in 90 degrees. Such that at least two of the LED chips face any one of the four sides of the illumination device 11 .
  • the angle between the LED chips is smaller than 90 degrees.
  • the angle between the LED chips is larger than 90 degrees.
  • the LED chips may be asymmetrically disposed and at least a part of the LED chips may be disposed in a crowd or separately disposed so as to perform required light shape according to different applications of the illumination device.
  • FIG. 29 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 301 includes a LED chip 310 and a support 321 .
  • the support 321 includes an opening 330 , and the LED chip 310 is disposed correspondingly to the opening 330 .
  • an external part of the support 321 may be work as a pin or be bent to form a connecting pad required in surface mounting so as to be fixed and electrically connected to other electrical circuit units.
  • a light emitting surface of the LED chip 310 is disposed in the opening 330 , and the illumination device 301 may still emit light from multi sides or six sides accordingly whether the support 321 is transparent or not.
  • the illumination device includes a lamp housing 7 having a tube shape, at least one LED chip 1 and a supporting structure 60 .
  • the LED chip 1 is disposed on the supporting structure 60 , and at least a part of the LED chip 1 is disposed in space formed by the lamp housing 7 .
  • FIG. 31 When more LED chips 1 are disposed in the lamp housing 7 , the first main surfaces 21 A of the LED chips 1 are arranged separately and not parallel to one another. Additionally, the LED chips 1 are at least partially disposed in space formed by the lamp housing 7 , and the LED chips 1 are not closely adjacent to an inner wall of the lamp housing 7 .
  • a distance D between the LED chip 1 and the lamp housing 7 may be equal to or larger than 500 micrometers.
  • the lamp housing 7 may also be formed by filling glue, and the lamp housing 7 may at least partially cover and directly contact the LED chip 1 .
  • the lamp housing 7 of the illumination device has at least one covering layer 71 .
  • the covering layer 71 may be a billboard, signboard or other display devices requiring backlight sources.
  • Light provided from the first main surface 21 A and the second main surface 21 B of the LED chip 1 in the present invention may be applied as a light source of a backlight for the covering layer 71 .
  • An second angle between the LED chip 1 and the covering layer 71 ranges between 0 degree and 45 degrees (the second angle is 0 degree in FIG. 32 and not shown accordingly).
  • the LED chips 1 are at least partially disposed in space formed by the lamp housing 7 and basically not closely adjacent to the inner wall of the lamp housing 7 , and then light beams generated by a light emitting plate/sheet or the LED chip comprising the transparent substrate and the LED structure providing light in multi-directions can uniformly pass through the lamp housing.
  • a distance D between the LED chip 1 and the lamp housing 7 may be equal to or larger than 500 micrometers.
  • the lamp housing 7 may also be formed by filling glue, and the lamp housing 7 may at least partially cover and directly contact the LED chip 1 .
  • the illumination devices in this series of embodiments may further include a lamp housing 7 having a bulb shape and a base 64 .
  • the illumination device in this embodiment further includes a lamp housing 7 having a bulb shape, and a supporting base 5 further disposed on a base 64 .
  • the base 64 may be a traditional lamp base.
  • the lamp housing 7 may be coupled to the base 64 and cover the LED chip and the supporting base 5 , or the lamp housing 7 may be directly coupled to the supporting base 5 and cover the LED chip.
  • the shape of the base 64 may be modified as required.
  • the base 64 may be a platform or include another supporting protrusion (as shown in FIG.
  • the wavelength conversion layer 4 is coated on an inner wall of the lamp housing 7 so as to convert at least a part of light beams generated from the LED structure 3 into another light beams having different wavelength range before leaving the lamp housing 7 .
  • FIG. 36 a dual housing design including the lamp housing 7 and a lamp housing 7 ′ is disclosed. Space S exists between the lamp housing 7 and the lamp housing 7 ′. The space S, the lamp housing 7 and the lamp housing 7 ′ may be further modified for performing different patterns and colors of light from the illumination device.
  • FIG. 37 is a schematic diagram illustrating a light bar according to another preferred embodiment of the present invention.
  • FIG. 38 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • a light bar 323 in this embodiment includes a plurality of openings 330 .
  • the light bar 323 has an extending direction X, and the openings 330 are disposed along the extending direction X.
  • a plurality of the LED chips providing light in multi-directions are disposed correspondingly to the openings 330 of the light bar 323 , and the light bar 323 can emit light accordingly, but not limited thereto.
  • the light bar 323 may further include a plurality of electrodes 30 and 32 , a first external connecting electrode 350 A and a second external connecting electrode 350 B.
  • the electrical polarity of the electrode 30 is different from the electrode 32 .
  • the electrodes 30 and the electrodes 32 are respectively disposed on the same side or different sides of each opening 330 .
  • the first external connecting electrode 350 A and the second external connecting electrode 350 B are electrically connected to the electrodes 30 and the electrodes 32 respectively.
  • the first external connecting electrode 350 A and the second external connecting electrode 350 B are respectively disposed on the same side or different sides of the light bar 323 . As shown in FIG. 37 and FIG.
  • an illumination device 303 may include the light bar 323 described above and a device frame 360 , wherein the light bar 323 with LED chips 310 may be vertically disposed, horizontally disposed or inclinedly disposed on the device frame 360 .
  • the first connecting electrode 350 A and 350 B of the light bar 323 may be electrically connected to a power supply via the device frame 360 , but not limited thereto.
  • other appropriate optical films such as diffusion films may also be applied in the illumination device 303 so as to modify the light emitting effect of the LED chips 310 disposed in the device frame 360 .
  • FIG. 39 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • an illumination device 304 includes a plurality of the LED chips 310 and a supporting base 324 .
  • the supporting base 324 includes a plurality of openings 330 , and the openings 330 are disposed as an array.
  • the LED chips 310 are disposed correspondingly to the openings 330 .
  • the connecting approach of the LED chips 310 on the openings 330 may be similar to that described in the embodiments detailed above, and will not be redundantly described.
  • the supporting base 324 may further include a first external connecting electrode 350 A and a second external connecting electrode 350 B so as to be electrically connected to other electrical devices.
  • the illumination device 304 in this embodiment may be used as a billboard, signboard or a backlight module, and the supporting base 324 is preferably transparent, but not limited thereto.

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Abstract

A sapphire substrate configured to form a light emitting diode (LED) chip providing light in multi-directions, a LED chip and an illumination device are provided in the present invention. The sapphire substrate includes a growth surface and a second main surface opposite to each other. A thickness of the sapphire substrate is thicker than or equal to 200 micrometers. The LED chip includes the sapphire substrate and at least one LED structure. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with a part of the growth surface without the LED structures. At least a part of light beams emitted from the LED structure pass through the sapphire substrate and emerge from the second main surface. The illumination device includes at least one LED chip and a supporting base. The LED chip is disposed on the supporting base.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to a sapphire substrate, a light emitting diode chip, and an illumination device, and more particularly, to a sapphire substrate configured to form a light emitting diode chip providing light in multi-directions, a light emitting diode chip, and an illumination device including the light emitting diode chip.
  • 2. Description of the Prior Art
  • A light beam emitted from a light emitting diode (LED) is a kind of directional light source, which is different from a dispersive light source of a conventional bulb. Accordingly, applications of LED are limited. For instance, the conventional LED can not or may be hard to provide required lighting effect for indoor and outdoor illumination applications. Additionally, conventional LED illumination devices emit light beams from a single side and luminous efficiency of the conventional LED illumination device is relatively low accordingly.
  • SUMMARY OF THE INVENTION
  • It is one of the objectives of the present invention to provide a sapphire substrate configured to form a light emitting diode (LED) chip providing light in multi-directions, a light emitting diode chip, and an illumination device including the light emitting diode chip. The purposes of luminous efficiency enhancement, light shape improvement, and cost reduction may then be achieved.
  • A preferred embodiment of the present invention provides a sapphire substrate configured to form a light emitting diode chip providing light in multi-directions. The sapphire substrate includes a growth surface and a second main surface opposite to each other. A thickness of the sapphire substrate is thicker than or equal to 200 micrometers.
  • A preferred embodiment of the present invention provides a light emitting diode (LED) chip. The LED chip includes a transparent substrate, a plurality of LED structures, an insulating layer and a conductive pattern. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structures are disposed on the growth surface and form a first main surface where light emitted from with at least a part of the growth surface without the LED structures. Each of the LED structures includes a first electrode and a second electrode. The insulating layer is disposed on at least some of the LED structures. The conductive pattern is disposed on the insulating layer and electrically connected to at least some of the first electrodes and at least some of the second electrodes. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface.
  • Another preferred embodiment of the present invention provides a LED chip. The LED chip includes a transparent substrate and at least one LED structure. A material of the transparent substrate includes sapphire, and the transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structure is disposed on the growth surface The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • Another preferred embodiment of the present invention provides a LED chip. The LED chip includes a transparent substrate, at least one LED structure and a wavelength conversion layer. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface. The wavelength conversion layer is at least disposed on the LED structure or the second main surface. The wavelength conversion layer at least partially absorbs a light beam emitted from the LED structure and converts the light beam into another light beams having different wavelength range.
  • Another preferred embodiment of the present invention provides a LED chip. The LED chip includes a transparent substrate and a plurality of LED structures. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structures are disposed on the growth surface. A light emitting surface of each LED structure uncovered by the transparent substrate and at least a part of the growth surface without the LED structures form a first main surface where light emitted from. Each of the LED structures has a beam angle greater than 180 degrees. Light emitted from at least one of the LED structures passes through the transparent substrate and emerges from the second main surface. An area of the first main surface or an area of the second main surface is larger than 5 times of a total area formed from at least one of the light emitting surfaces of each LED structure.
  • Another preferred embodiment of the present invention provides a LED chip. The LED chip includes a transparent substrate, at least one diamond-like carbon (DLC) film, and at least one LED structure. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The DLC film is disposed on the transparent substrate. The LED structure is disposed on the growth surface. A light emitting surface of the LED structure uncovered by the transparent substrate and at least a part of the growth surface without the LED structure form a first main surface where light emitted from. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and emerge from the second main surface.
  • Another preferred embodiment of the present invention provides a LED chip. The LED chip includes a transparent substrate, at least one LED structure and a reflector. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The reflector is disposed on the second main surface. The LED structure is disposed on the growth surface. A light emitting surface of the LED structure uncovered by the transparent substrate and at least part of the growth surface without the LED structure form a first main surface where light emitted from. The LED structure has a beam angle greater than 180 degree.
  • Another preferred embodiment of the present invention provides a LED chip. The LED chip includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate. The first connecting conductor and the second connecting conductor are electrically connected to the LED structure.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a supporting base and an LED chip providing light in multi-directions, wherein the LED chip is disposed on the supporting base.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a LED chip and a support. The LED chip includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate. The first connecting conductor and the second connecting conductor are electrically connected to the LED structure. The support includes at least one opening, and the LED chip is disposed correspondingly to the opening.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a plurality of LED chips and a device frame. Each of the LED chips includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate. The first connecting conductor and the second connecting conductor are electrically connected to the LED structure. The device frame includes a supporting base and a plurality of supports extending outward from the supporting base. Each of the supports includes at least one opening, and the LED chips are disposed correspondingly to at least some of the openings.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a plurality of LED chips and a light bar. Each of the LED chips includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate. The first connecting conductor and the second connecting conductor are electrically connected to the LED structure. The light bar includes a plurality of openings. The light bar has an extending direction, and the openings are disposed along the extending direction. The LED chips are disposed correspondingly to at least some of the openings.
  • Another preferred embodiment of the present invention provides an illumination device. The illumination device includes a plurality of LED chips and a supporting base. Each of the LED chips includes a transparent substrate, at least one LED structure, a first connecting conductor and a second connecting conductor. The transparent substrate has a growth surface and a second main surface disposed opposite to each other. The LED structure is disposed on the growth surface and forms a first main surface where light emitted from with at least a part of the growth surface without the LED structure. The LED structure has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the transparent substrate and are emitted from the second main surface. The first connecting conductor and the second connecting conductor are respectively disposed on two sides of the transparent substrate. The first connecting conductor and the second connecting conductor are electrically connected to the LED structure. The supporting base includes a plurality of openings. The openings are disposed as an array. The LED chips are disposed correspondingly to at least some of the openings.
  • Another preferred embodiment of the present invention provides a device frame of an illumination device. The device frame includes a supporting base and a plurality of supports. Each of the supports extends from the supporting base. Each of the supports includes at least one opening and a plurality of electrodes disposed on two sides of the opening.
  • In the LED chip of the present invention, the LED structure is disposed on the transparent substrate, and the transparent substrate allows the light beam emitted by the LED structure passing through. Accordingly, the LED chip in the present invention can emit light in at least multi-directions or all directions. The luminous efficiency of the illumination device may be accordingly enhanced, and the light shape of the LED illumination device may also be improved. Additionally, since the insulating layer, the conductive pattern and the LED structures of the LED chip in the present invention can be fabricated through wafer-level processes, the related manufacturing cost may be reduced, and the corresponding LED chip may have an improved reliability.
  • These and other objectives of the present invention will no doubt become obvious to those of ordinary skill in the art after reading the following detailed description of the preferred embodiment that is illustrated in the various figures and drawings.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a light emitting diode (LED) chip according to a preferred embodiment of the present invention.
  • FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between a light emitting diode structure and conductors according to a preferred embodiment of the present invention.
  • FIG. 6 and FIG. 7 are schematic diagrams illustrating a disposition of a wavelength conversion layer according to a preferred embodiment of the present invention.
  • FIG. 8 is a cross-sectional diagram illustrating a LED chip according to another preferred embodiment of the present invention.
  • FIG. 9 is an equivalent circuit diagram of a LED chip according to another preferred embodiment of the present invention.
  • FIG. 10 is a schematic diagram illustrating a LED chip according to another preferred embodiment of the present invention.
  • FIG. 11 is a schematic diagram illustrating a supporting base according to a preferred embodiment of the present invention.
  • FIG. 12 is a schematic diagram illustrating a circuit board according to a preferred embodiment of the present invention.
  • FIG. 13 is a schematic diagram illustrating a reflector according to a preferred embodiment of the present invention.
  • FIG. 14 is a schematic diagram illustrating a diamond-like carbon film according to a preferred embodiment of the present invention.
  • FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 16 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 17-19 are schematic diagrams illustrating a transparent substrate inserted or adhered to a supporting base according to a preferred embodiment of the present invention.
  • FIG. 20 and FIG. 21 are schematic diagrams illustrating a transparent substrate adhered to a supporting base with supports according to a preferred embodiment of the present invention.
  • FIG. 22 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 23 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention.
  • FIG. 24 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIGS. 25-28 are schematic diagrams illustrating transparent substrates point-symmetrically or line-symmetrically disposed on a supporting structure according to a preferred embodiment of the present invention.
  • FIG. 29 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 30 and FIG. 31 are schematic diagrams illustrating a lamp housing according to a preferred embodiment of the present invention.
  • FIG. 32 is a top-view diagram illustrating an advertisement lamp housing according to a preferred embodiment of the present invention.
  • FIGS. 33-36 are schematic diagrams illustrating a bulb lamp according to a preferred embodiment of the present invention.
  • FIG. 37 is a schematic diagram illustrating a light bar according to another preferred embodiment of the present invention.
  • FIG. 38 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • FIG. 39 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention.
  • DETAILED DESCRIPTION
  • Please refer to FIG. 1 and FIG. 2. FIG. 1 and FIG. 2 are schematic structure diagrams illustrating a light emitting diode (LED) chip or a light emitting plate according to a preferred embodiment of the present invention. As shown in FIG. 1 and FIG. 2, a LED chip 1 includes a transparent substrate 2, a growth surface 210, a first main surface 21A, a second main surface 21B and at least one LED structure 3 providing light in multi-directions. The transparent substrate 2, which is a sheet type substrate, has two main surfaces, and one of the surfaces is the growth surface 210. The LED structure 3 capable of emitting light is disposed on the growth surface 210. A light emitting surface 34 of the LED structure 3 uncovered by the transparent substrate 2 and at least a part of the growth surface 210 without the LED structure form the first main surface 21A where light emitted from. The second main surface 21B is another main surface of the transparent substrate 2 without the LED structures 3. The disposition described above may also be reversed, or the LED structure 3 may be disposed on the two surfaces of the transparent substrate 2. In one embodiment, LED structures 3 may be disposed on the growth surface 210 of the transparent substrate 2 interlacedly corresponding to other LED structures 3 disposed on the second main surface 21B, such that light beams emitted from LED structure 3 on one surface of the transparent substrate 2 would not be blocked by other LED structure 3 on another surface of the transparent substrate 2. The luminance of the LED chip 1 may be increased accordingly. A material of the transparent substrate 2 may comprise one selected from aluminum oxide (Al2O3), sapphire containing aluminum oxide, silicon carbide (SiC), glass, plastic or rubber. Preferably, the transparent substrate may be a sapphire substrate in a preferred embodiment of the present invention. The structure of the sapphire substrate is substantially single crystal. The sapphire substrate has properties of higher light transmittance and better heat dissipation capability. The sapphire substrate may be used to increase the life time of the LED chip 1. However, the conventional sapphire substrate used for forming conventional LED structure may be fragile when applied in the present invention. According to experiment results of the present invention, the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness thicker than or equal to 200 micrometers so as to perform better reliability, supporting performance and transparency. For emitting light in multi-directions, including dual-directions or full directions, from the LED chip 1, the LED structure 3 in this invention preferably has a beam angle greater than 180 degrees. Accordingly, the LED structure 3 disposed on the transparent substrate 2 may emit light beams from the light emitting surface 34 toward a direction away from the transparent substrate 2, and the LED structure 3 may also emit light beams at least partially entering the transparent substrate 2. The light beams entering the transparent substrate 2 may emerge from the second main surface 21B opposite to the first main surface 21A, and the light beams entering the transparent substrate 2 may also be emitted from a part of the growth surface 210 without LED structures 3 or emitted from other surfaces of the transparent substrate 2. The LED chip 1 may then be capable of emitting light in multi-directions including dual-directions or full directions. In this invention, an area of the first main surface 21A or an area of the second main surface 21B is larger than 5 times of a total area formed from at least one of the light emitting surfaces 34 of each LED structure, and this is a preferred proportion according to the consideration of both the luminous efficiency and the heat dissipation performance.
  • Additionally, in another preferred embodiment of the present invention, a difference in color temperatures of light beams emitted from the first main surface 21A and the second main surface 21B of the LED chip 1 is smaller than or equal to 1500K so as to uniform light emitting effects of the LED chip 1. In addition, under the thickness condition of the transparent substrate 2 mentioned above, a light transmittance of the transparent substrate 3 is larger than or equal to 70% for light beams having a wavelength range larger than or equal to 420 nanometers, or light beams having a wavelength rage smaller than or equal to 470 nanometers.
  • The present invention is not limited to the embodiment described above. The following description will detail the different embodiments in the present invention. To simplify the description, similar components in each of the following embodiments are marked with identical symbols. For making it easier to understand the differences between the embodiments, the following description will detail the dissimilarities among different embodiments and the identical features will not be redundantly described.
  • Please refer to FIGS. 3-5. In the present invention, the LED structure 3 includes a first electrode 31A and a second electrode 31B for receiving electricity. The first electrode 31A and the second electrode 31B are respectively and electrically connected to a first connecting conductor 23A and a second connecting conductor 23B on the transparent substrate 2. FIGS. 3-5 are schematic diagrams illustrating different types of electrically coupling approaches between the light emitting diode structure 3 and the conductors. FIG. 3 illustrates a horizontal type LED structure, the LED structure 3 is formed on the growth surface 210 of the transparent substrate 2, and the electrodes 31A and 31B are coupled to the connecting conductors 23A and 23B by wire bonding. FIG. 4 illustrates a flip structure type LED structure 3, and the LED structure 3 is disposed reversely and coupled to the transparent substrate 2 by the first electrode 31A and the second electrode 31B. The first electrode 31A and the second electrode 31B may be directly coupled to the first connecting conductor 23A and the second connecting conductor 23B by welding or adhering. As shown in FIG. 5, the first electrode 31A and the second electrode 31B are disposed on different surfaces of the LED structure 3, and the LED structure 3 is vertically disposed so as to respectively connect the electrodes 31A and 31B to the connecting conductors 23A and 23B.
  • Please refer to FIG. 6 and FIG. 7. The LED chip 1 in the present invention may further include a wavelength conversion layer 4. The wavelength conversion layer 4 may be selectively disposed on the first main surface 21A or/and the second main surface 21B, or directly on the LED structures 3. The wavelength conversion layer 4 may directly contact the LED structures 3, or the wavelength conversion layer 4 may be separated from the LED structures 3 by a distance without directly contact. The wavelength conversion layer 4 contains at least one kind of fluorescent powders such as organic fluorescent powder or inorganic fluorescent powder of garnet series, sulfate series or silicate series. The wavelength conversion layer 4 may then be able to at least partially absorb a light beam emitted from the LED structure 3 and covert the light beam into another light beams having different wavelength range. For example, when blue light beams are emitted from the LED structure 3, a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4, and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the LED chip 1. Additionally, a luminance of the first main surface 21A is different from a luminance of the second main surface 21B because a light source of the first main surface 21A mainly comes from light beams directly emitted from the LED structure 3, and a light source of the second main surface 21B comes from light beams passing through the transparent substrate 2. Therefore, in a LED chip 1 of another preferred embodiment, concentrations of the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21A and the wavelength conversion layer 4 disposed on the second main surface 21B are arranged correspondingly. Preferably, a ratio of a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the first main surface 21A to a fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21B may ranges from 1:0.5 to 1:3, or a ratio of the fluorescent powder concentration in the wavelength conversion layer 4 disposed on the second main surface 21B to the fluorescent powders in the wavelength conversion layer 4 disposed on the first main surface 21A may ranges from 1:0.5 to 1:3. The luminance and the lighting effect of the LED chip 1 may become more appropriate for different applications accordingly. A difference in color temperatures of light beams emitted from the first main surface 21A and the second main surface 21B may then be controlled to be smaller than or equal to 1500K. A wavelength converting efficiency and light emitting performance of the LED chip 1 may then be enhanced.
  • Please refer to FIG. 8. FIG. 8 is a cross-sectional diagram illustrating a LED chip according to another preferred embodiment of the present invention. As shown in FIG. 8, the LED chip 10 in this embodiment includes a transparent substrate 2, a plurality of LED structures 14, an insulating layer 20 and a conductive pattern 22. The transparent substrate 2 has a growth surface 210 and a second main surface 21B disposed opposite to each other. The LED structures 14 are disposed or formed on the growth surface. Each of the LED structures 14 includes a first electrode 16 and a second electrode 18. A light emitting surface 34 of the LED structures 14 uncovered by the transparent substrate 2 and a part of the growth surface 210 without the LED structures 14 form a first main surface 21A where light emitted from. The insulating layer 20 is disposed at least on a part of the LED structure 14. The conductive pattern 22 is disposed on the insulating layer 20 and electrically connected to at least a part of the first electrodes 16 and at least a part of the second electrodes 18. The conductive pattern 22 may be a metal line layout or a pattern formed by wire bonding, but the present invention is not limited to this. Other appropriate materials may also be used to form the conductive pattern 22.
  • The LED structure 14 may include a first semiconductor layer 141, an active layer 142 and a second semiconductor layer 143. The first semiconductor layer 141, the active layer 142 and the second semiconductor layer 143 are sequentially formed on the transparent substrate 2. Preferably, the first semiconductor layer 141 may be an N-type semiconductor layer, and the second semiconductor layer 143 may be a P-type semiconductor layer, but not limited thereto. Materials of the first semiconductor layer 141, the active layer 142, and the second semiconductor layer 143 are selected from IIIA nitride group such as aluminum nitride (AlN) or gallium nitride (GaN), but not limited thereto. The LED chip 10 may further include a buffer layer 13 formed between the first semiconductor layer 141 and the transparent substrate 2. A material of the buffer layer 13 may also be selected from IIIA nitride group such as aluminum nitride or gallium nitride, but not limited thereto. The first electrode 16 is electrically connected to the second semiconductor layer 143, and the second electrode 18 is electrically connected to the first semiconductor layer 141. The first electrode 16 and the second electrode 18 may be metal electrodes, but not limited thereto.
  • In addition, the LED chip 10 may further include wavelength conversion layers 4 disposed on the transparent substrate 2 and the LED structures. A light beam (not shown) emitted from the LED structure 14 may have a specific wavelength range. The wavelength conversion layer 4 may convert the light beam having the specific wavelength range into another light beam having different wavelength range or having a wider wavelength rage, and the LED chip 10 may emit the converted light beam accordingly.
  • In this embodiment, the LED structures 14 are connected in series through the conductive pattern 22, but not limited thereto. In addition, the insulating layer 20, the conductive pattern 22, the LED structures 14 (each of which including the first semiconductor layer 141, the active layer 142 and the second semiconductor layer 143) and the buffer layer 13 can be fabricated in consecutive processes. In other words, after the buffer layer 13, the first semiconductor layer 141, the active layer 142 and the second semiconductor layer 143 are sequentially formed on the transparent substrate 2, the insulating layer 20 and the conductive pattern 22 can be further formed. A dicing process is carried out afterward. Processes for fabricating the insulating layer 20 and the conductive pattern 22 may include photolithography and etching processes, but not limited thereto. Since the insulating layer 20, the conductive pattern 22 and the LED structures 14 in the LED chip 10 of this embodiment are all fabricated through wafer-level processes, the related manufacturing cost may be reduced, and the corresponding LED chip 10 may have an improved reliability.
  • Additionally, in order to increase intensity and distribution uniformity of the light emitted from the transparent substrate 2, the second main surface 21B may selectively has a non-planar structure 12M. The non-planar structure 12M may includes various convex or concave structures, such as pyramid, cone, hemispheroid, triangular prism and so forth. The non-planar structure 12M may be arranged regularly or randomly. Furthermore, a diamond-like carbon (DLC) film 25 may be optionally disposed on the second main surface 21B, which is used to increase the thermal conduction ability and thermal dissipation ability. Furthermore, there may be an optical film 28 between the second main surface 21B and the diamond-like carbon film 25. Preferably, the optical film 28 may be chosen from a material having a refractive index between a refractive index of the transparent substrate 2 and a refractive index of the diamond-like carbon film 25 or the wavelength conversion layer 4, to increase the light output of the LED chip 10.
  • Please refer to FIG. 9 accompanied with FIG. 8 and other figures described above. FIG. 9 is an equivalent circuit diagram of a LED chip according to another preferred embodiment of the present invention. As shown in FIG. 9, in this modified embodiment, the LED structures 14 in an LED chip 10′ are electrically connected in a hybrid way by the conductive pattern 22; that is, some are in series and the others are in parallel. The LED structures are further electrically coupled to a power supply via the connecting conductors.
  • Please refer to FIG. 10. FIG. 10 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 10, a LED chip 310 in this invention includes the transparent substrate 2, at least one LED structure 3, a first connecting electrode 311A, a second connecting electrode 311B and at least one wavelength conversion layer 4. The LED structure 3 is disposed on the growth surface 210 of the transparent substrate 2 and forms a first main surface 21A where light emitted from. In this embodiment, the LED structure 3 has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure 3 penetrate into the transparent substrate 2. At least a part of the penetrating light beams may be emitted from a second main surface 21B which is opposite to the first main surface 21A, and the other penetrating light beams may be emitted from other surfaces of the transparent substrate 2, so as to form the LED chip 310 providing light in multi-directions. The first connecting electrode 311A and the second connecting electrode 311B are respectively disposed on different sides of the transparent substrate 2 or on the same side of the transparent substrate 2 (not shown in FIG. 10). The first connecting electrode 311A and the second connecting electrode 311B may be electrodes of the chip 310 respectively formed by extension parts of a first connecting conductor and a second connecting conductor on the transparent substrate 2, and the first connecting electrode 311A and the second connecting electrode 311B are electrically connected to the LED structure 3 accordingly. The wavelength conversion layer 4 at least covers the LED structure 3 and exposes at least a part of the first connecting electrode 311A and the second connecting electrode 311B. In other words, the wavelength conversion layer 4 may also be disposed without covering the first connecting electrode 311A and the second connecting electrode 311B. The wavelength conversion layer 4 at least partially absorbs a light beam emitted from the LED structure 3 or/and the transparent substrate 2, and converts the light beam into a light beam having another wavelength range. The converted light and the light which are not absorbed by the wavelength conversion layer 4 may be mixed to extend the total wavelength range of the light beams emitted from the LED chip 310 and improve the light emitting performance of the LED chip 310. Because the LED chip 310 in this embodiment includes the first connecting electrode 311A and the second connecting electrode 311B respectively disposed on the transparent substrate 2, traditional LED packaging process may be omitted and the LED chip 310 may be independently manufactured and then combined with an appropriate supporting base. Accordingly, the total manufacturing yield may be improved, the structure may be simplified and the applications of the corresponding supporting base may also be increased.
  • Please refer to FIG. 11. An illumination device 11 is provided in this embodiment. The illumination device 11 includes a supporting base 5 and the LED chip described above. The transparent substrate 2 of the LED chip may stand on (or lie on) and be electrically coupled to the supporting base 5. A first angle θ1 exists between the transparent substrate 2 and the supporting base 5. The first angle θ1 may be fixed or be adjusted according to the light shape requirement of the illumination device. Preferably, the first angle θ1 ranges from 30 degrees to 150 degrees.
  • Please refer to FIG. 12. The supporting base 5 of the illumination device 11 in the present invention may further includes a circuit board 6 electrically coupled to a power supply. The circuit board 6 is electrically coupled to a first connecting conductor and a second connecting conductor (not shown in FIG. 12) so as to be electrically connected to the LED structure 3. The power supply may then provide electricity to the LED ship 3 for emitting light via the circuit board 6. In other preferred embodiment of the present invention, the LED structure 3 may also be electrically connected to the supporting base directly via the first connecting conductor and the second connecting conductor (not shown in FIG. 12) without the circuit board 6, and the power supply may provides electricity to the LED ship 3 via the supporting base 5.
  • Please refer to FIG. 13. The illumination device 11 of the present invention may further include a reflector or filter 8 disposed on the second main surface 21B or the growth surface 210. The reflector or filter 8 may be used to reflect at least a part of light beams emitted from the LED structure 3 and passing through the transparent substrate 2. At least a part of the reflected light beams may be changed to be emitted from the first main surface 21A. The reflector 8 may includes at least one metal layer or a Bragg reflector, but not limited thereto. The Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes disposed in a stack configuration, or the Bragg reflector may be composed of a plurality of insulating thin films with different refractive indexes and a plurality of metal oxide layers disposed in a stack configuration.
  • Please refer to FIG. 14. The illumination device 11 of the present invention may further include a diamond-like carbon (DLC) film 9 disposed on the growth surface 210 or/and the second main surface 21B of the transparent substrate 2 so as to enhance the thermal conductive ability and the heat dissipating performance.
  • Please refer to FIG. 15. FIG. 15 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 15, an illumination device 100 in this embodiment includes a LED chip 10 and a supporting base 26. The LED chip 10 may be at least partially embedded into the supporting base 26, and the LED chip 10 is electrically connected to the electrode 30 and the electrode 32 of the supporting base 26 via the connecting conductors. Driving voltage V+ and driving voltage V− may be provided through the electrodes 30 and 32 respectively to the LED chip 10 for emitting a light beam L. In the illumination device 100 of this embodiment, the structure of the LED chip 10 may be similar to the LED chip of other embodiments described above, and the conductive pattern 22 is electrically connected to the first electrodes 16 and the second electrodes 18 of at least a part of the LED structures 14 so as to electrically connect at least some of the LED structures 14 in series or other approaches such as in parallel. The conductive pattern 22 may be a metal line layout or a pattern formed by wire bonding, but not limited thereto. Other appropriate materials or structures may also be used to form the conductive pattern 22. The first electrode 16 and the second electrode 18, which are not connected to the conductive pattern 22, are respectively and electrically connected to the electrode 30 and the electrode 32 of the supporting base 26 via the connecting conductors. Additionally, at least one of the LED structures 14 of the LED chip 10 emits the light beam L with a beam angle greater than 180 degrees or has a plurality of light emitting surfaces, and then the LED chip 10 may emits light beams from the first main surface 21A and the second main surface 21B. Further more, because some of the light beams may be emitted directly from the LED structure 14 and/or the other four side surfaces of the transparent substrate 2, the LED chip 10 may accordingly emit light from six sides or in full directions.
  • Additionally, the LED chip 10 in this embodiment may further includes a wavelength conversion layer 4, a DLC film 25 and an optical film 28 disposed on the second main surface 21B of the transparent substrate 2. The wavelength conversion layer 4 may further be disposed on the LED structures 14 or the first main surface 21A. The wavelength conversion layer 4 may covert at least a part of light beams emitted from the LED structures 14 into another light beams having different wavelength range so as to emit light with specific color or light having a wider wavelength range from the LED chip 10. For example, when blue light beams are emitted from the LED structure 14, a part of the blue light beams may be converted into yellow light beams by the wavelength conversion layer 4, and the blue light beams and the yellow light beams may be mixed for presenting white light beams emitted from the LED chip 10. The DLC film 25 and the optical film 28 may be used to enhance the thermal dissipation ability and the light emitting efficiency of the LED structure 14 and the LED chip 10. The transparent substrate 2 preferably includes materials with high thermal conductivity, and heat generated from the LED structure 14 may be accordingly dissipated directly to the supporting base 26, such that the high power LED structures can be applied in the illumination device of the present invention accordingly. However, in a preferred embodiment of the present invention, at the same power consumption of the illumination device, more LED structures with relatively low power are dispersed on the transparent substrate 2 so as to fully utilize the thermal conductivity capability of the transparent substrate 2. For example, a power of each LED structure 14 in this embodiment may be equal to or lower than 0.2 watt, but not limited thereto.
  • Please refer to FIG. 16. FIG. 16 is a schematic diagram illustrating an illumination device according to a preferred embodiment of the present invention. As shown in FIG. 16, an illumination device 200 in this embodiment may further includes a support 51 configured to connect the LED chip 10 and the supporting base 26. The LED chip 10 is fixed on a side of the support 51 by a bonding layer 52, and another side of the support 51 may be disposed on the supporting base 26. Additionally, the support 51 may be flexible so as to form an adjustable angle between the LED chip 10 and the supporting base 26, and the angle ranges from 30 degrees to 150 degrees. A material of the support 51 may include one selected from aluminum, composite metallic material, copper conductor, electric wire, ceramic substrate, printed circuit board, or other appropriate materials.
  • Please refer to FIGS. 17-19. When the transparent substrate 2 in the present invention is disposed on a supporting base 5, the transparent substrate 2 may be inserted or bonded to the supporting base 5.
  • As shown in FIG. 17. When the transparent substrate 2 is disposed on the supporting base 5, the transparent substrate 2 is inserted in to a single socket 61 of the supporting base 5, and the LED chip may be electrically coupled to the single socket 61 via connecting conductors. The LED structures (not shown in FIG. 17) on the transparent substrate 2 have to be electrically coupled to a power supply from or through the supporting base 5, and at least part of the conductive pattern or the connecting conductors are extended to an edge of the transparent substrate 2 and integrated in to an connecting finger having a plurality of conductive contact sheets or an electrically connecting port such as the connecting electrodes 311A and 311B described above (not shown in FIG. 17). When the transparent substrate 2 is inserted into the socket 61, the LED structure (not shown in FIG. 17) may then receive electricity from or through the supporting base 5, and the transparent substrate 2 may be fixed by the socket 61 of the supporting base 5 accordingly.
  • Please refer to FIG. 18. FIG. 18 is a schematic diagram illustrating the transparent substrate 2 inserted into multi sockets of the supporting base 5. In this embodiment, the transparent substrate 2 has a dual-pin structure. One of the pins may be configured as a positive electrode of the chip, and another one of the pins may be configured as a negative electrode of the chip. Both of the pins comprise at least a conductive contact sheet respectively so as to act as connecting ports. In other words, at least one electrically connecting port is disposed on the pin. Accordingly, there are at least two sockets 61 having corresponding shape and size with the pins so as to smoothly insert the transparent substrate 2 into the supporting base 5 and provide electricity to the LED structure.
  • Please refer to FIG. 19. The transparent substrate 2 is combined with the supporting base 5. In the combining process, metal materials such as gold, tin, indium, bismuth or silver may be used in combining or welding the transparent substrate 2 and the supporting base 5. Additionally, conductive silica gel or epoxy material may also be used in fixing the transparent substrate 2 on the supporting base 5. The conductive pattern and the connecting conductors of the LED chip may be electrically connected to the supporting base via the bonding layer accordingly.
  • Please refer to FIG. 20 and FIG. 21. The supporting base 5 of the illumination device 11 described in the present invention may be a substrate comprising one selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board. There is at least one support 62 on a surface or edge of the supporting base 5. The support 62 may be separated from the supporting base 5, or the support 62 and the supporting base 5 are monolithically integrated. The LED chip may be electrically coupled to the support 62 by bonding, and a bonding layer 63 is used to fix the transparent substrate 2 on the supporting base 5. The first angle θ1 is maintained between the transparent substrate 2 and a surface of the supporting base 5 without supports. The LED chip may also be disposed on the surface of the supporting base 5 without supports so as to enhance the light emitting performance of the illumination device 11. Additionally, the LED chip may also be inserted and connected to the support 62 (not shown in FIG. 20 and FIG. 21), wherein a connector may be used to connect the LED chip and the support (and/or the support and the supporting base) so as to fix the transparent substrate 2 on the supporting base 5. Because the supporting base 5 and the support 62 are flexible, it is more convenient to apply the present invention to different applications. Moreover, the color variety of the illumination device 11 may be enhanced for different demands by combining using LED chips having different light colors.
  • Please refer to FIG. 22. As shown in FIG. 22, an illumination device in this embodiment includes at least one LED chip 1 and a supporting base 5. The supporting base 5 includes at least one support 62 and at least one circuit pattern P. An end of the transparent substrate of the LED chip 1 is electrically coupled to the support 62 so as to avoid or reduce the shielding influence caused by the support 62 for light emitting from the LED chip 1. The supporting base 5 may comprise one selected from metal such as aluminum, composite metallic material including aluminum, copper conductor, electric wire, ceramic substrate or printed circuit board. The support 62 may be formed by cutting and bending a part of the supporting base 5 to form an angle (as the first angle θ1 shown in FIG. 20 and FIG. 21). The circuit pattern P is disposed on supporting base 5, and the circuit pattern P has at least one set of electrical port to be electrically connected to a power supply. Another part of the circuit pattern P extends on the support 62 so as to be electrically connected to the LED chip 1, and the LED chip 1 may than be electrically connected to the power supply via the circuit pattern P of the supporting base 5. In addition, the supporting base 5 may further include at least one hole H or at least one gap G, and fixing devices such as screws, nails or bolts may be used to combine the supporting base 5 with other device via the hole H or the gap G according to the application conditions of the illumination device. Meanwhile, the hole H or the gap G may also be used to increase the heat radiating area and enhance the heat dissipation capability of the illumination device.
  • Please refer to FIG. 23. FIG. 23 is a schematic diagram illustrating a device frame of an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 23, a device frame 322 in this embodiment includes a supporting base 5 and at least one support 62. Compared with the embodiment shown in FIG. 22, the support 62 in this embodiment includes at least one stripe part 342 and an opening 330. The electrode 30 and the electrode 32 are respectively disposed on two sides of the opening 330. The stripe part 342 forms at least one wall of the opening 330. One LED chip described in the present invention is disposed correspondingly to the opening 330 and electrically coupled to the support 62. The connecting conductors of the LED chip is electrically connected to the electrode 30 and 32 so as to drive the LED chip by a power supply via the support 62 and the circuit pattern on the supporting base 5. A size of the opening 330 may not be smaller than a main light emitting surface of the LED chip so as to prevent light beams emitted from the LED chip from being blocked by the support 62. An interface between the support 62 and the supporting base 5 may be adjustable so as to adjust the angle between the support 62 and the supporting base 5 as required.
  • Please refer to FIG. 23 and FIG. 24. FIG. 24 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. Compared with the embodiment shown in FIG. 23, an illumination device 302 shown in FIG. 24 further includes at least one support 62 having a plurality of openings 330. The openings 330 are respectively disposed on two opposite sides of the support 62, and the stripe part 342 forms at least one wall of each opening 330. The LED chip 310 are disposed correspondingly to the openings 330, and the conductive pattern or the connecting electrodes (not shown in FIG. 25) of each LED chip 310 are respectively disposed correspondingly and electrically connected to the electrode 30 and 32. The illumination device 302 in this embodiment may further include a plurality of the supports 62. Angles between the supporting base 5 and the supports 62 with the LED chip disposed on may be modified respectively. In other words, an angle between the supporting base 5 and at least one of the supports 62 may be different from an angle between the supporting base 5 and another one of the supports 62 so as to perform required light emitting effects, but not limited thereto. Additionally, LED chips emitting light having different wavelength ranges may be disposed on an identical support or on different supports so as to enrich the color effect of the illumination device.
  • For enhancing the luminance and improving the light emitting effect, in an illumination device of another preferred embodiment of the present invention, a plurality of the LED chips comprising the transparent substrates are disposed on the supporting bases detailed above or on other supporting structures. A point-symmetric distribution or a line-symmetric distribution may be applied. The LED chips comprising the transparent substrates may be point-symmetrically disposed on the supporting structure or line-symmetrically disposed on the supporting structure. Please refer to FIGS. 25-28. In the illumination devices of the embodiments shown in FIGS. 25-28, the LED chips are disposed on the supporting structures having different shapes. The light beams emitted from the illumination devices 11 may be uniform because of the point-symmetric distribution or the line-symmetric distribution (the LED structures are not shown in FIGS. 25-28). The light emitting effects of the illumination devices 11 may be further improved by adjusting the first angle described above. As shown in FIG. 25, the LED chips are point-symmetrically arranged and form an angle between each other in 90 degrees. Such that at least two of the LED chips face any one of the four sides of the illumination device 11. As shown in FIG. 26, the angle between the LED chips is smaller than 90 degrees. As shown in FIG. 28, the angle between the LED chips is larger than 90 degrees. In another preferred embodiment of the present invention (not shown), the LED chips may be asymmetrically disposed and at least a part of the LED chips may be disposed in a crowd or separately disposed so as to perform required light shape according to different applications of the illumination device.
  • Please refer to FIG. 29. FIG. 29 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 29, an illumination device 301 includes a LED chip 310 and a support 321. The support 321 includes an opening 330, and the LED chip 310 is disposed correspondingly to the opening 330. In this embodiment, an external part of the support 321 may be work as a pin or be bent to form a connecting pad required in surface mounting so as to be fixed and electrically connected to other electrical circuit units. A light emitting surface of the LED chip 310 is disposed in the opening 330, and the illumination device 301 may still emit light from multi sides or six sides accordingly whether the support 321 is transparent or not.
  • Please refer to FIG. 30. An illumination device is provided in this embodiment of the present invention. The illumination device includes a lamp housing 7 having a tube shape, at least one LED chip 1 and a supporting structure 60. The LED chip 1 is disposed on the supporting structure 60, and at least a part of the LED chip 1 is disposed in space formed by the lamp housing 7. Please refer to FIG. 31. When more LED chips 1 are disposed in the lamp housing 7, the first main surfaces 21A of the LED chips 1 are arranged separately and not parallel to one another. Additionally, the LED chips 1 are at least partially disposed in space formed by the lamp housing 7, and the LED chips 1 are not closely adjacent to an inner wall of the lamp housing 7. Preferably, a distance D between the LED chip 1 and the lamp housing 7 may be equal to or larger than 500 micrometers. However, the lamp housing 7 may also be formed by filling glue, and the lamp housing 7 may at least partially cover and directly contact the LED chip 1.
  • Please refer to FIG. 32. In another illumination device is provided in this embodiment of the present invention, the lamp housing 7 of the illumination device has at least one covering layer 71. The covering layer 71 may be a billboard, signboard or other display devices requiring backlight sources. Light provided from the first main surface 21A and the second main surface 21B of the LED chip 1 in the present invention may be applied as a light source of a backlight for the covering layer 71. An second angle between the LED chip 1 and the covering layer 71 ranges between 0 degree and 45 degrees (the second angle is 0 degree in FIG. 32 and not shown accordingly). In addition, the LED chips 1 are at least partially disposed in space formed by the lamp housing 7 and basically not closely adjacent to the inner wall of the lamp housing 7, and then light beams generated by a light emitting plate/sheet or the LED chip comprising the transparent substrate and the LED structure providing light in multi-directions can uniformly pass through the lamp housing. Preferably, a distance D between the LED chip 1 and the lamp housing 7 may be equal to or larger than 500 micrometers. However, the lamp housing 7 may also be formed by filling glue, and the lamp housing 7 may at least partially cover and directly contact the LED chip 1.
  • Please refer to FIGS. 33-36. In other series of embodiments in the present invention, the illumination devices in this series of embodiments may further include a lamp housing 7 having a bulb shape and a base 64. As shown in FIG. 33, compared with the other embodiments described above, the illumination device in this embodiment further includes a lamp housing 7 having a bulb shape, and a supporting base 5 further disposed on a base 64. The base 64 may be a traditional lamp base. The lamp housing 7 may be coupled to the base 64 and cover the LED chip and the supporting base 5, or the lamp housing 7 may be directly coupled to the supporting base 5 and cover the LED chip. The shape of the base 64 may be modified as required. The base 64 may be a platform or include another supporting protrusion (as shown in FIG. 34). As shown in FIG. 35, the wavelength conversion layer 4 is coated on an inner wall of the lamp housing 7 so as to convert at least a part of light beams generated from the LED structure 3 into another light beams having different wavelength range before leaving the lamp housing 7. As shown in FIG. 36, a dual housing design including the lamp housing 7 and a lamp housing 7′ is disclosed. Space S exists between the lamp housing 7 and the lamp housing 7′. The space S, the lamp housing 7 and the lamp housing 7′ may be further modified for performing different patterns and colors of light from the illumination device.
  • Please refer to FIG. 37 and FIG. 38. FIG. 37 is a schematic diagram illustrating a light bar according to another preferred embodiment of the present invention. FIG. 38 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 37, a light bar 323 in this embodiment includes a plurality of openings 330. The light bar 323 has an extending direction X, and the openings 330 are disposed along the extending direction X. A plurality of the LED chips providing light in multi-directions are disposed correspondingly to the openings 330 of the light bar 323, and the light bar 323 can emit light accordingly, but not limited thereto. Additionally, the light bar 323 may further include a plurality of electrodes 30 and 32, a first external connecting electrode 350A and a second external connecting electrode 350B. The electrical polarity of the electrode 30 is different from the electrode 32. The electrodes 30 and the electrodes 32 are respectively disposed on the same side or different sides of each opening 330. The first external connecting electrode 350A and the second external connecting electrode 350B are electrically connected to the electrodes 30 and the electrodes 32 respectively. The first external connecting electrode 350A and the second external connecting electrode 350B are respectively disposed on the same side or different sides of the light bar 323. As shown in FIG. 37 and FIG. 38, an illumination device 303 may include the light bar 323 described above and a device frame 360, wherein the light bar 323 with LED chips 310 may be vertically disposed, horizontally disposed or inclinedly disposed on the device frame 360. The first connecting electrode 350A and 350B of the light bar 323 may be electrically connected to a power supply via the device frame 360, but not limited thereto. Additionally, other appropriate optical films such as diffusion films may also be applied in the illumination device 303 so as to modify the light emitting effect of the LED chips 310 disposed in the device frame 360.
  • Please refer to FIG. 39. FIG. 39 is a schematic diagram illustrating an illumination device according to another preferred embodiment of the present invention. As shown in FIG. 39, an illumination device 304 includes a plurality of the LED chips 310 and a supporting base 324. The supporting base 324 includes a plurality of openings 330, and the openings 330 are disposed as an array. The LED chips 310 are disposed correspondingly to the openings 330. The connecting approach of the LED chips 310 on the openings 330 may be similar to that described in the embodiments detailed above, and will not be redundantly described. In addition, the supporting base 324 may further include a first external connecting electrode 350A and a second external connecting electrode 350B so as to be electrically connected to other electrical devices. Additionally, the illumination device 304 in this embodiment may be used as a billboard, signboard or a backlight module, and the supporting base 324 is preferably transparent, but not limited thereto.
  • Those skilled in the art will readily observe that numerous modifications and alterations of the device and method may be made while retaining the teachings of the invention. Accordingly, the above disclosure should be construed as limited only by the metes and bounds of the appended claims.

Claims (27)

What is claimed is:
1. A sapphire substrate, configured to form a light emitting diode chip providing light in multi-directions, comprising a growth surface and a second main surface disposed opposite to each other, wherein a thickness of the sapphire substrate is thicker than or equal to 200 micrometers.
2. The sapphire substrate of claim 1, wherein the second main surface comprises a non-planar structure.
3. The sapphire substrate of claim 1, further comprising a diamond-like carbon (DLC) film, disposed on the growth surface or the second main surface.
4. The sapphire substrate of claim 3, further comprising an optical film, disposed between the DLC film and the second main surface.
5. The sapphire substrate of claim 1, wherein an area of the growth surface or an area of the second main surface is larger than 5 times of an total area formed from at least one light emitting surface of at least one light emitting diode (LED) structure disposed on the growth surface or the second main surface.
6. The sapphire substrate of claim 1, further comprising at least one wavelength conversion layer disposed on the second main surface, wherein the wavelength conversion layer includes at least one kind of fluorescent powders.
7. The sapphire substrate of claim 1, further comprising a reflector or filter disposed on the second main surface or the growth surface.
8. The sapphire substrate of claim 7, wherein the reflector or filter comprises a plurality of insulating thin films with different refractive indexes.
9. The sapphire substrate of claim 8, wherein the reflector comprises a plurality of metal oxide layers.
10. The sapphire substrate of claim 1, further comprising a first connecting conductor and a second connecting conductor disposed on the growth surface or the second main surface.
11. The sapphire substrate of claim 1, wherein a light transmittance of the sapphire substrate is larger than or equal to 70% for light beams having a wavelength ranges from 420 nanometers to 470 nanometers.
12. The sapphire substrate of claim 10, wherein the first connecting conductor is connected to a first connecting electrode and the second connecting conductor is connected to a second connecting electrode.
13. The sapphire substrate of claim 12, wherein the first connecting electrode and the second connecting electrode are relatively disposed on different sides of the sapphire substrate or on the same side of the sapphire substrate.
14. The sapphire substrate of claim 1, wherein at least one pin is disposed on the sapphire substrate, and at least one electrically connecting port is disposed on the pin.
15. A light emitting diode (LED) chip, providing light in multi-directions, comprising:
a sapphire substrate of claim 1; and
a plurality of light emitting diode (LED) structures, disposed on the growth surface and forming a first main surface where light emitted from with at least a part of the growth surface without the LED structures, and each of the LED structures comprises a first electrode and a second electrode,
wherein light emitted from at least one of the LED structures passes through the sapphire substrate and emerges from the second main surface.
16. A light emitting diode (LED) chip, providing light in multi-directions, comprising:
a sapphire substrate of claim 1; and
at least one light emitting diode (LED) structures, disposed on the growth surface and forming a first main surface where light emitted from with at least a part of the growth surface without the LED structure, and the LED structure comprises a first electrode and a second electrode,
wherein the LED chip has a beam angle greater than 180 degrees, and at least a part of light beams emitted from the LED structure pass through the sapphire substrate and emerge from the second main surface.
17. The LED chip of claim 15, further comprising wavelength conversion layers respectively disposed on the first main surface and the second main surface, wherein a ratio of fluorescent powder concentration in the different wavelength conversion layers ranges from 1:0.5 to 1:3.
18. The LED chip of claim 15, further comprising wavelength conversion layers respectively disposed on the LED structure and the second main surface, wherein a ratio of fluorescent powder concentration in the different wavelength conversion layers ranges from 1:0.5 to 1:3.
19. The LED chip of claim 15, further comprising a plurality of LED structures disposed on the second main surface, wherein the LED structures on the growth surface are disposed interlacedly corresponding to the LED structures on the second main surface.
20. An illumination device, comprising:
a LED chip of claim 15; and
a supporting base, wherein the LED chip is disposed on the supporting base.
21. The illumination device of claim 20, wherein a first angle exists between the LED chip and the supporting base, and the first angle ranges from 30 degrees to 150 degrees.
22. The illumination device of claim 20, further comprising a support coupled to the supporting base, wherein the LED chip is disposed on the support.
23. The illumination device of claim 22, wherein the support is flexible for forming the first angle between the LED chip and the supporting base.
24. The illumination device of claim 20, further comprising a plurality of LED chips, wherein at least some of the LED chips are point-symmetrically disposed on the supporting base or line-symmetrically disposed on the supporting base.
25. The illumination device of claim 20, further comprising another LED chip, wherein one of the LED chips stands on the supporting base and the other one lies on the supporting base.
26. An illumination device, comprising:
a LED chip of claim 15; and
a support, wherein the LED chip is disposed on the support.
27. The illumination device of claim 26, wherein a material of the support includes one of selected from metal, composite metallic material, copper conductor, electric wire, ceramic substrate or printed circuit board.
US13/903,998 2012-05-29 2013-05-28 Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device Abandoned US20130320363A1 (en)

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US14/218,944 US20180006199A9 (en) 2012-05-29 2014-03-18 Semiconductor light emitting element with dispersive optical unit and illumination device comprising the same
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TW101131198A TW201409775A (en) 2012-08-28 2012-08-28 Illumination device having light emitting diode
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TW102116429A TWI533468B (en) 2012-05-29 2013-05-08 Light emitting element and illumination device thereof
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US14/089,708 Active 2033-09-05 US9368483B2 (en) 2012-05-29 2013-11-25 Illumination device capable of decreasing shadow of lighting effect
US15/631,482 Active US10030857B2 (en) 2012-05-29 2017-06-23 Illumination device
US16/016,401 Active US10281123B2 (en) 2012-05-29 2018-06-22 Illumination device
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104359027A (en) * 2014-11-03 2015-02-18 黎昌兴 Light-emitting diode (LED) light source with luminous body arranged at transmission heat conducting base
US9166116B2 (en) * 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device
US20160041663A1 (en) * 2014-08-06 2016-02-11 Apple Inc. Electronic Device Display With Array of Discrete Light-Emitting Diodes
US9546762B2 (en) 2013-09-11 2017-01-17 Huga Optotech Inc. LED assembly
DE102016113206A1 (en) * 2016-07-18 2018-01-18 Osram Opto Semiconductors Gmbh Radiation emitting device
US20180231191A1 (en) * 2014-10-01 2018-08-16 Koninklijke Philips N.V. Light source with tunable emission spectrum
US10374003B2 (en) * 2017-05-30 2019-08-06 Samsung Electronics Co., Ltd. Semiconductor light emitting device and LED module using the same
US10487996B2 (en) * 2016-04-19 2019-11-26 Lumens Co., Ltd. Light emitting devices and light emitting bulbs including the same
WO2021221924A1 (en) * 2020-04-30 2021-11-04 Lumileds Llc Color leds with integrated optical filtering elements
US11342311B2 (en) * 2019-03-18 2022-05-24 Intematix Corporation LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material
US11631792B2 (en) 2019-03-18 2023-04-18 Intematix Corporation Packaged white light emitting devices comprising photoluminescence layered structure
US11781714B2 (en) 2019-03-18 2023-10-10 Bridgelux, Inc. LED-filaments and LED-filament lamps

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9269870B2 (en) 2011-03-17 2016-02-23 Epistar Corporation Light-emitting device with intermediate layer
CN106252491A (en) 2012-05-29 2016-12-21 晶元光电股份有限公司 Light-emitting device
CN105074941B (en) 2012-12-06 2019-10-08 首尔伟傲世有限公司 Light emitting diode, lighting module, lighting apparatus and back light unit
US9536924B2 (en) 2012-12-06 2017-01-03 Seoul Viosys Co., Ltd. Light-emitting diode and application therefor
TWI540768B (en) * 2012-12-21 2016-07-01 鴻海精密工業股份有限公司 Led chip unit and method manufacturing the same
KR20140096722A (en) * 2013-01-29 2014-08-06 엘지이노텍 주식회사 A lamp unit
TWI626395B (en) 2013-06-11 2018-06-11 晶元光電股份有限公司 Light emitting device
US20150003058A1 (en) * 2013-07-01 2015-01-01 Biao Zhang Led light bulb
CN103545458B (en) * 2013-10-18 2019-06-11 京东方科技集团股份有限公司 Lighting device and preparation method thereof
TWM473612U (en) * 2013-10-25 2014-03-01 Unity Opto Technology Co Ltd LED holder and bulb thereof
CN203948978U (en) * 2013-11-25 2014-11-19 璨圆光电股份有限公司 Light-emitting device
JP2015135918A (en) * 2014-01-17 2015-07-27 豊田合成株式会社 Light-emitting device and manufacturing method therefor
TWI550898B (en) * 2014-03-18 2016-09-21 璨圓光電股份有限公司 Semiconductor light emitting element and illumination device comprising the same
CN103912808B (en) * 2014-03-19 2016-09-28 江苏日月照明电器有限公司 A kind of LED luminescence component and light fixture thereof
CN103953896A (en) * 2014-04-23 2014-07-30 广东聚科照明股份有限公司 360-degree full peripheral light filament device
CN103953863A (en) * 2014-04-23 2014-07-30 广东聚科照明股份有限公司 360-degree full peripheral light lamp bar
WO2015170814A1 (en) * 2014-05-09 2015-11-12 Lg Electronics Inc. Apparatus of light source for display and apparatus of display using the same
TW201545378A (en) * 2014-05-19 2015-12-01 Achrolux Inc Package structures and methods for fabricating the same
KR102199991B1 (en) * 2014-05-28 2021-01-11 엘지이노텍 주식회사 Light emitting device and light unit having the same
US10854800B2 (en) 2014-08-07 2020-12-01 Epistar Corporation Light emitting device, light emitting module, and illuminating apparatus
CN105509001A (en) * 2014-09-26 2016-04-20 罗建华 LED lamp panel
TW201617548A (en) * 2014-11-06 2016-05-16 艾笛森光電股份有限公司 LED lamp filament structure
CN105737103B (en) * 2014-12-10 2018-07-20 深圳市光峰光电技术有限公司 Wavelength converter and fluorescence associated colour wheel and projection arrangement
US9958115B2 (en) * 2015-07-22 2018-05-01 Qin Kong LED tube grow light
US10209427B2 (en) * 2015-10-30 2019-02-19 Alson Technology Limited Electronic device
KR102435458B1 (en) * 2015-12-04 2022-08-30 엘지디스플레이 주식회사 Light-Emitting Package for Backlight Unit of Display Device and Light-Emitting Apparatus having the same
DE102016105211A1 (en) 2016-03-21 2017-09-21 Osram Opto Semiconductors Gmbh Filament and its manufacture, as well as lamps with filaments
DE102016117594A1 (en) 2016-09-19 2018-03-22 Osram Opto Semiconductors Gmbh Light emitting device
CN107887369A (en) * 2016-09-30 2018-04-06 王定锋 A kind of double-colored lamp bar of LED and preparation method
US20190139948A1 (en) * 2017-11-03 2019-05-09 Xiamen Eco Lighting Co. Ltd. Led lighting apparatus
DE102017129975A1 (en) * 2017-12-14 2019-06-19 Osram Opto Semiconductors Gmbh Method for producing a semiconductor device and semiconductor device
KR102582424B1 (en) * 2017-12-14 2023-09-25 삼성전자주식회사 Led lighting device package and display apparatus using the same
US10069047B1 (en) * 2018-01-16 2018-09-04 Leedarson Lighting Co. Ltd. LED device
CN108417691A (en) * 2018-04-18 2018-08-17 东莞市恩瑞精密电子有限公司 Linear light source preparation method
CN110737085B (en) * 2018-07-18 2021-11-30 深圳光峰科技股份有限公司 Wavelength conversion device
CN108870104A (en) * 2018-08-16 2018-11-23 四川蓝景光电技术有限责任公司 Single-point leakage type LED light
CN112086413B (en) * 2019-06-14 2024-04-23 Jmj韩国株式会社 Semiconductor package
US11171118B2 (en) 2019-07-03 2021-11-09 Micron Technology, Inc. Semiconductor assemblies including thermal circuits and methods of manufacturing the same
US11206749B2 (en) 2019-08-02 2021-12-21 Micron Technology, Inc. Tubular heat spreaders for memory modules and memory modules incorporating the same
TWI744194B (en) * 2021-02-23 2021-10-21 晶呈科技股份有限公司 Light-emitting diode packaging structure and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168023A (en) * 1990-07-04 1992-12-01 Matsushita Electric Industrial Co., Ltd. Photosensitive element used in electrophotography
US20080128731A1 (en) * 2006-11-15 2008-06-05 The Regents Of The University Of California Transparent mirrorless light emitting diode
US20090008654A1 (en) * 2004-12-22 2009-01-08 Hideo Nagai Semiconductor Light Emitting Device, Illumination Module, Illumination Apparatus, Method For Manufacturing Semiconductor Light Emitting Device, and Method For Manufacturing Semiconductor Light Emitting Element
US20110006312A1 (en) * 2009-07-07 2011-01-13 Epistar Corporation Light-emitting device
US20110117786A1 (en) * 2009-11-13 2011-05-19 Smk Corporation Led illumination apparatus

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5718771Y2 (en) * 1976-05-25 1982-04-20
JPH10117018A (en) * 1996-10-11 1998-05-06 Citizen Electron Co Ltd Chip-type light-emitting diode
JP4061005B2 (en) * 1999-03-31 2008-03-12 シャープ株式会社 LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF, AND METHOD FOR MOUNTING LIGHT EMITTING DIODE ON ELECTRIC WIRING BOARD
US6479046B2 (en) * 2000-08-17 2002-11-12 Joseph C. Dickens Attractants and repellants for colorado potato beetle
JP2002232020A (en) * 2001-01-31 2002-08-16 Matsushita Electric Ind Co Ltd Led, and display, illuminator, liquid display back light device using the led, and light source device for projector
TW511299B (en) * 2001-03-14 2002-11-21 Kuo-Yen Lai Metal substrate with double LED for double side light emission
JP2004134249A (en) * 2002-10-10 2004-04-30 Mitsubishi Electric Corp Lighting device
TW582122B (en) 2003-01-27 2004-04-01 Opto Tech Corp Light emitting diode package structure
US20050052885A1 (en) 2003-09-04 2005-03-10 Amazing International Enterprise Limited Structure of LED decoration lighting set
JP2005252222A (en) 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device, lighting module, lighting device, display device, and method of manufacturing semiconductor light-emitting device
JP2005347516A (en) * 2004-06-03 2005-12-15 Jsr Corp Light emitting device
EP1640756A1 (en) * 2004-09-27 2006-03-29 Barco N.V. Methods and systems for illuminating
CN1862879A (en) 2005-01-26 2006-11-15 内部无线公司 Low profile antenna
JP2006216765A (en) * 2005-02-03 2006-08-17 Nippon Leiz Co Ltd Light source apparatus
CN1866552A (en) * 2005-05-18 2006-11-22 光宝科技股份有限公司 Light going direction changing unit, module and LED assembly comprising the same
JP2007165811A (en) * 2005-12-16 2007-06-28 Nichia Chem Ind Ltd Light emitting device
US7569406B2 (en) 2006-01-09 2009-08-04 Cree, Inc. Method for coating semiconductor device using droplet deposition
US8441179B2 (en) * 2006-01-20 2013-05-14 Cree, Inc. Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources
KR100703217B1 (en) 2006-02-22 2007-04-09 삼성전기주식회사 Method for fabricating a light emitting diode package
JP2007234975A (en) * 2006-03-02 2007-09-13 Matsushita Electric Ind Co Ltd Led light source module, edge input type backlight, and liquid crystal display
JP2007324578A (en) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp Integrated semiconductor light-emitting device, and manufacturing method thereof
CN101192601B (en) * 2006-11-30 2010-10-13 东芝照明技术株式会社 Illumination device with semiconductor light-emitting elements
TW200825529A (en) * 2006-12-06 2008-06-16 Chi Lin Technology Co Ltd Light mixer and backlight module having it
CN101578473B (en) 2007-01-11 2013-04-10 松下电器产业株式会社 Light source
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP5463447B2 (en) * 2008-01-18 2014-04-09 三洋電機株式会社 Light emitting device and lamp provided with the same
JP5097057B2 (en) * 2008-08-29 2012-12-12 株式会社沖データ Display device
US20100073944A1 (en) 2008-09-23 2010-03-25 Edison Opto Corporation Light emitting diode bulb
TW201015743A (en) * 2008-10-01 2010-04-16 Formosa Epitaxy Inc LED and manufacturing method thereof
AU2009322214A1 (en) 2008-12-04 2011-07-21 The Regents Of The University Of California Electron injection nanostructured semiconductor material anode electroluminescence method and device
KR20100076083A (en) * 2008-12-17 2010-07-06 서울반도체 주식회사 Light emitting diode having plurality of light emitting cells and method of fabricating the same
JP5266075B2 (en) * 2009-01-26 2013-08-21 パナソニック株式会社 Light bulb-type lighting device
US8382331B2 (en) * 2009-04-03 2013-02-26 Yung Pun Cheng LED lighting lamp
US8079735B1 (en) 2009-03-31 2011-12-20 Usman Vakil Light emitting diode illumination device
US9029898B2 (en) * 2009-08-26 2015-05-12 Formosa Epitaxy Incorporation Light emitting diode and illumination device using same
WO2011033551A1 (en) * 2009-09-15 2011-03-24 アリスト・エンジニアリング プライベート リミテッド Illuminating apparatus
TWM383697U (en) * 2009-12-30 2010-07-01 Sheng-Yi Zhuang LED lamp set and light-emitting bulb applying the lamp set
KR20110099513A (en) * 2010-03-02 2011-09-08 삼성엘이디 주식회사 Illuminating device
CN102194957A (en) * 2010-03-19 2011-09-21 富士康(昆山)电脑接插件有限公司 Bearing seat of light-emitting diode chip
CN102222749A (en) * 2010-04-19 2011-10-19 展晶科技(深圳)有限公司 Light emitting component and module thereof
CN101846256A (en) * 2010-05-04 2010-09-29 蔡州 Led light source
TWM389204U (en) 2010-06-03 2010-09-21 Liquidleds Lighting Corp LED illumination lamp
CN102339927A (en) * 2010-07-27 2012-02-01 展晶科技(深圳)有限公司 Light emitting diode
CN102374418B (en) 2010-08-20 2014-08-20 光宝电子(广州)有限公司 Luminous diode light fixture
US8210716B2 (en) * 2010-08-27 2012-07-03 Quarkstar Llc Solid state bidirectional light sheet for general illumination
RU2546469C2 (en) 2010-09-08 2015-04-10 Чжэцзян Ледисон Оптоэлектроникс Ко., Лтд. Led lamp
JP5545547B2 (en) 2010-10-07 2014-07-09 東芝ライテック株式会社 Light source body and lighting apparatus
JP4778107B1 (en) * 2010-10-19 2011-09-21 有限会社ナプラ Light emitting device and manufacturing method thereof
US20130147348A1 (en) * 2010-10-22 2013-06-13 Panasonic Corporation Mounting board, light emitting device and lamp
CN201866576U (en) 2010-10-28 2011-06-15 王元成 LED bulb
KR101726807B1 (en) * 2010-11-01 2017-04-14 삼성전자주식회사 Light Emitting Device
JP2012099726A (en) 2010-11-04 2012-05-24 Stanley Electric Co Ltd Led module and led lamp
US20120118222A1 (en) * 2010-11-15 2012-05-17 Sumitomo Electric Industries, Ltd. METHOD OF MANUFACTURING GaN-BASED FILM
TW201233940A (en) 2010-11-30 2012-08-16 Wintek Corp Light source for crystal lamp
WO2012090356A1 (en) 2010-12-28 2012-07-05 パナソニック株式会社 Light-emitting device, light-emitting module, and lamp
CN102130239B (en) * 2011-01-31 2012-11-07 郑榕彬 Omnibearing lighting LED (light-emitting diode) packaging method and LED packaging part
US8314566B2 (en) * 2011-02-22 2012-11-20 Quarkstar Llc Solid state lamp using light emitting strips
DE102011017195A1 (en) * 2011-04-15 2012-10-18 Osram Opto Semiconductors Gmbh lighting device
US8723665B2 (en) * 2011-07-26 2014-05-13 Tyco Safety Products Canada Ltd. Audio buffering in two-way voice alarm systems
TWI464868B (en) 2011-09-14 2014-12-11 Lextar Electronics Corp Solid state light source module and array thereof
US9857059B2 (en) * 2011-10-31 2018-01-02 Sharp Kabushiki Kaisha Light emitting device, illuminating device and method of manufacturing light emitting device
US8591072B2 (en) * 2011-11-16 2013-11-26 Oree, Inc. Illumination apparatus confining light by total internal reflection and methods of forming the same
US9395051B2 (en) 2012-04-13 2016-07-19 Cree, Inc. Gas cooled LED lamp
US9010964B2 (en) * 2012-04-26 2015-04-21 Epistar Corporation LED light bulb with interior facing LEDs
CN106252491A (en) * 2012-05-29 2016-12-21 晶元光电股份有限公司 Light-emitting device
CN202733581U (en) * 2012-08-27 2013-02-13 程敬鹏 LED bulb capable of emitting light at full angles
TWM453804U (en) 2013-01-25 2013-05-21 Bo-Cheng Lin LED bulb with multidirectional lighting

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168023A (en) * 1990-07-04 1992-12-01 Matsushita Electric Industrial Co., Ltd. Photosensitive element used in electrophotography
US20090008654A1 (en) * 2004-12-22 2009-01-08 Hideo Nagai Semiconductor Light Emitting Device, Illumination Module, Illumination Apparatus, Method For Manufacturing Semiconductor Light Emitting Device, and Method For Manufacturing Semiconductor Light Emitting Element
US20080128731A1 (en) * 2006-11-15 2008-06-05 The Regents Of The University Of California Transparent mirrorless light emitting diode
US20110006312A1 (en) * 2009-07-07 2011-01-13 Epistar Corporation Light-emitting device
US20110117786A1 (en) * 2009-11-13 2011-05-19 Smk Corporation Led illumination apparatus

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10670244B2 (en) 2012-05-29 2020-06-02 Epistar Corporation Light emitting device
US9166116B2 (en) * 2012-05-29 2015-10-20 Formosa Epitaxy Incorporation Light emitting device
US9741699B2 (en) 2012-05-29 2017-08-22 Epistar Corporation Light emitting device
US11255524B2 (en) 2012-05-29 2022-02-22 Epistar Corporation Light emitting device
US10247395B2 (en) 2012-05-29 2019-04-02 Epistar Corporation Light emitting device
US11808436B2 (en) 2012-05-29 2023-11-07 Epistar Corporation Light emitting apparatus
US9546762B2 (en) 2013-09-11 2017-01-17 Huga Optotech Inc. LED assembly
US20160041663A1 (en) * 2014-08-06 2016-02-11 Apple Inc. Electronic Device Display With Array of Discrete Light-Emitting Diodes
US11669178B2 (en) 2014-08-06 2023-06-06 Apple Inc. Electronic device display with array of discrete light-emitting diodes
US10739882B2 (en) * 2014-08-06 2020-08-11 Apple Inc. Electronic device display with array of discrete light-emitting diodes
US20180231191A1 (en) * 2014-10-01 2018-08-16 Koninklijke Philips N.V. Light source with tunable emission spectrum
CN104359027A (en) * 2014-11-03 2015-02-18 黎昌兴 Light-emitting diode (LED) light source with luminous body arranged at transmission heat conducting base
US10487996B2 (en) * 2016-04-19 2019-11-26 Lumens Co., Ltd. Light emitting devices and light emitting bulbs including the same
DE102016113206A1 (en) * 2016-07-18 2018-01-18 Osram Opto Semiconductors Gmbh Radiation emitting device
US10374003B2 (en) * 2017-05-30 2019-08-06 Samsung Electronics Co., Ltd. Semiconductor light emitting device and LED module using the same
US11631792B2 (en) 2019-03-18 2023-04-18 Intematix Corporation Packaged white light emitting devices comprising photoluminescence layered structure
US11342311B2 (en) * 2019-03-18 2022-05-24 Intematix Corporation LED-filaments and LED-filament lamps utilizing manganese-activated fluoride red photoluminescence material
US11781714B2 (en) 2019-03-18 2023-10-10 Bridgelux, Inc. LED-filaments and LED-filament lamps
WO2021221924A1 (en) * 2020-04-30 2021-11-04 Lumileds Llc Color leds with integrated optical filtering elements

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