DE102016113206A1 - Radiation emitting device - Google Patents

Abstract

The invention relates to a radiation-emitting device (1) comprising - a plurality of radiation-emitting semiconductor components (2) each having a surface composed of a plurality of sub-areas (2A, 2B, 2C, 2D, 2E, 2F) and one each on the Surface arranged first and second terminal element (3, 4), wherein the radiation emitting semiconductor devices (2) at a plurality of their partial surfaces (2A, 2B, 2C, 2D, 2E, 2F) emit radiation, - a carrier (6) having A three-dimensional shape, which can be determined by a first extension (B) determinable along a first axis (A1), a second extension (T) determinable along a second axis (A2) perpendicular to the first, and a second extension (T1) along a plane perpendicular to the first (A1 ) and the second axis (A2) extending third axis (A3) determinable third extent (H), wherein the third extent (H) is greater than the first (B) and the second extent (T), at least one electrical contact means (7A, 7B), each connection element (3, 4) being electrically connected to an electrical contact means (7A, 7B) of the carrier (6), and the semiconductor components (2) being mechanically connected to one another by means of the carrier (6) wherein at most 50% of each subarea (2A, 2B, 2C, 2D, 2E, 2F) of a single semiconductor device (2) is covered by the carrier (6).

Description

The invention relates to a radiation-emitting device which has a plurality of radiation-emitting semiconductor components, wherein the semiconductor components in particular emit radiation having wavelengths in the visible spectral range.

In a radiation-emitting device which has at least one radiation-emitting semiconductor component as the radiation source, a heat sink is typically provided, which is in thermal contact with the at least one semiconductor component, so that heat loss arising during operation is absorbed by the heat sink and thereby the at least a radiation-emitting semiconductor device can be sufficiently cooled. The problem here is that of the heat sink not only the heat loss, but also radiation that generates the at least one radiation emitting semiconductor device is absorbed, so that the radiation efficiency of the radiation-emitting device is impaired.

An object to be solved in the present case is to specify a radiation-emitting device in which absorption losses that occur in particular at the heat sink are reduced in comparison to a conventional device.

This object is achieved by a radiation-emitting device having the features of the independent patent claim.

In accordance with at least one embodiment, the radiation-emitting device comprises a plurality of radiation-emitting semiconductor components and a carrier, by means of which the semiconductor components are mechanically connected to one another.

The semiconductor components may each have a surface which is composed of a plurality of partial surfaces, and in each case a first and second connecting element arranged on the surface. By means of the first and second connection element, it is possible to electrically connect the respective semiconductor component and to supply power during operation.

The semiconductor components preferably each comprise a semiconductor body on which the connection elements are arranged. The semiconductor bodies may each comprise a first semiconductor region, a second semiconductor region and an active zone arranged between the first and second semiconductor regions, which is suitable in particular for generating radiation. Preferably, the first semiconductor region is a p-type region. Furthermore, the second semiconductor region is in particular an n-conducting region. In particular, the first connection element is electrically connected to the first semiconductor region and the second connection element is electrically connected to the second semiconductor region. Preferably, the connection elements are arranged mirror-symmetrically on a partial surface of the semiconductor body. Furthermore, the connection elements are advantageously arranged centrally on the partial surface. In this case, the power supply takes place from the center of the semiconductor body to the outside to edge regions of the semiconductor body. Length and width of the connecting elements can be reduced due to the central, symmetrical arrangement, whereby radiation can be emitted by a larger part of the partial surface.

For the respective semiconductor body or the first and second semiconductor region of the individual semiconductor body are preferably based on nitride compound semiconductors materials. "Based on nitride compound semiconductors" in the present context means that at least one layer of the semiconductor body comprises a nitride III / V compound semiconductor material, preferably Al _n Ga _m In _{1 nm} N, where 0 ≦ n ≦ 1, 0 ≦ m ≦ 1 and n + m ≤ 1. This material does not necessarily have to have a mathematically exact composition according to the above formula. Rather, it may comprise one or more dopants as well as additional constituents which do not substantially alter the characteristic physical properties of the Al _n Ga _m In _1-nm N material. For the sake of simplicity, however, the above formula contains only the essential constituents of the crystal lattice (Al, Ga, In, N), even if these may be partially replaced by small amounts of other substances.

The radiation-emitting semiconductor components preferably emit radiation at a plurality of their partial surfaces. In particular, radiation is emitted on all partial surfaces of each semiconductor component. Furthermore, the radiation from each individual semiconductor device can be emitted isotropically.

The carrier may have a three-dimensional shape which is characterized by a first extent determinable along a first axis, a second extent determinable along a second axis extending perpendicular to the first axis and by a third extent determinable along a third axis extending perpendicular to the first and second axes, wherein the third dimension is greater than the first and second dimensions. The "expansion" is in particular the maximum extent along the respective axis. Preferably, the third is Extension many times greater than the first and second dimensions.

In accordance with at least one embodiment, the carrier comprises at least one electrical contact means, wherein each connection element is electrically connected to an electrical contact means of the carrier.

Preferably, at most 50% of each subarea of a single semiconductor device is covered by the carrier. Due to the maximum 50% degree of coverage of each partial area, radiation losses can be reduced in comparison to devices in which the semiconductor components are completely covered by a carrier, for example a heat sink, at least on a partial area. At the same time, the semiconductor components can be cooled in the areas of the partial areas which are uncovered by the carrier due to convection.

In a preferred embodiment, at least two partial surfaces of each radiation-emitting semiconductor component are completely uncovered by the carrier. For example, the radiation-emitting semiconductor components may be prism-shaped, in particular cuboid. In this case, the semiconductor components may have six partial surfaces. In particular, the partial surfaces which are completely uncovered by the carrier are opposite surfaces.

In accordance with at least one embodiment, the radiation-emitting semiconductor components are arranged without contact, so that in each case a gap is located between two directly adjacent semiconductor components. In other words, the mutually facing partial surfaces of two adjacent semiconductor components do not adjoin one another directly. Convection may take place in the intermediate spaces, so that the heat loss arising during operation can be dissipated from the semiconductor components.

In accordance with at least one embodiment, in each case a radiation-permeable gaseous, liquid or solid medium is arranged in the intermediate space. While a cooling due to convection is possible by the gaseous or liquid medium, the cooling takes place in the solid medium in particular by heat conduction. In an advantageous embodiment, the gaseous medium to a noble gas or consists thereof. For example, the noble gas may be helium. Furthermore, the solid medium may be a plastic.

In accordance with at least one embodiment, the carrier comprises a carrier body. The carrier body may be formed of an electrically poor or non-conductive material. Here, the contact means are arranged for example in the form of metallizations on the carrier body. In particular, the carrier body is formed from a radiation-transmissive material, for example a radiation-transmissive plastic or glass. Alternatively, the carrier body may be formed from an electrically conductive material, for example a metal or a metal compound. In this case, regions of the carrier body form the contact means. Preferably, the contact means in the carrier are symmetrical, in particular mirror-symmetrical, arranged.

The carrier may be formed in one piece. Furthermore, the carrier may be formed in several pieces, so that it has at least two separate carrier elements. Preferably, the carrier or at least one carrier element in the form of a cylinder or prism. For example, the carrier or the carrier element in cross-section, that is to say in particular along a sectional plane whose surface normal is arranged parallel to the third axis, have a rectangular shape. Further, the carrier or the carrier element in cross section may resemble a star. Here, prongs of the star form cooling fins, which promote the convection on the carrier.

In accordance with at least one embodiment, the carrier has openings, in each of which a radiation-emitting semiconductor component is arranged. The shape of the carrier can be strip-like, wherein the openings are recessed or punched out areas in the carrier body of the carrier.

In accordance with at least one embodiment, the radiation-emitting semiconductor components are arranged consecutively exclusively along the third axis of the carrier. This means that the radiation-emitting semiconductor components have no adjacent semiconductor components in a first and second axial direction. In this case, the "first axial direction" is understood to mean a direction parallel to the first axis. Correspondingly, the "second axis direction" is to be understood as meaning a direction running parallel to the second axis, and the "third axis direction" being understood to mean a direction running parallel to the third axis.

In accordance with at least one embodiment, the radiation-emitting semiconductor components project beyond the carrier in the first or second axial direction. In other words, the semiconductor devices are beyond the carrier in the first or second axial direction. As a result, the semiconductor components can radiate freely into the room.

In accordance with at least one embodiment, the device has connection means, wherein in each case a connecting means between a connection element and a contact means is arranged. In particular, the connecting means are each at least one of the following means: bonding wire, adhesion promoter, solder joint. In particular, two semiconductor components arranged next to one another are electrically connected to the same contact means by means of a respective connection means. As a result, the semiconductor components can be connected in parallel or in series.

In accordance with at least one embodiment, the radiation-emitting semiconductor components each have a radiation body, which is formed from a radiation-transmissive material and arranged on partial surfaces of the semiconductor body. For example, the radiation body can contain or consist of glass or plastic.

In particular, the first and / or second dimensions of the semiconductor component are lengthened by means of the radiation body. The extension of the semiconductor device causes an enlargement of the radiating surface. For example, the first extension can be extended by the radiation body by a factor of 2 to 3. Accordingly, an increase in the emission area by a factor of 4 to 9 can be effected. In other words, the first and / or second dimensions of the semiconductor component may be 2 to 3 times greater than the first and / or second dimensions of the semiconductor body.

Furthermore, the radiation extraction from the semiconductor component can be improved by means of the radiation body. For example, the radiation body can have at least one outcoupling element which has a convex coupling-out surface. Furthermore, the radiation body can be formed from a refractive index-matched material. In particular, "refractive index-adjusted" means that a refractive index of the material is greater than the refractive index of a medium surrounding the radiation body, but smaller than a refractive index of the semiconductor body.

In a preferred embodiment, the semiconductor components each have a conversion element, so that the radiation emitted by the semiconductor body can be at least partially converted into radiation of a different wavelength. The conversion element can be arranged on the semiconductor body or the radiation body. Furthermore, the radiation body may contain conversion materials, so that the radiation body is at the same time a conversion element.

In accordance with at least one embodiment, the radiation-emitting semiconductor components each have a plurality of cooling ribs. The cooling fins are, in particular, prism-shaped radiation-transmissive elements which extend along at least one partial area of the semiconductor components or the semiconductor bodies. For example, the cooling fins may contain or consist of a plastic material. By means of the cooling fins, the convection-induced cooling of the semiconductor components can be improved. For example, the semiconductor components may each have an encapsulation in which the semiconductor body is embedded. The encapsulation may have on its surface a structure of elevations and inclusions, the elevations preferably forming cooling ribs of the semiconductor component.

Further advantages and advantageous embodiments and developments will become apparent from the following in connection with the 1 to 10 described embodiments.

Show it:

1 to 4 schematic perspective views of radiation emitting devices according to various embodiments,

5 and 6 schematic perspective views of radiation emitting modules according to various embodiments,

7 to 10 schematic perspective views or schematic plan views of radiation-emitting semiconductor devices according to various embodiments.

1 shows a first embodiment of a radiation-emitting device 1 , the plurality of radiation-emitting semiconductor devices 2 includes. The radiation-emitting semiconductor components 2 each have a surface that consists of several faces 2A . 2 B . 2C . 2D . 2E . 2F composed. Furthermore, the radiation emitting semiconductor devices 2 in each case a first connection element arranged on the surface 3 and second connection element 4 on. The radiation-emitting semiconductor components 2 can be found on a majority of their faces 2A . 2 B . 2C . 2D . 2E . 2F Emit radiation. In particular, on all faces 2A . 2 B . 2C . 2D . 2E . 2F each semiconductor device 2 Emitted radiation. Preferably, the radiation from each individual semiconductor device 2 delivered isotropically. This means that the emitted radiation has no preferred direction.

Preferably, a first extension B determinable along a first axial direction R1 is B the semiconductor devices 2 greater than a second extent T determinable along a second axial direction R2 extending perpendicular to the first, and a third extent H of the semiconductor components determinable along a third axial direction R3 running transversely to the first and second axial directions R1, R2 2 , In particular, the ratio between the first expansion B and the second expansion T is 10: 1, preferably 20: 1. The same relationship preferably also applies to the ratio between the first extension B and the third extension H. For example, the semiconductor components 2 a first extent B between 1 mm and 5 mm, in particular 2 mm.

The connection elements 3 . 4 extend parallel to each other along the first axial direction R1. In particular, it concerns with the connection elements 3 . 4 to strip-shaped metallizations on a semiconductor body 5 of the semiconductor device 2 are arranged. Here are the connection elements 3 . 4 with advantage mirror symmetry on a partial surface 5B of the semiconductor body 5 arranged. The power supply takes place here from the center of the semiconductor body 5 out to the outside to edge regions of the semiconductor body 5 ,

Furthermore, the radiation-emitting device comprises 1 a carrier 6 which has a three-dimensional prismatic shape, characterized by a first extent B determinable along a first axis A1, a second extent T determinable along a second axis A2, and a third extent H determinable along a third axis A3, the third extent H is greater than the first dimension B and the second dimension T. In a preferred embodiment, the third dimension H of the carrier 6 twice as large as the first extension B of the semiconductor devices 2 , For example, the third extent H of the carrier 6 between 2 mm and 10 mm, in particular 5 mm.

Furthermore, the carrier comprises 6 a first electrical contact means 7A and a second electrical contact means 7B , In this case, each connection element 3 . 4 with an electrical contact means 7A . 7B of the carrier 6 electrically connected (not shown). For example, the first contact means 7A with a first voltage pole and the second contact means 7B be connected to a second voltage pole. Furthermore, the first connection elements 3 each with the first contact means 7A and the second connection elements 4 each with the second contact means 7B be electrically connected. This allows the semiconductor devices 2 be connected in parallel to each other.

At the in 1 illustrated embodiment, the carrier 6 a carrier body 6A on. The carrier body 6A may be formed of an electrically poor or non-conductive material. Furthermore, the carrier body 6A formed with advantage of a radiation-transparent material. For example, the carrier body 6A be formed of a radiation-transparent plastic or glass. The contact means 7A . 7B are in the form of metallizations on the carrier body 6A arranged.

Furthermore, the carrier comprises 6 openings 8th in which in each case a radiation-emitting semiconductor component 2 is arranged. Preferably, the cross sections of the openings produced along a sectional plane R2-R3 are 8th and semiconductor devices 2 identical, so that the semiconductor devices 2 perfectly fitting in the openings 8th are arranged. The radiation-emitting semiconductor components 2 in particular through the openings 8th stuck and surmount the wearer 6 in the first direction R1.

The semiconductor devices 2 are by means of the vehicle 6 mechanically interconnected, wherein the radiation emitting semiconductor devices 2 exclusively along the third axial direction R3, ie in the direction in which the carrier 6 its longest extension H, are lined up one after the other.

The radiation-emitting semiconductor components 2 are arranged without contact, so that in each case between two directly adjacent semiconductor devices 2 a gap 9 located. At the in 1 illustrated embodiment is in the spaces 9 in each case a radiation-permeable gaseous medium (not shown) is arranged. The gaseous medium may be, for example, air or a noble gas such as helium.

Preferably, at most 50% of each partial area 2A . 2 B . 2C . 2D . 2E . 2F a single semiconductor device 2 from the carrier 6 covered. At the in 1 illustrated embodiment, the semiconductor devices 2 only in the area of the openings 8th from the carrier 6 covered. Because the first extension B of the carrier 6 is much smaller than the first extension B of the semiconductor devices 2 , only a small proportion of the faces 2A . 2 B . 2E . 2F from the carrier 6 covered. The two opposing faces 2C . 2D are from the carrier 6 completely uncovered.

At the in 1 illustrated device 1 can the gaseous medium between the semiconductor devices 2 circulate and thus the device 1 cool by convection. A additional heat sink is therefore not needed. Furthermore, the low degree of coverage allows the surface of the semiconductor devices 2 a virtually undisturbed radiation in all spatial directions, so that by means of the device 1 a comparatively high radiation yield can be achieved.

A possible variation of in 1 illustrated embodiment may be to form the carrier multi-piece (not shown). In this case, the carrier may have two carrier elements, which are in the manner of in 1 illustrated carrier 6 are formed.

2 shows a further embodiment of a radiation-emitting device 1 , In this case, the semiconductor components 2 according to the in 1 illustrated embodiment, an elongated shape, that is, the first extension B is greater than the second extension T and the third extension H. Further, the semiconductor devices 2 each a first and second connection element 3 . 4 on, with the connecting elements 3 . 4 according to the in 1 illustrated embodiment strip-shaped and are arranged parallel to each other.

Furthermore, the device comprises 1 a carrier 6 on which the semiconductor devices 2 are arranged. The carrier 6 is integrally formed and has the shape of an elongated prism with a rectangular base 6B resulting from the first extension B and the second extension T of the carrier 6 is determined. The semiconductor devices 2 are on a side surface 6C of the carrier 6 arranged, the transverse, in particular perpendicular, to the base 6B , is arranged. The semiconductor devices 2 are arranged side by side along the third axis, wherein the semiconductor components 2 the carrier 6 project in the first axial direction, that is, the semiconductor devices 2 are wider than the carrier 6 ,

The carrier 6 comprises a carrier body 6A and electrical contact means 7A . 7B on the carrier body 6A are arranged. For example, the electrical contact means 7A . 7B in the form of metallizations on the carrier body 6A be upset. In particular, there is in each case an electrical contact means 7A . 7B in a gap 9 between two immediately adjacent semiconductor devices 2 , Here are the semiconductor devices 2 with those partial surfaces 2A on the carrier 6 arranged, which the partial surfaces 2 B with connection elements 3 . 4 are opposite. An electrical connection between each one connection element 3 . 4 and a contact agent 7A . 7B is by means of a lanyard 10 produced. This may be, for example, a bonding wire. Preferably, in each case the first connection element 3 a semiconductor device 2 and the second connection element 4 an adjacent semiconductor device 2 with the same contact agent 7A . 7B connected. Here are the semiconductor devices 2 especially in series.

In this embodiment, the semiconductor devices 2 only on a partial surface 2A from the carrier 6 covered. This also indicates this device 1 a comparatively high radiation yield.

3 shows a further embodiment of a radiation-emitting device 1 , As with the in 2 illustrated embodiment is also the carrier 6 formed in one piece and has the shape of an elongated prism with a rectangular base 6B resulting from the first extension B and the second extension T of the carrier 6 is determined. The semiconductor devices 2 are on a side surface 6C of the carrier 6 attached, the transverse, in particular perpendicular, to the base 6B , is arranged. The semiconductor devices 2 are arranged side by side along the third axis, wherein the semiconductor components 2 the carrier 6 project in the first axial direction, that is, the semiconductor devices 2 are wider than the carrier 6 ,

The carrier 6 comprises a carrier body 6A and electrical contact means 7A . 7B on the carrier body 6A are arranged. For example, the electrical contact means 7A . 7B in the form of metallizations on the carrier body 6A be upset.

At the in 3 illustrated embodiment, the contact means 7A . 7B on that side surface 6C arranged on which the semiconductor components 2 are attached. Here are the semiconductor devices 2 with the faces 2 B , which the connecting elements 3 . 4 have, on the side surface 3 . 4 attached. In particular, each becomes a gap 9 between two immediately adjacent semiconductor devices 2 from an electrical contact means 7A . 7B covered. In other words, a third extension of the electrical contact means 7A . 7B each greater than a third extension of the respective gap 9 be so the gaps 9 in the third axial direction R3 each of a contact means 7A . 7B be overstretched. This may be a contact agent 7A . 7B each of the first connection element 3 a semiconductor device 2 to the second connection element 4 an adjacent semiconductor device 2 extend. This allows the semiconductor devices 2 be connected in series. The electrical connection between connection element 3 . 4 and contact agents 7A . 7B can be effected by means of a connection means (not shown) wherein as a connecting means, for example, a solder joint or an electrically conductive adhesion promoter in question.

Also in this embodiment, the semiconductor devices 2 only on a partial surface 2A from the carrier 6 covered. This also indicates this device 1 a comparatively high radiation yield.

4 shows an embodiment of a radiation-emitting device 1 , which additionally has a basic body 11 in which the carrier 6 and the radiation emitting semiconductor devices 2 are embedded. The main body 11 fills the gaps 9 out, leaving in the gaps 9 a solid medium is located.

In particular, the main body 11 permeable to radiation, so that of the semiconductor devices 2 emitted radiation is only slightly absorbed or reflected. For example, the main body 11 be formed from a plastic. The main body 11 gives the device 1 a cuboid shape. By means of the main body 11 may be the radiation emitting device 1 be mechanically stabilized so that their handling is facilitated. Preferably arranged at the edge contact means 7A . 7B only partially in the body 11 embedded, so that the device 1 to which from the main body 11 outstanding contact materials 7A . 7B electrically connected, that can be connected to a voltage source.

In 5 is a first embodiment of a radiation emitting module 12 shown, the multiple radiation emitting devices 1 having. Here are the devices 1 strung together so that their first, second and third axes are each arranged parallel to each other.

For example, the radiation emitting devices 1 according to the in 4 be formed embodiment illustrated. Here are the ones from the main body 11 protruding edge contact means 7A . 7B as an advantage. These allow an electrical interconnection, in particular a series connection, of adjacent devices 1 ,

6 shows a further embodiment of a radiation-emitting module 12 , the multiple radiation emitting devices 1 , for example, by type of in 4 illustrated device comprises. The module 12 has a center Z, in which the devices 1 meet. The devices 1 may be arranged such that their third axes are parallel to each other while their first axes are arranged at an angle greater than 0 ° and less than 180 °. In other words, the module 12 be designed rotationally symmetrical. Such an arrangement allows convection currents (see arrow) between the individual devices 1 , so that comparatively good cooling of the module 12 is possible.

7 shows an advantageous variant of a radiation-emitting semiconductor device 2 , In this case, the radiation-emitting semiconductor component has 2 several cooling fins 13 on. At the cooling fins 13 they are prism-shaped radiation-transmissive elements that extend along subareas 5A . 5B . 5E . 5F of the semiconductor body 5 extend. For example, the cooling fins 13 contain or consist of a plastic material. In particular, the semiconductor body 5 be embedded in an encapsulation with a structured surface, wherein elevations of the structured surface as cooling fins 13 can be designated. By means of cooling fins 13 can the convection caused by cooling (see arrow) of the semiconductor device 2 be improved. In the encapsulation may be included a conversion material, so that of the semiconductor body 5 emitted radiation can be at least partially converted into radiation of a different wavelength.

8th shows a further advantageous variant of a radiation-emitting semiconductor device 2 , The semiconductor device 2 has a radiation body 14 on, formed of a radiation-transparent material and on partial surfaces 5C . 5D of the semiconductor device 2 is arranged. The radiation body 14 extends the first and second dimensions of the semiconductor device 2 , whereby the radiating surface of the semiconductor device 2 is enlarged. Furthermore, by means of the radiation body 14 the radiation extraction from the semiconductor device 2 be improved. The radiation body 14 comprises two decoupling elements 14A . 14B , each having a convex decoupling surface. Furthermore, the radiation body 14 be formed of a refractive index-matched material. In particular, "refractive index-adjusted" means that a refractive index of the material is greater than the refractive index of a radiation body 14 surrounding medium, but smaller than a refractive index of the semiconductor body 5 ,

9 and 10 show further advantageous variants of a radiation-emitting semiconductor device 2 , In contrast to the preceding embodiments, in which the connection elements 3 . 4 strip-shaped, that is formed rectilinear, have the connection elements 3 . 4 curved areas. For example, the first connection element 3 semicircular. Also the second connection element 4 has a semi-circular area 4A and in addition a circular arc-shaped area 4B on, starting from the edge of the semiconductor body 5 to the semicircular area 4A followed. The centrally arranged connection elements 3 . 4 allow on the one hand a symmetrical current distribution, on the other hand a largely isotropic radiation at the partial surface 5B ,

At the in 10 illustrated embodiment, the connection elements 3 . 4 also curved areas. On the one hand, the connection elements 3 . 4 each semicircular areas 3A . 4A on. On the other hand, the connection elements 3 . 4 oval areas 3B . 4B on. This structure also makes possible, on the one hand, a symmetrical current distribution and, on the other hand, a largely isotropic emission at the partial surface 5B ,

The invention is not limited by the description with reference to the embodiments. Rather, the invention encompasses any novel feature as well as any combination of features, including in particular any combination of features in the claims, even if this feature or combination itself is not explicitly stated in the patent claims or exemplary embodiments.

LIST OF REFERENCE NUMBERS

1

Radiation emitting device

2

Radiation emitting semiconductor device

2A, 2B, 2C, 2D, 2E, 2F

 subarea

3

first connection element

3A, 3B

Subareas of the first connection element

4

second connection element

4A, 4B

Subregions of the second connection element

5

Semiconductor body

5A, 5B, 5C, 5D

subareas

6

 carrier

6A

 support body

6B

Floor space

6C

side surface

7A, 7B

electrical contact agent

8th

opening

9

gap

10

connecting means

11

 body

12

 Radiation emitting module

13

 cooling fin

14

 radiant body

A1

first axis

A2

second axis

A3

third axis

B

first expansion

T

second expansion

H

third expansion

R1

first axis direction

R2

second axis direction

R3

third axis direction

Z

center

Claims (16)

Radiation emitting device ( 1 ) comprising - a plurality of radiation emitting semiconductor devices ( 2 ), each having a surface made up of several faces ( 2A . 2 B . 2C . 2D . 2E . 2F ), and in each case one arranged on the surface of the first and second terminal element ( 3 . 4 ), wherein the radiation-emitting semiconductor components ( 2 ) at a plurality of their partial surfaces ( 2A . 2 B . 2C . 2D . 2E . 2F ) Emitting radiation, - a carrier ( 6 A three - dimensional shape, which can be determined by a first extension (B) determinable along a first axis (A1), a second extension (T) determinable along a second axis (A2) perpendicular to the first axis and through one along a direction perpendicular to the first (A1) and the second axis (A2) extending third axis (A3) determinable third extent (H) is characterized, wherein the third extent (H) is greater than the first (B) and the second extent (T), - at least one electrical contact means ( 7A . 7B ), each connecting element ( 3 . 4 ) with an electrical contact means ( 7A . 7B ) of the carrier ( 6 ) is electrically connected, and the semiconductor components ( 2 ) by means of the carrier ( 6 ) are mechanically interconnected, with at most 50 % of each face ( 2A . 2 B . 2C . 2D . 2E . 2F ) of a single semiconductor device ( 2 ) of the carrier ( 6 ) are covered. Radiation emitting device ( 1 ) according to the preceding claim, wherein at least two partial surfaces ( 2A . 2 B . 2C . 2D . 2E . 2F ,) of each radiation emitting semiconductor device ( 2 ) of the carrier ( 6 ) are completely uncovered. Radiation emitting device ( 1 ) according to one of the preceding claims, wherein the radiation-emitting semiconductor components ( 2 ) on all partial surfaces ( 2A . 2 B . 2C . 2D . 2E . 2F ) Emit radiation. Radiation emitting device ( 1 ) according to one of the preceding claims, wherein the radiation-emitting semiconductor components ( 2 ) are arranged without contact, so that in each case between two directly adjacent semiconductor components ( 2 ) a gap ( 9 ) is located. Radiation emitting device ( 1 ) according to the preceding claim, wherein in the intermediate space ( 9 ) in each case a radiation-permeable gaseous, liquid or solid medium is arranged. Radiation emitting device ( 1 ) according to the preceding claim, wherein the gaseous medium is a noble gas. Radiation emitting device ( 1 ) according to claim 5, wherein the solid medium is a plastic. Radiation emitting device ( 1 ) according to any one of the preceding claims, wherein the carrier ( 6 ) a carrier body ( 6A ) on which the contact means ( 7A . 7B ) are arranged in the form of metallizations. Radiation emitting device ( 1 ) according to the preceding claim, wherein the carrier body ( 6A ) is formed of a radiation-transparent material. Radiation emitting device ( 1 ) according to one of the preceding claims, wherein between connecting element ( 3 . 4 ) and contact means ( 7A . 7B ) each a connecting means ( 10 ) is arranged, wherein it is in the connection means ( 10 ) is at least one of the following: bonding wire, adhesion promoter, solder joint. Radiation emitting device ( 1 ) according to any one of the preceding claims, wherein the carrier ( 6 ) comprises at least one support element having the shape of a cylinder or prism. Radiation emitting device ( 1 ) according to one of the preceding claims, wherein the radiation-emitting semiconductor components ( 2 ) exclusively along the third axis (A3) of the carrier ( 6 ) are consecutively lined up. Radiation emitting device ( 1 ) according to one of the preceding claims, wherein the radiation-emitting semiconductor components ( 2 ) the carrier ( 6 ) project in a first or second axial direction (R1, R2). Radiation emitting device ( 1 ) according to any one of the preceding claims, wherein the carrier ( 6 ) Openings ( 8th ), in which in each case a radiation-emitting semiconductor component ( 2 ) is arranged. Radiation emitting device ( 1 ) according to one of the preceding claims, wherein the radiation-emitting semiconductor components ( 2 ) each have a semiconductor body ( 5 ) and a radiation body ( 14 ) formed of a radiation-transmissive material and on partial surfaces ( 2A . 2 B . 2C . 2D . 2E . 2F ,) of the semiconductor body ( 5 ) is arranged. Radiation emitting device ( 1 ) according to one of the preceding claims, wherein the radiation-emitting semiconductor components ( 2 ) each have a plurality of cooling fins ( 13 ) exhibit.

Images