CN101859829A - Structure of light-emitting diode having multidirectional light scattering and manufacturing method thereof - Google Patents
Structure of light-emitting diode having multidirectional light scattering and manufacturing method thereof Download PDFInfo
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- CN101859829A CN101859829A CN200910131527A CN200910131527A CN101859829A CN 101859829 A CN101859829 A CN 101859829A CN 200910131527 A CN200910131527 A CN 200910131527A CN 200910131527 A CN200910131527 A CN 200910131527A CN 101859829 A CN101859829 A CN 101859829A
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Abstract
The invention discloses a structure of a light-emitting diode having multidirectional light scattering and a manufacturing method thereof. A metallic oxide is arranged above a second semiconductor layer, wherein the metallic oxide is irregularly arranged, the metallic oxide is removed through etching and a part of the second semiconductor layer, an illuminating layer or a first semiconductor layer is removed in order to form a scattering layer. A transparent conductive layer is arranged above the second semiconductor layer, a second electrode is arranged on the transparent conductive layer and a first electrode is arranged on the scattering layer, so the lighting effect of the light-emitting diode is changed into multidirectional light scattering.
Description
Technical field
The present invention relates to a kind of light emitting diode construction and manufacture method thereof, particularly relate to a kind of light emitting diode construction and manufacture method thereof with multidirectional light scattering.
Background technology
At present, III-V group-III nitride light-emitting diode series is since nineteen ninety-five delivers, fine ratio of product and benefit are along with technology is in recent years constantly improved, yet though the light direction of light-emitting diode does not carry out from all directions for having, its light direction also is the non-multidirectional that is.
Number No. 546452 as the TW patent announcement, patent name: its a kind of lighting device that is disclosed of lighting device that uses light-emitting diode, it is characterized by: in a plurality of LED wafer of the mounted on surface of spherical insulator, aforementioned LED wafer is connected in series, conductor portion is provided with lead-in wire in two ends, to cover the some of aforementioned LED wafer and aforementioned lead-in wire, and form spherical transparent or semitransparent resinite, in aforementioned transparent one-tenth semi-transparent resin body, sneak into the light-scattering material of powder such as Al, Au, W, Ti, Mo or wire.In the semi-transparent resin body of encapsulation, add light-scattering material.
See also Fig. 1, it improves the light-emitting diode structure schematic diagram of luminous efficiency for known technology; As shown in the figure, TW letters patent number No. 229949, patent name: light-emitting diode processing procedure and products thereof a kind of light-emitting diode that it disclosed, it comprises a substrate 11, n type semiconductor layer 12, luminescent layer 13, p type semiconductor layer 14, transparency conducting layer 15, N type electrode 16 and P type electrode 17, have a plurality of from a shrinkage pool that is recessed to form to described epitaxial layer cell orientation in contrast to the surface of described epitaxial layer unit in described transparency conducting layer 15, described many shrinkage pools make when light by the time produce scattering, and make described light-emitting diode luminance lifting.
Moreover, seeing also Fig. 2, it improves the light-emitting diode structure schematic diagram of luminous efficiency for known technology; As shown in the figure, it discloses a kind of light emitting diode construction described light emitting diode construction and manufacture method thereof, comprises a substrate 11 at least; One mixed layer 18 is formed on the described substrate 11, and described mixed layer 18 has the light that a roughened layer is injected in order to diffusion at least; One n type semiconductor layer 12 is formed on the described mixed layer 18; One luminescent layer 13 is formed on the described n type semiconductor layer 12; One p type semiconductor layer 14 is formed on the described luminescent layer 13.The light that the described mixed layer 18 of mat is injected with diffusion.
The light extraction efficiency of the single direction of light-emitting diode as can be known from the above mentioned is the great problem that solves of needing in fact.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of light-emitting diode structure with multidirectional light scattering, becomes multi-direction scattering with the bright dipping with a luminescent layer.
For solving the problems of the technologies described above, technical scheme of the present invention comprises: a substrate; One first semiconductor layer, it is arranged on the described substrate; One luminescent layer, it is arranged on described first semiconductor layer; One second semiconductor layer, it is arranged on the described luminescent layer; One transparency conducting layer, its part are arranged on described second semiconductor layer; One scattering layer, it is arranged on described first semiconductor layer, and described scattering layer has scattering surface; One first electrode, it is arranged on the described scattering layer; One second electrode, its part are arranged on described second semiconductor layer and the part transparency conducting layer.
Beneficial effect of the present invention is: with the scattering that luminous effect becomes multidirectional that goes out of light-emitting diode, can improve the light extraction efficiency of light-emitting diode.
Manufacturing method for LED with multidirectional light scattering of the present invention comprises: form a substrate; Form one first semiconductor layer on described substrate; Form a luminescent layer on described semiconductor layer; Form one second semiconductor layer on described luminescent layer; Form a metal oxide layer on described second semiconductor layer, and described metal oxide layer becomes irregular setting; Carry out etching, with described metal oxide layer etching, and on described first semiconductor layer of part, form a scattering layer; Form a transparency conducting layer, it partly is covered on described second semiconductor layer; Form one first electrode on described scattering layer; Form one second electrode on described second semiconductor layer of part and described transparency conducting layer.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is the light-emitting diode structure schematic diagram that known technology improves luminous efficiency;
Fig. 2 is the light-emitting diode structure schematic diagram that known technology improves luminous efficiency;
Fig. 3 A to Fig. 3 D is the structural representation of the manufacturing process of the embodiment of the invention;
Fig. 4 is the structure for amplifying schematic diagram of the scattering layer of the embodiment of the invention;
Fig. 5 A to Fig. 5 B is the structural representation of the manufacturing process of the embodiment of the invention.
Description of reference numerals among the figure:
11 ' is substrate, and 12 ' is n type semiconductor layer, and 13 ' is luminescent layer,
14 ' is p type semiconductor layer, and 15 ' is transparency conducting layer, and 16 ' is N type electrode,
17 ' is P type electrode, and 18 ' is mixed layer, and 10 is substrate,
11 is first semiconductor layer, and 12 is luminescent layer, and 13 is second semiconductor layer,
14 is metal oxide layer, and 15 is scattering layer, and 16 is transparency conducting layer,
17 is first electrode, and 18 is second electrode, and 20 is refracting layer,
L1, L2, L3 are the degree of depth.
Embodiment
The light-emitting diode of known technology is for solving the luminous effect that of single direction, and it is to be disclosed in the interior doping scattering material of packaging body or a light-mixed layer is set on substrate, and the present invention is provided with a scattering layer on one first semiconductor layer, to reach above-mentioned purpose.
See also Fig. 3 A to Fig. 3 D, it is the structural representation of the manufacturing process of a preferred embodiment of the present invention; As shown in the figure, the present invention is disclosed in to form one first semiconductor layer 11 on the substrate 10, on described first semiconductor layer 11, form a luminescent layer 12, on described luminescent layer 12, form one second semiconductor layer 13, be to form on described second semiconductor layer 13 metal oxide layer 14, the described metal oxide layer 14 of present embodiment is the example explanation with titanium dioxide (TiO2), titanium dioxide is into irregular being arranged on described second semiconductor layer 14, utilize inductive coupling type electric paste etching machine (ICP Etcher) to carry out etching this moment, because TiO2 irregular produces the effect (seeing also shown in Fig. 3 B) of etching degree varies when being arranged at etching, to form a scattering layer 15 on described first semiconductor layer 11 of part, again in partly forming a transparency conducting layer 16 on described second semiconductor layer 13, be the described transparency conducting layer 16 of part and partly form one second electrode 18 on described second semiconductor layer 13, and on described scattering layer 15, form one first electrode 17.
Wherein, described substrate 10 can be insulated substrate or is a sapphire substrate, carborundum (SiC) substrate, silicon (Si) substrate, GaAs (GaAs) substrate, lithium metaaluminate (LiAlO2) substrate, lithium gallium oxide (LiGaO2) substrate or aluminium nitride (AlN) substrate.
See also Fig. 4, it is the structure for amplifying schematic diagram of the scattering layer of a preferred embodiment of the present invention; As shown in the figure, disclosed scattering layer 15 causes the etching degree varies because the irregular setting of titanium dioxide is established, so described scattering layer 15 can be L1 or L2 or L3 or its structure that is arbitrarily made with, the control of its structure is the distribution and the etched time of titanium dioxide, so can be the material of L1, described scattering layer 15 is described first semiconductor layer merely, also can be L1 and add that L2 is expressed as the material of described first semiconductor layer and luminescent layer, also can be L1 and add that L2 adds the material that L3 is expressed as described first semiconductor layer and the luminescent layer and second semiconductor layer.
In addition, see also Fig. 5 A to Fig. 5 B, it is the structural representation of the manufacturing process of another preferred embodiment of the present invention; As shown in the figure, the present invention can be after scattering layer 15 be finished, the irregular refracting layer 20 that is provided with on described second semiconductor layer, the material of described refracting layer 20 is to be a metal oxide, present embodiment is done an explanation with titanium dioxide, to increase irregular dispersion effect, be on the described refracting layer 20 of part a transparency conducting layer 16 to be set, and on partly described refracting layer 20 and the described transparency conducting layer 16 of part, one second electrode 18 be set.
In sum, the present invention utilizes etching technique to form a scattering layer with the luminescent effect with the single direction of light-emitting diode on first semiconductor layer, becomes the scattering behavior of multidirectional.
More than, the present invention is had been described in detail, but these are not to be construed as limiting the invention by embodiment.Under the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (17)
1. the light-emitting diode structure with multidirectional light scattering is characterized in that, comprising:
One substrate;
One first semiconductor layer, it is arranged on the described substrate;
One luminescent layer, it is arranged on described first semiconductor layer;
One second semiconductor layer, it is arranged on the described luminescent layer;
One transparency conducting layer, its part are arranged on described second semiconductor layer;
One scattering layer, it is arranged on described first semiconductor layer, and described scattering layer has scattering surface;
One first electrode, it is arranged on the described scattering layer;
One second electrode, its part are arranged on described second semiconductor layer and the part transparency conducting layer.
2. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described substrate is an insulated substrate.
3. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1, it is characterized in that described substrate is a sapphire substrate, silicon carbide substrate, silicon substrate, GaAs substrate, lithium metaaluminate substrate, lithium gallium oxide substrate or aluminium nitride substrate.
4. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described scattering layer from bottom to top comprises one first semiconductor layer, a luminescent layer and one second semiconductor layer.
5. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described scattering layer from bottom to top comprises one first semiconductor layer and a luminescent layer.
6. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described scattering layer is one first semiconductor layer.
7. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, comprises a refracting layer between described second semiconductor layer and the described transparency conducting layer.
8. the light-emitting diode structure with multidirectional light scattering as claimed in claim 7 is characterized in that, described refracting layer is a metal oxide layer.
9. the light-emitting diode structure with multidirectional light scattering as claimed in claim 8 is characterized in that, described metal oxide layer is a titanium dioxide.
10. the light-emitting diode structure with multidirectional light scattering as claimed in claim 8 is characterized in that described metal oxide layer becomes irregular setting in the surface of described second semiconductor layer.
11. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, the material of described transparency conducting layer is a tin indium oxide.
12. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described first semiconductor layer is a n type gallium nitride semiconductor layer.
13. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described second semiconductor layer is a p type gallium nitride semiconductor layers.
14. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described scattering layer is a column structure.
15. the light-emitting diode structure with multidirectional light scattering as claimed in claim 1 is characterized in that, described scattering layer is an acicular texture.
16. the manufacturing method for LED with multidirectional light scattering is characterized in that, comprises:
Form a substrate;
Form one first semiconductor layer on described substrate;
Form a luminescent layer on described semiconductor layer;
Form one second semiconductor layer on described luminescent layer;
Form a metal oxide layer on described second semiconductor layer, and described metal oxide layer becomes irregular setting;
Carry out etching, with described metal oxide layer etching, and on described first semiconductor layer of part, form a scattering layer;
Form a transparency conducting layer, it partly is covered on described second semiconductor layer;
Form one first electrode on described scattering layer;
Form one second electrode on described second semiconductor layer of part and described transparency conducting layer.
17. the manufacturing method for LED with multidirectional light scattering as claimed in claim 16, after etched step, a nearlyer step comprises step:
Form a refracting layer on described second semiconductor layer, and become irregular setting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910131527A CN101859829A (en) | 2009-04-07 | 2009-04-07 | Structure of light-emitting diode having multidirectional light scattering and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910131527A CN101859829A (en) | 2009-04-07 | 2009-04-07 | Structure of light-emitting diode having multidirectional light scattering and manufacturing method thereof |
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| CN101859829A true CN101859829A (en) | 2010-10-13 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103453357A (en) * | 2012-05-29 | 2013-12-18 | 璨圆光电股份有限公司 | Light emitting assembly |
| CN112233561A (en) * | 2016-03-17 | 2021-01-15 | 株式会社日本显示器 | Display device |
| CN112289903A (en) * | 2020-07-30 | 2021-01-29 | 华灿光电（浙江）有限公司 | Light emitting diode chip and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983650A (en) * | 2005-12-12 | 2007-06-20 | 璨圆光电股份有限公司 | LED structure with multi-directioanl light scattering and its production |
-
2009
- 2009-04-07 CN CN200910131527A patent/CN101859829A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1983650A (en) * | 2005-12-12 | 2007-06-20 | 璨圆光电股份有限公司 | LED structure with multi-directioanl light scattering and its production |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103453357A (en) * | 2012-05-29 | 2013-12-18 | 璨圆光电股份有限公司 | Light emitting assembly |
| CN103453357B (en) * | 2012-05-29 | 2017-04-12 | 晶元光电股份有限公司 | Light emitting assembly |
| CN112233561A (en) * | 2016-03-17 | 2021-01-15 | 株式会社日本显示器 | Display device |
| CN112233561B (en) * | 2016-03-17 | 2022-12-27 | 株式会社日本显示器 | Display device |
| CN112289903A (en) * | 2020-07-30 | 2021-01-29 | 华灿光电（浙江）有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN112289903B (en) * | 2020-07-30 | 2021-08-06 | 华灿光电（浙江）有限公司 | Light emitting diode chip and manufacturing method thereof |
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